Power module and manufacturing method thereof

Abstract

The invention relates to a power module (12) having a first circuit carrier (14) which has an electrically insulating layer (16) on which at least one first conductor structure (18), at least one second conductor structure (20a, 20b) and at least one third conductor structure (22) are formed. The layout of the first circuit carrier (14) is implemented in mirror symmetry with respect to the central longitudinal axis (24); the second circuit carrier (26) is designed as a rectangular, in particular flexible, printed circuit board (52) which is arranged symmetrically with respect to the central longitudinal axis (24). Contact regions (54, 56) of the flexible printed circuit board (52) are connected to a first and a second semiconductor switch (28, 30) (HS1-HS4, LS1-LS4) of the first bonding wire (60), the first semiconductor switch (28) (HS1-HS4) being connected to the first conductor structure (18) via a second bonding wire (62) and the second semiconductor switch (30) (LS1-LS4) being connected to the third conductor structure (22) via a second bonding wire (62).

Description

Technical Field

[0001] The invention relates to a power module having a first circuit carrier having an electrically insulating layer on which at least one first conductor structure is formed. The invention also relates to a method for producing a power module and a power module bridge comprising a plurality of power modules. Background Art

[0002] In the prior art, power modules are additionally molded, which are installed, for example, in a power module bridge. During molding, the power modules are embedded in a solid protective housing, which is made, for example, of plastic (molding mass). The molding mass serves to encase and protect the interior of the power module. However, such encapsulation of the power module by the molding mass is not particularly resistant to cracks.

[0003] A power module is known from DE 11 2017 004 390 T5, which has the following features: an insulating substrate having a front side, on which a power semiconductor component is fastened; a base plate, which is connected to the back side of the insulating substrate; a housing, which is fastened to the base plate and surrounds the insulating substrate; a cover, which is fastened to the housing and forms a sealed area; and a silicone gel, which serves as a filling element, which fills the entire sealed area and has an internal stress, which serves as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, which is used in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. Each of the at least two first power transistors is directly arranged on a corresponding first contact surface of the first contact surfaces and is directly connected to the corresponding first contact surface in an electrically conductive manner via the ground contact surface of the first power transistor. In addition, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface. The at least two second power transistors are directly arranged on the second contact surface and are directly connected to the second contact surface in an electrically conductive manner via the corresponding ground contact surface of the second power transistor. In addition, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on the side of the second power transistor facing away from the surface of the circuit carrier, and the respective second power transistor of the at least two second power transistors is connected to the respective third contact surface of the at least two third contact surfaces in an electrically conductive manner via the further contact surface of the second power transistor. The at least two first contact surfaces and the at least two third contact surfaces are arranged successively in an alternating manner in the longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, wherein the second contact surface has at least two contact areas, wherein each of the at least two contact areas is located next to the respective first power transistor of the at least two first power transistors. The at least two first power transistors each have a further contact surface on the side of the first power transistor facing away from the surface of the circuit carrier, and each of the at least two first power transistors is connected to the respective contact area of ​​the at least two contact areas of the second contact surface in an electrically conductive manner via the further contact surface of the first power transistor, which contact area is located next to the first power transistor. In this case, the at least two contact regions of the second contact area and the at least two second power transistors are arranged alternately one behind the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor or a control device. In this case, an end section of the flexible foil is electrically contacted at a contact point by heat input, wherein the end section of the flexible foil is attached to an electrical contact that is designed in a protruding manner at the contact point. The end section of the flexible foil is designed as a wave-like impact portion, in particular as a deflection portion. Summary of the invention

[0006] According to the present invention, a power module is provided, the power module having a first circuit carrier, the first circuit carrier having an electrically insulating layer, at least one first conductor structure, at least one second conductor structure and at least one third conductor structure constructed on the electrically insulating layer, the first conductor structure can be connected to a first supply attachment terminal contact via at least one external contact area, the second conductor structure can be connected to a second supply attachment terminal contact via at least one external contact area, the third conductor structure can be connected to a load attachment terminal contact via at least one external contact area, wherein at least one first semiconductor switch is electrically inserted between the at least one first conductor structure and the at least one third conductor structure, wherein the at least one second semiconductor switch The invention relates to a device for manufacturing a semiconductor device for use in a semiconductor device for controlling a semiconductor device and a semiconductor circuit. The device comprises a semiconductor device for controlling a semiconductor device and a semiconductor circuit board ...

