Inductance element, preparation method thereof and electronic equipment

Abstract

The invention relates to the technical field of inductance elements, in particular to an inductance element, a preparation method thereof and electronic equipment. The inductor element comprises an inductor body and a physical vapor deposition metal layer. The inductor body has an assembly surface. A physical vapor deposition metal layer is disposed on the assembly surface. Wherein a separation groove is arranged between two ends of the physical vapor deposition metal layer in the direction parallel to the assembly surface, the separation groove is configured to cut off the physical vapor deposition metal layer into two parts along the thickness direction of the physical vapor deposition metal layer, one part of the physical vapor deposition metal layer forms a first extraction electrode of the inductor body, and the other part of the physical vapor deposition metal layer forms a second extraction electrode of the inductor body. And the other part of the physical vapor deposition metal layer forms a second extraction electrode of the inductor body. According to the inductance element, the physical vapor deposition metal layer is used as the electrode, the physical vapor deposition metal layer has the advantage of being small in thickness, the volume ratio of the inductance body in the inductance element can be increased, and then the inductance value of the inductance element is improved.

Description

Technical Field

[0001] The present application relates to the technical field of inductor components, and in particular to an inductor component and a preparation method thereof, and an electronic device. Background Art

[0002] In the art, the electrode of the inductor element is a plated metal layer, and the thickness of the plated metal layer needs to be thick to ensure the continuity of the plated metal layer. An overly thick plated layer causes the volume proportion of the inductor part in the inductor element to decrease, and the electrical characteristics such as inductance decrease. Summary of the invention

[0003] The embodiments of the present application disclose an inductor element and a method for preparing the same, and an electronic device, which can increase the volume ratio of the inductor body in the inductor element, thereby improving the inductance of the inductor element.

[0004] In order to achieve the above objectives, in a first aspect, an embodiment of the present application discloses an inductor element, including:

[0005] an inductor body, the inductor body having an assembly surface; and

[0006] A physical vapor deposition metal layer, wherein the physical vapor deposition metal layer is disposed on the assembly surface;

[0007] In which, in a direction parallel to the assembly surface, a separation groove is provided between the two ends of the physical vapor deposited metal layer, and the separation groove is configured to disconnect the physical vapor deposited metal layer into two parts along the thickness direction of the physical vapor deposited metal layer, wherein a part of the physical vapor deposited metal layer is formed as the first lead-out electrode of the inductor body, and the other part of the physical vapor deposited metal layer is formed as the second lead-out electrode of the inductor body.

[0008] In a possible implementation of the first aspect, the physical vapor deposited metal layer includes multiple physical vapor deposited metal sublayers, which are stacked in sequence along a direction away from the inductor body, and the thickness of each physical vapor deposited metal sublayer is 0.1μm to 2μm.

[0009] In a possible implementation manner of the first aspect, the plurality of physical vapor deposited metal sublayers are a combination of one or more of a primer layer, a transition layer or an anti-oxidation layer.

[0010] In a possible implementation of the first aspect, when the number of the physical vapor deposited metal sublayers is three, the three physical vapor deposited metal sublayers are the base layer, the transition layer and the anti-oxidation layer, and the base layer, the transition layer and the anti-oxidation layer are stacked sequentially on the surface of the inductor body in a direction away from the inductor body.

[0011] In a possible implementation of the first aspect, the material of the base layer is selected from at least one of chromium or titanium;

[0012] And / or, the material of the transition layer contains nickel;

[0013] And / or, the material of the anti-oxidation layer is selected from at least one of silver and tin;

[0014] And / or, the total thickness of the primer layer, the transition layer and the anti-oxidation layer is 0.3 μm to 6 μm.

[0015] In a possible implementation manner of the first aspect, in the thickness direction of the inductor body, the separation groove further extends into a part of the inductor body.

[0016] In a possible implementation of the first aspect, the inductor body includes a magnet and a coil, the coil is wrapped in the magnet, the assembly surface is located on the magnet, the coil has two lead ends, and the two lead ends are respectively electrically connected to the first lead electrode and the second lead electrode; in the thickness direction of the magnet, the separating groove extends into the magnet and is spaced apart from the coil.

