Sheath heater and objective table

Abstract

The sheath heater includes: a metal sheath; a heating wire disposed in the sheath; an insulating material filled in the sheath to separate the metal sheath from the heating wire; a lead wire for supplying power to the heating wire; the crimping sleeve is used for connecting the heating wire and the lead wire which extend out from the end part of the metal sheath; a cylindrical member which covers an end portion of the metal sheath and in which the crimping sleeve is disposed; and a cover-shaped member fitted to the cylindrical member and including an opening into which the lead wire is inserted, an end portion of the metal sheath including: a first insulating tube including a first through-hole into which the heating wire is inserted; and a sealing material for filling a gap between the metal sheath and the first insulating tube, the sealing material including a ceramic adhesive.

Description

Technical Field

[0001] One embodiment of the present invention relates to a sheath heater. In addition, one embodiment of the present invention relates to a stage including the sheath heater. Background Art

[0002] Semiconductor devices are mounted on almost all electronic devices and play an important role in the functions of electronic devices. Semiconductor devices are devices that utilize the semiconductor properties of silicon and the like. Semiconductor devices are formed by stacking semiconductor films, insulating films, and conductive films on a substrate and patterning these films. These films are stacked using evaporation, sputtering, chemical vapor deposition (CVD) or chemical reactions of the substrate, and patterning these films by photolithography. The photolithography process includes: forming a resist film on the film for patterning, exposing the resist film, forming a resist mask by developing, partially removing the film by etching, and removing the resist mask.

[0003] The characteristics of the above-mentioned film depend largely on the conditions when the film is formed or the conditions when patterning. One of the conditions is the substrate temperature. In many cases, the temperature of the substrate is controlled by adjusting the temperature of a stage (hereinafter referred to as "stage") on which the substrate is placed. In order to heat the substrate and suppress the temperature distribution in the substrate to be uniform, one of the heaters used to heat the stage is a sheath heater. For example, Patent Document 1 discloses a stage including a plurality of sheath heaters, in which a heating wire (heating wire) is arranged in a metal sheath.

[0004] (Prior art literature)

[0005] (Patent Document)

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-91660

[0007] Patent Document 2: Japanese Patent Application Publication No. 2021-26857 Summary of the invention

[0008] (Problems to be solved by the invention)

[0009] In a sheath heater, in order to prevent a short circuit between a metal sheath and a heating wire, an insulating material is filled in the metal sheath (for example, refer to Patent Document 2). In addition, in order to prevent moisture absorption and scattering of the insulating material filled in the metal sheath, the end of the metal sheath is sealed with an epoxy adhesive. When the sheath heater is used on a stage, the end of the metal sheath is preferably accommodated in the shaft of the stage. However, the temperature in the shaft may become a high temperature (for example, exceeding 100 degrees). In this case, since the heat resistance temperature of the epoxy adhesive is low, the above-mentioned structure cannot be applied. Therefore, in order to expand the operating temperature range of the stage, a sheath heater with improved heat resistance is desired.

[0010] In view of the above problems, one object of one embodiment of the present invention is to provide a sheath heater having improved heat resistance. Another object of one embodiment of the present invention is to provide a stage that can be used in a wide temperature range.

[0011] (Measures taken to solve the problem)

[0012] A sheath heater according to one embodiment of the present invention includes a metal sheath; a heating wire, which is arranged in the sheath; an insulating material, which is filled in the metal sheath to separate the metal sheath from the heating wire; a lead wire, which supplies power to the heating wire; a crimping sleeve, which is used to connect the heating wire and the lead wire extending from the end of the metal sheath; a cylindrical member, which covers the end of the metal sheath and is provided with the crimping sleeve; and a cover member, which is embedded with the cylindrical member and includes an opening for inserting the lead wire, and the end of the metal sheath includes: a first insulating tube, which includes a first through hole for inserting the heating wire; and a sealing material, which is used to fill the gap between the metal sheath and the first insulating tube, and the sealing material includes a ceramic adhesive.

[0013] The first insulating tube may include two first through holes.

[0014] The sheath heater may further include a second insulating tube that is disposed in the cylindrical member and includes a second through hole, and the crimping sleeve may be disposed in the second through hole.

[0015] The second insulating tube may include two second through holes.

[0016] The sheath heater may further include a locking member fixed to the lead wire, the locking member may not be engaged with the cover member. The locking member may be fixed to the lead wire by clamping the lead wire.

[0017] The sheath heater may further include a third insulating tube disposed between the first insulating tube and the second insulating tube in the cylindrical member and including a third through hole for inserting the heating wire. The outer diameter of the third insulating tube may be smaller than the hole diameter of the second through hole.

[0018] At least a portion of the third insulating tube may extend into the second through hole. Two third insulating tubes may be arranged in the cylindrical member.

[0019] A stage according to one embodiment of the present invention includes a shaft and a sheath heater, and an end portion of a metal sheath is accommodated in the shaft.

[0020] (Effects of the Invention)

[0021] The sheath heater according to one embodiment of the present invention has a structure in which the terminal portion can withstand high temperatures. Therefore, the heat resistance of the sheath heater is improved. In addition, the stage according to one embodiment of the present invention includes the sheath heater with improved heat resistance, so the operating temperature range of the stage is expanded. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic plan view showing the external appearance structure of a sheath heater according to an embodiment of the present invention.

[0023] Figure 2 This is a schematic cross-sectional view showing the internal structure of a sheath heater according to an embodiment of the present invention.

[0024] Figure 3A This is a schematic cross-sectional view showing the structure of a sheath heater according to an embodiment of the present invention.