[0007] In the solution proposed according to the invention, electronic circuits with electrical connections, in particular copper bonds, can be implemented such that existing production lines can be reused and no new processes or further development and reconfiguration of processes are required.

[0008] Advantageously, in the power module according to the invention, the first and / or second bonding wire is implemented as a copper bond. Alternatively, there is the possibility that in the power module proposed according to the invention, the first and / or second bonding wire is implemented as an aluminum bond.

[0009] In the power module proposed according to the invention, the first semiconductor switch and the second semiconductor switch are designed as transistors, in particular as MOSFETs (field effect transistors).

[0010] Furthermore, the power module proposed according to the invention is characterized in that the second bonding wire extends as an aluminum bond between the control attachment terminals of the first and second semiconductor switches and the contact region of the flexible printed circuit board.

[0011] In the power module proposed according to the invention, the first bonding wire extends as a copper bond between the first and the second semiconductor switch and the external contact regions of the first and the third conductor structure.

[0012] Furthermore, the invention relates to a power module bridge having a plurality of power modules, wherein the plurality of power modules are arranged on a cooling surface and combined to form a power module bridge, wherein each of the power modules is assigned a separate cooling zone.

[0013] In a further development of the power module bridge proposed according to the invention, the power module bridge comprises power modules which are each surrounded by a gel frame filled with gel. The gel has an advantageous viscosity which, on the one hand, compensates for deformations and, on the other hand, provides complete protection of the power modules from the environment.

[0014] The invention further relates to a method for producing a power module, wherein a first circuit carrier is designed mirror-symmetrically with respect to a central longitudinal axis, and a second circuit carrier and at least one first semiconductor switch and at least one second semiconductor switch are provided, the second circuit carrier having at least one internal contact area and at least one external contact area, wherein the first semiconductor switch is electrically attached between a first conductor structure of the first circuit carrier and at least one second conductor structure of the first circuit carrier; wherein at least one second semiconductor switch is electrically attached between at least one third conductor structure of the first circuit carrier and at least one first or second conductor structure, wherein at least one second circuit carrier is arranged spatially parallel and symmetrically with respect to the central longitudinal axis above the first circuit carrier. The first semiconductor switch is connected to the first conductor structure via a first bonding wire, and the second semiconductor switch is connected to the third conductor structure via a second bonding wire. Furthermore, contact areas of a flexible printed circuit board are connected to the first and second semiconductor switches via the second bonding wire.

[0015] Advantageously, according to the method proposed in accordance with the invention, already equipped and contact-connected power modules can be combined to form a power module bridge.

[0016] In a development of the method proposed according to the invention, the respective power modules of the power module bridge are arranged on a cooling region of the cooling surface.

[0017] In an advantageous development of the method proposed according to the invention, the power module is surrounded by a gel frame filled with gel.

[0018] Advantages of the present invention

[0019] By means of the power module proposed according to the invention or the method for manufacturing the power module, the electrical connection can be implemented in particular as a lead connection on the power module. Advantageously, the electrical connection can be configured as a copper lead or an aluminum lead or the like, so that no new process scheme is required and already tested production lines (Fertigungsstrecken) can be used. The solution proposed according to the invention is characterized in particular by its robustness and its versatility. The electrical connections in the form of copper bonds or aluminum bonds can be produced in an alternating order in a minimum space, wherein the individual electrical connections have flat areas and include curved areas, which can be particularly easily connected to the conductor structure materially locked, with the aid of which the insulating channel can be bridged. In addition, the bonding wires are characterized in that they can be guided very flexibly and can be adapted to various geometries of power modules, in particular arranged one above the other.

