Ultraviolet light source with high optical power density

Abstract

The invention discloses a high-optical-power-density ultraviolet light source which comprises a substrate provided with a circuit layer. The plurality of chips are arranged on the substrate, and electrodes of the chips are electrically connected with the circuit layer; the reflecting part is arranged around the periphery of the chip, and the height of the reflecting part is greater than that of the chip; and the light transmitting piece is arranged above the chip and the reflecting piece. According to the invention, the illumination density and intensity of the ultraviolet light source with high optical power density can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of high light power density ultraviolet light source, in particular to a high light power density ultraviolet light source. Background Art

[0002] UV curing is an important application field of near-UV light sources, but UV LED light sources currently have problems such as low light power density, mismatch between wavelength and photoinitiator, and high initial cost, which limit their rapid promotion and application in the field of curing. Low light power density is a common problem that restricts the application and promotion of UV LED light sources in various segments of the curing industry. Improving the light power density of UV LED light sources is the primary factor in promoting the rapid development of UV LEDs replacing traditional mercury lamps in the field of curing. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a high light power density ultraviolet light source, which can improve the light density and intensity of the high light power density ultraviolet light source.

[0004] In order to solve the above problems, the present invention provides a high light power density ultraviolet light source, a substrate, and a circuit layer is provided on the substrate;

[0005] A plurality of chips, wherein the plurality of chips are disposed on the substrate, and electrodes of the chips are electrically connected to the circuit layer;

[0006] A reflector, wherein the reflector surrounds the chip and has a height greater than a height of the chip;

[0007] A light-transmitting member is disposed above the chip and the reflecting member.

[0008] In some embodiments, the distance between the reflector and the edge of the chip is less than 50 μm.

[0009] In some embodiments, the reflector includes a reflective plate, which is uprightly arranged in the light emitting direction of the chip and completely surrounds the chip in an uninterrupted manner, reflecting the output light of the chip and directing it to the light output surface arranged in the light output direction.

[0010] In some embodiments, the reflective plate has a thickness of 50 μm to 500 μm.

[0011] In some embodiments, the reflective plate is vertically disposed on the substrate, and the thickness of the reflective plate is consistent at various locations along the vertical direction thereof.

[0012] In some embodiments, the reflective plate is vertically disposed on the substrate, and the space enclosed by the reflective plate gradually becomes smaller from bottom to top.

[0013] In some embodiments, the reflective plate forms an inclined surface inclined toward the center of the chip, and the angle between the inclined surface and the vertical surface is 0° to 30°.

[0014] In some embodiments, the height of the reflective plate is 100 μm to 500 μm higher than the height of the chip.

[0015] In some embodiments, the reflective plate is made of metal, ceramic, glass or plastic and includes a reflective layer on the inner surface of the reflective member;

[0016] The reflective layer includes one or more of an Al reflective layer, an Ag reflective layer, an Al2O3 reflective layer, a Si3N4 reflective layer or a DBR reflective layer.

[0017] In some embodiments, the chip is a flip-chip structure chip, a vertical structure chip, or a face-up structure chip.

[0018] The implementation of the present invention has the following beneficial effects:

[0019] The present invention changes the macroscopic reflector setting in the package body, and makes the reflector close to each chip. The reflector closely surrounds the chip, and the distance between the reflector and the edge of the chip is less than 50μm. The reflector is similar to a microscopic structure. In this way, the light emitting angle of the chip can be concentrated, and the chips can be made as dense as possible, thereby improving the light density and intensity of the high light power density ultraviolet light source. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of the structure of a high optical power density ultraviolet light source provided in Example 1 of the present invention;

[0021] Figure 2 A top view of a high light power density ultraviolet light source provided in Example 1 of the present invention;

[0022] Figure 3 A schematic diagram of the structure of a single chip of a high light power density ultraviolet light source provided in Example 2 of the present invention;

[0023] Figure 4 A top view of a high light power density ultraviolet light source provided in Example 3 of the present invention;

[0024] Figure 5 A schematic structural diagram of a high optical power density ultraviolet light source along the BB' section provided in Example 3 of the present invention;

