Integrated device, electronic circuit, circuit board and air conditioner

By integrating the IGBT and FRD chips into the same package housing and using common pin connections, the problems of poor device integration and low assembly efficiency in the prior art are solved, and the device is miniaturized and efficient assembly is achieved.

CN119447136APending Publication Date: 2025-02-14FOSHAN SHUNDE MIDEA ELECTRONICS TECH CO LTD +1
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Patent Information

Application Number
CN202310984873.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-08-04
Publication Date
2025-02-14

AI Technical Summary

Technical Problem

Existing power semiconductor devices such as IGBT and FRD are difficult to achieve miniaturization due to discrete devices, and at the same time they are costly, low manufacturing efficiency and low assembly efficiency.

Method used

By simultaneously integrating the first diode chip and the IGBT chip into the same package housing, and connecting the common pins to the corresponding electrodes of the two chips, the number of pins is reduced, the degree of integration is improved, and the device is miniaturized.

Benefits of technology

It realizes high integration and miniaturization of devices, reduces costs and improves manufacturing efficiency, and only one assembly is required to assemble on the circuit board, improving assembly efficiency.

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Abstract

The invention provides an integrated device, an electronic circuit, a circuit board and an air conditioner, the integrated device comprises a packaging shell, a first lead frame, a second lead frame, a first diode chip and an IGBT chip, and the packaging shell is provided with four pins; the first lead frame and the second lead frame are arranged in the packaging shell; the first diode chip is arranged on the first lead frame, the cathode is electrically connected to the first pin through the first lead frame, and the anode is electrically connected with the second pin; the IGBT chip is arranged on the second lead frame, a collector electrode is electrically connected to the second pin through the second lead frame, an emitter electrode is electrically connected with the third pin, and a grid electrode is electrically connected with the fourth pin. According to the invention, the first diode chip and the IGBT chip are integrated and packaged in the same packaging shell, the number of pins is reduced, the integration level is high, and the miniaturization of the device is realized; and in addition, the cost can be reduced, the manufacturing efficiency can be improved, only one-time assembly is needed when the circuit board is assembled, and the assembly efficiency is improved.
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Description

Technical Field

[0001] The present application relates to the technical field of electronic circuits, and in particular to an integrated device, an electronic circuit, a circuit board and an air conditioner. Background Art

[0002] In the related art, the existing air conditioner usually uses the Boost topology circuit, and the main components of the Boost topology circuit include PFC (Power Factor Correction) inductor, switch tube IGBT (Insulated Gate Bipolar Transistor) and freewheeling diode FRD (Fast Recovery Diode) and other key components. However, the existing power semiconductor devices such as IGBT and FRD are all discrete devices with poor integration and difficulty in miniaturization. In addition, since IGBT and FRD are two independent discrete devices, the cost is high and the manufacturing efficiency is low. During the production and assembly period, the pins of these two devices need to be formed separately, and they also need to be assembled on the circuit board twice, which has low assembly efficiency. Summary of the invention

[0003] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes an integrated device, an electronic circuit, a circuit board and an air conditioner, aiming to improve the integration, realize the miniaturization of the device, reduce the cost, and improve the manufacturing efficiency and assembly efficiency.

[0004] In a first aspect, an embodiment of the present application provides an integrated device, including:

[0005] The packaging shell is provided with a first pin, a second pin, a third pin and a fourth pin;

[0006] A first lead frame and a second lead frame are arranged inside the packaging shell;

[0007] A first diode chip is disposed on the first lead frame, wherein a cathode of the first diode chip is electrically connected to the first pin through the first lead frame, and an anode of the first diode chip is electrically connected to the second pin;

[0008] An IGBT chip is arranged on the second lead frame, the collector of the IGBT chip is electrically connected to the second pin through the second lead frame, the emitter is electrically connected to the third pin, and the gate is electrically connected to the fourth pin.

[0009] According to some embodiments of the present application, the first lead frame and the second lead frame are separately arranged, the first lead frame and the first pin are integrally formed, and the second lead frame and the second pin are integrally formed.

[0010] According to some embodiments of the present application, the integrated device further includes an insulating plate, the insulating plate is disposed inside the packaging shell, and the first lead frame and the second lead frame are both fixed to one side of the insulating plate.