[0020] According to the solution proposed according to the invention, the individual power modules can be brought together side by side on a cooling surface so that a power module bridge is produced, which includes a plurality of power modules of the power module proposed according to the invention. For example, three power modules arranged side by side can be accommodated on a cooling surface, which is subdivided so that each of the power modules is assigned a separate cooling area. In addition, a gel frame can be provided by the solution proposed according to the invention, which surrounds, for example, three power modules according to the invention and is open on one side, the power modules being brought together to form a power module bridge. In order to secure or to protect the components of the power modules proposed according to the invention (the power modules are now interconnected to form a power module bridge), the gel frame can be cast with gel from its open side, so that the components of the power modules can be reliably protected from environmental influences, heat and other influences from the outside. Due to the viscosity of the gel, thermal expansion or deformation can also be easily compensated, so that crack formation can not be promoted and therefore the ingress of moisture can also not be promoted.

[0021] Furthermore, advantageously, a symmetrical connection is provided, see section X (T+ path) and section Y (phase path), which is very advantageous from an electrical point of view. As a result, all semiconductor components or chips can be loaded evenly. In the event of a short circuit, energy can also be uniformly absorbed by the semiconductor components. As a result, for example, when used in an electrically driven vehicle, the vehicle can be safely disconnected from the current path, in this way making it possible to very delicately protect other components in the electrically driven vehicle. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

[0023] The accompanying drawings show:

[0024] Figure 1.1-1.3 shows different stages of the construction of a power module according to the invention, which is equipped with semiconductor switches on different conductor structures and a flexible printed circuit board,

[0025] Figure 2.1 Show according to Figure 1.3 A power module having a first bonding wire extending between the semiconductor switch and a portion of the conductor structure,

[0026] Figure 2.2 an enlarged schematic diagram showing electrical connections in the form of bonding wires produced as copper bonds and arranged in an alternating sequence,

[0027] Figure 2.3 shows the formation of a second bonding wire between the semiconductor switches, starting from the contact area of ​​the control attachment terminal of the semiconductor switch with the flexible printed circuit board,

[0028] Figure 3 shows a top view of a cooling surface which is subdivided into cooling zones,

[0029] Figure 4 shows the arrangement of the contact-connected and equipped power modules on the corresponding cooling areas of the cooling surface,

[0030] Figure 5 shows an arrangement of gel frames around three power modules according to the invention, which form a power module bridge,

[0031] Figure 6 The busbar T- and phase are shown in accordance with Figure 5 The arrangement of the arrangement, and

[0032] Figure 7The arrangement of a busbar T+ with insulation above the gel frame of a power module bridge comprising three power modules according to the invention is shown. DETAILED DESCRIPTION

[0033] In the following description of embodiments of the invention, identical or similar elements are denoted by the same reference numerals, wherein a repeated description of these elements is omitted in individual cases. The figures merely schematically illustrate the subject matter of the invention.

[0034] From the attached Figures 1.1 to 1.3 As can be seen from the sequence of the drawings, the power module 12 according to the present invention comprises a first circuit carrier 14, which is arranged in an X,Y plane 10. The first circuit carrier has an electrically insulating layer 16. At least one first conductor structure 18, at least one second conductor structure 20a, 20b and at least one third conductor structure 22 are constructed on the electrically insulating layer, the first conductor structure can be connected to the first supply attachment terminal contact via at least one external contact area 18.2, the second conductor structure can be connected to the second supply attachment terminal contact via at least one external contact area 20a.2, 20b.2, and the third conductor structure can be connected to the load attachment terminal contact via at least one external contact area 22.2.

[0035] From the basis Figure 1.1 It can be seen from the schematic diagram of that the individual conductor structures 18, 20a, 20b, 22 are separated from each other by channels, so that there is no conductive connection 58 between these conductor structures. Figure 1.1 The power module 12 or the first circuit carrier 14 is designed symmetrically with respect to its central longitudinal axis 24 .

