High-parameter controllable radio frequency superconducting quantum interference device and preparation method

Abstract

The invention discloses a high-parameter controllable radio frequency superconducting quantum interference device which comprises an SQUID chip, a first substrate and a superconducting thin film material epitaxially growing on the first substrate, a first ring hole is formed in the superconducting thin film material, a micro-bridge structure is arranged on one side of the ring hole, and a first gap is formed in the outer side of a micro-bridge; the superconducting thin film material epitaxially grows on the second substrate, a second ring hole is formed in the superconducting thin film material, and one side of the second ring hole is opened to form a second gap. The SQUID chip and the dielectric resonator are bonded and packaged face to face in an inverted mode, the center position of the first ring hole is opposite to the center position of the second ring hole, and the angle difference between the extending direction of the first gap and the extending direction of the second gap is 90 degrees. Irradiation ions of the micro-bridge structure form a Josephson junction. The invention also discloses a preparation method of the high-parameter controllable radio frequency superconducting quantum interference device. The invention aims to solve the problems of poor controllability and low yield of step junction type rf SQUID junction parameters in the prior art.

Description

Technical Field

[0001] The present application relates to the technical field of superconducting quantum chips, and in particular to a high-parameter controllable radio frequency superconducting quantum interference device and a preparation method thereof. Background Art

[0002] Superconducting quantum interference device (SQUID) is an extremely sensitive magnetic detection device. -15 T) level magnetic field detection capability, and has a quantized periodic response to the input electromagnetic signal (magnetic flux quantum φ0 = h / 2e), so in the field of quantum electrical metrology, SQUID technology has been combined to develop voltmeters in quantum voltage applications, low-temperature current comparators in resistance bridges, and key circuit elements in quantum electrical triangle verification. In addition, the ability of SQUID devices to detect weak electromagnetic signals is six orders of magnitude higher than the sensitivity of junction field effect transistor amplifiers, so SQUID technology has also shown excellent application potential as a low-temperature noise thermometer in low-temperature temperature metrology.

[0003] As a key element in metrology, SQUID technology is constantly developing. Compared with direct current SQUID (dc SQUID), radio frequency SQUID (rf SQUID) is a SQUID device with simpler preparation and stronger practicality. Due to the progress of preparation technology, compared with low-temperature SQUID working in liquid helium temperature zone, high-temperature superconducting SQUID working in liquid nitrogen temperature zone can still provide sufficient low-frequency magnetic field detection sensitivity, and at the same time has the advantages of faster response speed, large working bandwidth, strong mobility, etc., and has broad application prospects in the development of mobile quantum electrical metrology equipment. At present, the superconducting Josephson junction of high-temperature superconducting rf SQUID is generally prepared based on step junction technology. Due to the complex preparation process of step junction, it is necessary to first prepare a precursor substrate with a specific angle step by micro-nano processing and etching, and then epitaxially grow superconducting thin film materials on it. The preparation process of epitaxially growing YBCO thin film on the grain boundary of artificial step structure to form a weak connection between grain boundaries is extremely dependent on the microstructure of the precursor substrate, which greatly reduces the reliability of controlling the junction parameters by using the junction preparation process. Due to the low device yield, it is currently difficult to become a practical solution for the preparation of a large number of high-performance and high-magnetic field-sensitive SQUID devices. The difficulty in controlling the junction parameters is the main reason for the low yield of high-performance and high-temperature rf SQUID devices. Therefore, achieving high yield and good consistency of device preparation is of great significance for the application of rf SQUID in the field of metrology. Summary of the invention

[0004] The present application proposes a high-parameter controllable radio frequency superconducting quantum interference device and a preparation method, which solves the problems of poor controllability of step junction type rf SQUID junction parameters and low yield in the prior art.

[0005] The present application provides a highly parameter controllable radio frequency superconducting quantum interference device, including:

[0006] The SQUID chip comprises a first substrate and a superconducting thin film material epitaxially grown thereon, a first ring hole is arranged on the superconducting thin film material, a microbridge structure is arranged on one side of the ring hole, and a first gap extending away from the first ring hole is arranged on the outer side of the microbridge;

[0007] The dielectric resonator comprises a second substrate and a superconducting thin film material epitaxially grown thereon, a second annular hole is arranged on the superconducting thin film material, and one side of the second annular hole is opened to form a second gap extending in a direction away from the second annular hole;

[0008] The SQUID chip and the dielectric resonator are face-to-face bonded and packaged in a flip-chip manner, the first ring hole and the second ring hole are located at opposite centers, and the first gap and the second gap extend in directions with an angle of 90 degrees different from each other;

[0009] The microbridge structure irradiates ions to form a Josephson junction.