[0011] According to some embodiments of the present application, the insulating plate is a ceramic plate.

[0012] According to some embodiments of the present application, the integrated device further includes a metal plate, wherein the metal plate is disposed inside the packaging shell and the metal plate is disposed on the other side of the insulating plate.

[0013] According to some embodiments of the present application, the anode of the first diode chip is connected to the second pin through a first conductive lead, the emitter of the IGBT chip is connected to the third pin through a second conductive lead, and the gate of the IGBT chip is connected to the fourth pin through a third conductive lead.

[0014] According to some embodiments of the present application, the integrated device also includes a second diode chip, which is arranged on the second lead frame, and the anode of the second diode chip is electrically connected to the collector of the IGBT chip through the second lead frame, and the cathode is electrically connected to the emitter of the IGBT chip.

[0015] According to some embodiments of the present application, the cathode of the second diode chip is connected to the emitter of the IGBT chip through a fourth conductive lead.

[0016] In a second aspect, an embodiment of the present application provides an electronic circuit, comprising the integrated device of the first aspect described above.

[0017] According to some embodiments of the present application, the electronic circuit includes a Boost module, the Boost module includes an inductor and the integrated device, and one end of the inductor is connected to the second pin of the integrated device.

[0018] According to some embodiments of the present application, the electronic circuit further includes a rectifier module and a power factor correction module, the rectifier module is connected to the input side of the Boost module, and the power factor correction module is connected to the output side of the Boost module.

[0019] In a third aspect, an embodiment of the present application provides a circuit board, comprising the electronic circuit of the second aspect described above.

[0020] In a fourth aspect, an embodiment of the present application provides an air conditioner, comprising the circuit board of the third aspect.

[0021] According to the technical solution of the embodiment of the present application, the following technical effects are included but not limited to: the integrated device of the embodiment of the present application includes a packaging shell, a first lead frame, a second lead frame, a first diode chip and an IGBT chip, wherein the packaging shell is provided with a first pin, a second pin, a third pin and a fourth pin; the first lead frame and the second lead frame are arranged inside the packaging shell; the first diode chip is arranged on the first lead frame, the cathode is electrically connected to the first pin through the first lead frame, and the anode is electrically connected to the second pin; the IGBT chip is arranged on the second lead frame, the collector is electrically connected to the second pin through the second lead frame, the emitter is electrically connected to the third pin, and the gate is electrically connected to the fourth pin. Since the embodiment of the present application integrates and packages the first diode chip and the IGBT chip in the same packaging shell at the same time, and the second pin is used as a common pin to simultaneously connect the anode of the first diode chip and the collector of the IGBT chip, the number of pins is reduced, and therefore, the integrated device of the embodiment of the present application has a high degree of integration, and also realizes the miniaturization of the device; in addition, the embodiment of the present application can also reduce costs and improve manufacturing efficiency, and only needs to be assembled once when assembled on the circuit board, which improves assembly efficiency.

[0022] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide further understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0024] Figure 1 is a schematic diagram of the front structure of an integrated device provided by an embodiment of the present application;

[0025] Figure 2 It is a schematic diagram of an electronic circuit including a Boost module provided by an embodiment of the present application. DETAILED DESCRIPTION

[0026] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0027] In the description of the present application, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0028] In the description of this application, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0029] In the description of this application, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0030] In some cases, existing air conditioners usually use Boost topology circuits, and the main components of Boost topology circuits include PFC (Power Factor Correction) inductors, switch tubes IGBT (Insulated Gate Bipolar Transistor) and freewheeling diodes FRD (Fast Recovery Diode) and other key components. However, existing power semiconductor devices such as IGBT and FRD are all discrete devices with poor integration and difficulty in miniaturization. In addition, since IGBT and FRD are two independent discrete devices, the cost is high and the manufacturing efficiency is low. During the production and assembly period, the pins of these two devices need to be formed separately, and they also need to be assembled on the circuit board twice, which has low assembly efficiency.

[0031] Based on the above situation, the embodiments of the present application propose an integrated device, an electronic circuit, a circuit board and an air conditioner, aiming to improve the integration, realize device miniaturization, and reduce costs and improve manufacturing efficiency and assembly efficiency.

[0032] Various embodiments of the integrated device of the present application are further described below in conjunction with the accompanying drawings.

