Phase shifter, integrated transmit-receive channel and phased array system

Abstract

The embodiment of the invention provides a phase shifter, an integrated transceiving channel and a phased array system. The phase shifter comprises a first phase shifting unit, a second phase shifting unit, a third phase shifting unit, a fourth phase shifting unit, a fifth phase shifting unit and a sixth phase shifting unit, wherein the first phase shifting unit, the third phase shifting unit, the fourth phase shifting unit and the sixth phase shifting unit adopt a low-pass and band-pass switching type phase shifter structure; the second phase shifting unit and the fifth phase shifting unit adopt a high-pass and low-pass switching type phase shifter structure; and the phase shifter is used for performing phase shifting on the received signal when the configured signal receiving and transmitting device is used for receiving the signal, and performing phase shifting on the transmitted signal when the signal receiving and transmitting device is used for transmitting the signal. The phase shifter can realize a relatively large phase shifting range and has a relatively wide working frequency band, so that the phase shifter can be multiplexed when phase shifting is carried out on a receiving signal and a transmitting signal, and the overall layout area of a transceiving chip can be saved.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, and in particular to a phase shifter, an integrated transceiver channel and a phased array system. Background Art

[0002] The phase shifter is an indispensable circuit module in the multi-beam phased array front-end chip and the basis of the multi-beam phased array system. In the phased array system, the phase shifter can change the signal phase and compensate for the signal phase error, thereby increasing the transmission signal and the reception signal.

[0003] Phase shifters are required in both the transmitting channel and the receiving channel of the phased array system. To ensure the adaptability of the phased array system, the traditional approach is to integrate a phase shifter in each of the transmitting channel and the receiving channel, that is, to adopt an independent transceiver channel design. The receiving channel and the transmitting channel are completely independent in the physical layout.

[0004] The main disadvantage of this phased array system is that the transmitting and receiving channels have independent phase shifter circuits, and the phase shifter circuits often occupy a considerable area of ​​the receiving channel and the transmitting channel, so the area of ​​the entire transceiver chip will be greatly increased. Summary of the invention

[0005] The purpose of the embodiments of the present invention is to provide a phase shifter, an integrated transceiver channel and a phased array system, which can improve the phase shift range and operating frequency band of the phase shifter, so that the phase shifter can be reused when performing phase shifting on the received signal and the transmitted signal, thereby saving the overall layout area of ​​the transceiver chip. The specific technical solution is as follows:

[0006] In a first aspect, an embodiment of the present invention provides a phase shifter, including: a first phase shift unit, a second phase shift unit, a third phase shift unit, a fourth phase shift unit, a fifth phase shift unit and a sixth phase shift unit;

[0007] Wherein, the first phase shift unit, the third phase shift unit, the fourth phase shift unit and the sixth phase shift unit adopt a low-pass, band-pass switching phase shifter structure; the second phase shift unit and the fifth phase shift unit adopt a high-pass, low-pass switching phase shifter structure;

[0008] The phase shifter is used to shift the phase of a received signal when the signal transceiver device configured with the phase shifter is used to receive a signal, and to shift the phase of a transmitted signal when the signal transceiver device is used to transmit a signal.

[0009] Optionally, the first phase shift unit / the fourth phase shift unit includes: a first inductor (L1), a second inductor (L2), a first capacitor (C1), a second capacitor (C2), a first transistor (M1) and a second transistor (M2); a source of the first transistor (M1) is connected to a first end of the first inductor (L1) and a first end of the first capacitor (C1);

[0010] The drain of the first transistor (M1) is connected to the second end of the first inductor (L1) and the first end of the second capacitor (C2);

[0011] The drain of the second transistor (M2) is connected to the second end of the first capacitor (C1), the second end of the second capacitor (C2) and the first end of the second inductor (L2);

[0012] The source of the second transistor (M2) is connected to the second end of the second inductor (L2) and is grounded;

[0013] An input end of the first phase shift unit / the fourth phase shift unit is connected to the source of the first transistor (M1), the first end of the first inductor (L1) and the first end of the first capacitor (C1), and an output end of the first phase shift unit / the fourth phase shift unit is connected to the drain of the first transistor (M1), the second end of the first inductor (L1) and the first end of the second capacitor (C2);

[0014] The gate of the first transistor (M1) is connected to a first control voltage V1, and the gate of the second transistor (M2) is connected to a second control voltage

[0015] Optionally, the third phase shift unit / the sixth phase shift unit includes: a third inductor (L3), a fourth inductor (L4), a fifth inductor (L5), a third transistor (M3), a fourth transistor (M4) and a fifth transistor (M5);

[0016] The source of the third transistor (M3) is connected to the first end of the third inductor (L3);

[0017] The drain of the third transistor (M3) is connected to the first end of the fourth inductor (L4);

[0018] The drain of the fourth transistor (M4) is connected to the second end of the third inductor (L3) and the second end of the fourth inductor (L4);

[0019] The drain of the fifth transistor (M5) is connected to the source of the fourth transistor (M4) and the first end of the fifth inductor (L5);

[0020] The source of the fifth transistor (M5) is connected to the second end of the fifth inductor (L5) and is grounded;

[0021] The input end of the third phase shift unit / the sixth phase shift unit is connected to the source of the third transistor (M3) and the first end of the third inductor (L3), and the output end of the third phase shift unit / the sixth phase shift unit is connected to the drain of the third transistor (M3) and the first end of the fourth inductor (L4);

[0022] The gates of the third transistor (M3) and the fourth transistor (M4) are connected to a third control voltage V2, and the gate of the fifth transistor (M5) is connected to a fourth control voltage V3.

[0023] Optionally, the second phase shifting unit / the fifth phase shifting unit includes: a high-pass filter branch and a low-pass filter branch, and the high-pass filter branch and the high-pass filter branch are connected in parallel.

