Power module and manufacturing method

Abstract

The invention relates to the technical field of power electronics, and particularly discloses a power module and a manufacturing method. According to the power module and the manufacturing method provided by the invention, the two first substrates are in insulated connection, current flows to the chip through the circuit patterns on the first substrates, the chip base connected with the chip can be used as a part of structure of a chip electrode, the heat dissipation performance of the power module is improved, and the chip base is arranged in the first groove, so that the heat dissipation performance of the power module is improved. The chip is in conductive connection with the circuit pattern through the first conduction hole, and the connection technology of a metal bonding wire, a copper clamp or a copper bar and the like in the prior art is replaced, so that the integration level of the power module is improved, the current flowing path is shortened, the stray inductance is reduced, and the energy loss of the power module is reduced; in addition, each chip base is connected with one heat dissipation piece, double-face heat dissipation of the power module is achieved, the heat dissipation path is shortened, and the heat dissipation effect is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronics, and in particular to a power module and a manufacturing method thereof. Background Art

[0002] At present, the power modules used in the main drive inverters of new energy vehicles have not yet broken away from the limitations of traditional chip packaging, and there is still a lot of room for improvement in key performance parameters such as stray inductance and heat dissipation capacity. In addition, based on usage, there will be higher requirements for the integration of electric drive assemblies, energy loss, weight and cost in the future.

[0003] As the core component of the inverter, the power module has a direct impact on the vehicle's performance through its circuit topology, parasitic parameters, and heat dissipation capabilities. By optimizing and improving the packaging structure of the power module, the acceleration and endurance of the vehicle can be affected.

[0004] To achieve the above-mentioned objectives, many power module packages replace metal bonding wires with copper clips and copper bars, and adopt processes such as silver sintering and laser welding. The power modules have achieved certain improvements in their working efficiency and heat dissipation performance, but there are still deficiencies in heat dissipation performance, power module integration, energy loss, and reduction of stray inductance. Summary of the invention

[0005] The object of the present invention is to provide a power module and a manufacturing method thereof, which improve the integration and heat dissipation performance of the power module, reduce the energy loss of the power module, and reduce the stray inductance.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] In a first aspect, a power module is provided, comprising:

[0008] There are two first substrates, each of which has a first groove on its first side, and each of which has a circuit pattern on its first side, and the second sides of the two first substrates are arranged facing each other and insulated;

[0009] A chip base is arranged in the first groove, a chip is arranged on the chip base, a plurality of first conductive holes are arranged on the first substrate, and the chip base and the chip are respectively conductively connected to the circuit pattern through the first conductive holes;

[0010] The heat sink is arranged on the first side surface of the first substrate, and the heat sink is insulated from and thermally connected to the chip base.

[0011] As an optional technical solution for the above-mentioned power module, a first insulating layer is respectively provided on the first side surface of each first substrate, a through groove is provided on the first insulating layer, the through groove is arranged corresponding to the chip base, an insulating thermal conductive layer is provided in the through groove, and the heat sink is connected to the insulating thermal conductive layer.

[0012] As an optional technical solution for the above-mentioned power module, a second substrate is pressed onto the first side surface of each of the first substrates, a first insulating layer is provided on the surface of the second substrate, a through groove is provided on the first insulating layer, the through groove is arranged corresponding to the chip base, and the heat sink is connected to the second substrate by passing through the through groove.

[0013] As an optional technical solution of the above-mentioned power module, a second groove is provided on the first side surface of one of the first substrates, a metal block is provided in the second groove, and a second conductive hole for conductively connecting the metal block and the circuit pattern is provided on the first substrate;

[0014] A third conducting hole is provided on the other first substrate, and the third conducting hole is conductively connected to the circuit pattern.

[0015] As an optional technical solution of the above power module, a fourth conducting hole is formed through the two first substrates, and the fourth conducting hole conductively connects the circuit patterns on the two first substrates.

[0016] As an optional technical solution of the above power module, an insulating dielectric layer is provided between the two first substrates.