[0025] Figure 3B This is a schematic cross-sectional view showing the structure of a sheath heater according to an embodiment of the present invention.

[0026] Figure 3C This is a schematic cross-sectional view showing the structure of a sheath heater according to an embodiment of the present invention.

[0027] Figure 4 It is a schematic perspective view showing the external appearance structure of a stage according to one embodiment of the present invention.

[0028] Figure 5 This is a schematic plan view showing the arrangement structure of the sheath heater included in the stage according to one embodiment of the present invention.

[0029] Figure 6 This is a schematic cross-sectional view showing the internal structure of a stage according to one embodiment of the present invention.

[0030] Figure 7 This is a schematic cross-sectional view showing the internal structure of a stage according to one embodiment of the present invention.

[0031] Figure 8This is a schematic cross-sectional view showing the internal structure of a stage according to one embodiment of the present invention.

[0032] Fig. 9 This is a schematic plan view showing the arrangement structure of the sheath heater included in the stage according to one embodiment of the present invention.

[0033] Fig.10 This is a schematic cross-sectional view showing the structure of an etching device according to one embodiment of the present invention.

[0034] Fig.11 This is a schematic cross-sectional view showing the structure of a CVD apparatus according to one embodiment of the present invention.

[0035] Fig.12 It is a schematic cross-sectional view showing the structure of a sputtering device according to one embodiment of the present invention.

[0036] Fig.13 This is a schematic cross-sectional view showing the structure of a vapor deposition device according to one embodiment of the present invention. DETAILED DESCRIPTION

[0037] Hereinafter, various embodiments of the invention disclosed in the present application will be described with reference to the drawings. However, the present invention can be implemented in various forms without departing from the gist thereof, and should not be construed as being limited to the description of the embodiments illustrated below.

[0038] For a clearer description, the drawings may schematically show the width, thickness, shape, etc. of each part compared to the actual aspects, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and the drawings, elements having the same functions as elements described with reference to the drawings already shown may be shown by the same reference numerals, and their repeated description may be omitted. In addition, for ease of description, words such as "upper" or "lower" are used for description, but "upper" or "lower" respectively indicate the direction when the stage is used (when the substrate is placed).

[0039] In this specification and the drawings, the same reference numerals are used when the same or similar structures are represented as a whole, and additional capital letters are added when each of these multiple structures is represented by distinction. When multiple parts of a structure are represented by distinction, the same reference numerals are used, and hyphens and natural numbers are used.

[0040] <First Embodiment>

[0041] Reference Figures 1 to 3C , a sheath heater 10 according to an embodiment of the present invention will be described.

[0042] Figure 1 This is a schematic plan view showing the external appearance structure of a sheath heater 10 according to an embodiment of the present invention. Figure 2 1 is a schematic cross-sectional view showing the internal structure of the sheath heater 10 according to one embodiment of the present invention. Specifically, Figure 2 For Figure 1 The cross-sectional view corresponding to the plan view. FIG. 3A to FIG. 3C 1 is a schematic cross-sectional view showing the structure of a sheath heater 10 according to an embodiment of the present invention. Specifically, Figure 3A For along Figure 2 The cross-sectional view of the sheath heater 10 cut along the line A1-A2 is shown. Figure 3B For along Figure 2 The cross-sectional view of the sheath heater 10 cut along the line B1-B2 is shown. Figure 3C For along Figure 2 The cross-sectional view of the sheath heater 10 is shown with the line C1 - C2 cut off.

[0043] The sheath heater 10 includes a heater portion 100 and a terminal portion 200. The heater portion 100 includes a metal sheath 110, a heating wire 120, an insulating material 130, a first insulating tube 140, and a sealing material 150. The terminal portion 200 includes a cylindrical member 210, a cover member 220, a locking member 230, a lead wire 240, a connecting terminal 250, a crimping sleeve 260, a second insulating tube 270, and a third insulating tube 280. In addition, some components of the heater portion 100 enter the terminal portion 200, so it is sometimes described as the terminal portion 200 below.

[0044] In the heater part 100, the heating wire 120 is disposed in the metal sheath 110. The insulating material 130 is filled in the metal sheath 110 in such a manner as to separate the metal sheath 110 and the heating wire 120 from each other. That is, the heating wire 120 is embedded in the insulating material 130 to be electrically insulated from the metal sheath 110.

[0045] The first end 111-1 of the metal sheath 110 is open, and the second end 111-2 of the metal sheath 110 is closed. The first insulating tube 140 is disposed at the first end 111-1 of the metal sheath 110. A sealing material 150 is filled in the gap between the metal sheath 110 and the first insulating tube 140, and the first insulating tube 140 is fixed to the first end 111-1 of the metal sheath 110.

[0046] The cross-sectional shape of the first insulating tube 140 is circular, but not limited thereto. Preferably, the outer diameter of the first insulating tube 140 is smaller than the inner diameter of the metal sheath 110, and a portion of the first insulating tube 140 is inserted into the metal sheath 110. The first insulating tube 140 includes two first through holes 141. Inside the metal sheath 110, the heating wire 120 is folded, and both ends of the heating wire 120 extend outward from the first end 111-1 of the metal sheath 110. In other words, at the first end 111-1 of the metal sheath 110, the two heating wires 120 at the two ends are respectively inserted into the first through holes 141.

[0047] The metal sheath 110 has a small outer diameter and is flexible. Therefore, the heater part 100 can be bent. In addition, since the heating wire 120 is protected by the metal sheath 110 and the insulating material 130, the heater part 100 has excellent impact resistance and corrosion resistance.