[0010] In the embodiments of the present application, preferably, the substrate material is LaAlO3, MgO, SrTiO3 or a sapphire substrate.

[0011] Preferably, the superconducting thin film material is YBa2Cu3O 7-d 、Bi2Sr2CaCu2O d Or other copper oxide high temperature superconducting materials.

[0012] In the embodiments of the present application, preferably, the thickness of the superconducting thin film material of the SQUID chip is 30 to 80 nm; preferably, the thickness of the superconducting thin film material of the dielectric resonator is 80 to 200 nm.

[0013] Preferably, the SQUID central ring area is less than 200×200 μm 2 , the width of the microbridge on the SQUID chip is 2-10 μm, and the width of the first gap is 1-50 μm.

[0014] Preferably, the center ring hole area of ​​the dielectric resonator is 200×200~1500×1500μm 2 , the second gap width is 1 to 200 μm.

[0015] Preferably, the irradiated ions are at least one of the following: helium ions and neon ions.

[0016] The embodiment of the present application also provides a method for preparing a high-parameter controllable radio frequency superconducting quantum interference device, which is used to prepare the high-parameter controllable radio frequency superconducting quantum interference device described in any embodiment of the present application, comprising the following steps:

[0017] epitaxially grow a layer of superconducting thin film material on the first substrate; micro-nano-process the epitaxially grown superconducting thin film material to etch out a SQUID ring hole configuration and a micro-bridge region for preparing a Josephson junction;

[0018] Using a focused ion beam, the microbridge region of the micro-nano processed chip is irradiated to form a Josephson junction, thereby obtaining a SQUID chip containing a ring hole and a Josephson junction;

[0019] epitaxially growing a layer of superconducting thin film material on the second substrate; etching the superconducting thin film material to form a gasket-type ring hole structure, thereby obtaining a dielectric resonator;

[0020] The SQUID chip and the dielectric resonator are bonded and packaged together face to face by using vacuum silicone grease in a flip-chip manner to form an rf SQUID device.

[0021] In an embodiment of the present application, at least one of the following processes is included:

[0022] Superconducting films are grown by pulsed laser deposition, magnetron sputtering or physical and chemical vapor deposition;

[0023] Using ultraviolet lithography, argon ion etching, dry etching or wet etching methods to make a ring hole structure on the film;

[0024] A certain dose of ions is irradiated on the microbridge of the SQUID chip by line scanning to obtain a Josephson junction with specific parameters. The irradiation dose is in the range of 100 to 1000 ions / nm.

[0025] In one embodiment, the method further comprises the following steps: under the condition of a set microbridge width value, changing the irradiation dose to obtain an rf SQUID device, optimizing the noise spectrum density or sensitivity, and obtaining an optimal irradiation dose.

[0026] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects:

[0027] The present invention changes the preparation method of the Josephson junction in the original rf SQUID and adopts focused ion beam irradiation to prepare the Josephson junction, which greatly improves the parameter controllability of the prepared junction. In the process of multiple irradiation writing into the junction, the deviation between the actual irradiation doses written into the junction each time is less than 5%. At the same time, the device preparation process is simplified, and the adverse factors affecting the device performance in the micro-nano processing steps in the preparation process are reduced, thereby improving the device yield and performance consistency. The device magnetic field sensitivity can reach 200fT / Hz 1 / 2 Within (10kHz), the magnetic field sensitivity at low frequency 10Hz reaches 600fT / Hz 1 / 2 Within , good detection of weak magnetic signals can be achieved.