[0025] Figure 6A schematic structural diagram of a single chip along the AA' section of the high optical power density ultraviolet light source provided in Example 3 of the present invention;

[0026] Figure 7 A schematic diagram of the structure of a single chip of a high light power density ultraviolet light source provided in Example 4 of the present invention;

[0027] Figure 8 A top view of a high light power density ultraviolet light source provided in Example 5 of the present invention;

[0028] Fig. 9 A schematic structural diagram of a high optical power density ultraviolet light source along the CC' section provided in Example 5 of the present invention;

[0029] Fig.10 A schematic structural diagram of a single chip along the D-D' section of the high optical power density ultraviolet light source provided in Example 5 of the present invention;

[0030] Fig.11 A schematic diagram of the structure of a single chip of a high light power density ultraviolet light source provided in Example 6 of the present invention. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention. In addition, it should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0032] In the description of the present invention, it is necessary to understand that the orientations or positional relationships indicated by the terms "upper", "lower", "back surface", "front surface", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0033] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0034] In the present invention, “preferred” is only used to describe an implementation method or example with better effects, and it should be understood that it does not constitute a limitation on the protection scope of the present invention.

[0035] In the present invention, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0036] The current optoelectronic device packaging, especially the ultraviolet and deep ultraviolet parts, is gradually increasing in electrical power and radiation flux with the advancement of technology. For flip-chip ultraviolet chips, the current packaging structure cannot collect light well or the plastic package is not resistant enough to ultraviolet rays, and it is impossible to adjust the light-emitting angle through the combination of reflective cups and lenses on the same packaging platform.

[0037] To solve the above problems, the present invention provides a high light power density ultraviolet light source, comprising:

[0038] A substrate 100, wherein a circuit layer 110 is provided on the substrate 100;

[0039] A plurality of chips 200, wherein the plurality of chips 200 are disposed on the substrate 100, and electrodes of the chips 200 are electrically connected to the circuit layer 110;

[0040] A reflector 300, wherein the reflector 300 surrounds the chip 200, and the height of the reflector 300 is greater than the height of the chip 200;

[0041] The light-transmitting member 400 is disposed above the chip 200 and the reflective member 300 .

[0042] In some embodiments, the chip is a flip chip, and the specific structure is as follows Figure 1 to Figure 3 As shown, including:

[0043] A substrate 100, wherein a circuit layer 110 is disposed on the substrate 100, and an insulating layer 120 is disposed on the circuit layer 110;

[0044] A plurality of flip-chip structure chips, wherein the plurality of flip-chip structure chips are arranged on the substrate 100, and the electrodes of the flip-chip structure chips are electrically connected to the circuit layer 110, and the insulating layer 120 is provided with openings, and the arrangement positions of the openings match the positions where the electrodes of the flip-chip structure chips are electrically connected to the circuit layer 110;

[0045] A reflector 300, wherein the reflector 300 is tightly surrounding the flip-chip structure chip, and the height of the reflector 300 is greater than the height of the flip-chip structure chip;

[0046] The light-transmitting member 400 is disposed above the flip-chip structure chip and the reflective member 300 .

[0047] The substrate 100 , the chip 200 , the reflective element 300 and the light-transmitting element 400 of the high light power density ultraviolet light source are further described below.

[0048] (I) The structure and material of the reflector 300 are as follows:

[0049] In some embodiments, the reflective member 300 includes a reflective plate, which is uprightly arranged in the light emitting direction of the flip-chip structure chip and completely surrounds the vertical structure chip in an uninterrupted manner, reflecting the output light of the vertical structure chip and directing it to the light output surface arranged in the light output direction.

[0050] In some embodiments, the distance between the reflector and the edge of the flip-chip chip is less than 50 μm; preferably, the distance between the reflector and the edge of the flip-chip chip is less than 45 μm; more preferably, the distance between the reflector and the edge of the flip-chip chip is less than 40 μm. The reflector tightly surrounds the flip-chip chip, reflecting the lateral light of the chip 200 to the forward direction, which can concentrate the light emitting angle of the chip 200 and make the chip 200 as dense as possible, thereby improving the light density and intensity of the high light power density ultraviolet light source.

