Gallium nitride-based semiconductor laser with hole burning inhibition layer

Abstract

The invention provides a gallium nitride-based semiconductor laser with a hole burning inhibition layer. The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top. The distribution state and change trend of Al element concentration or In element concentration in the hole burning suppression layer, the upper limiting layer, the upper waveguide layer and the lower waveguide layer are set, the interface strain uniformity, the interface Al element concentration distribution uniformity and the interface quality of the laser structure are regulated and controlled, quantization of injected carrier energy is improved, and the performance of the laser structure is improved. The utilization rate of carriers injected into an active area is improved, the coupling time constant of electrons and photons in an active layer is reduced, the number of interface states is reduced, standing wave reduction caused by stimulated radiation and defect and interface state interaction and standing wave interference population inversion distribution excited by a laser resonant cavity are reduced, and the stability of the laser is improved. Therefore, sudden decrease of any frequency position of the gain curve is suppressed, the hole burning effect is suppressed, and the slope efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser with a hole burning suppression layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: the number of inverted particles generated by the laser has a frequency distribution. The optical frequency curve or the gain optical frequency curve has a sharp drop in the number of particles at a certain frequency due to non-uniform widening and saturation light intensity problems. The number of particles in the local resonant cavity space (wave antinode) is consumed, while the local space (wave node) still exists. This phenomenon is called the "hole burning effect" of the particle number or gain curve. The inversion of the number of particles in the active layer is not uniform in space, the carrier concentration of radiation recombination is not uniform in space, and the standing wave excited in the resonant cavity interferes with the inversion of the number of particles, which greatly reduces the number of inverted particles, causing frequency hole burning in the local gain spectrum and generating a spatial hole burning effect. The gain curve drops at this laser frequency, making the spectrum of the laser wider and containing several modes in the emitted light wave; as the current increases, the stimulated radiation is enhanced, and the carrier concentration in the center of the active area decreases, which will also cause spatial hole burning in the local gain distribution and reduce the gain-guided waveguide effect. Summary of the invention

[0009] In order to solve one of the above technical problems, the present invention provides a gallium nitride-based semiconductor laser with a hole burning suppression layer.

[0010] An embodiment of the present invention provides a gallium nitride-based semiconductor laser with a hole burning suppression layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer, which are arranged in sequence from bottom to top, wherein the Al element concentration of the electron blocking layer is greater than or equal to the Al element concentration of the upper confinement layer, the upper confinement layer comprises a first upper confinement layer and a second upper confinement layer, the first upper confinement layer is located between the electron blocking layer and the upper waveguide layer, the second upper confinement layer is located above the electron blocking layer, the upper waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first upper waveguide layer is located below the second upper waveguide layer, the In element concentration of the first upper waveguide layer is greater than or equal to the In element concentration of the second upper waveguide layer, the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, the first lower waveguide ... first upper waveguide layer is located between the electron blocking layer and the upper waveguide layer, the second upper waveguide layer is located above the electron blocking layer, the upper waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first lower waveguide layer is located between the electron blocking layer and the upper waveguide layer, the first upper waveguide layer is located between the electron blocking layer and the upper waveguide layer, the first upper waveguide layer is located between the electron blocking layer and the upper waveguide layer, the first upper waveguide layer is located between the electron blocking Below the second lower waveguide layer, the In element concentration of the first lower waveguide layer is ≤ the In element concentration of the second lower waveguide layer, a first hole hole burning suppression layer is provided between the first lower waveguide layer and the lower confinement layer, a second hole hole burning suppression layer is provided between the second upper waveguide layer and the first upper confinement layer, a peak position of the Al element concentration of the first hole hole burning suppression layer has a decreasing angle of 60° to 90° toward the active layer, a peak position of the Al element concentration of the second hole hole burning suppression layer has a decreasing angle of 60° to 90° toward the active layer, a peak position of the Al element concentration of the first lower waveguide layer has a decreasing angle of 15° to 60° toward the active layer, and a peak position of the Al element concentration of the second upper waveguide layer has a decreasing angle of 15° to 60° toward the active layer, and the angles are tangent inclination angles along the curve.

[0011] Preferably, the descending angle of the peak position of the Al element concentration of the first lower waveguide layer toward the active layer is ≤ the descending angle of the peak position of the Al element concentration of the second upper waveguide layer toward the active layer ≤ the descending angle of the peak position of the Al element concentration of the first hole burning suppression layer toward the active layer ≤ the descending angle of the peak position of the Al element concentration of the second hole burning suppression layer toward the active layer.