[0017] In a second aspect, a method for manufacturing a power module is provided, for manufacturing the power module as described in any one of the above items, the manufacturing method comprising:

[0018] Providing a chip base and a chip, and mounting the chip on the chip base;

[0019] Providing two first substrates with first grooves and circuit patterns;

[0020] Installing the chip base in the first groove;

[0021] Processing a first via hole on the first substrate to electrically connect the chip and the circuit pattern;

[0022] Laminating the two first substrates;

[0023] A heat sink is provided and arranged on the first side of the first substrate so that the heat sink is insulated from and thermally connected to the chip base.

[0024] As an optional technical solution for the manufacturing method of the above-mentioned power module, a first insulating layer is coated on the first side of the first substrate, a through groove is opened on the first insulating layer, an insulating thermal conductive layer is coated in the through groove, and the heat sink is connected to the insulating thermal conductive layer.

[0025] As an optional technical solution for the manufacturing method of the above-mentioned power module, two second substrates are provided, and the two second substrates are placed on the first side of the first substrate. The second substrates are pressed onto the first substrate, and a first insulating layer is coated on the surface of the second substrate. A through groove is opened in the first insulating layer, so that the heat sink passes through the through groove and is connected to the second substrate.

[0026] As an optional technical solution of the above-mentioned method for manufacturing the power module, a metal block is provided, a second groove is formed on the first side surface of one of the first substrates, the metal block is installed in the second groove, and a second conductive hole conductively connecting the metal block and the circuit pattern is processed on the first substrate;

[0027] A third via hole is processed on another of the first substrates to electrically connect the third via hole to the circuit pattern.

[0028] Beneficial effects of the present invention:

[0029] The power module and manufacturing method provided by the present invention have two first substrates that are insulated and connected, and current flows to the chip through the circuit pattern on the first substrate. The chip base connected to the chip can be used as a part of the chip electrode structure, thereby improving the integration of the power module. The chip base is arranged in the first groove, and the chip is conductively connected to the circuit pattern through the first conductive hole, replacing the connection process such as metal bonding wires, copper clips or copper bars in the prior art, which not only improves the heat dissipation performance of the power module, but also shortens the path through which the current flows, reduces stray inductance, and reduces the energy loss of the power module. In addition, the second side surfaces of the two first substrates are arranged facing each other, and each chip base in the first substrate is respectively connected to a heat sink, thereby realizing double-sided heat dissipation of the power module, shortening the heat dissipation path, and improving the heat dissipation effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic diagram of a first structure of a power module provided by an embodiment of the present invention;

[0031] Figure 2 is a second structural schematic diagram of a power module provided by an embodiment of the present invention;

[0032] Figure 3 is a schematic structural diagram of a chip base and a chip provided in an embodiment of the present invention;

[0033] Figure 4is a schematic diagram of the structure of a sub-board provided by an embodiment of the present invention;

[0034] Figure 5 It is a schematic diagram of a structure in which a chip base and a metal block are installed in a daughter board provided by an embodiment of the present invention;

[0035] Figure 6 is a schematic structural diagram of a sub-board processed with a first conductive hole and a second conductive hole provided in an embodiment of the present invention;

[0036] Figure 7 is a schematic structural diagram of a sub-board processed with a first conductive hole provided in an embodiment of the present invention;

[0037] Figure 8 is a schematic structural diagram of two first substrates pressed together according to an embodiment of the present invention;

[0038] Fig. 9 is a schematic diagram of a first installation structure of a heat sink provided by an embodiment of the present invention;

[0039] Fig.10 is a schematic diagram of a second installation structure of a heat sink provided by an embodiment of the present invention;

[0040] Fig.11 It is a flow chart of a method for manufacturing a power module provided by an embodiment of the present invention.

