Silicon-based solar cell manufacturing method based on dry-wet separation process and cell
Through the separation of wet and dry process, the chemical emission problems caused by wet process in silicon-based solar cell manufacturing are solved, low-cost and efficient production in the European and American markets are achieved, and the competitiveness of the enterprise is enhanced.
Patent Information
- Application Number
- CN202411507358.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-28
- Publication Date
- 2025-02-11
AI Technical Summary
In the existing silicon-based solar cell manufacturing process, the wet process uses a large number of corrosive acids and alkaline solutions, which leads to chemical emission problems, increases factory construction and operation costs, and affects the competitiveness of enterprises in the European and American markets.
The wet process is used to separate the wet process from the dry process. The wet process is carried out in areas far away from dense populations, and the dry process is carried out in metropolitan areas. The dry emitter formation method and dry silicon oxide are used. Process to reduce chemical waste emissions in dry-process factories.
It significantly reduces chemical waste emissions in dry-process factory sites, reduces manufacturing facilities costs, and improves the production efficiency and competitiveness of silicon-based solar cells.
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Figure CN119421535A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of silicon-based solar cells, and in particular relates to a method for manufacturing a silicon-based solar cell based on a separation dry-wet process, and a solar cell device manufactured by the method. Background Art
[0002] With the rapid development of China's solar photovoltaic technology, China's solar photovoltaic industry has formed a large scale. In addition to meeting domestic demand, many Chinese solar photovoltaic manufacturing companies are currently working hard to set up overseas manufacturing plants. However, many European and American countries have many restrictions on chemical emissions from solar cell manufacturing plants, resulting in the cost of building facilities for battery factories in these Western countries being 5-10 times the domestic cost. This has further led to a significant increase in the investment cost of overseas photovoltaic battery manufacturing plants, which in turn has affected the construction of photovoltaic battery manufacturing plants by Chinese companies in European and American countries.
[0003] Currently, most of the more efficient silicon-based solar cells have the following structures, or a combination of these structures: 1. p-type passivated emitter and back contact (p-PERC) solar cells and n-type passivated emitter back fully diffused (n-PERT) solar cells; 2. Tunneling oxide passivated contact (TOPCon) solar cells; 3. Heterojunction (HJT) solar cells; 4. Interdigitated back contact (IBC) solar cells.
[0004] The traditional method of manufacturing these silicon-based solar cells requires several wet processes, including but not limited to the following steps: 1) Texturing the front surface of a single-sided solar cell and the front and back surfaces of a double-sided solar cell; 2) Removal of borosilicate glass (BSG) and phosphosilicate glass (PSG) caused by common doping diffusion processes; 3) Removing the velvet surface on the back of a single-sided solar cell; 4) Etch away the BSG or PSG at the edge of the silicon wafer to achieve electrical insulation between the heavily doped emitter layer and the heavily doped polysilicon layer.
[0005] In terms of the texturing step, the traditional tunneling oxide passivation contact (TOPCon) and p-type passivated emitter and back contact (p-PERC) solar cell manufacturing processes use wet chemical etching processes to produce the texture surface, such as: 1) Pyramid texturing (monocrystalline silicon): One of the most common techniques for texturing silicon-based solar cells is to etch the surface of a monocrystalline silicon wafer at different rates to form a pyramid texture. Silicon is etched using potassium hydroxide (KOH) or sodium hydroxide (NaOH) solutions to form random or uniform pyramid structures on the surface. These pyramids increase the surface area and capture incident light by causing multiple reflections.
[0006] 2) Acid etching (polysilicon): For polycrystalline silicon wafers, a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) is used for isotropic etching to form a random rough surface, thereby reducing reflectivity and enhancing light capture. This is critical for polycrystalline silicon cells because their grain structure is not capable of producing a uniform pyramid velvet surface.
[0007] These wet processes use large amounts of corrosive acid and alkaline solutions. For example, a TOPCon production line requires about 3,000 liters of hydrofluoric acid, 3,000 liters of sodium hydroxide, and 400 liters of hydrochloric acid solution for every million solar cells produced. Therefore, a 5GW TOPCon plant will use 1,800 cubic meters of HF and NaOH and 240 cubic meters of HCl per year. These large amounts of acid and alkali solutions are harmful to the health of local residents unless they are treated through expensive chemical treatment facilities to reduce the amount of substances discharged into the environment to a level that meets strict environmental standards. For example, in the United States, a 1GW TOPCon solar cell production line costs at least $100 million to build, and most of this cost is used to build surrounding facilities to support the operation of the main production equipment.
[0008] Even if these large chemical processing plants require high facility construction costs to make their emissions of HF, HCl and NaOH or the resulting compounds meet environmental standards, residents near the plants may still be concerned about emissions. Some residents may use certain political influence and local laws and regulations to cause these plants to be completely closed. Although investors have spent a lot of money to build these plants, if such plants need to be relocated, most of the investment will be wasted.
[0009] Therefore, in order for investors to be able to profitably build silicon-based photovoltaic production plants around the world, we need to invent a new process that can be used to mass-produce efficient silicon-based solar cells while limiting the use of wet processes that require large amounts of chemical waste. Summary of the invention
[0010] In response to the problems existing in the above-mentioned prior art, the present invention provides a silicon-based solar cell manufacturing method and battery based on a separated dry-wet process, which replaces the existing process of mixing dry and wet processes in the same factory site with a new "separated wet-dry" process, thereby significantly reducing chemical waste emissions in dry factory sites (i.e., in metropolitan areas or nearby areas where employees gather) and reducing the cost of manufacturing facilities.