[0024] Optionally, the second phase shift unit / the fifth phase shift unit includes a sixth inductor (L6), a seventh inductor (L7), an eighth inductor (L8), a third capacitor (C3), a fourth capacitor (C4), a fifth capacitor (C5), a sixth transistor (M6), a seventh transistor (M7), an eighth transistor (M8) and a ninth transistor (M9);

[0025] The source of the sixth transistor (M6) is connected to the source of the ninth transistor (M9);

[0026] The drain of the sixth transistor (M6) is connected to the first end of the third capacitor (C3);

[0027] The source of the seventh transistor (M7) is connected to the first end of the fourth capacitor (C4);

[0028] A first end of the sixth inductor (L6) is connected to a second end of the third capacitor (C3) and a second end of the fourth capacitor (C4), and a second end of the sixth inductor (L6) is grounded;

[0029] The drain of the eighth transistor (M8) is connected to the drain of the seventh transistor (M7);

[0030] The source of the eighth transistor (M8) is connected to the first end of the seventh inductor (L7);

[0031] The drain of the ninth transistor (M9) is connected to the first end of the eighth inductor (L8);

[0032] A first end of the fifth capacitor (C5) is connected to a second end of the seventh inductor (L7) and a second end of the eighth inductor (L8), and a second end of the fifth capacitor (C5) is grounded;

[0033] The input end of the second phase shift unit / the fifth phase shift unit is connected to the source of the sixth transistor (M6) and the source of the ninth transistor (M9), and the output end of the second phase shift unit / the fifth phase shift unit is connected to the drain of the seventh transistor (M7) and the drain of the eighth transistor (M8);

[0034] The gates of the sixth transistor (M6) and the seventh transistor (M7) are connected to a fifth control voltage V3, and the gates of the eighth transistor (M8) and the ninth transistor (M9) are connected to a sixth control voltage V4.

[0035] Optionally, the first phase shift unit is used to achieve a 5.625° phase shift, the second phase shift unit is used to achieve a 90° phase shift, the third phase shift unit is used to achieve a 45° phase shift, the fourth phase shift unit is used to achieve an 11.25° phase shift, the fifth phase shift unit is used to achieve a 180° phase shift, and the sixth phase shift unit is used to achieve a 22.5° phase shift.

[0036] Optionally, the first phase shift unit, the second phase shift unit, the third phase shift unit, the fourth phase shift unit, the fifth phase shift unit and the sixth phase shift unit are cascaded in sequence.

[0037] Optionally, the operating frequency band of the phase shifter covers the Ku band and the Ka band, and the phase shift range of the phase shifter in the Ku band and the Ka band is 0°-360°.

[0038] In a second aspect, an embodiment of the present invention provides an integrated transceiver channel, including: a signal transmission link, a signal reception link, a transceiver conversion switch, and any of the above phase shifters;

[0039] The transmit / receive conversion switch is configured to connect the phase shifter to the signal transmission link when transmitting a signal, and to connect the phase shifter to the signal reception link when receiving a signal;

[0040] The phase shifter is configured to perform phase shift on the signal in the signal transmission link when transmitting a signal, and to perform phase shift on the signal in the signal reception link when receiving a signal.

[0041] In a third aspect, an embodiment of the present invention provides a phased array system, comprising one or more of the above-mentioned integrated transceiver channels.

[0042] Beneficial effects of the embodiments of the present invention:

[0043] The phase shifter provided in an embodiment of the present invention comprises a first phase shift unit, a second phase shift unit, a third phase shift unit, a fourth phase shift unit, a fifth phase shift unit and a sixth phase shift unit; wherein the first phase shift unit, the third phase shift unit, the fourth phase shift unit and the sixth phase shift unit adopt a low-pass, band-pass switching phase shifter structure; the second phase shift unit and the fifth phase shift unit adopt a high-pass, low-pass switching phase shifter structure; the phase shifter is used to phase shift a received signal when a signal transceiver device configured with the phase shifter is used to receive a signal, and to phase shift a transmitted signal when the signal transceiver device is used to transmit a signal.

[0044] The structural design of the phase shifter provided in the embodiment of the present invention has high flexibility, and each phase shift unit therein can be controlled individually. By reasonably adjusting the working state of each phase shift unit, a larger phase shift range can be achieved, the phase shift accuracy can be improved, and lower power consumption can be achieved.

[0045] In addition, the phase shifter specifically combines a phase shift unit adopting a low-pass, band-pass switching phase shifter structure and a phase shift unit adopting a high-pass, low-pass switching phase shifter structure. Therefore, on the basis of ensuring the working freedom of the phase shifter, the phase shifter can have the advantages of a wide working frequency band and good linearity.

[0046] When the phase shifter provided in the embodiment of the present invention is applied to a transceiver device, it can be adapted to different phase shifting requirements because it can achieve a large phase shifting range and has a wide operating frequency band. Thus, the phase shifter can be reused when performing phase shifting on the received signal and the transmitted signal, thereby saving the overall layout area of ​​the transceiver chip.

[0047] Of course, it is not necessary to achieve all of the advantages described above at the same time to implement any product or method of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0049] Figure 1 is a schematic structural diagram of a phase shifter provided by an embodiment of the present invention;

[0050] Figure 2 is a schematic diagram of the circuit structure of a first phase shifting unit and a fourth phase shifting unit provided in an embodiment of the present invention;

[0051] Figure 3 is a schematic diagram of the circuit structure of the third phase shifting unit and the sixth phase shifting unit provided in an embodiment of the present invention;

[0052] Figure 4 is a schematic diagram of the circuit structure of the second phase shifting unit and the fifth phase shifting unit provided in an embodiment of the present invention;

[0053] Figure 5 is a schematic diagram of the circuit structure of a phase shifter provided by an embodiment of the present invention;

[0054] Figure 6 4 is a diagram of phase shift test results of the phase shifter provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0055] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field based on this application belong to the scope of protection of the present invention.

[0056] For ease of understanding, a phase shifter involved in one or more embodiments of the present invention is first briefly described.

[0057] A phase shifter is a device used to adjust the phase of a signal. It is an indispensable circuit module in a multi-beam phased array front-end chip and the basis of a multi-beam phased array system. A phased array system is generally composed of multiple transceiver channels and antenna arrays. These channels and arrays are placed according to certain physical laws, and the laws of the arrays can be changed as needed. The advantages of a phased array system lie in its beamforming and fast beam scanning capabilities. Beamforming, also known as beamforming or spatial filtering, is a technology that controls the direction of a signal. When receiving or transmitting a signal, the signal in a certain direction is enhanced or weakened by changing the phase information in the channel. In a phased array system, a phase shifter can change the phase, compensate for phase errors, and control the direction of the signal, thereby increasing the transmit and receive signals.