[0017] In a possible implementation of the first aspect, the magnet includes an insulator and a plurality of magnetic powder particles wrapped in the insulator;

[0018] And / or, the thickness of the magnet is T1, the thickness of the physical vapor deposition metal layer is T2, T2 / T1=0.05% to 1.09%;

[0019] and / or, in the thickness direction of the magnet, the depth of the separation groove is 30 μm to 50 μm;

[0020] And / or, the thickness of the magnet is 0.5 mm to 0.7 mm.

[0021] In a second aspect, an embodiment of the present application discloses a method for preparing an inductor element as described in the first aspect, comprising the following steps:

[0022] Shielding the non-deposition area: placing a shielding member on the assembly surface of the inductor body, in a direction parallel to the assembly surface, the shielding member is at least partially located between the two ends of the assembly surface;

[0023] Physical vapor deposition: Physical vapor deposition is performed on the assembly surface in a vacuum environment to obtain the physical vapor deposition metal layer.

[0024] In a possible implementation manner of the second aspect, the inductor body further includes an end surface and a side surface, the end surface is arranged opposite to the assembly surface, and the side surface is connected between the end surface and the assembly surface;

[0025] In the step of shielding the non-deposition area, a plurality of the inductor bodies are placed side by side in a fixture, the end surface of each of the inductor bodies is shielded by the fixture, and the side surfaces of two adjacent inductor bodies are attached to each other and shielded.

[0026] In a third aspect, an embodiment of the present application discloses an electronic device, comprising the inductor element as described in the first aspect, or comprising the inductor element manufactured by the manufacturing method as described in the second aspect.

[0027] Compared with the prior art, the beneficial effects of this application are:

[0028] The present application utilizes a physical vapor deposited metal layer as an electrode. The physical vapor deposited metal layer can maintain good film continuity while being relatively thin, thereby making the physical vapor deposited metal layer have the characteristics of being relatively thin, high in density, good in adhesion and being resistant to welding.

[0029] The present application also provides a separation groove on the physical vapor deposited metal layer, and the separation groove is configured to disconnect the physical vapor deposited metal layer into two parts along the thickness direction of the physical vapor deposited metal layer, wherein one part of the physical vapor deposited metal layer is formed as the first lead-out electrode of the inductor body, and the other part of the physical vapor deposited metal layer is formed as the second lead-out electrode of the inductor body, thereby solving the problem that the physical vapor deposited metal layer is difficult to use as two separated lead-out electrodes, so that the inductor element can use the thinner physical vapor deposited metal layer as an electrode, which is beneficial to increase the volume proportion of the inductor body in the inductor element, thereby improving the electrical performance of the inductor element such as inductance and current. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 A schematic diagram of the structure of an inductor element disclosed in the first aspect of the present application;

[0032] Figure 2 for Figure 1 A partial enlarged view of area Ⅰ shown in FIG;

[0033] Figure 3A schematic diagram of assembling the inductor element and the carrier disclosed in the first aspect of the present application;

[0034] Figure 4 This is a schematic diagram of the working of the clamp and the shielding member in the preparation method disclosed in the second aspect of the present application.

[0035] Description of reference numerals:

[0036] 10. Inductor element; 11. Inductor body; 111. Assembly surface; 112. Magnet; 113. Coil; 114. End surface; 115. Side surface; 1131. Lead end; 12. Physical vapor deposited metal layer; 121. Base layer; 122. Transition layer; 123. Anti-oxidation layer; 13. Separation groove; 14. First lead electrode; 15. Second lead electrode; Z. Thickness direction of physical vapor deposited metal layer; Y. Direction parallel to the assembly surface; 20. Carrier; 30. Shielding member; 40. Fixture. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0038] In this application, the directions or positional relationships indicated by the terms "upper", "inner", etc. are based on the directions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific direction, or to be constructed and operated in a specific direction.

[0039] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.

[0040] In addition, the terms "disposed", "provided with", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0041] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.