[0048] The thermal conductivity of the metal sheath 110 is preferably 10 W / mK or more and 430 W / mK or less. As the material of the metal sheath 110 , for example, a metal such as aluminum, titanium, nickel, iron, chromium, niobium, copper, or molybdenum, or an alloy thereof can be used.

[0049] The heating wire 120 includes a heating wire and a non-heating wire. The heating wire generates heat when power is supplied. On the other hand, the non-heating wire has a higher thermal conductivity than the heating wire and suppresses the generation of heat. Therefore, when power is supplied to the heating wire 120, heat is mainly generated by the heating wire. The junction of the heating wire and the non-heating wire is located in the metal sheath 110, and the non-heating wire of the heating wire 120 extends outward from the first end 111-1 of the metal sheath 110. As a material for the heating wire, for example, a metal such as nickel, chromium, iron, molybdenum, tungsten or aluminum, carbon, or an alloy thereof or an oxide thereof can be used. As a material for the non-heating wire, for example, a metal such as aluminum, copper, nickel or iron, or an alloy thereof can be used.

[0050] The insulating material 130 is filled in the metal sheath 110 in the form of powder or fine particles. Alternatively, the insulating material 130 may be filled in the metal sheath 110 in the form of a sintered body, a calcined body or a powder compact of the powder or fine particles. The thermal conductivity of the insulating material 130 is preferably 10 W / mK or more and 300 W / mK or less. As the material of the insulating material 130, for example, magnesium oxide, aluminum oxide, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, niobium carbide, etc. can be used.

[0051] As the material of the first insulating tube 140, for example, magnesium oxide, aluminum oxide, aluminum nitride, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, or niobium carbide can be used.

[0052] As the sealing material 150, for example, a ceramic sealing material including a ceramic adhesive is used. The heat resistance of the ceramic sealing material is better than that of the epoxy sealing material. The material of the ceramic adhesive can be, for example, magnesium oxide, aluminum oxide, aluminum nitride, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, niobium carbide, etc.

[0053] In terminal part 200, cylindrical member 210 comprises first cylinder 211-1 and second cylinder 211-2, and has the structure that first cylinder 211-1 and second cylinder 211-2 are connected to each other. The inner diameter (or outer diameter) of first cylinder 211-1 is larger than the inner diameter (or outer diameter) of second cylinder 211-2. That is, cylindrical member 210 has the structure that first cylinder 211-1 and second cylinder 211-2 are connected in step shape. However, the configuration of cylindrical member 210 is not limited thereto. It is also possible that cylindrical member 210 has the structure that first cylinder 211-1 and second cylinder 211-2 are connected in a cone shape.

[0054] The inner diameter of the second cylinder 211-2 is substantially consistent with the outer diameter of the metal sheath 110, and the first end 111-1 of the metal sheath 110 is inserted into the second cylinder 211-2 of the cylindrical member 210. In other words, the second cylinder 211-2 of the cylindrical member 210 covers the first end 111-1 of the metal sheath 110. The opening of the cylindrical member 210 (the opening on the side of the first cylinder 211-1) is covered by the cover member 220. A flange portion 212 is provided on the outer peripheral surface of the first cylinder 211-1, and the cover member 220 is locked by the end of the first cylinder 211-1 and the flange portion 212.

[0055] The first end portion 111-1 of the metal sheath 110 inserted in the second cylinder 211-2 of the cylindrical member 210 is joined to the second cylinder 211-2 of the cylindrical member 210 by welding or brazing. In addition, the cover member 220 is joined to the flange portion 212 by welding, screw fastening, brazing, etc. As brazing, for example, the following alloys can be used: an alloy containing silver, copper and zinc; an alloy containing copper and zinc; an alloy containing copper and aluminum containing a trace amount of phosphorus; an alloy containing titanium, copper and nickel; an alloy containing titanium, zirconium and copper; an alloy containing titanium, zirconium, copper and nickel, etc.

[0056] The cover-like member 220 includes an opening 221. The caliber of the opening 221 of the cover-like member 220 is smaller than the caliber of the opening of the first cylinder 211-1 of the cylindrical member 210. Two lead wires 240 are inserted into the opening 221 of the cover-like member 220. That is, one end of the lead wire 240 is located inside the cylindrical member 210, and the other end of the lead wire 240 is located outside the cylindrical member 210. The other end of the lead wire 240 is connected to a connection terminal 250. The connection terminal 250 is connected to a power supply that supplies power to the sheath heater 10.

[0057] The lead wire 240 extending to the outside of the cylindrical member 210 through the opening of the cover member 220 is installed with a locking member 230. The locking member 230 clamps the lead wire 240 and is fixed to the lead wire 240. The locking member 230 may be in contact with the cover member 220, but the locking member 230 and the cover member 220 are not engaged with each other. The locking member 230 is, for example, a set collar, but is not limited thereto.

[0058] In the cylindrical member 210, the heater wire 120 is connected to the lead wire 240. Specifically, both ends of the heater wire 120 are connected to one end of the lead wire 240 through the crimping sleeve 260. Therefore, two crimping sleeves 260 corresponding to the two lead wires 240 exist in the cylindrical member 210.

[0059] The heating wire 120 may expand and contract due to heat or the like. In this case, if the lead wire 240 connected to the heating wire 120 is fixed, there is a risk that the heating wire 120 loses its elasticity and the heating wire 120 is disconnected. Therefore, in the sheath heater 10, as described above, the locking member 230 fixed to the lead wire 240 is not engaged with the cover member 220, but moves in accordance with the expansion and contraction of the heating wire 120.

