Remote plasma processing equipment

Abstract

The invention belongs to the field of plasma processing equipment, and discloses remote plasma processing equipment which comprises a remote plasma source, a reaction cavity and an objective table, the lower portion of the reaction cavity is filled with an electrolyte solution, the lower portion of the objective table is soaked in the electrolyte solution, an anode metal piece is arranged in the reaction cavity, and the anode metal piece is arranged in the objective table. The activity of the anode metal piece is higher than that of the material of the inner wall of the reaction cavity and that of the material of the objective table, and the anode metal piece 6 partially extends into the electrolyte solution 4; the lower part of the reaction cavity is filled with the electrolyte solution, and the anode metal piece with higher activity is arranged, so that oxygen ions can be effectively absorbed and consumed, the oxidation reaction of the reaction cavity and the objective table is inhibited, and the service lives of the reaction cavity and the objective table are prolonged.

Description

Technical Field

[0001] The present application relates to the field of plasma processing equipment, and in particular, to a remote plasma processing equipment. Background Art

[0002] Some existing remote plasma processing equipment uses a remote plasma source to ionize the working gas to form plasma, and then transports the plasma to the reaction chamber to perform processing such as etching, surface cleaning or thin film deposition on the workpiece. This processing method has been widely used in industrial production, but there are still some problems that need to be solved.

[0003] First, during the operation of remote plasma processing equipment, the temperature in the reaction chamber usually reaches a high temperature of more than 600 degrees. In this high temperature environment, the air that may remain in the reaction chamber will be affected. Specifically, the oxygen in the residual air is easily ionized to form oxygen ions under the high temperature and plasma excitation. The presence of these oxygen ions poses a serious threat to the normal operation and life of the equipment.

[0004] Secondly, oxygen ions may exist in the plasma generated by the remote plasma source. This is because the working gas often contains impurity gases, such as air. These impurity gases will also be ionized in the plasma source, thereby generating impurity ions such as oxygen ions. The presence of these impurity ions will not only affect the processing effect, but also cause potential damage to the equipment.

[0005] The most critical thing is that the oxygen ions from the above two sources will react with the inner wall of the reaction chamber and the stage in the reaction chamber under high temperature. This oxidation reaction will cause the gradual deterioration of the inner wall of the reaction chamber and the stage material, thereby greatly reducing the service life of the reaction chamber and the stage. This not only increases the maintenance cost of the equipment, but may also affect the processing accuracy and efficiency.

[0006] In addition, existing remote plasma processing equipment often uses inert gas protection or vacuum environment to deal with oxidation reaction problems. However, these methods not only increase the complexity and operating costs of the equipment, but may not be fully applicable in certain specific processing processes.

[0007] Therefore, how to effectively solve the oxidation problem in remote plasma processing equipment, extend the service life of key components of the equipment, and ensure processing effect and efficiency has become a technical problem that needs to be solved urgently. Developing a remote plasma processing equipment that can effectively inhibit oxidation reactions while maintaining equipment performance and processing quality has important practical significance and application value.

[0008] In view of the above problems, the existing technology needs to be improved urgently. Summary of the invention

[0009] The purpose of the present application is to provide a remote plasma processing device that can inhibit oxidation of a reaction chamber and a stage and extend the service life of the reaction chamber and the stage.

[0010] The present application provides a remote plasma processing device, comprising a remote plasma source, a reaction chamber and a stage, wherein the plasma output port of the remote plasma source is connected to the reaction chamber, and the stage is arranged in the reaction chamber; the lower part of the reaction chamber is filled with an electrolyte solution, the lower part of the stage is immersed in the electrolyte solution, an anode metal piece is arranged in the reaction chamber, the activity of the anode metal piece is higher than the activity of the inner wall material of the reaction chamber and the material of the stage, and the anode metal piece partially extends into the electrolyte solution.

[0011] By filling the lower part of the reaction chamber with electrolyte solution and setting a highly active anode metal piece, oxygen ions can be effectively absorbed and consumed, thereby inhibiting the oxidation reaction of the reaction chamber and the stage and extending the service life of the reaction chamber and the stage.