[0036] from Figure 1.2 It can be seen that at least one first semiconductor switch 28 (HS1-HS4) is arranged on the second conductor structure 20a, 20b. In addition, at least one second semiconductor switch 30 (LS1-LS4) is accommodated in the lower part of the first conductor structure 18. The semiconductor switches 28, 30 (HS1-HS4, LS1-LS4) are, for example, semiconductor components 42, such as MOSFETs or other transistors. These semiconductor switches each have a control attachment terminal 34, wherein the semiconductor switches 28, 30 (HS1-HS4, LS1-LS4) can be sintered to the corresponding conductor structure 20a, 20b, 18 or fastened to these conductor structures in a material-locked manner in another way.

[0037] In accordance with Figure 1.2In the schematic diagram of , two sections X, Y are also drawn, wherein the section X corresponds to a symmetrical, current-carrying connection on the T+ path and the section Y corresponds to a symmetrical connection on the phase path. The symmetrical connection shown can correspond, for example, to symmetrical current paths which lead to a uniform load on the semiconductor components 42 or the semiconductor switches 28, 30. Figure 1.2 The symmetrical current paths X, Y shown in the figure allow the semiconductor components 42 to absorb energy uniformly in the event of a short circuit, so that if these semiconductor components are accommodated in an electrically driven vehicle, for example in the power electronics of the vehicle, the current paths can be safely separated and other components in the vehicle can be effectively protected.

[0038] from Figure 1.3 It can be seen that the second circuit carrier 26 in the form of a flexible printed circuit board 52 is applied to the Figure 1.2 . The flexible printed circuit board 52 comprises at least one temperature sensor 50 (NTC) and a first contact area 54 in the form of a strip and a second contact area 56 in the form of a strip, which extends parallel to the first contact area. The two contact areas 54, 56 are provided with contact pads 70 for attaching an electrically conductive connection 58, as will be described. The contact pads 70 are applied in pairs side by side on the first contact area 54 and the second contact area 56 of the flexible printed circuit board 52.

[0039] Figure 2.1 A top view of a first circuit carrier 14 of a power module 12 proposed according to the invention is shown, which is equipped and partially contacted.

[0040] Figure 2.1 Shown, according to Figure 1.3 Based on the state of the power module 12, the corresponding first semiconductor switch 28 (HS1-HS4) and the second semiconductor switch 30 (LS1-LS4) are contact-connected. Figure 2.1 In the state shown, the control attachment terminal 34 of the semiconductor structure element 42 constructed as a MOSFET is still idle and not contacted; however, the first semiconductor switch 28 (HS1-HS4) and the second semiconductor switch 30 (LS1-LS4) are contacted to each other via the first bonding wire 60, which is preferably constructed as a copper bond.

[0041] Figure 2.1 It is shown that a first bonding wire 60 is connected to an external contact region 18 . 2 of the first conductor structure 18 as an electrically conductive connection 58 with respect to the first semiconductor switch 28 ( HS1 - HS4 ).

[0042] The external control attachment terminals 34 of the first semiconductor switch 28 (HS1-HS4) and the second semiconductor switch 30 (LS1-LS4) remain uncontacted and are opposite to the corresponding contact pads 70, which are located on the upper side of the first contact area 54 and the second contact area 56 of the flexible printed circuit board 52.

[0043] Figure 2.2 In the enlarged view, a detail of a partially contact-connected and equipped first circuit carrier 14 is shown.

[0044] From the basis Figure 2.2 , it can be seen from the enlarged view of that the first bonding wires 60, which are implemented as copper bonds, are arranged side by side in an alternating order 68. Here, each of the electrical connections 58 is configured as a first bonding wire 60, preferably a copper bond, and for example comprises a flat region 66 that is in contact with the external contact region 22.2 of the third conductor structure 22. Arc-shaped regions 64 extend from these flat regions from both sides, which are in electrical contact with the respective attachment pads of the semiconductor component 42, which is preferably configured as a MOSFET. The conductive connection 58 in the form of the first bonding wire 60 as a copper bond extends with different arc widths relative to the arc-shaped region 64.

