Resist underlayer composition and method of forming pattern using the composition

Abstract

A resist underlayer composition and a method of forming a pattern using the resist underlayer composition are disclosed. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. The definition of the chemical formula 1 is described in the specification. Chemical formula 1 # imgabs0 #

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0110687 filed in the Korean Intellectual Property Office on August 23, 2023, the entire contents of which are hereby incorporated herein by reference. Technical Field

[0003] Embodiments of the present disclosure relate to a resist underlayer composition and a method of forming a pattern using the resist underlayer composition. Background Art

[0004] Recently, the semiconductor industry has developed into ultra-fine technology with patterns having a size of several nanometers to tens of nanometers. Such ultra-fine technology benefits from efficient photolithography technology.

[0005] Photolithography is a processing method involving the following operations: applying a photoresist layer on a semiconductor substrate (such as (for example) a silicon wafer) to form a thin film, irradiating activating radiation (such as (for example) ultraviolet rays) through a mask pattern on which a device pattern is drawn, developing the photoresist layer to obtain a photoresist pattern, and etching the substrate using the obtained photoresist pattern as a protective film to form a fine pattern corresponding to the pattern on the surface of the substrate.

[0006] As semiconductor patterns become finer and finer, the thickness of the photoresist layer should be thin, and therefore, the thickness of the resist bottom layer should also be thin. Even if the resist bottom layer is thin, it should not cause the photoresist pattern to collapse, should have good adhesion to the photoresist, and should be formed to have a uniform (or substantially uniform) thickness. The resist bottom layer should have a high refractive index and a low extinction coefficient for the light used in photolithography, and have a faster etching rate than the photoresist layer. Summary of the invention

[0007] The resist underlayer composition according to some embodiments of the present disclosure provides a resist underlayer in which adhesion between a resist and a resist underlayer is improved and collapse of a resist pattern does not occur even during a fine patterning process.

[0008] The resist underlayer composition according to some embodiments provides a resist underlayer having excellent etching rate and pattern forming ability by improving cross-linking characteristics and coating uniformity.

[0009] Some embodiments provide a method of forming a pattern using the resist underlayer composition.

[0010] A resist underlayer composition according to some embodiments includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent:

[0011] Chemical formula 1

[0012]

[0013] In Chemical Formula 1,

[0014] L 1 To L 4 are each independently a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C1 to C20 alkylene group,

[0015] L 5 To L 8 each is independently a single bond (e.g., a single covalent bond), a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C2 to C20 alkynylene group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof,

[0016] M 1 To M 8 are each independently a single bond (eg, a single covalent bond), -C(=O)-, -OC(=O)-, or a combination thereof,

[0017] x1 to x4 are each independently 0 or 1, provided that at least two selected from x1 to x4 are each 1,

[0018] y1 to y4 are each independently 0 or 1,

[0019] z1 to z4 are each independently 0 or 1,

[0020] R 1 and R 2 each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted C2-C10 alkenyl, substituted or unsubstituted C2-C10 alkynyl, substituted or unsubstituted C1-C10 heteroalkyl, substituted or unsubstituted C1-C10 heteroalkenyl, substituted or unsubstituted C1-C10 heteroalkynyl, substituted or unsubstituted C3-C20 cycloalkyl, or a combination thereof, and

[0021] * is the connection point with other structural units.

[0022] In some embodiments, in Formula 1, L 1 To L 4 are each independently a substituted or unsubstituted C1 to C10 alkyl group or a substituted or unsubstituted C1 to C10 alkylene group, L 5 To L 8 each is independently a single bond (e.g., a single covalent bond), a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C2 to C10 alkenyl group, a substituted or unsubstituted C2 to C10 alkenylene group, a substituted or unsubstituted C2 to C10 alkynyl group, a substituted or unsubstituted C2 to C10 alkynylene group, or a combination thereof,

[0023] M 1 To M 8 are each independently a single bond (eg, a single covalent bond), -C(=O)-, or a combination thereof, two of the selected from x1 to x4 are each 1, and the other two are each 0, and

[0024] R 1 and R 2 Each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkyl, or a combination thereof.

[0025] In some embodiments, in Formula 1, L 5 To L 8 are each independently a single bond (eg, a single covalent bond), a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, or a combination thereof, M 1 To M 8 are each independently a single bond (eg, a single covalent bond), -C(=O)-, or a combination thereof, and R 1 and R 2 For hydrogen.

[0026] In some embodiments, in Chemical Formula 1, x1 and x4 are each 1, and x2 and x3 are each 0.

[0027] In some embodiments, the structural unit represented by Chemical Formula 1 is represented by one or more selected from Chemical Formula 1-1 and Chemical Formula 1-2:

[0028] Chemical formula 1-1

[0029]

[0030] Chemical formula 1-2

[0031]

[0032] In Chemical Formula 1-1 and Chemical Formula 1-2,

[0033] R 11 , R 12 , R 21 and R 22 are each independently hydrogen, deuterium or a substituted or unsubstituted C1 to C10 alkyl group,

[0034] R 13 , R 14 , R 23 and R 24 are each independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1 to C10 alkyl, substituted or unsubstituted C1 to C10 alkoxy, or a combination thereof,

[0035] n1 and n2 are each independently an integer from 1 to 10, and

[0036] * is the connection point.

[0037] The weight average molecular weight of the polymer may be from about 1,000 g / mole to about 300,000 g / mole.

[0038] The polymer may be included in an amount of about 0.1 wt % to about 50 wt % based on the total weight of the resist underlayer composition.

[0039] The resist base composition may further include one or more additional polymers selected from acrylic resins, epoxy resins, novolac resins, glycoluril resins and melamine resins.