[0012] Preferably, the temperature resistance of the electrolyte solution is not lower than 600°C; and the melting point of the anode metal piece is not lower than 600°C.

[0013] Preferably, the inner wall material of the reaction chamber and the material of the stage are aluminum alloy or steel; and the material of the anode metal piece is calcium.

[0014] Preferably, the anode metal member is a metal sheet, a metal mesh or a porous metal block.

[0015] This design can effectively increase the contact area between the anode metal parts and the electrolyte solution, thereby improving the reaction efficiency.

[0016] Preferably, the remote plasma source includes a resonant cavity and a microwave head, the resonant cavity is provided with an air inlet and a plasma output port, the air inlet is used to deliver a working gas to the resonant cavity, the microwave head is connected to the resonant cavity and is used to send microwaves to the resonant cavity to ionize the working gas into plasma, and the plasma output port is used to output the plasma.

[0017] Preferably, the plasma output port is connected to a filter cavity, a filter is arranged in the filter cavity, the filter cavity is connected to the reaction cavity at the downstream of the filter, and the filter can filter particulate matter in the airflow.

[0018] The filter can capture particles in the airflow and prevent them from entering the reaction chamber, thereby improving the processing quality and equipment life. This design can not only ensure the purity of the plasma airflow, but also reduce equipment maintenance costs, improve processing efficiency and product quality.

[0019] Preferably, the filter chamber is connected to an impurity output pipe, which is located on the upstream side of the filter and is used to discharge the particulate matter.

[0020] Preferably, the filter is also used to filter out impurity plasma in the airflow by reacting with the impurity plasma in the airflow; the impurity plasma is plasma formed by ionization of impurity gas.

[0021] Preferably, the filter comprises multiple layers of metal filter screens, and the materials of the metal filter screens in each layer are not all the same, and the metal filter screens of different materials are used to react with different impurity plasmas.

[0022] Preferably, the filter is capable of reacting with oxygen ions, and the filter is electrically conductively connected to the anode metal member.

[0023] Beneficial effect: The remote plasma processing equipment provided in the present application can effectively absorb and consume oxygen ions by filling the lower part of the reaction chamber with an electrolyte solution and providing a highly active anode metal part, thereby inhibiting the oxidation reaction of the reaction chamber and the stage and extending the service life of the reaction chamber and the stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic structural diagram of a remote plasma processing device provided in an embodiment of the present application.

[0025] Figure 2 A schematic diagram of the structure of a filter chamber.

[0026] Explanation of reference numerals: 1. Remote plasma source; 2. Reaction chamber; 201. Observation window; 3. Stage; 4. Electrolyte solution; 6. Anode metal piece; 7. Resonant cavity; 701. Air inlet; 8. Microwave head; 9. Filter cavity; 901. Impurity output pipe; 902. Constraint coil; 903. Discharge pipe; 904. Annular diverter hood; 905. Annular flow channel; 10. Filter. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0028] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0029] Remote plasma processing equipment uses a remote plasma source to ionize the working gas to form plasma, and sends it into the reaction chamber to etch the workpiece, clean the surface, or deposit thin films. However, during this process, the temperature in the reaction chamber usually reaches over 600 degrees. At such a high temperature, the oxygen in the air remaining in the reaction chamber will be ionized to form oxygen ions. In addition, since the working gas may contain impurity gases (such as air), oxygen ions may also exist in the plasma generated by the remote plasma source. These oxygen ions will undergo oxidation reactions with the inner wall of the reaction chamber and the stage in the reaction chamber under high temperature conditions, resulting in a significant shortening of the life of the reaction chamber and the stage. This problem seriously affects the durability and reliability of the equipment, increases maintenance costs, and may lead to a decline in processing quality.