[0012] Preferably, the first upper confinement layer is an unintentionally doped layer, and the Mg doping concentration of the second upper confinement layer is 1E18 cm -3 To 1E19cm -3 The Mg doping concentration of the electron blocking layer is 1E18cm -3 To 1E19cm -3 , the Mg doping concentration of the electron blocking layer ≥ the Mg doping concentration of the second upper confinement layer ≥ the Mg doping concentration of the first upper confinement layer.

[0013] Preferably, the first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have refractive index characteristics;

[0014] The rising angle of the valley position of the refractive index of the first hole burning suppression layer toward the active layer is α, 60°≤α≤90°;

[0015] The rising angle of the valley position of the refractive index of the second hole burning suppression layer toward the active layer is β, 60°≤β≤90°;

[0016] The rising angle of the valley position of the refractive index of the first lower waveguide layer toward the active layer is γ, 10°≤γ≤60°;

[0017] The rising angle of the valley position of the refractive index of the second upper waveguide layer toward the active layer is θ, 15°≤θ≤60°;

[0018] Among them, γ≤θ≤α≤β.

[0019] Preferably, the first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have elastic coefficient characteristics;

[0020] The rising angle of the valley position of the elastic coefficient of the first hole burning suppression layer toward the active layer is

[0021] The rising angle of the valley position of the elastic coefficient of the second hole burning suppression layer toward the active layer is ω, 60°≤ω≤90°;

[0022] The rising angle of the valley position of the elastic coefficient of the first lower waveguide layer toward the active layer is δ, 10°≤δ≤60°;

[0023] The rising angle of the valley position of the elastic coefficient of the second upper waveguide layer toward the active layer is ψ, 15°≤ψ≤60°;

[0024] in,

[0025] Preferably, the first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have thermal expansion coefficient characteristics;

[0026] The peak position of the thermal expansion coefficient of the first hole burning suppression layer has a descending angle of ε toward the active layer, 60°≤ε≤90°;

[0027] The peak position of the thermal expansion coefficient of the second hole burning suppression layer decreases at an angle σ toward the active layer, 60°≤σ≤90°;

[0028] The peak position of the thermal expansion coefficient of the first lower waveguide layer has a descending angle of μ toward the active layer, 10°≤μ≤60°;

[0029] The peak position of the thermal expansion coefficient of the second upper waveguide layer decreases at an angle ρ toward the active layer, 15°≤ρ≤60°;

[0030] Among them, μ≤ρ≤ε≤σ.

[0031] Preferably, the first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have thermal conductivity characteristics;

[0032] The peak position of the thermal conductivity of the first hole burning suppression layer decreases at an angle ζ toward the active layer, 60°≤ζ≤90°;

[0033] The peak position of the thermal conductivity of the second hole burning suppression layer decreases at an angle χ toward the active layer, 60°≤χ≤90°;

[0034] The descending angle of the peak position of the thermal conductivity of the first lower waveguide layer toward the active layer is τ, 10°≤τ≤60°;

[0035] The descending angle of the peak position of the thermal conductivity of the second upper waveguide layer toward the active layer is κ, 15°≤κ≤60°;

[0036] Among them, τ≤κ≤ζ≤χ.

[0037] Preferably, the first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have transverse sound velocity characteristics;

[0038] The descending angle of the peak position of the transverse acoustic velocity of the first hole burning suppression layer toward the active layer is υ, 60°≤υ≤90°;

[0039] The descending angle of the peak position of the transverse acoustic velocity of the second hole burning suppression layer toward the active layer is π, 60°≤π≤90°;

[0040] The descending angle of the peak position of the transverse acoustic velocity of the first lower waveguide layer toward the active layer is λ, 10°≤λ≤60°;

[0041] The descending angle of the peak position of the transverse acoustic velocity of the second upper waveguide layer toward the active layer is ν, 15°≤ν≤60°;

[0042] Among them, λ≤ν≤υ≤π, 60°≤ω≤β≤π≤σ≤χ≤90°.

[0043] Preferably, the first hole burning suppression layer and the second hole burning suppression layer both have light hole effective mass distribution characteristics, peak rate electric field distribution characteristics, conduction band effective state density distribution characteristics, electron effective mass distribution characteristics and separation energy distribution characteristics;

[0044] The light hole effective mass of the first hole burning suppression layer has a function y1=A+B*lnx1 / x1 curve distribution, and the light hole effective mass of the second hole burning suppression layer has a function y2=C+D*e x2 / lnx2 curve distribution;

[0045] The peak rate electric field of the first hole burning suppression layer has a function y3=F+G*lnx1 / x1 curve distribution, and the peak rate electric field of the second hole burning suppression layer has a function y4=H+J*e x2 / lnx2 curve distribution;

[0046] The conduction band effective state density of the first hole burning suppression layer has a function y5=K+L*lnx1 / x1 curve distribution, and the conduction band effective state density of the second hole burning suppression layer has a function y6=M+N*e x2 / lnx2 curve distribution;