[0028] Helium ion irradiation is a new type of high-temperature superconducting Josephson junction preparation technology. This technology uses the high-precision focused helium ion beam spot provided by the focused helium ion microscope, and has a higher controllability of junction parameters than the traditional high-temperature superconducting junction preparation technology. At the same time, in principle, the writing of the focused helium ion beam irradiation junction can be performed at any position on the chip. Therefore, the preparation of high-temperature rf SQUID devices using this method is significantly more flexible than the traditional grain boundary junction solution, and the preparation process is simpler. It avoids some uncontrollable factors in the device preparation process to a certain extent, thereby achieving the preparation of devices with high consistency and high parameter controllability. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0030] Figure 1 A flow chart of a method provided by an embodiment of the present invention;

[0031] Figure 2.1 It is a schematic diagram of epitaxial growth of superconducting thin film material on the first substrate in the SQUID chip preparation process;

[0032] Figure 2.2 It is a schematic diagram of the three-dimensional structure of the SQUID ring hole and microbridge area in the SQUID chip of the present invention;

[0033] Figure 2.3 This is a schematic diagram of the structural scale of the SQUID ring hole and microbridge region;

[0034] Figure 2.4 This is a schematic diagram of the irradiation method for preparing the Josephson junction in the SQUID chip;

[0035] Figure 2.5 It is a schematic diagram of the location where the Josephson junction is generated at the microbridge;

[0036] Figure 2.6 It is a schematic diagram of epitaxial growth of a superconducting thin film on a second substrate in the process of preparing a dielectric resonator;

[0037] Figure 2.7 It is a schematic diagram of the three-dimensional structure of the dielectric resonator prepared in the present invention;

[0038] Figure 2.8 This is a schematic diagram of the structural scale of the dielectric resonator SQUID ring hole and gap area;

[0039] Figure 2.9 It is a schematic diagram of the three-dimensional structure of a SQUID device formed by a SQUID chip and a dielectric resonator in a flip-chip package;

[0040] Figure 2.10 It is the side view of the package direction;

[0041] Figure 3 (a)-(d) show the noise spectrum data of the rf SQUID device under different irradiation doses D when the YBCO film thickness is 60nm and the junction microbridge width is 3μm;

[0042] Figure 3 (e) is the curve of magnetic flux and magnetic field noise sensitivity changing with irradiation dose. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0044] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0045] Figure 1 The present invention provides a method flow chart of an embodiment of the present invention. The present invention aims to provide a method for preparing a superconducting quantum interference device, wherein the preparation steps of the rf SQUID include 10 to 40.

[0046] Step 10: epitaxially grow a layer of superconducting thin film material on the first substrate; and perform micro-nano machining on the epitaxially grown superconducting thin film material to etch out a SQUID ring hole configuration and a microbridge region for preparing a Josephson junction.

[0047] A first substrate 1 is provided, on which a layer of superconducting thin film material 2 is epitaxially grown, as shown in FIG2(a). Specifically, in this embodiment, the provided substrate is LaAlO3 (5×5 mm 2 ). The material of the substrate includes but is not limited to LaAlO3, and optionally LaAlO3, MgO, SrTiO3 or sapphire (Al2O3).

[0048] Preferably, the superconducting film is a high-temperature superconducting film. The growth method of the high-temperature superconducting film includes but is not limited to pulsed laser deposition, and optional material growth methods such as magnetron sputtering and physical and chemical vapor deposition. The thickness of the grown superconducting film material is 30 to 80 nm. For example, a YBCO superconducting film with a thickness of about 60 nm is epitaxially grown on a substrate using a pulsed laser deposition method.

[0049] The epitaxially grown superconducting thin film material is micro-nano processed to etch out the SQUID ring hole configuration 3 and the microbridge region 4 for preparing the Josephson junction. Specifically, in the present embodiment, the method of ultraviolet lithography and argon ion etching is used to make the following on the thin film: Figure 2.2 The ring hole structure of the SQUID chip shown.

[0050] The above-mentioned photolithography methods include but are not limited to ultraviolet exposure, and laser direct writing and other exposure methods can be used. The etching methods include but are not limited to argon ion etching, and other dry etching or wet etching methods can be used. The area of ​​the central ring hole of SQUID is less than 200×200μm 2 , the width of the microbridge on the SQUID chip is 2 to 10 μm, and the width of the first gap is 1 to 50 μm.

[0051] As the best embodiment of the present application, the size of the SQUID central ring hole 3 is 120×120 μm. 2 A microbridge structure is constructed on one side of the central ring hole. The width of the microbridge on the SQUID chip is w = 3 μm. The area of ​​the central ring hole of the dielectric resonator is 200×200~1500×1500 μm 2 , the second gap width is 1 to 200 μm.

[0052] Step 20: Use a focused ion beam to irradiate the microbridge region of the micro-nano processed chip to form a Josephson junction, thereby obtaining a SQUID chip including a ring hole and a Josephson junction.