[0041] In the figure:

[0042] 1. First substrate; 2. Chip base; 3. Chip; 4. Heat sink; 5. First insulating layer; 6. Insulating thermal conductive layer; 7. Second substrate; 8. Metal block;

[0043] 11. first groove; 12. second groove; 13. first conductive hole; 14. second conductive hole; 15. third conductive hole; 16. fourth conductive hole; 17. daughter board; 171. through groove;

[0044] 51. Through slot;

[0045] 71. fifth conductive hole;

[0046] 100, metal layer; 200, insulating dielectric layer. DETAILED DESCRIPTION

[0047] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0048] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0049] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0050] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0051] Embodiment 1

[0052] like Figure 1 and Figure 2 As shown, this embodiment provides a power module, which includes a first substrate 1, a chip base 2 and a heat sink 4. Two first substrates 1 are provided, and the first side surface of each first substrate 1 is respectively provided with a first groove 11, and each first substrate 1 is respectively provided with a circuit pattern, and the second sides of the two first substrates 1 are arranged facing each other and insulated. The chip base 2 is arranged in the first groove 11, and a chip 3 is arranged on the chip base 2. A plurality of first conductive holes 13 are provided on the first substrate 1, and the chip base 2 and the chip 3 are respectively conductively connected to the circuit pattern through the first conductive holes 13. The heat sink 4 is arranged on the first side surface of the first substrate 1, and the heat sink 4 is insulated from the chip base 2 and thermally connected.

[0053] In the power module provided by the present embodiment, the two first substrates 1 are insulated and connected, and the current flows to the chip 3 through the circuit pattern on the first substrate 1. The chip base 2 connected to the chip 3 can be used as a part of the chip electrode structure, thereby improving the heat dissipation performance of the power module. The chip base 2 is arranged in the first groove 11, and the chip 3 is conductively connected to the circuit pattern through the first conductive hole 13, which replaces the connection process such as metal bonding wires, copper clips or copper bars in the prior art, which not only improves the integration of the power module, but also shortens the path through which the current flows, reduces the stray inductance, and reduces the energy loss of the power module; in addition, the second side surfaces of the two first substrates 1 are arranged facing each other, and each chip base 2 in the first substrate 1 is respectively connected to a heat sink 4, thereby realizing double-sided heat dissipation of the power module, shortening the heat dissipation path, and improving the heat dissipation effect.

[0054] The first substrate 1 includes a plurality of stacked metal layers 100, an insulating dielectric layer 200 is disposed between two adjacent metal layers 100, and a circuit pattern is formed on the metal layer 100. The size of the first groove 11 matches the size of the chip base 2. For example, Figure 4 and Figure 5 As shown, the first substrate 1 includes a sub-board 17, the sub-board 17 has at least two metal layers 100, an insulating dielectric layer 200 is arranged between the two metal layers 100, the metal layers 100 and the insulating dielectric layer 200 are pressed together to form the sub-board 17, a circuit pattern is made on the metal layer 100, and a through groove 171 penetrating the sub-board 17 is opened on the sub-board 17. The chip base 2 with the chip 3 mounted thereon is placed in the through groove 171, the insulating dielectric layer 200 and the metal layer 100 are sequentially overlapped on one side of the sub-board 17, and the sub-board 17, the insulating dielectric layer 200 and the metal layer 100 are pressed together to form a first groove 11, and the insulating dielectric layer 200 is pressed together to connect the sub-board 17, the insulating dielectric layer 200 and the metal layer 100 through a process of melting, flowing, and solidification, and the melted insulating dielectric fills the first groove 11, and the chip base 2 is fixed in the first groove 11.

[0055] The chip 3 is connected to the chip base 2 by metal processes such as welding, sintering or diffusion welding. Optionally, the chip 3 faces the bottom of the first groove 11, and preferably, the chip 3 contacts the insulating dielectric layer 200. Figure 6 As shown, a circuit pattern is etched on the metal layer 100, and a first via hole 13 is processed on the insulating dielectric layer 200 in contact with the chip 3 by laser, electroplating and other processes. The first via hole 13 is a metal via hole.

[0056] like Figure 8As shown, the second sides of the two first substrates 1 are arranged facing each other and insulated and connected. In some embodiments, an insulating dielectric layer 200 is arranged between the two first substrates 1. The insulating dielectric layer 200 is melted, flowed, and solidified to connect the two first substrates 1. After the two first substrates 1 are pressed together, the circuit topology structure is formed by the internal etching circuit and the first via 13.

