Electronic device, capacitor assembly packaging structure, capacitor structure and manufacturing method thereof

Abstract

The invention provides an electronic device, a capacitor assembly packaging structure, a capacitor structure and a manufacturing method thereof. The capacitor assembly packaging structure comprises a capacitor assembly, an insulation packaging body and an electrode assembly. The capacitor assembly comprises a plurality of capacitor structures which are stacked and electrically connected with each other. The insulating package is configured to enclose the plurality of capacitor structures. The electrode assembly includes a first electrode structure and a second electrode structure. Each capacitor structure includes a sintered silver layer, and the sintered silver layer includes 95% or more of pure silver material. The average thickness of the sintered silver layer is less than or equal to 1 [mu] m, and the resistivity of the sintered silver layer is less than the resistivity of silver colloid formed by mixing epoxy resin and silver powder, so that the equivalent series resistance of the capacitor assembly packaging structure is reduced.

Description

Technical Field

[0001] The present invention relates to a capacitor, and in particular to an electronic device using a capacitor component packaging structure, a capacitor component packaging structure, a capacitor structure and a manufacturing method thereof. Background Art

[0002] Capacitors have been widely used as basic components in consumer home appliances, computer motherboards and their peripherals, power supplies, communication products, and automobiles. Their main functions include filtering, bypassing, rectification, coupling, decoupling, phase shifting, etc., making them one of the indispensable components in electronic products. According to different materials and uses, capacitors include aluminum electrolytic capacitors, tantalum electrolytic capacitors, multilayer ceramic capacitors, film capacitors, etc. In the prior art, solid electrolytic capacitors have the advantages of small size, large capacitance, and superior frequency characteristics, and can be applied to the decoupling function of the power circuit of the central processing unit. Generally speaking, a stack of multiple capacitor units can be used to form a solid electrolytic capacitor with high capacitance. The stacked solid electrolytic capacitor in the current technology includes multiple capacitor units and a lead frame. Each capacitor unit includes an anode portion, a cathode portion and an insulating portion, and the insulating portion electrically insulates the anode portion and the cathode portion from each other. In particular, the cathode portions of the capacitor units are stacked on each other, and a conductive layer is provided between two adjacent capacitor units so that multiple capacitor units can be electrically connected to each other. However, the stacked capacitors in the prior art still have room for improvement. Summary of the invention

[0003] The problem to be solved by the present invention is to provide an electronic device, a capacitor component packaging structure, a capacitor structure and a manufacturing method thereof in view of the deficiencies in the prior art, which can be used to reduce or maintain the equivalent series resistance (ESR) of the capacitor component packaging structure.

[0004] In order to solve the above-mentioned problems, one of the technical means adopted by the present invention is to provide a capacitor component packaging structure, which includes: a capacitor component, an insulating package and an electrode component. The capacitor component includes a plurality of capacitor structures arranged in a stack and electrically connected to each other, each capacitor structure having a positive electrode portion and a negative electrode portion. The insulating package is configured to cover a plurality of capacitor structures. The electrode component includes a first electrode structure and a second electrode structure, the first electrode structure cooperates with the insulating package and is electrically connected to the positive electrode portion of the capacitor structure, and the second electrode structure cooperates with the insulating package and is electrically connected to the negative electrode portion of the capacitor structure. Wherein, each capacitor structure includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material; wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste mixed with epoxy resin and silver powder.

[0005] In order to solve the above problems, another technical means adopted by the present invention is to provide a capacitor structure, which is applied to a capacitor assembly packaging structure. The capacitor structure includes a sintered silver layer, and the sintered silver layer includes more than 95% of pure silver material; wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste mixed with epoxy resin and silver powder.

[0006] In order to solve the above-mentioned problems, another technical means adopted by the present invention is to provide an electronic device, which uses a capacitor component packaging structure, characterized in that the capacitor component packaging structure includes: a capacitor component, an insulating packaging body and an electrode component. The capacitor component includes a plurality of capacitor structures arranged in a stack and electrically connected to each other, each capacitor structure having a positive electrode portion and a negative electrode portion. The insulating packaging body is configured to cover the plurality of capacitor structures. The electrode assembly includes a first electrode structure and a second electrode structure, the first electrode structure cooperates with the insulating packaging body and is electrically connected to the positive electrode portion of the capacitor structure, and the second electrode structure cooperates with the insulating packaging body and is electrically connected to the negative electrode portion of the capacitor structure. Wherein, each capacitor structure includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material; wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste mixed with epoxy resin and silver powder.

[0007] In one feasible or preferred embodiment, the method for manufacturing a capacitor structure includes: providing a metal foil; forming an insulating surrounding layer to be disposed surroundingly on a first portion of the metal foil; forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer; forming a carbon glue layer to cover the conductive polymer layer and contact the insulating surrounding layer; forming a silver material layer to cover the carbon glue layer and contact the insulating surrounding layer; and sintering the silver material layer to form a sintered silver layer, the sintered silver layer covers the carbon glue layer and contacts the insulating surrounding layer. The silver material layer includes a surfactant, and the pure silver material and the surfactant are mixed with each other; the surfactant is an ionic surfactant or a non-ionic surfactant; the average thickness of the sintered silver layer is between 100nm and 1000nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor component packaging structure.

