MIP chip structure, process method thereof and display device

Abstract

The invention relates to the technical field of LEDs, in particular to an MIP chip structure, a technological method thereof and a display device.The method comprises the steps that firstly, a substrate is provided, then the whole substrate is coated with photoresist, and a metal wiring pattern is formed by means of a mask in an exposure, development and etching mode; a layer of metal is evaporated on the metal wiring pattern, and metal wiring can be formed after the photoresist is removed; bonding and connecting a chip with the same emergent ray to the metal wire, and coating a flat adhesive layer on the whole layer after the chip bonding is completed, so as to complete chip packaging; repeating the steps for three times, manufacturing a metal wiring pattern, forming metal wiring, bonding a chip with one emergent ray, coating a flat glue layer, forming three layers of metal wiring which are spaced by a certain distance in the vertical direction and of which one ends are connected together, and bonding and connecting each layer of metal wiring with the chip with the same emergent ray; the chips with different emergent light rays are vertically laminated, so that the overall size of the chips is effectively reduced, and a smaller-size MIP chip structure is realized.

Description

Technical Field

[0001] The present invention relates to the field of LED technology, and in particular to a MIP chip structure and a process method thereof, and a display device. Background Art

[0002] It is an inevitable trend for LED direct display technology to enter micro LED. The LED crystal size required by micro-pitch LED direct display products is getting smaller and smaller. With the advancement of LED technology and the improvement of luminous efficiency, smaller LED crystal particles can be used to meet the screen brightness requirements, so that the cost can be greatly reduced. However, there are still many problems in the commercial use of Micro. How to solve the yield of MicroLED, how to solve the uneven wavelength of MicroLED, and how to solve the full color of MicroLED are all problems that MicroLED urgently needs to solve. The introduction of MIP technology can effectively solve such problems. MIP integrates MicroLED on a substrate and leads to a pad package through metal wiring, so that MicroLED can be applied to products. However, due to processes such as lead wires, the main size of MIP is between the size of RGB MiniLED and RGB MicroLED directly applied. At present, how to reduce the size of MIP is a problem that must be solved to promote the expansion of MicroLED application scenarios. Summary of the invention

[0003] The object of the present invention is to provide a MIP chip structure and a process method thereof, and a display device, so as to reduce the size of the MIP chip.

[0004] In order to achieve the above purpose, the technical solution adopted by the embodiment of the present invention is as follows:

[0005] In the first aspect, an embodiment of the present invention provides a MIP chip structure, which includes: a substrate; metal wiring, which is arranged on the substrate, and the metal wiring includes a first metal wiring, a second metal wiring and a third metal wiring, and the first metal wiring, the second metal wiring and the third metal wiring are arranged in pairs at a certain distance in the vertical direction and one end of each of the first metal wiring and the third metal wiring are connected together; a plurality of chips with different emitting light rays, and the chips with the same emitting light rays are respectively bonded to the first metal wiring, the second metal wiring and the third metal wiring.

[0006] In a second aspect, an embodiment of the present invention further provides a process method for a MIP chip structure, the method comprising: providing a substrate; coating the entire substrate with photoresist and etching a metal wiring pattern; evaporating a layer of metal, and removing the photoresist to form a metal wiring; bonding multiple chips with the same outgoing light to the metal wiring, repeating the above steps to form three layers of metal wiring spaced a certain distance apart in the vertical direction and connected together at one end, each layer of metal wiring is bonded to chips with different outgoing light.

[0007] In a third aspect, an embodiment of the present invention further provides a display device, wherein the display device includes the above-mentioned MIP chip structure.

[0008] An MIP chip structure and a process method thereof, as well as a display device, provided in an embodiment of the present invention, firstly provide a substrate, then coat the entire substrate with photoresist, and form a metal wiring pattern by means of a mask plate through exposure, development and etching; evaporate a layer of metal on the metal wiring pattern, and after removing the photoresist, a metal wiring can be formed; bond a chip with the same outgoing light to the metal wiring, and after completing chip bonding, coat the entire layer with a flat glue layer to complete chip packaging; repeat the above steps three times to make a metal wiring pattern, form metal wiring, bond chips with the same outgoing light, and coat a flat glue layer to form three layers of metal wiring spaced a certain distance in a vertical direction and connected together at one end, and each layer of metal wiring is bonded to the chip with the same outgoing light; because the chips with different outgoing light are vertically stacked, the overall size of the chip is effectively reduced, and a smaller-sized MIP chip structure is achieved.