[0057] In some embodiments, Figure 1 As shown, the first side of each first substrate 1 is provided with a first insulating layer 5, and a through groove 51 is provided on the first insulating layer 5. The through groove 51 is arranged corresponding to the chip base 2, and an insulating thermal conductive layer 6 is provided in the through groove 51. The heat sink 4 is connected to the insulating thermal conductive layer 6, thereby realizing an insulating thermal conductive connection between the heat sink 4 and the chip base 2, shortening the heat dissipation path, improving the heat dissipation effect, and the power module dissipates heat on both sides, further improving the heat dissipation efficiency. The first insulating layer 5 plays a protective role. The material of the insulating thermal conductive layer 6 is an insulating thermal conductive material, which is not specifically limited here.

[0058] Before coating the first insulating layer 5 on the first side of the first substrate 1, a fourth via hole 16 is processed on the two first substrates 1, the fourth via hole 16 passes through the two first substrates 1, and the fourth via hole 16 conductively connects the circuit patterns on the two first substrates 1. The fourth via hole 16 is a metal via hole. After processing the fourth via hole 16, the first insulating layer 5 is coated on the first side of the first substrate 1.

[0059] In another embodiment, if Figure 2 As shown, the first side surface of each first substrate 1 is respectively pressed with a second substrate 7, the surface of the second substrate 7 is provided with a first insulating layer 5, the first insulating layer 5 is provided with a through groove 51, the through groove 51 is arranged corresponding to the chip base 2, and the heat sink 4 penetrates the through groove 51 and is connected to the second substrate 7. The chip base 2 and the heat sink 4 are arranged correspondingly, which shortens the heat dissipation path and improves the heat dissipation effect. The power module dissipates heat on both sides, further improving the heat dissipation efficiency. The first insulating layer 5 plays a protective role.

[0060] The second substrate 7 includes an insulating dielectric layer 200 and a metal layer 100. The insulating dielectric layer 200 is disposed between the metal layer 100 and the first side surface of the first substrate 1. The metal layer 100, the insulating dielectric layer 200 and the first substrate 1 are pressed together. A circuit pattern can be processed on the metal layer 100 of the second substrate 7. Then, a fourth conductive hole 16 is processed on the first substrate 1. The fourth conductive hole 16 conductively connects the two second substrates 7 and the two first substrates 1. Finally, the first insulating layer 5 is coated on the surface of the second substrate 7.

[0061] A second groove 12 is provided on the first side surface of one of the first substrates 1, a metal block 8 is provided in the second groove 12, and a second via 14 for conductively connecting the metal block 8 and the circuit pattern is provided on the first substrate 1. The second via 14 is a metal via. The metal block 8 can be used as a circuit lead-out port to lead out the circuit of the circuit pattern inside the first substrate 1. A third via 15 is provided on the other first substrate 1, and the third via 15 is a metal via. The third via 15 is conductively connected to the circuit pattern, and the third via 15 is used as a circuit lead-out port to lead out the circuit pattern inside the first substrate 1.

[0062] like Figure 1 As shown, in the first method of fixing the heat sink 4, the metal block 8 is exposed to the outside and directly serves as a circuit lead-out port. Figure 2 As shown, in the above-mentioned second method of fixing the heat sink 4, the metal block 8 is covered by the second substrate 7, the metal block 8 is conductively connected to the metal layer 100 of the second substrate 7 through the fifth conductive hole 71, and the surface of the second substrate 7 at the position corresponding to the metal block 8 is not coated with the first insulating layer 5, and the position of the second substrate 7 not coated with the first insulating layer 5 serves as a circuit lead-out port.

[0063] Embodiment 2

[0064] Reference Figure 1 , Figure 2 and Fig.11 As shown, this embodiment provides a method for manufacturing a power module, which is used to manufacture the power module provided in the first embodiment.

[0065] The manufacturing method of the power module mainly includes:

[0066] Providing a chip base 2 and a chip 3, and mounting the chip 3 on the chip base 2;

[0067] Providing two first substrates 1 with first grooves 11 and circuit patterns;

[0068] Install the chip base 2 in the first groove 11;

[0069] Processing a first via hole 13 on the first substrate 1 to electrically connect the chip 3 and the circuit pattern;

[0070] Laminating two first substrates 1;

[0071] A heat sink 4 is provided and disposed on the first side of the first substrate 1 , so that the heat sink 4 is insulated from the chip base 2 and thermally connected.

