Novel temperature vibration sensor and data acquisition method thereof

Abstract

The invention provides a novel temperature vibration sensor and a data acquisition method thereof.The temperature vibration sensor comprises an interface module, a first partition plate, a communication module, a second partition plate, a main control module, a third partition plate, an acquisition module and a base which are sequentially arranged, the interface module is installed on the first partition plate, and the communication module is installed on the second partition plate; the main control module is installed on one side of the third partition plate, the acquisition module is installed on the other side of the third partition plate, the acquisition module comprises a single-axis accelerometer and a three-axis accelerometer and is connected with the input end of the main control module, the output end of the main control module is connected with the communication module, and the communication module is electrically connected with the interface module. According to the temperature vibration sensor, three-layer modular design is achieved through the partition plates, mutual interference between modules can be remarkably reduced, and the heat dissipation performance of the sensor can be effectively improved. The acquisition module comprises a single-axis accelerometer and a three-axis accelerometer, data acquired by the single-axis accelerometer and the three-axis accelerometer can be mutually verified and fused, the data accuracy and reliability are improved, and comprehensive and accurate data acquisition is realized.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and more specifically, to a novel temperature vibration sensor and a data acquisition method thereof. Background Art

[0002] With the rapid development of modern industry, various types of mechanical rotating equipment play an important role in many industrial fields. However, due to the particularity and complexity of production processes and equipment operation, equipment components often face long-term overload and fatigue conditions, which not only significantly increases the frequency of equipment maintenance and replacement, but also puts pressure on the company's operating costs. Temperature vibration sensors, also known as temperature vibration sensors, can not only monitor the vibration speed, movement direction and other factors related to mechanical vibration of rotating mechanical equipment, but also measure the temperature of mechanical equipment in real time during operation. After comprehensive analysis and processing of the monitoring data, conclusions can be drawn as to whether the mechanical equipment has failed and the cause of the failure, and managers can be reminded to deal with related failures in a timely manner to maintain a safe and orderly production environment.

[0003] However, traditional vibration sensors are often unable to accurately locate the source of faults when monitoring special and complex equipment failures. This limitation not only increases the economic burden of equipment maintenance for enterprises, but also due to the low integration of traditional sensors, the installation process is complicated, costly, and difficult to construct. These factors seriously restrict the progress of enterprises in equipment safety monitoring and management. In order to meet these challenges, it is urgent to develop a more efficient, more accurate, and more integrated sensor technology to reduce maintenance costs and improve the reliability and safety of equipment operation. Summary of the invention

[0004] In view of the above problems, the purpose of the present invention is to provide a new temperature vibration sensor and its data acquisition method, which can significantly reduce the mutual interference between modules and effectively improve the heat dissipation performance of the sensor through a three-layer modular design. The data collected by the single-axis accelerometer and the three-axis accelerometer are mutually verified and fused, which improves the accuracy and reliability of the data and realizes comprehensive and accurate data acquisition.

[0005] The first aspect of the present invention provides a new type of temperature vibration sensor, comprising an interface module, a first partition, a communication module, a second partition, a main control module, a third partition, an acquisition module and a base arranged in sequence, the interface module is installed on the first partition, the communication module is installed on the second partition, the main control module is installed on one side of the third partition, the acquisition module is installed on the other side of the third partition, the acquisition module comprises a uniaxial accelerometer and a triaxial accelerometer, the output ends of the uniaxial accelerometer and the triaxial accelerometer are connected to the input end of the main control module, the output end of the main control module is connected to the communication module, and the communication module is electrically connected to the interface module.

[0006] The temperature vibration sensor realizes a three-layer modular design through the first partition, the second partition, and the third partition. The interface module, the communication module, and the main control module are respectively arranged at the top, the middle, and the bottom of the sensor, which can significantly reduce the mutual interference between modules and effectively improve the heat dissipation performance of the sensor, ensuring that the equipment can maintain stable operation and efficient data processing under various working conditions. In addition, the acquisition module of the temperature vibration sensor includes a single-axis accelerometer and a three-axis accelerometer. The data collected by the two can be mutually verified and integrated to improve data accuracy and reliability, and realize comprehensive and accurate data collection.

[0007] Furthermore, the interface module includes a shielded connector, a circuit protection unit and a network transformer unit, the input end of the network transformer unit is electrically connected to the output end of the communication module, the output end of the network transformer unit is electrically connected to the input end of the circuit protection unit, and the output end of the circuit protection unit is electrically connected to the shielded connector.

[0008] The shielded connector uses an M12 shielded connector. The M12 shielded connector is a full metal shell shielded connector. This type of connector has good durability and stability, as well as good electromagnetic shielding performance, and can effectively prevent the influence of external electromagnetic interference on signal transmission.

[0009] The circuit protection unit is mainly composed of Schottky diodes and other auxiliary devices, with reverse protection and forward conduction protection. Reverse protection can withstand high voltage without conducting under the force of reverse voltage, protecting the devices in the subsequent circuit from the impact of high voltage; forward conduction protection, when the forward voltage exceeds the threshold voltage, it will quickly conduct and allow current to pass, preventing excessive current from damaging other components in the circuit.