[0009] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0011] Figure 1 A schematic flow chart of a process method for a MIP chip structure provided by an embodiment of the present invention is shown.

[0012] Figure 2 A schematic structural diagram of a substrate provided by an embodiment of the present invention is shown.

[0013] Figure 3 A schematic diagram of forming a metal routing pattern provided by an embodiment of the present invention is shown.

[0014] Figure 4 A schematic diagram of forming a first metal wiring provided by an embodiment of the present invention is shown.

[0015] Figure 5 A schematic diagram of R chip bonding provided by an embodiment of the present invention is shown.

[0016] Figure 6 A schematic diagram of forming a flat glue layer provided by an embodiment of the present invention is shown.

[0017] Figure 7 A schematic diagram of forming a second metal wiring provided by an embodiment of the present invention is shown.

[0018] Figure 8 A schematic diagram of G chip bonding provided by an embodiment of the present invention is shown.

[0019] Fig. 9 A schematic diagram of forming a flat glue layer provided by an embodiment of the present invention is shown.

[0020] Fig.10 A schematic diagram of forming a blue light absorbing film provided by an embodiment of the present invention is shown.

[0021] Fig.11 A schematic diagram of forming a third metal wiring provided by an embodiment of the present invention is shown.

[0022] Fig.12 A schematic diagram of B chip bonding provided by an embodiment of the present invention is shown.

[0023] Fig.13 A schematic diagram of the arrangement of RGB chips provided by an embodiment of the present invention is shown.

[0024] Fig.14 A schematic diagram of a metal wiring arrangement method provided by an embodiment of the present invention is shown.

[0025] Fig.15 A schematic diagram of another metal wiring arrangement method provided by an embodiment of the present invention is shown.

[0026] Fig.16 A schematic structural diagram of a MIP chip structure provided by an embodiment of the present invention is shown.

[0027] Diagram:

[0028] 300 - MIP chip structure; 310 - substrate; 320 - first metal wiring; 330 - second metal wiring; 340 - third metal wiring; 350 - chip with different emitting light; 360 - flat glue layer; 370 - blue light absorbing film. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The components of the embodiments of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents the selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present invention.

[0030] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. At the same time, in the description of the present invention, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0031] MIP (MicroLED in package): It is a structure that packages R (red light), G (green light), and B (blue light) with a single size of less than 50um together as a group. That is to say, the MIP structure is a structure obtained by selecting three MicroLED chips of red, green, and blue colors and packaging them (multiple chips can also be packaged, not limited to 3). Since the size of a single MicroLED chip is too small, it is extremely difficult to transfer it to the driver backplane through van der Waals force or directly transfer it to the driver backplane by laser; but MicroLED performs better in light output performance and effect than miniLED. In order to improve the transfer yield and fit the current process status, multiple MicroLEDs are packaged into a MIP structure, and then transferred by adsorption or adhesion through transfer equipment, which not only ensures the good light efficiency performance of MicroLED, but also improves the transfer efficiency.

[0032] Combination Figure 1 , the implementation process of the process method of the MIP chip structure is described in detail below:

[0033] S110, providing a substrate.

[0034] like Figure 2 As shown, a substrate 310 is provided. The substrate 310 may be a sapphire substrate, or a silicon substrate, a semiconductor material substrate, a glass substrate, or other carrier substrate. Furthermore, the material of the sapphire substrate includes Al2O3.

[0035] S120, coating the entire substrate with photoresist and etching out a metal wiring pattern.