[0030] If the problem of oxidation of the reaction chamber and the stage cannot be effectively solved, a series of serious technical consequences will occur. First, the service life of the reaction chamber and the stage will be greatly shortened, which means that the maintenance frequency and cost of the equipment will increase significantly. Secondly, oxidation corrosion will change the surface characteristics of the reaction chamber and the stage, which may affect the distribution uniformity and stability of the plasma, thereby reducing the processing accuracy and consistency. Furthermore, the shedding of oxide particles will introduce contamination and directly affect the product yield. Finally, frequent equipment shutdown maintenance will greatly reduce production efficiency and increase production costs. Therefore, the development of a technical solution that can effectively prevent the oxidation of the reaction chamber and the stage is of great significance to improving the performance and reliability of remote plasma processing equipment.

[0031] To do this, please refer to Figure 1The present application provides a remote plasma processing device, including a remote plasma source 1, a reaction chamber 2 and a stage 3, wherein the plasma output port of the remote plasma source 1 is connected to the reaction chamber 2, and the stage 3 is arranged in the reaction chamber 2; the lower part of the reaction chamber 2 is filled with an electrolyte solution 4, the lower part of the stage 3 is immersed in the electrolyte solution 4, and an anode metal piece 6 is arranged in the reaction chamber 2, the activity of the anode metal piece 6 is higher than the activity of the inner wall material of the reaction chamber 2 and the material of the stage 3, and the anode metal piece 6 partially extends into the electrolyte solution 4.

[0032] In order to suppress the oxidation of the reaction chamber 2 and the stage 3, the present application proposes a new idea: instead of directly preventing the oxidation reaction, the reaction chamber 2 and the stage 3 are protected by introducing the principle of sacrificial anode. The principle of this design is to use electrochemical reactions to protect the reaction chamber 2 and the stage 3. The highly active anode metal part 6 will preferentially react with oxygen ions to release electrons. These electrons will flow to the inner wall of the reaction chamber 2 and the stage 3, increasing the electron density on its surface, reducing its electrode potential, and making it more difficult to be oxidized. This method cleverly utilizes the difference in chemical reaction activity to achieve protection of the reaction chamber 2 and the stage 3.

[0033] Among them, in the present application, the electrolyte solution 4 is not limited to be liquid at room temperature. Since most of the working conditions of the reaction chamber 2 are in a high temperature state (sometimes it also works at room temperature, such as using oxygen ions to clean photoresist at room temperature), the electrolyte solution 4 is required to have good high temperature resistance and be able to remain stable under high temperature conditions without decomposition or deterioration.

[0034] Generally, since the temperature of the reaction chamber 2 can reach 600°C when working at high temperature, the temperature resistance of the electrolyte solution 4 is preferably not less than 600°C. Specifically, a high temperature resistant ionic liquid or molten salt can be selected as the electrolyte solution 4. For example, a mixture of sodium chloride and potassium chloride can be used as the electrolyte solution 4, or a mixture of potassium fluoride and lithium fluoride can be used as the electrolyte solution 4. In the case of using molten salt or other substances that are solid at room temperature as the electrolyte solution 4, it is necessary to heat and melt it before use. A heating device can be provided at the lower part of the reaction chamber 2 to heat the molten salt or other substances that are solid at room temperature so that it melts into the electrolyte solution 4.

[0035] Furthermore, the melting point of the anode metal member 6 is not less than 600° C., so as to ensure that the anode metal member 6 will not melt in a high temperature environment and can continue to play its role.

[0036] The materials of the reaction chamber 2, the stage 3 and the anode metal piece 6 can be set according to actual needs. For example, in some possible embodiments, the inner wall material of the reaction chamber 2 and the stage 3 are made of aluminum alloy or steel, which have low activity and are not easily oxidized; the material of the anode metal piece 6 is calcium, which is a highly active metal and is more easily oxidized than the inner wall of the reaction chamber 2 and the stage 3; but the material selection is not limited thereto.

[0037] The shape of the anode metal member 6 can be set according to actual needs. Preferably, the anode metal member 6 is a metal sheet, a metal mesh or a porous metal block.

[0038] This design can effectively increase the contact area between the anode metal part 6 and the electrolyte solution 4, thereby improving the reaction efficiency. Specifically, the metal sheet has a simple structure and is easy to manufacture and replace; the metal mesh structure has a large specific surface area, which is conducive to the reaction; and the porous metal block has the advantages of both structural strength and large specific surface area.