[0011] In order to solve the above technical problems, the present invention is implemented through the following technical solutions: A method for manufacturing silicon-based solar cells based on a separated dry-wet process, wherein the method adopts a separated dry-wet process to prepare a tunneling oxide passivation contact (TOPCon) solar cell device, and does not require a wet chemical process in a dry site to reduce the cost of manufacturing facilities. The specific steps are as follows: S101. At a first factory site, i.e., a wet process factory site, a velvet surface is formed on a front side (light incident side) of an n-type silicon wafer by using a wet chemical velvet surface manufacturing method to enhance light absorption (light capture), and then, if necessary, a wet chemical polishing method is used to polish a back side of the n-type silicon wafer; The wet process plant site can be selected in a remote area away from densely populated areas, where chemical emission standards can be met at low cost after the discharged chemicals are treated in an appropriate manner; S102, transferring the n-type silicon wafer after front-side texturing and back-side polishing to a second factory site, i.e., a dry process factory site, which is usually where many employees are located, or is usually located in or near a metropolitan area that is convenient for recruiting and placing workers; In a dry process factory, a boron-doped emitter layer of a pn junction is formed on the velvet surface of the front side of an n-type silicon wafer by using a dry emitter formation method; the dry emitter formation method does not cause deposition of dopants on the back side (back side or non-light incident side) and edge of the silicon wafer; S103, in a dry process factory site, using a dry silicon oxide forming method, forming a silicon oxide tunneling layer on the back side of the n-type silicon wafer as a passivation layer and capable of preventing hole carriers from diffusing into the back electrode; S104, in a dry process factory site, using a dry polysilicon formation method to form a polysilicon layer heavily doped with phosphorus on the silicon oxide tunneling layer on the back side of the n-type silicon wafer; the dry polysilicon formation method does not cause phosphorus to be deposited on the front side and edge of the n-type silicon wafer; S105, in a dry process factory site, using a dry aluminum oxide forming method to form an aluminum oxide layer for front passivation on a boron-doped emitter layer of a pn junction on the front side of an n-type silicon wafer; S106. In a dry process factory, using a dry silicon nitride forming method, a front silicon nitride layer is formed on the front aluminum oxide layer of the n-type silicon wafer as a front anti-reflection coating and a protective layer of the silicon wafer; S107, in a dry process factory site, using a dry silicon nitride forming method, forming a back silicon nitride layer as an anti-reflective coating and protective layer on the back side of the silicon wafer on the heavily phosphorus-doped polysilicon layer on the back side of the n-type silicon wafer; S108. In a dry process factory, a screen printing process is used to form a front metal electrode on the front silicon nitride layer of the n-type silicon wafer, and a back metal electrode is formed on the back silicon nitride layer of the n-type silicon wafer.
[0012] Furthermore, in step S101, the specific technical means of the wet chemical method for making the suede surface include but are not limited to etching processes using various acid and / or alkaline solutions.
[0013] Furthermore, in step S101, the specific technical means of the wet chemical polishing method include but are not limited to polishing processes using various alkaline solutions.
[0014] Furthermore, in step S102, the dry emitter formation method is an emitter formation method that does not result in the deposition of a doping layer on the back and edge of the n-type silicon wafer, and its specific technical means include but are not limited to: solid dopant thermal diffusion, PVD in-situ doping combined with annealing, ion implantation combined with annealing, dopant slurry combined with annealing, and dopant slurry combined with laser enhancement.
[0015] Furthermore, the method of combining ion implantation with annealing is: Boron ion implantation is used to create the pn junction of an n-type silicon wafer solar cell.
[0016] Further, the method of combining the dopant slurry with annealing is: A slurry containing a boron compound is applied to the front side of the n-type silicon wafer, and then a thermal diffusion process is used to drive boron atoms into the silicon lattice of the n-type silicon wafer.
[0017] Furthermore, the method of combining the dopant slurry with laser enhancement is: A slurry containing a boron compound is applied to the front side of an n-type silicon wafer, and then a laser excitation process is used to drive boron atoms into the silicon lattice of the n-type silicon wafer.
[0018] Furthermore, in step S103, the specific technical means of the dry silicon oxide formation method include but are not limited to: thermally growing a silicon oxide layer on a silicon wafer, growing a silicon oxide layer on a silicon wafer using radio frequency excited oxygen plasma, growing a silicon oxide layer on a silicon wafer using medium frequency excited oxygen plasma, growing a silicon oxide layer on a silicon wafer using ozone, and growing a silicon oxide layer on a silicon wafer using high temperature water vapor.
[0019] Furthermore, in step S104, the specific technical means of the dry polysilicon forming method include but are not limited to: combining PVD in-situ phosphorus doping with thermal activation.
[0020] Furthermore, in step S105, the specific technical means of the dry aluminum oxide forming method include but are not limited to: atomic layer deposition (ALD), high temperature crucible evaporation, and electron beam scanning heating evaporation.
[0021] Furthermore, in step S106 and step S107, the specific technical means of the dry silicon nitride forming method include but are not limited to: plasma enhanced chemical vapor deposition (PECVD) process.
[0022] A tunneling oxide passivation contact (TOPCon) solar cell device manufactured by the above-mentioned silicon-based solar cell manufacturing method based on the separation dry-wet process is characterized by comprising: Lightly doped n-type silicon wafer; A textured surface formed on the front side (light incident side) of the n-type silicon wafer by a wet chemical textured surface manufacturing method in a wet process factory site, wherein the textured surface is used to achieve light enhancement (light capture); A boron-doped emitter layer of a pn junction formed on the velvet surface using a dry emitter formation method that does not cause dopant deposition on the back side (back side or non-light-incident side) and edge of the silicon wafer at a dry process factory site; A silicon oxide tunneling layer is formed on the back side of the n-type silicon wafer by a dry silicon oxide forming method in a dry process factory, wherein the silicon oxide tunneling layer serves as a passivation layer and is used to prevent hole carriers from diffusing into the back electrode; A heavily phosphorus-doped polysilicon layer formed on the silicon oxide tunneling layer in a dry process factory site using a dry polysilicon formation method that does not cause phosphorus to be deposited on the front and edge of the silicon wafer; A front aluminum oxide layer is formed on the boron-doped emitter layer of the pn junction using a dry aluminum oxide forming method at a dry process factory site, wherein the front aluminum oxide layer is used for front passivation; A front silicon nitride layer is formed on the front aluminum oxide layer using a dry silicon nitride forming method at a dry process factory site, wherein the front silicon nitride layer serves as an anti-reflection coating and protective layer on the front side of the silicon wafer; forming a back silicon nitride layer on the heavily phosphorus-doped polysilicon layer using a dry silicon nitride forming method at a dry process factory site, wherein the back silicon nitride layer serves as an anti-reflective coating and protective layer on the back side of the silicon wafer; A front metal electrode formed on the front silicon nitride layer by a screen printing process at a dry process factory site; A back metal electrode is formed on the back silicon nitride layer by a screen printing process in a dry process factory.