[0008] In one feasible or preferred embodiment, the method for manufacturing a capacitor structure includes: providing a metal foil; forming an insulating surrounding layer to be disposed surroundingly on a first portion of the metal foil; forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer; forming a silver material layer to cover the conductive polymer layer and contact the insulating surrounding layer; and sintering the silver material layer to form a sintered silver layer, wherein the sintered silver layer covers the conductive polymer layer and contacts the insulating surrounding layer. The silver material layer includes a surfactant, and the pure silver material and the surfactant are mixed with each other; the surfactant is an ionic surfactant or a non-ionic surfactant; the average thickness of the sintered silver layer is between 100nm and 1000nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor component packaging structure.

[0009] One of the beneficial effects of the present invention is that a capacitor component packaging structure provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure through the technical solutions of "the capacitor component includes a plurality of capacitor structures which are stacked and electrically connected to each other", "the insulating packaging body is configured to cover the plurality of capacitor structures", "each capacitor structure includes a sintered silver layer" and "the sintered silver layer includes more than 95% of pure silver material", so that when the average thickness of the sintered silver layer is less than or equal to 1 μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder.

[0010] One of the beneficial effects of the present invention is that a capacitor structure provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure through the technical solutions of "the capacitor structure includes a sintered silver layer" and "the sintered silver layer includes more than 95% of pure silver material", so that when the average thickness of the sintered silver layer is less than or equal to 1μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder.

[0011] One of the beneficial effects of the present invention is that the method for manufacturing a capacitor structure provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure through the technical scheme of "forming an insulating surrounding layer to be arranged surroundingly on a first part of a metal foil", "forming a conductive polymer layer to cover the first part of the metal foil and contact the insulating surrounding layer", "forming a carbon glue layer to cover the conductive polymer layer and contact the insulating surrounding layer", "forming a silver material layer to cover the carbon glue layer and contact the insulating surrounding layer" and "sintering the silver material layer to form a sintered silver layer", so that when the average thickness of the sintered silver layer is less than or equal to 1μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder.

[0012] One of the beneficial effects of the present invention is that the method for manufacturing a capacitor structure provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure through the technical scheme of "forming an insulating surrounding layer to be arranged surroundingly on a first portion of a metal foil", "forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer", "forming a silver material layer to cover the conductive polymer layer and contact the insulating surrounding layer" and "sintering the silver material layer to form a sintered silver layer", so that when the average thickness of the sintered silver layer is less than or equal to 1 μm and the resistivity of the sintered silver layer is less than the resistivity of a silver paste formed by a mixture of epoxy resin and silver powder.

[0013] One of the beneficial effects of the present invention is that an electronic device provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure through the technical solutions of "the capacitor component includes a plurality of capacitor structures which are stacked and electrically connected to each other", "the insulating package is configured to cover the plurality of capacitor structures", "each capacitor structure includes a sintered silver layer" and "the sintered silver layer includes more than 95% of pure silver material", so that when the average thickness of the sintered silver layer is less than or equal to 1 μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder.

[0014] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a flow chart of the method for manufacturing the capacitor structure provided by the first embodiment and the fifth embodiment of the present invention.

[0016] Figure 2 Schematic diagram of steps S100 to S106 of the method for manufacturing a capacitor structure provided in the first embodiment of the present invention.

[0017] Figure 3 for Figure 2 An enlarged schematic diagram of part III.

[0018] Figure 4 It is a schematic diagram of step S108 of the method for manufacturing the capacitor structure provided in the first embodiment of the present invention.

[0019] Figure 5 for Figure 4 An enlarged schematic diagram of part V.

[0020] Figure 6 It is a cross-sectional schematic diagram of a capacitor assembly packaging structure provided by a second embodiment of the present invention.

[0021] Figure 7 It is a cross-sectional schematic diagram of a capacitor assembly packaging structure provided by a third embodiment of the present invention.

[0022] Figure 8 It is a cross-sectional schematic diagram of a capacitor assembly packaging structure provided by a fourth embodiment of the present invention.

[0023] Fig. 9 It is a schematic diagram of steps S200 to S208 of a method for manufacturing a capacitor structure provided in a fifth embodiment of the present invention.

[0024] Fig.10 It is a schematic diagram of step S210 of the method for manufacturing a capacitor structure provided in the fifth embodiment of the present invention.

[0025] Fig.11 A functional block diagram of an electronic device provided in accordance with a sixth embodiment of the present invention. DETAILED DESCRIPTION

[0026] The following is an explanation of the implementation methods of the "electronic device, capacitor assembly packaging structure, capacitor structure and its manufacturing method" disclosed in the present invention through specific specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, it should be stated in advance that the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual dimensions. The following implementation methods will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0027] [First embodiment]

