LED light source, preparation method thereof and high-partition television backlight module

Abstract

The invention relates to the technical field of display, in particular to an LED light source and a preparation method thereof and a high-partition television backlight module, the LED light source comprises a substrate, a blue light chip and a filter film, the blue light chip is fixedly arranged on the substrate, and the blue light chip is electrically connected with the substrate; the light filtering film is fixedly arranged on the blue light chip, the light filtering film contains organic silicon microspheres which are uniformly dispersed, and the organic silicon microspheres can scatter light of the blue light chip; and a fluorescent powder layer and a sulfur-resistant waterproof layer are sequentially covered on the blue light chip. The light-emitting angle of the LED light source can be increased, the chip design and packaging difficulty is low, and the production cost can be effectively reduced.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an LED light source and a preparation method thereof, and a high-partition television backlight module. Background Art

[0002] With the development of technology, the application fields of LED devices are becoming more and more extensive. In the field of LCD+LED backlight, the luminous performance and luminous uniformity of LED backlight modules are crucial. Adding HDR through local dimming regional dimming technology can significantly enhance consumers' higher viewing experience. Regional dimming means multiple lights in one area and one light in one area. Therefore, the larger the light output angle of the LED, the greater the number of LED areas can be reduced, thereby reducing the cost of the backlight module.

[0003] In the prior art, the angle of light emission is increased by convex cup design, but the convex cup structure is more complicated than the traditional planar structure, and the shape, size and position of the convex cup need to be precisely controlled during the packaging process, which increases the difficulty and cost of manufacturing. At the same time, the complex structure may also lead to a decrease in the yield during the packaging process. In addition, the shape and position of the convex cup may affect the propagation path and distribution of light, so accurate optical simulation and optimization are required during the design to ensure that the optical performance of the LED reaches the expected goal, which increases the complexity and cost of the design. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art. The present invention provides an LED light source which has a larger light-emitting angle and is easy to manufacture and design, thereby effectively reducing production costs.

[0005] In order to solve the above problems, the present invention proposes an LED light source, comprising a substrate, a blue light chip and a filter film, wherein the blue light chip is fixedly placed on the substrate, and the blue light chip is electrically connected to the substrate;

[0006] The filter film is fixedly placed on the blue light chip, and the filter film contains uniformly dispersed organic silicon microspheres, which can scatter the light of the blue light chip;

[0007] The blue light chip is also covered with a phosphor layer and an anti-sulfur and waterproof layer in sequence.

[0008] As an improvement of the above technical solution, the organosilicon microspheres are loaded with zinc oxide, and the zinc oxide loaded on the organosilicon microspheres has a flower-like structure.

[0009] As an improvement of the above technical solution, the organosilicon microspheres loaded with zinc oxide are made from the following raw materials:

[0010]

[0011] The corresponding relationship between parts by weight and parts by volume is g / ml.

[0012] As an improvement of the above technical solution, the organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0013] Step A, mixing 250-600 parts by weight of organosilicon microspheres, 500-750 parts by weight of zinc acetate, 400-600 parts by weight of sodium citrate, 50-80 parts by weight of PEG-PPG-PEG and 350-600 parts by volume of deionized water, heating to 35-45° C. and stirring for 1-2 hours to obtain a first mixture;

[0014] Step B, adding 800-1400 parts by weight of hexamethylenetetramine to the first mixture, and stirring evenly to obtain a second mixture;

[0015] Step C, reacting the second mixture at 100-150 MPa and 90-100° C. for 6-10 hours, then aging at 75-85° C. for 3.5-5 hours, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0016] As an improvement of the above technical solution, the weight ratio of the silicone microspheres to the zinc acetate is (2-3):5.

[0017] As an improvement of the above technical solution, the refractive index of the anti-sulfur and waterproof layer is 1.2-1.5, and the thickness is 80-120 μm;

[0018] The thickness of the phosphor layer is 125-175 μm;

[0019] The transparency of the filter film is 20-60%, and the thickness is 50-70 μm. The diameter of the organic silicon microsphere is 1-3 μm.