[0023] A method for manufacturing silicon-based solar cells based on a separated dry-wet process, wherein the method adopts a separated dry-wet process to prepare a passivated emitter and rear contact (PERC) solar cell device, and does not require a wet chemical process in a dry site to reduce the cost of manufacturing facilities, and the specific steps are as follows: S201. At a first factory site, i.e., a wet process factory site, a velvet surface for enhancing light absorption (light capture) is formed on a front side (light incident side) of a p-type silicon wafer by using a wet chemical velvet surface manufacturing method, and then, if necessary, a wet chemical polishing method is used to polish a back side of the p-type silicon wafer; The wet process plant site may be selected in a remote area away from densely populated areas where chemical discharge standards can be easily met after the discharged chemicals are treated in an appropriate manner; S202, transferring the p-type silicon wafer after front-side texturing and back-side polishing to a second factory site, i.e., a dry process factory site, which is usually where many employees are located, or is usually located in or near a metropolitan area that is convenient for recruiting and placing workers; Then, in a dry process factory, a phosphorus-doped emitter layer of a pn junction is formed on the velvet surface on the front side of the p-type silicon wafer by using a dry emitter formation method; the dry emitter formation method does not cause deposition of dopants on the back side (back side or non-light incident side) and edge of the p-type silicon wafer; S203, in a dry process factory, using a dry aluminum oxide forming method to form a back aluminum oxide layer as a passivation layer on the back side of the p-type silicon wafer; S204, in a dry process factory site, using a dry silicon nitride forming method to form a back silicon nitride layer on the back aluminum oxide layer of the p-type silicon wafer as a back anti-reflection coating and protective layer on the back of the silicon wafer; S205, in a dry process factory, using a dry silicon nitride forming method, forming a front silicon nitride layer as a front anti-reflection coating and protective layer of the silicon wafer on the phosphorus-doped emitter layer of the pn junction on the front side of the p-type silicon wafer; S206. In a dry process factory, a screen printing process is used to form a front metal electrode on the front silicon nitride layer of the p-type silicon wafer, and a back metal electrode is formed on the back silicon nitride layer of the p-type silicon wafer.
[0024] Furthermore, in step S201, the specific technical means of the wet chemical method for making the suede surface include but are not limited to etching processes using various acid and / or alkaline solutions.
[0025] Furthermore, in step S101, the specific technical means of the wet chemical polishing method include but are not limited to polishing processes using various alkaline solutions.
[0026] Furthermore, in step S202, the dry emitter formation method is an emitter formation method that does not result in the deposition of a doping layer on the back and edge of a p-type silicon wafer, and its specific technical means include but are not limited to: solid dopant thermal diffusion, PVD in-situ doping combined with annealing, ion implantation combined with annealing, dopant slurry combined with annealing, and dopant slurry combined with laser enhanced formation of a selective emitter (SE).
[0027] Furthermore, the method of combining ion implantation with annealing is: The pn junction of a p-type silicon wafer solar cell is created using an ion implantation process of phosphorus.
[0028] Further, the method of combining the dopant slurry with annealing is: A slurry containing a phosphorus compound is applied to the front side of a p-type silicon wafer, and then a thermal diffusion process is used to drive phosphorus ions into the silicon lattice of the p-type silicon wafer.
[0029] Further, the method of combining the dopant slurry with laser enhancement to form a selective emitter is: A slurry containing phosphorus compounds is applied to the front side of a p-type silicon wafer, and then a laser excitation process is used to drive phosphorus ions into the silicon lattice of the p-type silicon wafer.
[0030] Furthermore, in step S203, the specific technical means of the dry aluminum oxide forming method include but are not limited to: atomic layer deposition (ALD), high temperature crucible evaporation, and electron beam scanning heating evaporation.
[0031] Furthermore, in step S204 and step S205, the specific technical means of the dry silicon nitride forming method include but are not limited to: plasma enhanced chemical vapor deposition PECVD process.
[0032] A passivated emitter and rear contact (PERC) solar cell device manufactured by the above-mentioned silicon-based solar cell manufacturing method based on the separation dry-wet process comprises: Lightly doped p-type silicon wafer; A textured surface formed on the front side (light incident side) of the p-type silicon wafer by a wet chemical textured surface manufacturing method in a wet process factory site, wherein the textured surface is used to achieve light enhancement (light capture); A phosphorus-doped emitter layer of a pn junction formed on the velvet surface using a dry emitter formation method that does not cause dopant deposition on the back side (back side or non-light-incident side) and edge of the silicon wafer at a dry process factory site; A back aluminum oxide layer is formed on the back side of the p-type silicon wafer using a dry aluminum oxide forming method in a dry process factory, wherein the back aluminum oxide layer serves as a passivation layer; A back silicon nitride layer formed on the back aluminum oxide layer using a dry silicon nitride forming method at a dry process factory site, wherein the back silicon nitride layer is used as a back silicon nitride layer of an anti-reflective coating and a protective layer on the back of a silicon wafer; A front silicon nitride layer is formed on the phosphorus-doped emitter layer of the pn junction using a dry silicon nitride forming method in a dry process factory, wherein the front silicon nitride layer serves as an anti-reflection coating and protective layer on the front side of the silicon wafer; A front metal electrode formed on the front silicon nitride layer by a screen printing process at a dry process factory site; A back metal electrode is formed on the back silicon nitride layer by a screen printing process in a dry process factory.
[0033] Compared with the prior art, the present invention has the following beneficial effects: The present invention proposes a new method for manufacturing silicon-based solar cell devices, which innovatively combines wet and dry processes separated at different factory locations, and can achieve no use of any wet process in the dry site, thereby significantly reducing chemical waste emissions in dry factories, metropolises or near where employees gather.
[0034] Furthermore, the series of dry processes subsequently adopted in the present invention will not cause borosilicate glass (BSG) or phosphosilicate glass (PSG) or other materials and coatings to be deposited at unnecessary locations on the wafer, thereby avoiding the step of removing borosilicate glass (BSG) or phosphosilicate glass (PSG) or other materials and coatings in the wet chemical process, thereby reducing the equipment and facility costs for large-scale, high-efficiency silicon-based solar cell manufacturing.