[0072] The two first substrates 1 are insulated and connected, and the current flows to the chip 3 through the circuit pattern on the first substrate 1. The chip base 2 connected to the chip 3 can be used as a part of the chip electrode structure, which improves the integration of the power module. The chip base 2 is arranged in the first groove 11, and the chip is conductively connected to the circuit pattern through the first conductive hole 13, which replaces the metal bonding wire, copper clip or copper busbar connection process in the prior art, which not only improves the integration of the power module, but also shortens the path of the current flow, reduces the stray inductance, and reduces the energy loss of the power module; in addition, each chip base 2 is connected to a heat sink 4, which realizes double-sided heat dissipation of the power module, shortens the heat dissipation path, and improves the heat dissipation effect.

[0073] The method for manufacturing a power module comprises the following steps:

[0074] Step 1: Figure 3 As shown, a chip base 2 and a chip 3 are provided, and the chip 3 is mounted on the chip base 2 .

[0075] Specifically, the chip 3 can be connected to the chip base 2 by metal processes such as welding, sintering, and diffusion welding.

[0076] Step 2: Figure 4 and Figure 5 As shown, a first substrate 1 having a first groove 11 and a circuit pattern is provided, and another first substrate 1 having a first groove 11, a second groove 12 and a circuit pattern is provided.

[0077] Specifically, the two first substrates 1 each include a plurality of stacked metal layers 100, an insulating dielectric layer 200 is disposed between two adjacent metal layers 100, and the metal layers 100 and the insulating dielectric layer 200 are laminated to form the first substrate 1. A circuit pattern is made on the metal layer 100 by etching and electroplating, and the insulating dielectric layer 200 may be a prepreg.

[0078] The first substrate 1 in this embodiment includes a sub-board 17, one or more through grooves 171 are processed on the sub-board 17, an insulating dielectric layer 200 and a metal layer 100 are stacked on one side of the sub-board 17, the through groove 171 and the insulating dielectric layer 200 are enclosed to form a first groove 11 and / or a second groove 12, and the sub-board 17, the insulating dielectric layer 200 and the metal layer 100 are pressed together to form the first substrate 1. The insulating dielectric layer 200 is pressed and connected to the sub-board 17, the insulating dielectric layer 200 and the metal layer 100 through a process of melting, flowing and solidification.

[0079] The second groove 12 and the first groove 11 are arranged on the first side surface of the first substrate 1 .

[0080] Step 3: Figure 5As shown, the chip base 2 is installed in the first groove 11 , a metal block 8 is provided, and the metal block 8 is installed in the second groove 12 .

[0081] Specifically, a chip base 2 is installed in each first groove 11, and the chip 3 is preferably arranged in contact with the insulating dielectric layer 200 at the bottom of the first groove 11. In step 2, the chip base 2 and the metal block 8 are placed in the corresponding through grooves 171, and the insulating dielectric layer 200 and the metal layer 100 are stacked on one side of the sub-board 17. After the insulating dielectric layer 200 is melted, flowed, and solidified, not only the sub-board 17, the insulating dielectric layer 200 and the metal layer 100 are pressed and connected, but also the melted insulating dielectric fills the first groove 11 and / or the second groove 12. After the insulating dielectric in the first groove 11 is solidified, the chip base 2 is fixed in the first groove 11, and after the insulating dielectric in the second groove 12 is solidified, the metal block 8 is fixed in the second groove 12.

[0082] Step 4: Figure 6 and Figure 7 As shown, first via holes 13 for conductively connecting the chip 3 and the circuit pattern are processed on both first substrates 1 , and second via holes 14 for conductively connecting the metal block 8 and the circuit pattern are processed on the other first substrate 1 .

[0083] Specifically, a via hole connecting two adjacent metal layers 100 is processed on the insulating dielectric layer 200 through laser, electroplating and other processes, and a circuit pattern is etched on the outermost metal layer 100. In this embodiment, for the first substrate 1 with the chip base 2 mounted thereon, a first via hole 13 conductively connecting the chip 3 and the circuit pattern is processed on the first substrate 1, and for the first substrate 1 with the metal block 8 mounted thereon, a second via hole 14 conductively connecting the metal block 8 and the circuit pattern is processed on the first substrate 1. Specifically, the first via hole 13 connects the chip 3 and the circuit pattern on the metal layer 100 adjacent to the chip 3, and the second via hole 14 connects the metal block 8 and the circuit pattern on the metal layer 100 adjacent to the metal block 8.