[0028] See also Figures 1 to 5 As shown, the first embodiment of the present invention provides a method for manufacturing a capacitor structure, which includes: first, Figure 1 and Figure 2 As shown, a metal foil 100 is provided (step S100); then, Figure 1 and Figure 2 As shown, an insulating surrounding layer 101 (or an insulating limiting layer) is formed to be disposed surroundingly on a first portion 100A of the metal foil 100 (step S102); then, Figure 1 and Figure 2 As shown, a conductive polymer layer 102 is formed to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101 (step S104); next, Figure 1 , Figure 2 and Figure 3 As shown, a silver material layer 104R (eg, a nano silver material layer) is formed to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101 (step S106); finally, Figure 1 , Figure 2 , Figure 4 and Figure 5 As shown, Figure 2The silver material layer 104R is sintered to form a sintered silver layer 104 (step S108), and the sintered silver layer 104 covers the conductive polymer layer 102 and contacts the insulating surrounding layer 101. For example, the metal foil 100 can be an aluminum foil, a copper foil or any kind of conductive foil, and the surface of the metal foil 100 has a corrosion layer and an oxide layer formed on the corrosion layer. In addition, the insulating surrounding layer 101 can be silicone, epoxy or any kind of insulating material. In addition, the conductive polymer layer 102 can be polyacetylene (PA), polypyrrole (PPy), polythiophene (PT), polyaniline (PANI), poly (p-phenylene) (PPP), poly (phenylene vinylene) (PPV), or the conductive polymer layer 102 can be polyphenylene sulfide, polypyrrole, polythiophene, polyphenyl, polythiazole, etc. However, the above example is only one of the feasible embodiments and is not used to limit the present invention.

[0029] It is worth noting that, for example, Figure 3 As shown, the silver material layer 104R may include a surfactant 1040 (surfactant), and the pure silver material 1041 (e.g., a plurality of pure nano silver particles) and the surfactant 1040 may be mixed with each other to form a nano silver paste. In addition, in the step S106 of sintering the silver material layer 104R to form the sintered silver layer 104, the surfactant 1040 of the silver material layer 104R may be completely removed to leave only a plurality of pure silver materials 1041, or most of the surfactant 1040 of the silver material layer 104R may be removed to leave more than 95% of the plurality of pure silver materials 1041 (that is, the pure silver material 1041 accounts for more than 95% of the weight percentage or volume percentage of the sintered silver layer 104, and the remaining components may have a small amount of surfactant or C, H, O and other residues). In addition, the surfactant 1040 may be an ionic surfactant or a non-ionic surfactant. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0030] In this way, cooperate Figure 4 and Figure 5As shown, a capacitor structure 10 (or capacitor element) manufactured by a method for manufacturing a capacitor structure provided by the first embodiment of the present invention includes a metal foil 100, an insulating surrounding layer 101, a conductive polymer layer 102, and a sintered silver layer 104. More specifically, the capacitor structure 10 has a positive electrode portion P and a negative electrode portion N. The insulating surrounding layer 101 is configured to be disposed surroundingly on a first portion 100A of the metal foil 100, but does not contact a second portion 100B of the metal foil 100 through the barrier of the insulating surrounding layer 101. The conductive polymer layer 102 is configured to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, but does not contact the second portion 100B of the metal foil 100 through the barrier of the insulating surrounding layer 101. The sintered silver layer 104 is configured to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101, but will not contact the second portion 100B of the metal foil 100 due to the barrier of the insulating surrounding layer 101. It is worth noting that the sintered silver layer 104 includes more than 95% of pure silver material (for example, composed of nano silver material or multiple pure silver materials 1041), so the sintered silver layer 104 can also be called a sintered nano silver layer (silver layer) or a sintered nano silver film (silverthin film). In addition, the average thickness of the sintered silver layer 104 can be less than or equal to 1μm (or any positive integer less than or equal to 1μm) (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of multiple capacitor structures 10 can be increased), and the resistivity of the sintered silver layer 104 can be less than the resistivity of the silver paste mixed with epoxy resin and silver powder (that is, the non-sintered silver paste). For example, since the average thickness of the sintered silver layer 104 is between 100 nm and 1000 nm (or any positive integer between 100 nm and 1000 nm), and the resistivity of the sintered silver layer 104 is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm (or between R×10 -5 Ω·cm and R×10 -6Ω·cm, where R can be any number), so the present invention can effectively reduce the equivalent series resistance of the capacitor component packaging structure S through the sintered silver layer 104, or maintain the equivalent series resistance of the capacitor component packaging structure S. Therefore, even if the average thickness of the sintered silver layer 104 is reduced, the equivalent series resistance of the capacitor component packaging structure S will not increase (that is, even if the average thickness of the sintered silver layer 104 is reduced, the equivalent series resistance of the capacitor component packaging structure S "using the sintered silver layer 104" can be maintained the same as the equivalent series resistance of the capacitor component packaging structure "using the silver paste mixed with epoxy resin and silver powder").

[0031] [Second embodiment]

[0032] See also Figure 6 As shown, the first embodiment of the present invention provides a capacitor assembly packaging structure S, which includes a capacitor assembly 1, an insulating packaging body 2 and an electrode assembly 3. That is, the plurality of capacitor structures 10 manufactured by the manufacturing method of a capacitor structure provided by the first embodiment of the present invention can be applied to a capacitor assembly packaging structure S.