[0035] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. The specific implementation of the present invention is given in detail by the following embodiments and their accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings: Figure 1 The schematic diagram of the structure of the tunneling oxide passivation contact (TOPCon) solar cell device prepared by the present invention is shown.
[0037] Figure 2 The schematic diagram of the structure of the passivated emitter and rear contact (PERC) solar cell device prepared by the present invention. DETAILED DESCRIPTION
[0038] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings so that the purpose, features and advantages of the invention can be more clearly understood. It should be understood that the embodiments shown in the accompanying drawings are not intended to limit the scope of the present invention, but are only intended to illustrate the essential spirit of the technical solution of the present invention.
[0039] In the following description, certain specific details are set forth for the purpose of illustrating various disclosed embodiments to provide a thorough understanding of the various disclosed embodiments. However, those skilled in the relevant art will recognize that the embodiments may be practiced without one or more of these specific details. In other cases, well-known devices, structures, and techniques associated with the present application may not be shown or described in detail to avoid unnecessarily obscuring the description of the embodiments.
[0040] Unless the context requires otherwise, throughout the specification and claims, the word "comprise" and variations such as "include" and "have" should be construed in an open, inclusive sense, ie, should be interpreted as "including, but not limited to."
[0041] References throughout the specification to "one embodiment" or "an embodiment" indicate that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of "in one embodiment" or "in an embodiment" in various places throughout the specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any manner in one or more embodiments.
[0042] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. It should be noted that the term "or" is generally employed in its sense including "and / or" unless the context clearly dictates otherwise.
[0043] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. Example
[0044] See also Figure 1As shown, the present invention provides a method for manufacturing a tunnel oxide passivation contact (TOPCon) solar cell device based on a separated dry and wet process. The method adopts a separated dry and wet process and does not need to use a wet chemical process in a dry site to reduce the cost of manufacturing facilities. The specific steps are as follows: S101. In a wet process factory, a velvet surface 101 is formed on the front side (light incident side) of the n-type silicon wafer 100 by using a wet chemical velvet surface production method, thereby enhancing light absorption (light capture) and enhancing photogenerated carriers. Then, if necessary, a wet chemical polishing method is used to polish the back side of the n-type silicon wafer 100.
[0045] Texturing the surface of solar cells to enhance light absorption and efficiency is critical to improving energy conversion. The purpose of texturing is to minimize reflection and increase the amount of light captured in the solar cell, thereby maximizing energy output.
[0046] The wet chemical texturing method includes but is not limited to etching processes using various acid and / or alkaline solutions, for example, NaOH, KOH, H2O2, HF, HCl and other chemicals may be used for wet texturing treatment.
[0047] The wet chemical polishing method includes but is not limited to polishing processes using various alkaline solutions, for example, an alkaline solution may be used for polishing.
[0048] The wet process plant site can be selected in remote areas away from densely populated areas, and after the discharged chemicals are treated in an appropriate manner, the chemical emission standards in these areas can be met at low cost.
[0049] S102. Transferring the n-type silicon wafer after front-side texturing and back-side polishing to a dry process factory site, which is usually where many employees are located, or is usually located in or near a metropolitan area that is convenient for recruiting and placing workers.
[0050] In a dry process factory, a dry emitter formation method is used to form a pn junction boron-doped emitter layer 102 on the velvet surface 101 on the front side of an n-type silicon wafer 100; the dry emitter formation method does not cause deposition of dopants on the back side (back side or non-light incident side) and edge of the silicon wafer.
[0051] In this step, the pn junction is formed only on the front side of the solar cell, and no dopant that can form the pn junction is deposited on the back side or the edge of the solar cell. For TOPCon solar cells on n-type silicon wafers, the dopant that forms the pn junction is boron.
[0052] This dry emitter formation method of this step that does not require subsequent wet process can adopt five preferred processes: solid dopant thermal diffusion, PVD in-situ doping combined with annealing, ion implantation combined with annealing, dopant slurry combined with annealing, and dopant slurry combined with laser enhancement.
[0053] Unlike thermal diffusion of gaseous dopants, these dry emitter formation methods do not result in the formation of pn junctions on the back and edge of the silicon wafer, which must be removed by wet chemical etching or additional dry processes. The use of these dry emitter formation methods can be used to create pn junctions only on the front side of the silicon wafer without using wet chemical processes to remove the pn junctions on the back side of the silicon wafer. The method of combining dopant slurry with annealing is to use a slurry containing a boron compound to coat the front side of an n-type silicon wafer, and then use a thermal diffusion process to drive boron atoms into the silicon lattice of the n-type silicon wafer. Specifically, the compound containing the dopant is mixed into a slurry, and then it is printed on a selected area on the front side of the n-type silicon wafer, and finally the n-type silicon wafer coated with the slurry is placed in a high-temperature furnace to diffuse the dopant from the front side into the n-type silicon wafer, thereby forming a pn junction.
[0054] The method of combining the dopant slurry with laser enhancement is to use a slurry containing a boron compound to coat the front side of an n-type silicon wafer, and then use a laser excitation process to drive the boron atoms into the silicon lattice of the n-type silicon wafer. Specifically, the dopant-containing compound is mixed into a slurry, and then printed onto a selected area on the front side of the n-type silicon wafer, and then the n-type silicon wafer coated with the slurry is excited by a laser beam to diffuse the preferred dopant from the front side into the n-type silicon wafer, and finally placed in a high-temperature furnace to excite the preferred dopant, thereby forming a pn junction.
[0055] The method of combining ion implantation with annealing is to use a boron ion implantation process to create a pn junction of an n-type silicon wafer solar cell without causing dopants to be deposited on the back and edge of the n-type silicon wafer. Specifically, high-energy boron ions are implanted into the front of the n-type silicon wafer by ion implantation, and a high voltage bias is used to accelerate the ion implantation into the front surface of the n-type silicon wafer, and doping is generated near the interface of the front surface. The n-type silicon wafer is then placed in a high-temperature furnace to activate the dopant, thereby forming a pn junction. This method does not cause dopants to be deposited on the back and edge of the n-type silicon wafer.
