Capacitor element

Abstract

A capacitor element (1) is provided with: a capacitor section (10) that includes an anode plate (11) having a porous section (11B) on at least one main surface of a core section (11A), a dielectric layer (13) provided on the surface of the porous section (11B), and a cathode layer (12) provided on the surface of the dielectric layer (13); a sealing layer (20) provided so as to cover the capacitor part (10); a first via hole conductor (41) which is provided so as to penetrate the capacitor section (10) and the sealing layer (20) in the thickness direction so as to be directly electrically connected to the anode plate (11), and which has both ends drawn out to the surface of the sealing layer (20); a second via-hole conductor (42) which is provided so as to penetrate the capacitor section (10) and the sealing layer (20) in the thickness direction so as to be directly electrically connected to the cathode layer (12), and which has both ends drawn out to the surface of the sealing layer (20); a first external electrode layer (31) provided on the surface of the sealing layer (20) so as to be electrically connected to the first via conductor (41); and a second external electrode layer (32) provided on the surface of the sealing layer (20) so as to be electrically connected to the second via conductor (42), at least a portion of the first external electrode layer (31) overlapping the cathode layer (12) in the thickness direction.

Description

Technical Field

[0001] The present invention relates to capacitor elements. Background Art

[0002] Patent document 1 describes a solid electrolytic capacitor, which includes: a foil-shaped anode, which has a porous portion on at least one side and a through hole formed at a predetermined position; a dielectric coating formed on the porous portion of the anode; an insulating layer having an opening formed in the dielectric coating; a solid electrolyte layer formed in the dielectric coating of the opening of the insulating layer; a cathode formed in at least a portion of the solid electrolyte layer and arranged approximately parallel to the anode; an electrode formed in the insulating layer; and a through-hole electrode that penetrates the insulating layer and the anode to electrically connect the electrode to the anode and / or penetrates the insulating layer and the cathode to electrically connect the electrode to the cathode, at least one of the through-hole electrodes being in the shape of a long hole.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-281111 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In recent years, with the miniaturization and high output of electronic devices, high density of components is required. Therefore, studies have been conducted to bury capacitor elements in substrates directly below the power supply, such as GPU (Graphical Processing Unit) substrates. Large currents flow in this application, but the heat dissipation is insufficient in the structure of previous capacitor elements, and there is a possibility of heat generation due to the internal resistance of the capacitor elements. Such heat generation from various components may have an adverse effect on the safety, reliability, performance, life, etc. of electronic equipment.

[0008] The solid electrolytic capacitor described in Patent Document 1 also has room for improvement in terms of improving heat dissipation properties.

[0009] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a capacitor element capable of improving heat dissipation.

[0010] Solutions for solving problems

[0011] The capacitor element of the present invention comprises: a capacitor portion including an anode plate, a dielectric layer and a cathode layer, the anode plate having a porous portion on at least one main surface of a core portion, the dielectric layer being provided on a surface of the porous portion, and the cathode layer being provided on a surface of the dielectric layer; a sealing layer being provided to cover the capacitor portion; a first through-hole conductor being provided to penetrate the capacitor portion and the sealing layer in a thickness direction in a manner directly electrically connected to the anode plate, and both ends of the first through-hole conductor being led out to a surface of the sealing layer; a second through-hole conductor being provided to penetrate the capacitor portion and the sealing layer in a thickness direction in a manner directly electrically connected to the cathode layer, and both ends of the second through-hole conductor being led out to a surface of the sealing layer; a first external electrode layer being provided on a surface of the sealing layer in a manner electrically connected to the first through-hole conductor; and a second external electrode layer being provided on a surface of the sealing layer in a manner electrically connected to the second through-hole conductor, and at least a portion of the first external electrode layer overlapping the cathode layer in the thickness direction.

[0012] Effects of the Invention

[0013] According to the present invention, it is possible to provide a capacitor element capable of improving heat dissipation properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a cross-sectional view schematically showing an example of the capacitor element according to the first embodiment of the present invention.

[0015] Figure 2 yes Figure 1 A top view of the capacitor element along line AA is shown.

[0016] Figure 3 yes Figure 1 A top view of the capacitor element along line BB is shown.

[0017] Figure 4 yes Figure 1 A top view of the capacitor element along line CC is shown.

[0018] Figure 5 It is a cross-sectional view schematically showing another example of the capacitor element according to the first embodiment of the present invention.

[0019] Figure 6-1 Yes Description Figure 1 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of preparing an anode plate.

[0020] Figure 6-2 Yes Description Figure 1 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a dielectric layer.

[0021] Figure 6-3 Yes Description Figure 1 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming an insulating shielding layer.

[0022] Figure 6-4 Yes Description Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a solid electrolyte layer.