[0058] Phase shifters are required in both the transmit channel and the receive channel. The traditional approach is to integrate a phase shifter in each of the transmit and receive channels, that is, to adopt an independent transmit and receive channel design. The receive channel consists of a switch circuit, a limiter circuit, a low-noise amplifier circuit, a gain amplifier module circuit, a phase shifter circuit, and a variable gain amplifier circuit module; the transmit channel consists of a phase shifter circuit, a pre-driver amplifier circuit, a power amplifier circuit module, and a switch. The switching between receiving and transmitting is achieved by controlling the switch. The receive channel and the transmit channel are completely independent in the physical layout, and their transmit and receive functions do not affect each other. The receive and transmit branches can be individually optimized in terms of performance, so that both the receive channel and the transmit channel can have good linearity and a large gain dynamic range.

[0059] The main disadvantage of this phased array system is that the transmitting and receiving channels have independent phase shifter circuits, which often occupy a considerable area of ​​the receiving channel and the transmitting channel. This greatly increases the area of ​​the entire transceiver chip, which is not conducive to large-scale multi-channel integration.

[0060] In order to solve the above problems, an embodiment of the present invention provides a phase shifter. Figure 1 , the phase shifter provided in the embodiment of the present invention specifically includes:

[0061] a first phase shifting unit, a second phase shifting unit, a third phase shifting unit, a fourth phase shifting unit, a fifth phase shifting unit and a sixth phase shifting unit.

[0062] in, Figure 1 V in It can be understood as the signal input to the phase shifter, V out Furthermore, each of the above phase shifting units can achieve a specific amplitude of phase shifting on the signal input into the phase shifter, and the specific phase shift amount achieved by each phase shifting unit can be selected based on actual needs, which is not limited in the embodiments of the present invention.

[0063] In addition, the phase shift state of any phase shift unit in the phase shifter can be switched individually, that is, each phase shift unit can be independently controlled to shift the phase of the signal or not, and the phase shift amount generated by the phase shifter can be obtained by summing the phase shift amounts generated by each phase shift unit.

[0064] As an example, each phase shift unit may have a built-in switch, and the transmission path of the signal in the phase shift unit is controlled by controlling the switch state, so that the working state of the phase shift unit, that is, whether to phase shift the signal, can be switched. The specific structure of each phase shift unit can be selected according to actual needs, and the embodiment of the present invention is not limited to this.

[0065] In the embodiment of the present invention, the first phase shift unit, the third phase shift unit, the fourth phase shift unit and the sixth phase shift unit adopt a low-pass, band-pass switching phase shifter structure; the second phase shift unit and the fifth phase shift unit adopt a high-pass, low-pass switching phase shifter structure.

[0066] Specifically, the low-pass and band-pass switching phase shifter structure can achieve a wider range of phase shift selection and has a higher degree of design freedom, while the high-pass and low-pass switching phase shifter structure has a flat phase shift and a higher operating bandwidth. Therefore, by combining the low-pass and band-pass switching phase shifter structure and the high-pass and low-pass switching phase shifter structure in the phase shifter, it is possible to ensure that the phase shifter has a wide operating frequency band and good linearity while achieving a higher degree of working freedom.

[0067] As an example, in order to ensure the working performance of the phase shifter, since the low-pass and band-pass switching phase shifter structures have simple circuit structures and require a small circuit area when used to achieve phase shifting within a smaller range, they can be used to achieve a smaller phase shift, such as 45°. For a larger phase shift, compared with the low-pass and band-pass switching phase shifter structures, the high-pass and low-pass switching phase shifter structures require fewer inductors and a smaller circuit area, so the high-pass and low-pass switching phase shifter structures can be used to achieve a larger phase shift, such as 180°.

[0068] In the embodiment of the present invention, the phase shifter is used to perform phase shift on a received signal when the signal transceiver device configured with the phase shifter is used to receive a signal, and to perform phase shift on a transmitted signal when the signal transceiver device is used to transmit a signal.

[0069] As mentioned above, due to the difference in phase shifting requirements, the existing phased array system will specifically configure phase shifters in the signal transceiver channel, resulting in a significant increase in the area of ​​the transceiver chip. The phase shifter provided in the present application specifically realizes the phase shift of the signal through six phase shifting units, thereby being able to achieve a larger phase shifting range and ensure phase shifting accuracy. In addition, the phase shifter specifically combines a phase shifting unit with a low-pass, band-pass switching phase shifter structure and a phase shifting unit with a high-pass, low-pass switching phase shifter structure, so it can also achieve a wider operating frequency band, thereby being able to meet diverse phase shifting requirements.

[0070] Therefore, when the phase shifter provided in the embodiment of the present invention is applied to a signal transceiver device, such as a transceiver chip in a phased array system, the phase shifter can be multiplexed in a signal receiving channel and a signal transmitting channel. That is, when the signal transceiver device is specifically used to receive a signal, the phase shifter can be connected to the signal receiving channel so that the phase shifter can shift the phase of the received signal in the signal receiving channel; when the signal transceiver device is specifically used to transmit a signal, the phase shifter can be connected to the signal transmitting channel so that the phase shifter can shift the phase of the transmitted signal in the signal transmitting channel.

[0071] The structural design of the phase shifter provided in the embodiment of the present invention has high flexibility, and each phase shift unit therein can be controlled individually. By reasonably adjusting the working state of each phase shift unit, a larger phase shift range can be achieved, the phase shift accuracy can be improved, and lower power consumption can be achieved.

[0072] In addition, the phase shifter specifically combines a phase shift unit adopting a low-pass, band-pass switching phase shifter structure and a phase shift unit adopting a high-pass, low-pass switching phase shifter structure. Therefore, on the basis of ensuring the working freedom of the phase shifter, the phase shifter can have the advantages of a wide working frequency band and good linearity.