[0051] In some embodiments, the thickness of the reflector is 50 μm to 500 μm. Exemplary thicknesses of the reflector are 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, and 450 μm, but are not limited to the above. If the thickness of the reflector is too thin, it is easy to break, causing reliability and yield problems; if the thickness of the reflector is too thick, it will affect the integration effect and the high-density integration of the chip 200. In some embodiments, the reflector is upright on the insulating layer 120, and the thickness of the reflector is consistent at all points along its upright direction. Alternatively, in some embodiments, the space enclosed by the reflector gradually decreases from bottom to top. Preferably, the reflector forms an inclined plane inclined toward the center of the flip-chip structure chip, and the angle between the inclined plane and the vertical plane is 0° to 30°. The angle cannot be greater than 30°. If it is greater than 30°, the light will be refracted back into the cavity, resulting in a reduction in the light output power. After the reflector forms an inclined surface inclined toward the center of the flip-chip structure chip, it is more helpful to concentrate the light-emitting angle of the chip 200.

[0052] In some embodiments, the height of the reflector is 100 μm to 500 μm higher than the height of the flip-chip structure chip. Exemplary heights of the reflector are 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, and 450 μm, but are not limited to the above. The reflector is arranged close to the chip 200 and has a certain height, and the height of the reflector 300 is greater than the height of the flip-chip structure chip. If the height of the reflector is too low, the lifting effect is not obvious, and if the height of the reflector is too high, the light output power will decrease.

[0053] In order to achieve a good focusing effect, in some embodiments, the reflective plate is made of metal, ceramic, glass or plastic, and includes a reflective layer on the inner surface of the reflective member 300; the reflective layer includes one or more of an Al reflective layer, an Ag reflective layer, an Al2O3 reflective layer, a Si3N4 reflective layer or a DBR reflective layer.

[0054] Finally, the present invention does not limit the method for fixing the reflective member 300 . In some embodiments, the reflective member 300 is fixed on the insulating layer 120 via an adhesive layer.

[0055] (2) Substrate 100

[0056] The substrate 100 can be made of insulating materials such as ceramics and silicon. A circuit layer 110 is disposed on the surface of the substrate 100, and the surface of the circuit layer 110 is covered with an insulating layer 120. The circuit layer 110 leaks circuit electrodes at the electrode position of the chip 200 to achieve circuit connection with the chip 200. The circuit connection method is parallel or series.

[0057] (III) Chip 200

[0058] The chip 200 may be a flip-chip structure chip, which is characterized in that the transistors and components in the chip 200 are flipped, that is, the components are placed below the substrate 100, while the transistors and other components are placed above the substrate 100. However, the flip-chip 200 has a serious lateral light emission, which easily causes the loss and waste of lateral light. The present invention places the reflector 300 close to each chip 200, and the reflector 300 tightly surrounds the flip-chip structure chip, which can not only concentrate the light emission angle of the chip 200, but also make the chip 200 as dense as possible, thereby improving the light density and intensity of the high light power density ultraviolet light source.

[0059] In some embodiments, the chip 200 is square, and the reflector 300 is a hollow square frame. When a plurality of the chips 200 are arranged in an array, the reflector 300 can be a plurality of separate hollow square frames, or can be an integrally formed reflector 300.

[0060] (IV) Light-transmitting element 400

[0061] The material of the light-transmitting element 400 includes but is not limited to quartz glass, high borosilicate glass, and lithium glass. In addition, the light-transmitting element 400 can be a planar structure or a curved lens. The design of the light-transmitting element 400 needs to have high light transmittance to reduce light loss during transmission.

[0062] Furthermore, the present invention also provides a high light power density ultraviolet light source, wherein the chip adopts a vertical structure chip, and the specific structure is as follows: Figures 4 to 7 As shown, including:

[0063] A substrate 100, wherein a circuit layer is disposed on the substrate 100, and a mounting plate 500 is disposed on the circuit layer;

[0064] A plurality of vertical structure chips, wherein the plurality of vertical structure chips are arranged on the mounting board 500;

[0065] A reflector 300, wherein the reflector 300 is tightly surrounding the vertical structure chip, and the height of the reflector 300 is greater than the height of the vertical structure chip;

[0066] The light-transmitting member 400 is disposed above the vertical structure chip and the reflective member 300 .