[0023] Figure 6-5 Yes Description Figure 1 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming a first conductive layer.

[0024] Figure 6-6 Yes Description Figure 1 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a through hole.

[0025] Figure 6-7 Yes Description Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, and shows a step of forming an insulating material.

[0026] Figure 6-8 Yes Description Figure 1 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of grinding an insulating material.

[0027] Figure 6-9 Yes Description Figure 1 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming a second conductive layer.

[0028] Figure 6-10 Yes Description Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a sealing layer.

[0029] Figure 6-11 Yes Description Figure 1 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming a first through hole and a second through hole.

[0030] Figure 6-12 Yes Description Figure 1 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a through-hole conductor and an external electrode layer.

[0031] Figure 7-1 Yes Description Figure 1 The schematic cross-sectional view of another example of the method for manufacturing a capacitor element shown in FIG. 1 shows a state after the through-hole is formed.

[0032] Figure 7-2 Yes Description Figure 1 FIG. 1 is a schematic cross-sectional view of another example of a method for manufacturing a capacitor element, showing a step of forming an insulating material.

[0033] Figure 7-3 Yes Description Figure 1 The schematic cross-sectional view of another example of the method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming the second conductive layer.

[0034] Figure 7-4 Yes Description Figure 1 FIG. 1 is a schematic cross-sectional view of another example of a method for manufacturing a capacitor element, showing a step of forming a sealing layer.

[0035] Figure 7-5 Yes Description Figure 1 The schematic cross-sectional view of another example of the method for manufacturing a capacitor element shown in FIG. 1 shows the step of forming the first through hole and the second through hole.

[0036] Figure 7-6 Yes Description Figure 1 1 is a schematic cross-sectional view of another example of a method for manufacturing a capacitor element, showing a step of forming a through-hole conductor and an external electrode layer.

[0037] Figure 8 It is a plan view schematically showing an example of a capacitor element according to a second embodiment of the present invention.

[0038] Figure 9-1 Yes Description Figure 8 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of preparing an anode plate.

[0039] Figure 9-2 Yes Description Figure 8 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a dielectric layer.

[0040] Figure 9-3 Yes Description Figure 8 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming an insulating shielding layer.

[0041] Figure 9-4 Yes Description Figure 8 FIG. 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a solid electrolyte layer.

[0042] Figure 9-5 Yes Description Figure 8 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming a first conductive layer.

[0043] Figure 9-6 Yes Description Figure 8 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a through hole.

[0044] Figure 9-7 Yes Description Figure 8 FIG. 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, and shows a step of forming an insulating material.

[0045] Figure 9-8 Yes Description Figure 8 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of grinding an insulating material.

[0046] Figure 9-9 Yes Description Figure 8 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming a second conductive layer.

[0047] Figure 9-10 Yes Description Figure 8 FIG. 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a sealing layer.

[0048] Figure 9-11 Yes Description Figure 8 The schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown in FIG. 1 shows a step of forming a first through hole and a second through hole.

[0049] Figure 9-12 Yes Description Figure 8 1 is a schematic cross-sectional view of an example of a method for manufacturing a capacitor element, showing a step of forming a through-hole conductor and an external electrode layer. DETAILED DESCRIPTION

[0050] The capacitor element of the present invention is described below. In addition, the present invention is not limited to the following structure, and can be appropriately changed within the scope of the present invention. In addition, a structure formed by combining a plurality of the preferred structures described below is also the present invention.

[0051] The embodiments shown below are examples, and it is self-evident that parts of the structures shown in different embodiments can be replaced or combined. After the second embodiment, the description of matters common to the first embodiment is omitted, and the differences are mainly described. In particular, the same effects achieved by the same structure are not mentioned in sequence in each embodiment.

[0052] In the following description, when the embodiments are not particularly distinguished, they are simply referred to as “capacitor elements of the present invention”.

[0053] In this specification, terms indicating the relationship between elements (such as "vertical", "parallel", "orthogonal", etc.) and terms indicating the shape of an element do not express only strict meanings, but rather express substantially equal ranges, for example, also including differences of several percentage points.

[0054] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, and other aspects may differ from those of actual products.

[0055] [First embodiment]

[0056] Figure 1 It is a cross-sectional view schematically showing an example of the capacitor element according to the first embodiment of the present invention. Figure 2 yes Figure 1 A top view of the capacitor element along line AA is shown. Figure 3 yes Figure 1 A top view of the capacitor element along line BB is shown. Figure 4 yes Figure 1 A top view of the capacitor element along line CC is shown. In addition, Figure 1 yes Figure 2 to Figure 4 A cross-sectional view of the capacitor element along line DD is shown.