[0036] like Figure 3 As shown, a photoresist is coated on the substrate 310 in a uniform coating manner. It should be noted that the photoresist includes positive photoresist and negative photoresist. The portion of the positive photoresist that has been exposed to light can be removed by a solution, while the negative photoresist is the opposite, and the portion that has not been exposed to light can be removed by a solution. A mask is then placed above the substrate, and the portion of the photoresist that needs to be removed is removed by exposure, development, and solution removal to obtain a metal wiring pattern, which is a pattern formed by the retained portion of the photoresist.

[0037] S130, vapor depositing a layer of metal and removing the photoresist to form a first metal wiring.

[0038] like Figure 4 As described above, a layer of metal is vapor-deposited on the entire surface of the retained portion of the photoresist, and the vapor-deposited metal is evenly distributed along the metal wiring pattern. After the vapor deposition is completed, all the photoresist is dissolved and removed by solution removal, or all the photoresist is removed by laser stripping, so that the first metal wiring 320 can be formed on the substrate. Further, the first metal wiring 320 includes a first N-type electrode and a first P-type electrode, and the first N-type electrode and the first P-type electrode are staggered and are not electrically connected to each other.

[0039] S140, bonding the chip with the same outgoing light to the first metal wiring.

[0040] It should be noted that chips with the same emitting light are chips with the same emitting color. In the embodiment of the present invention, after the wafer is epitaxially formed and cut into multiple chips, the wafer is directly transferred and bonded to the substrate. On the one hand, the transfer efficiency is improved, and on the other hand, the color of the chips transferred in a single time is consistent.

[0041] like Figure 5 As shown, in an embodiment of the present invention, the entire surface of a wafer with a whole panel of red light (R) chips is first bonded to a first metal wiring, that is, the two electrodes of the red light chip are respectively bonded to a first N-type electrode and a first P-type electrode of the first metal wiring. After bonding, the entire surface of the wafer substrate is peeled off by laser.

[0042] It should be noted that Figure 5 The structure shown is only an example and not a limitation. For example, a light-emitting chip of another light-emitting color, such as a blue light chip, may also be bonded to the first metal wiring.

[0043] S150, coating a flat adhesive layer, wherein the flat adhesive layer wraps and covers the chips with the same outgoing light.

[0044] like Figure 6As shown, after the red light chip is bonded, a flat glue layer 360 is coated on the entire surface by means of glue leveling. The flat glue layer 360 wraps the red light chip, and the thickness of the flat glue layer 360 is 2-5um higher than the outer surface of the red light chip. The provision of the flat glue layer can protect the red light chip from displacement or scratching, and on the other hand, it also ensures that the upper surface of the entire layer of red light chip is flattened to facilitate the production of the next layer of process.

[0045] S160, continue to coat the entire board with photoresist on the flat glue layer and etch out a metal wiring pattern, then evaporate a layer of metal, and remove the photoresist to form a second metal wiring.

[0046] like Figure 7 As shown, continue to apply photoresist on the solidified flat glue layer 360, and remove the glue in the manner described in S120 to obtain a metal wiring pattern. At the same time, the flat glue layer 360 will also be etched to open holes to expose part of the first metal wiring 320. Then, a layer of metal is evaporated on the entire surface, and the metal formed by the evaporation will be evenly distributed along the metal wiring pattern and the opening. After the evaporation is completed, all the photoresist is dissolved and removed by solution removal, or all the photoresist is removed by laser stripping, and a second metal wiring 330 can be formed on the substrate. The second metal wiring 330 is connected to the first metal wiring 320 through at least one end of the metal deposited in the opening. Further, the second metal wiring 330 includes a second N-type electrode and a second P-type electrode, and the second N-type electrode and the second P-type electrode are staggered and are not electrically connected to each other. Furthermore, the second metal wiring 330 is connected to the first metal wiring 320 through at least one end of the metal deposited in the opening, such that: the second N-type electrode of the second metal wiring 330 is connected to the first N-type electrode of the first metal wiring 320, or the second P-type electrode of the second metal wiring 330 is connected to the first P-type electrode of the first metal wiring 320.

[0047] S170, bonding another chip with the same outgoing light to the second metal wiring.

[0048] like Figure 8 As shown, a wafer carrying a full board of green light (G) chips is bonded to the second metal wiring 330, that is, the two electrodes of the green light chip are bonded to the second N-type electrode and the second P-type electrode of the second metal wiring 330 respectively. After bonding, the wafer substrate is peeled off by laser.