[0060] A second insulating tube 270 and two third insulating tubes 280 are disposed in the cylindrical member 210. Figure 3B and Figure 3CAs shown, the cross-sectional shape of the second insulating tube 270 is a roughly elliptical shape with a straight portion, but is not limited thereto. The maximum outer diameter of the second insulating tube 270 is roughly consistent with the inner diameter of the first barrel 211-1 of the cylindrical member 210. The second insulating tube 270 includes two second through holes 271. Two crimping sleeves 260 are respectively arranged in the two second through holes 271. Therefore, the two crimping sleeves 260 are electrically insulated by the partition wall between the two second through holes 271 of the second insulating tube 270. The third insulating tube 280 is arranged between the first insulating tube 140 and the second insulating tube 270. The cross-sectional shape of the third insulating tube 280 is circular, but is not limited thereto. The third insulating tube 280 includes at least one third through hole 281. The heating wire 120 extending from the first through hole 141 of the first insulating tube 140 is inserted into the third through hole 281. The two heating wires 120 extend in the cylindrical member 210. In order to prevent the two heating wires 120 extending between the first insulating tube 140 and the second insulating tube 270 from short-circuiting, the two heating wires 120 are respectively covered by the third insulating tube 280 in the cylindrical member 210 .

[0061] The outer diameter of the third insulating tube 280 is smaller than the diameter of the second through hole 271 of the second insulating tube 270. At least a portion of the third insulating tube 280 may enter the second through hole 271 of the second insulating tube 270.

[0062] As the material of each of the cylindrical member 210 and the lid-shaped member 220, the same material as the metal sheath 110 can be used. In addition, as the material of each of the cylindrical member 210 and the lid-shaped member 220, stainless steel or the like can also be used.

[0063] As the material of each of the second insulating tube 270 and the third insulating tube 280 , the same material as the first insulating tube 140 can be used.

[0064] As described above, the sheath heater 10 does not include a member having a low heat resistance temperature such as an epoxy adhesive. Therefore, the heat resistance of the sheath heater 10 is improved.

[0065] The sheath heater 10 is a so-called single-terminal sheath heater. However, the structure of the sheath heater 10 can also be applied to a double-terminal sheath heater, and the same effect can be obtained.

[0066] <Second Embodiment>

[0067] Reference Figures 4 to 6 , a stage 20 according to an embodiment of the present invention will be described. The stage 20 includes a sheath heater 10. Therefore, the description of the same or similar structure as that described in the first embodiment may be omitted below.

[0068] Figure 4It is a schematic perspective view showing the external structure of the stage 20 according to one embodiment of the present invention.

[0069] like Figure 4 As shown, the stage 20 includes a first support plate 310, a second support plate 320, and a shaft 330. The first support plate 310 and the second support plate 320 overlap, and the second support plate 320 is arranged below the first support plate 310. The second support plate 320 is joined to the first support plate 310 by welding, screwing, or brazing. The shaft 330 is arranged below the second support plate 310 to support the first support plate 320 and the second support plate 320. The shaft 330 is joined to the second support plate 320 by welding, screwing, or brazing.

[0070] A semiconductor substrate including silicon or a compound semiconductor or an insulating substrate including quartz or glass is placed on the first support plate 310. Therefore, the upper surface of the first support plate 310 has a flat surface. As the material of the first support plate 310, for example, a metal having a thermal conductivity of 200 W / mK or more and 430 W / mK or less can be used. Since the first support plate 310 includes a metal with high thermal conductivity, the heat energy generated by the sheath heater 10 can be efficiently conducted to the first support plate 310. In addition, the metal included in the first support plate 310 preferably has a thermal conductivity of 5×10 -6 / K or above and 25×10 -6 The thermal expansion coefficient is 0.1 / K or less. Specifically, as the metal of the first support plate 310, titanium, aluminum, stainless steel, or the like can be used.

[0071] Although not shown, an electrostatic chuck for fixing the substrate, a through hole for supplying a gas with high thermal conductivity such as helium between the substrate and the stage 20, or a circulation channel for circulating a liquid medium may be provided on the first support plate 310.

[0072] As a material of the second support plate 320, the same metal as the first support plate 310 may be used. The metal included in the second support plate 320 may be the same as or different from the metal included in the first support plate 310. When the metal included in the first support plate 310 and the metal included in the second support plate 320 are different, it is preferred that the difference in thermal expansion coefficient is 10×10 -6 The metal having a K value of less than 1000 / K is used. Thus, deformation of the stage 20 due to a difference in thermal expansion is suppressed, and thus the reliability of the stage 20 can be improved.

[0073] Although not shown, a third support plate may be provided below the second support plate 320 in the stage 20. The third support plate includes the same structure as the first support plate 310 or the second support plate 320. The third support plate may be joined to the second support plate 320 by welding, screwing, or brazing.

[0074] The shaft 330 has a hollow structure, thereby accommodating the lead wires 240 of the sheath heater 10. Furthermore, when an electrostatic chuck is provided, wiring connected to the electrostatic chuck is also accommodated in the shaft 330.

[0075] Although not shown, the shaft 330 may be connected to a rotating mechanism. By connecting the shaft 330 to the rotating mechanism, the stage 20 is rotated around the long axis of the shaft 330.