[0057] Figure 1 to Figure 4 The capacitor element 1 shown includes: a capacitor portion 10; a sealing layer 20, which is provided to cover the capacitor portion 10; a through-hole conductor 40, which is provided to penetrate the capacitor portion 10 and the sealing layer 20 in the thickness direction, and the two ends of the through-hole conductor 40 are led to the surface of the sealing layer 20; and an external electrode layer 30, which is provided on the surface of the sealing layer 20 in a manner electrically connected to the through-hole conductor 40.

[0058] exist Figure 1 to Figure 4 In the example shown, one capacitor unit 10 is arranged inside the sealing layer 20. The number of capacitor units 10 arranged inside the sealing layer 20 is not particularly limited, and may be one or more.

[0059] The capacitor unit 10 includes: an anode plate 11 having a porous portion 11B on at least one main surface of a core portion 11A; a dielectric layer 13 provided on the surface of the porous portion 11B; and a cathode layer 12 provided on the surface of the dielectric layer 13. Thus, the capacitor unit 10 constitutes an electrolytic capacitor. Figure 1 In the example shown, the anode plate 11 has the porous portion 11B on both main surfaces of the core portion 11A, but the porous portion 11B may be formed on only one main surface of the core portion 11A.

[0060] Cathode layer 12 includes, for example, solid electrolyte layer 12A provided on the surface of dielectric layer 13. When cathode layer 12 includes solid electrolyte layer 12A, capacitor unit 10 configures a solid electrolytic capacitor.

[0061] Preferably, if Figure 1 As shown, the sealing layer 20 is provided on two main surfaces of the capacitor unit 10 that are opposed to each other in the thickness direction. The capacitor unit 10 is protected by the sealing layer 20 .

[0062] The sealing layer 20 may be composed of only one layer or may be composed of two or more layers. When the sealing layer 20 is composed of two or more layers, the materials constituting the respective layers may be the same or different.

[0063] The sealing layer 20 is formed so as to seal the capacitor unit 10 by, for example, a method of thermocompression bonding an insulating resin sheet or a method of applying an insulating resin paste and then thermally curing the paste.

[0064] exist Figure 1 In the illustrated example, the through-hole conductor 40 includes a first through-hole conductor 41 electrically connected to the anode plate 11 and a second through-hole conductor 42 electrically connected to the cathode layer 12 .

[0065] First through-hole conductor 41 only needs to be provided on the inner wall surface of first through-hole 51 penetrating capacitor unit 10 and sealing layer 20 in the thickness direction. First through-hole conductor 41 may be provided only on the inner wall surface of first through-hole 51 or throughout the entire interior of first through-hole 51.

[0066] like Figure 3 As shown, when viewed in a plan view from the thickness direction, one first through-hole conductor 41 may be provided inside the cathode layer 12 , or two or more first through-hole conductors 41 may be provided.

[0067] Second through-hole conductor 42 may be provided at least on the inner wall surface of second through-hole 52 penetrating capacitor unit 10 and sealing layer 20 in the thickness direction. Second through-hole conductor 42 may be provided only on the inner wall surface of second through-hole 52 or throughout the entire interior of second through-hole 52.

[0068] Preferably, if Figure 1 As shown, the insulating material 22 is filled between the second through-hole conductor 42 and the capacitor unit 10 (particularly, the anode plate 11 ).

[0069] like Figure 3 As shown, when viewed in plan from the thickness direction, one second through-hole conductor 42 may be provided inside the cathode layer 12 , or two or more second through-hole conductors 42 may be provided.

[0070] exist Figure 1 to Figure 4Although not shown in the figure, the through-hole conductor 40 may include a third through-hole conductor that is not electrically connected to the anode plate 11 and the cathode layer 12 .

[0071] The external electrode layer 30 includes a first external electrode layer 31 electrically connected to the first through-hole conductor 41 and the anode plate 11 , and a second external electrode layer 32 electrically connected to the second through-hole conductor 42 and the cathode layer 12 .

[0072] For one capacitor unit 10, one first external electrode layer 31 may be provided or a plurality of first external electrode layers 31 may be provided. Similarly, for one capacitor unit 10, one second external electrode layer 32 may be provided or a plurality of second external electrode layers 32 may be provided. For one capacitor unit 10, the number of first external electrode layers 31 may be the same as the number of second external electrode layers 32 or may be different from the number of second external electrode layers 32.

[0073] The planar shape of the external electrode layer 30 when viewed from the thickness direction is not particularly limited, and examples thereof include a rectangle (square or rectangular), a quadrilateral other than a rectangle, a triangle, a pentagon, a hexagon or other polygon, a circle, an ellipse, a shape formed by combining these shapes, etc. In addition, the planar shape of the external electrode layer 30 may also be an L-shape, a C-shape (Japanese U-shape), a step shape, etc.