[0047] The electron effective mass of the first hole burning suppression layer has a function y7=P+Q*lnx1 / x1 curve distribution, and the electron effective mass of the second hole burning suppression layer has a function y8=R+S*e x2 / lnx2 curve distribution;

[0048] The separation energy of the first hole burning suppression layer has a function y9=T+U*lnx1 / x1 curve distribution, and the separation energy of the second hole burning suppression layer has a function y 10 =V+W*e x2 / lnx2 curve distribution;

[0049] Wherein, x1 is the depth of the first hole burning suppression layer toward the second lower waveguide layer, x2 is the depth of the second hole burning suppression layer toward the first upper confinement layer, P≤A≤T≤F≤K, R≤C≤V≤H≤M.

[0050] Preferably, the first hole burning suppression layer and the second hole burning suppression layer are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN.

[0051] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond combination, with a thickness of 10 angstroms to 150 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms.

[0052] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN and diamond.

[0053] Preferably, the substrate is a single crystal substrate, such as sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0054] The beneficial effects of the present invention are as follows: the present invention sets a hole burning suppression layer in a gallium nitride-based semiconductor laser, and sets the distribution state and change trend of the Al element concentration or the In element concentration in the hole burning suppression layer, the upper confinement layer, the upper waveguide layer, and the lower waveguide layer, regulates the interface strain uniformity, the interface Al element concentration distribution uniformity, and the interface quality of the laser structure, improves the quantization of the injected carrier energy, improves the utilization rate of the injected carriers in the active region, reduces the coupling time constant of electrons and photons in the active layer, reduces the number of interface states, reduces the reduction of standing waves caused by the interaction between stimulated radiation and defects and interface states, and reduces the standing wave interference particle number inversion distribution caused by the laser resonant cavity excitation, thereby suppressing the sudden drop of any frequency position of the gain curve, suppressing the hole burning effect, and improving the slope efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0056] Figure 1 A schematic structural diagram of a gallium nitride-based semiconductor laser with a hole burning suppression layer according to an embodiment of the present invention;

[0057] Figure 2 This is a SIMS secondary ion mass spectrum of the gallium nitride-based semiconductor laser with a hole burning suppression layer according to an embodiment of the present invention.

[0058] Reference numerals:

[0059] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, electron blocking layer, 106, upper confinement layer, 107, hole burning suppression layer;

[0060] 102a, a first lower waveguide layer, 102b, a second lower waveguide layer, 104a, a first upper waveguide layer, 104b, a second upper waveguide layer, 106a, a first upper confinement layer, 106b, a second upper confinement layer, 107a, a first hole burning suppression layer, and 107b, a second hole burning suppression layer. DETAILED DESCRIPTION

[0061] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0062] like Figure 1 and Figure 2 As shown, this embodiment provides a gallium nitride-based semiconductor laser with a hole burning suppression layer, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 arranged in sequence from bottom to top. A hole burning suppression layer 107 is also arranged in the gallium nitride-based semiconductor laser with a hole burning suppression layer.

[0063] Specifically, in this embodiment, the gallium nitride-based semiconductor laser with a hole burning suppression layer is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 in order from bottom to top. The upper confinement layer 106 includes a first upper confinement layer 106a and a second upper confinement layer 106b, and the first upper confinement layer 106a is located below the second upper confinement layer 106b. The electron blocking layer 105 is located between the first upper confinement layer 106a and the second upper confinement layer 106b. The upper waveguide layer 104 includes a first upper waveguide layer 104a and a second upper waveguide layer 104b, and the first upper waveguide layer 104a is located below the second upper waveguide layer 104b. A first hole burning suppression layer 107a is provided between the first lower waveguide layer 102a and the lower confinement layer 101. A second hole burning suppression layer 107b is provided between the second upper waveguide layer 104b and the first upper confinement layer 106a. The first hole burning suppression layer 107a and the second hole burning suppression layer 107b constitute the hole burning suppression layer 107.

[0064] In this embodiment, the lower waveguide layer 102, the upper waveguide layer 104, the electron blocking layer 105, the upper confinement layer 106 and the hole burning suppression layer 107 and between each other all have certain Al element concentration distribution characteristics or In element concentration distribution characteristics.

[0065] Specifically, between the electron blocking layer 105 and the upper confinement layer 106, the Al element concentration of the electron blocking layer 105 is ≥ the Al element concentration of the upper confinement layer 106. Between the first upper waveguide layer 104a and the second upper waveguide layer 104b, the In element concentration of the first upper waveguide layer 104a is ≥ the In element concentration of the second upper waveguide layer 104b. Between the first lower waveguide layer 102a and the second lower waveguide layer 102b, the In element concentration of the first lower waveguide layer 102a is ≤ the In element concentration of the second lower waveguide layer 102b.

