Monocrystalline silicon rod resistance control method, monocrystalline silicon rod, silicon wafer and solar cell

Abstract

The invention provides a silicon single crystal rod resistance control method, a silicon single crystal rod, a silicon wafer and a solar cell. The control method comprises the following steps: obtaining phosphorus concentration and antimony concentration in a compound feed; obtaining the phosphorus concentration and the antimony concentration in the residual material in the crucible; calculating the concentration of phosphorus in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the phosphorus concentration in the re-fed material and the residual material in the crucible, and calculating the concentration of antimony in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the antimony concentration in the re-fed material and the residual material in the crucible; calculating phosphorus demand concentration according to the phosphorus concentration ratio, and calculating antimony demand concentration according to the antimony concentration ratio; calculating the doping amount of the phosphorus master alloy according to the phosphorus demanded concentration, the total weight of the full pot of the current feeding section and the concentration of the phosphorus master alloy, and calculating the antimony doping amount according to the antimony demanded concentration and the total weight of the full pot of the current feeding section. According to the control method provided by the invention, the doping amount of the phosphorus master alloy and the antimony can be accurately calculated, so that the accurate control on the resistance of the silicon single crystal rod is realized, and the silicon single crystal rod and the silicon wafer have excellent resistance uniformity.

Description

Technical Field

[0001] The present application mainly relates to the field of photovoltaic technology, and in particular to a method for controlling the resistance of a single crystal silicon rod, a single crystal silicon rod, a silicon wafer and a solar cell. Background Art

[0002] The electrical performance parameters of silicon wafers are one of the key factors that determine the conversion efficiency of solar cells. At present, the photovoltaic industry mainly improves the electrical performance parameters of silicon wafers by controlling resistivity and impurity content. Among them, resistance concentration is one of the important electrical performance parameters. Compared with conventional phosphorus-doped single crystal silicon rods, single crystal silicon rods can greatly improve the resistance concentration of silicon wafers, but the high volatility of antimony increases the difficulty of controlling resistance. Therefore, how to accurately control the resistance of single crystal silicon rods is one of the hot issues in this field. Summary of the invention

[0003] The technical problem to be solved by the present application is to provide a method for controlling the resistance of a single crystal silicon rod, a single crystal silicon rod, a silicon wafer and a solar cell. The method for controlling the resistance of a single crystal silicon rod can accurately calculate the doping amounts of phosphorus master alloy and antimony, thereby achieving precise control of the resistance of the single crystal silicon rod, and the single crystal silicon rod and the silicon wafer have excellent resistance uniformity.

[0004] In order to solve the above technical problems, the present application provides a method for controlling the resistance of a single crystal silicon rod, comprising: obtaining the phosphorus concentration and antimony concentration in the re-feed material; obtaining the phosphorus concentration and antimony concentration in the remaining material in the crucible; and calculating the concentration ratio (C ) of the phosphorus in the re-feed material and the remaining material in the crucible in the total weight of the full pot in the current feeding stage according to the phosphorus concentration in the re-feed material and the remaining material in the crucible. r磷 ), according to the antimony concentration in the re-feed and the residual material in the crucible, the concentration ratio of the antimony in the re-feed and the residual material in the crucible in the total weight of the full pot in the current feeding stage (C r锑 ); the required phosphorus concentration is calculated according to the phosphorus concentration ratio, and the required antimony concentration is calculated according to the antimony concentration ratio; the doping amount of the phosphorus master alloy is calculated according to the required phosphorus concentration, the total weight of the full pot of the current feeding section and the concentration of the phosphorus master alloy, and the antimony doping amount is calculated according to the required antimony concentration and the total weight of the full pot of the current feeding section.

[0005] In one embodiment of the present application, the phosphorus concentration in the re-feed material is an average concentration, and the method for calculating the average phosphorus concentration includes: converting the target resistance into the phosphorus concentration at the head of the single crystal silicon rod (C s磷 ); According to the formula Calculate the phosphorus concentration (C e磷 ), the k 磷 represents the effective segregation coefficient of phosphorus, the C 0磷 represents the initial phosphorus concentration, the f s 0%~95%; according to the head phosphorus concentration (Cs磷 ) and the tail phosphorus concentration (C e磷 ) to calculate the average phosphorus concentration.