[0042] In this field, the electrodes of inductor components are mostly made by electroplating. This is because electroplating can produce the required plating structure for patch welding. However, the plating solution is generally a strong acid or a strong base. Long-term immersion in an acid or alkaline solution will corrode the inductor component, and the micropores, pits and other locations in the inductor component are easy to enter the plating solution, resulting in the electroplating material remaining inside the inductor component. During long-term use, the electroplating material will continue to corrode the inductor component, resulting in reduced electrical performance and reliability of the inductor component. In addition, when the thickness of the electroplated metal layer is thin, the continuity of the film layer is poor, and it cannot be used for welding or the connection is poor after welding. Therefore, the thickness of the electroplated metal layer must be thicker. An overly thick electroplating layer causes the volume proportion of the inductor part in the inductor component to decrease, and electrical characteristics such as inductance decrease.

[0043] Physical vapor deposition is mainly used to deposit a film layer on the entire surface of an object, but it is difficult to use it to make electrodes for inductors. This is because physical vapor deposition deposits the film layer on the entire surface, while the two lead electrodes of the inductor need to be separated from each other.

[0044] Based on the above analysis, an embodiment of the present application provides an inductor element, which has a separation groove on the physical vapor deposited metal layer, and the separation groove is configured to disconnect the physical vapor deposited metal layer into two parts along the thickness direction of the physical vapor deposited metal layer, wherein one part of the physical vapor deposited metal layer is formed as the first lead-out electrode of the inductor body, and the other part of the physical vapor deposited metal layer is formed as the second lead-out electrode of the inductor body, thereby solving the problem that the physical vapor deposited metal layer is difficult to use as two separated lead-out electrodes, so that the inductor element can use a thinner physical vapor deposited metal layer as an electrode, which is beneficial to increase the volume proportion of the inductor body in the inductor element, thereby improving the inductance of the inductor element.

[0045] The technical solution of the present invention will be described below in conjunction with embodiments and drawings.

[0046] First, see Figures 1 to 3 The embodiment of the present application discloses an inductor element 10, including an inductor body 11 and a physical vapor deposition metal layer 12. The inductor body 11 has an assembly surface 111. The physical vapor deposition metal layer 12 is disposed on the assembly surface 111.

[0047] Among them, in the direction Y parallel to the assembly surface, a separation groove 13 is provided between the two ends of the physical vapor deposited metal layer 12, and the separation groove 13 is configured to disconnect the physical vapor deposited metal layer 12 into two parts along the thickness direction Z of the physical vapor deposited metal layer, wherein one part of the physical vapor deposited metal layer 12 is formed as the first lead-out electrode 14 of the inductor body 11, and the other part of the physical vapor deposited metal layer 12 is formed as the second lead-out electrode 15 of the inductor body 11.

[0048] It should be noted that please combine Figure 3 The term "assembly surface 111" refers to a surface where the inductor body 11 is connected to the carrier 20 when the inductor element 10 is assembled on the carrier 20. The carrier 20 is, for example, a circuit board. The term "physical vapor deposition metal layer 12" refers to a metal layer produced by physical vapor deposition.

[0049] The present application utilizes a physical vapor deposited metal layer 12 as an electrode. The physical vapor deposited metal layer 12 can maintain good film continuity while being relatively thin, thereby making the physical vapor deposited metal layer 12 have the characteristics of being relatively thin, high in density, good in adhesion, and being resistant to welding.

[0050] The present application also provides a separation groove 13 on the physical vapor deposited metal layer 12, and the separation groove 13 is configured to disconnect the physical vapor deposited metal layer 12 into two parts along the thickness direction Z of the physical vapor deposited metal layer, wherein one part of the physical vapor deposited metal layer 12 is formed as the first lead-out electrode 14 of the inductor body 11, and the other part of the physical vapor deposited metal layer 12 is formed as the second lead-out electrode 15 of the inductor body 11, thereby solving the technical problem that the physical vapor deposited metal layer 12 is difficult to use for two separated lead-out electrodes, so that the inductor element 10 can use the thinner physical vapor deposited metal layer 12 as the lead-out electrode, which is beneficial to increase the volume ratio of the inductor body 11 in the inductor element 10, thereby improving the electrical performance of the inductor element 10 such as inductance and current.

[0051] In some embodiments, see Figure 1 and Figure 2 The physical vapor deposition metal layer 12 includes a plurality of physical vapor deposition metal sub-layers, and the plurality of physical vapor deposition metal sub-layers are stacked in sequence along a direction away from the inductor body 11 .