[0076] Figure 5 1 is a schematic top view showing the arrangement structure of the sheath heater 10 included in the stage 20 according to one embodiment of the present invention. Figure 5 In the figure, for the convenience of explanation, the first support plate 310 is omitted. In addition, the shaft 330 is indicated by a dotted line. Figure 6 2 is a schematic cross-sectional view showing the internal structure of the stage 20 according to one embodiment of the present invention. Specifically, Figure 6 is along Figure 5 The cross-sectional view of the stage 20 is shown along the line D1 - D2 .

[0077] like Figure 5 As shown, the stage 20 includes a first sheath heater 10-1 and a second sheath heater 10-2. The first sheath heater 10-1 and the second sheath heater 10-2 are arranged on the second support plate 320. In addition, in the following description, when the first sheath heater 10-1 and the second sheath heater 10-2 are not particularly distinguished, the first sheath heater 10-1 and the second sheath heater 10-2 are described as the sheath heater 10.

[0078] like Figure 6 As shown, a groove 321 is provided on the upper surface of the second support plate 320. The depth of the groove 321 is substantially the same as the outer diameter of the sheath heater 10. Specifically, the depth of the groove 321 is greater than 100% and less than 150% of the outer diameter of the sheath heater 10, preferably greater than 100% and less than 120%, and particularly preferably greater than 100% and less than 110%. The first sheath heater 10-1 and the second sheath heater 10-2 are configured to be buried in the groove 321.

[0079] The second support plate 320 has two through holes 322 in a region overlapping the shaft 330. In each of the first and second sheath heaters 10-1 and 10-2 disposed on the second support plate 320, the heater portion 100 is bent and inserted into the through hole 322, and the terminal portion 200 is accommodated in the shaft 330.

[0080] The connection terminal 250 of the terminal part 200 is connected to a heater power source (not shown). When power is supplied from the heater power source to the heater part 100 through the wire 240, the heater part 100 generates heat and the first support plate 310 and the second support plate 320 are heated.

[0081] As described above, the stage 20 includes the sheath heater 10 having improved heat resistance. Therefore, even in the case where the stage 20 has a structure in which the first end 111-1 of the sealed metal sheath 110 is accommodated in the shaft 330, the stage 20 can be used at high temperatures. That is, the operating temperature range of the stage 20 can be expanded by including the sheath heater 10 in the stage 20. In addition, since the first sheath heater 10-1 and the second sheath heater 10-2 can be independently controlled, the temperature of the substrate mounted on the stage 20 can be uniformly and precisely controlled.

[0082] <Modification 1>

[0083] Reference Figure 7 , a stage 20A as a modified example of the stage 20 will be described. Hereinafter, when the structure of the stage 20A is the same as that of the stage 20, the description of the structure of the stage 20A may be omitted.

[0084] Figure 7 2 is a schematic cross-sectional view showing the internal structure of a stage 20A according to an embodiment of the present invention. Figure 7 is along Figure 5 The cross-sectional view of the stage 20A is taken along the line D1 - D2 shown.

[0085] like Figure 7 As shown, a groove 311 is provided on the lower surface of the first support plate 310. The depth of the groove 311 is substantially the same as the outer diameter of the sheath heater 10. Specifically, the depth of the groove 311 is greater than 100% and less than 150% of the outer diameter of the sheath heater 10, preferably greater than 100% and less than 120%, and particularly preferably greater than 100% and less than 110%. The first sheath heater 10-1 and the second sheath heater 10-2 are configured to be buried in the groove 311.

[0086] The end of the groove 311 is provided in the region of the first support plate 310 overlapping with the shaft 330. The end of the groove 311 is communicated with the through hole 322 of the second support plate 320. Therefore, in each of the first sheath heater 10-1 and the second sheath heater 10-2 arranged on the first support plate 310, the heater portion 100 is bent and inserted into the through hole 322, and the terminal portion 200 is accommodated in the shaft 330.

[0087] As described above, the stage 20A also includes the sheath heater 10 with improved heat resistance. Therefore, the operating temperature range of the stage 20A can be expanded. In addition, since the first sheath heater 10-1 and the second sheath heater 10-2 can be independently controlled, the temperature of the substrate placed on the stage 20A can be uniformly and precisely controlled.

[0088] <Modification 2>

[0089] Reference Figure 8 , a stage 20B will be described as another modified example of the stage 20. Hereinafter, when the structure of the stage 20B is the same as that of the stage 20, the description of the structure of the stage 20B may be omitted.

[0090] Figure 8 2 is a schematic cross-sectional view showing the internal structure of the stage 20B according to one embodiment of the present invention. Specifically, Figure 8 is along Figure 5 The cross-sectional view of the stage 20B is taken along the line D1 - D2 shown.

[0091] like Figure 8 As shown, a groove 311B is provided on the lower surface of the first support plate 310. In addition, a groove 321B is provided on the upper surface of the second support plate 320. The position of the groove 311B corresponds to the position of the groove 321B. The depth of the groove 311B may be the same as or different from the depth of the groove 321B. However, the sum of the depth of the groove 311B and the depth of the groove 321B is substantially equal to the outer diameter of the sheath heater 10. Specifically, the sum of the depth of the groove 311B and the depth of the groove 321B is greater than 100% and less than 150% of the outer diameter of the sheath heater 10, preferably greater than 100% and less than 120%, and particularly preferably greater than 100% and less than 110%. The first sheath heater 10-1 and the second sheath heater 10-2 are configured to be buried in the groove 311B and the groove 321B.

[0092] A through hole 322 is provided in the region of the second support plate 320 overlapping the shaft 330. In each of the first sheath heater 10-1 and the second sheath heater 10-2 disposed between the first support plate 310 and the second support plate 320, the heater portion 100 is bent and inserted into the through hole 322, and the terminal portion 200 is accommodated in the shaft 330.