[0053] Specifically, a Zeiss Orion helium ion microscope was used to irradiate a certain dose of He on the microbridge of the SQUID chip using a line scan method. + To obtain a Josephson junction with specific parameters, the unit of dose is ions / nm. Figure 2.4The process of preparing a Josephson junction using this method is shown. The reference numeral 6 indicates the focused helium ions (He + ) beam, using line scanning to irradiate Figure 2.5 The junction region indicated by reference numeral 7 in the figure has an irradiation dose in the range of 100 to 1000 ions / nm. Optionally, the focused ion beam comprises helium ions or neon ions.

[0054] In actual preparation, a suitable irradiation dose can be selected according to the width of the microbridge, so as to obtain a Josephson junction with good noise performance. In this case, the optimal irradiation dose used is 150 to 450 ions / nm.

[0055] It should be noted that the method of forming the junction region is not limited to helium ion irradiation, and other focused ion irradiation or focused ion beam etching can also be used to form the junction region. The ions include but are not limited to helium ions, and the helium ion microscope can also use focused ions such as neon to irradiate the sample.

[0056] Step 30: epitaxially grow a layer of superconducting thin film material on the second substrate; and etch the superconducting thin film material into a gasket-type ring hole structure, thereby obtaining a dielectric resonator.

[0057] like Figure 2.6 As shown, another substrate 8 is provided, on which a layer of superconducting thin film material 9 is epitaxially grown. Specifically, in this embodiment, as Figure 2.6 The SrTiO3 substrate (10×10 mm) indicated by reference numeral 8 is shown. 2 ), a YBCO superconducting thin film indicated by reference numeral 9 is epitaxially grown on the substrate by pulsed laser deposition, and the thickness of the thin film is 100 nm.

[0058] The substrate material includes but is not limited to LaAlO3, and optionally LaAlO3, MgO, SrTiO3, single crystal silicon or sapphire substrate. The growth method of the superconducting film includes but is not limited to pulsed laser deposition, and optionally magnetron sputtering and physical and chemical vapor deposition and other material growth methods. The thickness of the grown superconducting film material is 80 to 200 nm.

[0059] The superconducting thin film material is etched to form a gasket-type ring hole structure, thereby obtaining a dielectric resonator. Specifically, in this embodiment, the dielectric resonator structure is prepared by etching according to the pattern 2.8.

[0060] Step 40: Use vacuum silicone grease to bond the SQUID chip and the dielectric resonator together face to face in a flip-chip manner to form an rf SQUID device.

[0061] Preferably, the SQUID chip and the dielectric resonator are bonded face to face and packaged together by flip-chip method using vacuum silicone grease to form an rf SQUID device.

[0062] Specifically, in this implementation case, according to Figure 2.9-2.10 The structure shown encapsulates a SQUID chip and a dielectric resonator to obtain an rf SQUID device, wherein the angles of the gap of the SQUID chip and the gap of the dielectric resonator differ by 90°, and the symmetric centers of the first ring hole and the second ring hole are aligned.

[0063] In some embodiments of the present application, step 50 is also included.

[0064] Step 50: Under the condition of the set microbridge width value, the irradiation dose is changed to obtain an rf SQUID device, the noise spectrum density or the magnetic field sensitivity is optimized, and the optimal irradiation dose is obtained.

[0065] The noise of the rf SQUID device obtained in steps 10 to 40 is measured in the following manner. Figure 3 When the microbridge width is 3 μm, the optimal ion irradiation dose is 360 ions / nm, and the prepared rf SQUID device can reach 185 fT / Hz 1 / 2 By further improving the design of the device structure and size and exploring the corresponding optimal irradiation dose, the magnetic field sensitivity of the rf SQUID device can be further improved in theory.

[0066] based on Figures 2.1 to 2.10 The present application provides a high-parameter controllable radio frequency superconducting quantum interference device, including a SQUID chip and a dielectric resonator.

[0067] The SQUID chip comprises a first substrate 1 and a superconducting thin film material 2 extending outward therefrom, a first ring hole 3 is arranged on the superconducting thin film material, a microbridge structure 5 is arranged on one side of the ring hole, and a first gap 4 extending away from the first ring hole is arranged on the outer side of the microbridge. For example, Figure 2.2 The middle is an oblique view of the SQUID chip showing the ring hole side. Figure 2.3 A top view of the SQUID chip showing the ring hole. Figure 2.3 In the top view, a, b, c, and d represent the sizes of the corresponding structures. The accompanying drawing identifies the ring hole 3 of the SQUID chip, and the accompanying drawing identifies the gap structure of the SQUID chip. Figure 2.3 The enlarged image on the right shows the microbridge structure 5, where w represents the width of the microbridge.