[0033] like Figure 1 As shown, Figure 1 It is a front structural schematic diagram of an integrated device provided in one embodiment of the present application.

[0034] In one embodiment, the integrated device 1 of the embodiment of the present application includes but is not limited to a packaging shell 700 , a first lead frame 110 , a second lead frame 120 , a first diode chip 200 and an IGBT chip 300 .

[0035] Specifically, the package shell 700 is provided with four pins, which are respectively a first pin 410, a second pin 420, a third pin 430 and a fourth pin 440; secondly, the package shell 700 is provided with a first lead frame 110 and a second lead frame 120; in addition, the first diode chip 200 is mounted on the first lead frame 110, and the IGBT chip 300 is mounted on the second lead frame 120; wherein the first diode chip 200 is provided with an anode and a cathode, and the first diode chip The anode of the first diode chip 200 is electrically connected to the second pin 420, and the cathode of the first diode chip 200 is electrically connected to the first pin 410 through the first lead frame 110; in addition, the IGBT chip 300 is provided with a collector, an emitter and a gate, wherein the collector of the IGBT chip 300 is electrically connected to the second pin 420 through the second lead frame 120, the emitter of the IGBT chip 300 is electrically connected to the third pin 430, and the gate of the IGBT chip 300 is electrically connected to the fourth pin 440.

[0036] In one embodiment, a first conductive circuit is provided on the first lead frame 110, wherein the first conductive circuit can connect the first diode chip 200 and the first pin 410, specifically, the first conductive circuit can connect the cathode of the first diode chip 200 and the first pin 410; in addition, a second conductive circuit is provided for the second lead frame 120, wherein the second conductive circuit can connect the IGBT chip 300 and the second pin 420, specifically, the second conductive circuit can connect the collector of the IGBT chip 300 and the second pin 420.

[0037] In one embodiment, if Figure 1 As shown, the shapes and sizes of the first lead frame 110 and the second lead frame 120 can match the respective first diode chip 200 and the IGBT chip 300. Specifically, the shape and size of the first lead frame 110 can match the shape and size of the first diode chip 200, and the shape and size of the second lead frame 120 can match the shape and size of the IGBT chip 300.

[0038] By means of this arrangement, the area sizes of the first lead frame 110 and the second lead frame 120 can be reasonably and compactly arranged, so that the integrated device 1 as a whole can be made smaller.

[0039] It is understandable that the first diode chip 200 mentioned above can be an electronic device made of semiconductor materials. The diode is provided with two electrodes, namely, a positive electrode and a negative electrode, the positive electrode is also called an anode, and the negative electrode is also called a cathode. When a forward voltage is applied between the two electrodes of the diode, the diode is turned on; when a reverse voltage is applied between the two electrodes of the diode, the diode is turned off.

[0040] In addition, it can be understood that the above-mentioned IGBT chip 300 is an insulated gate bipolar transistor chip, which is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, and has the advantages of both the high input impedance of a metal oxide semiconductor field effect transistor and the low conduction voltage drop of a power transistor. The power transistor has a low saturation voltage drop and a large current density, but a large driving current; the metal oxide semiconductor field effect transistor has a very small driving power and a fast switching speed, but a large conduction voltage drop and a small current density. Therefore, the IGBT chip 300 combines the advantages of the above two devices, with low driving power and low saturation voltage drop.

[0041] It is understandable that the first diode chip 200 can be disposed on the first lead frame 110 by welding, and the IGBT chip 300 can be disposed on the second lead frame 120 by welding.

[0042] It should be noted that the first diode chip 200 can be used as a freewheeling diode in a Boost topology circuit; in addition, the IGBT chip 300 can be used as a switch IGBT in a Boost topology circuit. Alternatively, the circuit scenarios for the first diode chip 200 and the IGBT chip 300 can also be other scenarios, which are not specifically limited in the embodiments of the present application.

[0043] It is worth noting that Figure 1 As shown, since the embodiment of the present application integrates and packages the first diode chip 200 and the IGBT chip 300 in the same packaging shell 700, that is, the wafers of the two devices are integrated in the same packaging shell 700, and the circuits are connected through internal binding wires, further integration of the two power devices is achieved.

