Gas buffer tank for thin film deposition process and processing device for semiconductor device

Abstract

The invention provides a gas buffer tank for a thin film deposition process and a processing device for a semiconductor device. The gas buffer tank for the thin film deposition process is positioned between a gas source and a process chamber, and is characterized in that the gas buffer tank comprises a tank body which comprises a gas inlet and a gas outlet and is used for pre-storing mixed gas with target gas pressure so as to provide the mixed gas for the process chamber in a quantitative and constant-pressure manner; and the buffer assembly is arranged in the tank body, is positioned between the gas inlet and the gas outlet, and is used for radially and / or circumferentially changing a transmission path of various input gases flowing in from the gas inlet in the tank body so as to obtain mixed gas required by the thin film deposition process at the outlet end.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition, and in particular to a gas buffer tank for a thin film deposition process, and a processing device for a semiconductor device. Background Art

[0002] In the gas transmission system of the thin film deposition equipment, a mixed gas of the reaction gas and the dilution gas needs to be introduced into the reaction chamber at the same time to perform thin film deposition. However, due to the lack of a mixing structure for the reaction gas and the dilution gas in the prior art, the concentration of the reaction gas is uneven, which affects the uniformity of the film thickness distribution in high-precision thin film deposition processes such as atomic layer deposition.

[0003] In the prior art, a gas mixing structure is added to the gas transmission pipeline to improve the mixing structure of the reaction gas and the dilution gas. However, these gas mixing structures set in the gas transmission pipeline may affect the real-time supply of the reaction gas due to excessive gas flow resistance, or cause uneven mixing due to too small gas flow resistance and too fast gas flow, and thus cannot meet the requirements of high-precision thin film deposition processes such as atomic layer deposition on the real-time gas supply and uniformity of film thickness.

[0004] In order to overcome the above-mentioned defects of the prior art, a gas buffer tank technology is urgently needed in the art. The technology can utilize the time of pre-storing the reaction gas in the gas buffer tank to fully mix the reaction gas and the dilution gas, and then directly provide the fully mixed gas to the process chamber through the gas outlet, thereby ensuring real-time gas supply during the entire process while improving the uniformity of the film thickness. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the art is in urgent need of a gas buffer tank for a thin film deposition process, and a processing device for a semiconductor device, which can utilize the time for pre-storing the reaction gas in the gas buffer tank to fully mix the reaction gas and the dilution gas, and then directly provide the fully mixed gas to the process chamber through the gas outlet, thereby ensuring real-time gas supply during the entire process while improving the uniformity of the film thickness.

[0007] Specifically, the gas buffer tank for the thin film deposition process provided according to the first aspect of the present invention is located between the gas source and the process chamber. The gas buffer tank includes: a tank body, including an air inlet and an air outlet, for pre-storing a mixed gas at a target pressure to provide the mixed gas to the process chamber quantitatively and at a constant pressure; and a buffer component, arranged inside the tank body and located between the air inlet and the air outlet, for radially and / or circumferentially changing the transmission path of the multiple input gases flowing in from the air inlet inside the tank body, so as to obtain the mixed gas required for the thin film deposition process at the outlet end.

[0008] Furthermore, in some embodiments of the present invention, the buffer assembly includes a plurality of buffer elements, wherein a preset first distance is maintained between each of the buffer elements.

[0009] Furthermore, in some embodiments of the present invention, the buffer element includes a spiral blade for circumferentially changing a transmission path of the multiple input gases flowing in from the gas inlet within the tank body.

[0010] Furthermore, in some embodiments of the present invention, the rotation directions of adjacent spiral blades are opposite to each other.

[0011] Furthermore, in some embodiments of the present invention, the buffer element includes a waist-shaped tube for radially changing the transmission paths of the various input gases flowing in from the gas inlet within the tank body.