[0020] As an improvement of the above technical solution, the material of the anti-sulfur and waterproof layer is phenyl-based organic silica gel.

[0021] As an improvement of the above technical solution, the filter film is made by the following method:

[0022] Step (1), mixing the organic silicon microspheres and the LED encapsulation adhesive in a mass ratio of (3-6):10000, and stirring evenly to obtain an encapsulation adhesive mixture;

[0023] Step (2), molding the packaging glue mixture in an environment of 0.9 KPa-1.5 KPa and a temperature of 100-150° C. to obtain the filter film.

[0024] Accordingly, the present invention also provides a method for preparing the above-mentioned LED light source, comprising the following steps:

[0025] S1, placing a plurality of blue light chips on the substrate;

[0026] S2, fixing the filter film containing silicone microspheres on the blue light chip;

[0027] S3, on the blue light chip with the filter film, using phosphor to perform molding to form a phosphor layer, and then cutting the phosphor layers on two adjacent blue light chips at a predetermined interval to form a CSP structure;

[0028] S4, forming an anti-sulfur and waterproof layer on the phosphor layer by molding, and then cutting the anti-sulfur and waterproof layers on two adjacent blue light chips at a predetermined interval to obtain an LED light source with a DCSP packaging structure.

[0029] Correspondingly, a high-partition television backlight module is also provided, comprising the LED light source described above.

[0030] The implementation of the present invention has the following beneficial effects:

[0031] Organic silicon microspheres are mixed in the LED packaging glue, and are molded on the blue light chip to form a filter film; the organic silicon microspheres can change the refractive index of the filter film, and the organic silicon microspheres can scatter light to a certain extent. In addition, the blue light chip, the filter film, the phosphor layer and the anti-sulfur waterproof layer constitute a DCSP packaging structure, and the anti-sulfur waterproof layer has the characteristics of a high refractive index to form a large-angle emitting CSP LED, thereby greatly improving the light output angle, and compared with the convex cup structure, the design difficulty and manufacturing difficulty of the present invention are lower, which can greatly reduce the manufacturing cost of the LED light source. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of an LED light source according to an embodiment of the present invention;

[0033] Figure 2 1 is a light pattern diagram of the LED light source of the first embodiment, the second embodiment and the third embodiment of the present invention;

[0034] Figure 3 It is a schematic diagram of brightness distribution of the LED light source according to the first embodiment of the present invention. DETAILED DESCRIPTION

[0035] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings.

[0036] See also Figure 1As shown, an embodiment of the present invention provides an LED light source, comprising a substrate 1, a blue light chip 2 and a filter film 3, wherein the blue light chip 2 is fixedly placed on the substrate 1, and the blue light chip 2 is electrically connected to the substrate 1;

[0037] The filter film 3 is fixedly placed on the blue light chip 2, and the filter film 3 contains uniformly dispersed organic silicon microspheres 31, and the organic silicon microspheres 31 can scatter the light of the blue light chip 2;

[0038] The blue light chip is also covered with a phosphor layer 4 and an anti-sulfur and waterproof layer 5 in sequence.

[0039] Organic silicon microspheres 31 are mixed in the LED packaging glue, and are molded on the blue light chip 2 to form a filter film 3; the organic silicon microspheres 31 can scatter light to a certain extent, thereby increasing the light output angle of the blue light chip 2. In addition, the blue light chip 2, the filter film 3, the phosphor layer 4 and the anti-sulfur waterproof layer 5 constitute a DCSP packaging structure, and the anti-sulfur waterproof layer 5 has the characteristics of a high refractive index to form a large-angle light-emitting CSP LED, thereby greatly improving the light output angle. Compared with the convex cup structure, the design difficulty and manufacturing difficulty of the present invention are lower, and the manufacturing cost of the LED light source can be greatly reduced.

[0040] Preferably, the organosilicon microspheres are loaded with zinc oxide, and the zinc oxide loaded on the organosilicon microspheres has a flower-like structure. The light output angle of the LED light source depends on the refractive index difference between the chip and the packaging material. The greater the refractive index difference between the two, the smaller the light output angle. ZnO has the characteristics of high refractive index. Loading ZnO on organosilicon microspheres can increase the refractive index of the filter film, thereby reducing the refractive index difference and increasing the light output angle of the LED light source. Furthermore, the zinc oxide with a flower-like structure on the surface of the organosilicon microspheres can increase the refraction angle of light. Finally, the presence of zinc oxide can improve the light transmittance and anti-ultraviolet aging ability of the filter film.