[0040] The resist underlayer composition may further include additives such as a surfactant, a thermal acid generator, a photoacid generator, a plasticizer, or a combination thereof.

[0041] According to some embodiments, a method for forming a pattern includes: forming a film to be etched on a substrate, applying an anti-etching base layer composition according to some embodiments on the film to be etched to form an anti-etching base layer, forming a photoresist pattern on the anti-etching base layer, and sequentially etching the anti-etching base layer and the film to be etched using the photoresist pattern as an etching mask.

[0042] The resist underlayer composition according to some embodiments may improve adhesion between a resist and a resist underlayer, and may provide a resist underlayer in which collapse of a resist pattern does not occur even during a fine patterning process.

[0043] The resist underlayer composition according to some embodiments may provide a resist underlayer having excellent etching rate and pattern forming ability by improving cross-linking characteristics and coating uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The drawings, together with the specification, illustrate embodiments of the presently disclosed subject matter, and, together with the description, serve to explain principles of the embodiments of the presently disclosed subject matter.

[0045] Figures 1 to 6 is a cross-sectional view illustrating a method of forming a pattern using a resist underlayer composition according to some embodiments.

[0046] [Explanation of Reference Numerals]

[0047] 100: Substrate / Semiconductor Substrate

[0048] 102: Film

[0049] 104: Resist base

[0050] 106: Photoresist layer

[0051] 106a: exposure area / photoresist layer

[0052] 106b: Unexposed area / photoresist layer

[0053] 108: Photoresist pattern

[0054] 110: Mask / Exposure Mask

[0055] 112: Organic film pattern

[0056] 114: Thin film pattern DETAILED DESCRIPTION

[0057] The exemplary embodiments of the present disclosure will be described in more detail below, and those skilled in the art can easily implement the exemplary embodiments of the present disclosure after reading the present disclosure. However, the subject matter of the present disclosure can be implemented in many different forms and is not to be construed as being limited to the exemplary embodiments described herein.

[0058] In the drawings, the thickness of layers, films, panels, regions, etc. may be exaggerated for clarity, and the same reference numerals represent the same elements throughout the specification. It should be understood that if an element (such as a layer, film, region, or substrate) is referred to as being "on" another element, the element may be directly on the other element, or intervening elements may also be present. In contrast, if an element is referred to as being "directly on" another element, there are no intervening elements.

[0059] If a definition is not otherwise provided, "substituted" as used herein means that a hydrogen atom of a compound is replaced by a substituent selected from the group consisting of deuterium, a halogen atom (F, Br, Cl, or I), a hydroxyl group, a nitro group, a cyano group, an amino group, an azido group, a carboxamido group, a hydrazine group, a hydrazo group, a carbonyl group, a carbamoyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C1 to C30 alkyl group, a C2 to C30 alkenyl group, a C2 to C30 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C2 to C30 heterocyclyl group, and combinations thereof.

[0060] In some embodiments, two adjacent substituents among the following may be fused together to form a ring: a substituted halogen atom (F, Br, Cl, or I), a hydroxyl group, a nitro group, a cyano group, an amino group, an azido group, a carbamimido group, a hydrazine group, a hydrazone group, a carbonyl group, a carbamoyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C1 to C30 alkyl group, a C2 to C30 alkenyl group, a C2 to C30 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, or a C2 to C30 heterocyclyl group.

[0061] As used herein, "hetero" means that a substance contains 1 to 3 heteroatoms selected from N, O, S, Se and P, unless otherwise defined.

[0062] As used herein, "aryl" refers to a group having at least one hydrocarbon aromatic moiety, and the at least one hydrocarbon aromatic moiety broadly refers to hydrocarbon aromatic moieties connected by a single bond (e.g., a single covalent bond) and non-aromatic fused rings including directly or indirectly fused hydrocarbon aromatic moieties. The aryl group may be a monocyclic, polycyclic, or fused polycyclic (e.g., rings that share adjacent pairs of carbon atoms) functional group.

[0063] As used herein, "heterocyclic group" includes heteroaryl and cyclic groups containing at least one heteroatom selected from N, O, S, P and Si to replace the carbon of the cyclic compound, such as aryl, cycloalkyl, fused rings thereof or combinations thereof. If the heterocyclic group is a fused ring, each ring or the entire ring of the heterocyclic group may include at least one heteroatom.

[0064] In some embodiments, the substituted or unsubstituted aryl and / or substituted or unsubstituted heterocyclic group may be substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthracenyl, substituted or unsubstituted phenanthrenyl, substituted or unsubstituted tetraphenyl, substituted or unsubstituted pyrenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted quaterphenyl, substituted or unsubstituted chrysene, substituted or unsubstituted triphenylene, substituted or unsubstituted tetraphenylene, substituted or unsubstituted chrysene, substituted or unsubstituted triphenylene, substituted or unsubstituted tetraphenylene, substituted or unsubstituted terphenylene, substituted or unsubstituted quaternaryl, substituted or unsubstituted chrysene, substituted or unsubstituted triphenylene, substituted or unsubstituted tetraphenylene, substituted or unsubstituted terphenylene, substituted or unsubstituted quaternaryl, substituted or unsubstituted chrysene, substituted or unsubstituted terphenylene, substituted or unsubstituted quaternaryl ... substituted or unsubstituted peryl, substituted or unsubstituted indenyl, substituted or unsubstituted furanyl, substituted or unsubstituted thienyl, substituted or unsubstituted pyrrolyl, substituted or unsubstituted pyrazolyl, substituted or unsubstituted imidazolyl, substituted or unsubstituted triazolyl, substituted or unsubstituted oxazolyl, substituted or unsubstituted thiazolyl, substituted or unsubstituted oxadiazolyl, substituted or unsubstituted thiadiazolyl, substituted or unsubstituted pyridinyl, substituted or unsubstituted pyrimidinyl , substituted or unsubstituted pyrazinyl, substituted or unsubstituted triazinyl, substituted or unsubstituted benzofuranyl, substituted or unsubstituted benzothiophenyl, substituted or unsubstituted benzimidazolyl, substituted or unsubstituted indolyl, substituted or unsubstituted quinolyl, substituted or unsubstituted isoquinolyl, substituted or unsubstituted quinazolinyl, substituted or unsubstituted quinoxalinyl, substituted or unsubstituted naphthyridinyl, substituted or unsubstituted benzoxazinyl, substituted or unsubstituted benzo Thiazinyl, substituted or unsubstituted acridinyl, substituted or unsubstituted phenazinyl, substituted or unsubstituted phenothiazinyl, substituted or unsubstituted phenoxazinyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted dibenzofuranyl, substituted or unsubstituted dibenzothienyl, substituted or unsubstituted carbazolyl, pyridoindolyl, benzopyridooxazinyl, benzopyridothiazinyl, 9,9-dimethyl-9,10-dihydroacridinyl, combinations thereof, or fused rings of the combinations thereof, but are not limited thereto.