[0056] S103. In a dry process factory, a dry silicon oxide (SiO2) formation method is used to form a 1.5-2 nm silicon oxide tunneling layer 103 on the back side of the n-type silicon wafer 100. The silicon oxide tunneling layer 103 is used as a passivation layer on the back side of the n-type silicon wafer 100 to achieve effective back side passivation and prevent hole carriers from diffusing into the back side electrode.
[0057] The dry silicon oxide formation method of this step which does not require a subsequent wet process can adopt the following five preferred processes: thermally growing a silicon oxide layer on a silicon wafer, growing a silicon oxide layer on a silicon wafer using radio frequency excited oxygen plasma, growing a silicon oxide layer on a silicon wafer using medium frequency excited oxygen plasma, growing a silicon oxide layer on a silicon wafer using ozone, and growing a silicon oxide layer on a silicon wafer using high temperature water vapor.
[0058] S104, in a dry process factory, using a dry polysilicon forming method, a heavily phosphorus-doped polysilicon layer 104 is formed on the silicon oxide tunneling layer 103 on the back of the n-type silicon wafer 100, wherein the heavily phosphorus-doped polysilicon layer 104 is used to enhance the back passivation of the n-type silicon wafer 100, form an ohmic contact, and generate a beneficial back electric field. The dry polysilicon forming method does not cause phosphorus to be deposited on the front and edge of the n-type silicon wafer 100.
[0059] The dry polysilicon forming method of this step which does not require a subsequent wet process can adopt a preferred process combining a physical vapor deposition process PVD in-situ phosphorus doping with thermal activation. The preferred process only deposits a phosphorus in-situ doped amorphous silicon layer on the back of the silicon wafer, and then uses a thermal annealing process to convert the deposited doped amorphous silicon film into a doped polysilicon film.
[0060] Unlike the LPCVD and PECVD processes commonly used to manufacture TOPCon solar cells, PVD-deposited phosphorus-doped silicon combined with thermal annealing and activation does not require subsequent wet processing to remove the PSG layer on the front side and the edge of the silicon wafer.
[0061] S105, in the dry process plant site, using dry alumina (AlO x ) forming method, forming a front aluminum oxide layer 106 on the boron-doped emitter layer 102 of the pn junction on the front side of the n-type silicon wafer 100, wherein the front aluminum oxide layer 106 is used for front passivation.
[0062] The dry aluminum oxide forming method in this step may adopt a preferred process such as atomic layer deposition (ALD), high temperature crucible evaporation, electron beam scanning heating evaporation, etc.
[0063] S106, in the dry process factory site, using dry silicon nitride (SiN x ) formation method, forming a front silicon nitride layer 107 on the front aluminum oxide layer 106 of the n-type silicon wafer 100, and the front silicon nitride layer 107 serves as an anti-reflection coating and protective layer on the front side of the n-type silicon wafer 100.
[0064] The dry silicon nitride forming method in this step may adopt a plasma enhanced chemical vapor deposition (PECVD) process.
[0065] S107, in the dry process factory site, using dry silicon nitride (SiN x ) formation method, forming a back side silicon nitride layer 105 on the heavily phosphorus-doped polysilicon layer 104 on the back side of the n-type silicon wafer 100, and the back side silicon nitride layer 105 serves as an anti-reflective coating and protective layer on the back side of the n-type silicon wafer 100.
[0066] The dry silicon nitride forming method in this step may adopt a plasma enhanced chemical vapor deposition (PECVD) process.
[0067] S108 . In a dry process factory, a front metal electrode 108 is formed on the front silicon nitride layer 107 of the n-type silicon wafer 100 , and a back metal electrode 109 is formed on the back silicon nitride layer 105 of the n-type silicon wafer 100 by using a screen printing process. Example
[0068] See also Figure 1 As shown, the present invention provides a tunneling oxide passivation contact (TOPCon) solar cell device manufactured by the method of Example 1, and its structure includes: Lightly doped n-type silicon wafer 100 .
[0069] The velvet surface 101 is formed on the front side (light incident side) of the n-type silicon wafer 100 by a wet chemical method for making a velvet surface in a wet process factory. The velvet surface 101 is used to achieve light enhancement (light capture). The wet chemical method for making a velvet surface is the same as that in Example 1. Then, if necessary, the back side of the n-type silicon wafer 100 is polished by a wet chemical polishing method. The wet chemical polishing method is the same as that in Example 1.
[0070] A boron-doped emitter layer 102 of a pn junction is formed on the velvet surface 101 in a dry process factory by using a dry emitter formation method that does not cause dopants to be deposited on the back side (back side or non-light-incident side) and edge of the silicon wafer. The dry emitter formation method is the same as the method in Example 1.
[0071] A silicon oxide tunneling layer 103 is formed on the back side of the n-type silicon wafer 100 by a dry silicon oxide forming method in a dry process factory. The silicon oxide tunneling layer 103 serves as a passivation layer and is used to prevent holes from diffusing into the back electrode. The dry silicon oxide forming method is the same as that in Example 1.
[0072] A heavily phosphorus-doped polysilicon layer 104 is formed on the silicon oxide tunneling layer 103 in a dry process factory using a dry polysilicon formation method that does not cause phosphorus deposition on the front and edge of the silicon wafer. The dry polysilicon formation method is the same as that in Example 1.
[0073] A front aluminum oxide layer 106 is formed on the boron-doped emitter layer 102 of the pn junction by a dry aluminum oxide forming method in a dry process factory. The front aluminum oxide layer 106 is used for front passivation. The dry aluminum oxide forming method is the same as that in Example 1.
[0074] A front silicon nitride layer 107 is formed on the front aluminum oxide layer 106 and a back silicon nitride layer 105 is formed on the heavily phosphorus-doped polysilicon layer 104 by a dry silicon nitride forming method in a dry process factory. The front silicon nitride layer 107 serves as an anti-reflection coating and protective layer on the front side of the silicon wafer, and the back silicon nitride layer 105 serves as an anti-reflection coating and protective layer on the back side of the silicon wafer. The dry silicon nitride forming method is the same as the method in Example 1.