[0010] The network transformer unit is combined with the network transformer chip design, which can isolate the different levels between network devices, prevent different levels from being transmitted through wires and damaging the internal components of the sensor, and improve the stability and safety of the sensor. At the same time, the network transformer unit can convert and couple electromagnetic fields and convert the signal level, ensuring the accuracy, stability and safety of data transmission.

[0011] Furthermore, the base is a metal base, and the temperature vibration sensor also includes a metal shell, one end of the metal shell is cooperatively connected to the base, and the other end of the metal shell is cooperatively connected to the shielding connector.

[0012] The metal shell and metal base have good geomagnetic shielding effect.

[0013] Furthermore, a threaded connection hole is provided at the bottom of the base for connecting the temperature vibration sensor to the device to be tested.

[0014] The temperature vibration sensor adopts a metal shell and a bottom threaded connection hole design to enhance the durability and protection of the sensor, simplify the installation process and improve work efficiency.

[0015] Furthermore, the communication module is connected to the main control module and the interface module respectively by means of FPC connecting wire and pin connection. The communication module includes a two-layer PCB board, which is the second partition board. The communication module integrates an Ethernet protocol stack chip circuit and a DC-DC power supply circuit. The Ethernet protocol stack chip circuit is connected to the main control module and is responsible for connecting the temperature vibration sensor to the Ethernet or the local area network. It is arranged on the top layer of the two-layer PCB board, and the two pairs of signal lines are differential and equal in length to improve the stability of the connection; the DC-DC power supply circuit is the total power supply of the temperature vibration sensor, which delivers power to each module, and is arranged on the bottom layer of the two-layer PCB board. Thereby isolating the power ripple from interfering with the Ethernet protocol stack chip circuit. Avoiding the DC-DC power ripple and transmission signal in the communication module from destroying the initial data significantly improves the accuracy and reliability of data acquisition.

[0016] Furthermore, the main control module includes a two-layer PCB board, a single-chip microcomputer and a CMOS memory. The two-layer PCB board is the third partition board. The single-chip microcomputer is located on the top layer of the PCB circuit board. The input end of the single-chip microcomputer is connected to the output end of the single-axis accelerometer and the three-axis accelerometer. The output end of the single-chip microcomputer is connected to the communication module. The CMOS memory is located on the bottom layer of the two-layer PCB circuit board. The address line, data line and control line of the CMOS memory are connected to the single-chip microcomputer; the single-axis accelerometer and the three-axis accelerometer are also located on the bottom layer of the two-layer PCB circuit board.

[0017] The main control module of the temperature and vibration sensor has a built-in high-performance single-chip microcomputer to ensure high-frequency data processing and stable transmission, reduce data loss, and effectively improve data processing efficiency;

[0018] CMOS memory is a low-power memory whose address lines, data lines and control lines are connected to the microcontroller and are used to temporarily store and retrieve the collected data.

[0019] Furthermore, the first partition plate and the second partition plate are connected via a plurality of first pillars, the second partition plate and the third partition plate are connected via a plurality of second pillars, and the third partition plate and the base are connected via a plurality of third pillars.

[0020] The first pillar, the second pillar and the third pillar adopt a double-thread design to fix the interface module, the communication module, the main control module and the base to each other, and there is a large space between the modules to prevent the components between the modules from contacting each other and causing circuit failures. At the same time, the first pillar, the second pillar and the third pillar are all made of metal, which can effectively conduct the heat generated by the temperature vibration sensor to the metal casing, thereby improving the heat dissipation performance of the sensor.

[0021] A second aspect of the present invention provides a data acquisition method of the novel temperature vibration sensor, comprising the following steps:

[0022] The uniaxial accelerometer collects the acceleration data of the measured device in the Z-axis direction, and the acceleration data is an analog quantity; the triaxial accelerometer collects the acceleration data of the measured device in the X-axis, Y-axis and Z-axis directions, and the acceleration data is a digital quantity;

[0023] The analog quantity and the digital quantity are mutually verified and integrated.

[0024] The temperature vibration sensor adopts a multi-modal data design of digital and analog quantities, improves data accuracy and reliability through data verification and fusion, and realizes comprehensive and accurate data collection;

[0025] It should be noted that the collected data is transmitted using a level pull-up method to achieve continuous and uninterrupted data transmission, ensuring the stability and reliability of data transmission.

[0026] Furthermore, the mutual verification and fusion of the analog quantity and the digital quantity include:

[0027] Analog quantity to digital quantity verification: convert the analog quantity data collected by the single-axis accelerometer to the Z-axis into digital quantity data, and after the conversion is completed, verify it with the digital quantity data of the Z-axis collected by the three-axis accelerometer;

[0028] Digital quantity vs. analog quantity verification: Convert the digital quantity data of the Z axis collected by the three-axis accelerometer into analog quantity data, and after the conversion is completed, verify it with the analog quantity data of the Z axis collected by the single-axis chip;

[0029] Data fusion: The verified analog data and digital data are seamlessly connected through the main control module and output through the communication module and / or interface module.