[0074] The planar shape of the first external electrode layer 31 when viewed in the thickness direction may be the same as or different from the planar shape of the second external electrode layer 32 when viewed in the thickness direction.

[0075] The cathode layer 12 can be led out as described below. Figure 5 As in the example shown, the internal via conductor is used, but Figure 1 In the example shown, the second through-hole conductor 42 is directly electrically connected to the cathode layer 12, and the cathode layer 12 is led out by the second through-hole conductor 42. Thus, by directly electrically connecting the second through-hole conductor 42 to the cathode layer 12, the heat dissipation path, that is, the heat dissipation area can be increased compared to the case where the lead is only made by the internal via conductor. Figure 1 In the example shown, at least a portion of the first external electrode layer 31 overlaps the cathode layer 12 in the thickness direction, thereby also increasing the heat dissipation area. As a result, the heat dissipation of the capacitor element 1 can be improved. In addition, as a result, the temperature rise caused by the heat generation of the capacitor element 1 can be suppressed.

[0076] In addition, the second through-hole conductor 42 is directly electrically connected to the cathode layer 12, so that the second through-hole conductor 42 and the cathode layer 12 are in direct contact without passing through the resin portion which is a different material, thereby improving the rigidity of the capacitor element 1. Similarly, at least a portion of the first external electrode layer 31 overlaps with the cathode layer 12 in the thickness direction, thereby increasing the area of ​​the first external electrode layer 31, thereby improving the rigidity of the capacitor element 1. Figure 1 When the cathode layer 12 is not led out using an internal via conductor as in the example shown, the capacitor element 1 can be made thinner. On the other hand, there is a possibility of warping of the capacitor element 1. However, by overlapping the first external electrode layer 31 with the cathode layer 12, the rigidity of the capacitor element 1 is increased, and the occurrence of such warping can also be suppressed.

[0077] Furthermore, at least a portion of the first external electrode layer 31 overlaps the cathode layer 12 in the thickness direction, so that the area of ​​the first external electrode layer 31 can be increased, thereby suppressing the intrusion of moisture, oxygen, etc. from the outside into the capacitor unit 10 .

[0078] In this specification, the through-hole conductor is directly electrically connected to the conductive layer such as the cathode layer and the anode plate, excluding the case where the through-hole conductor is only electrically connected to the conductive layer via the via conductor and the external electrode layer (connection path). In this case, the through-hole conductor is electrically connected to the conductive layer at the inner wall surface of the through hole, that is, the side wall portion of the through-hole conductor is electrically connected to the conductive layer. Figure 1 In the illustrated example, the second through-hole conductor 42 is electrically connected to the cathode layer 12 at the inner wall surface of the second through hole 52 .

[0079] In addition, Figure 1 In the illustrated example, the first through-hole conductor 41 is also directly electrically connected to the anode plate 11 , and the first through-hole conductor 41 is electrically connected to the anode plate 11 at the inner wall surface of the first through-hole 51 .

[0080] It can also be, Figure 1 As shown, the first external electrode layer 31 only partially overlaps with the cathode layer 12 in the thickness direction. The ratio of the area of ​​the portion of the first external electrode layer 31 that overlaps with the cathode layer 12 in the thickness direction to the overall area of ​​the first external electrode layer 31 is not particularly limited, but is preferably 50% to 90%, more preferably 60% to 80%.

[0081] Alternatively, it can be, Figure 1As shown, the cathode layer 12 includes a copper layer 12Cu, the first external electrode layer 31 includes a copper layer 31Cu, and the second external electrode layer 32 includes a copper layer 32Cu. In this case, preferably, if the thickness of the copper layer 12Cu of the cathode layer 12 is set to d1, the thickness of the copper layer 31Cu of the first external electrode layer 31 is set to d2, and the thickness of the copper layer 32Cu of the second external electrode layer 32 is set to d3, then d1≥d2 and d1≥d3 are satisfied. Thus, current concentration to the cathode layer 12 can be suppressed, and heat generation can be suppressed. In addition, the volume of the copper layer 12Cu of the cathode layer 12 can be increased to promote heat diffusion and suppress damage to the capacitor unit 10.

[0082] The ratio of d1 to d2, d1 / d2, preferably satisfies 1<d1 / d2<3, and more preferably satisfies 1.5<d1 / d2<2.5. The ratio of d1 to d3, d1 / d3, preferably satisfies 1<d1 / d3<3, and more preferably satisfies 1.5<d1 / d3<2.5.

[0083] In addition, Figure 1 In the illustrated example, the copper layer 12Cu is a second conductive layer 12C of the cathode layer 12 described later, the copper layer 31Cu is a first external electrode layer 31 , and the copper layer 32Cu is a second external electrode layer 32 .