[0041] Specifically, the organosilicon microspheres loaded with zinc oxide are made from the following raw materials:

[0042]

[0043] Hexamethylenetetramine 800-1400 parts by weight

[0044] The corresponding relationship between parts by weight and parts by volume is g / ml.

[0045] The organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0046] Step A, mixing 250-600 parts by weight of organosilicon microspheres, 500-750 parts by weight of zinc acetate, 400-600 parts by weight of sodium citrate, 50-80 parts by weight of PEG-PPG-PEG and 350-600 parts by volume of deionized water, heating to 35-45° C. and stirring for 1-2 hours to obtain a first mixture;

[0047] Step B, adding 800-1400 parts by weight of hexamethylenetetramine to the first mixture, and stirring evenly to obtain a second mixture;

[0048] Step C, reacting the second mixture at 100-150 MPa and 90-100° C. for 6-10 hours, then aging at 75-85° C. for 3.5-5 hours, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0049] The optimal weight ratio of the organic silicon microspheres to the zinc acetate is (2-3):5. Zinc acetate is used as a zinc source, and the weight ratio of the organic silicon microspheres to the zinc acetate needs to be controlled. When the weight ratio of the above substances is greater than 3:5, there are too many organic silicon microspheres, resulting in too little zinc source so that the zinc oxide layer cannot be coated on the surface of the organic silicon microspheres; when the weight ratio of the above substances is less than 2:5, there are too many zinc sources, resulting in the overall easy agglomeration, which will affect the light transmittance of the filter film after production.

[0050] Specifically, the filter film is prepared by the following method:

[0051] Step (1), mixing the organic silicon microspheres and the LED encapsulation adhesive in a mass ratio of (3-6):10000, and stirring evenly to obtain an encapsulation adhesive mixture;

[0052] Step (2), molding the packaging glue mixture in an environment of 0.9 KPa-1.5 KPa and a temperature of 100-150° C. to obtain the filter film.

[0053] The LED encapsulation adhesive and the silicone microspheres of this embodiment are mixed and dispersed in proportion, and molded into a 60μm±10μm translucent white filter film with a size of 150*70mm after molding under predetermined conditions; then cut and decomposed into sizes suitable for chip sizes.

[0054] Preferably, the refractive index of the anti-sulfur and waterproof layer is 1.2-1.5, and the thickness is 80-120 μm; the thickness of the phosphor layer is 125-175 μm; the transparency of the filter film is 20-60%, and its thickness is 50-70 μm, and the diameter of the silicone microsphere is 1-3 μm. The present invention can select filter films of different transparency according to the actual design structure of the product, that is, the light output of the blue light chip, the thickness of the high color gamut layer, and the refractive index of the high color gamut anti-sulfur and waterproof protective layer.

[0055] Preferably, the thickness of the filter film 3 is 50-70 μm. When the thickness of the filter film 3 is less than 50 μm, the filter film 3 is too thin, which increases the difficulty of molding the filter film 3 and weakens the light dispersion performance, affecting the light output angle of the LED light source. When the thickness of the filter film 3 is greater than 70 μm, the filter film 3 is too thick and affects the transmittance. Preferably, the thickness of the filter film 3 is 60 μm.

[0056] Preferably, the material of the anti-sulfur waterproof layer is phenyl-based organic silica gel. Phenyl-based organic silica gel is a product obtained by introducing methylphenylsiloxane chain segments or diphenylsiloxane chain segments into the molecular chain of methylvinyl silicone rubber. The anti-sulfur waterproof layer made of it has the characteristics of high color gamut and high refractive index, and can effectively protect the phosphor layer, avoiding the problem of light decay caused by hydrolysis of the phosphor layer in a high humidity and high temperature environment. Optimally, the anti-sulfur waterproof layer is molded by phenylbutyl silicone resin. After molding, the hardness of the anti-sulfur waterproof protective layer is shore D70.