[0084] Step 5: Figure 8 and Fig. 9 As shown, two first substrates 1 are pressed together.

[0085] Specifically, an insulating dielectric layer 200 is disposed between the two first substrates 1, and the two first substrates 1 are pressed together. The insulating dielectric layer 200 undergoes a process of melting, flowing, and solidifying to press and connect the two first substrates 1 to form a motherboard. The two first substrates 1 are then connected by internally etching circuit patterns and processing fourth vias 16.

[0086] Specifically, the two first substrates 1 are provided with fourth vias 16, and the fourth vias 16 are conductively connected to the circuit patterns on the two first substrates 1. The fourth vias 16 are processed by drilling, electroplating, filling and other processes to form a complete circuit topology. The hole wall of the fourth via 16 is conductively connected to the metal layer 100 of the first substrate 1 by copper plating, and the fourth via 16 is filled with an insulating material.

[0087] Step 6: Fig. 9 and Fig.10 As shown, a third via hole 15 is processed on another first substrate 1, and the third via hole 15 is conductively connected to the circuit pattern.

[0088] Specifically, the third via hole 15 and the metal block 8 are both used as circuit lead-out ports to lead out the circuit pattern inside the first substrate 1. The metal block 8 can also replace the third via hole 15, and the installation method of the metal block 8 is the same as that of step three and step four. Of course, the method of setting the third via hole 15 can also replace the metal block 8 in step three and step four.

[0089] The third via 15 is processed by drilling, electroplating, filling and other processes to form a complete circuit topology. The hole wall of the third via 15 is conductively connected to the metal layer 100 of the first substrate 1 by copper plating, and the third via 15 is filled with insulating material.

[0090] Step 7: Figure 1 and Fig. 9 As shown, a heat sink 4 is provided and disposed on the first side of the first substrate 1 , so that the heat sink 4 is insulated from the chip base 2 and thermally connected.

[0091] Specifically, a first insulating layer 5 is coated on the first side of the first substrate 1, a through groove 51 is formed on the first insulating layer 5, and an insulating thermal conductive layer 6 is coated in the through groove 51, so that the heat sink 4 is connected to the insulating thermal conductive layer 6. The insulating thermal conductive layer 6 can conduct the heat on the chip base 2 to the heat sink 4, thereby improving the heat dissipation efficiency.

[0092] Embodiment 3

[0093] This embodiment provides a method for manufacturing a power module, which is used to manufacture the power module provided in Embodiment 1. The difference between this embodiment and Embodiment 2 is the installation method of the heat sink in Step 7. Figure 2 and Fig.10As shown, in this embodiment, a heat sink 4 is provided, and the heat sink 4 is arranged on the first side of the first substrate 1, so that the heat sink 4 is insulated and thermally connected to the chip base 2. Specifically, two second substrates 7 are provided, and the two second substrates 7 are placed on the first side of the first substrate 1. The second substrates 7 are pressed on the first substrate 1, and a first insulating layer 5 is coated on the surface of the second substrate 7. A through groove 51 is opened on the first insulating layer 5, so that the heat sink 4 passes through the through groove 51 and is connected to the second substrate 7. The difference between this embodiment and the second embodiment is that the second substrate 7 is provided to achieve an insulated connection with the chip base 2,

[0094] The second substrate 7 includes an insulating dielectric layer 200 and a metal layer 100. The insulating dielectric layer 200 is disposed between the metal layer 100 and the first side surface of the first substrate 1. The metal layer 100, the insulating dielectric layer 200 and the first substrate 1 are pressed together. A circuit pattern can be processed on the metal layer 100 of the second substrate 7. Then, a fourth conductive hole 16 is processed on the first substrate 1. The fourth conductive hole 16 conductively connects the two second substrates 7 and the two first substrates 1. Finally, the first insulating layer 5 is coated on the surface of the second substrate 7. The metal block 8 is conductively connected to the metal layer 100 of the second substrate 7 through the fifth conductive hole 71, and the surface of the second substrate 7 at the position corresponding to the metal block 8 is not coated with the first insulating layer 5. The position where the second substrate 7 is not coated with the first insulating layer 5 serves as a circuit lead-out port.