[0006] In one embodiment of the present application, the antimony concentration in the re-feed material is an average concentration, and the method for calculating the average antimony concentration includes: converting the target resistance into the antimony concentration at the head of the single crystal silicon rod (C s锑 ); According to the formula Calculate the antimony concentration (C) at the tail of the single crystal silicon rod e锑 ), the k 锑 represents the effective segregation coefficient of antimony, the C 0锑 represents the initial antimony concentration, the f s is 0%~95%, the H represents the total mass transfer coefficient of antimony in the thermal field; according to the head antimony concentration (C s锑 ) and the tail antimony concentration (C e锑 ) calculate the average antimony concentration.

[0007] In one embodiment of the present application, the phosphorus concentration ratio (C r磷 ): .

[0008] In one embodiment of the present application, the antimony concentration ratio (C r锑 ): .

[0009] In one embodiment of the present application, the phosphorus demand concentration is calculated according to the following formula: , wherein the It represents the effective segregation coefficient of phosphorus.

[0010] In one embodiment of the present application, the required antimony concentration is calculated according to the following formula: , wherein the It represents the effective segregation coefficient of antimony.

[0011] On the other hand, the present application also proposes a single crystal silicon rod. During the process of drawing the single crystal silicon rod, the resistance of the single crystal silicon rod is controlled using a method as described in any of the above items, wherein the axial resistance change rate of the single crystal silicon rod is not greater than 13.6%, and / or the radial resistance change rate of the head of the single crystal silicon rod is not greater than 8%, the radial resistivity of the middle part of the single crystal silicon rod is not greater than 15%, the radial resistance change rate of the tail of the single crystal silicon rod is not greater than 10%, and / or the resistance hit rate of the single crystal silicon rod is not less than 80%.

[0012] On the other hand, the present application further provides a silicon wafer, which is cut from the single crystal silicon rod as described above.

[0013] On the other hand, the present application further provides a solar cell, wherein the substrate of the solar cell is processed from the silicon wafer as described above.

[0014] Compared with the prior art, the present application has the following advantages: the control method of the present application can accurately calculate the doping amount of phosphorus master alloy and antimony, thereby realizing precise control of the resistance of multiple rods in a single furnace, and compared with the empirical method, the control method of the present application can greatly improve the uniformity of the resistance of single crystal silicon rods. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings: Figure 1 This is a process diagram of a method for controlling the resistance of a single crystal silicon rod in one embodiment of the present application. DETAILED DESCRIPTION

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0017] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0018] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant field may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0019] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0020] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0021] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.

[0022] Flowcharts are used in the present application to illustrate the operations performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations are not necessarily performed accurately in order. On the contrary, various steps may be processed in reverse order or simultaneously. At the same time, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0023] Next, the control method of the single crystal silicon rod resistance of the present application (hereinafter referred to as “control method”), the single crystal silicon rod, the silicon wafer and the solar cell are described through embodiments.

[0024] refer to Figure 1 The flowchart of a control method in an embodiment is shown. The control method in this embodiment includes the following steps S110 to S150.

[0025] S110: Obtaining the phosphorus concentration and antimony concentration in the re-feed material; S120: Obtaining the phosphorus concentration and antimony concentration in the residual material in the crucible; S130: Calculate the concentration ratio of phosphorus in the re-feed and the remaining material in the crucible to the total weight of the full pot in the current feeding stage (C r磷 ), according to the antimony concentration in the re-feed and the remaining material in the crucible, calculate the concentration ratio of the antimony in the re-feed and the remaining material in the crucible in the total weight of the full pot in the current feeding section (C r锑 ); S140: Calculate the required phosphorus concentration according to the phosphorus concentration ratio, and calculate the required antimony concentration according to the antimony concentration ratio; S150: Calculate the doping amount of the phosphorus master alloy according to the required phosphorus concentration, the total weight of the full pot in the current feeding section and the concentration of the phosphorus master alloy, and calculate the antimony doping amount according to the required antimony concentration and the total weight of the full pot in the current feeding section.

[0026] Next, steps S110 to S150 are described in detail.