[0067] The substrate 100 , the chip 200 , the reflective element 300 and the light-transmitting element 400 of the high light power density ultraviolet light source are further described below.

[0068] (I) The structure and material of the reflector 300 are as follows:

[0069] In some embodiments, the reflector 300 includes a reflective plate, which is uprightly arranged in the light emitting direction of the vertical structure chip and completely surrounds the vertical structure chip in an uninterrupted manner, reflecting the output light of the vertical structure chip and directing it to the light output surface arranged in the light output direction.

[0070] In some embodiments, the distance between the reflector and the edge of the vertical structure chip is less than 50 μm; preferably, the distance between the reflector and the edge of the vertical structure chip is less than 45 μm; more preferably, the distance between the reflector and the edge of the vertical structure chip is less than 40 μm. The reflector tightly surrounds the vertical structure chip, reflecting the lateral light of the chip 200 to the forward direction, which can concentrate the light emitting angle of the chip 200 and make the chip 200 as dense as possible, thereby improving the light density and intensity of the high light power density ultraviolet light source.

[0071] In some embodiments, the thickness of the reflective plate is 50 μm to 500 μm. Exemplary thicknesses of the reflective plate are 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, and 450 μm, but are not limited to the above. If the thickness of the reflective plate is too thin, it is easy to break, causing reliability and yield problems; if the thickness of the reflective plate is too thick, it will affect the integration effect and the high-density integration of the chip 200. In some embodiments, the reflective plate is upright on the mounting plate 500, and the thickness of the reflective plate at various locations along its upright direction remains consistent. Alternatively, in some embodiments, the reflective plate is upright on the mounting plate 500, and the space enclosed by the reflective plate gradually decreases from bottom to top. Preferably, the reflective plate forms an inclined plane inclined toward the center of the vertical structure chip, and the angle between the inclined plane and the vertical plane is 0° to 30°. After the reflector forms an inclined surface inclined toward the center of the chip 200 , it is more helpful to concentrate the light emitting angle of the chip 200 .

[0072] In some embodiments, the height of the reflector is 100 μm to 500 μm higher than the height of the vertical structure chip. Exemplary heights of the reflector are 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, and 450 μm, but are not limited to the above. If the height of the reflector is too low, the lifting effect is not obvious, and if the height of the reflector is too high, the light output power will decrease.

[0073] In order to achieve a good focusing effect, in some embodiments, the reflective plate is made of metal, ceramic, glass or plastic, and includes a reflective layer on the inner surface of the reflective member 300; the reflective layer includes one or more of an Al reflective layer, an Ag reflective layer, an Al2O3 reflective layer, a Si3N4 reflective layer or a DBR reflective layer.

[0074] Finally, the present invention does not limit the method for fixing the reflective element 300. In some embodiments, the reflective element 300 is fixed on the insulating layer through an adhesive layer.

[0075] (2) Substrate 100

[0076] The substrate 100 can be made of insulating materials such as ceramics and silicon. A circuit layer is provided on the substrate 100, and the surface of the circuit layer is covered with an insulating layer. The circuit layer leaks circuit electrodes at the electrode position of the chip 200 to achieve circuit connection with the chip 200. The circuit connection method is parallel or series.