[0057] Accordingly, the present invention also provides a method for preparing an LED light source, comprising the following steps:

[0058] S1, placing a plurality of blue light chips on the substrate;

[0059] S2, fixing the filter film containing silicone microspheres on the blue light chip;

[0060] S3, on the blue light chip with the filter film, using phosphor to perform molding to form a phosphor layer, and then cutting the phosphor layers on two adjacent blue light chips at a predetermined interval to form a CSP structure;

[0061] S4, forming an anti-sulfur and waterproof layer on the phosphor layer by molding, and then cutting the anti-sulfur and waterproof layers on two adjacent blue light chips at a predetermined interval to obtain an LED light source with a DCSP packaging structure.

[0062] Specifically, on the blue light chip with filter film attached, phosphor is molded to form a phosphor layer, namely CSP structure. Since the product is in a high temperature and high humidity environment during actual use, the phosphor layer is easily hydrolyzed and causes light decay. Therefore, an anti-sulfur and waterproof layer is formed on the phosphor layer by molding, that is, double-layer molding is performed simultaneously to form a DCSP packaging structure. It not only protects the phosphor layer, but also has the characteristics of high refractive index, which helps to diffuse light to form a large-angle emitting CSP LED.

[0063] The blue light chip, under the combined effect of the filter film and the high-color-gamut anti-sulfur and waterproof protective layer with high refractive index characteristics, will form a double-layer CSP LED with large-angle light emission. It can have high reliability in high humidity and high temperature environments, and can also be used in the field of high-partition local dimming TV backlight.

[0064] Correspondingly, an embodiment of the present invention further provides a high-partition TV backlight module, including the LED light source described above. The LED light source in the present invention is a light-emitting structure of a DCSP packaging structure, which has a large-angle light-emitting effect, and thus a high-partition TV backlight module that can achieve a large-angle light-emitting effect of 150° or more is prepared.

[0065] Embodiment 1

[0066] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm and a transparency of 20%. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0067] Embodiment 2

[0068] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm and a transparency of 40%. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0069] Embodiment 3

[0070] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm and a transparency of 60%. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0071] The filter films prepared in Examples 1 to 3 are used in the following method for preparing an LED light source. The LED light source is prepared by the following method:

[0072] S1, welding multiple blue light chips on the substrate;

[0073] S2. A filter film containing silicone microspheres is fixed on the blue light chip that has been welded to the substrate;

[0074] S3, on the blue light chip with the filter film, using phosphor to perform molding to form a phosphor layer, and then cutting the phosphor layers on two adjacent blue light chips at a predetermined interval to form a CSP structure, and the glue edge width of the obtained phosphor layer is 150 μm;

[0075] S4. Form an anti-sulfur and waterproof layer on the phosphor layer by molding, and then cut the anti-sulfur and waterproof layers on two adjacent blue light chips at a predetermined interval to obtain an LED light source with a DCSP packaging structure, and the thickness of the high color gamut anti-sulfur and waterproof protective layer is 100 μm.

[0076] The LED light source using the filter films of embodiments 1 to 3, and its light pattern diagram is shown in FIG. Figure 2 As shown, the light output angle of the first embodiment is 165°, the light output angle of the second embodiment is 163°, and the light output angle of the third embodiment is 163°. It can be seen from the figure that the LED light source provided by the present invention is a large-angle DCSP light-emitting device.

[0077] Also, see Figure 3 As shown, the present invention forms a double-layer CSP LED with large-angle light emission under the combined action of the filter film and the high-color gamut waterproof protective layer with high refractive index characteristics. This structure has high reliability when working in high-temperature and high-humidity environments, and is also suitable for the field of high-partition local dimming TV backlights. Compared with the convex cup structure in the prior art, the design difficulty and manufacturing difficulty of the LED light source structure are greatly reduced, effectively reducing production costs.