[0065] If no specific definition is otherwise provided, the term "combination" as used herein means mixing and / or copolymerization.

[0066] In addition, "polymer" as used herein may include both oligomers and polymers.

[0067] If no definition is otherwise provided, the "weight average molecular weight" used herein can be measured by dissolving a powder sample (the column may be Shodex LF-804, and the standard sample may be Showa polystyrene) in tetrahydrofuran (THF) and using Agilent Technologies' 1200 series Gel Permeation Chromatography (GPC).

[0068] If no definition is otherwise provided, "*" as used herein refers to the point of attachment of a structural unit of a compound or a moiety of a compound.

[0069] In the semiconductor industry, efforts are being made to reduce the size of chips. Therefore, the line width of the resist patterned using photolithography should be reduced to a level of tens of nanometers, and the pattern formed in this way is used to transfer the pattern to the lower material by utilizing an etching process on the lower substrate. However, as the pattern size of the resist becomes smaller, the height (e.g., aspect ratio) of the resist that can withstand the line width is limited, and therefore, the resist may not have suitable or sufficient resistance in the etching step. Therefore, if a thin resist material is used, if the substrate to be etched is thick, and / or if a deep pattern is required, a resist bottom layer has been used to compensate for this.

[0070] As the thickness of the resist becomes thinner, the resist bottom layer should become thinner, and even if the resist bottom layer is thin, the photoresist pattern should not collapse. For this reason, the resist bottom layer should have excellent adhesion to the photoresist. In an embodiment, when forming a thin resist bottom layer, the cross-linking characteristics and coating uniformity of the resist bottom layer composition should be improved.

[0071] The resist underlayer composition according to some embodiments includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent:

[0072] Chemical formula 1

[0073]

[0074] In chemical formula 1, L 1 To L 4 are each independently a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C1 to C20 alkylene group, L 5 To L 8each is independently a single bond (e.g., a single covalent bond), a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C2 to C20 alkynylene group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof,

[0075] M 1 To M 8 are each independently a single bond (eg, a single covalent bond), -C(=O)-, -OC(=O)-, or a combination thereof,

[0076] x1 to x4 are each independently 0 or 1, provided that at least two selected from x1 to x4 are each 1,

[0077] y1 to y4 are each independently 0 or 1,

[0078] z1 to z4 are each independently 0 or 1,

[0079] R 1 and R 2 each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted C2-C10 alkenyl, substituted or unsubstituted C2-C10 alkynyl, substituted or unsubstituted C1-C10 heteroalkyl, substituted or unsubstituted C1-C10 heteroalkenyl, substituted or unsubstituted C1-C10 heteroalkynyl, substituted or unsubstituted C3-C20 cycloalkyl, or a combination thereof, and

[0080] * is the connection point with other structural units.

[0081] The polymer shown by the structural unit represented by Chemical Formula 1 includes a glycoluril structure formed by two cyclic urea groups fused by a chain connecting the same two carbon atoms. The glycoluril structure can form a sp bond between polymers by including a carbonyl group (-C(=O)-) and two nitrogen atoms (including a lone pair of electrons) connected to the carbonyl group (-C(=O)-). 2 -sp 2 Although the present disclosure is not limited by any particular mechanism or theory, it is believed that the bottom layer composition comprising a polymer has a high electron density and will increase the density of the film formed by the bottom layer composition, thereby providing an ultra-thin film with a dense structure. In some embodiments, the efficiency of the composition can be improved during exposure.

[0082] In some embodiments, the substituents in the structural unit and / or the linking groups connected to the nitrogen (N) of glycoluril can be adjusted to control the crosslinking characteristics and coating uniformity of the resist bottom layer composition comprising the polymer. For example, if the linking group bonded to the N of glycoluril includes functional groups such as lone pairs of electrons (e.g., -O-, -C(=O)- and / or similar lone pairs of electrons), and / or includes hydrophilic substituents such as hydroxyl or alkoxy, the polymer may have more crosslinkable sites. In some embodiments, the resist bottom layer formed by the composition comprising a polymer with more crosslinking sites may have a denser structure. In some embodiments, the linking group connected to the N of glycoluril may include a hydrophobic group (e.g., an alkylene group, an alkenylene group, an alkynylene group and / or a similar hydrophobic group), which can improve the coating properties and etching rate of the composition comprising many such hydrophobic groups. In some embodiments, the substituents or linking groups in the structural unit represented by Chemical Formula 1 can be adjusted to optimize or improve the crosslinking characteristics and / or coating uniformity of the composition comprising the polymer. For the same reason, the etching rate and pattern forming ability of the resist underlayer formed from the composition can be improved.