[0012] Furthermore, in some embodiments of the present invention, the air inlet end and the air outlet end of the buffer component respectively contact the air inlet and the air outlet of the gas buffer tank, or the air inlet end of the buffer component maintains a preset second distance from the air inlet of the gas buffer tank, or the air outlet end of the buffer component maintains a preset third distance from the air outlet of the gas buffer tank.

[0013] Furthermore, in some embodiments of the present invention, the gas buffer tank also includes: a sealed shut-off valve, provided at the air inlet and / or air outlet of the tank body, for sealing the tank body; and a valve switch, for opening or closing the sealed shut-off valve.

[0014] Furthermore, in some embodiments of the present invention, the gas buffer tank also includes: a pressure gauge for detecting the gas pressure of the mixed gas in the tank body; a response valve, arranged in the gas pipeline between the gas buffer tank and the process chamber; and a controller, which is configured to: obtain the gas pressure of the mixed gas in the tank body via the pressure gauge; and in response to the pressure reaching a preset threshold, open the response valve to introduce the mixed gas into the reaction chamber quantitatively and at a constant pressure.

[0015] In addition, the processing apparatus of the semiconductor device provided according to the second aspect of the present invention includes: a process chamber for performing a processing process on the semiconductor device; a gas source for providing at least one mixed gas required for the processing process; and a gas buffer tank for the thin film deposition process provided in the first aspect, located between the gas source and the process chamber, so as to provide the mixed gas to the process chamber in a quantitative and constant pressure manner.

[0016] Furthermore, in some embodiments of the present invention, the processing device includes a plurality of the gas sources and a corresponding number of the gas buffer tanks, wherein the first gas source includes a precursor liquid storage tank, a carrier gas source and a first dilution gas source, the carrier gas source introduces a carrier gas into the precursor liquid storage tank to form an aerosol carrying the precursor, the first dilution gas provided by the first dilution gas source is introduced into the air inlet of the first gas buffer tank together with the aerosol, and then is introduced into the reaction chamber quantitatively and at a constant pressure through the air outlet of the first gas buffer tank, and the second gas source includes a reaction gas source and a second dilution gas source, the second dilution gas provided by the second dilution gas source is introduced into the air inlet of the second gas buffer tank together with the reaction gas, and then is introduced into the reaction chamber quantitatively and at a constant pressure through the air outlet of the second gas buffer tank. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A semiconductor device processing apparatus according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic structural diagram of a gas buffer tank provided according to some embodiments of the present invention is shown.

[0020] Figure 3A to Figure 3B A schematic diagram of the Venturi tube structure of a buffer element provided according to some embodiments of the present invention is shown.

[0021] Figure 4 A schematic diagram of the non-contact structure of a spiral blade provided according to some embodiments of the present invention is shown.

[0022] 10 Process Chamber

[0023] 20 Gas buffer tank

[0024] 21 Tank

[0025] 22 Buffer components

[0026] 30 Input pipeline

[0027] 31 Output Pipeline

[0028] 40 Precursor tank

[0029] 401 Carrier gas source

[0030] 41, 42 Dilution gas source

[0031] 43 Reaction gas source

[0032] 50 Response valve

[0033] 60 Pressure gauge DETAILED DESCRIPTION

[0034] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0035] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0037] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0038] As mentioned above, in the gas transmission system of the thin film deposition equipment, it is necessary to simultaneously pass the mixed gas of the reaction gas and the dilution gas into the reaction chamber for thin film deposition. However, due to the lack of a mixing structure for the reaction gas and the dilution gas in the prior art, the concentration of the reaction gas is uneven, thereby affecting the uniformity of the film thickness distribution in high-precision thin film deposition processes such as atomic layer deposition.

[0039] In the prior art, a gas mixing structure is added to the gas transmission pipeline to improve the mixing structure of the reaction gas and the dilution gas. However, these gas mixing structures set in the gas transmission pipeline may affect the real-time supply of the reaction gas due to excessive gas flow resistance, or cause uneven mixing due to too small gas flow resistance and too fast gas flow, and thus cannot meet the requirements of high-precision thin film deposition processes such as atomic layer deposition on the real-time gas supply and uniformity of film thickness.