[0052] Since the physical vapor deposited metal sublayers are all thin, the present application can deposit multiple layers of physical vapor deposited metal sublayers and still enable the inductor body 11 to have a higher volume share. At the same time, by setting different characteristics of each physical vapor deposited metal sublayer, the physical vapor deposited metal layer 12 can have multiple composite characteristics.

[0053] It should be noted that if the thickness of the physical vapor deposited metal sublayer is less than 0.1μm, the continuity and density of the physical vapor deposited metal sublayer will be poor, and it will be easily oxidized. If the thickness of the physical vapor deposited metal sublayer is greater than 2μm, the film stress will be large and the adhesion will be poor. Preferably, the thickness of each physical vapor deposited metal sublayer is 0.1μm to 2μm, including any point value within this thickness range, for example, 0.1μm, 0.5μm, 1μm, 1.5μm or 2μm. The continuity of each physical vapor deposited metal sublayer in this thickness range is good, the film density is high, the oxidation resistance is good, the film stress is small, and the adhesion is high.

[0054] Optionally, the plurality of physical vapor deposited metal sub-layers are a combination of one or more of the primer layer 121 , the transition layer 122 or the anti-oxidation layer 123 .

[0055] Exemplarily, the number of physical vapor deposited metal sublayers is two, and the two physical vapor deposited metal sublayers are a base layer and a transition layer stacked sequentially in a direction away from the inductor body; or, the two physical vapor deposited metal sublayers are a transition layer or an anti-oxidation layer stacked sequentially in a direction away from the inductor body.

[0056] The base layer 121 is well combined with the assembly surface 111 to enhance the adhesion of the entire physical vapor deposition metal layer 12. Preferably, the material of the base layer 121 is selected from at least one of chromium or titanium. The inventors have found that the ion kinetic energy of chromium and titanium is large, and they can be well combined with the inductor element 10 during physical vapor deposition, especially when the assembly surface 111 is insulated, chromium and titanium can still be combined with the insulated assembly surface 111 and the continuity of the film layer is good. Chromium and titanium also have the characteristics of low synchronous resistivity, so that the inductor element 10 has the advantage of small DC resistance characteristics.

[0057] The transition layer 122 has the characteristic of high temperature resistance and plays a role of welding resistance. Preferably, the material of the transition layer 122 contains nickel. The nickel transition layer 122 can still withstand high temperatures when the thickness is relatively thin, thereby making the inductor element 10 have the characteristic of welding resistance during welding.

[0058] The function of the anti-oxidation layer 123 is to prevent the physical vapor deposition metal layer 12 from being oxidized, so that the physical vapor deposition metal layer 12 can be better combined with the circuit board during welding, reducing the solder rejection phenomenon. Preferably, the material of the anti-oxidation layer 123 is selected from at least one of silver or tin. The anti-oxidation layer 123 made of silver and tin has good anti-oxidation performance while being thin.

[0059] Preferably, see Figure 1 and Figure 2When the number of physical vapor deposited metal sublayers is three, the three physical vapor deposited metal sublayers are a base layer 121, a transition layer 122 and an anti-oxidation layer 123. The base layer 121, the transition layer 122 and the anti-oxidation layer 123 are stacked in sequence on the surface of the inductor body 11 in a direction away from the inductor body 11.

[0060] According to the above analysis, the physical vapor deposition metal layer 12 composed of the sequentially stacked base layer 121, transition layer 122 and anti-oxidation layer 123 will have the characteristics of good adhesion, welding resistance and oxidation resistance. The inductor element 10 can better combine with solder during welding, which is conducive to improving the connection strength after welding.

[0061] More preferably, the total thickness of the base layer 121, the transition layer 122 and the anti-oxidation layer 123 is 0.3μm to 6μm, including any point value within this thickness range, for example, 0.3μm, 2μm, 4μm or 6μm, so that the base layer 121, the transition layer 122 and the anti-oxidation layer 123 all have high film continuity, and the overall thickness is thin, which can make the volume of the inductor body 11 account for a higher proportion.

[0062] In some embodiments, see Figure 1 and Figure 2 In the thickness direction of the inductor body 11, the separation groove 13 also extends into a part of the inductor body 11. In this embodiment, the thickness direction of the inductor body 11 is the same direction as the thickness direction Z of the physical vapor deposition metal layer.