[0033] First, cooperate Figure 4 and Figure 6 As shown, the capacitor assembly 1 includes a plurality of capacitor structures 10 stacked and electrically connected to each other, each capacitor structure 10 having a positive electrode portion P and a negative electrode portion N, and each capacitor structure 10 includes a metal foil 100, an insulating surrounding layer 101, a conductive polymer layer 102 and a sintered silver layer 104. More specifically, as Figure 4 As shown, the insulating surrounding layer 101 is configured to be disposed circumferentially on a first portion 100A of the metal foil 100, the conductive polymer layer 102 is configured to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, and the sintered silver layer 104 is configured to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101. In addition, the sintered silver layer 104 is the outermost layer of the capacitor structure 10, and the two sintered silver layers 104 of two adjacent capacitor structures 10 can be electrically connected to each other through a conductive material M (or no conductive material is required). In addition, a second portion 100B of the metal foil 100 of each capacitor structure 10 is not covered by the insulating surrounding layer 101, and multiple second portions 100B of multiple metal foils 100 of multiple capacitor structures 10 can be stacked. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0034] In addition, if Figure 6As shown, the insulating package 2 is configured to encapsulate a plurality of capacitor structures 10. For example, the insulating package 2 can be silicone, epoxy or any other insulating material. However, the above example is only one possible embodiment and is not intended to limit the present invention.

[0035] Furthermore, if Figure 6 As shown, the electrode assembly 3 includes a first electrode structure 31 and a second electrode structure 32. The first electrode structure 31 cooperates with the insulating package 2 and is electrically connected to the positive electrode portion P of the capacitor structure 10, the second electrode structure 32 cooperates with the insulating package 2 and is electrically connected to the negative electrode portion N of the capacitor structure 10, and the electrode assembly 3 can be a conductive lead frame assembly. Further, when the electrode assembly 3 is a conductive lead frame assembly, the first electrode structure 31 of the electrode assembly 3 includes a first embedded portion 311 covered by the insulating package 2 and a first exposed portion 312 connected to the first embedded portion 311 and exposed outside the insulating package 2, the first embedded portion 311 of the first electrode structure 31 (may be through a conductive material) is electrically connected to the positive electrode portion P of the capacitor structure 10, and the first exposed portion 312 of the first electrode structure 31 extends along the outer surface of the insulating package 2. In addition, when the electrode assembly 3 is a conductive pin assembly, the second electrode structure 32 of the electrode assembly 3 includes a second embedded portion 321 covered by the insulating package 2 and a second exposed portion 322 connected to the second embedded portion 321 and exposed outside the insulating package 2. The second embedded portion 321 of the second electrode structure 32 is electrically connected to the negative electrode portion N of the capacitor structure 10 (via a conductive material), and the second exposed portion 322 of the second electrode structure 32 extends along the outer surface of the insulating package 2.

[0036] [Third embodiment]

[0037] See also Figure 7 As shown, the third embodiment of the present invention provides a capacitor assembly packaging structure S, which includes a capacitor assembly 1, an insulating packaging body 2 and an electrode assembly 3. Figure 7 and Figure 6It can be seen from the comparison that the main difference between the third embodiment of the present invention and the second embodiment is that in the third embodiment, the electrode assembly 3 can be a lateral terminal assembly, and the second portions 100B of the metal foils 100 of the capacitor structures 10 are separated from each other. More specifically, when the electrode assembly 3 is a lateral terminal assembly, the first electrode structure 31 of the electrode assembly 3 includes a first internal conductive layer 313 configured to cover a first lateral end portion 21P of the insulating package 2 and electrically connected to the positive electrode portion P of the capacitor structure 10, a first intermediate conductive layer 314 configured to cover the first internal conductive layer 313, and a first external conductive layer 315 configured to cover the first intermediate conductive layer 314. In addition, when the electrode assembly 3 is a side electrode assembly, the second electrode structure 32 of the electrode assembly 3 includes a second internal conductive layer 323 configured to cover a second side end portion 22P of the insulating package 2 and electrically connected to the negative electrode portion N of the capacitor structure 10, a second intermediate conductive layer 324 configured to cover the second internal conductive layer 323, and a second external conductive layer 325 configured to cover the second intermediate conductive layer 324. For example, the first internal conductive layer 313 may be one of an Ag layer and a Cu layer, the first intermediate conductive layer 314 may be a Ni layer, and the first external conductive layer 315 may be a Sn layer. The second internal conductive layer 323 may be one of an Ag layer and a Cu layer, the second intermediate conductive layer 324 may be a Ni layer, and the second external conductive layer 325 may be a Sn layer. However, the above example is only one of the feasible embodiments and is not intended to limit the present invention.

[0038] [Fourth embodiment]

[0039] See also Figure 8 As shown, the fourth embodiment of the present invention provides a capacitor assembly packaging structure S, which includes a capacitor assembly 1, an insulating packaging body 2 and an electrode assembly 3. Figure 8 and Figure 7 From the comparison, it can be seen that the main difference between the fourth embodiment of the present invention and the third embodiment is that: in the fourth embodiment, when the electrode assembly 3 can be a side-end electrode assembly, multiple capacitor structures 10 can be supported by a conductive supporting substrate 33, and the negative electrode portion N of the capacitor structure 10 can be electrically connected to the second electrode structure 32 of the electrode assembly 3 through the conductive supporting substrate 33.