[0084] When the cathode layer 12 is composed of a plurality of layers including the copper layer 12Cu, the copper layer 12Cu is preferably one or more layers closest to the first external electrode layer 31 and the second external electrode layer 32 among the plurality of layers constituting the cathode layer 12 .

[0085] Furthermore, when the first external electrode layer 31 is composed of a plurality of layers including the copper layer 31Cu, the copper layer 31Cu may be any layer among the plurality of layers constituting the cathode layer 12 . The same applies to the second external electrode layer 32 .

[0086] From the viewpoint of heat dissipation, it is preferable to match the volumes of the anode and cathode of capacitor element 1. Based on a comparison between the volume of anode plate 11 and the volume of cathode layer 12, a preferred area ratio of first external electrode layer 31 to second external electrode layer 32 will be described.

[0087] The thickness of the core portion 11A of the anode plate 11 is set to, for example, 40 μm or more and 60 μm or less. Figure 2 Shown along Figure 1 The area of ​​the core portion 11A of the anode plate 11 is assumed to be approximately 100% in the plane of the AA line. In addition, the thickness of the copper layer 12Cu of each cathode layer 12 is set to approximately 30 μm, for example, on both main surface sides of the anode plate 11. Figure 3 Shown along Figure 1The area of ​​the copper layer 12Cu within the plane of the BB line is assumed to be approximately 100%.

[0088] Here, the thermal conductivity of copper is approximately 1.7 times the thermal conductivity of aluminum, which is a suitable material for the anode plate 11. As described above, the area of ​​the core 11A of the anode plate 11 is approximately the same as the area of ​​the copper layer 12Cu of each cathode layer 12 on both sides of the core 11A. Therefore, when the sum of the thicknesses of the copper layers 12Cu of the cathode layers 12 on both sides of the core 11A is 60 μm, the required thickness of the core 11A of the anode plate 11 is 60×1.7=102 μm. Therefore, the cathode is more advantageous than the anode in terms of thermal conductivity (heat dissipation). In addition, when the internal via conductor is connected to the cathode layer 12 as in the second embodiment described later, the cathode is further advantageous in terms of thermal conductivity (heat dissipation).

[0089] According to the above, from the viewpoint of correcting the imbalance of the volume of the internal anode and cathode to further improve the heat dissipation, it is preferred that when the area of ​​the first external electrode layer 31 electrically connected to the anode plate 11 is set to S1 and the area of ​​the second external electrode layer 32 electrically connected to the cathode layer 12 is set to S2, S1>S2 is satisfied. In addition, by satisfying S1>S2, the undulation (ripple) of the substrate on which the capacitor element 1 is mounted can also be suppressed.

[0090] In addition, in this specification, when simply referred to as "area", it means the area when it is planarly viewed from the thickness direction.

[0091] In addition, if Figure 1 As shown, when the first external electrode layer 31 and the second external electrode layer 32 are respectively provided on the two main surface sides of the capacitor part 10, it is more preferred that S1>S2 is satisfied on each main surface side of the capacitor part 10, but it is also possible that S1>S2 is satisfied on at least one main surface side of the capacitor part 10.

[0092] The ratio of S1 to S2, that is, S1 / S2, preferably satisfies 1<S1 / S2<3.5, and more preferably satisfies 1.5<S1 / S2<3.

[0093] Furthermore, comparisons such as S1>S2 and S1 / S2 are performed based on the areas of the first external electrode layer 31 and the second external electrode layer 32 provided on the same principal surface side of the capacitor unit 10 .

[0094] Preferably, the cathode layer 12 includes: a solid electrolyte layer 12A provided on the surface of the dielectric layer 13; a first conductor layer 12B provided on the surface of the solid electrolyte layer 12A; and a second conductor layer 12C provided on the surface of the first conductor layer 12B in a manner directly electrically connected to the second through-hole conductor 42. Thus, the second through-hole conductor 42 and the cathode layer 12 can be easily and directly electrically connected.

[0095] In addition, Figure 1 In the example shown, the same elements (members) are arranged on both main surface sides of core portion 11A of anode plate 11. This can also suppress the occurrence of warping of capacitor element 1. In addition, the electrostatic capacitance of capacitor portion 10 can be increased.

[0096] Preferably, first through-hole conductors 41 and second through-hole conductors 42 provided in capacitor element 1 have the same area, and more preferably, the same number of first through-hole conductors 41 and second through-hole conductors 42 provided in capacitor element 1. This can make heat dissipation of capacitor element 1 uniform.

[0097] In addition, it is preferred that the through-hole conductors 40 provided in the capacitor element 1 (i.e., the first through-hole conductors 41 and the second through-hole conductors 42 are not distinguished from each other) are arranged at equal intervals. This can also make the heat dissipation of the capacitor element 1 uniform. In addition, the occurrence of peeling called delamination, such as the peeling of the cathode layer from the anode plate, can be suppressed.