[0063] If the separation groove 13 only extends along the thickness direction Z of the physical vapor deposition metal layer, that is, the depth of the separation groove 13 is equal to the thickness of the physical vapor deposition metal layer 12, since the thickness of the physical vapor deposition metal layer 12 is relatively thin, the depth of the separation groove 13 is also relatively shallow, which is not conducive to the discharge of tin beads generated during welding. Then, in this embodiment, the separation groove 13 extends into the local inductor body 11 to increase its depth. The deeper separation groove 13 is conducive to the discharge of tin beads during welding. And before the physical vapor deposition of the inductor body 11, the separation groove 13 on the inductor body 11 is also conducive to the positioning of the shielding member so that the shielding member is accurately shielded in the non-deposition area.

[0064] Furthermore, the inductor body 11 includes a magnet 112 and a coil 113, the coil 113 is wrapped in the magnet 112, the assembly surface 111 is located on the magnet 112, and the coil 113 has two lead ends 1131, and the two lead ends 1131 are electrically connected to the first lead electrode 14 and the second lead electrode 15 respectively. In the thickness direction of the magnet 112, the separation groove 13 extends into the magnet 112 and is spaced from the coil 113. The separation groove 13 can be formed on the magnet 112 during the molding process of the magnet 112, for example, by making the separation groove on the magnet through a mold. The separation groove can also be formed by removing part of the material of the magnet 112 after the magnet 112 is molded.

[0065] Further, the magnet 112 includes an insulator and a plurality of magnetic powder particles wrapped in the insulator. The insulator is, for example, an epoxy resin insulator or a silicone resin insulator. Of course, the insulator can also be made of other materials. The magnetic powder particles are, for example, magnet powder, sendust magnetic powder, iron silicon magnetic powder or iron nickel molybdenum magnetic powder.

[0066] It is understandable that the assembly surface 111 on the magnet 112 is an insulating surface. If a metal layer is electroplated on the insulating surface by electroplating, it is necessary to first cover the insulating surface with silver paste and then electroplating. The entire process is complicated and costly. However, the present application uses physical vapor deposition to directly deposit a physical vapor deposition metal layer 12 on the insulating surface, thereby simplifying the manufacturing process, and the physical vapor deposition metal layer 12 has a strong adhesion to the insulating surface.

[0067] Preferably, the thickness of the magnet 112 is T1, the thickness of the physical vapor deposition metal layer 12 is T2, and T2 / T1=0.05% to 1.09%, including any point value within the ratio range, such as 0.05%, 0.1%, 0.5%, 0.7% or 1.09%. In this thickness ratio range, the physical vapor deposition metal layer 12 is thin but still has good film continuity and density, the volume of the magnet 112 accounts for a large proportion, and the electrical performance of the inductor element 10 is better, such as a higher inductance.

[0068] It is understandable that if the depth of the separation groove 13 is less than 30 μm, the physical vapor deposited metal layer 12 may not be separated, and the tin bead removal effect is poor. If the depth of the separation groove 13 is greater than 50 μm, the portion of the separation groove 13 extending into the magnet 112 is deeper, the volume proportion of the magnet 112 in the inductor element 10 will decrease, and the electrical performance of the inductor element 10 will be affected. Preferably, in the thickness direction of the magnet 112, the depth of the separation groove 13 is 30 μm to 50 μm, including any point value within the depth range, for example, 30 μm, 40 μm or 50 μm. The separation groove 13 in this depth range can not only effectively separate the physical vapor deposited metal layer 12 and efficiently remove tin beads during welding, but also enable the magnet 112 to have a higher volume proportion in the inductor element 10.

[0069] Preferably, the thickness T1 of the magnet 112 is 0.5 mm to 0.7 mm, including any value within the thickness range, such as 0.5 mm, 0.6 mm or 0.7 mm. The inductor element 10 made of the magnet 112 in this thickness range is a thin inductor element 10. Since the present application uses a thinner physical vapor deposition metal layer 12 with a thinner magnet 112, the thinner magnet 112 still has a higher volume share in the inductor element 10, the electrical performance of the inductor element 10 is excellent, and the overall thickness of the inductor element 10 is still thin, and the thin inductor element 10 is conducive to the thinness of electronic devices.