[0030] Furthermore, the analog quantity to digital quantity verification includes:

[0031] The Z-axis acceleration analog a measured by the uniaxial accelerometer is converted into the following formula:

[0032] acc_z_1=(a*3.3 / 4096-c) / sen

[0033] Convert it into a digital quantity to get acc_z_1, where sen is the sensitivity of the single-axis accelerometer, sen is a constant with the unit of V / g, c is the zero offset of the single-axis accelerometer, and the default value of c is 1.65 with the unit of V. The zero position correction of the single-axis accelerometer is correlated with c, so a reference value needs to be used to adjust c to obtain the accurate zero position of the single-axis chip.

[0034] In the sensor initialization stage, the Z-axis acceleration value acc_z_3 measured by the three-axis accelerometer is used as the reference value, and the deviation is compared with acc_z_1 to obtain the deviation value gap. The formula is:

[0035] gap = acc_z_1 - acc_z_3

[0036] If gap>0.001, the zero point offset c increases by 0.0001; if gap<-0.001, the zero point offset c decreases by 0.0001. The above deviation comparison and offset calibration operations are performed repeatedly until the gap is in the range of [-0.001, 0.001] for 10 consecutive cycles (that is, the offset error is less than 0.1%), and a reliable zero point offset c can be obtained.

[0037] Compared with the prior art, the beneficial effect of the technical solution of the present invention is as follows: the present invention provides a temperature vibration sensor and a data acquisition method thereof, the temperature vibration sensor comprises an interface module, a first partition, a communication module, a second partition, a main control module, a third partition, an acquisition module and a base arranged in sequence, the interface module is installed on the first partition, the communication module is installed on the second partition, the main control module is installed on one side of the third partition, the acquisition module is installed on the other side of the third partition, the acquisition module comprises a uniaxial accelerometer and a triaxial accelerometer, the output ends of the uniaxial accelerometer and the triaxial accelerometer are connected to the input end of the main control module, the output end of the main control module is connected to the communication module, and the communication module is electrically connected to the interface module. The temperature vibration sensor of the present invention realizes a three-layer modular design through the first partition, the second partition and the third partition, the interface module, the communication module and the main control module are respectively arranged at the top, the middle and the bottom of the sensor, which can significantly reduce the mutual interference between the modules and effectively improve the heat dissipation performance of the sensor, ensuring that the equipment can maintain stable operation and efficient data processing under various working conditions. In addition, the acquisition module of the temperature and vibration sensor includes a single-axis accelerometer and a three-axis accelerometer. The data collected by the two can be verified and integrated with each other to improve data accuracy and reliability and achieve comprehensive and accurate data collection. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a schematic diagram of the appearance of the temperature vibration sensor in Example 1.

[0039] Figure 2Schematic diagram of the internal structure of the temperature vibration sensor in Example 1.

[0040] Figure 3 This is a schematic diagram of the internal structure of the temperature vibration sensor in Example 1 from another perspective.

[0041] Figure 4 This is a circuit connection diagram of the temperature vibration sensor in Example 1.

[0042] Figure 5 Waveform diagram after processing the differential signal of the signal transmission line for signal line A and signal line B

[0043] Figure 6 The waveform diagram is after the differential signal of signal transmission line A and signal line B is processed.

[0044] Figure 7 It is a waveform diagram after the signal transmission line is processed with equal length by the existing temperature vibration sensor and the temperature vibration sensor of the present invention.

[0045] Figure 8 The formula is △Vout=Vout / 8*fs 2 *L1*C2*(1-Vout / Vin) processing and the waveform processed by this formula.

[0046] Among them: 1. Interface module; 101. Shielding connector; 2. First partition; 3. Communication module; 4. Second partition; 5. Main control module; 501. Single-chip microcomputer; 6. Third partition; 7. Single-axis accelerometer; 8. Three-axis accelerometer; 9. Base; 10; Metal casing; 11. Threaded connection hole; 12. First pillar; 13. Second pillar; 14. Third pillar. DETAILED DESCRIPTION

[0047] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0048] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0049] Example 1

[0050] like Figure 1-4As shown, this embodiment provides a new type of temperature vibration sensor, including an interface module 1, a first partition 2, a communication module 3, a second partition 4, a main control module 5, a third partition 6, a collection module and a base 9 arranged in sequence, the interface module 1 is installed on the first partition 2, the communication module 3 is installed on the second partition 4, the main control module 5 is installed on one side of the third partition 6, and the collection module is installed on the other side of the third partition 6. The collection module includes a uniaxial accelerometer 7 and a triaxial accelerometer 8, the output ends of the uniaxial accelerometer 7 and the triaxial accelerometer 8 are connected to the input end of the main control module 5, the output end of the main control module 5 is connected to the communication module 3, and the communication module 3 is electrically connected to the interface module 1.

[0051] In this embodiment, the temperature vibration sensor realizes a three-layer modular design through the first partition 2, the second partition 4, and the third partition 6. The interface module 1, the communication module 3, and the main control module 5 are respectively arranged at the top, middle, and bottom of the sensor, which can significantly reduce the mutual interference between modules and effectively improve the heat dissipation performance of the sensor, ensuring that the equipment can maintain stable operation and efficient data processing under various working conditions. In addition, the acquisition module of the temperature vibration sensor includes a single-axis accelerometer 7 and a three-axis accelerometer 8. The data collected by the two can be mutually verified and integrated to improve the accuracy and reliability of the data and realize comprehensive and accurate data acquisition.