[0093] As described above, the stage 20B also includes the sheath heater 10 with improved heat resistance. Therefore, the operating temperature range of the stage 20B can be expanded. In addition, since the first sheath heater 10-1 and the second sheath heater 10-2 can be independently controlled, the temperature of the substrate placed on the stage 20B can be uniformly and precisely controlled.

[0094] <Variation 3>

[0095] Reference Fig. 9 , a stage 20C will be described as another modified example of the stage 20. Hereinafter, when the structure of the stage 20C is the same as that of the stage 20, the description of the structure of the stage 20C may be omitted.

[0096] Fig. 9 20C is a schematic top view showing the arrangement structure of the sheath heater included in the stage 20C according to one embodiment of the present invention. Fig. 9 In the figure, for the convenience of explanation, the first support plate 310 is omitted.

[0097] like Fig. 9 As shown, the stage 20C includes a first sheath heater 10 - 1 , a second sheath heater 10 - 2 , a third sheath heater 10 - 3 and a fourth sheath heater 10 - 4 . The first sheath heater 10 - 1 to the fourth sheath heater 10 - 4 are arranged on the second support plate 320 .

[0098] In the stage 20C, the second support plate 320 is divided into four areas, and four independent sheath heaters 10 are respectively arranged in the four areas. In each of the four areas, the sheath heaters 10 are arranged in a zigzag manner to form an arc. The first sheath heater 10-1 to the fourth sheath heater 10-4 have the same arrangement shape. In addition, when one of the first sheath heater 10-1 to the fourth sheath heater 10-4 is rotated 90 degrees about an axis passing through the center of the second support plate 320, it is arranged to overlap with another one of the first sheath heater 10-1 to the fourth sheath heater 10-4.

[0099] As described above, the stage 20C also includes the sheath heater 10 with improved heat resistance. Therefore, the operating temperature range of the stage 20C can be expanded. In addition, since the first to fourth sheath heaters 10-1 and 10-4 can be independently controlled, the temperature of the substrate placed on the stage 20B can be uniformly and precisely controlled for each area.

[0100] <Third Embodiment>

[0101] Reference Fig.10 , an etching device 50 according to an embodiment of the present invention will be described. The etching device 50 includes a stage 20. Therefore, the description of the same or similar structure as that described in the second embodiment may be omitted below.

[0102] Fig.10 It is a schematic cross-sectional view showing the structure of an etching device 50 according to one embodiment of the present invention.

[0103] The etching device 50 can perform dry etching on various films. The etching device 50 includes a chamber 502. The chamber 502 provides a space for etching a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0104] The chamber 502 is connected to an exhaust device 504 so that the interior of the chamber 502 can be set to a reduced pressure atmosphere. The chamber 502 is also provided with an introduction pipe 506 for introducing a reaction gas, and the reaction gas for etching is introduced into the chamber 502 through a valve 508. As the reaction gas, for example, tetrafluorocarbon (CF 4 ), octafluorocyclobutane (cC 4 F 8 ), decafluorocyclopentane (cC 5 F 10 ) or hexafluorobutadiene (C 4 F 6 ) and other fluorine-containing organic compounds.

[0105] A microwave source 512 may be provided at the upper portion of the chamber 502 via a waveguide 510. The microwave source 512 has an antenna for supplying microwaves, and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio waves (radio frequency, RF). The microwaves generated by the microwave source 512 propagate to the upper portion of the chamber 502 under the action of the waveguide 510, and are introduced into the chamber 502 through a window 514 made of quartz or ceramics. The reaction gas is plasmatized under the action of the microwaves, and the film is etched under the action of electrons, ions, or radicals contained in the plasma.

[0106] A stage 20 for placing a substrate is provided at the lower part of the chamber 502. The stage 20 is connected to a power supply 524, and high-frequency power is supplied to the stage 20, and an electric field generated by microwaves is formed in a direction perpendicular to the surface of the stage 20 and the surface of the substrate. Magnets 516, 518, and 520 may also be provided at the upper part and the side of the chamber 502. Magnets 516, 518, and 520 may be permanent magnets or electromagnets with electromagnetic coils. Under the action of magnets 516, 518, and 520, a magnetic field parallel to the stage 20 and the surface of the substrate is generated. Under the combined action of the magnetic field and the electric field generated by the microwaves, the electrons in the plasma are resonated by the Lorentz force and are bound to the stage 20 and the surface of the substrate. As a result, a high-density plasma can be generated on the surface of the substrate.

[0107] The stage 20 is also connected to a heater power supply 530 for controlling the sheath heater 10 disposed on the stage 20. The stage 20 may also be connected, as an arbitrary structure, to a power supply 526 for an electrostatic chuck for fixing a substrate on the stage 20, a temperature controller 528 for controlling the temperature of a medium circulating inside the stage 20, and a rotation control device (not shown) for rotating the stage 20.

[0108] <Fourth Embodiment>

[0109] Reference Fig.11 , a CVD apparatus 60 according to an embodiment of the present invention will be described. The CVD apparatus 60 includes a stage 20. Therefore, the description of the same or similar structure as that described in the second embodiment may be omitted below.

[0110] Fig.11 It is a schematic cross-sectional view showing the structure of a CVD apparatus 60 according to one embodiment of the present invention.

[0111] The CVD apparatus 60 has a chamber 602. The CVD apparatus 60 provides a place for chemically forming various films on a substrate by causing a chemical reaction of a reaction gas.