[0045] On the other hand, from Figure 2.2 It is known from the figure that the semiconductor structure element 42 constructed as a MOSFET Figure 2.1 The control attachment terminal 34 still free in the middle is contacted via an electrically conductive connection 58 in the form of a second bonding wire 62, which is realized as an aluminum bond, to a contact pad 70 on the upper side of a second contact area 56 of the flexible printed circuit board 52. The second contact area 56 covers a part of the external contact area 22b.2.

[0046] Reference numeral 16 denotes an electrically insulating layer which is applied on the top side of the first circuit carrier 14 .

[0047] from Figure 2.3 It can be seen that in this state the power module 12 proposed according to the invention is completely equipped and fully contacted. Figure 2.3 It is shown that all control terminals 34 of the first and second semiconductor switches 28 , 30 ( HS1 - HS4 , LS1 - LS4 ) are electrically connected to contact pads 70 on the upper side of the first contact area 54 and the second contact area 56 of the flexible printed circuit board 52 .

[0048] In the present case, the conductive connection 58 is configured as a second bonding wire 62, which is configured as an aluminum bond, for example. Instead of an aluminum bond, the second bonding wire 62 can also be made of copper or another material with good electrical conductivity. Figure 2.3 , the semiconductor component 42 is either electrically conductively connected to the external contact area 18.2 of the first conductor structure 18 or to the external contact area 22.2 of the third conductor structure 22 via a first bonding wire 60, the semiconductor component being, for example, a MOSFET, and the first bonding wire being, for example, constructed as a copper bond.

[0049] from Figure 3 A plan view of a plate-shaped plan view can be seen, on which the cooling surface 72 is formed. Figure 3 In the top view in FIG. 1 , the cooling surface 72 has a plurality of cooling regions, namely a first cooling region 74, a second cooling region 76 and a third cooling region 78. The dimensions of the individual cooling regions 74, 76, 78 are determined in such a way that the surface of the cooling regions 74, 76, 78 corresponds to the bottom surface of the first circuit carrier 14 of the power module 12 proposed according to the present invention.

[0050] Figure 4 A cooling surface 72 equipped with a plurality of power modules 12 is shown. On each of the cooling regions 74, 76, 78, a first circuit carrier 14 of three power modules 12 according to the invention is applied. The power modules 12 are cooled via the cooling regions 74, 76, 78 via the first circuit carrier 14, so that the heat loads generated during operation are dissipated. Figure 4 It can be seen from the top view that the three power modules 12 applied to the cooling surface 72 in the equipment scheme 80 correspond to the state of the power module 12, that is, they are fully equipped and the contacts are connected, such as Figure 2.3 As shown. The flexible printed circuit board 52 assigned to each of the power modules 12 and serving as the second circuit carrier 26 is still designed to be flat, ie, extends in the X,Y plane 10. Figure 2.3 , the respective first and second contact regions 54 , 56 of the flexible printed circuit board 52 are electrically contacted to the contact pads 70 arranged in pairs thereon via the electrically conductive connection 58 by means of the first bonding wire 60 or the second bonding wire 62 .

[0051] from Figure 5 It can be seen that in this embodiment variant, the flexible printed circuit board 52 has a vertical portion 82, that is, the portion of the flexible printed circuit board 52 adjacent to the first contact area 54 undergoes a 90° deflection 84. Therefore, these portions extend beyond the X,Y plane 10 in the vertical direction, that is, in the Z direction. Figure 5 The schematic diagram shows that the three power modules 12 on the cooling surface 72 are based on Figure 4 The arrangement shown in the equipment scheme 80 is surrounded by a gel frame 86 which is realized in a rectangular manner. The gel frame 86 has a height 92 of a few millimeters and surrounds all power modules 12 arranged on the cooling areas 74, 76, 78 of the cooling surface 72. Figure 5 In a variant embodiment, the gel frame 86 has a first, longer side 88 and a shorter side 90, which extends at right angles to the first side. The gel frame 86 is open on one side, so that the power module 12 surrounded by the gel frame can be cast, for example, by filling the gel frame 86 with gel from the top and thus protected from environmental influences. Of course, the gel frame 86 is only cast when the fully contacted and equipped power module 12 is embedded in the gel frame.