[0068] The dielectric resonator comprises a second substrate 8 and a superconducting thin film material 9 epitaxially grown thereon, a second ring hole is arranged on the superconducting thin film material, and one side of the second ring hole is opened to form a second gap 10 extending away from the second ring hole, such as Figure 2.8 shown.

[0069] Optionally, the first substrate or the second substrate comprises LaAlO3, MgO, SrTiO3 or a sapphire substrate. The superconducting film material epitaxially grown on the first substrate or the second substrate is a high-temperature superconducting film material comprising YBa2Cu3O 7-d ,Bi2Sr2CaCu2O d And other copper oxide high temperature superconducting materials.

[0070] The SQUID chip and the dielectric resonator are face-to-face bonded and packaged in a flip-chip manner, the first ring hole and the second ring hole are located at opposite centers, and the first gap and the second gap extend in directions with an angle difference of 90 degrees. Figure 2.9 shown.

[0071] The microbridge structure irradiates ions to form a Josephson junction. Figure 2.4 6 represents irradiation by a focused helium ion beam. Figure 2.5 It represents a top view, wherein the enlarged area on the right represents the formed junction region position 7. In some embodiments, the Josephson junction may be a series-connected ion irradiation junction, and the number of the series-connected junctions is 2 to 10.

[0072] The steps for measuring the noise characteristics of the rf SQUID device prepared by the technology of the present invention are as follows: before measurement, a SQUID chip with a junction area irradiated with a specific dose is packaged with the same dielectric resonator to form a series of rf SQUID devices and perform comparative noise measurements. The rf SQUID device reads out the signal by coupling with a copper coil, and the signal is connected to a room temperature flux locking circuit through a coaxial line for reading. When the flux locking circuit is in open-circuit mode, a periodically modulated external magnetic field signal is applied to the chip, and the output waveform of the rf SQUID device is observed through an oscilloscope to calibrate the flux-voltage transfer function; when the flux locking circuit is in locked feedback mode, a dynamic signal analyzer is used to record and analyze the voltage noise spectral density of the device. Combined with the transfer function, the flux noise of the device can be obtained The magnetic field sensitivity of the device can be obtained by applying a standard magnetic field to the rf SQUID device through the Helmholtz coil and calibrating the conversion relationship between its magnetic field and magnetic flux.

[0073] Figure 3(a)-(d) show the noise spectrum data of the rf SQUID device under different irradiation doses D when the YBCO film thickness is 60nm and the junction microbridge width is 3μm. Among them, when the irradiation dose D is 190-350ions / nm, the low-frequency noise and white noise of the device both show a downward trend. When the irradiation dose D is greater than 350ions / nm, the device noise begins to increase. Figure 3 As shown in (e), when the irradiation dose is 360ions / nm, the best flux and magnetic field sensitivity that the device can achieve in the white noise range are 55μΦ0 / Hz respectively. 1 / 2 and 185fT / Hz 1 / 2 .

[0074] The above device noise performance curve test shows that the working performance of the rf SQUID device can be precisely and controllably adjusted by changing the parameter of focused helium ion irradiation dose.

[0075] Table 1 lists the relevant preparation parameters of three different rf SQUID devices and the measured device performance. The junctions of these three rf SQUID devices are single and series helium ion irradiated junctions, with the number of series connected being 2 and 3 respectively, and all the junctions using the same irradiation dose of 300ions / nm. According to the experience of the experimental research of this patent, in the process of multiple irradiation writing junctions, the deviation between the actual irradiation doses of each writing junction is usually less than 5%. Since theoretically the flux noise of the rf SQUID device is proportional to the critical current of the junction (controlled by different irradiation doses), and the critical current of the series Josephson junction is determined by the Josephson junction with the smallest critical current, the above experiment can non-destructively verify the performance and junction parameter consistency of the devices prepared under the same irradiation conditions. It can be seen from the table that the values ​​of the 10kHz white noise level of devices with different numbers of junctions are basically the same, and the flux noise is all at 60μΦ0 / Hz 1 / 2 The corresponding magnetic field sensitivity is 200fT / Hz 1 / 2 This proves that the critical current consistency of the junction in the device prepared by helium ion irradiation is good and the device performance is highly controllable.