[0039] When a metal sheet is selected as the anode metal member 6, its thickness can be set according to actual needs. The metal sheet can be rectangular, circular or other suitable shapes, and its area can be adjusted according to the size of the reaction chamber 2 and actual needs.

[0040] When a metal mesh is selected as the anode metal member 6 , the metal mesh may be woven from metal wires. The shape of the metal mesh may be circular or rectangular, and the diameter or side length may be adjusted according to the size of the delivery pipe 5 .

[0041] When a porous metal block is selected as the anode metal member 6, the porous metal block can be manufactured by powder metallurgy technology, and the porosity can be controlled between 30% and 70%. The shape of the porous metal block can be cylindrical or cubic, and its size can be customized according to the size of the delivery pipe 5.

[0042] The remote plasma source 1 refers to a device for generating plasma, which can be implemented by a microwave plasma source, a radio frequency plasma source or an inductively coupled plasma source.

[0043] In some embodiments, the remote plasma source 1 is a microwave plasma source, specifically, see Figure 1 The remote plasma source 1 includes a resonant cavity 7 and a microwave head 8. The resonant cavity 7 is provided with an air inlet 701 and a plasma output port. The air inlet 701 is used to deliver working gas to the resonant cavity 7. The microwave head 8 is connected to the resonant cavity 7 and is used to send microwaves to the resonant cavity 7 to ionize the working gas into plasma. The plasma output port is used to output plasma.

[0044] Specifically, the resonant cavity 7 can be designed in a variety of shapes, such as cylindrical, rectangular or other specific shapes, to optimize the distribution of microwave energy and the efficiency of plasma generation. The gas inlet 701 can be set on the side wall or bottom of the resonant cavity 7, and its position and number can be adjusted according to specific needs to ensure that the working gas can be evenly distributed in the resonant cavity 7.

[0045] The microwave head 8 and the resonant cavity 7 can be connected in various ways, such as by connecting through a waveguide (such as Figure 1 As shown) or directly mounted on the resonant cavity 7. The power and frequency of the microwave head 8 can be adjusted according to the requirements of plasma generation, for example, using industrial microwave frequencies of 2.45 GHz or 915 MHz, but not limited thereto.

[0046] The reaction chamber 2 may be directly connected to the plasma output port of the resonance chamber 7 .

[0047] But more preferably, see Figure 1 The plasma output port is connected to a filter chamber 9, a filter 10 is arranged in the filter chamber 9, the filter chamber 9 is connected to the reaction chamber 2 at the downstream of the filter 10, and the filter 10 can filter particulate matter in the airflow.

[0048] In remote plasma processing equipment, there may be particulate contamination in the plasma gas flow, and these particulates may affect the processing quality and equipment performance. In order to solve this problem, the present application adds a filter device 10 between the plasma output port and the reaction chamber 2. Specifically, the plasma output port is connected to a filter chamber 9, which provides an installation space for the filter 10. The filter 10 is arranged in the filter chamber 9 to filter particulate matter in the gas flow.

[0049] The filter chamber 9 can be in various shapes and structures, such as cylindrical, square or other suitable geometric shapes. The material of the filter chamber 9 should be able to withstand high temperature and plasma environment, and heat-resistant metal or ceramic material can be selected. The size of the filter chamber 9 should be determined according to the flow rate of the plasma gas flow and the size of the filter 10 to ensure that there is enough space to accommodate the filter 10 and allow the gas flow to pass smoothly.

[0050] The filter 10 can be of various types, such as metal mesh, ceramic filter or porous material. When selecting the filter 10, its temperature resistance, chemical stability and filtering efficiency for specific particles need to be considered. For example, a structure of stacking multiple layers of metal mesh can be used, and the mesh size of each layer of metal mesh can be gradually reduced to achieve step-by-step filtering of particles of different sizes.