[0052] In the specific implementation process, the interface module 1 includes a shielding connector 101, a circuit protection unit and a network transformer unit. The input end of the network transformer unit is electrically connected to the output end of the communication module, the output end of the network transformer unit is electrically connected to the input end of the circuit protection unit, and the output end of the circuit protection unit is electrically connected to the shielding connector 101. The shielding connector 101, the circuit protection unit and the network transformer unit are integrated on a PCB circuit board. This design significantly improves the circuit integration and space utilization, and enhances the stability and reliability of the system. The shielding connector 101, the circuit protection unit and the network transformer unit are connected through a PCB circuit connection line, and isolation is designed on the PCB circuit board to protect the network transformer unit from interference from other circuits, while ensuring stable high-frequency transmission of data.

[0053] The shielded connector 101 adopts the M12 shielded connector. The M12 shielded connector is a full metal shell shielded connector, which is placed at the top center of the temperature vibration sensor. This type of connector has good durability and stability, as well as good electromagnetic shielding performance. It can effectively prevent the influence of external electromagnetic interference on signal transmission, and effectively improve the efficiency and stability of high-frequency data transmission.

[0054] The female head of the M12 shielded connector adopts a threaded design, which is tightly combined with the metal housing 10 through a double thread structure, thereby reducing the loose connection phenomenon that occurs when the sensor resonates, preventing contamination by external impurities, effectively ensuring the stability and sealing of the sensor, and improving the service life.

[0055] The pins of the M12 shielded connector are connected to the PCB circuit board inside the sensor to ensure the firmness of the connection. At the same time, it greatly reduces the electromagnetic interference caused by the wired connection and ensures the integrity and accuracy of high-frequency data transmission.

[0056] The circuit protection unit is mainly composed of Schottky diodes and other auxiliary devices, with reverse protection and forward conduction protection. Reverse protection can withstand high voltage without conducting under the force of reverse voltage, protecting the devices in the subsequent circuit from the impact of high voltage; forward conduction protection, when the forward voltage exceeds the threshold voltage, it will quickly conduct and allow current to pass, preventing excessive current from damaging other components in the circuit.

[0057] The network transformer unit is designed in combination with the network transformer chip. This embodiment adopts the HY601680 network transformer chip, which can isolate the different levels between network devices, prevent the unstable level from damaging the internal components of the sensor, and improve the stability and safety of the sensor. At the same time, the network transformer unit can convert and couple the electromagnetic field and convert the signal level, ensuring the accuracy, stability and safety of data transmission.

[0058] In the specific implementation process, the base 9 is a metal base, and the temperature vibration sensor also includes a metal shell 10, one end of the metal shell 10 is connected to the base 9, and the other end of the metal shell 10 is connected to the shielding connector 101. The sensor adopts a two-layer metal design, the upper layer is a metal shell, and the lower layer is a metal base, forming a two-layer sealing structure to avoid the existence of a gap between the external environment and the sensor, effectively improving the sealing of the sensor, thereby extending the service life of the sensor. The metal shell can effectively prevent external objects, dust and debris from polluting and damaging the internal circuits and parts, ensuring the normal operation of the equipment and extending the service life; the metal shell can also effectively isolate high-frequency electromagnetic waves and rays, reduce interference to internal circuits and equipment, and prevent signal confusion and data loss.

[0059] The metal shell 10 is made of high-strength, corrosion-resistant, and wear-resistant metal materials, which can withstand greater external impact and vibration, protect the precision components inside the sensor from damage, and improve the durability and reliability of the product. The metal shell 10 and the metal base have a good geomagnetic shielding effect. In addition, it can also reduce the degree of wear of the sensor during long-term use, thereby reducing the maintenance frequency of the sensor. Reduce sensor failure caused by material aging or damage, thereby reducing the maintenance frequency of the sensor and extending the service life of the sensor.

[0060] Specifically, the metal shell is made of aluminum to enhance the durability and protection performance of the sensor. At the same time, combined with the thermal conductivity of aluminum, the heat generated inside the sensor can be more effectively conducted away, reducing the operating temperature of the sensor, thereby ensuring the stability of the sensor's high-frequency applications.

[0061] In a specific implementation process, a threaded connection hole 11 is provided at the bottom of the base 9 for connecting the temperature vibration sensor to the device to be tested.

[0062] The temperature vibration sensor adopts a metal shell 10 and a bottom threaded connection hole 11 design to enhance the durability and protection of the sensor, simplify the installation process, and improve work efficiency. The bottom adopts a threaded hole connection, so that the temperature vibration sensor is closely connected to the detected device, improving the accuracy of the collected data. At the same time, the temperature vibration sensor only needs to tighten the screws to install, which greatly simplifies the installation process and improves the convenience and efficiency of installation. The connection is stable and reliable, which can prevent the device from shifting or loosening during the installation process, reducing the maintenance requirements caused by loose or damaged connections and extending the service life.