[0073] When the phase shifter provided in the embodiment of the present invention is applied to a transceiver device, it can be adapted to different phase shifting requirements because it can achieve a large phase shifting range and has a wide operating frequency band. Thus, the phase shifter can be reused when performing phase shifting on the received signal and the transmitted signal, thereby saving the overall layout area of ​​the transceiver chip.

[0074] In one embodiment of the present invention, the first phase shift unit is used to achieve a 5.625° phase shift, the second phase shift unit is used to achieve a 90° phase shift, the third phase shift unit is used to achieve a 45° phase shift, the fourth phase shift unit is used to achieve a 11.25° phase shift, the fifth phase shift unit is used to achieve a 180° phase shift, and the sixth phase shift unit is used to achieve a 22.5° phase shift.

[0075] The phase shifter provided in the embodiment of the present invention can specifically achieve 64 phase changes of the output signal within the range of 0°-360° with a step value of 5.625°.

[0076] Specifically, the phase shifting unit in the phase shifter provided in the embodiment of the present invention can be divided into small phase shifting unit: 5.625° phase shifting unit and 11.25° phase shifting unit; medium phase shifting unit: 22.5° phase shifting unit and 45° phase shifting unit; large phase shifting unit: 90° phase shifting unit and 180° phase shifting unit.

[0077] Among them, the small phase shift unit and the medium phase shift unit adopt a low-pass and band-pass switching phase shifter structure. The low-pass and band-pass switching phase shifter structure has a smaller circuit area when used to achieve a small phase shift and has a higher phase shift accuracy, so it is more suitable for small and medium phase shift units. The large phase shift unit adopts a high-pass and low-pass switching phase shifter structure. Compared with the low-pass and band-pass switching phase shifter structure, the high-pass and low-pass switching phase shifter structure has a smaller circuit area when used to achieve a larger phase shift, and the obtained phase shift is relatively flat and has a larger working bandwidth. Therefore, it is more suitable for large phase shift units and can increase the working frequency band of the phase shifter.

[0078] The structural design of the phase shifter provided in the embodiment of the present invention has high flexibility, and each phase shift unit therein can be controlled individually. By reasonably adjusting the working state of each phase shift unit, the required phase shifting function can be achieved within the range of 0°-360°, and the phase shifting accuracy is improved while having lower power consumption.

[0079] Among them, the 5.625° phase shift unit, 11.25° phase shift unit, 22.5° phase shift unit and 45° phase shift unit used to achieve small and medium phase shifts adopt a low-pass, band-pass switching phase shifter structure. The circuit structure of this structure is simple, the phase shift is flat, and the circuit area required for achieving small and medium phase shifts is small. The 90° phase shift unit and 180° phase shift unit used to achieve large phase shifts adopt a high-pass, low-pass switching phase shifter structure. This structure has a wider operating frequency band and flat phase shift, and can save circuit area when used to achieve larger phase shifts. The signal phase difference between the high-pass circuit and the low-pass circuit in the phase shift unit can be compensated for each other, so that the phase shifter can have a wider operating frequency band.

[0080] In one embodiment of the present invention, the first phase shift unit, the second phase shift unit, the third phase shift unit, the fourth phase shift unit, the fifth phase shift unit and the sixth phase shift unit are cascaded in sequence.

[0081] As an example, the phase shifter provided in the embodiment of the present invention may specifically include: a 5.625° phase shift unit, a 90° phase shift unit, a 45° phase shift unit, an 11.25° phase shift unit, a 180° phase shift unit, and a 22.5° phase shift unit, which are cascaded in sequence. Furthermore, the signal is specifically input into the phase shifter from the input end of the 5.625° phase shift unit, and output from the phase shifter from the output end of the 22.5° phase shift unit;

[0082] Specifically, the cascade sequence of each phase shifter unit can ensure that the standing wave performance and phase shifting performance of the phase shifter meet the system design requirements. Therefore, the phase shifter provided by the embodiment of the present invention achieves the advantages of wide operating frequency band, large degree of freedom, good linearity and small area by limiting the specific cascade sequence between each phase shifter unit and optimizing the structure adopted by each phase shifter unit.

[0083] In the RF millimeter wave circuit used by the phase shifter, the phase shift is mainly introduced by reactive elements including inductors and capacitors. The areas of the capacitors and resistors in the circuit are relatively small, while the area of ​​the inductors is relatively large. Therefore, the area of ​​the phase shifter circuit mainly depends on the area of ​​the inductors. Based on this, the embodiment of the present invention specifically limits the structure adopted by each phase shift unit while ensuring that the phase shifter has a wider working flat band, and adopts a phase shifter structure with a small number of required inductors to reduce the area of ​​the phase shifter circuit. The structures of each phase shift unit are described separately in combination with specific examples below.

[0084] Figure 2 is a schematic diagram of the circuit structure of the first phase shifting unit and the fourth phase shifting unit provided in an embodiment of the present invention, see Figure 2 , the first phase shift unit / the fourth phase shift unit includes: a first inductor L1, a second inductor L2, a first capacitor C1, a second capacitor C2, a first transistor M1 and a second transistor M2;

[0085] The source of the first transistor M1 is connected to the first end of the first inductor L1 and the first end of the first capacitor C1;

[0086] The drain of the first transistor M1 is connected to the second end of the first inductor L1 and the first end of the second capacitor C2;

[0087] The drain of the second transistor M2 is connected to the second end of the first capacitor C1, the second end of the second capacitor C2 and the first end of the second inductor L2;

[0088] The source of the second transistor M2 is connected to the second end of the second inductor L2 and is grounded;

[0089] An input end of the first phase shift unit / fourth phase shift unit is connected to the source of the first transistor M1, the first end of the first inductor L1 and the first end of the first capacitor C1, and an output end of the first phase shift unit / fourth phase shift unit is connected to the drain of the first transistor M1, the second end of the first inductor L1 and the first end of the second capacitor C2;

[0090] The gate of the first transistor M1 is connected to the first control voltage V1, and the gate of the second transistor M2 is connected to the second control voltage

[0091] The above phase shifter structure can be specifically understood as a π-type phase shifter structure. As an example, the first phase shifter unit / fourth phase shifter unit using the above structure can specifically be a phase shifter unit for achieving 5.625° / 11.25° phase shift, that is, a small phase shifter unit.