[0066] The peak positions of the Al element concentrations in the first hole burning suppression layer 107a, the second hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b also show a certain change trend toward the active layer 103, which is specifically manifested as follows:

[0067] The peak position of the Al element concentration of the first hole burning suppression layer 107a shows a sudden downward trend toward the active layer 103;

[0068] The peak position of the Al element concentration of the second hole burning suppression layer 107b shows a sudden downward trend toward the active layer 103;

[0069] The peak position of the Al element concentration of the first lower waveguide layer 102a shows a gradual downward trend toward the active layer 103;

[0070] The peak position of the Al element concentration of the second upper waveguide layer 104 b shows a gradually decreasing trend toward the active layer 103 .

[0071] More specifically, the peak position of the Al element concentration of the first hole burning suppression layer 107a decreases at an angle of 60° to 90° toward the active layer 103, the peak position of the Al element concentration of the second hole burning suppression layer 107b decreases at an angle of 60° to 90° toward the active layer 103, the peak position of the Al element concentration of the first lower waveguide layer 102a decreases at an angle of 15° to 60° toward the active layer 103, and the peak position of the Al element concentration of the second upper waveguide layer 104b decreases at an angle of 15° to 60° toward the active layer 103, wherein the angle is the inclination angle of the tangent along the curve.

[0072] In this embodiment, a hole burning suppression layer 107 is provided in the gallium nitride-based semiconductor laser, and the distribution state and variation trend of the Al element concentration or the In element concentration in the hole burning suppression layer 107, the upper confinement layer 106, the upper waveguide layer 104, and the lower waveguide layer 102 are set, so as to regulate the interface strain uniformity, the interface Al element concentration distribution uniformity, and the interface quality of the laser structure, improve the quantization of the injected carrier energy, improve the utilization rate of the injected carriers in the active region, reduce the coupling time constant of electrons and photons in the active layer 103, reduce the number of interface states, reduce the reduction of standing waves caused by the interaction between stimulated radiation and defects and interface states, and reduce the standing wave interference particle number inversion distribution caused by the laser resonant cavity excitation, thereby suppressing the sudden drop of any frequency position of the gain curve, suppressing the hole burning effect, and improving the slope efficiency.

[0073] Furthermore, in this embodiment, the descending angle of the peak position of the Al element concentration of the first lower waveguide layer 102a toward the active layer 103, the descending angle of the peak position of the Al element concentration of the second upper waveguide layer 104b toward the active layer 103, the descending angle of the peak position of the Al element concentration of the first vacancy hole burning suppression layer 107a toward the active layer 103, and the descending angle of the peak position of the Al element concentration of the second vacancy hole burning suppression layer 107b toward the active layer 103 also have the following relationship:

[0074] The descending angle of the peak position of the Al element concentration of the first lower waveguide layer 102a toward the active layer 103 is ≤ the descending angle of the peak position of the Al element concentration of the second upper waveguide layer 104b toward the active layer 103 is ≤ the descending angle of the peak position of the Al element concentration of the first vacancy hole burning suppression layer 107a toward the active layer 103 is ≤ the descending angle of the peak position of the Al element concentration of the second vacancy hole burning suppression layer 107b toward the active layer 103.

[0075] In some optional embodiments, the first upper confinement layer 106a, the second upper confinement layer 106b and the electron blocking layer 105 also have a certain Mg doping concentration relationship, specifically, the first upper confinement layer 106a is an unintentionally doped layer, and the Mg doping concentration of the second upper confinement layer 106b is 1E18cm -3 To 1E19cm -3 The Mg doping concentration of the electron blocking layer 105 is 1E18 cm -3 To 1E19cm -3 The Mg doping concentration of the electron blocking layer 105 is greater than or equal to the Mg doping concentration of the second upper confinement layer 106 b and greater than or equal to the Mg doping concentration of the first upper confinement layer 106 a .

[0076] In some optional embodiments, the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b all have refractive index characteristics, and the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b also have a certain refractive index variation trend, which is specifically manifested as follows:

[0077] The refractive index valley position of the first hole burning suppression layer 107a shows a sudden upward trend toward the active layer 103;

[0078] The refractive index valley position of the second hole burning suppression layer 107b shows a sudden upward trend toward the active layer 103;

[0079] The refractive index valley position of the first lower waveguide layer 102a shows a gradual upward trend toward the active layer 103;

[0080] The valley position of the refractive index of the second upper waveguide layer 104 b shows a gradually increasing trend toward the active layer 103 .