[0075] A front metal electrode 108 is formed on the front silicon nitride layer 107 and a back metal electrode 109 is formed on the back silicon nitride layer 105 by screen printing in a dry process factory. Example
[0076] See also Figure 2 As shown, the present invention provides a method for manufacturing a passivated emitter and rear contact (PERC) solar cell device based on a separate dry and wet process. The method adopts a separate dry and wet process and does not need to use a wet chemical process in a dry site to reduce the cost of manufacturing facilities. The specific steps are as follows: S201, in a wet process factory, a velvet surface 201 is formed on the front side (light incident side) of the p-type silicon wafer 200 by using a wet chemical velvet surface production method, thereby enhancing light absorption (light capture) and enhancing photogenerated carriers. Then, if necessary, a wet chemical polishing method is used to polish the back side of the p-type silicon wafer 200.
[0077] The wet process plant site can be selected in remote areas away from densely populated areas, and after the discharged chemicals are treated in an appropriate manner, the chemical emission standards in these areas can be met at low cost.
[0078] The wet chemical method for making the suede surface and the wet chemical polishing method in this step are the same as those in Example 1.
[0079] S202. Transfer the p-type silicon wafer after front-side texturing and back-side polishing to a dry process factory site, which is usually where many employees are located, or is usually located in or near a metropolitan area that is convenient for recruiting and placing workers.
[0080] Then, in the dry process factory, a dry emitter formation method is used to form a pn junction phosphorus-doped emitter layer 202 on the velvet surface 201 on the front side of the p-type silicon wafer. The dry emitter formation method does not cause the deposition of dopants on the back side (back side or non-light-incident side) and edge of the silicon wafer.
[0081] In this step, the pn junction is formed only on the front side of the solar cell, and no dopant that can form the pn junction is deposited on the back side or the edge of the solar cell. For PERC solar cells on p-type silicon wafers, the dopant that forms the pn junction is phosphorus.
[0082] The dry emitter formation method of this step that does not require subsequent wet processes can adopt five preferred processes: solid dopant thermal diffusion, PVD in-situ doping combined with annealing, ion implantation combined with annealing, dopant slurry combined with annealing, and dopant slurry combined with laser enhanced formation of selective emitter (SE).
[0083] Unlike thermal diffusion of gaseous dopants, these dry emitter formation methods do not result in the formation of pn junctions on the back and edge of the silicon wafer, which must be removed by wet chemical etching or additional dry processes. The use of these dry emitter formation methods can be used to create pn junctions only on the front side of the silicon wafer without using wet chemical processes to remove the pn junctions on the back side of the silicon wafer. The method of combining dopant slurry with annealing is to use a slurry containing a phosphorus compound to coat the front side of a p-type silicon wafer, and then use a thermal diffusion process to drive phosphorus ions into the silicon lattice of the p-type silicon wafer. Specifically, the compound containing the dopant is mixed into a slurry, and then the slurry is printed on a selected area on the front side of the p-type silicon wafer, and finally the p-type silicon wafer coated with the slurry is placed in a high-temperature furnace to diffuse the dopant from the front side into the n-type silicon wafer, thereby forming a pn junction.
[0084] The method of combining the dopant slurry with laser enhancement to form a selective emitter is to use a slurry containing a phosphorus compound to coat the front side of a p-type silicon wafer, and then use a laser excitation process to drive the phosphorus ions into the silicon lattice of the p-type silicon wafer. Specifically, the dopant-containing compound is mixed into a slurry, and then printed onto a selected area on the front side of the p-type silicon wafer, and then the p-type silicon wafer coated with the slurry is excited by a laser beam to diffuse the preferred dopant from the front side into the p-type silicon wafer, and finally placed in a high-temperature furnace to excite the preferred dopant, thereby forming a pn junction.
[0085] The method of combining ion implantation with annealing is to use a phosphorus ion implantation process to create a pn junction of a p-type silicon wafer solar cell without causing dopants to be deposited on the back and edge of the p-type silicon wafer. Specifically, high-energy phosphorus ions are implanted into the front of the p-type silicon wafer by ion implantation, and the ion implantation is accelerated by a high voltage bias to the front surface of the p-type silicon wafer, and doping is generated near the interface of the front surface. The p-type silicon wafer is then placed in a high-temperature furnace to activate the dopant, thereby forming a pn junction. This method does not cause dopants to be deposited on the back and edge of the p-type silicon wafer.
[0086] S203, in the dry process plant site, using dry alumina (AlO x ) formation method, forming a back aluminum oxide layer 203 on the back side of the p-type silicon wafer 200, and the back aluminum oxide layer 203 serves as a passivation layer on the back side of the p-type silicon wafer 200.
[0087] The dry aluminum oxide forming method in this step may adopt a preferred process such as atomic layer deposition (ALD), high temperature crucible evaporation, electron beam scanning heating evaporation, etc.
[0088] S204, in the dry process factory site, using dry silicon nitride (SiN x ) formation method, directly forming a back silicon nitride layer 204 on the back aluminum oxide layer 203 of the p-type silicon wafer 200, and the back silicon nitride layer 204 serves as an anti-reflective coating and protective layer on the back of the p-type silicon wafer 200.
[0089] The dry silicon nitride forming method in this step may adopt a plasma enhanced chemical vapor deposition (PECVD) process.
[0090] S205, in the dry process factory site, using dry silicon nitride (SiN x ) formation method, directly forming a front silicon nitride layer 205 on the phosphorus-doped emitter layer 202 of the pn junction on the front side of the p-type silicon wafer 200, and the front silicon nitride layer 205 serves as an anti-reflection coating and protective layer on the front side of the p-type silicon wafer 200.
[0091] The dry silicon nitride forming method in this step may adopt a plasma enhanced chemical vapor deposition (PECVD) process.
[0092] S206 , in a dry process factory, using a screen printing process, forming a front metal electrode 206 on the front silicon nitride layer 205 of the p-type silicon wafer 200 , and forming a back metal electrode 207 on the back silicon nitride layer 204 of the p-type silicon wafer 200 . Example
[0093] See also Figure 2As shown, the present invention provides a passivated emitter and rear contact (PERC) solar cell device manufactured by the method of Example 3, and its structure includes: Lightly doped p-type silicon wafer 200 .
[0094] The velvet surface 201 is formed on the front side (light incident side) of the p-type silicon wafer 200 by a wet chemical method for making a velvet surface in a wet process factory. The velvet surface 201 is used to achieve light enhancement (light capture). The wet chemical method for making a velvet surface is the same as the method in Example 3. Then, if necessary, the back side of the p-type silicon wafer 200 is polished by a wet chemical polishing method. The wet chemical polishing method is the same as the method in Example 3.