[0070] In a second aspect, an embodiment of the present application discloses a method for preparing an inductor element as described in the first aspect, comprising the following steps:

[0071] Shielding the non-deposition area: placing a shielding member on the assembly surface of the inductor body, in a direction parallel to the assembly surface, the shielding member is at least partially located between the two ends of the assembly surface;

[0072] Physical vapor deposition: Physical vapor deposition is performed on the assembly surface in a vacuum environment to obtain a physical vapor deposition metal layer.

[0073] like Figure 4 As shown, before the physical vapor deposition step, the preparation method uses a shielding member 30 to shield between the two ends of the assembly surface 111. The shielding member 30 is, for example, a mask, a shielding sheet, or a shielding film. In the subsequent physical vapor deposition step, the metal deposited on the non-deposition area is only plated on the shielding member, and then a separation groove separating the physical vapor deposition metal layer is formed on the non-deposition area, thereby solving the problem that physical vapor deposition is difficult to produce two mutually separated lead-out electrodes, so that the inductor element can use a thinner physical vapor deposition metal layer as an electrode, which is conducive to increasing the volume proportion of the inductor body in the inductor element, thereby improving the inductance of the inductor element.

[0074] Compared with the electroplating method, the preparation method has no electroplating material residue on the inductor element, reduces the rust and corrosion of the magnet, and is conducive to improving the durability and reliability of the inductor element. The preparation method can also directly deposit a physical vapor deposition metal layer on the insulating assembly surface, thereby relaxing the material restrictions of the inductor body, and the first lead electrode and the second lead electrode can be designed into various shapes to make the application range of the inductor element wider.

[0075] In some embodiments, Figure 4 As shown, the inductor body 11 further includes an end surface 114 and a side surface 115 . The end surface 114 is arranged opposite to the assembly surface 111 , and the side surface 115 is connected between the end surface 114 and the assembly surface 111 .

[0076] In the step of shielding the non-deposition area, a plurality of inductor bodies 11 are placed side by side in the fixture 40 , the end surface 114 of each inductor body 11 is shielded by the fixture 40 , and the side surfaces 115 of two adjacent inductor bodies 11 are attached to each other and shielded.

[0077] In the electroplating process of the related art, especially in the roller plating process, the inductor bodies will collide with each other and easily collapse, which will further cause creep plating, resulting in a poor appearance of the inductor component, and it is easy to connect with other devices during the assembly process, causing a short circuit risk. In contrast, the present application uses a clamp to fix the inductor body to reduce the collision phenomenon during the coating of the inductor body, thereby reducing the collapse of the inductor component. The present application also uses a clamp 40 to block the end face 114 of the inductor body 11, and the side faces 115 of the two adjacent inductor bodies 11 are attached to each other and blocked to avoid depositing metal on the non-deposition area. The appearance of the inductor component is better and the risk of short circuit during the assembly process is reduced.

[0078] In some embodiments, before the step of shielding the non-deposition area, the preparation method further comprises the following steps:

[0079] Surface treatment: In a negative pressure and heating environment, argon gas is introduced and bias voltage is applied to ionize the argon gas to form argon ions. The argon ions are used to bombard the assembly surface to remove oxides on the surface assembly surface and treat the assembly surface.

[0080] Optionally, in the surface treatment step, the vacuum degree of the negative pressure environment is (3.5-4.5)×10 -3 Pa, the temperature of the heating environment is 110°C to 130°C, the applied bias voltage is 450V to 550V, and the processing time is 5min to 10min.

[0081] After surface treatment, impurities such as oxides on the assembly surface are removed, which increases its surface activity and improves its adhesion to the target material, so that when a thinner physical vapor deposited metal layer is subsequently deposited, the physical vapor deposited metal layer still has high adhesion and film continuity.

[0082] In some embodiments, the step of physical vapor deposition includes:

[0083] depositing a primer layer on the assembly surface;

[0084] Depositing a transition layer on a side of the base layer away from the inductor body;

[0085] An anti-oxidation layer is deposited on a side of the transition layer facing away from the inductor body.

[0086] The physical vapor deposition forms a physical vapor deposition metal layer by sequentially depositing a base layer, a transition layer and an anti-oxidation layer. The physical vapor deposition metal layer has the characteristics of good adhesion, welding resistance and oxidation resistance. The inductor element can better combine with solder during welding to improve the connection strength after welding.