[0044] In addition, it is worth noting that Figure 1 As shown, since the embodiment of the present application also uses the second pin 420 as a common pin to simultaneously connect to the anode of the first diode chip 200 and the collector of the IGBT chip 300, the number of pins is reduced, the integration of the integrated device 1 is further improved, and the miniaturization of the device is further achieved.

[0045] In addition, it is worth noting that the embodiments of the present application can also reduce costs and improve manufacturing efficiency, and only need to be assembled once when assembled on a circuit board, thereby improving assembly efficiency.

[0046] In one embodiment, if Figure 1 As shown, since the electrical characteristic of the back of the IGBT chip 300 is a collector, and the back of the first diode chip 200 is a cathode, the potential characteristics of the backs of the two chips are inconsistent, and therefore they cannot be placed on the same lead frame. Therefore, the embodiment of the present application sets a first lead frame 110 and a second lead frame 120, and the first lead frame 110 and the second lead frame 120 can be separated.

[0047] In one embodiment, if Figure 1 As shown, the first lead frame 110 and the first pin 410 can be integrally formed, or the first lead frame 110 and the first pin 410 can be separated and connected by a conductive lead wire. Figure 1 As shown, the second lead frame 120 can be integrally formed with the second pin 420, or the second lead frame 120 can be separated from the second pin 420 and connected to the second pin 420 by a conductive wire. This embodiment of the application does not specifically limit this.

[0048] In one embodiment, if Figure 1 As shown, the integrated device 1 of the embodiment of the present application further includes but is not limited to an insulating plate 500 , which can be installed inside the packaging shell 700 , and the first lead frame 110 and the second lead frame 120 are both fixed to one side of the insulating plate 500 .

[0049] Specifically, since the electrical characteristic of the back of the first diode chip 200 is a cathode, and the electrical characteristic of the back of the IGBT chip 300 is a collector, that is, the electrical characteristic corresponding to the first lead frame 110 is the cathode of the first diode chip 200, and the electrical characteristic corresponding to the second lead frame 120 is the collector of the IGBT chip 300.

[0050] Therefore, the electrical characteristics corresponding to the first lead frame 110 and the second lead frame 120 are also different. Therefore, the embodiment of the present application sets an insulating plate 500 to isolate and realize the integrated application of devices with different potential characteristics of the first diode chip 200 and the IGBT chip 300.

[0051] In one embodiment, the insulating plate 500 of the embodiment of the present application may be a ceramic plate or a plate made of other insulating materials, and the embodiment of the present application does not specifically limit the material type of the insulating plate 500. Among them, when the insulating plate 500 of the embodiment of the present application is a ceramic plate of aluminum oxide, it can not only achieve electrical property isolation, but also greatly reduce the thermal resistance of heat dissipation.

[0052] In one embodiment, if Figure 1 As shown, the integrated device 1 of the embodiment of the present application further includes but is not limited to a metal plate 600 . The metal plate 600 can be installed inside the packaging shell 700 , and the metal plate 600 is installed on the other side of the insulating plate 500 .

[0053] Specifically, since the first diode chip 200 and the IGBT chip 300 generate a large amount of heat during operation, in order to ensure the normal operation of the first diode chip 200 and the IGBT chip 300 , it is necessary to use the metal plate 600 to dissipate heat in a timely manner.

[0054] The material of the metal plate 600 may be copper, aluminum, or other materials. The embodiment of the present application does not specifically limit the material of the metal plate 600 .

[0055] In one embodiment, since the anode of the first diode chip 200 and the second pin 420 are separated, in order to achieve electrical connection between the anode of the first diode chip 200 and the second pin 420, the anode of the first diode chip 200 can be connected to the second pin 420 through the first conductive lead 910.

[0056] In one embodiment, since the emitter of the IGBT chip 300 and the third pin 430 are separated, in order to achieve electrical connection between the emitter of the IGBT chip 300 and the third pin 430, the emitter of the IGBT chip 300 can be connected to the third pin 430 through a second conductive lead 920.

[0057] In one embodiment, since the gate of the IGBT chip 300 and the fourth pin 440 are separated, in order to achieve electrical connection between the gate of the IGBT chip 300 and the fourth pin 440, the gate of the IGBT chip 300 can be connected to the fourth pin 440 through the third conductive lead 930.