[0098] Preferably, capacitor unit 10 further includes insulating shielding layer 25 provided around through-hole conductor 40 on at least one main surface of anode plate 11 .

[0099] exist Figure 1 In the example shown, an insulating shielding layer 25 is provided between the first through-hole conductor 41 and the cathode layer 12. Figure 1 In the example shown, the insulating material 22 is filled between the second through-hole conductor 42 and the capacitor unit 10 (particularly the anode plate 11 ), and the insulating shielding layer 25 is provided between the insulating material 22 and the cathode layer 12 (for example, the solid electrolyte layer 12A).

[0100] Alternatively, the capacitor unit 10 may further include an insulating shielding layer 25 that surrounds the cathode layer 12 (e.g., solid electrolyte layer 12A. The same applies to this paragraph below) on at least one main surface of the anode plate 11. By surrounding the cathode layer 12 with the insulating shielding layer 25, insulation between the anode plate 11 and the cathode layer 12 is ensured to prevent a short circuit between the two. The insulating shielding layer 25 may be provided to surround a portion of the cathode layer 12, but is preferably provided to surround the entire cathode layer 12.

[0101] Figure 5 It is a cross-sectional view schematically showing another example of the capacitor element according to the first embodiment of the present invention.

[0102] Figure 5The capacitor element 2 shown further includes an internal via conductor 60, which is provided to penetrate the sealing layer 20 in the thickness direction, and one end of the internal via conductor 60 is electrically connected to the second external electrode layer 32 and the other end is electrically connected to the cathode layer 12. By providing such an internal via conductor 60, heat dissipation can be further improved. In addition, the close contact between layers can be improved, and the occurrence of delamination can be suppressed.

[0103] exist Figure 5 In the illustrated example, one end of the internal via conductor 60 is led out to the surface of the sealing layer 20 .

[0104] In addition, the internal via conductor 60 is electrically connected to the cathode layer 12. Thus, the cathode layer 12 is electrically conducted to the outside of the sealing layer 20 via the internal via conductor 60 and the second through-hole conductor 42, and can be electrically connected to the outside of the sealing layer 20. The number of the internal via conductor 60 electrically connected to the cathode layer 12 may be one or more.

[0105] exist Figure 5 Although not shown in the figure, the capacitor element 2 may include an internal via conductor 60 electrically connected to the anode plate 11. In this case, the anode plate 11 is electrically conducted to the outside of the sealing layer 20 via the internal via conductor 60, and can be electrically connected to the outside of the sealing layer 20. The internal via conductor 60 electrically connected to the anode plate 11 may be one or more.

[0106] Hereinafter, the detailed structure of capacitor elements 1 , 2 , etc. will be described.

[0107] As the plane shape of the capacitor part 10 when viewed from the thickness direction, for example, a rectangle (square or rectangular), a quadrilateral other than a rectangle, a triangle, a pentagon, a hexagon or other polygon, a circle, an ellipse, a shape formed by combining these shapes, etc. In addition, the plane shape of the capacitor part 10 may also be an L-shape, a C-shape (Japanese コ-shape), a step shape, etc.

[0108] Preferably, the anode plate 11 is made of a so-called valve metal that exhibits a valve action. Examples of the valve metal include metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of these metals. Among them, aluminum or an aluminum alloy is preferred.

[0109] The shape of the anode plate 11 is preferably a flat plate, and more preferably a foil. Thus, in this specification, "plate-like" also includes "foil-like".

[0110] The anode plate 11 only needs to have the porous portion 11B on at least one main surface of the core portion 11A. That is, the anode plate 11 may have the porous portion 11B on only one main surface of the core portion 11A as in the second embodiment described later, or may have the porous portion 11B on both main surfaces of the core portion 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and more preferably an etching layer.

[0111] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the core 11A that is not etched after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed to match the required withstand voltage and electrostatic capacitance, but preferably, the total thickness of the porous portions 11B on both sides of the core 11A is 10 μm or more and 180 μm or less.

[0112] The pore size of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore size of the porous portion 11B refers to a median diameter D50 measured by a mercury porosimeter. The pore size of the porous portion 11B can be controlled by adjusting various conditions during etching, for example.

[0113] The dielectric layer 13 provided on the surface of the porous portion 11B is porous reflecting the surface state of the porous portion 11B and has a fine concavoconvex surface shape. Preferably, the dielectric layer 13 is composed of an oxide film of the above-mentioned valve-acting metal. For example, when an aluminum foil is used as the anode plate 11, the surface of the aluminum foil is subjected to an anodic oxidation treatment (also called chemical conversion treatment) in an aqueous solution containing ammonium adipate or the like, so that the dielectric layer 13 composed of an oxide film can be formed.