[0087] In a third aspect, an embodiment of the present application discloses an electronic device, including the inductor element as described in the first aspect, or including the inductor element obtained by the preparation method as described in the second aspect. The electronic device is, for example, a computer, a mobile phone, or a car computer.

[0088] The technical solution of the present invention will be described below in conjunction with embodiments.

[0089] Example 1

[0090] The method for preparing the inductor element provided in this embodiment comprises the following steps:

[0091] Surface treatment: vacuum degree 4×10 -3 In a negative pressure and heating environment with a pressure of 120°C and a temperature of 120°C, argon gas is introduced and a bias of 500V is applied to ionize the argon gas to form argon ions. The assembly surface is bombarded with argon ions for 7 minutes to remove oxides on the surface assembly surface and to process the assembly surface.

[0092] Blocking non-deposition area: Multiple inductor bodies are placed side by side in the fixture, the end faces of each inductor body are blocked by the fixture, and the side faces of two adjacent inductor bodies are attached to each other and blocked. The shielding piece is placed on the assembly surface of the inductor body, and in the direction parallel to the assembly surface, the shielding piece is at least partially located between the two ends of the assembly surface.

[0093] Physical vapor deposition: Physical vapor deposition is performed on the assembly surface in a vacuum environment. Chromium with a thickness of 0.6μm is deposited on the assembly surface as a base layer. Nickel with a thickness of 0.8μm is deposited on the side of the base layer away from the inductor body as a transition layer. Silver with a thickness of 0.6μm is deposited on the side of the transition layer away from the inductor body as an anti-oxidation layer to obtain the inductor element. In the inductor element, the base layer, the transition layer and the anti-oxidation layer constitute a physical vapor deposited metal layer. A separation groove is formed on the shielding area of ​​the shielding member on the assembly surface, and the separation groove disconnects the physical vapor deposited metal layer into two parts along the thickness direction of the physical vapor deposited metal layer, wherein a part of the physical vapor deposited metal layer is formed as the first lead-out electrode of the inductor body, and the other part of the physical vapor deposited metal layer is formed as the second lead-out electrode of the inductor body.

[0094] Example 2

[0095] The difference between this embodiment and embodiment 1 is that:

[0096] The base layer is made of titanium with a thickness of 0.7 μm. The anti-oxidation layer is 0.5 μm thick.

[0097] Comparative Example

[0098] The preparation method of the inductor element provided in the comparative example comprises the following steps:

[0099] The same inductor body as in Example 1 was used, and 15 μm thick copper was electroplated on the assembly surface of the inductor body as a base layer, and then 5 μm thick nickel was electroplated on the side of the base layer away from the inductor body as a transition layer, and finally 10 μm thick tin was electroplated on the side of the transition layer away from the inductor body as an anti-oxidation layer to obtain an inductor component.

[0100] The inductor components prepared in the embodiments and comparative examples are tested below. Please see Table 1 for the test results.

[0101] Table 1: Test results of inductor components

[0102]

[0103] It can be seen from Table 1 that in terms of electrical performance, the inductance and current of Example 1 and Example 2 are improved compared with the control example, and the resistance is not much different, indicating that in the inductor element prepared by the preparation method of the present application, a thinner physical vapor deposition metal layer is deposited as a lead-out electrode to increase the volume share of the magnet. After the volume share of the magnet is increased, the inductance and current of the inductor element are improved.

[0104] In terms of peeling force, the peeling forces of Examples 1 and 2 are comparable to those of the comparative example, indicating that the inductor element of the present application can still have comparable peeling force with the thicker electroplated metal electrode through the thinner physical vapor deposition metal layer.

[0105] In terms of corrosion resistance, since the plating solution used in the manufacturing process of the comparative example has a corrosive effect on the inductor body, and there are plating material residues on the inductor element obtained in the comparative example, while there are no plating material residues on the inductor elements obtained in Examples 1 and 2, the salt spray test time of Examples 1 and 2 is greatly improved compared with the comparative example, indicating that the corrosion resistance of the inductor elements of Examples 1 and 2 is greatly improved compared with the comparative example.