[0027] The single crystal silicon rod of the present application is a phosphorus-antimony co-doped single crystal silicon rod. In step S110, the phosphorus concentration and antimony concentration in the re-feed are obtained. Re-feed is generated during the processing of the single crystal silicon rod, and the re-feed is added into the crucible for reuse.

[0028] In one embodiment, the phosphorus concentration in the re-feed material refers to the average phosphorus concentration, and the method for calculating the average phosphorus concentration includes the following steps S111 to S113.

[0029] S111: Convert the target resistance into the phosphorus concentration (C s磷 Specifically, the target resistance (ρ) of the single crystal silicon rod is set, and the target resistance (ρ) is converted into the head phosphorus concentration (C s磷 ):

[0030] Among them, C s is the head phosphorus antimony concentration, and Z is calculated by the following formula:

[0031] in, , A0=-3.1083, A1=-3.2626, A2=-1.2196, A3=-0.13923, B1=1.0265, B2=0.38755, B3=0.041833.

[0032]

[0033] Wherein, y is the concentration ratio of phosphorus in phosphorus antimony.

[0034] S112: According to the formula Calculate the phosphorus concentration (C e磷 ), k 磷 represents the effective segregation coefficient of phosphorus, C 0磷 represents the initial phosphorus concentration, f s 0%~95%, for example, f s Take 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90% or 95%, f s =1-weight of remaining material in the crucible / weight of the upper full crucible, s , k 磷 , C 0磷 Substitute the above formula to calculate C L磷 is the tail phosphorus concentration (C e磷 ).

[0035] S113: According to the head phosphorus concentration (C s磷 ) and tail phosphorus concentration (C e磷) to calculate the average phosphorus concentration. For example, the average phosphorus concentration can be equal to the head phosphorus concentration (C s磷 ) and tail phosphorus concentration (C e磷 ) divided by 2.

[0036] In another embodiment, the antimony concentration in the re-feed material refers to the average antimony concentration, and the method for calculating the average antimony concentration includes the following steps S114 to S116.

[0037] S114: Convert the target resistance into the antimony concentration (C s锑 Specifically, the target resistance (ρ) of the single crystal silicon rod is set, and the target resistance (ρ) is converted into the head antimony concentration (C s锑 ):

[0038] Z is calculated by the following formula:

[0039]

[0040] For the explanation of the parameters in the formula, please refer to the previous text and will not be elaborated here.

[0041] S115: According to the formula Calculate the antimony concentration (C) at the tail of the single crystal silicon rod e锑 ), k 锑 represents the effective segregation coefficient of antimony, C 0锑 represents the initial antimony concentration, H represents the total mass transfer coefficient of antimony in the thermal field, and f s 0%~95%. s Take 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90% or 95%, f s =1-weight of remaining material in the crucible / weight of full crucible in the upper section. H can be determined according to the number of lead-in times, equal diameter growth time, power, etc. This application does not limit the specific method for determining H. s , k 锑 , C 0锑 Substitute H into the above formula to calculate C L锑 is the tail antimony concentration (C e锑 ).

[0042] S116: According to the head antimony concentration (C s锑 ) and tail antimony concentration (C e锑 ) to calculate the average antimony concentration. For example, the average antimony concentration can be equal to the head antimony concentration (C s锑 ) and tail antimony concentration (C e锑 ) divided by 2.

[0043] In step S120, the phosphorus concentration and antimony concentration in the residual material in the crucible are obtained. Specifically, the tail phosphorus concentration (C e磷 ) and tail antimony concentration (C e锑 ) are respectively regarded as the phosphorus concentration and antimony concentration in the residual material in the crucible, because, in the process of straightening the single crystal silicon rod, the phosphorus concentration at the tail of the single crystal silicon rod is basically equal to the phosphorus concentration in the residual material in the crucible, and the antimony concentration at the tail is basically equal to the antimony concentration in the residual material in the crucible.