[0076] Table 1 Fabrication parameters and operating performance of single or tandem helium ion irradiated rf SQUID devices

[0077]

[0078]

[0079] It should be noted that in this application, "x~y" means that the range of values ​​is between x and y, and may include the values ​​of the endpoints x and y. It should also be noted that the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of further restrictions, the elements defined by the sentence "comprise..." do not exclude the presence of other identical elements in the process, method, commodity or device including the elements.

[0080] It will be understood by those skilled in the art that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0081] Those skilled in the art will understand that unless otherwise defined, all terms (including technical, technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which this invention belongs.

[0082] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A high-parameter controllable radio frequency superconducting quantum interference device, characterized in that: include: The SQUID chip comprises a first substrate and a superconducting thin film material epitaxially grown thereon, a first ring hole is arranged on the superconducting thin film material, a microbridge structure is arranged on one side of the ring hole, and a first gap extending away from the first ring hole is arranged on the outer side of the microbridge; The dielectric resonator comprises a second substrate and a superconducting thin film material epitaxially grown thereon, a second annular hole is arranged on the superconducting thin film material, and one side of the second annular hole is opened to form a second gap extending in a direction away from the second annular hole; The SQUID chip and the dielectric resonator are face-to-face bonded and packaged in a flip-chip manner, the first ring hole and the second ring hole are located at opposite centers, and the first gap and the second gap extend in directions with an angle of 90 degrees different from each other; The microbridge structure irradiates ions to form a Josephson junction.

2. A high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 1, characterized in that: The substrate material is LaAlO3, MgO, SrTiO3 or sapphire substrate; and / or, The superconducting film material is YBa2Cu3O 7-d 、Bi2Sr2CaCu2O d Or other copper oxide high temperature superconducting materials.

3. A high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 1, characterized in that: The thickness of the superconducting thin film material of the SQUID chip is 30~80 nm; the thickness of the superconducting thin film material of the dielectric resonator is 80~200 nm.

4. A high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 1, characterized in that: The area of ​​the SQUID center ring is less than 200×200 m 2 The microbridge width on the SQUID chip is 2~10 m, the first gap width is 1~50 m; The area of ​​the central ring hole of the dielectric resonator is 200×200 ~ 1500×1500 m 2 , the second gap width is 1~200 m.

5. A high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 1, characterized in that: The irradiated ions are at least one of the following: helium ions and neon ions.

6. A high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 1, characterized in that: The Josephson junctions are ion irradiation junctions connected in series, and the number of the Josephson junctions connected in series is 2 to 10.

7. A method for preparing a high-parameter controllable radio frequency superconducting quantum interference device, used to prepare the high-parameter controllable radio frequency superconducting quantum interference device according to any one of claims 1 to 6, characterized in that: The following steps are involved: epitaxially grow a layer of superconducting thin film material on the first substrate; micro-nano-process the epitaxially grown superconducting thin film material to etch out a SQUID ring hole configuration and a micro-bridge region for preparing a Josephson junction; Using a focused ion beam, the microbridge region of the micro-nano processed chip is irradiated to form a Josephson junction, thereby obtaining a SQUID chip containing a ring hole and a Josephson junction; epitaxially growing a layer of superconducting thin film material on the second substrate; The superconducting thin film material is etched to form a washer-type ring hole structure, thereby obtaining a dielectric resonator; The SQUID chip and the dielectric resonator are bonded and packaged together face to face by using vacuum silicone grease in a flip-chip manner to form an rf SQUID device.

8. A method for preparing a high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 7, characterized in that: Contains at least one of the following processes: Superconducting films are grown by pulsed laser deposition, magnetron sputtering or physical and chemical vapor deposition; Using ultraviolet lithography, argon ion etching, dry etching or wet etching methods to make a ring hole structure on the film; A certain dose of ions is irradiated on the microbridge of the SQUID chip using line scanning to obtain a Josephson junction with specific parameters. The irradiation dose is in the range of 100~1000 ions / nm.

9. A method for preparing a high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 7, characterized in that: It also includes the following steps: Under the condition of a set microbridge width value, the irradiation dose is changed to obtain an rf SQUID device, optimize the noise spectrum density or sensitivity, and obtain the best irradiation dose.

10. A method for preparing a high-parameter controllable radio frequency superconducting quantum interference device as claimed in claim 7, characterized in that: During the process of multiple irradiation writing of the junction, the deviation between the actual irradiation doses of each writing of the junction is less than 5%.

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