[0092] Specifically, the phase shifter structure has a simple circuit structure and requires a small number of inductors. When used to achieve a small phase shift, the required inductance value is small, the circuit area is small, and the phase shift is flat and has a high phase shift accuracy. Therefore, the above design can be used for small phase shift units.

[0093] The embodiment of the present invention is described in detail below by taking the first phase shifting unit being a 5.625° phase shifting unit and the fourth phase shifting unit being a 11.25° phase shifting unit as an example.

[0094] In one or more embodiments of the present invention, the transistors used in each phase shift unit may specifically refer to MOS tubes (Metal Oxide Semiconductor Field Effect Transistor). Each transistor specifically includes a gate, a source and a drain. For example, Figure 2 The G electrode of the first transistor M1 shown in FIG. 1 is the gate electrode, the S electrode is the source electrode, and the D electrode is the drain electrode.

[0095] In practical applications, the gate of the MOS tube is insulated from its source and drain. When a positive voltage is applied to the source of the MOS tube, the MOS tube is turned on, that is, the signal can pass through the path between its source and drain. Otherwise, the MOS tube is turned off, that is, the signal cannot pass through the MOS tube.

[0096] The second control voltage in the embodiment of the present invention In can be understood as a reverse sign, therefore, the second control voltage It can be understood as the reverse voltage of the first control voltage V1. For example, when the input first control voltage V1 is at a high level and the first transistor M1 is turned on, the second control voltage is low level, the first transistor M1 is turned off, or the first control voltage V1 is low level, the first transistor M1 is turned off, then the second control voltage is high level, the first transistor M1 is turned on, and the same applies to the third control voltage, the fourth control voltage, the fifth control voltage and the sixth control voltage involved subsequently.

[0097] Therefore, by changing the first control voltage V1 and the second control voltage The signal can be passed through a 5.625° phase shift unit or a 11.25° phase shift unit through different paths to realize the switching of the phase shift unit between the reference state and the phase shift state. Figure 2 The working principle of the π-type phase shifter structure is described in detail.

[0098] When the first control voltage V1 is at a high level, the second control voltage When it is at a low level, the first transistor M1 is turned on, the second transistor M2 is turned off, and the signal input to the π-type phase shifter structure is output after passing through the on-resistance of the first transistor M1. The signal phase does not change, and the phase shift unit is in a reference state.

[0099] When the first control voltage V1 is at a low level, the second control voltage When it is at a high level, the first transistor M1 is turned off, the second transistor M2 is turned on, and the input signal passes through the π-type filter network composed of the first inductor L1, the first capacitor C1 and the second capacitor C2, and the phase of the output signal changes, and the phase shift unit is in a phase shift state.

[0100] The difference in phase shift between the reference state and the phase shift state of the π-type phase shifter structure is the relative phase shift that the phase shift unit can achieve.

[0101] Specifically, the π-type phase shifter structure used in the 5.625° phase shift unit can achieve a 5.625° phase shift function, and the π-type phase shifter structure used in the 11.25° phase shift unit can achieve a 11.25° phase shift function. The specific parameters of each circuit element in the 5.625° phase shift unit and the 11.25° phase shift unit can be selected according to actual needs.

[0102] Furthermore, in one or more embodiments of the present invention, in order to prevent the signal from leaking from the source and drain of the MOS tube through the gate, an isolation resistor R may be connected in series between each MOS tube and the control voltage.

[0103] In the embodiment of the present invention, a MOS tube with a smaller area is embedded in the first phase shift unit / the fourth phase shift unit, and the MOS tube is turned on or off by applying an external control voltage, thereby realizing the switching of the first phase shift unit / the fourth phase shift unit between different working states, replacing the selection function of the SPDT (Single Pole Double Throw) switch, and realizing that the first phase shift unit / the fourth phase shift unit has a smaller circuit area.

[0104] Figure 3 is a schematic diagram of the circuit structure of the third phase shift unit and the sixth phase shift unit provided in an embodiment of the present invention, see Figure 3 In one embodiment of the present invention, the third phase shift unit / sixth phase shift unit specifically includes: a third inductor L3, a fourth inductor L4, a fifth inductor L5, a third transistor M3, a fourth transistor M4 and a fifth transistor M5;

[0105] The source of the third transistor M3 is connected to the first end of the third inductor L3;

[0106] The drain of the third transistor M3 is connected to the first end of the fourth inductor L4;

[0107] A drain of the fourth transistor M4 is connected to the second end of the third inductor L3 and the second end of the fourth inductor L4;

[0108] The drain of the fifth transistor M5 is connected to the source of the fourth transistor M4 and the first end of the fifth inductor L5;

[0109] A source of the fifth transistor M5 is connected to the second end of the fifth inductor L5 and is grounded;

[0110] An input end of the third phase shift unit / sixth phase shift unit is connected to the source of the third transistor M3 and the first end of the third inductor L3, and an output end of the third phase shift unit / sixth phase shift unit is connected to the drain of the third transistor M3 and the first end of the fourth inductor L4;

[0111] The gates of the third transistor M3 and the fourth transistor M4 are connected to the third control voltage V2, and the gate of the fifth transistor M5 is connected to the fourth control voltage V3.

[0112] The above phase shifter structure can be specifically understood as a T-type phase shifter structure. As an example, the third phase shifter unit / sixth phase shifter unit using the above structure can specifically be a phase shifter unit for achieving 45° / 22.5° phase shift, that is, a medium phase shifter unit.

[0113] Specifically, when used to achieve a phase shift of a specific magnitude, the inductor element used in the π-type phase shifter structure needs to have a higher inductance value than the T-type phase shifter structure. In this case, the area of ​​the inductor element is larger, which is not conducive to integration. Therefore, the phase shift unit in the embodiment of the present invention adopts a T-type phase shifter structure, so that the 22.5° phase shifter unit and the 45° phase shifter unit have a smaller circuit area, and the phase shift of the structure is relatively flat.

[0114] The embodiment of the present invention is described in detail below by taking the third phase shifting unit being a 45° phase shifting unit and the sixth phase shifting unit being a 22.5° phase shifting unit as an example.