[0083] If x1 to x4 of Chemical Formula 1 are each 1, each of the four ends extending from the glycoluril is connected to each different structural unit, for example, if at least two or more selected from x1 to x4 are each 1, two or more different structural units can be connected. Therefore, the resist bottom layer formed by the composition comprising the polymer can have a much denser structure. In some embodiments, if two or more selected from x1 to x4 are each 1, the coating uniformity of the composition comprising the polymer can be further improved.

[0084] In chemical formula 1, L 1 To L 4 Each is independently a substituted or unsubstituted C1 to C10 alkyl group or a substituted or unsubstituted C1 to C10 alkylene group, such as a substituted or unsubstituted C1 to C5 alkyl group or a substituted or unsubstituted C1 to C5 alkylene group, such as a substituted or unsubstituted methyl group or methylene group, or a substituted or unsubstituted ethyl group or ethylene group, but is not limited thereto. By including such a linking group, the fluidity of the polymer including the structural unit can be improved, and the solubility in the solvent can be increased.

[0085] L 5 To L 8Each is independently a single bond (e.g., a single covalent bond), a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C2 to C10 alkenyl group, a substituted or unsubstituted C2 to C10 alkenylene group, a substituted or unsubstituted C2 to C10 alkynyl group, a substituted or unsubstituted C2 to C10 alkynylene group, or a combination thereof, such as a single bond (e.g., a single covalent bond), a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, or a combination thereof, but is not limited thereto. If x1 to x4 are each 0, then L 5 To L 8 may exist as a monovalent group, and if x1 to x4 are each 1, then L 5 To L 8 Can exist as a divalent radical.

[0086] In Chemical Formula 1, R 1 and R 2 Each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkyl, or a combination thereof, such as hydrogen or deuterium, but is not limited thereto.

[0087] In some embodiments, in Formula 1, L 1 To L 4 are each independently a substituted or unsubstituted methyl or methylene group, and L 5 To L 8 are each independently a single bond (eg, a single covalent bond), a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, or a combination thereof, M 1 To M 8 are each independently a single bond (eg, a single covalent bond), -C(=O)-, or a combination thereof, and R 1 and R 2 Hydrogen, but not limited thereto.

[0088] In Chemical Formula 1, x1 to x4 are each independently 0 or 1, two or more selected from x1 to x4 are each 1, or three or more selected from x1 to x4 are each 1, for example, two selected from x1 to x4 are each 1, for example, x1 and x4 may each be 1 and x2 and x3 may each be 0, for example, x1 and x2 may each be 1 and x3 and x4 may each be 0, or for example, x1 and x3 may each be 1 and x2 and x4 may each be 0. For example, x1 and x4 are each 1, and x2 and x3 are each 0, but it is not limited thereto.

[0089] As an example, Chemical Formula 1 can be expressed by one or more selected from Chemical Formula 1-1 and Chemical Formula 1-2:

[0090] Chemical formula 1-1

[0091]

[0092] Chemical formula 1-2

[0093]

[0094] In Chemical Formula 1-1 and Chemical Formula 1-2, R 11 , R 12 , R 21 and R 22 are each independently hydrogen, deuterium or a substituted or unsubstituted C1 to C10 alkyl group, R 13 , R 14 , R 23 and R 24 Each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted C1-C10 alkoxy, or a combination thereof, and n1 and n2 are each independently one selected from an integer of 1 to 10.

[0095] In some embodiments, R 11 , R 12 , R 21 and R 22 Each is independently a substituted or unsubstituted C1 to C5 alkyl group, such as a substituted or unsubstituted methyl group or a substituted or unsubstituted butyl group, but is not limited thereto.

[0096] In some embodiments, R 13 , R 14 , R 23 and R 24 Each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C5 alkyl, and for example is hydrogen, deuterium or hydroxyl, but is not limited thereto.

[0097] In some embodiments, n1 and n2 are each independently one of integers selected from 1 to 5, such as one of integers selected from 1 to 3, and such as an integer selected from 1 or 2, but are not limited thereto.

[0098] The polymer may have a weight average molecular weight of about 1,000 g / mol to about 300,000 g / mol, such as about 3,000 g / mol to about 200,000 g / mol, such as about 3,000 g / mol to about 100,000 g / mol, such as about 3,000 g / mol to about 90,000 g / mol, such as about 3,000 g / mol to about 80,000 g / mol, such as about 3,000 g / mol to about 70,000 g / mol, such as about 3,000 g / mol to about 50,000 g / mol, such as about 5,000 g / mol to about 50,000 g / mol, or such as about 5,000 g / mol to about 30,000 g / mol, but is not limited thereto. By making the weight average molecular weight within the above range, the carbon content and solubility in the solvent of the resist base composition containing the polymer can be adjusted and / or optimized or improved.

[0099] In some embodiments, the polymer may be included in an amount of about 0.1 wt % to about 50 wt % based on the total weight of the resist bottom layer composition. In some embodiments, the polymer may be included in an amount of about 10 wt % to about 50 wt %, such as about 20 wt % to about 50 wt %, such as about 20 wt % to about 40 wt %, or such as about 20 wt % to about 30 wt %, but is not limited thereto. By including a polymer within the above range in the composition, the thickness and coating uniformity of the resist bottom layer can be adjusted.