[0081] Specifically, the rising angle of the valley position of the refractive index of the first hole burning suppression layer 107a toward the active layer 103 is α, 60°≤α≤90°; the rising angle of the valley position of the refractive index of the second hole burning suppression layer 107b toward the active layer 103 is β, 60°≤β≤90°; the rising angle of the valley position of the refractive index of the first lower waveguide layer 102a toward the active layer 103 is γ, 10°≤γ≤60°; the rising angle of the valley position of the refractive index of the second upper waveguide layer 104b toward the active layer 103 is θ, 15°≤θ≤60°; wherein, γ≤θ≤α≤β.

[0082] In some optional embodiments, the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b all have elastic coefficient characteristics, and the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b also have a certain elastic coefficient variation trend, which is specifically manifested as follows:

[0083] The valley position of the elastic coefficient of the first hole burning suppression layer 107a shows a sudden upward trend toward the active layer 103;

[0084] The valley position of the elastic coefficient of the second hole burning suppression layer 107b shows a sudden upward trend toward the active layer 103;

[0085] The valley position of the elastic coefficient of the first lower waveguide layer 102a shows a gradual upward trend toward the active layer 103;

[0086] The valley position of the elastic coefficient of the second upper waveguide layer 104 b shows a gradually increasing trend toward the active layer 103 .

[0087] Specifically, the rising angle of the valley position of the elastic coefficient of the first hole burning suppression layer 107a toward the active layer 103 is The rising angle of the valley position of the elastic coefficient of the second hole burning suppression layer 107b toward the active layer 103 is ω, 60°≤ω≤90°; the rising angle of the valley position of the elastic coefficient of the first lower waveguide layer 102a toward the active layer 103 is δ, 10°≤δ≤60°; the rising angle of the valley position of the elastic coefficient of the second upper waveguide layer 104b toward the active layer 103 is ψ, 15°≤ψ≤60°; wherein,

[0088] In some optional embodiments, the first hole burning suppression layer 107a, the second hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b all have thermal expansion coefficient characteristics, and the first hole burning suppression layer 107a, the second hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b also have a certain thermal expansion coefficient variation trend, which is specifically manifested as follows:

[0089] The peak position of the thermal expansion coefficient of the first hole burning suppression layer 107a shows a sudden downward trend toward the active layer 103;

[0090] The peak position of the thermal expansion coefficient of the second hole burning suppression layer 107b shows a sudden downward trend toward the active layer 103;

[0091] The peak position of the thermal expansion coefficient of the first lower waveguide layer 102a shows a gradual downward trend toward the active layer 103;

[0092] The peak position of the thermal expansion coefficient of the second upper waveguide layer 104 b shows a gradually decreasing trend toward the active layer 103 .

[0093] Specifically, the descending angle of the peak position of the thermal expansion coefficient of the first hole burning suppression layer 107a toward the active layer 103 is ε, 60°≤ε≤90°; the descending angle of the peak position of the thermal expansion coefficient of the second hole burning suppression layer 107b toward the active layer 103 is σ, 60°≤σ≤90°; the descending angle of the peak position of the thermal expansion coefficient of the first lower waveguide layer 102a toward the active layer 103 is μ, 10°≤μ≤60°; the descending angle of the peak position of the thermal expansion coefficient of the second upper waveguide layer 104b toward the active layer 103 is ρ, 15°≤ρ≤60°; wherein, μ≤ρ≤ε≤σ.

[0094] In some optional embodiments, the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b all have thermal conductivity characteristics, and the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b also have a certain thermal conductivity variation trend, which is specifically manifested as follows:

[0095] The peak position of the thermal conductivity of the first hole burning suppression layer 107a shows a sudden downward trend toward the active layer 103;

[0096] The peak position of the thermal conductivity of the second hole burning suppression layer 107b shows a sudden downward trend toward the active layer 103;

[0097] The peak position of the thermal conductivity of the first lower waveguide layer 102a shows a gradual downward trend toward the active layer 103;

[0098] The peak position of the thermal conductivity of the second upper waveguide layer 104 b shows a gradually decreasing trend toward the active layer 103 .

[0099] Specifically, the peak position of the thermal conductivity of the first hole burning suppression layer 107a decreases at an angle ζ toward the active layer 103, 60°≤ζ≤90°; the peak position of the thermal conductivity of the second hole burning suppression layer 107b decreases at an angle χ toward the active layer 103, 60°≤χ≤90°; the peak position of the thermal conductivity of the first lower waveguide layer 102a decreases at an angle τ toward the active layer 103, 10°≤τ≤60°; the peak position of the thermal conductivity of the second upper waveguide layer 104b decreases at an angle κ toward the active layer 103, 15°≤κ≤60°; wherein, τ≤κ≤ζ≤χ.