[0049] It should be noted that Figure 8 The structure shown is only an example and not a limitation. For example, the second metal wiring 330 may also be bonded with a light emitting chip of other light emitting colors, such as a blue light chip or a red light chip.

[0050] S180, coating a flat adhesive layer, wherein the flat adhesive layer wraps and covers another chip with the same emitting light.

[0051] like Fig. 9 As shown, after the green chip is bonded, a flat glue layer 360 is coated on the entire surface by means of glue leveling. The flat glue layer 360 wraps the green chip, and the thickness of the flat glue layer 360 is 2-5um higher than the outer surface of the green chip. The provision of the flat glue layer 360 can protect the green chip from displacement or scratching, and on the other hand, it also ensures that the upper surface of the entire layer of green chip is flat, so as to facilitate the production of the next layer of process.

[0052] S190, continue to form a blue light absorbing film on the flat adhesive layer.

[0053] like Fig.10 As shown, a layer of blue light absorbing film 370 is further formed by uniformly coating the flat adhesive layer 360 that wraps the green light chip after solidification. It should be noted that the wavelength range of red light is 622-760nm, the wavelength range of green light is 492-577nm, and the wavelength range of blue light is 435-450nm. It can be seen that blue light is a short wavelength, and red light and green light are long wavelengths. Short-wavelength blue light can easily excite the green light chip or the red light chip to emit light. On the contrary, the red light or green light emitted by the red light chip or the green light chip is a long wavelength, which is not easy to excite the blue light chip to emit light. After the green chip is bonded, the process will be repeated to continue bonding the blue chip. In order to prevent the downward-emitted light from erroneously triggering the green chip or the red chip to emit light when the blue chip emits light, thereby affecting the display effect, a blue light absorption film 370 is formed on the flat adhesive layer 360 that wraps the green chip before forming the metal wiring for bonding the blue chip. This is to absorb the downward-emitted light when the blue chip emits light, thereby preventing the green chip or the red chip from erroneously triggering the light.

[0054] S200, continue to coat the blue light absorbing film with photoresist on the entire board and etch out a metal wiring pattern, then evaporate a layer of metal, and remove the photoresist to form a third metal wiring.

[0055] like Fig.11As shown, continue to apply photoresist on the cured blue light absorbing film 370, and remove the glue in the manner described in S120 to obtain a metal wiring pattern. At the same time, the blue light absorbing film 370 and the flat glue layer 360 that wraps the green light chip will be etched to open holes to expose part of the second metal wiring 330. Then, a layer of metal is evaporated on the entire surface, and the metal formed by the evaporation will be evenly distributed along the metal wiring pattern and the opening. After the evaporation is completed, all the photoresist is dissolved and removed by solution removal, or all the photoresist is removed by laser stripping, and the third metal wiring 340 can be formed on the substrate. The third metal wiring 340 is connected to the second metal wiring 330 through at least one end of the metal deposited in the opening. Further, the third metal wiring 340 includes a third N-type electrode and a third P-type electrode, and the third N-type electrode and the third P-type electrode are staggered and are not electrically connected to each other. Furthermore, the third metal wiring 340 may be connected to the second metal wiring 330 through at least one end of the metal deposited in the opening: the third N-type electrode of the third metal wiring 340 is connected to the second N-type electrode of the second metal wiring 330, or the third P-type electrode of the third metal wiring 340 is connected to the second P-type electrode of the second metal wiring 330. It should be noted that the first metal wiring 320, the second metal wiring 330 and the third metal wiring 340 either have the first N-type electrode, the second N-type electrode and the third N-type electrode connected together to achieve a common N-electrode connection, or have the first P-type electrode, the second P-type electrode and the third P-type electrode connected together to achieve a common P-electrode connection.

[0056] S210, bonding another chip with the same outgoing light to the third metal wiring.