[0044] In step S130, the concentration ratio (C r磷 The phosphorus concentration ratio (C r磷 ):

[0045] According to the antimony concentration in the re-feed and the remaining material in the crucible, calculate the concentration ratio of the antimony in the re-feed and the remaining material in the crucible in the total weight of the full pot in the current feeding section (C r锑 The antimony concentration ratio (C r锑 ):

[0046] Among them, the phosphorus content in the re-feed is equal to the sum of the phosphorus content in the re-feed of different resistance gears, and the phosphorus content in the re-feed of a certain resistance gear is equal to the weight of the re-feed of the resistance gear multiplied by the phosphorus concentration in the re-feed. Similarly, the antimony content in the re-feed is equal to the sum of the antimony content in the re-feed of different resistance gears, and the antimony content in the re-feed of a certain resistance gear is equal to the weight of the re-feed of the resistance gear multiplied by the antimony concentration in the re-feed.

[0047] Here, the meaning of "the total weight of the full pot in the current feeding section" is explained in conjunction with the process of pulling single crystal silicon rods. First, "re-feeding" will be generated during the production process of the previous section of single crystal silicon rods, and "residual material in the crucible" refers to the remaining raw materials in the crucible after the previous section of single crystal silicon rods are pulled; then, after completing the pulling of the previous section of single crystal silicon rods, the current single crystal silicon rod is started to be pulled. In this process, re-feeding will be added to the crucible, and the remaining material in the crucible will also be used as the raw material for the current section; then, "the total weight of the full pot in the current feeding section" refers to the weight of the raw materials in the crucible for pulling the current section of single crystal silicon rods.

[0048] In step S140, the phosphorus required concentration is calculated according to the phosphorus concentration ratio, and the antimony required concentration is calculated according to the antimony concentration ratio. The phosphorus required concentration can be calculated according to the following formula:

[0049] in, It represents the effective segregation coefficient of phosphorus.

[0050] The required antimony concentration can be calculated according to the following formula:

[0051] in, It represents the effective segregation coefficient of antimony.

[0052] In step S150, the doping amount (W1) of the phosphorus master alloy is calculated according to the required phosphorus concentration, the total weight of the full pot in the current feeding stage and the concentration of the phosphorus master alloy. Specifically, the formula for calculating the doping amount (W1) of the phosphorus master alloy is as follows:

[0053] The unit of the doping amount (W1) of the phosphorus master alloy calculated by the above formula is kilogram.

[0054] The antimony doping amount (W2) is calculated based on the required antimony concentration and the total weight of the full pot in the current feeding section. Specifically, the formula for calculating the antimony doping amount (W2) is as follows:

[0055] The unit of the antimony doping amount (W2) calculated by the above formula is kilogram.

[0056] The above-mentioned control method of the present application can accurately calculate the doping amount of phosphorus master alloy and antimony, so as to realize the precise control of the resistance of multiple rods in a single furnace. Compared with the empirical method, the control method of the present application can greatly improve the uniformity of the resistance of the single crystal silicon rod. The resistance of the single crystal silicon rod is controlled by the control method described above, and the resistance uniformity of the obtained single crystal silicon rod is as follows: the axial resistance change rate of the single crystal silicon rod is not more than 13.6%, for example, the axial resistance change rate is 6%, 8%, 10% or 12%, and the axial resistance change rate can refer to: the ratio of the difference between the head resistance and the tail resistance to the head resistance, that is, (head resistance-tail resistance) / head resistance). And / or, at the head position of the single crystal silicon rod, the radial resistance change rate is not greater than 8%, for example, the radial resistance change rate is 4% or 6%; at the middle position of the single crystal silicon rod, the radial resistance rate is not greater than 15%, for example, the radial resistance rate is 4%, 6%, 8%, 10%, 12% or 14%; at the tail position of the single crystal silicon rod, the radial resistance change rate is not greater than 10%, for example, the radial resistance change rate is 4%, 6% or 8%. The above radial resistance change rate may refer to: in the radial direction of the same cross section of the single crystal silicon rod, the ratio of the difference between the edge resistance and the center resistance to the center resistance, that is, (edge ​​resistance-center resistance) / center resistance. And or, the resistance hit rate of the single crystal silicon rod is not less than 80%, for example, the resistance hit rate is 85%, 90% or 95%. "Resistance hit rate" refers to the proportion (i.e., m / n) of a batch of single crystal silicon rods (assuming n rods) that fall within a predetermined resistance range (assuming [a, b]). The resistance here may refer to the head resistance, and a and b can be set according to actual needs. In one embodiment, a resistance within a numerical range of plus or minus 0.1Ω of the target resistance is considered a hit.