[0112] The chamber 602 is connected to an exhaust device 604, so that the pressure in the chamber 602 can be reduced. The chamber 602 is also provided with an introduction pipe 606 for introducing a reaction gas, and the reaction gas for film formation is introduced into the chamber 602 through a valve 608. Various gases can be used as the reaction gas according to the film to be prepared. The gas can be a liquid at room temperature. For example, by using silane, dichlorosilane, tetraethoxysilane, etc., a thin film of silicon, silicon oxide, silicon nitride, etc. can be formed. In addition, by using tungsten fluoride, trimethylaluminum, etc., a metal thin film of tungsten, aluminum, etc. can be formed.

[0113] Similar to the etching device 50, a microwave source 612 can be provided at the upper part of the chamber 602 through a waveguide 610. The microwaves generated by the microwave source 612 are introduced into the chamber 602 under the action of the waveguide 610. The reaction gas is plasmatized by the microwaves, and the chemical reaction of the gas is promoted by various active species contained in the plasma, and the product obtained by the chemical reaction is deposited on the substrate to form a thin film. As an arbitrary configuration, a magnet 644 for increasing the plasma density can be provided in the chamber 602. A stage 20 is provided at the lower part of the chamber 602, and a thin film can be deposited in a state where the substrate is placed on the stage 20. Similar to the etching device 50, magnets 616 and 618 can also be provided on the side of the chamber 602.

[0114] The stage 20 is also connected to a heater power supply 630 for controlling the sheath heater 10 provided on the stage 20. The stage 20 may also be connected, as an arbitrary structure, to a power supply 624 for supplying high-frequency power to the stage 20, a power supply 626 for an electrostatic chuck, a temperature controller 628 for controlling the temperature of a medium circulating inside the stage 20, and a rotation control device (not shown) for rotating the stage 20.

[0115] <Fifth Embodiment>

[0116] Reference Fig.12 , a sputtering device 70 according to an embodiment of the present invention will be described. The sputtering device 70 includes a stage 20. Therefore, the description of the same or similar structure as that described in the second embodiment may be omitted below.

[0117] Fig.12 It is a schematic cross-sectional view showing the structure of a sputtering device 70 according to one embodiment of the present invention.

[0118] The sputtering device 70 has a chamber 702. The sputtering device 70 provides a place where high-speed ions collide with a target and target atoms generated therefrom are deposited on a substrate.

[0119] The chamber 702 is connected to an exhaust device 704 for reducing the pressure inside the chamber 702. The chamber 702 is provided with an introduction pipe 706 and a valve 708 for introducing a sputtering gas such as argon into the chamber 702.

[0120] A target stage 710 for holding a target containing a film forming material and functioning as a cathode is provided at the bottom of the chamber 702, on which a target 712 is provided. The target stage 710 is connected to a high frequency power supply 714, and plasma can be generated in the chamber 702 by the high frequency power supply 714.

[0121] The stage 20 may be provided at the upper portion of the chamber 702. In this case, the thin film is formed in a state where the substrate is provided below the stage 20. The stage 20 is connected to a heater power supply 730, similarly to the etching device 50 and the CVD device 60. In addition, the stage 20 may be connected to a power supply 724 for supplying high-frequency power to the stage 20, a power supply 726 for an electrostatic chuck, a temperature controller 728, and a rotation control device (not shown) for rotating the stage 20.

[0122] The argon ions accelerated by the plasma generated in the chamber 702 collide with the target 712, and the atoms of the target 712 are ejected. While a shutter 716 is open, the ejected atoms splash toward the substrate disposed below the stage 20 and are deposited.

[0123] In the present embodiment, a structure in which the stage 20 is disposed at the upper portion of the chamber 702 and the target stage 710 is disposed at the lower portion of the chamber 702 is exemplified, but the present embodiment is not limited to this structure, and the sputtering device 70 may be configured in such a manner that the target 712 is located above the stage 20. Alternatively, the stage 20 may be disposed in such a manner that the main surface of the substrate is vertically arranged relative to the horizontal plane, and the target stage 710 may be disposed so as to be opposite to the main surface of the substrate.

[0124] <Sixth Embodiment>

[0125] Reference Fig.13 , a vapor deposition device 80 according to an embodiment of the present invention will be described. The vapor deposition device 80 includes a stage 20. Therefore, the description of the same or similar structure as that described in the second embodiment may be omitted below.

[0126] Fig.13 It is a schematic cross-sectional view showing the structure of a vapor deposition device 80 according to one embodiment of the present invention.

[0127] The evaporation device 80 has a chamber 802. The evaporation device 80 provides a space for evaporating a material in an evaporation source 810 and depositing the evaporated material on a substrate.

[0128] The chamber 802 is connected to an exhaust device 504 for setting the interior of the chamber 802 to a high vacuum. The chamber 802 is provided with an introduction pipe 806 for returning the chamber 802 to atmospheric pressure, and an inert gas such as nitrogen or argon is introduced into the chamber 802 through a valve 808.

[0129] The stage 20 may be provided at the upper portion of the chamber 802. The deposition of the material is performed in a state where the substrate is provided below the stage 20. The stage 20 is also connected to a heater power supply 828, similarly to the etching device 50, the CVD device 60, and the sputtering device 70. In addition, as an arbitrary configuration, the stage 20 may also be connected to a power supply 824 for an electrostatic chuck, a temperature controller 826, and a rotation control device 830 for rotating the stage 20. The stage 20 may also have a mask holder 816 for fixing the metal mask between the substrate and the evaporation source 810. Thus, the metal mask may be arranged near the substrate so that the opening of the metal mask overlaps with the region where the material is deposited.