[0095] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A power module, characterized in that: include: Two first substrates (1) are provided, each first substrate (1) is provided with a first groove (11) on its first side, each first substrate (1) is provided with a circuit pattern, and the second sides of the two first substrates (1) are arranged facing each other and insulated from each other; A chip base (2) is arranged in the first groove (11); a chip (3) is arranged on the chip base (2); the first substrate (1) is provided with a plurality of first conductive holes (13); the chip base (2) and the chip (3) are respectively conductively connected to the circuit pattern through the first conductive holes (13); A heat sink (4) is arranged on the first side surface of the first substrate (1); the heat sink (4) is insulated from and thermally connected to the chip base (2).

2. The power module according to claim 1, characterized in that: A first insulating layer (5) is provided on the first side surface of each first substrate (1), a through groove (51) is provided on the first insulating layer (5), the through groove (51) is arranged corresponding to the chip base (2), an insulating heat-conducting layer (6) is provided in the through groove (51), and the heat sink (4) is connected to the insulating heat-conducting layer (6).

3. The power module according to claim 1, characterized in that: A second substrate (7) is pressed onto the first side surface of each of the first substrates (1), a first insulating layer (5) is provided on the surface of the second substrate (7), a through groove (51) is provided on the first insulating layer (5), the through groove (51) is arranged corresponding to the chip base (2), and the heat sink (4) passes through the through groove (51) and is connected to the second substrate (7).

4. The power module according to claim 1, characterized in that: A second groove (12) is provided on a first side surface of one of the first substrates (1), a metal block (8) is provided in the second groove (12), and a second conducting hole (14) for conductively connecting the metal block (8) and the circuit pattern is provided on the first substrate (1); A third conducting hole (15) is provided on the other first substrate (1), and the third conducting hole (15) is conductively connected to the circuit pattern.

5. The power module according to claim 1, characterized in that: A fourth conducting hole (16) is provided through the two first substrates (1), and the fourth conducting hole (16) is electrically connected to the circuit patterns on the two first substrates (1).

6. The power module according to claim 1, characterized in that: An insulating dielectric layer (200) is provided between the two first substrates (1).

7. A method for manufacturing a power module, used for manufacturing the power module according to any one of claims 1 to 6, characterized in that: The manufacturing method comprises: Providing a chip base (2) and a chip (3), and mounting the chip (3) on the chip base (2); Providing two first substrates (1) each having a first groove (11) and a circuit pattern; Installing the chip base (2) in the first groove (11); Processing a first via hole (13) on the first substrate (1) for conductively connecting the chip (3) and the circuit pattern; Laminating the two first substrates (1); A heat sink (4) is provided and arranged on the first side of the first substrate (1) so that the heat sink (4) and the chip base (2) are insulated and thermally connected.

8. The method for manufacturing a power module according to claim 7, characterized in that: A first insulating layer (5) is coated on the first side of the first substrate (1), a through groove (51) is provided on the first insulating layer (5), an insulating heat-conducting layer (6) is coated in the through groove (51), and the heat sink (4) is connected to the insulating heat-conducting layer (6).

9. The method for manufacturing a power module according to claim 7, characterized in that: Two second substrates (7) are provided, the two second substrates (7) are placed on the first side of the first substrate (1), the second substrates (7) are pressed onto the first substrate (1), a first insulating layer (5) is coated on the surface of the second substrate (7), a through groove (51) is opened on the first insulating layer (5), and the heat sink (4) passes through the through groove (51) to be connected to the second substrate (7).

10. The method for manufacturing a power module according to claim 7, characterized in that: Providing a metal block (8), opening a second groove (12) on a first side surface of one of the first substrates (1), installing the metal block (8) in the second groove (12), and processing a second conductive hole (14) on the first substrate (1) for conductively connecting the metal block (8) and the circuit pattern; A third conducting hole (15) is processed on another of the first substrates (1), so that the third conducting hole (15) is conductively connected to the circuit pattern.

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