[0040] [Fifth embodiment]

[0041] See also Figure 1 , Fig. 9 and Fig.10As shown, the fifth embodiment of the present invention provides a method for manufacturing a capacitor structure, which includes: first, Figure 1 and Fig. 9 As shown, a metal foil 100 is provided (step S200); then, Figure 1 and Fig. 9 As shown, an insulating surrounding layer 101 is formed to be disposed surroundingly on a first portion 100A of the metal foil 100 (step S202); then, Figure 1 and Fig. 9 As shown, a conductive polymer layer 102 is formed to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101 (step S204); next, Figure 1 and Fig. 9 As shown, a carbon glue layer 103 is formed to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101 (step S206); then, Figure 1 and Fig. 9 As shown, a silver material layer 104R is formed to cover the carbon glue layer 103 and contact the insulating surrounding layer 101 (step S208); finally, Figure 1 , Fig. 9 and Fig.10 As shown, Fig. 9 The silver material layer 104R is sintered to form a sintered silver layer 104 (step S210), and the sintered silver layer 104 covers the carbon glue layer 103 and contacts the insulating surrounding layer 101. For example, the metal foil 100 can be an aluminum foil, a copper foil or any kind of conductive foil, and the surface of the metal foil 100 has a corrosion layer and an oxide layer formed on the corrosion layer. In addition, the insulating surrounding layer 101 can be silicone, epoxy or any kind of insulating material. In addition, the conductive polymer layer 102 can be polyacetylene (PA), polypyrrole (PPy), polythiophene (PT), polyaniline (PANI), poly (p-phenylene) (PPP), poly (phenylene vinylene) (PPV), or the conductive polymer layer 102 can be polyphenylene sulfide, polypyrrole, polythiophene, polyphenyl, polythiazole, etc. However, the above example is only one of the feasible embodiments and is not used to limit the present invention.

[0042] It is worth noting that, for example, Figure 3As shown, similar to the first embodiment, the silver material layer 104R may include a surfactant 1040 (surfactant), and the pure silver material 1041 (e.g., a plurality of pure nano silver particles) and the surfactant 1040 may be mixed with each other to form a nano silver paste. In addition, in the step S210 of sintering the silver material layer 104R to form the sintered silver layer 104, the surfactant 1040 of the silver material layer 104R may be completely removed to leave only a plurality of pure silver materials 1041, or most of the surfactant 1040 of the silver material layer 104R may be removed to leave more than 95% of the plurality of pure silver materials 1041 (that is, the pure silver material 1041 accounts for more than 95% of the weight percentage or volume percentage of the sintered silver layer 104, and the remaining components may have a small amount of surfactant or C, H, O and other residues). In addition, the surfactant 1040 can be an ionic surfactant or a non-ionic surfactant. However, the above example is only a feasible embodiment and is not intended to limit the present invention.

[0043] By this, Fig.10 As shown, a capacitor structure 10 manufactured by a method for manufacturing a capacitor structure provided by the fifth embodiment of the present invention includes a metal foil 100, an insulating surrounding layer 101, a conductive polymer layer 102, a carbon glue layer 103 and a sintered silver layer 104. More specifically, the capacitor structure 10 has a positive electrode portion P and a negative electrode portion N. The insulating surrounding layer 101 is configured to be disposed surroundingly on a first portion 100A of the metal foil 100, but does not contact a second portion 100B of the metal foil 100 through the barrier of the insulating surrounding layer 101. The conductive polymer layer 102 is configured to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, but does not contact the second portion 100B of the metal foil 100 through the barrier of the insulating surrounding layer 101. The carbon glue layer 103 is configured to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101, but does not contact the second portion 100B of the metal foil 100 through the barrier of the insulating surrounding layer 101. The sintered silver layer 104 is configured to cover the carbon glue layer 103 and contact the insulating surrounding layer 101, but does not contact the second portion 100B of the metal foil 100 through the barrier of the insulating surrounding layer 101. It is worth noting that Figure 3As shown, more than 95% of the material of the sintered silver layer 104 is composed of a plurality of pure silver materials 1041. In addition, the average thickness of the sintered silver layer 104 can be less than or equal to 1 μm, and the resistivity of the sintered silver layer 104 can be less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder (i.e., the silver paste formed by non-sintering). For example, since the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of the plurality of capacitor structures 10 can be increased), and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder (i.e., the silver paste formed by non-sintering), the present invention can effectively reduce the equivalent series resistance of the capacitor component packaging structure S through the sintered silver layer 104.

[0044] [Sixth embodiment]

[0045] See also Fig.11 As shown, the sixth embodiment of the present invention provides an electronic device E, and the electronic device E uses any capacitor component packaging structure S as in the second embodiment to the fourth embodiment. For example, the electronic device E can be a portable electronic device (such as a desktop computer, a laptop computer, or a tablet computer) or a mobile device (such as a vehicle, a ship, an airplane, or any other means of transportation). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0046] [Beneficial Effects of Embodiments]

[0047] One of the beneficial effects of the present invention is that a capacitor component packaging structure S provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure S through the technical solutions of "the capacitor component 1 includes a plurality of capacitor structures 10 stacked and electrically connected to each other", "the insulating packaging body 2 is configured to cover the plurality of capacitor structures 10", "each capacitor structure 10 includes a sintered silver layer 104" and "more than 95% of the material of the sintered silver layer 104 is composed of a plurality of pure silver materials 1041", so that when the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of the plurality of capacitor structures 10 can be increased) and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder (that is, the non-sintered silver paste).