[0057] like Fig.12 As shown, a wafer carrying a full board of blue light (B) chips is bonded to the third metal wiring 340, that is, the two electrodes of the blue light chip are respectively bonded to the third N-type electrode and the third P-type electrode of the third metal wiring 340. After bonding, the wafer substrate is peeled off by laser.

[0058] It should be noted that Fig.12 The structure shown is only an example and not a limitation. For example, the third metal wiring 340 may also be bonded with a light emitting chip of another light emitting color, such as a green light chip or a red light chip.

[0059] In the embodiment of the present invention, an MIP structure formed by packaging chips of three different colors, RGB, is exemplified. It is easy to understand that the MIP structure can also be set to not limited to three chips and three colors according to actual needs, such as the MIP structure can be set to RGBW (red, green, blue, and white). Furthermore, the MIP chip structure provided in the embodiment of the present invention is manufactured by a stacking process, and RGB is stacked in the vertical direction. The MIP chip structure can be reduced to less than 200um, and can be used to make display screens with smaller pitches.

[0060] In addition, in the MIP chip structure, the RGB chips can be staggered in the vertical direction (such as Fig.12 ), or in the same vertical line (as shown in Fig.13 As shown in the figure), its arrangement in the vertical direction can be adjusted according to actual needs.

[0061] Furthermore, in the embodiment of the invention, the first metal wiring 320, the second metal wiring 330 and the third metal wiring 340 are arranged in a variety of ways, such as Fig.14 As shown in FIG. 1 , the P-type electrodes of the first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 are arranged at respective corners of the substrate, while the N-type electrodes thereof are arranged as common electrodes and arranged separately at a corner of the substrate, and the RGB chip is bonded to the P-type electrodes and the N-type electrodes of the first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 respectively; another example is Fig.15 As shown, the P-type electrodes of the first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 are all located on the same side and on the same vertical line, and their N-type electrodes are arranged as common electrodes and are located on the other side opposite to the P-type electrodes, and the RGB chip is bonded to the P-type electrodes and N-type electrodes of the first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 accordingly. In the embodiment of the present invention, the common N-type electrode is used as an example, and the first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 can also be arranged as a common P-type electrode, and their specific arrangement is not limited to the above two examples, and other common N-type electrode or common P-type electrode wiring methods are all acceptable.

[0062] Please refer to Fig.16 FIG. 1 is a schematic diagram of a MIP chip structure 300 provided in an embodiment of the present invention. The MIP chip structure 300 includes:

[0063] The substrate 310 may be a sapphire substrate, or may be a silicon substrate, a semiconductor material substrate, a glass substrate, or other supporting substrate. When it is a sapphire substrate, its material includes Al2O3.

[0064] Metal wiring, the metal wiring includes a first metal wiring 320, a second metal wiring 330, and a third metal wiring 340. The first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 are located in a vertical direction and are spaced a certain distance apart from each other. The space formed by the "spaced a certain distance apart" is used to accommodate the chip corresponding to the outgoing light bonded after each layer of metal wiring is formed, and the flat glue layer that wraps the chip. The first metal wiring 320 is arranged on the substrate 310, and includes a first N-type electrode and a first P-type electrode. The second metal wiring 330 is arranged vertically above the first metal wiring 320 at a certain distance, and the second metal wiring 330 includes a second N-type electrode and a second P-type electrode; the third metal wiring 340 is arranged vertically above the second metal wiring 330 at a certain distance, and the third metal wiring includes a third N-type electrode and a third P-type electrode. In an embodiment of the present invention, one end of the first metal wiring 320, the second metal wiring 330, and the third metal wiring 340 are connected together, that is, the first N-type electrode, the second N-type electrode, and the third N-type electrode are connected together, or the first P-type electrode, the second P-type electrode, and the third P-type electrode are connected together to form a common electrode setting.