[0077] (III) Chip 200

[0078] The chip 200 may be a vertical structure chip, which is a type of chip 200 whose internal structure is vertically layered. In order to realize electrical connection between the vertical structure chip and the circuit layer of the substrate 100, in some embodiments, a through hole 510 is provided on the mounting board 500, and the electrode of the vertical structure chip is electrically connected to the circuit layer through the through hole 510 located below the dam. Preferably, the diameter of the through hole is smaller than the width of the upper dam, so as to facilitate a denser arrangement between chips. It should be noted here that the electrode located on the side of the vertical structure chip close to the substrate 100, or the bottom electrode, can be directly electrically connected to the circuit layer of the substrate 100 through the through hole 510. The electrode on the side of the vertical structure chip away from the substrate 100, or the top electrode, cannot be directly electrically connected to the circuit layer of the substrate 100 through the through hole 510. At this time, in some embodiments, the reflector 300 is disposed on the mounting board 500, and a gap is provided between the reflector 300 and the mounting board 500, and the top electrode of the vertical structure chip extends from the side of the vertical structure chip and the gap from the bottom of the reflector 300 to the outside of the reflector 300, and is electrically connected to the circuit layer on the substrate 100. That is, by leaving a gap between the reflector 300 and the mounting board 500, the top electrode of the vertical structure chip extends from the side of the vertical structure chip and the gap from the bottom of the reflector 300 to the outside of the reflector 300, and then is directly electrically connected to the circuit layer of the substrate 100 through the through hole 510, or, if the vertical structure chip is disposed at the edge of the mounting board 500, it can also be directly electrically connected to the circuit layer of the substrate 100 along the edge of the mounting board 500.

[0079] (IV) Light-transmitting element 400

[0080] The material of the light-transmitting element 400 includes but is not limited to quartz glass, high borosilicate glass, and lithium glass. In addition, the light-transmitting element 400 can be a planar structure or a curved lens. The design of the light-transmitting element 400 needs to have high light transmittance to reduce light loss during transmission.

[0081] At the same time, the present invention further provides a high light power density ultraviolet light source, the chip is a positive structure chip, the specific structure is as follows Figure 8 to Figure 11 As shown, including:

[0082] A substrate 100, wherein a circuit layer is disposed on the substrate 100, and a mounting plate 500 is disposed on the circuit layer;

[0083] A plurality of front-mounted structure chips, wherein the plurality of front-mounted structure chips are arranged on the mounting board 500;

[0084] A reflector 300, wherein the reflector 300 is tightly surrounding the front-mounted structure chip, and the height of the reflector 300 is greater than the height of the front-mounted structure chip;

[0085] The light-transmitting member 400 is disposed above the front-mounted structure chip and the reflective member 300 .

[0086] The substrate 100 , the chip 200 , the reflective element 300 and the light-transmitting element 400 of the high light power density ultraviolet light source are further described below.

[0087] (I) The structure and material of the reflector 300 are as follows:

[0088] In some embodiments, the reflector 300 includes a reflective plate, which is uprightly arranged in the light emitting direction of the upright structure chip and completely surrounds the upright structure chip in an uninterrupted manner, reflecting the emitted light of the upright structure chip and directing it to the light emitting surface arranged in the light emitting direction.

[0089] In some embodiments, the distance between the reflector and the edge of the front-mounted structure chip is less than 50 μm; preferably, the distance between the reflector and the edge of the front-mounted structure chip is less than 45 μm; more preferably, the distance between the reflector and the edge of the front-mounted structure chip is less than 40 μm. The reflector tightly surrounds the front-mounted structure chip, reflecting the lateral light of the chip 200 to the front direction, which can concentrate the light emitting angle of the chip 200 and make the chip 200 as dense as possible, thereby improving the light density and intensity of the high light power density ultraviolet light source.

[0090] In some embodiments, the thickness of the reflective plate is 50 μm to 500 μm. Exemplary thicknesses of the reflective plate are 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, and 450 μm, but are not limited to the above. If the thickness of the reflective plate is too thin, it is easy to break, causing reliability and yield problems; if the thickness of the reflective plate is too thick, it will affect the integration effect and the high-density integration of the chip 200. In some embodiments, the reflective plate is upright on the mounting plate 500, and the thickness of the reflective plate at various locations along its upright direction remains consistent. Alternatively, in some embodiments, the reflective plate is upright on the mounting plate 500, and the space enclosed by the reflective plate gradually decreases from bottom to top. Preferably, the reflective plate forms an inclined plane inclined toward the center of the upright structure chip, and the angle between the inclined plane and the vertical plane is 0° to 30°. After the reflector forms an inclined surface inclined toward the center of the chip 200 , it is more helpful to concentrate the light emitting angle of the chip 200 .