[0100] In some optional embodiments, the first hole burning suppression layer 107a, the second hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b all have transverse sound velocity characteristics, and the first hole burning suppression layer 107a, the second hole burning suppression layer 107b, the first lower waveguide layer 102a, and the second upper waveguide layer 104b also have a certain transverse sound velocity variation trend, which is specifically manifested as follows:

[0101] The peak position of the transverse acoustic velocity of the first hole burning suppression layer 107a shows a sudden downward trend toward the active layer 103;

[0102] The peak position of the transverse acoustic velocity of the second hole burning suppression layer 107b shows a sudden downward trend toward the active layer 103;

[0103] The peak position of the transverse acoustic velocity of the first lower waveguide layer 102a shows a slowly decreasing trend toward the active layer 103;

[0104] The peak position of the transverse acoustic velocity of the second upper waveguide layer 104 b shows a gradually decreasing trend toward the active layer 103 .

[0105] Specifically, the descending angle of the peak position of the transverse sound velocity of the first hole burning suppression layer 107a toward the active layer 103 is υ, 60°≤υ≤90°; the descending angle of the peak position of the transverse sound velocity of the second hole burning suppression layer 107b toward the active layer 103 is π, 60°≤π≤90°; the descending angle of the peak position of the transverse sound velocity of the first lower waveguide layer 102a toward the active layer 103 is λ, 10°≤λ≤60°; the descending angle of the peak position of the transverse sound velocity of the second upper waveguide layer 104b toward the active layer 103 is ν, 15°≤ν≤60°; wherein, λ≤ν≤υ≤π, 60°≤ω≤β≤π≤σ≤χ≤90°.

[0106] In this embodiment, by setting the distribution changes of the refractive index, elastic coefficient, thermal expansion coefficient, thermal conductivity and transverse sound velocity in the first hole hole burning suppression layer 107a, the second hole hole burning suppression layer 107b, the first lower waveguide layer 102a and the second upper waveguide layer 104b, the thermal conductivity efficiency of the laser and the interfaces of each epitaxial layer is improved, the internal heat accumulation is reduced, the temperature rise effect of the active layer 103 is reduced, the Stokes frequency shift loss formed by the photon energy difference between the pump light and the oscillation light is suppressed, and the phonon transport efficiency is enhanced, thereby improving the uniformity of the interface thermal stress distribution of the spatial hole burning suppression layer and reducing the waste heat accumulation, reducing the large reduction in the number of inversion particles caused by the temperature rise and thermal stress of the active layer 103, causing frequency hole burning in the local gain spectrum to produce a spatial hole burning effect, and improving the linearity of the laser gain curve.

[0107] In some optional embodiments, the first hole burning suppression layer 107a and the second hole burning suppression layer 107b both have light hole effective mass distribution characteristics, peak rate electric field distribution characteristics, conduction band effective state density distribution characteristics, electron effective mass distribution characteristics and separation energy distribution characteristics, which are specifically shown as follows:

[0108] (1) Light hole effective mass distribution

[0109] The light hole effective mass of the first hole burning suppression layer 107a has a function y1=A+B*lnx1 / x1 curve distribution;

[0110] The light hole effective mass of the second hole burning suppression layer 107b has the function y2=C+D*e x2 / lnx2 curve distribution;

[0111] (2) Peak rate electric field distribution

[0112] The peak rate electric field of the first hole burning suppression layer 107a has a function y3=F+G*lnx1 / x1 curve distribution;

[0113] The peak rate electric field of the second hole burning suppression layer 107b has a function y4=H+J*e x2 / lnx2 curve distribution;

[0114] (3) Distribution characteristics of conduction band effective state density

[0115] The conduction band effective state density of the first hole burning suppression layer 107a has a function y5=K+L*lnx1 / x1 curve distribution;

[0116] The conduction band effective state density of the second hole burning suppression layer 107b has a function y6=M+N*e x2 / lnx2 curve distribution;

[0117] (4) Electron effective mass distribution

[0118] The electron effective mass of the first hole burning suppression layer 107a has a function y7=P+Q*lnx1 / x1 curve distribution;

[0119] The electron effective mass of the second hole burning suppression layer 107b has the function y8=R+S*e x2 / lnx2 curve distribution;

[0120] (5) Separation energy distribution

[0121] The separation energy of the first hole burning suppression layer 107a has a function y9=T+U*lnx1 / x1 curve distribution;

[0122] The separation energy of the second hole burning suppression layer 107b has a function y 10 =V+W*e x2 / lnx2 curve distribution;

[0123] Wherein, x1 is the depth of the first hole burning suppression layer 107a toward the second lower waveguide layer 102b, x2 is the depth of the second hole burning suppression layer 107b toward the first upper confinement layer 106a, P≤A≤T≤F≤K, R≤C≤V≤H≤M.