[0100] According to some embodiments, the resist bottom layer composition may include a solvent. According to some embodiments, the solvent is not particularly limited, as long as it has suitable or sufficient solubility and / or dispersibility for polymers and compounds, but the solvent may be, for example, propylene glycol, propylene glycol diacetate, methoxypropylene glycol, diethylene glycol, diethylene glycol butyl ether, tri(ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate (ethyllactate, EL), γ-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, methyl pyrrolidone, methyl 2-hydroxyisobutyrate, acetylacetone, ethyl 3-ethoxypropionate (ethyl 3-ethoxypropionate, EEP), or a combination thereof.

[0101] In addition to the polymer, the compound and the solvent, the resist base composition according to some embodiments may further include one or more additional polymers selected from acrylic resins, epoxy resins, novolac resins, glycoluril resins and melamine resins, but is not limited thereto.

[0102] The resist underlayer composition according to some embodiments may further include an additive including a surfactant, a thermal acid generator, a plasticizer, or a combination thereof.

[0103] If a resist base layer is formed, a surfactant may be used to improve coating defects that occur as the solid content increases. For example, the surfactant may be alkylbenzene sulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt, etc., but is not limited thereto.

[0104] The thermal acid generator may be, for example, an acidic compound, such as p-toluenesulfonic acid (PTSA), trifluoromethanesulfonic acid, pyridinium p-toluenesulfonate (PPTS), salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthoic acid and / or benzoin toluenesulfonate, 2-nitrobenzyl toluenesulfonate, and / or other organic alkyl sulfonates, but is not limited thereto.

[0105] The plasticizer is not particularly limited, and various suitable types (or kinds) of plasticizers generally used in the art can be used. Examples of plasticizers may include low molecular weight compounds (e.g., phthalates, adipates, phosphates, trimellitates, and citrates), as well as polyether compounds, polyester compounds, and polyacetal compounds.

[0106] The additive may be included in an amount of about 0.001 to about 40 parts by weight based on 100 parts by weight of the resist base composition. By including the additive within the above range, solubility may be improved without (or substantially without) changing the optical properties of the resist base composition.

[0107] According to some embodiments, a resist underlayer manufactured using the resist underlayer composition is provided. The resist underlayer can be obtained, for example, by coating the resist underlayer composition on a substrate and then curing it through a heat treatment process.

[0108] In the following, reference will be made to Figures 1 to 6 A method for forming a pattern using the aforementioned resist underlayer composition is described.

[0109] Figures 1 to 6 is a cross-sectional view for explaining a method of forming a pattern using the resist underlayer composition according to the present disclosure.

[0110] Reference Figure 1 First, an object to be etched is prepared. An example of the object to be etched may be a thin film 102 on a semiconductor substrate 100. Hereinafter, only an embodiment in which the object to be etched is the thin film 102 will be described, but the present disclosure is not limited thereto. The surface of the thin film 102 is pre-cleaned to remove contaminants remaining on the thin film 102. The thin film 102 may be, for example, a silicon nitride film, a polysilicon film, and / or a silicon oxide film.

[0111] Then, the resist underlayer composition is applied onto the surface of the cleaned thin film 102 by a spin coating method.

[0112] Then, a drying process and a baking process are performed to form a resist bottom layer 104 on the thin film. The baking process may be performed at about 100° C. to about 500° C., for example, at about 100° C. to about 300° C. A more detailed description of the resist bottom layer composition will not be repeated here to avoid redundancy, because it has been described in more detail above.

[0113] Reference Figure 2 , a photoresist is coated on the resist bottom layer 104 to form a photoresist layer 106 .

[0114] Examples of photoresists may include a positive photoresist containing a naphthoquinone diazide compound and a novolac resin, a chemically-amplified positive photoresist containing an acid generator capable of dissociating an acid by exposure, a compound that decomposes in the presence of an acid and has enhanced solubility in an alkaline aqueous solution, and an alkali-soluble resin, a chemically-amplified positive photoresist containing an alkali-soluble resin capable of applying a resin that improves solubility in an alkaline aqueous solution, and the like.

[0115] Subsequently, a first baking process is performed to heat the substrate 100 having the photoresist layer 106 formed thereon. The first baking process may be performed at a temperature of about 90°C to about 120°C.

[0116] Reference Figure 3 , selectively exposing the photoresist layer 106. In order to explain the exposure process for exposing the photoresist layer 106 as an example, an exposure mask having a set pattern or a predetermined pattern is placed on a mask stage of an exposure device, and the exposure mask 110 is placed on the photoresist layer 106. Subsequently, by irradiating light to the mask 110, a set portion or a predetermined portion of the photoresist layer 106 formed on the substrate 100 selectively reacts with the light passing through the exposure mask.

[0117] For example, examples of light that can be used in the exposure process may include short-wavelength light such as i-line activating radiation having a wavelength of 365 nm, KrF excimer laser having a wavelength of 248 nm, and ArF excimer laser having a wavelength of 193 nm. In some embodiments, extreme ultraviolet (EUV) having a wavelength of 13.5 nm may be used, which corresponds to extreme ultraviolet light.

[0118] The exposed region 106a of the photoresist layer 106 may be relatively hydrophilic compared to the unexposed region 106b of the photoresist layer 106. Therefore, the exposed region 106a and the unexposed region 106b of the photoresist layer 106 may have different solubilities from each other.

[0119] Subsequently, a second baking process is performed on the substrate 100. The second baking process may be performed at a temperature of about 90° C. to about 150° C. The exposed region of the photoresist layer becomes easily dissolved in a set solvent or a predetermined solvent due to the second baking.

[0120] Reference Figure 4 As an example, the photoresist layer 106 a corresponding to the exposure area is dissolved, and then the photoresist layer 106 a is removed using tetra-methyl ammonium hydroxide (TMAH) or the like, and the remaining photoresist layer 106 b after development forms a photoresist pattern 108 .