[0091] In some embodiments, the height of the reflector is 100 μm to 500 μm higher than the height of the upright structure chip. Exemplary heights of the reflector are 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, and 450 μm, but are not limited to the above. If the height of the reflector is too low, the lifting effect is not obvious, and if the height of the reflector is too high, the light output power will decrease.

[0092] In order to achieve a good focusing effect, in some embodiments, the reflective plate is made of metal, ceramic, glass or plastic, and includes a reflective layer on the inner surface of the reflective member 300; the reflective layer includes one or more of an Al reflective layer, an Ag reflective layer, an Al2O3 reflective layer, a Si3N4 reflective layer or a DBR reflective layer.

[0093] Finally, the present invention does not limit the method for fixing the reflective element 300. In some embodiments, the reflective element 300 is fixed on the insulating layer through an adhesive layer.

[0094] (2) Substrate 100

[0095] The substrate 100 can be made of insulating materials such as ceramics and silicon. A circuit layer is provided on the substrate 100, and the surface of the circuit layer is covered with an insulating layer. The circuit layer leaks circuit electrodes at the electrode position of the chip 200 to achieve circuit connection with the chip 200. The circuit connection method is parallel or series.

[0096] (III) Chip 200

[0097] The chip 200 may be a positive structure chip, and its structural features are, from top to bottom, an electrode, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and a substrate. In order to realize electrical connection between the positive structure chip and the circuit layer of the substrate 100, in some embodiments, the reflector 300 is disposed on the mounting board 500, and a gap is provided between the reflector 300 and the mounting board 500. The positive electrode and the negative electrode of the positive structure chip extend from the side of the positive structure chip and the gap from the bottom of the reflector 300 to the outside of the reflector 300, and are electrically connected to the circuit layer on the substrate 100. In some embodiments, a through hole 510 is provided on the mounting board 500, and the electrode of the positive structure chip is electrically connected to the circuit layer through the through hole 510. Preferably, the diameter of the through hole is smaller than the width of the upper dam. That is, firstly, by providing a gap between the reflector 300 and the mounting board 500, the positive electrode and the negative electrode of the front-mounted structure chip extend from the side of the front-mounted structure chip and the gap from the bottom of the reflector 300 to the outside of the reflector 300, and then the electrodes of the front-mounted structure chip are electrically connected to the circuit layer through the through hole 510. Alternatively, firstly, by providing a gap between the reflector 300 and the mounting board 500, the positive electrode and the negative electrode of the front-mounted structure chip extend from the side of the front-mounted structure chip and the gap from the bottom of the reflector 300 to the outside of the reflector 300, and then the electrodes of the front-mounted structure chip are electrically connected to the circuit layer.

[0098] (IV) Light-transmitting element 400

[0099] The material of the light-transmitting element 400 includes but is not limited to quartz glass, high borosilicate glass, and lithium glass. In addition, the light-transmitting element 400 can be a planar structure or a curved lens. The design of the light-transmitting element 400 needs to have high light transmittance to reduce light loss during transmission.

[0100] The present invention is further described below with reference to specific embodiments.

[0101] Example 1

[0102] This embodiment provides a high light power density ultraviolet light source, such as Figure 1 and Figure 3 As shown, including:

[0103] A substrate, wherein a circuit layer is provided on the substrate, and an insulating layer is provided on the circuit layer;

[0104] A plurality of flip-chip structure chips, wherein the plurality of flip-chip structure chips are arranged on the substrate, and the electrodes of the flip-chip structure chips are electrically connected to the circuit layer, and the insulating layer is provided with openings, and the arrangement positions of the openings match the positions where the electrodes of the flip-chip structure chips are electrically connected to the circuit layer;

[0105] A reflector, wherein the reflector is tightly surrounded by the flip-chip structure chip, the distance between the reflector and the edge of the flip-chip structure chip is 45 μm, and the height of the reflector is greater than the height of the chip; the reflector comprises a reflector plate, which is vertically arranged in the light emitting direction of the flip-chip structure chip and completely surrounds the flip-chip structure chip in an uninterrupted manner, reflects the emitted light of the flip-chip structure chip and guides it to the light emitting surface arranged in the light emitting direction; the reflector plate is vertically arranged on the insulating layer, and the thickness of the reflector plate at various locations along its vertical direction is kept consistent;

[0106] A light-transmitting member is disposed above the chip and the reflecting member.