[0130] The evaporation source 810 is provided at the lower side of the chamber, and the evaporated material is filled in the evaporation source 810. The evaporation source 810 is provided with a heater for heating the material, and the heater is controlled by the control device 812. The evaporation is started by setting the inside of the chamber 802 to a high vacuum using the exhaust device 804 and heating the evaporation source 810 to vaporize the material. When the speed of evaporation becomes constant, the deposition of the material on the substrate is started by opening the shutter 814.

[0131] As described above, the stage 20 is used in the etching device 50, CVD device 60, sputtering device 70, and evaporation device 80 described in the third embodiment to the sixth embodiment. By using the stage 20, the substrate can be uniformly heated and the heating temperature can be accurately controlled. Therefore, by using the etching device 50, CVD device 60, sputtering device 70, or evaporation device 80, various films with controlled characteristics can be uniformly formed on the substrate. In addition, in the stage 20, since the first end 111-1 of the metal sheath 110 is accommodated in the shaft 330, the degree of freedom of the configuration position of the stage 20 is improved.

[0132] As the embodiments of the present invention, the embodiments described above can be appropriately combined and implemented as long as they are not contradictory. In addition, those skilled in the art can appropriately add, delete, or design and change the constituent elements according to each embodiment, as long as they have the gist of the present invention, they are included in the scope of the present invention.

[0133] Furthermore, even if other effects are different from the effects obtained by the above-mentioned embodiments, effects that are clear from the description of this specification or that can be easily predicted by those skilled in the art can be understood as effects that can be obtained by the present invention.

[0134] (Explanation of Reference Numerals)

[0135] 10: sheath heater; 20, 20A, 20B: stage; 50: etching device; 60: CVD device; 70: sputtering device; 80: evaporation device; 100: heater portion; 110: metal sheath; 111: end portion; 120: heating wire; 130: insulating material; 140: first insulating tube; 141: first through hole; 150: sealing material; 200: terminal portion; 210: cylindrical member; 211: cylinder; 212: flange portion; 220: cover member; 221: opening portion ; 230: locking member; 240: wire; 250: connecting terminal; 260: crimping sleeve; 270: second insulating tube; 271: second through hole; 280: third insulating tube; 281: third through hole; 310: first support plate; 311, 311B: groove; 320: second support plate; 321, 321B: groove; 322: through hole; 330: shaft; 502: chamber; 504: exhaust device; 506: introduction tube; 508: valve; 510: waveguide; 512: microwave source; 5 14: window; 516: magnet; 518: magnet; 520: magnet; 524: power supply; 526: power supply; 528: temperature controller; 530: heater power supply; 602: chamber; 604: exhaust device; 606: introduction tube; 608: valve; 610: waveguide; 612: microwave source; 616: magnet; 618: magnet; 624: power supply; 626: power supply; 628: temperature controller; 630: heater power supply; 644: magnet; 702: chamber; 704: exhaust device; 7 06: inlet pipe; 708: valve; 710: target stage; 712: target; 714: high frequency power supply; 716: baffle; 724: power supply; 726: power supply; 728: temperature controller; 730: heater power supply; 802: chamber; 804: exhaust device; 806: inlet pipe; 808: valve; 810: evaporation source; 812: control device; 814: baffle; 816: mask holder; 824: power supply; 826: temperature controller; 828: heater power supply; 830: rotation control device

Claims

1. A sheath heater, characterized in that: include: Metal sheath; A heating wire, which is disposed in the metal sheath; an insulating material filled in the metal sheath to separate the metal sheath from the heating wire; A lead wire that supplies power to the heating wire; a crimping sleeve for connecting the heating wire and the lead wire extending from the end of the metal sheath; a cylindrical member covering the end of the metal sheath and provided with the crimping sleeve; as well as a cover-shaped member, which is engaged with the cylindrical member and includes an opening for inserting the lead wire, The end portion of the metal sheath comprises: A first insulating tube, comprising a first through hole for inserting the heating wire; as well as a sealing material for filling a gap between the metal sheath and the first insulating tube, The sealing material includes a ceramic adhesive.

2. The sheath heater according to claim 1, wherein: The first insulating tube includes two first through holes.

3. The sheath heater according to claim 1, wherein: The sheath heater further includes a second insulating tube, which is disposed in the cylindrical member and includes a second through hole, wherein: The crimping sleeve is disposed in the second through hole.

4. The sheath heater according to claim 3, wherein: The second insulating tube includes two second through holes.

5. The sheath heater according to claim 3, wherein: The sheath heater further includes a locking member fixed to the lead wire, The locking member does not engage with the cover member.

6. The sheath heater according to claim 5, wherein: The locking member is fixed to the lead by clamping the lead.

7. The sheath heater according to claim 3, wherein: The sheath heater further includes a third insulating tube that is disposed between the first insulating tube and the second insulating tube in the cylindrical member and includes a third through hole through which the heating wire is inserted.

8. The sheath heater according to claim 7, wherein: The outer diameter of the third insulating tube is smaller than the hole diameter of the second through hole.

9. The sheath heater according to claim 7, wherein: At least a portion of the third insulating tube extends into the second through hole.

10. The sheath heater according to claim 7, wherein: Two third insulating tubes are arranged in the cylindrical member.

11. A stage, characterized in that: include: axis; as well as The sheath heater according to any one of claims 1 to 10, The end of the metal sheath is received in the shaft.

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