[0114] The thickness of the dielectric layer 13 is designed to match the required withstand voltage and electrostatic capacitance, but is preferably not less than 10 nm and not more than 100 nm.

[0115] In the case where the cathode layer 12 includes a solid electrolyte layer 12A, as a material constituting the solid electrolyte layer 12A, for example, conductive polymers such as polypyrroles, polythiophenes, and polyanilines can be cited. Among them, polythiophenes are preferred, and poly (3,4-ethylenedioxythiophene) called PEDOT is particularly preferred. In addition, the above-mentioned conductive polymer may also include a dopant such as polystyrene sulfonic acid (PSS). In addition, it is preferred that the solid electrolyte layer 12A includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.

[0116] The thickness of solid electrolyte layer 12A from the surface of porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0117] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment solution containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 and drying it.

[0118] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0119] When the cathode layer 12 includes the first conductor layer 12B and the second conductor layer 12C, the first conductor layer 12B and the second conductor layer 12C each include at least one of a conductive resin layer and a metal layer. The first conductor layer 12B and the second conductor layer 12C may each be only a conductive resin layer or only a metal layer, but it is preferred that the first conductor layer 12B is composed of only a conductive resin layer and the second conductor layer 12C is composed of only a metal layer. It is preferred that the first conductor layer 12B covers the entire surface of the solid electrolyte layer 12A.

[0120] Examples of the conductive resin layer include a conductive adhesive layer (conductive paste layer) containing at least one conductive filler selected from the group consisting of a silver filler, a copper filler, a nickel filler, and a carbon filler.

[0121] As the metal layer, for example, a metal plating layer, a metal foil layer, etc. can be cited. Preferably, the metal layer is composed of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as main components. In addition, the "main component" refers to the element component with the largest weight ratio.

[0122] The first conductive layer 12B includes, for example, a carbon paste layer provided on the surface of the solid electrolyte layer 12A and a copper paste layer provided on the surface of the carbon paste layer.

[0123] The second conductive layer 12C is formed of a copper layer 12Cu such as a copper plating layer or a copper foil layer.

[0124] When the first conductor layer 12B includes a copper paste layer, the thickness d1 of the copper layer 12Cu of the cathode layer 12 is the total thickness of the copper layer 12Cu of the second conductor layer 12C and the copper paste layer of the first conductor layer 12B.

[0125] The carbon paste layer of the first conductor layer 12B is provided to electrically and mechanically connect the solid electrolyte layer 12A to the copper paste layer of the first conductor layer 12B. The carbon paste layer can be formed in a predetermined area by applying the carbon paste to the surface of the solid electrolyte layer 12A by sponge transfer, screen printing, dispenser coating, inkjet printing, etc. In addition, it is preferred that the carbon paste layer is laminated with the copper paste layer of the next process in a sticky state before drying. The thickness of the carbon paste layer is preferably greater than 2 μm and less than 50 μm.

[0126] The copper paste layer of the first conductive layer 12B can be formed in a predetermined region by applying the copper paste to the surface of the carbon paste layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing, etc. The thickness of the copper paste layer is preferably 2 μm to 50 μm.

[0127] The copper plating layer of the second conductive layer 12C can be formed in a predetermined region by patterning by etching (dry or wet) after film formation by electrolytic plating, electroless plating, sputtering, vacuum deposition, etc. The thickness of the copper plating layer is preferably 2 μm to 35 μm.

[0128] The copper foil layer of the second conductive layer 12C can be formed in a predetermined region by laminating copper foils patterned by etching (dry or wet) using a press machine or laminating copper foils by a press machine and then patterning by etching (dry or wet). The thickness of the copper foil layer is preferably 3 μm to 35 μm.

[0129] The sealing layer 20 is made of an insulating material. In this case, it is preferable that the sealing layer 20 is made of an insulating resin.

[0130] Examples of the insulating resin constituting the sealing layer 20 include epoxy resin and phenol resin.

[0131] Preferably, the sealing layer 20 further contains a filler.

[0132] Examples of the filler contained in the sealing layer 20 include inorganic fillers such as silica particles and alumina particles.

[0133] A layer such as a stress relaxation layer or a moisture-proof film may be provided between the capacitor unit 10 and the sealing layer 20 .

[0134] The insulating shielding layer 25 is made of an insulating material. In this case, it is preferable that the insulating shielding layer 25 is made of an insulating resin.

[0135] Examples of the insulating resin constituting the insulating shielding layer 25 include polyphenylsulfone resin, polyethersulfone resin, cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof.