[0065] In addition, in the embodiment of the invention, the first metal wiring, the second metal wiring and the third metal wiring have multiple arrangements, one of which is as follows: Fig.14 As shown in FIG. 1 , the P-type electrodes of the first metal wiring, the second metal wiring, and the third metal wiring are arranged at respective corners of the substrate, and the N-type electrodes thereof are arranged as common electrodes and arranged separately at a corner of the substrate, and the RGB chip is bonded to the P-type electrodes and the N-type electrodes of the first metal wiring, the second metal wiring, and the third metal wiring, respectively; another example is Fig.15 As shown, the P-type electrodes of the first metal wiring, the second metal wiring, and the third metal wiring are all located on the same side and on the same vertical line, and their N-type electrodes are arranged as common electrodes and are located on the other side opposite to the P-type electrodes, and the RGB chip is bonded to the P-type electrodes and N-type electrodes of the first metal wiring, the second metal wiring, and the third metal wiring accordingly. In the embodiment of the present invention, the common N-type electrode is used as an example, and the first metal wiring, the second metal wiring, and the third metal wiring can also be arranged as a common P-type electrode, and their specific arrangement is not limited to the above two examples, and other common N-type electrode or common P-type electrode wiring methods are all acceptable.

[0066] Chips 350 with different emitting light, flat glue layer 360 and blue light absorption film 370. In the embodiment of the present invention, the chips 350 with different emitting light include RGB three-color chips. After the first metal wiring 320 is formed, the R chip is bonded to the first N-type electrode and the first P-type electrode of the first metal wiring 320; then a flat glue layer 360 is formed to wrap and cover the R chip. Repeat the above steps. After the second metal wiring 330 is formed, the G chip is bonded to the second N-type electrode and the second P-type electrode of the second metal wiring 330, and a flat glue layer 360 is formed to wrap and cover the G chip. The thickness of the flat glue layer 360 is 2-5um higher than the outer surface of the chip. The flat glue layer 360 can protect the chip and prevent the chip from displacement or scratching on the one hand, and on the other hand, it also ensures that the surface of the entire chip is flattened to facilitate the production of the next layer of process.

[0067] Then, a blue light absorbing film 370 is formed on the flat adhesive layer 360 that wraps and covers the G chip. It should be noted that the wavelength range of red light is: 622-760nm, the wavelength range of green light is: 492-577nm, and the wavelength range of blue light is: 435-450nm. It can be seen that blue light is a short wavelength, and red light and green light are long wavelengths. Short-wavelength blue light is easy to excite the green light chip or the red light chip to emit light. On the contrary, the red light or green light emitted by the red light chip or the green light chip is a long wavelength, which is not easy to excite the blue light chip to emit light. Since the process will be repeated after the green light chip is bonded, the blue light chip will continue to be bonded. In order to avoid the blue light chip emitting light, the downwardly emitted light will mistakenly trigger the green light chip or the red light chip to emit light, thereby affecting the display effect, before forming the metal wiring for bonding the blue light chip, a blue light absorbing film is first formed on the flat adhesive layer that wraps the green light chip, so as to absorb the downwardly emitted light when the blue light chip emits light, so as to avoid mistakenly triggering the green light chip or the red light chip to emit light.

[0068] Furthermore, a third metal wiring 340 is formed on the blue light absorbing film 370 , and the B chip is bonded to the third N-type electrode and the third P-type electrode of the third metal wiring 340 .

[0069] It should be noted that in the MIP chip structure, the RGB chips can be staggered in the vertical direction (e.g. Fig.12 ), or in the same vertical line (as shown in Fig.13 As shown in the figure, the arrangement in the vertical direction can be adjusted according to actual needs. Since the MIP chip structure adopts a stacked design, the chip size can be reduced to less than 200um, and can be used to make display screens with smaller pitches of P0.2-P0.4, and its application range is wider.

[0070] In addition, an embodiment of the present invention further provides a display device, which includes the MIP chip structure, that is, the MIP chip structure is bonded to the driving substrate in the display device for displaying light. It is easy to understand that the display device can be, but is not limited to, display devices such as computers, televisions, and outdoor display screens.