[0107] Example 2

[0108] This embodiment provides a high light power density ultraviolet light source, such as Figure 2 As shown, including:

[0109] A substrate, wherein a circuit layer is provided on the substrate, and an insulating layer is provided on the circuit layer;

[0110] A plurality of flip-chip structure chips, wherein the plurality of flip-chip structure chips are arranged on the substrate, and the electrodes of the flip-chip structure chips are electrically connected to the circuit layer, and the insulating layer is provided with openings, and the arrangement positions of the openings match the positions where the electrodes of the flip-chip structure chips are electrically connected to the circuit layer;

[0111] A reflector, wherein the reflector is tightly surrounded by the flip-chip structure chip, the distance between the reflector and the edge of the flip-chip structure chip is 45 μm, and the height of the reflector is greater than the height of the chip; the reflector comprises a reflector plate, which is vertically arranged in the light emitting direction of the flip-chip structure chip and completely surrounds the flip-chip structure chip in an uninterrupted manner, reflects the emitted light of the flip-chip structure chip and guides it to the light emitting surface arranged in the light emitting direction; the reflector plate is vertically arranged on the insulating layer, and the space enclosed by the reflector plate gradually becomes smaller from bottom to top;

[0112] A light-transmitting member is disposed above the chip and the reflecting member.

[0113] Example 3

[0114] This embodiment provides a high light power density ultraviolet light source, such as Figures 4 to 6 As shown, including:

[0115] A substrate, wherein a circuit layer is provided on the substrate, and a mounting plate is provided on the circuit layer;

[0116] A plurality of vertical structure chips, wherein the plurality of vertical structure chips are arranged on the mounting board;

[0117] A reflector, wherein the reflector tightly surrounds the vertical structure chip, the distance between the reflector and the edge of the vertical structure chip is 40 μm, and the height of the reflector is greater than the height of the vertical structure chip; a through hole is provided on the mounting board, and the electrode of the vertical structure chip is electrically connected to the circuit layer through the through hole; the reflector is provided on the mounting board, and a gap is provided between the reflector and the mounting board, and the top electrode of the vertical structure chip extends from the side of the vertical structure chip and the gap from the bottom of the reflector to the outside of the reflector, and is electrically connected to the circuit layer on the substrate through the through hole;

[0118] A light-transmitting member is disposed above the vertical structure chip and the reflecting member.

[0119] Example 4

[0120] This embodiment provides a high light power density ultraviolet light source, such as Figure 7 As shown, including:

[0121] A substrate, wherein a circuit layer is provided on the substrate, and a mounting plate is provided on the circuit layer;

[0122] A plurality of vertical structure chips, wherein the plurality of vertical structure chips are arranged on the mounting board;

[0123] A reflector, wherein the reflector tightly surrounds the vertical structure chip, the distance between the reflector and the edge of the vertical structure chip is 40 μm, and the height of the reflector is greater than the height of the vertical structure chip; a through hole is provided on the mounting board, and the bottom electrode of the vertical structure chip is electrically connected to the circuit layer through the through hole; the reflector is provided on the mounting board, and a gap is provided between the reflector and the mounting board, and the top electrode of the vertical structure chip extends from the side of the vertical structure chip and the gap from the bottom of the reflector to the outside of the reflector, and is not directly electrically connected to the circuit layer on the substrate through the through hole;

[0124] A light-transmitting member is disposed above the vertical structure chip and the reflecting member.