[0121] Subsequently, the resist bottom layer 104 is etched using the photoresist pattern 108 as an etching mask. Figure 5 The organic film pattern 112 is shown. Etching can be performed, for example, by dry etching using an etching gas, and the etching gas can be, for example, CHF3, CF4, Cl2, O2 or a mixture thereof. As described above, since the resist underlayer formed by the resist underlayer composition according to some embodiments has a fast etching rate, a smooth etching process can be performed in a short time.

[0122] Reference Figure 6 , the exposed thin film 102 is etched by applying the photoresist pattern 108 as an etching mask. As a result, the thin film is formed into a thin film pattern 114. In the exposure process performed as described above, the thin film pattern formed by the exposure process performed using a short wavelength light source such as an activating radiation i-line (wavelength: 365nm), a KrF excimer laser (wavelength: 248nm), and an ArF excimer laser (wavelength: 193nm) may have a width of tens of nanometers to hundreds of nanometers, and the thin film pattern 114 formed by the exposure process performed using an EUV light source may have a width of less than or equal to about 20nm.

[0123] Hereinafter, embodiments of the present disclosure will be described in more detail through examples related to the synthesis of the above polymer and the preparation of a resist underlayer composition comprising the polymer. However, the present disclosure is not technically limited to the following examples.

[0124] Polymer synthesis

[0125] Synthesis example 1

[0126] 0.5 g of p-toluenesulfonic acid (PTSA), 30 g of 1,3,4,6-tetrakis(methoxymethyl)glycoluril (TMGU), 3 g of 1,2-ethylene glycol and 150 g of 1,4-dioxane were added to a 500 ml 2-necked round-bottom flask equipped with a condenser, and then reacted at 80° C. for 10 hours. After the reaction was performed, the resulting reaction solution was cooled to room temperature. Subsequently, triethylamine was added thereto to neutralize the reaction solution, and then purified, thereby obtaining a polymer 1 including a structural unit represented by Chemical Formula 2.

[0127] Chemical formula 2

[0128]

[0129] Synthesis example 2

[0130] A polymer 2 including a structural unit represented by Chemical Formula 3 was obtained in the same manner as Synthesis Example 1 except that 6 g of succinic acid was used instead of 1,2-ethylene glycol.

[0131] Chemical formula 3

[0132]

[0133] Synthesis example 3

[0134] Polymer 3 including the structural unit represented by Chemical Formula 4 was obtained in the same manner as Synthesis Example 1, except that 45 g of 1,3,4,6-tetrakis(butoxymethyl)glycoluril was used instead of 30 g of 1,3,4,6-tetrakis(methoxymethyl)glycoluril (TMGU) and 7.5 g of 2,3-dihydroxysuccinic acid was used instead of 1,2-ethylene glycol.

[0135] Chemical formula 4

[0136]

[0137] Comparative Synthesis Example 1

[0138] 20 grams of 1,3-diallyl-5-(2,2-dimethyl)-isocyanurate, 6.0 grams of 1,3-propanedithiol, 1 gram of azobisisobutyronitrile (AIBN) and 50 grams of N,N-dimethylformamide were added to a 250 ml four-necked flask to prepare a reaction solution, and a condenser was connected. The resulting reaction solution was heated at 50°C for 5 hours to react, and then cooled to room temperature. Subsequently, under stirring, the reaction solution was added dropwise to a beaker containing 300 grams of distilled water (DIW) to produce a colloid, which was dissolved in 30 grams of tetrahydrofuran (THF). The obtained resin solution was treated with toluene to form a precipitate, and single and low molecular weight molecules were removed from the precipitate, thereby obtaining a polymer (weight average molecular weight (Mw) = 5,500 g / mol) comprising a structural unit represented by Chemical Formula 5.

[0139] Chemical formula 5

[0140]

[0141] Comparative Synthesis Example 2

[0142] 148.6 grams of 1,3,5-triglycidyl isocyanurate, 60.0 grams of 2,2'-thiodiacetic acid, 9.1 grams of benzyl triethylammonium chloride and 350 grams of N,N-dimethylformamide were added to a 1-liter 2-necked round-bottom flask, and a condenser was connected. After the temperature was raised to 100°C and allowed to react for 8 hours, the resulting reaction solution was cooled to room temperature (23°C). Subsequently, the reaction solution was transferred to a 1-liter wide-mouth bottle, and then washed three times with hexane, and then washed with pure water. The colloidal resin thus obtained was completely dissolved in 80 grams of THF, and then slowly added dropwise to 700 grams of toluene under stirring. Subsequently, the solvent was removed therefrom, thereby obtaining a polymer (weight average molecular weight (Mw) = 8,200 grams / mole) comprising a structural unit represented by Chemical Formula 6.

[0143] Chemical formula 6

[0144]

[0145] Comparative Synthesis Example 3

[0146] 0.5 g of p-toluenesulfonic acid (PTSA), 30 g of the polymer of Comparative Synthesis Example 1, 3 g of 1,3,4,6-tetrakis (methoxymethyl) glycoluril (TMGU) and 150 g of methyl 2-hydroxyisobutyrate were added to a 500 ml 2-necked round-bottom flask equipped with a condenser, and then reacted at 80°C for 2 hours. After the reaction was carried out, the resulting reaction solution was cooled to room temperature. Subsequently, the reaction solution was neutralized by adding triethylamine thereto, and then purified, thereby obtaining a polymer (weight average molecular weight (Mw) = 6,200 g / mol) including a structural unit represented by Chemical Formula 7.