[0124] This embodiment designs the light hole effective mass distribution, peak rate electric field distribution, conduction band effective state density distribution, electron effective mass distribution and separation energy distribution in the first hole hole burning suppression layer 107a and the second hole hole burning suppression layer 107b, thereby improving the symmetry of the conduction band and the hole band, improving the stability of the particle number inversion and the uniformity of the electron-hole wave function distribution, reducing the non-uniformity of the particle number distribution inversion in the active layer 103 in space and on the interface, and improving the non-uniformity of the spatial and interfacial distribution of the carrier concentration of radiation recombination, so that when the stimulated radiation of the laser is enhanced as the current increases, the carrier concentration in the center of the active region remains continuously stable, suppressing the problem of a sudden decrease in the carrier concentration, thereby suppressing the spatial hole burning effect of the laser.

[0125] In some optional embodiments, the first hole burning suppression layer 107a and the second hole burning suppression layer 107b are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN.

[0126] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and m can be 1, 2, or 3.

[0127] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 150 angstroms.

[0128] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0129] Preferably, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0130] Preferably, the substrate 100 is a single crystal substrate, such as sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0131] The following table is a parameter comparison between a conventional semiconductor laser and the gallium nitride-based semiconductor laser with a hole burning suppression layer proposed in this embodiment, including hole burning current, hole burning probability, and slope efficiency, showing the difference between the conventional semiconductor laser and the gallium nitride-based semiconductor laser with a hole burning suppression layer proposed in this embodiment:

[0132]

[0133] It can be seen that the gallium nitride-based semiconductor laser with a hole burning suppression layer proposed in this embodiment improves the hole burning current and slope efficiency and reduces the hole burning probability compared with traditional semiconductor lasers, and has obvious advantages over traditional semiconductor lasers.

[0134] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A gallium nitride-based semiconductor laser with a hole burning suppression layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: The Al element concentration of the electron blocking layer is ≥ the Al element concentration of the upper limiting layer, the upper limiting layer includes a first upper limiting layer and a second upper limiting layer, the first upper limiting layer is located between the electron blocking layer and the upper waveguide layer, the second upper limiting layer is located above the electron blocking layer, the upper waveguide layer includes a first upper waveguide layer and a second upper waveguide layer, the first upper waveguide layer is located below the second upper waveguide layer, the In element concentration of the first upper waveguide layer is ≥ the In element concentration of the second upper waveguide layer, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, the In element concentration of the first lower waveguide layer is ≤ the In element concentration of the second lower waveguide layer A first hole hole burning suppression layer is provided between the first lower waveguide layer and the lower limiting layer, a second hole hole burning suppression layer is provided between the second upper waveguide layer and the first upper limiting layer, a peak position of Al element concentration of the first hole hole burning suppression layer has a decreasing angle of 60° to 90° toward the active layer, a peak position of Al element concentration of the second hole hole burning suppression layer has a decreasing angle of 60° to 90° toward the active layer, a peak position of Al element concentration of the first lower waveguide layer has a decreasing angle of 15° to 60° toward the active layer, and a peak position of Al element concentration of the second upper waveguide layer has a decreasing angle of 15° to 60° toward the active layer, and the angles are tangent inclination angles along the curve.

2. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 1, characterized in that: The descending angle of the peak position of the Al element concentration of the first lower waveguide layer toward the active layer is ≤ the descending angle of the peak position of the Al element concentration of the second upper waveguide layer toward the active layer ≤ the descending angle of the peak position of the Al element concentration of the first hole burning suppression layer toward the active layer ≤ the descending angle of the peak position of the Al element concentration of the second hole burning suppression layer toward the active layer.

3. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 1, characterized in that: The first upper confinement layer is an unintentionally doped layer, and the Mg doping concentration of the second upper confinement layer is 1E18 cm -3 To 1E19cm -3 The Mg doping concentration of the electron blocking layer is 1E18cm -3 To 1E19cm -3 , the Mg doping concentration of the electron blocking layer ≥ the Mg doping concentration of the second upper confinement layer ≥ the Mg doping concentration of the first upper confinement layer.

4. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 1, characterized in that: The first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have refractive index characteristics; The rising angle of the valley position of the refractive index of the first hole burning suppression layer toward the active layer is α, 60°≤α≤90°; The rising angle of the valley position of the refractive index of the second hole burning suppression layer toward the active layer is β, 60°≤β≤90°; The rising angle of the valley position of the refractive index of the first lower waveguide layer toward the active layer is γ, 10°≤γ≤60°; The rising angle of the valley position of the refractive index of the second upper waveguide layer toward the active layer is θ, 15°≤θ≤60°; Among them, γ≤θ≤α≤β.

5. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 4, characterized in that: The first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have elastic coefficient characteristics; The rising angle of the valley position of the elastic coefficient of the first hole burning suppression layer toward the active layer is The rising angle of the valley position of the elastic coefficient of the second hole burning suppression layer toward the active layer is ω, 60°≤ω≤90°; The rising angle of the valley position of the elastic coefficient of the first lower waveguide layer toward the active layer is δ, 10°≤δ≤60°; The rising angle of the valley position of the elastic coefficient of the second upper waveguide layer toward the active layer is ψ, 15°≤ψ≤60°; in, 6. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 5, characterized in that: The first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have thermal expansion coefficient characteristics; The descending angle of the peak position of the thermal expansion coefficient of the first hole burning suppression layer toward the active layer is ε, 60°≤ε≤90°; The peak position of the thermal expansion coefficient of the second hole burning suppression layer decreases at an angle σ toward the active layer, 60°≤σ≤90°; The peak position of the thermal expansion coefficient of the first lower waveguide layer has a descending angle of μ toward the active layer, 10°≤μ≤60°; The peak position of the thermal expansion coefficient of the second upper waveguide layer decreases at an angle ρ toward the active layer, 15°≤ρ≤60°; Among them, μ≤ρ≤ε≤σ.

7. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 6, characterized in that: The first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have thermal conductivity characteristics; The peak position of the thermal conductivity of the first hole burning suppression layer decreases at an angle ζ toward the active layer, 60°≤ζ≤90°; The peak position of the thermal conductivity of the second hole burning suppression layer decreases at an angle χ toward the active layer, 60°≤χ≤90°; The descending angle of the peak position of the thermal conductivity of the first lower waveguide layer toward the active layer is τ, 10°≤τ≤60°; The descending angle of the peak position of the thermal conductivity of the second upper waveguide layer toward the active layer is κ, 15°≤κ≤60°; Among them, τ≤κ≤ζ≤χ.

8. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 7, characterized in that: The first hole burning suppression layer, the second hole burning suppression layer, the first lower waveguide layer and the second upper waveguide layer all have transverse sound velocity characteristics; The descending angle of the peak position of the transverse acoustic velocity of the first hole burning suppression layer toward the active layer is υ, 60°≤υ≤90°; The descending angle of the peak position of the transverse acoustic velocity of the second hole burning suppression layer toward the active layer is π, 60°≤π≤90°; The descending angle of the peak position of the transverse acoustic velocity of the first lower waveguide layer toward the active layer is λ, 10°≤λ≤60°; The descending angle of the peak position of the transverse acoustic velocity of the second upper waveguide layer toward the active layer is ν, 15°≤ν≤60°; Among them, λ≤ν≤υ≤π, 60°≤ω≤β≤π≤σ≤χ≤90°.

9. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 1, characterized in that: The first hole burning suppression layer and the second hole burning suppression layer both have light hole effective mass distribution characteristics, peak rate electric field distribution characteristics, conduction band effective state density distribution characteristics, electron effective mass distribution characteristics and separation energy distribution characteristics; The light hole effective mass of the first hole burning suppression layer has a function y1=A+B*lnx1 / x1 curve distribution, and the light hole effective mass of the second hole burning suppression layer has a function y2=C+D*e x2 / lnx2 curve distribution; The peak rate electric field of the first hole burning suppression layer has a function y3=F+G*lnx1 / x1 curve distribution, and the peak rate electric field of the second hole burning suppression layer has a function y4=H+J*e x2 / lnx2 curve distribution; The conduction band effective state density of the first hole burning suppression layer has a function y5=K+L*lnx1 / x1 curve distribution, and the conduction band effective state density of the second hole burning suppression layer has a function y6=M+N*e x2 / lnx2 curve distribution; The electron effective mass of the first hole burning suppression layer has a function y7=P+Q*lnx1 / x1 curve distribution, and the electron effective mass of the second hole burning suppression layer has a function y8=R+S*e x2 / lnx2 curve distribution; The separation energy of the first hole burning suppression layer has a function y9=T+U*lnx1 / x1 curve distribution, and the separation energy of the second hole burning suppression layer has a function y 10 =V+W*e x2 / lnx2 curve distribution; Wherein, x1 is the depth of the first hole burning suppression layer toward the second lower waveguide layer, x2 is the depth of the second hole burning suppression layer toward the first upper confinement layer, P≤A≤T≤F≤K, R≤C≤V≤H≤M.

10. The gallium nitride-based semiconductor laser having a hole burning suppression layer according to claim 1, characterized in that: The first hole burning suppression layer and the second hole burning suppression layer are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN; The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond , with a thickness of 10 angstroms to 150 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The substrate is a single crystal substrate, such as sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

Images