[0048] One of the beneficial effects of the present invention is that the capacitor structure 10 provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure S through the technical solutions of "the capacitor structure 10 includes a sintered silver layer 104" and "more than 95% of the material of the sintered silver layer 104 is composed of multiple pure silver materials 1041", so that when the average thickness of the sintered silver layer 104 is less than or equal to 1μm (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of multiple capacitor structures 10 can be increased) and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste mixed with epoxy resin and silver powder (that is, non-sintered silver paste).

[0049] One of the beneficial effects of the present invention is that the method for manufacturing a capacitor structure 10 provided by the present invention can be achieved by "forming an insulating surrounding layer 101 to be disposed surroundingly on a first portion 100A of a metal foil 100", "forming a conductive polymer layer 102 to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101", "forming a carbon glue layer 103 to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101", and "forming a silver material layer to cover the carbon glue layer 103 and contact the insulating surrounding layer 101". 1” and the technical scheme of “sintering the silver material layer to form a sintered silver layer 104”, so that when the average thickness of the sintered silver layer 104 is less than or equal to 1μm (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of multiple capacitor structures 10 can be increased) and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder (that is, the non-sintered silver paste), it can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure S.

[0050] One of the beneficial effects of the present invention is that the manufacturing method of a capacitor structure 10 provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure S by the technical scheme of "forming an insulating surrounding layer 101 to be disposed surroundingly on a first portion 100A of the metal foil 100", "forming a conductive polymer layer 102 to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101", "forming a silver material layer to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101", and "sintering the silver material layer to form a sintered silver layer 104", so that when the average thickness of the sintered silver layer 104 is less than or equal to 1μm (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of multiple capacitor structures 10 can be increased) and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder (that is, the non-sintered silver paste).

[0051] One of the beneficial effects of the present invention is that an electronic device provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor component packaging structure S through the technical solutions of "the capacitor component 1 includes a plurality of capacitor structures 10 stacked and electrically connected to each other", "the insulating package 2 is configured to cover the plurality of capacitor structures 10", "each capacitor structure 10 includes a sintered silver layer 104" and "more than 95% of the material of the sintered silver layer 104 is composed of a plurality of pure silver materials 1041", so that when the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor component packaging structure S can be reduced, and the number of stacked layers of the plurality of capacitor structures 10 can be increased) and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder (that is, the non-sintered silver paste).

[0052] The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention description and drawings are included in the protection scope of the claims of the present invention.

Claims

1. A capacitor assembly packaging structure, characterized in that: The capacitor assembly packaging structure comprises: A capacitor assembly, the capacitor assembly comprising a plurality of capacitor structures stacked and electrically connected to each other, each of the capacitor structures having a positive electrode portion and a negative electrode portion; an insulating package body, the insulating package body being configured to enclose a plurality of the capacitor structures; and an electrode assembly, the electrode assembly comprising a first electrode structure and a second electrode structure, the first electrode structure cooperates with the insulating package and is electrically connected to the positive electrode portion of the capacitor structure, the second electrode structure cooperates with the insulating package and is electrically connected to the negative electrode portion of the capacitor structure; Each of the capacitor structures includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material.

2. The capacitor assembly packaging structure according to claim 1, characterized in that: in, Each of the capacitor structures comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, a conductive polymer layer for covering the first portion of the metal foil and contacting the insulating surrounding layer, and a carbon glue layer for covering the conductive polymer layer and contacting the insulating surrounding layer, and the sintered silver layer is configured to cover the carbon glue layer and contact the insulating surrounding layer; Wherein, the sintered silver layer is the outermost layer of the capacitor structure, and the two sintered silver layers of two adjacent capacitor structures are electrically connected to each other through a conductive material; A second portion of the metal foil of each capacitor structure is not covered by the insulating surrounding layer, and a plurality of the second portions of a plurality of the metal foils of a plurality of the capacitor structures are stacked or separated from each other; Wherein, the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder; The average thickness of the sintered silver layer is between 100 nm and 1000 nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor assembly packaging structure; Wherein, the electrode assembly is a conductive pin assembly or a side end electrode assembly; Wherein, when the electrode assembly is the conductive pin assembly, the first electrode structure of the electrode assembly includes a first embedded portion covered by the insulating package and a first exposed portion connected to the first embedded portion and exposed outside the insulating package, the first embedded portion of the first electrode structure is electrically connected to the positive electrode portion of the capacitor structure, and the first exposed portion of the first electrode structure extends along the outer surface of the insulating package; Wherein, when the electrode assembly is the conductive pin assembly, the second electrode structure of the electrode assembly includes a second embedded portion covered by the insulating package and a second exposed portion connected to the second embedded portion and exposed outside the insulating package, the second embedded portion of the second electrode structure is electrically connected to the negative electrode portion of the capacitor structure, and the second exposed portion of the second electrode structure extends along the outer surface of the insulating package; Wherein, when the electrode assembly is the side end electrode assembly, the first electrode structure of the electrode assembly includes a first internal conductive layer configured to cover a first side end of the insulating package and electrically connected to the positive electrode portion of the capacitor structure, a first intermediate conductive layer configured to cover the first internal conductive layer, and a first external conductive layer configured to cover the first intermediate conductive layer, the first internal conductive layer is one of an Ag layer and a Cu layer, the first intermediate conductive layer is a Ni layer, and the first external conductive layer is a Sn layer; Wherein, when the electrode assembly is the side end electrode assembly, the second electrode structure of the electrode assembly includes a second inner conductive layer configured to cover a second side end of the insulating package and electrically connected to the negative electrode portion of the capacitor structure, a second middle conductive layer configured to cover the second inner conductive layer, and a second outer conductive layer configured to cover the second middle conductive layer, the second inner conductive layer is one of an Ag layer and a Cu layer, the second middle conductive layer is a Ni layer, and the second outer conductive layer is a Sn layer; Wherein, when the electrode assembly is the side electrode assembly, the plurality of capacitor structures are supported by a conductive supporting substrate, and the negative electrode portion of the capacitor structure is electrically connected to the second electrode structure of the electrode assembly through the conductive supporting substrate.