[0040] Furthermore, existing thin film deposition equipment is usually equipped with a gas buffer tank. The gas buffer tank is a closed container used to store a certain amount of process gas and maintain the stability of gas supply under a certain pressure. When the gas enters the buffer tank, it will store or release the process gas according to the pressure in the tank or the preset duty cycle.

[0041] In order to overcome the above-mentioned defects of the prior art, the present invention provides a gas buffer tank for a thin film deposition process, and a processing device for a semiconductor device, which can utilize the time for pre-storing the reaction gas in the gas buffer tank to fully mix the reaction gas and the dilution gas, and then directly provide the fully mixed gas to the process chamber through the gas outlet, thereby ensuring real-time gas supply during the entire process while improving the uniformity of the film thickness.

[0042] In some non-limiting embodiments, the gas buffer tank of the thin film deposition process provided by the first aspect of the present invention may be configured in the processing device of the semiconductor device provided by the second aspect of the present invention.

[0043] Please refer to Figure 1 , Figure 1 A semiconductor device processing apparatus according to some embodiments of the present invention is shown.

[0044] like Figure 1The semiconductor device processing device includes a process chamber 10, a gas source and a gas buffer tank 20. The process chamber 10 is used to perform a process on the semiconductor device. The gas source is used to provide at least one mixed gas required for the process. The gas buffer tank 20 is located between the gas source and the process chamber 10 to provide the mixed gas to the process chamber 10 in a quantitative and constant pressure manner.

[0045] Furthermore, the semiconductor device processing device may also include an input pipeline 30, an output pipeline 31 and a spray plate.

[0046] The input pipe 30 is provided between the gas source and the buffer tank, and is used to introduce the process gas in the gas source into the buffer tank. Here, a mass flow controller (MFC) can be provided on the input pipe 30 to control the flow rate of the input gas. The output pipe 31 is provided between the buffer tank and the process chamber 10, and is used to introduce the process gas in the buffer tank into the process chamber 10. The spray plate is provided between the output pipe 31 and the process chamber 10, and is used to spray the process gas output from the output pipe 31 onto the surface of the wafer in the process chamber 10.

[0047] In some embodiments, the semiconductor device processing apparatus further includes a plurality of gas sources and a corresponding number of gas buffer tanks 20 .

[0048] Here, the first gas source includes a precursor liquid storage tank 40, a carrier gas source 401 and a first dilution gas source 41. The precursor liquid storage tank 40 can store a TiCl4 precursor, the carrier gas source 401 can be an Ar carrier gas source 401, and the first dilution gas source 41 can be an Ar dilution gas source. The carrier gas source 401 introduces a carrier gas into the precursor liquid storage tank 40 to form an aerosol carrying the precursor, and the first dilution gas provided by the first dilution gas source 41 is introduced into the air inlet of the first gas buffer tank 20 together with the aerosol, and then introduced into the reaction chamber quantitatively and at a constant pressure through the air outlet of the first gas buffer tank 20.

[0049] The second gas source includes a reaction gas source 43 and a second dilution gas source 42. The reaction gas source 43 may be NH3, and the second dilution gas source 42 may be an Ar dilution gas source.

[0050] The second dilution gas provided by the second dilution gas source 42 is introduced into the gas inlet of the second gas buffer tank 20 together with the reaction gas, and then introduced into the reaction chamber at a constant pressure and in a quantitative manner through the gas outlet of the second gas buffer tank 20 .

[0051] Please refer to Figure 2 , Figure 2 A schematic structural diagram of a gas buffer tank provided according to some embodiments of the present invention is shown.

[0052] like Figure 2As shown, the gas buffer tank 20 of the thin film deposition process is located between the gas source and the process chamber 10. The gas buffer tank 20 includes a tank body 21 and a buffer assembly 22.