[0063] In the specific implementation process, the communication module 3 is connected to the main control module 5 and the interface module 1 respectively by means of FPC connecting wire and pin connection. The communication module 3 includes a two-layer PCB board, which is the second partition board 4. The communication module 3 integrates an Ethernet protocol stack chip circuit and a DC-DC power supply circuit. The Ethernet protocol stack chip circuit is connected to the main control module 5 and is responsible for connecting the temperature vibration sensor to the Ethernet or the local area network. It is arranged on the top layer of the two-layer PCB board, and the two pairs of signal lines are differential and equal-length designed to improve the stability of the connection; the DC-DC power supply circuit is the total power supply of the temperature vibration sensor, which delivers power to each module, and is arranged on the bottom layer of the two-layer PCB board. The Ethernet protocol stack chip circuit and the DC-DC power supply circuit are wired between different layers to reduce cross-layer interference, further reduce crosstalk and noise, and improve the stability and reliability of the circuit. And the power supply ripple is isolated from interfering with the Ethernet protocol stack chip circuit. The DC-DC power supply ripple and transmission signal in the communication module 3 are prevented from destroying the initial data, which significantly improves the accuracy and reliability of the data.

[0064] In addition, the high voltage and low voltage input ends of the Ethernet protocol stack chip in the Ethernet protocol stack chip circuit are designed with bypass filtering circuits to filter out high-frequency noise caused by voltage fluctuations of the power supply or interference from other circuit elements, so as to ensure the performance and stability of the Ethernet protocol stack chip.

[0065] In this embodiment, the communication module is designed using differential circuits and equal-length circuits.

[0066] Through differential circuit design:

[0067] Zdiff=2*Z0[1-0.48exp(-2.9s / h)]

[0068] To improve the signal's anti-interference ability and transmission reliability; where Zdiff represents differential impedance, Z0 represents uncoupled single-ended characteristic impedance, s represents the edge spacing of the traces within the differential pair, and h represents the spacing between the signal trace and the return path.

[0069] like Figure 5-6 As shown, Figure 5 The two curves are waveform diagrams of the differential signal of the signal transmission line after the signal line A and the signal line B in a pair of signal transmission lines of the existing temperature vibration sensor are processed. The existing temperature vibration sensor in the embodiment of the present invention is a temperature vibration sensor of the Wantusi Rui brand and model Z3TG. In the figure, the voltage between the signal line A and the signal line B is basically equal, resulting in a low anti-interference ability of the differential signal during transmission, making the signal more susceptible to noise and interference. Figure 6 The two curves in the figure are waveform diagrams of the signal transmission line differential signal processed by the signal line A and the signal line B in a pair of signal transmission lines of the temperature vibration sensor of the present invention. In the figure, the voltage difference between the signal line A and the signal line B is large, so that the differential signal has a higher signal-to-noise ratio, thereby improving the anti-interference ability and transmission reliability of the signal.

[0070] By equal length circuit design:

[0071] λ=v / f

[0072] To reduce the relative delay of the signal and ensure signal synchronization; where v is the propagation speed of the electromagnetic field in the PCB substrate (FR4 material), and f is the rate of the signal. The differential circuit improves the stability and reliability of high-frequency transmission of Ethernet protocol stack chip circuits and Ethernet or LAN data.

[0073] like Figure 7 As shown, Figure 7 The curve with a large amplitude change is the waveform after the existing temperature vibration sensor processes the signal transmission line in equal length. The existing equal length processing is achieved by PCB drawing software to achieve the equal length of the signal transmission line. There are certain differences in the timing of the data signal, resulting in a large difference in the delay in signal transmission. The waveform that is basically parallel to the horizontal axis in the figure is the waveform after the signal transmission line is processed in equal length using the formula λ=v / f on the basis of the equal length of the signal transmission line achieved by the PCB drawing software. Since the timing of the data signal after processing is consistent, the transmission delay is kept consistent and the relative delay of the signal is reduced, ensuring signal synchronization.

[0074] In this embodiment, the DC-DC power supply circuit adopts a local copper plating design to isolate the power ripple from interfering with the Ethernet protocol stack chip circuit. The DC-DC power supply circuit is calculated by the formula

[0075] Vout=Vfb*R1+R2 / R2

[0076] The DC-DC power supply output chip achieves the optimum working voltage; wherein, Vout is the circuit output voltage, Vfb is the circuit feedback voltage, and R1 and R2 are the output resistances of the circuit.

[0077] The DC-DC power supply circuit is calculated by the formula

[0078] L1=Vout / fs*△IL*(1-Vout / Vin)

[0079] To achieve the peak-to-peak ripple current in the inductor of about 30% of the maximum switch current limit, it can effectively avoid entering the DCM mode, reduce the output voltage fluctuation caused by load changes or input voltage fluctuations, ensure the stability of the output voltage, reduce energy loss, and improve energy efficiency; because the capacitor C2 in the voltage output circuit has a direct relationship with the output voltage ripple. Among them, L1 is the inductor of the DC-DC power supply, Vin is the circuit input voltage, fs is the switching frequency in the circuit, and △IL is the peak-to-peak inductor ripple current.