[0147] Chemical formula 7

[0148]

[0149] Example 1

[0150] A resist underlayer composition was prepared by completely dissolving 0.1 g of the polymer of Synthesis Example 1, 0.01 g of pyridinium p-toluenesulfonate (PPTS) in 90 g of propylene glycol monomethyl ether and 5 g of ethyl lactate and then further diluting the resulting solution with a solvent.

[0151] Example 2

[0152] A resist underlayer composition was prepared in the same manner as in Example 1, except that the polymer of Synthesis Example 2 was used instead of the polymer of Synthesis Example 1.

[0153] Example 3

[0154] A resist underlayer composition was prepared in the same manner as in Example 1, except that the polymer of Synthesis Example 3 was used instead of the polymer of Synthesis Example 1.

[0155] Comparative Example 1

[0156] A resist underlayer composition was prepared by completely dissolving 0.5 g of the polymer of Comparative Synthesis Example 1, 0.15 g of PD1174 (crosslinker, Tokyo Chemical Industry, TCI), and 0.01 g of pyridinium p-toluenesulfonate (PPTS) in 90 g of propylene glycol monomethyl ether and 5 g of ethyl lactate, and then diluting the resulting solution by further using a solvent.

[0157] Comparative Example 2

[0158] A resist underlayer composition was prepared in the same manner as in Comparative Example 1, except that the polymer of Comparative Synthesis Example 2 was used instead of the polymer of Comparative Synthesis Example 1.

[0159] Comparative Example 3

[0160] A resist underlayer composition was prepared in the same manner as in Comparative Example 2, except that PD1174 (crosslinking agent, TCI) was not used.

[0161] Comparative Example 4

[0162] A resist underlayer composition was prepared in the same manner as in Comparative Example 1, except that the polymer of Comparative Synthesis Example 3 was used instead of the polymer of Comparative Synthesis Example 1.

[0163] Evaluation 1: Evaluation of coating uniformity

[0164] 2 ml of each of the compositions of Examples 1 to 3 and Comparative Examples 1 to 4 was poured onto an 8-inch wafer and spin-coated at a main speed of 1,500 rpm for 20 seconds using an autotracker (ACT-8, TOKYO ELECTRON LIMITED, TEL) and cured at 205° C. for 60 seconds to form thick film.

[0165] The thickness of each film was measured at 51 points, and the difference between the maximum thickness and the minimum thickness was calculated from the thickness as shown in calculation equation 1 to evaluate the coating uniformity. The smaller the coating uniformity value below, the better the coating uniformity. Specifically, if the coating uniformity is less than "Excellent" is given if the coating uniformity is greater than or equal to and less than If the coating uniformity is greater than or equal to The results are shown in Table 1.

[0166] Calculation equation 1

[0167]

[0168] Table 1

[0169]

[0170] Referring to Table 1, the resist underlayer formed by the composition according to the example exhibits coating uniformity less than or equal to that of the resist underlayer formed by the composition according to the comparative example, which confirms that the composition according to the example has more excellent resist underlayer coating uniformity than the composition according to the comparative example.

[0171] Evaluation 2: Etch rate evaluation

[0172] Each of the resist bottom layer compositions according to Examples 1 to 3 and Comparative Examples 1 to 4 was spin-coated on a silicon wafer and heat-treated at 240° C. for 120 seconds to form a thin film, and the thickness of the film was measured. Subsequently, the film was dry-etched for 60 seconds using a N2 / O2 mixed gas, and then its thickness was measured again. In addition, the film was dry-etched for 100 seconds using a CFx gas, and then its thickness was also measured. As shown in calculation equation 2, the film thickness before and after dry etching is used together with the etching time to calculate the etching rate, and other etching rates are relatively converted based on the etching rate of Example 1, and the results are shown in Table 2.

[0173] Calculation equation 2

[0174]

[0175] Table 2

[0176]

[0177] Referring to Table 2, the thin film formed of the resist underlayer composition according to the Example had a higher etching rate than the thin film formed of the resist underlayer composition according to the Comparative Example.

[0178] Assessment 3: Evaluation of contact angle

[0179] 2 ml of the resist bottom layer composition according to Examples 1 to 3 and Comparative Examples 1 to 4 was taken, respectively, poured on a 4-inch wafer, and spun at 1,500 rpm for 20 seconds using a spin coater (Mikasa Co., Ltd.). Subsequently, the coated composition was cured at 210° C. for 90 seconds to form a thin film, and then the contact angle was measured by dropping distilled water (DIW) on the surface. The smaller the contact angle, the better the adhesion to the resist, and the contact angle measurement values ​​are shown in Table 3.

[0180] Table 3

[0181] Contact angle (°) Example 1 30 Example 2 28 Example 3 32 Comparative Example 1 63 Comparative Example 2 64 Comparative Example 3 66 Comparative Example 4 62

[0182] Referring to Table 3, the resist underlayer formed of the composition according to the Example exhibited a low contact angle with distilled water and excellent adhesiveness, compared with the resist underlayer formed of the composition according to the Comparative Example.

[0183] Assessment 4: Assessment of chemical resistance

[0184] 2 ml of the resist bottom layer composition according to Examples 1 to 3 and Comparative Examples 1 to 4 was taken respectively, poured on a 4-inch wafer, and spun at 1,500 rpm for 20 seconds by a spin coater (Mikasa Co., Ltd.). Subsequently, the coated composition was cured at 210°C for 90 seconds to form a thin film, and the thickness of the film was measured using a film thickness meter manufactured by K-MAC. After the film was immersed in a mixed solvent of ethyl 3-ethoxypropionate (EEP) and ethyl lactate (EL) (7:3 (v / v)) for 1 minute and taken out, the thickness of the film was measured again. The thickness reduction rate before and after immersion was calculated as shown in calculation equation 3 to evaluate the chemical resistance of the bottom layer. The smaller the thickness reduction rate, the better the chemical resistance. Specifically, if the thickness reduction rate is less than 2%, "excellent" is given, if the thickness reduction rate is greater than or equal to 2% and less than 5%, "general" is given, and if the thickness reduction rate is greater than or equal to 5%, "poor" is given. The results are shown in Table 4.