[0053] The tank body 21 includes an air inlet and an air outlet, and is used to store a mixed gas at a target pressure in advance, so as to provide the mixed gas to the process chamber 10 at a quantitative and constant pressure. The buffer assembly 22 is arranged inside the tank body 21 and is located between the air inlet and the air outlet, and is used to radially and / or circumferentially change the transmission path of the multiple input gases flowing from the air inlet in the tank body 21, so as to obtain the mixed gas required for the thin film deposition process at the outlet.

[0054] In some embodiments, the buffer assembly 22 includes a plurality of buffer elements, and the buffer elements include spiral blades (for example, 2 or 3), which are used to circumferentially change the transmission paths of the multiple input gases flowing in from the air inlet inside the tank body 21. Here, the rotation directions of the adjacent spiral blades are opposite to each other. Here, the rotation directions of the spiral blades are arranged in a positive and negative cross arrangement, so as to change the flow direction of the mixed gas in a positive and negative manner, thereby further enhancing the gas mixing ability of the spiral blades.

[0055] Please refer to Figure 3A to Figure 3B , Figure 3A to Figure 3B A schematic diagram of the Venturi tube structure of a buffer element provided according to some embodiments of the present invention is shown.

[0056] like Figure 3A to Figure 3B As shown, the buffer element includes a waist-shaped tube, which is used to radially change the transmission path of multiple input gases flowing in from the air inlet inside the tank body 21. Multiple waist-shaped tubes are combined into a venturi tube structure, and the cross-section of the waist-shaped tube can be square and / or circular.

[0057] Those skilled in the art will appreciate that the buffer elements of the spiral blades and waist-shaped tubes may be disposed in the buffer tank individually, alternately, or in other preset configurations, so as to mix the gas in the buffer tank.

[0058] Furthermore, in an embodiment of one section of spiral blades and one section of waist-shaped tube, the airflow is disturbed alternately in the circumferential direction and radial direction, thereby achieving a better air homogenization effect.

[0059] Please refer to Figure 4 , Figure 4 A schematic diagram of the non-contact structure of a spiral blade provided according to some embodiments of the present invention is shown.

[0060] like Figure 4 As shown, the buffer assembly 22 includes a plurality of buffer elements, wherein a preset first distance is maintained between each buffer element.

[0061] In some embodiments, the gas inlet end and the gas outlet end of the buffer assembly 22 contact the gas inlet and the gas outlet of the gas buffer tank 20 respectively.

[0062] Optionally, the air inlet end of the buffer assembly 22 maintains a preset second distance from the air inlet of the gas buffer tank 20 .

[0063] Optionally, the gas outlet end of the buffer assembly 22 maintains a preset third distance from the gas outlet of the gas buffer tank 20 .

[0064] In addition, the gas buffer tank 20 of the thin film deposition process can be composed of multiple buffer tanks connected in series. The gas buffer tank 20 also includes a sealed shutoff valve and a valve switch. The sealed shutoff valve is provided at the gas inlet and / or gas outlet of the tank body 21, and is used to seal the tank body 21. The valve switch is provided to open or close the sealed shutoff valve to close or connect adjacent buffer tanks.

[0065] In addition, the gas buffer tank 20 further includes a pressure gauge 60 and a response valve 50. The pressure gauge 60 is used to detect the gas pressure of the mixed gas in the tank body 21. The response valve 50 is provided in the gas pipeline between the gas buffer tank 20 and the process chamber 10, and obtains the gas pressure of the mixed gas in the tank body 21 through the pressure gauge 60. In response to the pressure reaching a preset threshold, the response valve 50 is opened to introduce the mixed gas into the reaction chamber quantitatively and at a constant pressure.