[0051] By adding a filter chamber 9 and a filter 10 between the plasma output port and the reaction chamber 2, the present application effectively solves the problem of particle contamination in the plasma gas flow. The filter 10 can capture particles in the gas flow and prevent these particles from entering the reaction chamber 2, thereby improving the processing quality and equipment life. This design can not only ensure the purity of the plasma gas flow, but also reduce equipment maintenance costs, improve processing efficiency and product quality.

[0052] Further, see Figure 1 , Figure 2 An impurity output pipe 901 may be connected to the filter chamber 9 , and the impurity output pipe 901 is located on the upstream side of the filter 10 and is used to discharge particulate matter.

[0053] This design can effectively solve the technical problem of discharging particles in the filter cavity 9 in the remote plasma processing equipment. Specifically, the impurity output pipe 901 is arranged on the upstream side of the filter 10, so that the particles can be discharged before being captured by the filter 10. In addition, the particles that fall after being captured by the filter 10 can also be discharged from the impurity output pipe 901. Such a design can not only ensure the filtering effect, but also prevent the accumulation of particles on the filter 10 and cause blockage.

[0054] Furthermore, the impurity output pipe 901 can adopt a variety of design schemes. For example, the impurity output pipe 901 can be a straight pipe or a curved pipe. The material of the impurity output pipe 901 can be selected from high temperature resistant and corrosion resistant materials, such as stainless steel or ceramic materials. The diameter of the impurity output pipe 901 can be designed according to actual needs. The length of the impurity output pipe 901 can also be adjusted according to actual conditions to ensure that the particles can be discharged smoothly.

[0055] The connection between the impurity output pipe 901 and the filter chamber 9 can be flange connection, threaded connection or welding. In order to facilitate maintenance and cleaning, a detachable connection can be adopted. In addition, the outlet of the impurity output pipe 901 can be connected to a collection container or an exhaust system to collect and process the discharged particulate matter.

[0056] In order to make the particles intercepted by the filter 10 fall off and be discharged, a vibration device (such as an ultrasonic device, a piezoelectric vibration device) can be set in the reaction chamber 2 to drive the filter 10 to vibrate, thereby shaking off the particles on the filter 10 and discharging them; this is beneficial to reducing the frequency of shutdown and cleaning of the filter 10.

[0057] In some preferred embodiments, see Figure 2The filter chamber 9 also includes a restraining coil 902, at least one discharge pipe 903 and an annular diverter cover 904; the restraining coil 902 is sleeved outside the filter chamber 9 and located upstream of the filter 10, and the restraining coil 902 is used to generate a restraining magnetic field to restrain the plasma flow in the middle of the filter chamber 9; the annular diverter cover 904 is arranged between the filter 10 and the restraining coil 902, and the middle part of the annular diverter cover 904 has a through hole for the plasma flow to pass through, and the outer side surface of the annular diverter cover 904 and the inner wall surface of the filter chamber 9 form an annular flow channel 905 with an opening facing the entrance of the filter chamber 9; the discharge pipe 903 is connected to one end of the annular flow channel 905 away from the entrance of the filter chamber 9, and is used to discharge the airflow entering the annular flow channel 905.

[0058] Thus, when the airflow enters the filter chamber 9, the plasma is concentrated near the central axis of the filter chamber 9 due to the action of the constrained magnetic field, so that it can pass through the through hole of the annular diverter cover 904, and the outer airflow will enter the annular flow channel 905 and be discharged from the exhaust pipe 903. Since the particulate matter in the airflow is not affected by the constrained magnetic field, most of the particulate matter will be discharged from the exhaust pipe 903 with the outer airflow, thereby greatly reducing the particulate matter reaching the filter 10, further reducing the accumulation speed of the particulate matter on the filter 10, and further reducing the frequency of shutdown and cleaning of the filter 10.

[0059] Further, see Figure 2 The distance between the outer side surface of the annular diversion cover 904 and the inner wall surface of the filter chamber 9 gradually decreases along the airflow direction, thereby guiding the airflow entering the annular flow channel 905, so that the airflow in the annular flow channel 905 can be discharged from the discharge pipe 903 more smoothly.

[0060] In some preferred embodiments, the filter 10 is also used to filter out impurity plasma in the airflow by reacting with the impurity plasma in the airflow; the impurity plasma is plasma formed by ionization of impurity gas.