[0080] The DC-DC power supply circuit is calculated by the formula

[0081] △Vout=Vout / 8*fs 2 *L1*C2*(1-Vout / Vin)

[0082] The size of capacitor C2 is selected to reduce the output voltage ripple and reduce the interference to the high-frequency data transmission. Among them, △Vout is the output voltage ripple, and C2 is the circuit output capacitor.

[0083] like Figure 8 As shown in the figure, the curve with larger amplitude change is the one without formula △Vout=Vout / 8*fs 2 *L1*C2*(1-Vout / Vin) processed waveform, the amplitude of the waveform is large, that is, the ripple of the power supply output is large, which will cause certain interference to the data transmission; the waveform basically parallel to the horizontal axis in the figure is through the formula △Vout=Vout / 8*fs 2 *L1*C2*(1-Vout / Vin) The waveform after processing is relatively flat, that is, the ripple of the power supply output is small, thereby reducing the interference of the power supply output ripple on the data.

[0084] In the specific implementation process, the main control module 5 includes a two-layer PCB board, a single-chip microcomputer 501 and a CMOS memory. The two-layer PCB board is the third partition board 6. The single-chip microcomputer 501 is located on the top layer of the PCB circuit board. The input end of the single-chip microcomputer 501 is connected to the output end of the single-axis accelerometer 7 and the three-axis accelerometer 8. The output end of the single-chip microcomputer 501 is connected to the communication module 3. The CMOS memory is located on the bottom layer of the two-layer PCB circuit board. The address line, data line and control line of the CMOS memory are connected to the single-chip microcomputer 501; the single-axis accelerometer 7 and the three-axis accelerometer 8 are also located on the bottom layer of the two-layer PCB circuit board.

[0085] It should be noted that the single-chip microcomputer 501, the uniaxial accelerometer 7, the triaxial accelerometer 8 and the CMOS memory are integrated on the same PCB circuit board, which improves the internal space utilization of the sensor and reduces the number of connection lines and interfaces within the system, thereby optimizing the signal transmission and power distribution within the system and reducing electromagnetic interference (EMI) and noise.

[0086] In this embodiment, the high-performance triaxial accelerometer 8 forms a horizontal relationship with the detected device, ensuring that the acquisition direction of the triaxial accelerometer 8 is consistent with the direction of the detected device. The high-precision uniaxial triaxial accelerometer 8 forms a vertical relationship with the detected device, ensuring that the acquisition direction of the triaxial accelerometer 8 is consistent with the direction of the detected device.

[0087] The main control module 5 of the temperature vibration sensor has a built-in high-performance single-chip microcomputer 501 to ensure high-frequency data processing and stable transmission, reduce data loss, and effectively improve data processing efficiency; in this embodiment, the single-chip microcomputer 501 adopts the advanced I2C communication protocol to connect with the single-axis accelerometer 7 and the three-axis accelerometer 8, which can ensure the integrity and accuracy of the data during transmission. At the same time, an error detection and correction mechanism is built inside the high-performance single-chip microcomputer 501, which can monitor errors in the data transmission process in real time, and automatically correct or retransmit, effectively reducing the risk of data loss; in addition, a data buffer and queuing mechanism are designed based on the characteristics of the high-performance single-chip microcomputer 501, which can temporarily store the data to be transmitted, and perform intelligent scheduling according to the status of the transmission channel to ensure stable data transmission.

[0088] The CMOS memory is a low-power memory, and its address line, data line and control line are connected to the single-chip computer 501, which is used to temporarily store and retrieve the collected data, avoid data loss and damage caused by interruptions or errors during data transmission and processing, and ensure data integrity and security. This embodiment adopts the ADC+DMA+double buffer mechanism to achieve 10hkz signal sampling, and the double buffer area works alternately to effectively prevent data overwriting and data tampering during data caching.

[0089] In the specific implementation process, the first partition 2 and the second partition 4 are connected by a plurality of first pillars 12, the second partition 4 and the third partition 6 are connected by a plurality of second pillars 13, and the third partition 6 and the base 9 are connected by a plurality of third pillars 14.

[0090] The first pillar 12, the second pillar 13 and the third pillar 14 adopt a double-thread design to fix the interface module 1, the communication module 3, the main control module 5 and the base 9 to each other, and there is a large space between the modules to prevent the components between the modules from contacting each other and causing circuit failures. At the same time, the first pillar 12, the second pillar 13 and the third pillar 14 are all made of metal, which can effectively conduct the heat generated by the temperature vibration sensor to the metal shell 10, thereby improving the heat dissipation performance of the sensor.

[0091] Example 2

[0092] This embodiment provides a data acquisition method of the novel temperature vibration sensor described in Embodiment 1, comprising the following steps:

[0093] The uniaxial accelerometer 7 collects the acceleration data of the measured device in the Z-axis direction, and the acceleration data is an analog quantity; the triaxial accelerometer 8 collects the acceleration data of the measured device in the X-axis, Y-axis and Z-axis directions, and the acceleration data is a digital quantity;

[0094] The analog quantity and the digital quantity are mutually verified and integrated.