[0058] In one embodiment, in order to prevent the IGBT chip 300 from failing, a second diode may be reversely connected and welded in parallel between the collector and emitter of the IGBT chip 300. The second diode may be a fast recovery diode, which functions to provide a freewheeling channel for the IGBT chip 300 when it is working and prevent it from being damaged by breakdown. Figure 1 As shown, in the embodiment of the present application, the second diode chip 800 can be set on the second lead frame 120, the anode of the second diode chip 800 is electrically connected to the collector of the IGBT chip 300 through the second lead frame 120, and the cathode of the second diode chip 800 is electrically connected to the emitter of the IGBT chip 300.

[0059] It should be noted that since the second diode chip 800 is reversely connected in parallel between the collector and emitter of the IGBT chip 300, that is, the electrical characteristics of the anode of the second diode chip 800 and the collector of the IGBT chip 300 are consistent, the second diode chip 800 and the IGBT chip 300 can be set on the second lead frame 120 at the same time.

[0060] It is understandable that the second diode chip 800 can be disposed on the second lead frame 120 by welding.

[0061] In one embodiment, the cathode of the second diode chip 800 , the emitter of the IGBT chip 300 , and the third pin 430 have the same electrical characteristics and are separated from each other.

[0062] Therefore, in order to achieve electrical connection between the cathode of the second diode chip 800, the emitter of the IGBT chip 300 and the third pin 430, the cathode of the second diode chip 800 can be connected to the emitter of the IGBT chip 300 through the fourth conductive lead 940, or the cathode of the second diode chip 800 can be connected to the third pin 430 through the fifth conductive lead.

[0063] Based on the integrated device 1 of each of the above-mentioned embodiments, the integrated device 1 of the embodiment of the present application includes but is not limited to the following technical effects: 1. The area of ​​the heat-generating device is reduced, and the integration and miniaturization are higher. 2. The distance from the collector of the IGBT chip 300 to the anode of the first diode chip 200 can be minimized, and the parasitic inductance can be minimized. In addition, the external buffer capacitor can be installed at the shortest possible distance to reduce electromagnetic noise. 3. It can prevent IGBT failure caused by improper installation of the insulating plate 500. 4. Since the interference is reduced, the gate resistance can also be reduced, thereby reducing the switching loss. For example, the on-resistance can be reduced from 75Ω to 47Ω, which can reduce the switch conduction loss by 15% and the total IGBT loss by 8.8%.

[0064] Based on the integrated device 1 of each of the above embodiments, various embodiments of the electronic circuit, circuit board and air conditioner of the present application are respectively proposed below.

[0065] An embodiment of the present application provides an electronic circuit, comprising the integrated device 1 of any one of the above embodiments.

[0066] It is worth noting that since the electronic circuit of the embodiment of the present application includes the integrated device 1 of any of the above embodiments, the specific implementation methods and technical effects of the electronic circuit of the embodiment of the present application can refer to the specific implementation methods and technical effects of the integrated device 1 of any of the above embodiments.

[0067] In addition, if Figure 2 As shown, Figure 2 It is a schematic diagram of an electronic circuit including a Boost module 10 provided in one embodiment of the present application.

[0068] In one embodiment, the electronic circuit of the embodiment of the present application includes but is not limited to a Boost module 10 , the Boost module 10 includes an inductor L and an integrated device 1 , and one end of the inductor L is connected to the second pin 420 of the integrated device 1 .

[0069] In one embodiment, the electronic circuit of the embodiment of the present application also includes but is not limited to a rectifier module 20 and a power factor correction module 30, the input end of the rectifier module 20 is used to connect to an AC power supply, the output end of the rectifier module 20 is connected to the input side of the Boost module 10, the input end of the power factor correction module 30 is connected to the output side of the Boost module 10, and the output end of the power factor correction module 30 is used to connect to a load, wherein the load can be a compressor or other equipment, and the embodiment of the present application does not specifically limit this.

[0070] An embodiment of the present application further provides a circuit board, comprising the electronic circuit of any one of the above embodiments.

[0071] It is worth noting that since the circuit board of the embodiment of the present application includes the electronic circuit of any of the above-mentioned embodiments, and the electronic circuit of the above-mentioned embodiments includes the integrated device 1 of any of the above-mentioned embodiments, the specific implementation manner and technical effects of the circuit board of the embodiment of the present application can refer to the specific implementation manner and technical effects of the integrated device 1 of any of the above-mentioned embodiments.