[0052] From the basis Figure 6 and 7 In the schematic diagram of FIG. 1 , it is known from the state of a power module bridge 102 with three power modules 12 according to the present invention that these power modules are basically arranged in the X,Y plane 10, applied to the corresponding cooling areas 74, 76, 78 of the cooling surface 72 and surrounded by a gel frame 86. Figure 6 In the schematic diagram of FIG. 1 , in this case, a busbar 94 is connected to a T-busbar 96 and to a phase 98 in a materially bonded manner. Parts of the individual conductor structures 18, 20a, 20b, 22 are electrically attached via the mentioned components. Figure 7 As shown, after the material connection of the busbar 94 is performed by welding, the T+ busbar 100 is electrically connected to the external contact areas 20a.2, 20b.2, for example, and the T+ busbar may optionally have an insulation. The phase 98 is electrically connected to the third conductor structure 22, and see Figure 6 , the T-busbar 96 is connected to the first conductor structure 18 in a material-bonded manner.

[0053] In the method for producing a power module 12 according to the invention, a first circuit carrier 14, a second circuit carrier 26 and at least one first semiconductor switch 28 (HS1-HS4) and at least one second semiconductor switch 30 (LS1-LS4) are provided, the first circuit carrier being symmetrical about a central longitudinal axis 24, the second circuit carrier having at least one internal contact area and at least one external contact area. The first semiconductor switch 28 (HS1-HS4) is electrically attached between at least one first conductor structure 18 and at least one second conductor structure 20a, 20b of the first circuit carrier 14. The second semiconductor switch 30 (LS1-LS4) is electrically attached between at least one third conductor structure 22 of the first circuit carrier 14 and at least the second conductor structure 20a, 20b. The at least one second circuit carrier 26 is arranged above the first circuit carrier 14 in a spatially parallel manner and symmetrically with respect to the central longitudinal axis 24. The first semiconductor switch 28 (HS1-HS4) is electrically connected to the first conductor structure 18 via the first bonding wire 60, and the second semiconductor switch 30 (LS1-LS4) is electrically connected to the third conductor structure 22 via the first bonding wire 60. In addition, the contact areas 54 and 56 of the flexible printed circuit board 52 are electrically connected to the first and second semiconductor switches 28 and 30 (HS1-HS4, LS1-LS4) via the second bonding wire 62.

[0054] The invention is not limited to the embodiments described herein and the aspects emphasized therein. On the contrary, numerous modifications within the scope of a person skilled in the art can be realized within the scope given by the claims.

Claims

1. A power module (12), comprising a first circuit carrier (14), the first circuit carrier having an electrically insulating layer (16), on which at least one first conductor structure (18), at least one second conductor structure (20a, 20b) and at least one third conductor structure (22) are constructed, the first conductor structure being connectable to a first supply attachment terminal contact via an external contact region (18.2), the second conductor structure being connectable to a second supply attachment terminal contact via at least one external contact region (20a.2, 20b.2), and the third conductor structure being connectable to a load attachment terminal contact via at least one external contact region (22.2), wherein: At least one first semiconductor switch (28) (HS1-HS4) is electrically inserted between the at least one first conductor structure (18) and the at least one third conductor structure (22), wherein at least one second semiconductor switch (30) (LS1-LS4) is electrically inserted between the at least one third conductor structure (22) and the at least one second conductor structure (20a, 20b), wherein at least one second circuit carrier (26) is arranged spatially parallel above the first circuit carrier (14) and has at least one internal contact area and at least one external contact area, wherein the at least one internal contact area is electrically connected to the at least one third conductor structure (22). The control attachment ends (34) of the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) are contact-connected on the internal contact area, and a contact element is arranged on the at least one external contact area, and the contact element can be contact-connected with the control line of the external contact device, wherein the layout of the first circuit carrier (14) is implemented in a mirror-symmetrical manner with respect to the central longitudinal axis (24), and the second circuit carrier (26) is implemented as a rectangular and in particular flexible printed circuit board (52), which is arranged symmetrically with respect to the central longitudinal axis (24), in, The contact areas (54, 56) of the flexible printed circuit board (52) are connected to the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) of the first bonding wire (60), wherein the first semiconductor switch (28) (HS1-HS4) is connected to the first conductor structure (18) via a second bonding wire (62), and the second semiconductor switch (30) (LS1-LS4) is connected to the third conductor structure (22) via a second bonding wire (62).