[0115] By changing the third control voltage V2 and the fourth control voltage The signal can be passed through the 22.5° phase shift unit or the 45° phase shift unit through different paths to realize the switching of the phase shift unit between the reference state and the phase shift state. Figure 3 The working principle of the T-type phase shifter structure is described in detail.

[0116] When the third control voltage V2 is at a high level, the fourth control voltage When it is at a low level, the third transistor M3 and the fourth transistor M4 are turned on, the fifth transistor M5 is turned off, and the signal input to the T-type phase shifter structure is output after passing through the on-resistance of the third transistor M3. The signal phase does not change, and the phase shift unit is in a reference state.

[0117] When the third control voltage V2 is at a low level, the fourth control voltage When it is at a high level, the third transistor M3 and the fourth transistor M4 are turned off, the fifth transistor M5 is turned on, and the input signal passes through the T-type filter network composed of the third inductor L3, the fourth inductor L4 and the fifth inductor L5, the phase of the output signal changes, and the phase shift unit is in a phase shift state.

[0118] The difference in phase shift between the reference state and the phase shift state of the T-type phase shifter structure is the relative phase shift that the phase shift unit can achieve.

[0119] Specifically, the T-type phase shifter structure used by the 22.5° phase shift unit can achieve a 22.5° phase shift function, and the T-type phase shifter structure used by the 45° phase shift unit can achieve a 45° phase shift function. The specific parameters of each circuit element in the 22.5° phase shift unit and the 45° phase shift unit can be selected according to actual needs.

[0120] In one embodiment of the present invention, the second phase shifting unit / fifth phase shifting unit comprises: a high-pass filter branch and a low-pass filter branch, and the high-pass filter branch and the high-pass filter branch are connected in parallel.

[0121] The second phase shifting unit / fifth phase shifting unit adopting the above structure may specifically be a phase shifting unit for realizing 90° / 180° phase shifting, that is, a large phase shifting unit.

[0122] Specifically, the phase shift of 90° and 180° can also be achieved through the aforementioned low-pass and band-pass switching phase shifter structure, but the inductance value required to achieve a larger phase shift is very large, which will cause a waste of area, and the flatness of the phase shift state is also poor when a large phase shift is achieved through the low-pass and band-pass switching phase shifter structure. Therefore, the 90° phase shift unit and the 180° phase shift unit of the phase shifter provided in the embodiment of the present invention adopt a high-pass and low-pass switching phase shifter structure composed of a high-pass filter branch and a low-pass filter branch connected in parallel, and the phase shift unit specifically includes two paths of a high-pass network and a low-pass network, which can reduce the use of inductance and reduce the circuit area.

[0123] Furthermore, the use of a high-pass and low-pass switching phase shifter structure to design a 90° phase shift unit and a 180° phase shift unit can effectively increase the operating frequency band of the phase shifter.

[0124] Figure 4 is a schematic diagram of the circuit structure of the second phase shifting unit and the fifth phase shifting unit provided in an embodiment of the present invention, see Figure 4 In one embodiment of the present invention, the second phase shift unit / fifth phase shift unit includes: a sixth inductor L6, a seventh inductor L7, an eighth inductor L8, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8 and a ninth transistor M9;

[0125] The source of the sixth transistor M6 is connected to the source of the ninth transistor M9;

[0126] The drain of the sixth transistor M6 is connected to the first end of the third capacitor C3;

[0127] A source of the seventh transistor M7 is connected to a first end of the fourth capacitor C4;

[0128] A first end of the sixth inductor L6 is connected to the second end of the third capacitor C3 and the second end of the fourth capacitor C4, and a second end of the sixth inductor L6 is grounded;

[0129] The drain of the eighth transistor M8 is connected to the drain of the seventh transistor M7;

[0130] A source of the eighth transistor M8 is connected to a first end of the seventh inductor L7;

[0131] A drain of the ninth transistor M9 is connected to a first end of the eighth inductor L8;

[0132] A first end of the fifth capacitor C5 is connected to the second end of the seventh inductor L7 and the second end of the eighth inductor L8, and a second end of the fifth capacitor C5 is grounded;

[0133] An input end of the second phase shift unit / fifth phase shift unit is connected to the source of the sixth transistor M6 and the source of the ninth transistor M9, and an output end of the second phase shift unit / fifth phase shift unit is connected to the drain of the seventh transistor M7 and the drain of the eighth transistor M8;

[0134] The gates of the sixth transistor M6 and the seventh transistor M7 are connected to the fifth control voltage V3, and the gates of the eighth transistor M8 and the ninth transistor M9 are connected to the sixth control voltage V4.

[0135] in, Figure 4 The third capacitor C3, the fourth capacitor C4 and the sixth inductor L6 shown in the figure constitute a T-type high-pass filter network, that is, the aforementioned high-pass filter branch, and the seventh inductor L7, the eighth inductor L8 and the fifth capacitor C5 constitute a T-type low-pass filter network, that is, the aforementioned low-pass filter branch.

[0136] The embodiment of the present invention is described in detail below by taking the second phase shifting unit being a 90° phase shifting unit and the fifth phase shifting unit being a 180° phase shifting unit as an example.

[0137] Specifically, when the signal passes through the low-pass filter network, the phase of the signal will be delayed, and when the signal passes through the high-pass filter network, the phase of the signal will be advanced. Therefore, by using the configured MOS tube to switch the circuit between the high-pass filter network and the low-pass filter network, the signal can be phase shifted, so that the high-pass and low-pass switching type phase shifter structure has a wider operating frequency band than other types of phase shifter structures. The phase shift amount is specifically the sum of the angles of the phase shifts generated by the high-pass network and the low-pass network. For example, if the high-pass filter network can cause the signal to produce a 45° phase shift, and the low-pass filter network can cause the signal to produce a -45° phase shift, then the hybrid phase shifter structure can achieve a 90° phase shift.

[0138] Combine the following Figure 4The working principle of the high-pass and low-pass switching phase shifter structure is explained in detail.