[0095] In this embodiment, the temperature vibration sensor adopts a multi-modal data design of digital quantity and analog quantity, improves data accuracy and reliability through data verification and fusion, and realizes comprehensive and accurate data collection;

[0096] It should be noted that the collected data is transmitted using a level pull-up method to achieve continuous and uninterrupted data transmission, ensuring the stability and reliability of data transmission.

[0097] In the specific implementation process, the mutual verification and fusion of the analog quantity and the digital quantity include:

[0098] Analog quantity to digital quantity verification: convert the analog quantity data collected by the single-axis accelerometer 7 to the Z axis into digital quantity data, and after the conversion is completed, verify it with the digital quantity data of the Z axis collected by the three-axis accelerometer 8;

[0099] Digital quantity vs. analog quantity verification: convert the digital quantity data of the Z axis collected by the three-axis accelerometer 8 into analog quantity data, and after the conversion is completed, verify it with the analog quantity data of the Z axis collected by the single-axis chip;

[0100] Data fusion: The verified analog data and digital data are seamlessly connected through the main control module 5 and output through the communication module 3 and / or the interface module 1.

[0101] In the specific implementation process, the analog quantity to digital quantity verification includes:

[0102] The Z-axis acceleration analog a measured by the uniaxial accelerometer 7 is converted into the following formula:

[0103] acc_z_1=(a*3.3 / 4096-c) / sen

[0104] Convert to digital quantity to get acc_z_1, where sen is the sensitivity of the single-axis accelerometer 7, sen is a constant, the unit is V / g, c is the zero offset of the single-axis accelerometer 7, the default value of c is 1.65, the unit is V; the zero position correction of the single-axis accelerometer 7 is correlated with c, so a reference value needs to be used to adjust c to obtain the accurate zero position of the single-axis chip;

[0105] In the sensor initialization stage, the Z-axis acceleration value acc_z_3 measured by the three-axis accelerometer 8 is used as the reference value, and the deviation is compared with acc_z_1 to obtain the deviation value gap, and the formula is:

[0106] gap = acc_z_1 - acc_z_3

[0107] If gap>0.001, the zero point offset c increases by 0.0001; if gap<-0.001, the zero point offset c decreases by 0.0001. The above deviation comparison and offset calibration operations are executed in a loop until the gap is in the interval of [-0.001, 0.001] for 10 consecutive cycles (that is, the offset error is less than 0.1%), and a reliable zero point offset c can be obtained, and then a reliable Z-axis acceleration value acc_z_1 can be obtained.

[0108] In the specific implementation process, the digital quantity to analog quantity verification includes: before powering on, taking the Z-axis acceleration accz_3 of the three-axis accelerometer as the standard, adjusting the compensation amount com_value so that the single-axis acceleration accz_1 of the temperature vibration sensor when powered on is = accz_3 ± 0.001g

[0109] 1. Determine whether the variable of the flag is equal to 0.

[0110] 2. If (flag == 0) and the Z-axis acceleration changes:

[0111] (1) If the result of subtracting accz_3 from accz_1 is greater than 0.001, it means that the Z-axis acceleration has increased.

[0112] (2) If the result of accz_1-accz_3 is less than -0.001, it means that the Z-axis acceleration has decreased (i.e., moving in the reverse direction).

[0113] 3. If none of the above conditions are met:

[0114] This means that flag is not equal to 0, or the difference between accz_1 and accz_3 is not significant enough (that is, the absolute value of the difference between them is less than 0.001). At this time, flag is set to 1 and a message "Calibration iscompleted\r\n" is printed, indicating that the calibration process is completed.

[0115] The data collection method of the temperature vibration sensor in this embodiment mutually verifies and fuses the data collected by the uniaxial accelerometer 7 and the triaxial accelerometer 8, thereby improving the accuracy and reliability of the data and achieving comprehensive and accurate data collection.

[0116] Example 3

[0117] This embodiment discloses a computer-readable storage medium, which includes a data acquisition method program for a new temperature vibration sensor. When the data acquisition method program for the new temperature vibration sensor is executed by a processor, the steps of the data acquisition method for the new temperature vibration sensor described in Example 2 are implemented.

[0118] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0119] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0120] In addition, all functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may be separately used as a unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0121] Those skilled in the art can understand that: all or part of the steps of implementing the above method embodiments can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above method embodiments; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), disks or optical disks, and other media that can store program codes.

[0122] Alternatively, if the above-mentioned integrated unit of the present invention is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present invention can be essentially or partly reflected in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROM, RAM, magnetic disks or optical disks.

Claims

1. A new type of temperature vibration sensor, characterized in that: The invention comprises an interface module (1), a first partition, a communication module (3), a second partition (4), a main control module (5), a third partition (6), a collection module and a base (9) which are arranged in sequence, wherein the interface module (1) is mounted on the first partition (2), the communication module (3) is mounted on the second partition (4), the main control module (5) is mounted on one side of the third partition (6), and the collection module is mounted on the other side of the third partition (6), and the collection module comprises a uniaxial accelerometer (7) and a triaxial accelerometer (8), the output ends of the uniaxial accelerometer (7) and the triaxial accelerometer (8) are connected to the input end of the main control module (5), the output end of the main control module (5) is connected to the communication module (3), and the communication module (3) is electrically connected to the interface module (1).