[0061] The sources of impurity gases generally include: impurity gases carried by the working gas input into the reaction chamber 2 itself, and external air entering the reaction chamber 2 due to sealing defects of the reaction chamber 2 or pipelines. Therefore, the impurity gases may include air or other gases.

[0062] Here, the filter 10 can not only filter conventional particulate matter, but also remove finer impurity plasma through chemical reaction. This dual filtering mechanism significantly improves the purity of plasma and provides a cleaner working environment for remote plasma processing.

[0063] The filter 10 itself may be made of a material that can react with the impurity plasma, or a substance that can react with the impurity plasma (such as a coating, active particles, etc.) may be added to the filter 10 to filter out the impurity plasma.

[0064] In some possible implementations, the filter 10 includes multiple layers of metal filter screens, and the materials of the metal filter screens in each layer are not all the same. The metal filter screens of different materials are used to react with different impurity plasmas.

[0065] Multiple layers of metal filters made of different materials can specifically handle various impurity plasmas and improve the filtering effect. For example, filters made of different metal materials such as aluminum, calcium, titanium, and nickel can be selected. Each metal has a strong reactivity to a specific impurity plasma. Aluminum filters and calcium filters may have a better adsorption effect on oxygen ions, while titanium filters may be more sensitive to nitrogen ions. Through this multi-layer design, it can be ensured that different types of impurity plasmas can be effectively filtered. The number of layers and material type of the metal filter can be adjusted according to actual needs.

[0066] Furthermore, these metal filters can be arranged in a specific order to optimize the filtering effect. For example, the metal filter with stronger reactivity can be placed near the plasma input end, while the metal filter with weaker reactivity can be placed near the output end. This arrangement can ensure that most of the impurity plasma is filtered out in the initial stage, and can also extend the service life of the entire filter 10.

[0067] Furthermore, the filter 10 and the filter chamber 9 may be connected in a detachable manner.

[0068] This design makes it easier to replace and maintain the filter 10. When the filter 10 needs to be cleaned or replaced, it can be easily removed from the filter chamber 9 without disassembling the entire device. This not only improves the maintenance efficiency of the device, but also extends the service life of the device. For example, a snap-on or threaded connection method can be used, allowing the operator to complete the removal and installation of the filter 10 in a few minutes.

[0069] In addition, the detachable connection design also allows different types of filters 10 to be replaced according to different working conditions. For example, when processing working gas containing a large amount of oxygen impurities, a filter 10 rich in aluminum filter or calcium filter can be installed; and when processing working gas containing nitrogen impurities, a filter 10 containing titanium filter can be quickly replaced. This flexibility greatly improves the adaptability and working efficiency of the equipment.

[0070] Preferably, grid lines of adjacent metal filter screens are staggered with each other.

[0071] This design can increase the filtration area, improve filtration efficiency, and prevent impurity plasma from directly passing through multiple layers of filters. Specifically, when the grid lines of adjacent metal filters are misaligned with each other, impurity plasma that was not intercepted by the previous layer of filters is likely to be intercepted by the misaligned grid lines of the next layer. This misaligned design actually creates a more complex filtration path, forcing the impurity plasma to make multiple turns when passing through multiple layers of filters, thereby increasing the probability of being captured.

[0072] Furthermore, the misalignment of the grid lines can be achieved in a variety of ways. For example, two adjacent layers of metal filter screens can be rotated at a 45-degree angle, or the mesh plane can be translated horizontally and / or vertically (the horizontal and vertical directions are two mutually perpendicular directions on the mesh plane, generally, the extension directions of the grid lines in two mutually intersecting directions). As a preferred embodiment, adjacent metal filter screens can be staggered so that the grid lines of two adjacent layers form a "M"-shaped structure. This structure can maximize the filtration area while ensuring that there is no straight channel for impurity plasma to pass directly through.

[0073] In some preferred embodiments, the filter 10 is capable of reacting with oxygen ions, and the filter 10 is electrically connected to the anode metal member 6 .