[0139] When the fifth control voltage V3 is at a high level, the sixth control voltage When the fifth control voltage V3 is at a low level, the sixth transistor M6 and the seventh transistor M7 are turned on, the eighth transistor M8 and the ninth transistor M9 are turned off, and the signal input to the hybrid phase shifter structure is output after passing through the T-type high-pass filter network composed of the third capacitor C3, the fourth capacitor C4 and the sixth inductor L6, and the phase of the signal is advanced. When the voltage is high, the sixth transistor M6 and the seventh transistor M7 are turned off, the eighth transistor M8 and the ninth transistor M9 are turned on, and the signal input to the hybrid phase shifter structure is output after passing through the T-type low-pass filter network composed of the seventh inductor L7, the eighth inductor L8 and the fifth capacitor C5, and the phase of the signal is delayed. By subtracting the phase of the output signal in the T-type high-pass filter network and the T-type low-pass filter network, the relative phase shift between the output signals can be obtained.

[0140] Moreover, in an embodiment of the present invention, MOS tubes are added as switches to the input and output ends of the T-type high-pass filter network, as well as to the input and output ends of the T-type low-pass filter network, which can enhance the isolation between the two networks, avoid crosstalk between the two signals, and further improve the performance of the phase shifter.

[0141] Figure 5 : is a schematic diagram of the circuit structure of the phase shifter provided in an embodiment of the present invention. Figure 5 The phase shifter provided in the embodiment of the present invention is further described.

[0142] Figure 5 The circuit structure of each phase shift unit in the phase shifter is specifically shown in FIG. 6 . The six phase shift units can be integrated on a chip. Each of the phase shift units can be connected to a set of control voltages. By changing the control voltages V1 and V2, the control voltages V3 and V4 can be controlled. and By using one or more control voltages in the control circuit, the phase shift of a certain phase shift unit can be increased or removed. By switching the control voltage according to actual needs, a phase shift function with a step of 5.625° in the range of 0°-360° can be achieved.

[0143] And, based on Figure 5 It can be seen that the phase shifter provided in the embodiment of the present invention designs each phase shift unit by using a phase shifter structure with a built-in MOS tube, replacing a SPDT switch with a larger area, and the structure of each phase shift unit uses a smaller number of inductors, thereby enabling miniaturization of the phase shifter.

[0144] As an example, the phase shifter may be designed using TSMC 65nm CMOS process.

[0145] about Figure 5 For other circuit elements shown in the figure, reference can be made to the description in the foregoing embodiments of the present invention.

[0146] In one embodiment of the present invention, the operating frequency band of the phase shifter covers the Ku band and the Ka band, and the phase shift range of the phase shifter in the Ku band and the Ka band is 0°-360°.

[0147] Figure 6 is a phase shift test result diagram of the phase shifter provided by an embodiment of the present invention, Figure 6 The horizontal axis is the signal frequency freq, in GHz, and the vertical axis is the S parameter S-Param. Figure 6 It can be understood as the phase shift, the unit is angle (deg), Figure 6 The two curves in the figure are the phase changes caused by the phase shifter on the input signal under two different phase shifting states.

[0148] based on Figure 6 It can be seen that the phase shifter provided in the embodiment of the present invention can achieve a phase shift of about 360° in the operating frequency band of 10 GHz-40 GHz. Specifically, when the operating frequency of the phase shifter provided in the embodiment of the present invention is 10 GHz, one phase shift state can cause a phase change of about -180° to -170°, and the other phase shift state can cause a phase change of about 170° to 180°. Therefore, by switching the phase shifter between these two phase shift states, a phase shift of 340° to 360° can be achieved.

[0149] That is to say, the phase shifter provided by the embodiment of the present invention can achieve a larger phase shift amount within a wider operating frequency band.

[0150] Based on the same inventive concept, an embodiment of the present invention further provides an integrated transceiver channel, including: a signal transmission link, a signal reception link, a transceiver conversion switch, and a phase shifter provided in any of the above embodiments;

[0151] The transceiver conversion switch is configured to connect the phase shifter to the signal transmission link when transmitting a signal, and to connect the broadband six-phase shifter to the signal reception link when receiving a signal;

[0152] The phase shifter is configured to shift the phase of a signal in a signal transmission link when transmitting a signal, and to shift the phase of a signal in a signal reception link when receiving a signal.

[0153] The transmit / receive conversion switch may be specifically designed using an SPDT structure.

[0154] In practical applications, since the operating frequency bands of the transceiver channels in the receiving and sending signal projects are different, and the operating frequency band of the phase shifter is limited, a phase shifter is usually integrated in the receiving channel and the transmitting channel respectively, and the physical layouts of the receiving channel and the transmitting channel are completely separated.

[0155] The working frequency band of the phase shifter provided in the aforementioned embodiment of the present invention covers the Ku band and Ka band commonly used in satellite communications, so it can be multiplexed in the receiving channel and the transmitting channel. Therefore, by configuring a transceiver switching switch in the channel, connecting the phase shifter to the signal transmission link when transmitting the signal, and connecting the phase shifter to the signal receiving link when receiving the signal, the transceiver function switching of the phase shifter can be realized, and then according to the working state of the phase shifter in different links, the attenuation state of the corresponding attenuator is adjusted to achieve channel amplitude compensation, and the integrated structure of the transceiver channel can be obtained. For the specific structure of the signal transmission link and the signal receiving link, please refer to the content in the relevant technology.

[0156] Based on the same inventive concept, an embodiment of the present invention further provides a phased array system, comprising one or more integrated transceiver channels provided by the aforementioned embodiments of the present application.

[0157] Specifically, the phase shifter provided in the aforementioned embodiment of the present invention has a wide operating frequency band and can realize the integration of transmitting and receiving channels, and also has the characteristics of large degree of freedom and good linearity. Therefore, when applied to a phased array system, it can effectively improve the performance of the phased array system, especially for the application of phased array systems in ground portable terminal communication equipment in satellite communication systems.

[0158] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0159] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the integrated transceiver channel and phased array system embodiment, since it is basically similar to the broadband six-phase shifter embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the broadband six-phase shifter embodiment.

[0160] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A phase shifter, characterized in that: include: A first phase shift unit, a second phase shift unit, a third phase shift unit, a fourth phase shift unit, a fifth phase shift unit and a sixth phase shift unit; Wherein, the first phase shift unit, the third phase shift unit, the fourth phase shift unit and the sixth phase shift unit adopt a low-pass, band-pass switching phase shifter structure; the second phase shift unit and the fifth phase shift unit adopt a high-pass, low-pass switching phase shifter structure; The phase shifter is used to shift the phase of a received signal when the signal transceiver device configured with the phase shifter is used to receive a signal, and to shift the phase of a transmitted signal when the signal transceiver device is used to transmit a signal.