[0095] A phosphorus-doped emitter layer 202 of a pn junction is formed on the velvet surface 201 by a dry emitter formation method that does not cause dopants to be deposited on the back side (back side or non-light-incident side) and edge of the silicon wafer in a dry process factory. The dry emitter formation method is the same as the method in Example 3.
[0096] A back aluminum oxide layer 203 is formed on the back side of the p-type silicon wafer 200 by a dry aluminum oxide forming method in a dry process factory. The back aluminum oxide layer 203 serves as a passivation layer. The dry aluminum oxide forming method is the same as that in Example 3.
[0097] A back silicon nitride layer 204 is formed on the back aluminum oxide layer 203 and a front silicon nitride layer 205 is formed on the phosphorus-doped emitter layer 202 of the pn junction by a dry silicon nitride forming method in a dry process factory. The back silicon nitride layer 204 is used as a back silicon nitride layer of an anti-reflective coating and a protective layer on the back of the p-type silicon wafer 200, and the front silicon nitride layer 205 is used as an anti-reflective coating and a protective layer on the front of the p-type silicon wafer 200. The dry silicon nitride forming method is the same as the method in Example 3.
[0098] A front metal electrode 206 is formed on the front silicon nitride layer 205 and a back metal electrode 207 is formed on the back silicon nitride layer 204 by screen printing process in a dry process factory.
[0099] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. A method for manufacturing a silicon-based solar cell based on a separation dry-wet process, characterized in that: The following steps are involved: S101, at a first factory site, i.e., a wet process factory site, using a wet chemical method to form a velvet surface on the front side of an n-type silicon wafer for enhancing light absorption, and then, if necessary, using a wet chemical polishing method to polish the back side of the n-type silicon wafer; S102, transferring the textured n-type silicon wafer to a second factory site, i.e., a dry process factory site, and using a dry emitter formation method to form a boron-doped emitter layer of a pn junction on the textured surface on the front side of the n-type silicon wafer; the dry emitter formation method will not cause deposition of dopants on the back side and edge of the silicon wafer; S103, using a dry silicon oxide forming method to form a silicon oxide tunneling layer on the back side of the n-type silicon wafer, which serves as a passivation layer and can prevent hole carriers from diffusing into the back electrode; S104, forming a polysilicon layer heavily doped with phosphorus on the silicon oxide tunneling layer on the back side of the n-type silicon wafer using a dry polysilicon forming method; the dry polysilicon forming method does not cause phosphorus to be deposited on the front side and edge of the n-type silicon wafer; S105, forming a front aluminum oxide layer for front passivation on the boron-doped emitter layer of the pn junction on the front side of the n-type silicon wafer by using a dry aluminum oxide forming method; S106, using a dry silicon nitride forming method to form a front silicon nitride layer on the front aluminum oxide layer of the n-type silicon wafer as a front anti-reflection coating and a protective layer of the silicon wafer; S107, using a dry silicon nitride forming method to form a back silicon nitride layer as an anti-reflective coating and protective layer on the back side of the silicon wafer on the heavily phosphorus-doped polysilicon layer on the back side of the n-type silicon wafer; S108, using a screen printing process to form a front metal electrode on the front silicon nitride layer of the n-type silicon wafer, and to form a back metal electrode on the back silicon nitride layer of the n-type silicon wafer.
2. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 1, characterized in that: In step S101, the specific technical means of the wet chemical method for making velvet include but are not limited to etching processes using various acids and / or alkaline solutions; the specific technical means of the wet chemical polishing method include but are not limited to polishing processes using various alkaline solutions.
3. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 1, characterized in that: In step S102, the dry emitter formation method is an emitter formation method that does not result in the deposition of a doping layer on the back and edge of the n-type silicon wafer, and its specific technical means include but are not limited to: solid dopant thermal diffusion, PVD in-situ doping combined with annealing, ion implantation combined with annealing, dopant slurry combined with annealing, and dopant slurry combined with laser enhancement.
4. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 3, characterized in that: The method of combining ion implantation with annealing is: Boron ion implantation is used to create the pn junction of an n-type silicon wafer solar cell.
5. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 3, characterized in that: The method of combining the dopant slurry with annealing is: A slurry containing a boron compound is applied to the front side of the n-type silicon wafer, and then a thermal diffusion process is used to drive boron atoms into the silicon lattice of the n-type silicon wafer.
6. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 3, characterized in that: The method of combining the dopant slurry with laser enhancement is: A slurry containing boron compounds is applied to the front side of an n-type silicon wafer, and then a laser-enhanced process is used to drive boron atoms into the silicon lattice of the n-type silicon wafer.
7. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 1, characterized in that: In step S103, the specific technical means of the dry silicon oxide formation method include but are not limited to: thermally growing a silicon oxide layer on a silicon wafer, growing a silicon oxide layer on a silicon wafer using radio frequency excited oxygen plasma, growing a silicon oxide layer on a silicon wafer using medium frequency excited oxygen plasma, growing a silicon oxide layer on a silicon wafer using ozone, and growing a silicon oxide layer on a silicon wafer using high temperature water vapor.
8. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 1, characterized in that: In step S104, the specific technical means of the dry polysilicon forming method include but are not limited to: combining PVD in-situ phosphorus doping with thermal activation.
9. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 1, characterized in that: In step S105, the specific technical means of the dry aluminum oxide forming method include but are not limited to: atomic layer deposition, high temperature crucible evaporation, and electron beam scanning heating evaporation.
10. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 1, characterized in that: In step S106 and step S107, the specific technical means of the dry silicon nitride forming method include but are not limited to: plasma enhanced chemical vapor deposition process, namely PECVD.