3. The capacitor assembly packaging structure according to claim 1, characterized in that: in, Each of the capacitor structures comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, and a conductive polymer layer for covering the first portion of the metal foil and contacting the insulating surrounding layer, and the sintered silver layer is configured to cover the conductive polymer layer and contact the insulating surrounding layer; Wherein, the sintered silver layer is the outermost layer of the capacitor structure, and the two sintered silver layers of two adjacent capacitor structures are electrically connected to each other through a conductive material; A second portion of the metal foil of each capacitor structure is not covered by the insulating surrounding layer, and a plurality of the second portions of a plurality of the metal foils of a plurality of the capacitor structures are stacked or separated from each other; Wherein, the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder; The average thickness of the sintered silver layer is between 100 nm and 1000 nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor assembly packaging structure; Wherein, the electrode assembly is a conductive pin assembly or a side end electrode assembly; Wherein, when the electrode assembly is the conductive pin assembly, the first electrode structure of the electrode assembly includes a first embedded portion covered by the insulating package and a first exposed portion connected to the first embedded portion and exposed outside the insulating package, the first embedded portion of the first electrode structure is electrically connected to the positive electrode portion of the capacitor structure, and the first exposed portion of the first electrode structure extends along the outer surface of the insulating package; Wherein, when the electrode assembly is the conductive pin assembly, the second electrode structure of the electrode assembly includes a second embedded portion covered by the insulating package and a second exposed portion connected to the second embedded portion and exposed outside the insulating package, the second embedded portion of the second electrode structure is electrically connected to the negative electrode portion of the capacitor structure, and the second exposed portion of the second electrode structure extends along the outer surface of the insulating package; Wherein, when the electrode assembly is the side end electrode assembly, the first electrode structure of the electrode assembly includes a first internal conductive layer configured to cover a first side end of the insulating package and electrically connected to the positive electrode portion of the capacitor structure, a first intermediate conductive layer configured to cover the first internal conductive layer, and a first external conductive layer configured to cover the first intermediate conductive layer, the first internal conductive layer is one of an Ag layer and a Cu layer, the first intermediate conductive layer is a Ni layer, and the first external conductive layer is a Sn layer; Wherein, when the electrode assembly is the side end electrode assembly, the second electrode structure of the electrode assembly includes a second inner conductive layer configured to cover a second side end of the insulating package and electrically connected to the negative electrode portion of the capacitor structure, a second middle conductive layer configured to cover the second inner conductive layer, and a second outer conductive layer configured to cover the second middle conductive layer, the second inner conductive layer is one of an Ag layer and a Cu layer, the second middle conductive layer is a Ni layer, and the second outer conductive layer is a Sn layer; Wherein, when the electrode assembly is the side electrode assembly, the plurality of capacitor structures are supported by a conductive supporting substrate, and the negative electrode portion of the capacitor structure is electrically connected to the second electrode structure of the electrode assembly through the conductive supporting substrate.

4. A capacitor structure, the capacitor structure being applied to a capacitor assembly packaging structure, characterized in that: The capacitor structure includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material.

5. The capacitor structure according to claim 4, characterized in that: in, The capacitor structure includes a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, a conductive polymer layer for covering the first portion of the metal foil and contacting the insulating surrounding layer, and a carbon glue layer for covering the conductive polymer layer and contacting the insulating surrounding layer, and the sintered silver layer is configured to cover the carbon glue layer and contact the insulating surrounding layer; Wherein, the sintered silver layer is the outermost layer of the capacitor structure; A second portion of the metal foil of the capacitor structure is not covered by the insulating surrounding layer.

6. The capacitor structure according to claim 4, characterized in that: in, The capacitor structure includes a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, and a conductive polymer layer for covering the first portion of the metal foil and contacting the insulating surrounding layer, and the sintered silver layer is configured to cover the conductive polymer layer and contact the insulating surrounding layer; Wherein, the sintered silver layer is the outermost layer of the capacitor structure; A second portion of the metal foil of the capacitor structure is not covered by the insulating surrounding layer.