2. The phase shifter according to claim 1, characterized in that: The first phase shift unit / the fourth phase shift unit comprises: a first inductor (L1), a second inductor (L2), a first capacitor (C1), a second capacitor (C2), a first transistor (M1) and a second transistor (M2); a source of the first transistor (M1) is connected to a first end of the first inductor (L1) and a first end of the first capacitor (C1); The drain of the first transistor (M1) is connected to the second end of the first inductor (L1) and the first end of the second capacitor (C2); The drain of the second transistor (M2) is connected to the second end of the first capacitor (C1), the second end of the second capacitor (C2) and the first end of the second inductor (L2); The source of the second transistor (M2) is connected to the second end of the second inductor (L2) and is grounded; An input end of the first phase shift unit / the fourth phase shift unit is connected to the source of the first transistor (M1), the first end of the first inductor (L1) and the first end of the first capacitor (C1), and an output end of the first phase shift unit / the fourth phase shift unit is connected to the drain of the first transistor (M1), the second end of the first inductor (L1) and the first end of the second capacitor (C2); The gate of the first transistor (M1) is connected to a first control voltage V1, and the gate of the second transistor (M2) is connected to a second control voltage 3. The phase shifter according to claim 1, characterized in that The third phase shift unit / the sixth phase shift unit comprises: a third inductor (L3), a fourth inductor (L4), a fifth inductor (L5), a third transistor (M3), a fourth transistor (M4) and a fifth transistor (M5); The source of the third transistor (M3) is connected to the first end of the third inductor (L3); The drain of the third transistor (M3) is connected to the first end of the fourth inductor (L4); The drain of the fourth transistor (M4) is connected to the second end of the third inductor (L3) and the second end of the fourth inductor (L4); The drain of the fifth transistor (M5) is connected to the source of the fourth transistor (M4) and the first end of the fifth inductor (L5); The source of the fifth transistor (M5) is connected to the second end of the fifth inductor (L5) and is grounded; The input end of the third phase shift unit / the sixth phase shift unit is connected to the source of the third transistor (M3) and the first end of the third inductor (L3), and the output end of the third phase shift unit / the sixth phase shift unit is connected to the drain of the third transistor (M3) and the first end of the fourth inductor (L4); The gates of the third transistor (M3) and the fourth transistor (M4) are connected to a third control voltage V2, and the gate of the fifth transistor (M5) is connected to a fourth control voltage V3.

4. The phase shifter according to claim 1, characterized in that: The second phase shifting unit / the fifth phase shifting unit comprises: a high-pass filter branch and a low-pass filter branch, and the high-pass filter branch and the high-pass filter branch are connected in parallel.

5. The phase shifter according to claim 4, characterized in that: The second phase shift unit / the fifth phase shift unit includes a sixth inductor (L6), a seventh inductor (L7), an eighth inductor (L8), a third capacitor (C3), a fourth capacitor (C4), a fifth capacitor (C5), a sixth transistor (M6), a seventh transistor (M7), an eighth transistor (M8) and a ninth transistor (M9); The source of the sixth transistor (M6) is connected to the source of the ninth transistor (M9); The drain of the sixth transistor (M6) is connected to the first end of the third capacitor (C3); The source of the seventh transistor (M7) is connected to the first end of the fourth capacitor (C4); A first end of the sixth inductor (L6) is connected to a second end of the third capacitor (C3) and a second end of the fourth capacitor (C4), and a second end of the sixth inductor (L6) is grounded; The drain of the eighth transistor (M8) is connected to the drain of the seventh transistor (M7); The source of the eighth transistor (M8) is connected to the first end of the seventh inductor (L7); The drain of the ninth transistor (M9) is connected to the first end of the eighth inductor (L8); A first end of the fifth capacitor (C5) is connected to a second end of the seventh inductor (L7) and a second end of the eighth inductor (L8), and a second end of the fifth capacitor (C5) is grounded; The input end of the second phase shift unit / the fifth phase shift unit is connected to the source of the sixth transistor (M6) and the source of the ninth transistor (M9), and the output end of the second phase shift unit / the fifth phase shift unit is connected to the drain of the seventh transistor (M7) and the drain of the eighth transistor (M8); The gates of the sixth transistor (M6) and the seventh transistor (M7) are connected to a fifth control voltage V3, and the gates of the eighth transistor (M8) and the ninth transistor (M9) are connected to a sixth control voltage V4.

6. The phase shifter according to claim 1, characterized in that The first phase shift unit is used to achieve a 5.625° phase shift, the second phase shift unit is used to achieve a 90° phase shift, the third phase shift unit is used to achieve a 45° phase shift, the fourth phase shift unit is used to achieve a 11.25° phase shift, the fifth phase shift unit is used to achieve a 180° phase shift, and the sixth phase shift unit is used to achieve a 22.5° phase shift.

7. The phase shifter according to claim 6, characterized in that: The first phase shift unit, the second phase shift unit, the third phase shift unit, the fourth phase shift unit, the fifth phase shift unit and the sixth phase shift unit are cascaded in sequence.

8. The phase shifter according to any one of claims 1 to 7, characterized in that: The operating frequency band of the phase shifter covers the Ku band and the Ka band, and the phase shift range of the phase shifter in the Ku band and the Ka band is 0°-360°.

9. An integrated transceiver channel, characterized in that: include: A signal transmission link, a signal reception link, a transceiver conversion switch, and a phase shifter as described in any one of claims 1 to 8; The transmit / receive conversion switch is configured to connect the phase shifter to the signal transmission link when transmitting a signal, and to connect the phase shifter to the signal reception link when receiving a signal; The phase shifter is configured to perform phase shift on the signal in the signal transmission link when transmitting a signal, and to perform phase shift on the signal in the signal reception link when receiving a signal.

10. A phased array system, characterized in that: Comprising one or more integrated transceiver channels as claimed in claim 9.

Images