[0185] Calculation equation 3

[0186] Base thickness reduction rate (%) = {(film thickness before immersion - film thickness after immersion) / film thickness before immersion}

[0187] Table 4

[0188] Thickness reduction rate (%) Example 1 Excellent Example 2 Excellent Example 3 Excellent Comparative Example 1 Excellent Comparative Example 2 generally Comparative Example 3 Poor Comparative Example 4 Poor

[0189] As can be seen from Table 4, the thickness reduction rate of the example before and after immersion in the mixed solution of EEP and EL is smaller than the thickness reduction rate of the comparative example before and after immersion in the mixed solution of EEP and EL, and therefore, the chemical resistance of the resist base layer according to the example is better than the chemical resistance of the film according to the comparative example.

[0190] In the above, exemplary embodiments of the present disclosure have been described and illustrated, however, it should be obvious to those skilled in the art that the present disclosure is not limited to the described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the present disclosure. Therefore, the modified or changed embodiments themselves may not be understood separately from the technical concepts and aspects of the present disclosure, and the modified embodiments are within the scope of the claims of the present disclosure and their equivalents.

Claims

1. A resist bottom layer composition, comprising: A polymer including a structural unit represented by Chemical Formula 1, and a solvent: Chemical formula 1 in, In Chemical Formula 1, L 1 To L 4 are each independently a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C1 to C20 alkylene group, L 5 To L 8 each is independently a single bond, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C2 to C20 alkynylene group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof, M 1 To M 8 are each independently a single bond, -C(=O)-, -OC(=O)- or a combination thereof, x1 to x4 are each independently 0 or 1, provided that at least two selected from x1 to x4 are each 1, y1 to y4 are each independently 0 or 1, z1 to z4 are each independently 0 or 1, R 1 and R 2 each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted C2-C10 alkenyl, substituted or unsubstituted C2-C10 alkynyl, substituted or unsubstituted C1-C10 heteroalkyl, substituted or unsubstituted C1-C10 heteroalkenyl, substituted or unsubstituted C1-C10 heteroalkynyl, substituted or unsubstituted C3-C20 cycloalkyl, or a combination thereof, and * is the connection point with other structural units.

2. The resist underlayer composition according to claim 1, wherein in Chemical Formula 1, L 1 To L 4 are each independently a substituted or unsubstituted C1 to C10 alkyl group or a substituted or unsubstituted C1 to C10 alkylene group, L 5 To L 8 each is independently a single bond, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C2 to C10 alkenyl group, a substituted or unsubstituted C2 to C10 alkenylene group, a substituted or unsubstituted C2 to C10 alkynyl group, a substituted or unsubstituted C2 to C10 alkynylene group, or a combination thereof, M 1 To M 8 are each independently a single bond, -C(=O)- or a combination thereof, Two of the values ​​selected from x1 to x4 are each 1, and the other two are 0, and R 1 and R 2 Each is independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkyl, or a combination thereof.

3. The resist underlayer composition according to claim 1, wherein in Chemical Formula 1, L 5 To L 8 are each independently a single bond, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkylene group, or a combination thereof, M 1 To M 8 are each independently a single bond, -C(=O)-, or a combination thereof, and R 1 and R 2 For hydrogen. 4 . The resist underlayer composition according to claim 1 , wherein in Chemical Formula 1, x1 and x4 are each 1, and x2 and x3 are each 0.

5. The resist underlayer composition according to claim 1, wherein the structural unit represented by Chemical Formula 1 is represented by one or more selected from Chemical Formula 1-1 and Chemical Formula 1-2: Chemical formula 1-1 Chemical formula 1-2 in, In Chemical Formula 1-1 and Chemical Formula 1-2, R 11 , R 12 , R 21 and R 22 are each independently hydrogen, deuterium or a substituted or unsubstituted C1 to C10 alkyl group, R 13 , R 14 , R 23 and R 24 are each independently hydrogen, deuterium, hydroxyl, substituted or unsubstituted C1 to C10 alkyl, substituted or unsubstituted C1 to C10 alkoxy, or a combination thereof, n1 and n2 are each independently one of integers selected from 1 to 10, and * is the connection point. 6 . The resist underlayer composition according to claim 1 , wherein the weight average molecular weight of the polymer is 1,000 g / mol to 300,000 g / mol. 7 . The resist underlayer composition according to claim 1 , wherein the polymer is included in an amount of 0.1 wt % to 50 wt % based on the total weight of the resist underlayer composition.

8. The resist base composition according to claim 1, wherein the resist base composition further comprises one or more additional polymers selected from acrylic resins, epoxy resins, novolac resins, glycoluril resins and melamine resins.

9. The resist underlayer composition according to claim 1, wherein the resist underlayer composition further comprises an additive, wherein the additive comprises a surfactant, a thermal acid generator, a photoacid generator, a plasticizer, or a combination thereof.

10. A method for forming a pattern, comprising: forming a film to be etched on a substrate, The resist base layer composition according to claim 1 is applied onto the film to be etched to form a resist base layer, forming a photoresist pattern on the resist bottom layer, and The resist base layer and the film to be etched are sequentially etched using the photoresist pattern as an etching mask.

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