11. A tunneling oxide passivated contact solar cell device manufactured by the silicon-based solar cell manufacturing method based on the separation dry-wet process according to any one of claims 1 to 10, characterized in that: include: Lightly doped n-type silicon wafer; A textured surface formed on the front side of the n-type silicon wafer by a wet chemical textured surface manufacturing method in a wet process factory, wherein the textured surface is used to achieve light enhancement; A boron-doped emitter layer of a pn junction formed on the velvet surface using a dry emitter formation method that does not cause dopant deposition on the back and edge of the silicon wafer at a dry process factory site; A silicon oxide tunneling layer is formed on the back side of the n-type silicon wafer by a dry silicon oxide forming method in a dry process factory, wherein the silicon oxide tunneling layer serves as a passivation layer and is used to prevent hole carriers from diffusing into the back electrode; A heavily phosphorus-doped polysilicon layer formed on the silicon oxide tunneling layer in a dry process factory site using a dry polysilicon formation method that does not cause phosphorus to be deposited on the front and edge of the silicon wafer; A front aluminum oxide layer is formed on the boron-doped emitter layer of the pn junction using a dry aluminum oxide forming method at a dry process factory site, wherein the front aluminum oxide layer is used for front passivation; A front silicon nitride layer is formed on the front aluminum oxide layer using a dry silicon nitride forming method at a dry process factory site, wherein the front silicon nitride layer serves as an anti-reflection coating and protective layer on the front side of the silicon wafer; forming a back silicon nitride layer on the heavily phosphorus-doped polysilicon layer using a dry silicon nitride forming method at a dry process factory site, wherein the back silicon nitride layer serves as an anti-reflective coating and protective layer on the back side of the silicon wafer; A front metal electrode formed on the front silicon nitride layer by a screen printing process at a dry process factory site; A back metal electrode is formed on the back silicon nitride layer by a screen printing process in a dry process factory.
12. A method for manufacturing a silicon-based solar cell based on a separation dry-wet process, characterized in that: The following steps are involved: S201, at a first factory site, i.e., a wet process factory site, using a wet chemical method for making a velvet surface to form a velvet surface for enhancing light absorption on the front side of a p-type silicon wafer, and then, if necessary, using a wet chemical polishing method to polish the back side of the p-type silicon wafer; S202, transferring the textured p-type silicon wafer to a second factory site, i.e., a dry process factory site, and using a dry emitter formation method to form a phosphorus-doped emitter layer of a pn junction on the textured surface on the front side of the p-type silicon wafer; the dry emitter formation method will not cause deposition of dopants on the back side and edge of the p-type silicon wafer; S203, forming a back aluminum oxide layer as a passivation layer on the back side of the p-type silicon wafer by a dry aluminum oxide forming method; S204, using a dry silicon nitride forming method to form a back silicon nitride layer on the back aluminum oxide layer of the p-type silicon wafer as a back anti-reflection coating and protective layer on the back of the silicon wafer; S205, using a dry silicon nitride forming method to form a front silicon nitride layer as a front anti-reflection coating and a protective layer of the silicon wafer on the phosphorus-doped emitter layer of the pn junction on the front side of the p-type silicon wafer; S206, using a screen printing process to form a front metal electrode on the front silicon nitride layer of the p-type silicon wafer, and to form a back metal electrode on the back silicon nitride layer of the p-type silicon wafer.
13. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 12, characterized in that: In step S201, the specific technical means of the wet chemical method for making velvet include but are not limited to etching processes using various acids and / or alkaline solutions; the specific technical means of the wet chemical polishing method include but are not limited to polishing processes using various alkaline solutions.
14. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 12, characterized in that: In step S202, the dry emitter formation method is an emitter formation method that does not cause deposition of dopants on the back and edge of the p-type silicon wafer, and its specific technical means include but are not limited to: solid dopant thermal diffusion, PVD in-situ doping combined with annealing, ion implantation combined with annealing, dopant slurry combined with annealing, and dopant slurry combined with laser enhancement to form a selective emitter.
15. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 14, characterized in that: The method of combining ion implantation with annealing is: The pn junction of a p-type silicon wafer solar cell is created using an ion implantation process of phosphorus.
16. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 14, characterized in that: The method of combining the dopant slurry with annealing is: A slurry containing a phosphorus compound is applied to the front side of a p-type silicon wafer, and then a thermal diffusion process is used to drive phosphorus ions into the silicon lattice of the p-type silicon wafer.
17. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 14, characterized in that: The method of combining the dopant slurry with laser enhancement to form a selective emitter is: A slurry containing phosphorus compounds is applied to the front side of a p-type silicon wafer, and then a laser excitation process is used to drive phosphorus ions into the silicon lattice of the p-type silicon wafer.
18. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 12, characterized in that: In step S203, the specific technical means of the dry aluminum oxide forming method include but are not limited to: atomic layer deposition, high temperature crucible evaporation, and electron beam scanning heating evaporation.
19. The method for manufacturing a silicon-based solar cell based on a separation dry-wet process according to claim 12, characterized in that: In step S204 and step S205, the specific technical means of the dry silicon nitride forming method include but are not limited to: plasma enhanced chemical vapor deposition process, namely PECVD.
20. A passivated emitter and back contact solar cell device manufactured by the silicon-based solar cell manufacturing method based on the separation dry-wet process according to any one of claims 12 to 19, characterized in that: include: Lightly doped p-type silicon wafer; A textured surface is formed on the front side of the p-type silicon wafer using a wet chemical textured surface manufacturing method at a wet process factory site, wherein the textured surface is used to achieve light enhancement. A phosphorus-doped emitter layer of a pn junction is formed on the velvet surface by using a dry emitter formation method that does not cause dopant deposition on the back and edge of the silicon wafer in a dry process factory site; A back aluminum oxide layer is formed on the back side of the p-type silicon wafer using a dry aluminum oxide forming method in a dry process factory, wherein the back aluminum oxide layer serves as a passivation layer; A back silicon nitride layer formed on the back aluminum oxide layer using a dry silicon nitride forming method at a dry process factory site, wherein the back silicon nitride layer is used as a back silicon nitride layer of an anti-reflective coating and a protective layer on the back of a silicon wafer; A front silicon nitride layer is formed on the phosphorus-doped emitter layer of the pn junction using a dry silicon nitride forming method in a dry process factory, wherein the front silicon nitride layer serves as an anti-reflection coating and protective layer on the front side of the silicon wafer; A front metal electrode formed on the front silicon nitride layer by a screen printing process at a dry process factory site; A back metal electrode is formed on the back silicon nitride layer by a screen printing process in a dry process factory.