[0057] On the other hand, the present application also proposes a single crystal silicon rod, a silicon wafer and a solar cell. During the process of drawing the single crystal silicon rod, the resistance of the single crystal silicon rod is controlled using the method described above, the silicon wafer is cut from the single crystal silicon rod described above, and the substrate of the solar cell is processed from the silicon wafer described above.

[0058] The basic concepts have been described above. Obviously, for those skilled in the art, the above application disclosure is only an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0059] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0060] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more application embodiments, in the above description of the embodiments of this application, multiple features are sometimes merged into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0061] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used for the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which can be changed according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the method of general digit retention. Although the numerical domains and parameters used to confirm the breadth of the range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0062] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions may be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A method for controlling the resistance of a single crystal silicon rod, characterized in that: include: Obtaining phosphorus concentration and antimony concentration in the re-feed; Obtain the phosphorus concentration and antimony concentration in the residual material in the crucible; According to the phosphorus concentration in the re-feed and the residual material in the crucible, the concentration ratio (C r磷 ), according to the antimony concentration in the re-feed and the residual material in the crucible, the concentration ratio of the antimony in the re-feed and the residual material in the crucible in the total weight of the full pot in the current feeding stage (C r锑 ); Calculate the required phosphorus concentration according to the phosphorus concentration ratio, and calculate the required antimony concentration according to the antimony concentration ratio; The doping amount of the phosphorus master alloy is calculated according to the required phosphorus concentration, the total weight of the full pot in the current feeding section and the concentration of the phosphorus master alloy, and the antimony doping amount is calculated according to the required antimony concentration and the total weight of the full pot in the current feeding section.

2. The control method according to claim 1, characterized in that: The phosphorus concentration in the re-feed material is an average concentration, and the method for calculating the average phosphorus concentration includes: The target resistance is converted into the phosphorus concentration at the head of the single crystal silicon rod (C s磷 ); According to the formula Calculate the phosphorus concentration (C e磷 ), the k 磷 represents the effective segregation coefficient of phosphorus, the C 0磷 represents the initial phosphorus concentration, the f s 0%~95%; According to the head phosphorus concentration (C s磷 ) and the tail phosphorus concentration (C e磷 ) to calculate the average phosphorus concentration.

3. The control method according to claim 1, characterized in that: The antimony concentration in the re-feed material is an average concentration, and the method for calculating the average antimony concentration includes: The target resistance is converted into the antimony concentration at the head of the single crystal silicon rod (C s锑 ); According to the formula Calculate the antimony concentration (C) at the tail of the single crystal silicon rod e锑 ), the k 锑 represents the effective segregation coefficient of antimony, the C 0锑 represents the initial antimony concentration, the f s 0%~95%, where H represents the total mass transfer coefficient of antimony in the thermal field; According to the head antimony concentration (C s锑 ) and the tail antimony concentration (C e锑 ) to calculate the average antimony concentration.

4. The control method according to claim 1, characterized in that: The phosphorus concentration ratio (C r磷 ): .

5. The control method according to claim 1, characterized in that: The antimony concentration ratio (C r锑 ): .

6. The control method according to claim 1, characterized in that: The phosphorus demand concentration is calculated according to the following formula: , wherein the It represents the effective segregation coefficient of phosphorus.

7. The control method according to claim 1, characterized in that: The required antimony concentration is calculated according to the following formula: , wherein the It represents the effective segregation coefficient of antimony.

8. A single crystal silicon rod, characterized in that: During the process of drawing the single crystal silicon rod, the resistance of the single crystal silicon rod is controlled using the method according to any one of claims 1 to 7, wherein the axial resistance change rate of the single crystal silicon rod is not greater than 13.6%, and / or the radial resistance change rate of the head of the single crystal silicon rod is not greater than 8%, the radial resistivity of the middle of the single crystal silicon rod is not greater than 15%, the radial resistance change rate of the tail of the single crystal silicon rod is not greater than 10%, and / or the resistance hit rate of the single crystal silicon rod is not less than 80%.

9. A silicon wafer, characterized in that: The silicon wafer is cut from the single crystal silicon rod as claimed in claim 8.

10. A solar cell, characterized in that: The substrate of the solar cell is processed from the silicon wafer as claimed in claim 9.

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