[0066] In summary, in order to overcome the above-mentioned defects of the prior art, the present invention provides a gas buffer tank for a thin film deposition process, and a processing device for a semiconductor device, which can utilize the time for pre-storing the reaction gas in the gas buffer tank to fully mix the reaction gas and the dilution gas, and then directly provide the fully mixed gas to the process chamber through the gas outlet, thereby ensuring real-time gas supply during the entire process while improving the uniformity of the film thickness.

[0067] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0068] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas buffer tank for a thin film deposition process, located between a gas source and a process chamber, characterized in that: The gas buffer tank comprises: a tank body, including a gas inlet and a gas outlet, for pre-storing a mixed gas at a target pressure, so as to provide the mixed gas to the process chamber in a quantitative and constant pressure manner; and A buffer assembly is arranged inside the tank body and located between the air inlet and the air outlet, and is used to radially and / or circumferentially change the transmission paths of the multiple input gases flowing in from the air inlet inside the tank body to obtain the mixed gas required for the thin film deposition process at the outlet end.

2. The gas buffer tank according to claim 1, characterized in that: The buffer assembly includes a plurality of buffer elements, wherein a preset first distance is maintained between the buffer elements.

3. The gas buffer tank according to claim 2, characterized in that: The buffer element includes a spiral blade for circumferentially changing a transmission path of a plurality of input gases flowing from the gas inlet within the tank body.

4. The gas buffer tank according to claim 3, characterized in that: The rotation directions of the adjacent spiral blades are opposite to each other.

5. The gas buffer tank according to claim 2, characterized in that: The buffer element includes a waist-shaped tube for radially changing a transmission path of the various input gases flowing in from the gas inlet within the tank body.

6. The gas buffer tank according to claim 1, characterized in that: The gas inlet end and the gas outlet end of the buffer assembly are in contact with the gas inlet and the gas outlet of the gas buffer tank respectively, or The air inlet end of the buffer assembly maintains a preset second distance from the air inlet of the gas buffer tank, or The gas outlet end of the buffer assembly maintains a preset third distance from the gas outlet of the gas buffer tank.

7. The gas buffer tank according to claim 1, characterized in that: Also includes: A sealing shut-off valve, provided at the air inlet and / or air outlet of the tank body, for sealing the tank body; as well as A valve switch is used to open or close the sealed shut-off valve.

8. The gas buffer tank according to claim 7, characterized in that: Also includes: A pressure gauge, used to detect the pressure of the mixed gas in the tank; a response valve, disposed in a gas pipeline between the gas buffer tank and the process chamber; as well as A controller configured to: obtain the gas pressure of the mixed gas in the tank via the pressure gauge; And in response to the pressure reaching a preset threshold, the response valve is opened to introduce the mixed gas into the reaction chamber quantitatively and at a constant pressure.

9. A semiconductor device processing device, characterized in that: include: A process chamber, used for performing a processing process on the semiconductor device; A gas source, used to provide at least one mixed gas required for the processing technology; as well as The gas buffer tank as described in claims 1 to 8 is located between the gas source and the process chamber to provide the mixed gas to the process chamber in a quantitative and constant pressure manner.

10. The processing device according to claim 9, characterized in that: The processing device comprises a plurality of the gas sources and a corresponding number of the gas buffer tanks, wherein: The first gas source includes a precursor liquid storage tank, a carrier gas source and a first dilution gas source. The carrier gas source introduces a carrier gas into the precursor liquid storage tank to form an aerosol carrying the precursor. The first dilution gas provided by the first dilution gas source is introduced into the gas inlet of the first gas buffer tank together with the aerosol, and then passes through the The gas outlet of the first gas buffer tank is fed into the reaction chamber in a quantitative and constant pressure manner. The second gas source includes a reaction gas source and a second dilution gas source. The second dilution gas provided by the second dilution gas source is introduced into the gas inlet of the second gas buffer tank together with the reaction gas, and then introduced into the reaction chamber quantitatively and at a constant pressure through the gas outlet of the second gas buffer tank.

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