2. The novel temperature vibration sensor according to claim 1 is characterized in that: The interface module (1) comprises a shielded connector (101), a circuit protection unit and a network transformer unit, wherein the input end of the network transformer unit is electrically connected to the output end of the communication module, the output end of the network transformer unit is electrically connected to the input end of the circuit protection unit, and the output end of the circuit protection unit is electrically connected to the shielded connector (101).

3. The novel temperature vibration sensor according to claim 2 is characterized in that: The base (9) is a metal base, and the temperature vibration sensor further comprises a metal shell (10), one end of the metal shell (10) is cooperatively connected to the base (9), and the other end of the metal shell (10) is cooperatively connected to the shielding connector (101).

4. The novel temperature vibration sensor according to claim 1 is characterized in that: The bottom of the base (9) is provided with a threaded connection hole (11) for connecting the temperature vibration sensor to the device to be tested.

5. The novel temperature vibration sensor according to claim 1 is characterized in that: The communication module (3) is connected to the main control module (5) and the interface module (1) respectively by means of FPC connection lines and pin connections. The communication module (3) comprises a two-layer PCB board, which is the second partition board (4). The communication module (3) is integrated with an Ethernet protocol stack chip circuit and a DC-DC power supply circuit. The Ethernet protocol stack chip circuit is electrically connected to the main control module (5) and is responsible for connecting the temperature vibration sensor to the Ethernet or the local area network. The Ethernet protocol stack chip circuit is arranged on the top layer of the two-layer PCB board. The DC-DC power supply circuit is the main power supply of the temperature vibration sensor, which supplies power to each module and is arranged on the bottom layer of the two-layer PCB board.

6. The novel temperature vibration sensor according to claim 1 is characterized in that: The main control module (5) comprises a two-layer PCB board, a single-chip microcomputer (501) and a CMOS memory. The two-layer PCB board is a third partition board (6). The single-chip microcomputer (501) is located on the top layer of the PCB circuit board. The input end of the single-chip microcomputer (501) is connected to the output ends of the single-axis accelerometer (7) and the three-axis accelerometer (8). The output end of the single-chip microcomputer (501) is connected to the communication module (3). The CMOS memory is located on the bottom layer of the two-layer PCB circuit board. The address line, data line and control line of the CMOS memory are connected to the single-chip microcomputer (501). The single-axis accelerometer (7) and the three-axis accelerometer (8) are also located on the bottom layer of the two-layer PCB circuit board.

7. The novel temperature vibration sensor according to claim 1 is characterized in that: The first partition plate (2) and the second partition plate (4) are connected via a plurality of first pillars (12), the second partition plate (4) and the third partition plate (6) are connected via a plurality of second pillars (13), and the third partition plate (6) and the base (9) are connected via a plurality of third pillars (14).

8. A data acquisition method for the novel temperature vibration sensor according to any one of claims 1 to 7, characterized in that: The following steps are involved: The single-axis accelerometer (7) collects acceleration data of the measured device in the Z-axis direction, and the acceleration data is an analog quantity; The three-axis accelerometer (8) collects acceleration data of the measured device in the X-axis, Y-axis and Z-axis directions, and the acceleration data is a digital quantity; The analog quantity and the digital quantity are mutually verified and integrated.

9. The data acquisition method of the novel temperature vibration sensor according to claim 8 is characterized in that: The mutual verification and fusion of analog quantity and digital quantity include: Analog quantity versus digital quantity verification: converting the analog quantity data collected by the single-axis accelerometer (7) to the Z axis into digital quantity data, and after the conversion is completed, verifying it with the digital quantity data of the Z axis collected by the three-axis accelerometer (8); Digital quantity versus analog quantity verification: converting the digital quantity data of the Z axis collected by the three-axis accelerometer (8) into analog quantity data, and verifying it with the analog quantity data of the Z axis collected by the single-axis chip after the conversion is completed; Data fusion: The verified analog data and digital data are seamlessly connected through the main control module (5) and output through the communication module (3) and / or the interface module (1).

10. The data acquisition method of the novel temperature vibration sensor according to claim 9 is characterized in that: The analog quantity to digital quantity verification comprises: The Z-axis acceleration analog a measured by the uniaxial accelerometer (7) is converted into the following formula: acc_z_1=(a*3.3 / 4096-c) / sen Converted into a digital value to obtain acc_z_1, where sen is the sensitivity of the single-axis accelerometer (7), sen is a constant, the unit is V / g, c is the zero offset of the single-axis accelerometer (7), the default value of c is 1.65, the unit is V; in the sensor initialization stage, the Z-axis acceleration value acc_z_3 measured by the three-axis accelerometer (8) is used as the reference value, and the deviation is compared with acc_z_1 to obtain the deviation value gap, the formula is: gap = acc_z_1 - acc_z_3 If gap>0.001, the zero point offset c increases by 0.0001; if gap<-0.001, the zero point offset c decreases by 0.0001. The above deviation comparison and offset calibration operations are performed repeatedly until the gap is in the interval of [-0.001, 0.001] for 10 consecutive cycles, that is, the offset error is less than 0.1%, and a reliable zero point offset c can be obtained.

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