2. The power module (12) according to claim 1, characterized in that The first and / or the second bonding wire (60, 62) is implemented as a copper bond.

3. The power module (12) according to claim 1, characterized in that: The first and / or the second bonding wire (60, 62) is implemented as an aluminum bond.

4. The power module (12) according to any one of claims 1 to 3, characterized in that: The first semiconductor switches (28) (HS1-HS4) and the second semiconductor switches (30) (LS1-LS4) are implemented as transistors, in particular MOSFETs.

5. The power module (12) according to any one of claims 1 to 4, characterized in that: The second bonding wire (62) extends as an aluminum bond between control attachment terminals (34) of the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) and contact areas (54, 56) of the flexible printed circuit board (52).

6. The power module (12) according to any one of claims 1 to 5, characterized in that: The first bonding wire (60) extends as a copper bond between the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) and external contact areas (18.2, 22.2) of the first and third conductor structures (18, 22).

7. A power module bridge (102) comprising a plurality of power modules (12) according to any one of claims 1 to 6, characterized in that: A plurality of power modules (12) are combined on a cooling surface (12) to form a power module bridge (102), wherein each of the power modules (12) is assigned a separate cooling zone (74, 76, 78).

8. The power module bridge (102) according to claim 7, characterized in that The power module (12) is surrounded by a gel frame (86) filled with gel.

9. A method for producing a power module (12) according to any one of claims 1 to 6, wherein: The first circuit carrier (14) is designed in a mirror-symmetrical manner with respect to a central longitudinal axis (24), and a second circuit carrier (26), in particular a flexible printed circuit board (52), and at least one first semiconductor switch (28) (HS1-HS4) and at least one second semiconductor switch (30) (LS1-LS4) are provided, the second circuit carrier having at least one inner contact area and at least one outer contact area, wherein the first semiconductor switch (28) (HS1-HS4) is electrically attached between at least one first conductor structure (18) and at least one third conductor structure (22) of the first circuit carrier (14), wherein at least one second semiconductor switch (30) (LS1-LS4) is electrically attached between at least one third conductor structure (22) and at least one second conductor structure (20a, 20b) of the first circuit carrier (14), wherein the at least one second circuit carrier (26) is arranged spatially parallel to and symmetrically with respect to the central longitudinal axis (24) above the first circuit carrier (14), the second circuit carrier being embodied as a flexible printed circuit board (52), It is characterized in that The first semiconductor switch (28) (HS1-HS4) is electrically connected to the first conductor structure (18) via a first bonding wire (60), and the second semiconductor switch 30 (LS1-LS4) is electrically connected to the third conductor structure (22) via a first bonding wire (60), and The contact areas (54, 56) of the flexible printed circuit board (52) are electrically connected to the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) via second bonding wires (62).

10. The method according to claim 9, characterized in that The equipped and contact-connected power modules (12) are combined into a power module bridge (102).

11. The method according to claims 9 to 10, characterized in that The power module (12) is arranged on a cooling region (74, 76, 78) of a cooling surface (72).

12. The method according to claims 9 to 11, characterized in that The power module (12) is surrounded by a gel frame (86) filled with gel.

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