[0074] Therefore, when the airflow passes through the filter 10, the filter 10 reacts with the oxygen ions and releases electrons, which flow to the inner wall of the reaction chamber 2 and the stage 3 through the anode metal member 6, increasing the electron density on the surface, reducing the electrode potential, and making it difficult to be oxidized. Therefore, the protection of the inner wall of the reaction chamber 2 and the stage 3 can be further improved.

[0075] For example, an aluminum filter or a calcium filter may be provided in the filter 10 to enable the filter 10 to react with oxygen ions.

[0076] The filter 10 and the anode metal member 6 may be connected by a conductive member (such as a wire), or the anode metal member 6 may extend into the filter cavity 9 and directly contact the filter 10 (such as Figure 1 as shown).

[0077] Preferably, the anode metal member 6 contacts the inner wall of the reaction chamber 2 and / or the stage 3, so that the electrons released by the anode metal member 6 flow to the inner wall of the reaction chamber 2 and / or the stage 3 more efficiently, thereby further improving the protection effect.

[0078] In some embodiments, an observation window 201 is provided on the reaction chamber 2 for allowing a user to observe the internal working conditions of the reaction chamber 2 .

[0079] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0080] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A remote plasma processing device, comprising a remote plasma source (1), a reaction chamber (2) and a stage (3), wherein a plasma output port of the remote plasma source (1) is connected to the reaction chamber (2), and the stage (3) is arranged in the reaction chamber (2); characterized in that: The lower part of the reaction chamber (2) is filled with an electrolyte solution (4), the lower part of the stage (3) is immersed in the electrolyte solution (4), an anode metal piece (6) is arranged in the reaction chamber (2), the activity of the anode metal piece (6) is higher than the activity of the inner wall material of the reaction chamber (2) and the material of the stage (3), and the anode metal piece (6) partially extends into the electrolyte solution (4).

2. The remote plasma processing device according to claim 1, characterized in that: The temperature resistance of the electrolyte solution (4) is not less than 600° C.; and the melting point of the anode metal piece (6) is not less than 600° C.

3. The remote plasma processing device according to claim 1, characterized in that: The material of the inner wall of the reaction chamber (2) and the material of the stage (3) are aluminum alloy or steel; the material of the anode metal piece (6) is calcium.

4. The remote plasma processing device according to claim 1, characterized in that: The anode metal member (6) is a metal sheet, a metal mesh or a porous metal block.

5. The remote plasma processing device according to claim 1, characterized in that: The remote plasma source (1) comprises a resonant cavity (7) and a microwave head (8); the resonant cavity (7) is provided with an air inlet (701) and a plasma output port; the air inlet (701) is used to deliver a working gas to the resonant cavity (7); the microwave head (8) is connected to the resonant cavity (7) and is used to send microwaves to the resonant cavity (7) to ionize the working gas into plasma; and the plasma output port is used to output the plasma.

6. The remote plasma processing device according to claim 5, characterized in that: The plasma output port is connected to a filter chamber (9), a filter (10) is arranged in the filter chamber (9), the filter chamber (9) is connected to the reaction chamber (2) at a location downstream of the filter (10), and the filter (10) is capable of filtering particulate matter in the airflow.

7. The remote plasma processing device according to claim 6, characterized in that: The filter chamber (9) is connected to an impurity output pipe (901), and the impurity output pipe (901) is located on the upstream side of the filter (10) and is used to discharge the particulate matter.

8. The remote plasma processing device according to claim 6, characterized in that: The filter (10) is also used to filter out impurity plasma in the airflow by reacting with the impurity plasma in the airflow; the impurity plasma is plasma formed by ionization of impurity gas.

9. The remote plasma processing device according to claim 8, characterized in that: The filter (10) comprises multiple layers of metal filter screens, the materials of the metal filter screens in each layer are not all the same, and the metal filter screens of different materials are used to react with different impurity plasmas.

10. The remote plasma processing device according to claim 8, characterized in that: The filter (10) is capable of reacting with oxygen ions, and the filter (10) is electrically conductively connected to the anode metal member (6).

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