7. A method for manufacturing a capacitor structure according to claim 4, characterized in that: The method for manufacturing the capacitor structure comprises: providing a metal foil; forming an insulating surrounding layer to be disposed surroundingly on a first portion of the metal foil; forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer; forming a carbon glue layer to cover the conductive polymer layer and contact the insulating surrounding layer; forming a silver material layer to cover the carbon glue layer and contact the insulating surrounding layer; and Sintering the silver material layer to form a sintered silver layer, wherein the sintered silver layer covers the carbon glue layer and contacts the insulating surrounding layer; Wherein, the silver material layer includes a surfactant, and the pure silver material and the surfactant are mixed with each other; Wherein, the surfactant is an ionic surfactant or a non-ionic surfactant; Wherein, the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder; The average thickness of the sintered silver layer is between 100 nm and 1000 nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor component packaging structure.

8. A method for manufacturing a capacitor structure according to claim 4, characterized in that: The method for manufacturing the capacitor structure comprises: providing a metal foil; forming an insulating surrounding layer to be disposed surroundingly on a first portion of the metal foil; forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer; forming a silver material layer to cover the conductive polymer layer and contact the insulating surrounding layer; and Sintering the silver material layer to form a sintered silver layer, wherein the sintered silver layer covers the conductive polymer layer and contacts the insulating surrounding layer; Wherein, the silver material layer includes a surfactant, and the pure silver material and the surfactant are mixed with each other; Wherein, the surfactant is an ionic surfactant or a non-ionic surfactant; Wherein, the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder; The average thickness of the sintered silver layer is between 100 nm and 1000 nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor component packaging structure.

9. An electronic device, wherein the electronic device uses a capacitor assembly packaging structure, characterized in that: The capacitor assembly packaging structure comprises: A capacitor assembly, the capacitor assembly comprising a plurality of capacitor structures stacked and electrically connected to each other, each of the capacitor structures having a positive electrode portion and a negative electrode portion; an insulating package body, the insulating package body being configured to enclose a plurality of the capacitor structures; and an electrode assembly, the electrode assembly comprising a first electrode structure and a second electrode structure, the first electrode structure cooperates with the insulating package and is electrically connected to the positive electrode portion of the capacitor structure, the second electrode structure cooperates with the insulating package and is electrically connected to the negative electrode portion of the capacitor structure; Each of the capacitor structures includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material.

10. The electronic device according to claim 9, characterized in that: in, Each of the capacitor structures comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, and a conductive polymer layer for covering the first portion of the metal foil and contacting the insulating surrounding layer, and the sintered silver layer is configured to cover the conductive polymer layer and contact the insulating surrounding layer; Wherein, the sintered silver layer is the outermost layer of the capacitor structure, and the two sintered silver layers of two adjacent capacitor structures are electrically connected to each other through a conductive material; A second portion of the metal foil of each capacitor structure is not covered by the insulating surrounding layer, and a plurality of the second portions of a plurality of the metal foils of a plurality of the capacitor structures are stacked or separated from each other; Wherein, the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing epoxy resin and silver powder; The average thickness of the sintered silver layer is between 100 nm and 1000 nm, and the resistivity of the sintered silver layer is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm, so as to reduce or maintain the equivalent series resistance of the capacitor assembly packaging structure; Wherein, the electrode assembly is a conductive pin assembly or a side end electrode assembly; Wherein, when the electrode assembly is the conductive pin assembly, the first electrode structure of the electrode assembly includes a first embedded portion covered by the insulating package and a first exposed portion connected to the first embedded portion and exposed outside the insulating package, the first embedded portion of the first electrode structure is electrically connected to the positive electrode portion of the capacitor structure, and the first exposed portion of the first electrode structure extends along the outer surface of the insulating package; Wherein, when the electrode assembly is the conductive pin assembly, the second electrode structure of the electrode assembly includes a second embedded portion covered by the insulating package and a second exposed portion connected to the second embedded portion and exposed outside the insulating package, the second embedded portion of the second electrode structure is electrically connected to the negative electrode portion of the capacitor structure, and the second exposed portion of the second electrode structure extends along the outer surface of the insulating package; Wherein, when the electrode assembly is the side end electrode assembly, the first electrode structure of the electrode assembly includes a first internal conductive layer configured to cover a first side end of the insulating package and electrically connected to the positive electrode portion of the capacitor structure, a first intermediate conductive layer configured to cover the first internal conductive layer, and a first external conductive layer configured to cover the first intermediate conductive layer, the first internal conductive layer is one of an Ag layer and a Cu layer, the first intermediate conductive layer is a Ni layer, and the first external conductive layer is a Sn layer; Wherein, when the electrode assembly is the side end electrode assembly, the second electrode structure of the electrode assembly includes a second inner conductive layer configured to cover a second side end of the insulating package and electrically connected to the negative electrode portion of the capacitor structure, a second middle conductive layer configured to cover the second inner conductive layer, and a second outer conductive layer configured to cover the second middle conductive layer, the second inner conductive layer is one of an Ag layer and a Cu layer, the second middle conductive layer is a Ni layer, and the second outer conductive layer is a Sn layer; Wherein, when the electrode assembly is the side electrode assembly, the plurality of capacitor structures are supported by a conductive supporting substrate, and the negative electrode portion of the capacitor structure is electrically connected to the second electrode structure of the electrode assembly through the conductive supporting substrate.

Images