[0071] In summary, an MIP chip structure and its process method and a display device provided by an embodiment of the present invention first provide a substrate, then coat the entire substrate with photoresist, and form a metal wiring pattern by means of a mask plate through exposure, development and etching; evaporate a layer of metal on the metal wiring pattern, and after removing the photoresist, a metal wiring can be formed; the chip with the same outgoing light is bonded to the metal wiring, and after the chip bonding is completed, a flat glue layer is coated on the entire layer to complete the chip packaging; repeat the above steps three times to make a metal wiring pattern, form metal wiring, bond chips with the same outgoing light, and coat a flat glue layer to form three layers of metal wiring spaced a certain distance in the vertical direction and connected together at one end, and each layer of metal wiring is bonded to the chip with the same outgoing light; since the chips with different outgoing light are vertically stacked, the overall size of the chip is effectively reduced, and a smaller MIP chip structure is achieved.

[0072] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0073] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention. It should be noted that similar numbers and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0074] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A MIP chip structure, characterized in that: The MIP chip structure comprises: substrate; Metal wiring, the metal wiring is arranged on the substrate, the metal wiring includes a first metal wiring, a second metal wiring and a third metal wiring, the first metal wiring, the second metal wiring and the third metal wiring are arranged at a certain distance in a vertical direction and one end of each of the first metal wiring, the second metal wiring and the third metal wiring are connected together; A plurality of chips with different emitting light rays and a chip with the same emitting light ray are respectively bonded and connected to the first metal wiring, the second metal wiring and the third metal wiring.

2. The MIP chip structure according to claim 1, characterized in that: The first metal wiring is disposed on the substrate, and the first metal wiring includes a first N-type electrode and a first P-type electrode; The second metal wiring is arranged vertically above the first metal wiring at a certain distance, and the second metal wiring includes a second N-type electrode and a second P-type electrode; The third metal wiring is arranged vertically above the second metal wiring at a certain distance, and the third metal wiring includes a third N-type electrode and a third P-type electrode; The first N-type electrode, the second N-type electrode, and the third N-type electrode are connected together, or the first P-type electrode, the second P-type electrode, and the third P-type electrode are connected together.

3. The MIP chip structure according to claim 2, characterized in that: The chips with different light outputs include a red light chip, a green light chip and a blue light chip; The two electrodes of the red light chip are respectively bonded and electrically connected to the first N-type electrode and the first P-type electrode of the first metal wiring; The two electrodes of the green light chip are respectively bonded and electrically connected to the second N-type electrode and the second P-type electrode of the second metal wiring; The two electrodes of the blue light chip are respectively bonded and electrically connected to the third N-type electrode and the third P-type electrode of the third metal wiring.

4. The MIP chip structure according to any one of claims 1 to 3, characterized in that: Also includes a flat glue layer, The flat adhesive layer is evenly spread around the chips with different emitting light beams and wraps the chips with different emitting light beams.

5. The MIP chip structure according to claim 4, characterized in that: The flat glue layer is 2-5 um higher than the outer surface of the chip with different emitting light rays.

6. The MIP chip structure according to any one of claims 1 to 3, characterized in that: Also includes blue light absorbing film, The blue light absorbing film is arranged vertically below the blue light chip emitting blue light.

7. A display device, characterized in that: The display device comprises the MIP chip structure as claimed in any one of claims 1 to 6.

8. A process method for a MIP chip structure, characterized in that: The method comprises: Step 1: providing a substrate; Step 2: coating the entire substrate with photoresist and etching out a metal wiring pattern; Step 3: evaporating a layer of metal and removing the photoresist to form metal wiring; Step 4: Bond the chip with the same outgoing light to the metal wiring ； Repeat steps 2 to 4 to form three layers of metal wirings which are spaced a certain distance apart in the vertical direction and connected together at one end, and each layer of metal wirings is bonded to connect chips with different emitting light.

9. The process method of the MIP chip structure according to claim 8, characterized in that: After the step of bonding the chip of the same type of outgoing light to the metal wiring, the following step is further included: A flat adhesive layer is evenly coated, the flat adhesive layer wraps and covers the chip emitting the same light, and the thickness of the flat adhesive layer is 2-5 um higher than the outer surface of the chip emitting the same light.

10. The process method of the MIP chip structure according to claim 9, characterized in that: Before forming a metal wiring bonded to a blue light chip emitting blue light, the method further includes: A blue light absorbing film is formed on the flat adhesive layer of the previous layer of chips that wrap other emitting light.

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