[0125] Example 5

[0126] This embodiment provides a high light power density ultraviolet light source, such as Figures 8 to 10 As shown, including:

[0127] A substrate, wherein a circuit layer is provided on the substrate, and a mounting plate is provided on the circuit layer;

[0128] A plurality of front-mounted structure chips, wherein the front-mounted structure chips are arranged on the mounting board;

[0129] A reflector, the reflector tightly surrounds the front-mounted structure chip, the distance between the reflector and the edge of the front-mounted structure chip is 30 μm, and the height of the reflector is greater than the height of the front-mounted structure chip; a through hole is provided on the mounting board, and the electrode of the front-mounted structure chip is electrically connected to the circuit layer through the through hole; the reflector is arranged on the mounting board, and a gap is provided between the reflector and the mounting board, the positive electrode and the negative electrode of the front-mounted structure chip extend from the side of the front-mounted structure chip and the gap from the bottom of the reflector to the outside of the reflector, and are electrically connected to the circuit layer on the substrate through the through hole;

[0130] A light-transmitting member is disposed above the front-mounted structure chip and the reflective member.

[0131] Example 6

[0132] This embodiment provides a high light power density ultraviolet light source, such as Fig.11 As shown, including:

[0133] A substrate, wherein a circuit layer is provided on the substrate, and a mounting plate is provided on the circuit layer;

[0134] A plurality of front-mounted structure chips, wherein the front-mounted structure chips are arranged on the mounting board;

[0135] A reflector, the reflector tightly surrounds the front-mounted structure chip, the distance between the reflector and the edge of the front-mounted structure chip is 30 μm, and the height of the reflector is greater than the height of the front-mounted structure chip; the reflector is arranged on the mounting board, and a gap is arranged between the reflector and the mounting board, and the positive electrode and the negative electrode of the front-mounted structure chip extend from the side of the front-mounted structure chip and the gap from the bottom of the reflector to the outside of the reflector, and are directly electrically connected to the circuit layer on the substrate without through holes;

[0136] A light-transmitting member is disposed above the front-mounted structure chip and the reflective member.

[0137] In the description of this specification, the description with reference to the terms "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0138] In addition, the above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A high light power density ultraviolet light source, characterized in that: include: A substrate, wherein a circuit layer is provided on the substrate; A plurality of chips, wherein the plurality of chips are disposed on the substrate, and electrodes of the chips are electrically connected to the circuit layer; A reflector, wherein the reflector surrounds the chip and has a height greater than a height of the chip; A light-transmitting member is disposed above the chip and the reflecting member.

2. The high light power density ultraviolet light source according to claim 1, characterized in that: The distance between the reflector and the edge of the chip is less than 50 μm.

3. The high light power density ultraviolet light source according to claim 1, characterized in that: The reflector comprises a reflector plate, which is uprightly arranged in the light emitting direction of the chip and completely surrounds the chip in an uninterrupted manner, reflecting the emitted light of the chip and directing it to a light emitting surface arranged in the light emitting direction.

4. The high light power density ultraviolet light source according to claim 3, characterized in that: The thickness of the reflection plate is 50 μm to 500 μm.

5. The high light power density ultraviolet light source according to claim 3, characterized in that: The reflective plate is vertically arranged on the substrate, and the thickness of the reflective plate at various locations along the vertical direction thereof is kept consistent.

6. The high light power density ultraviolet light source according to claim 3, characterized in that: The reflecting plate is vertically arranged on the base plate, and the space surrounded by the reflecting plate gradually becomes smaller from bottom to top.

7. The high light power density ultraviolet light source according to claim 6, characterized in that: The reflective plate forms an inclined surface inclined toward the center of the chip, and the angle between the inclined surface and the vertical surface is 0° to 30°.

8. The high light power density ultraviolet light source as claimed in claim 3, characterized in that: The height of the reflection plate is 100 μm to 500 μm higher than the height of the chip.

9. The high light power density ultraviolet light source according to claim 3, characterized in that: The reflective plate is made of metal, ceramic, glass or plastic and includes a reflective layer on the inner surface of the reflective member; The reflective layer includes one or more of an Al reflective layer, an Ag reflective layer, an Al2O3 reflective layer, a Si3N4 reflective layer or a DBR reflective layer.

10. The high light power density ultraviolet light source according to claim 1, characterized in that: The chip is a flip-chip structure chip, a vertical structure chip or a face-up structure chip.

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