[0078] Embodiment 4

[0079] The organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0080] Step A, 300 parts by weight of organosilicon microspheres, 600 parts by weight of zinc acetate, 450 parts by weight of sodium citrate, 75 parts by weight of PEG-PPG-PEG and 400 parts by volume of deionized water were mixed, and the mixture was heated to 40° C. and stirred for 1.5 hours to obtain a first mixture;

[0081] Step B, adding 1000 parts by weight of hexamethylenetetramine to the first mixture, and stirring to obtain a second mixture;

[0082] Step C: reacting the second mixture at 125 MPa and 100° C. for 10 h, then aging at 80° C. for 4 h, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0083] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0084] Embodiment 5

[0085] The organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0086] Step A, 300 parts by weight of organosilicon microspheres, 750 parts by weight of zinc acetate, 450 parts by weight of sodium citrate, 75 parts by weight of PEG-PPG-PEG and 400 parts by volume of deionized water were mixed, and the mixture was heated to 40° C. and stirred for 1.5 hours to obtain a first mixture;

[0087] Step B, adding 1000 parts by weight of hexamethylenetetramine to the first mixture, and stirring to obtain a second mixture;

[0088] Step C: reacting the second mixture at 125 MPa and 100° C. for 10 h, then aging at 80° C. for 4 h, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0089] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0090] Embodiment 6

[0091] The organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0092] Step A, 300 parts by weight of organosilicon microspheres, 500 parts by weight of zinc acetate, 450 parts by weight of sodium citrate, 75 parts by weight of PEG-PPG-PEG and 400 parts by volume of deionized water were mixed, and the mixture was heated to 40° C. and stirred for 1.5 hours to obtain a first mixture;

[0093] Step B, adding 1000 parts by weight of hexamethylenetetramine to the first mixture, and stirring to obtain a second mixture;

[0094] Step C: reacting the second mixture at 125 MPa and 100° C. for 10 h, then aging at 80° C. for 4 h, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0095] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0096] Embodiment 7

[0097] The organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0098] Step A, 250 parts by weight of organosilicon microspheres, 750 parts by weight of zinc acetate, 450 parts by weight of sodium citrate, 75 parts by weight of PEG-PPG-PEG and 400 parts by volume of deionized water were mixed, and the mixture was heated to 40° C. and stirred for 1.5 hours to obtain a first mixture;

[0099] Step B, adding 1000 parts by weight of hexamethylenetetramine to the first mixture, and stirring to obtain a second mixture;

[0100] Step C: reacting the second mixture at 125 MPa and 100° C. for 10 h, then aging at 80° C. for 4 h, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0101] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0102] Embodiment 8

[0103] The organosilicon microspheres loaded with zinc oxide are prepared by the following method:

[0104] Step A, 500 parts by weight of organosilicon microspheres, 750 parts by weight of zinc acetate, 450 parts by weight of sodium citrate, 75 parts by weight of PEG-PPG-PEG and 400 parts by volume of deionized water are mixed, and the mixture is heated to 40° C. and stirred for 1.5 hours to obtain a first mixture;

[0105] Step B, adding 1000 parts by weight of hexamethylenetetramine to the first mixture, and stirring to obtain a second mixture;

[0106] Step C: reacting the second mixture at 125 MPa and 100° C. for 10 h, then aging at 80° C. for 4 h, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

[0107] The organic silicon microspheres and LED encapsulation glue are mixed and stirred at a mass ratio of 4:10000, so that the organic silicon microspheres are evenly dispersed in the LED encapsulation glue to obtain an encapsulation glue mixture; the encapsulation glue mixture is molded at 1.0Kpa and a temperature of 125°C to obtain a translucent white filter film with a thickness of 60μm. The size of the molded filter film is 150*70mm, and then it is cut and decomposed into sizes suitable for the chip size.

[0108] The filter films prepared in Examples 4 to 8 were used to prepare the following LED light sources.