[0072] An embodiment of the present application further provides an air conditioner, comprising the circuit board of any one of the above embodiments.

[0073] It is worth noting that since the air conditioner of the embodiment of the present application includes the circuit board of the above-mentioned embodiment, and the circuit board of the above-mentioned embodiment includes the electronic circuit of any of the above-mentioned embodiments, and the electronic circuit of the above-mentioned embodiment includes the integrated device 1 of any of the above-mentioned embodiments, therefore, the specific implementation manner and technical effects of the air conditioner of the embodiment of the present application can refer to the specific implementation manner and technical effects of the integrated device 1 of any of the above-mentioned embodiments.

[0074] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, the terms "connection", "direct connection", "indirect connection", "fixed connection", "installation", and "assembly" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; the terms "installation", "connection", and "fixed connection" can be a direct connection, or an indirect connection through an intermediate medium, or the internal connection of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0075] Although the implementation methods disclosed in this application are as above, the contents are only implementation methods adopted to facilitate understanding of this application, and are not intended to limit this application. Any technician in the field to which this application belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in this application, but the scope of patent protection of this application shall still be defined by the attached claims.

[0076] The above is a specific description of the preferred implementation of the present application, but the present application is not limited to the above implementation mode. Technical personnel familiar with the field can also make various equivalent modifications or substitutions under the shared conditions without violating the spirit of the present application. These equivalent modifications or substitutions are all included in the scope defined by the claims of the present application.

Claims

1. An integrated device, characterized in that: include: The packaging shell is provided with a first pin, a second pin, a third pin and a fourth pin; A first lead frame and a second lead frame are arranged inside the packaging shell; A first diode chip is disposed on the first lead frame, wherein a cathode of the first diode chip is electrically connected to the first pin through the first lead frame, and an anode of the first diode chip is electrically connected to the second pin; An IGBT chip is arranged on the second lead frame, the collector of the IGBT chip is electrically connected to the second pin through the second lead frame, the emitter is electrically connected to the third pin, and the gate is electrically connected to the fourth pin.

2. The integrated device according to claim 1, characterized in that: The first lead frame and the second lead frame are separately arranged, the first lead frame and the first lead are integrally formed, and the second lead frame and the second lead are integrally formed.

3. The integrated device according to claim 1 or 2, characterized in that: The integrated device further comprises an insulating plate, wherein the insulating plate is arranged inside the packaging shell, and the first lead frame and the second lead frame are both fixed to one side of the insulating plate.

4. The integrated device according to claim 3, characterized in that: The insulating plate is a ceramic plate.

5. The integrated device according to claim 3, characterized in that: The integrated device further comprises a metal plate, wherein the metal plate is arranged inside the packaging shell and the metal plate is arranged on the other side of the insulating plate.

6. The integrated device according to claim 1, characterized in that: The anode of the first diode chip is connected to the second pin through a first conductive lead, the emitter of the IGBT chip is connected to the third pin through a second conductive lead, and the gate of the IGBT chip is connected to the fourth pin through a third conductive lead.

7. The integrated device according to claim 1, characterized in that: The integrated device also includes a second diode chip, which is arranged on the second lead frame, wherein an anode of the second diode chip is electrically connected to a collector of the IGBT chip through the second lead frame, and a cathode of the second diode chip is electrically connected to an emitter of the IGBT chip.

8. The integrated device according to claim 7, characterized in that: The cathode of the second diode chip is connected to the emitter of the IGBT chip through a fourth conductive lead.

9. An electronic circuit, characterized in that: Comprising an integrated device as claimed in any one of claims 1 to 8.

10. The electronic circuit according to claim 9, characterized in that The electronic circuit includes a Boost module, and the Boost module includes an inductor and the integrated device. One end of the inductor is connected to the second pin of the integrated device.

11. The electronic circuit according to claim 10, characterized in that The electronic circuit further includes a rectifier module and a power factor correction module. The rectifier module is connected to the input side of the Boost module, and the power factor correction module is connected to the output side of the Boost module.

12. A circuit board, characterized in that: An electronic circuit comprising any one of claims 9 to 11.

13. An air conditioner, characterized in that: Includes the circuit board as claimed in claim 12.