[0106] In terms of storage performance, since the inductor element of the comparative example is corroded during the electroplating process and there is residual electroplating material on the inductor element of the comparative example, the impact on the inductor element during the preparation process of Examples 1 and 2 is very small, and there is no residual electroplating material on the prepared inductor element, thereby extending the storage validity period of Examples 1 and 2 by 4 months compared with the comparative example.

[0107] In summary, the inductor element prepared by the preparation method provided in the embodiment of the present application has improved electrical performance, peel strength, corrosion resistance and storage performance compared with the control example using the electroplating process.

[0108] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An inductor element, characterized in that: include: An inductor body, wherein the inductor body has an assembly surface; as well as A physical vapor deposition metal layer, wherein the physical vapor deposition metal layer is disposed on the assembly surface; In which, in a direction parallel to the assembly surface, a separation groove is provided between the two ends of the physical vapor deposited metal layer, and the separation groove is configured to disconnect the physical vapor deposited metal layer into two parts along the thickness direction of the physical vapor deposited metal layer, wherein a part of the physical vapor deposited metal layer is formed as the first lead-out electrode of the inductor body, and the other part of the physical vapor deposited metal layer is formed as the second lead-out electrode of the inductor body.

2. The inductor element according to claim 1, characterized in that: The physical vapor deposition metal layer includes a plurality of physical vapor deposition metal sub-layers, which are stacked in sequence in a direction away from the inductor body, and each of the physical vapor deposition metal sub-layers has a thickness of 0.1 μm to 2 μm.

3. The inductor element according to claim 2, characterized in that: The plurality of physical vapor deposition metal sub-layers are a combination of one or more of a primer layer, a transition layer or an anti-oxidation layer.

4. The inductor element according to claim 3, characterized in that: When the number of the physical vapor deposited metal sublayers is three, the three physical vapor deposited metal sublayers are the base layer, the transition layer and the anti-oxidation layer, and the base layer, the transition layer and the anti-oxidation layer are sequentially stacked on the surface of the inductor body in a direction away from the inductor body.

5. The inductor element according to claim 3, characterized in that: The material of the base layer is selected from at least one of chromium and titanium; And / or, the material of the transition layer contains nickel; And / or, the material of the anti-oxidation layer is selected from at least one of silver and tin; And / or, the total thickness of the primer layer, the transition layer and the anti-oxidation layer is 0.3 μm to 6 μm.

6. The inductor element according to any one of claims 1 to 5, characterized in that: In the thickness direction of the inductor body, the separation groove further extends into the inductor body.

7. The inductor element according to claim 6, characterized in that: The inductor body includes a magnet and a coil, wherein the coil is wrapped inside the magnet, the assembly surface is located on the magnet, and the coil has two lead ends, which are electrically connected to the first lead electrode and the second lead electrode respectively; in the thickness direction of the magnet, the separation groove extends into the magnet and is spaced apart from the coil.

8. The inductor element according to claim 7, characterized in that: The magnet includes an insulator and a plurality of magnetic powder particles wrapped in the insulator; And / or, the thickness of the magnet is T1, the thickness of the physical vapor deposition metal layer is T2, T2 / T1=0.05% to 1.09%; and / or, in the thickness direction of the magnet, the depth of the separation groove is 30 μm to 50 μm; And / or, the thickness of the magnet is 0.5 mm to 0.7 mm.

9. A method for preparing an inductor element according to any one of claims 1 to 8, characterized in that: The following steps are involved: Shielding the non-deposition area: placing a shielding member on the assembly surface of the inductor body, in a direction parallel to the assembly surface, the shielding member is at least partially located between the two ends of the assembly surface; Physical vapor deposition: Physical vapor deposition is performed on the assembly surface in a vacuum environment to obtain the physical vapor deposition metal layer.

10. The preparation method according to claim 9, characterized in that: The inductor body further includes an end surface and a side surface, wherein the end surface is arranged opposite to the assembly surface, and the side surface is connected between the end surface and the assembly surface; In the step of shielding the non-deposition area, a plurality of the inductor bodies are placed side by side in a fixture, the end surface of each of the inductor bodies is shielded by the fixture, and the side surfaces of two adjacent inductor bodies are attached to each other and shielded.

11. An electronic device, characterized in that: The invention comprises the inductor element according to any one of claims 1 to 8, or comprises the inductor element manufactured by the manufacturing method according to claim 9 or 10.

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