[0109] The LED light source is prepared by the following method:

[0110] S1, welding multiple blue light chips on the substrate;

[0111] S2. A filter film containing silicone microspheres is fixed on the blue light chip that has been welded to the substrate;

[0112] S3, on the blue light chip with the filter film, using phosphor to perform molding to form a phosphor layer, and then cutting the phosphor layers on two adjacent blue light chips at a predetermined interval to form a CSP structure, and the glue edge width of the obtained phosphor layer is 150 μm;

[0113] S4. Form an anti-sulfur and waterproof layer on the phosphor layer by molding, and then cut the anti-sulfur and waterproof layers on two adjacent blue light chips at a predetermined interval to obtain an LED light source with a DCSP packaging structure, and the thickness of the high color gamut anti-sulfur and waterproof protective layer is 100 μm.

[0114] The LED light source using the filter films of the fourth to sixth embodiments has a light output angle of 170°. The LED light source using the filter films of the seventh to eighth embodiments has a light output angle of 160° and 155° respectively.

[0115] The above is a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. An LED light source, characterized in that: It includes a substrate, a blue light chip and a filter film, wherein the blue light chip is fixedly placed on the substrate, and the blue light chip is electrically connected to the substrate; The filter film is fixedly placed on the blue light chip, and the filter film contains uniformly dispersed organic silicon microspheres, which can scatter the light of the blue light chip; The blue light chip is also covered with a phosphor layer and an anti-sulfur and waterproof layer in sequence.

2. The LED light source according to claim 1, characterized in that: The organosilicon microspheres are loaded with zinc oxide, and the zinc oxide loaded on the organosilicon microspheres has a flower-like structure.

3. The LED light source according to claim 2, characterized in that: The organosilicon microspheres loaded with zinc oxide are made from the following raw materials: The corresponding relationship between parts by weight and parts by volume is g / ml.

4. The LED light source according to claim 3, characterized in that: The organosilicon microspheres loaded with zinc oxide are prepared by the following method: Step A, mixing 250-600 parts by weight of organosilicon microspheres, 500-750 parts by weight of zinc acetate, 400-600 parts by weight of sodium citrate, 50-80 parts by weight of PEG-PPG-PEG and 350-600 parts by volume of deionized water, heating to 35-45° C. and stirring for 1-2 hours to obtain a first mixture; Step B, adding 800-1400 parts by weight of hexamethylenetetramine to the first mixture, and stirring evenly to obtain a second mixture; Step C, reacting the second mixture at 100-150 MPa and 90-100° C. for 6-10 hours, then aging at 75-85° C. for 3.5-5 hours, and cooling to obtain the organosilicon microspheres loaded with zinc oxide.

5. The LED light source according to claim 3, characterized in that: The weight ratio of the organic silicon microspheres to the zinc acetate is (2-3):

5.

6. The LED light source according to claim 1, characterized in that: The anti-sulfur waterproof layer has a refractive index of 1.2-1.5 and a thickness of 80-120 μm; The thickness of the phosphor layer is 125-175 μm; The transparency of the filter film is 20-60%, and the thickness is 50-70 μm. The diameter of the organic silicon microsphere is 1-3 μm.

7. The LED light source according to claim 1, characterized in that: The material of the anti-sulfur waterproof layer is phenyl-based organic silica gel.

8. The LED light source according to claim 1, characterized in that: The filter film is prepared by the following method: Step (1), mixing the organic silicon microspheres and the LED encapsulation adhesive in a mass ratio of (3-6):10000, and stirring evenly to obtain an encapsulation adhesive mixture; Step (2), molding the packaging glue mixture in an environment of 0.9 KPa-1.5 KPa and a temperature of 100-150° C. to obtain the filter film.

9. A method for preparing an LED light source according to any one of claims 1 to 8, characterized in that: The following steps are involved: S1, placing a plurality of blue light chips on the substrate; S2, fixing the filter film containing silicone microspheres on the blue light chip; S3, on the blue light chip with the filter film, using phosphor to perform molding to form a phosphor layer, and then cutting the phosphor layers on two adjacent blue light chips at a predetermined interval to form a CSP structure; S4, forming an anti-sulfur and waterproof layer on the phosphor layer by molding, and then cutting the anti-sulfur and waterproof layers on two adjacent blue light chips at a predetermined interval to obtain an LED light source with a DCSP packaging structure.

10. A high-partition TV backlight module, characterized in that: It comprises the LED light source as described in any one of claims 1 to 8.

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