[0136] The insulating shielding layer 25 may be made of the same resin as the sealing layer 20. If the insulating shielding layer 25 contains an inorganic filler different from the sealing layer 20, it may adversely affect the effective capacitance of the capacitor unit 10. Therefore, the insulating shielding layer 25 is preferably made of a single resin.

[0137] The insulating shielding layer 25 can be formed in a predetermined region by applying a shielding material such as a composition containing an insulating resin to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0138] The insulating shielding layer 25 may be formed in the porous portion 11B before or after the dielectric layer 13 is formed.

[0139] The first external electrode layer 31 is electrically connected to the anode plate 11. Figure 1 In the example shown, the first external electrode layer 31 is provided on the surface of the first through-hole conductor 41 and functions as a connection terminal of the capacitor unit 10. Figure 1 In the illustrated example, the first external electrode layer 31 is electrically connected to the anode plate 11 via the first through-hole conductor 41 , and functions as a connection terminal for the anode plate 11 .

[0140] Examples of the constituent material of the first external electrode layer 31 include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the first external electrode layer 31 is formed by plating the surface of the first through-hole conductor 41, for example.

[0141] In order to improve the close fit between the first external electrode layer 31 and other components, here, in order to improve the close fit between the first external electrode layer 31 and the first through-hole conductor 41, as the constituent material of the first external electrode layer 31, a mixed material (conductive paste material) of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can be used.

[0142] Alternatively, the first external electrode layer 31 may include a copper layer 31Cu such as a copper paste layer, a copper plating layer, or a copper foil layer. The copper paste layer, the copper plating layer, and the copper foil layer of the first external electrode layer 31 may be formed in the same manner as the copper paste layer of the first conductor layer 12B and the copper plating layer and the copper foil layer of the second conductor layer 12C.

[0143] The second external electrode layer 32 is electrically connected to the cathode layer 12. Figure 1 In the example shown, the second external electrode layer 32 is provided on the surface of the second through-hole conductor 42 and functions as a connection terminal of the capacitor unit 10. Figure 1 In the illustrated example, the second external electrode layer 32 is electrically connected to the cathode layer 12 via the second through-hole conductor 42 , and functions as a connection terminal for the cathode layer 12 .

[0144] Examples of the constituent material of the second external electrode layer 32 include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the second external electrode layer 32 is formed by plating the surface of the second through-hole conductor 42, for example.

[0145] In order to improve the close fit between the second external electrode layer 32 and other components, here, in order to improve the close fit between the second external electrode layer 32 and the second through-hole conductor 42, as the constituent material of the second external electrode layer 32, a mixed material (conductive paste material) of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can be used.

[0146] The second external electrode layer 32 may include a copper layer 32Cu such as a copper paste layer, a copper plating layer, or a copper foil layer. The copper paste layer, the copper plating layer, and the copper foil layer of the second external electrode layer 32 may be formed in the same manner as the copper paste layer of the first conductor layer 12B and the copper plating layer and the copper foil layer of the second conductor layer 12C.

[0147] It is preferable that the first external electrode layer 31 and the second external electrode layer 32 are composed of the same material at least in terms of type, but they may be different from each other.

[0148] When a plurality of capacitor units 10 are configured, a first external electrode layer 31 electrically connected to the anode plate 11 and a second external electrode layer 32 electrically connected to the cathode layer 12 may be provided in each of the plurality of capacitor units 10, or at least one of the first external electrode layer 31 and the second external electrode layer 32 may be provided in common in the plurality of capacitor units 10.

[0149] exist Figure 1 In the illustrated example, the first external electrode layer 31 and the second external electrode layer 32 are provided on both principal surfaces of the sealing layer 20 , but may be provided on only one principal surface of the sealing layer 20 .

[0150] The first through-hole conductor 41 is electrically connected to the anode plate 11 at the inner wall surface of the first through-hole 51. More specifically, it is preferable that the first through-hole conductor 41 is electrically connected to the end surface of the anode plate 11 facing the inner wall surface of the first through-hole 51 in the plane direction. Thus, the anode plate 11 is electrically led out to the outside through the first through-hole conductor 41.

[0151] Preferably, core 11A and porous portion 11B are exposed on the end surface of anode plate 11 and electrically connected to first through-hole conductor 41. In this case, porous portion 11B is electrically connected to first through-hole conductor 41 in addition to core 11A.

[0152] Preferably, if Figure 2 As shown, when viewed from the thickness direction, the first through-hole conductor 41 is electrically connected to the anode plate 11 over the entire circumference of the first through-hole 51. In this case, the heat dissipation path increases, so it is possible to further improve the heat dissipation of the capacitor element 1. In addition, the connection resistance between the anode plate 11 and the first through-hole conductor 41 is easy to reduce, so the equivalent series resistance (ESR) is easy to reduce.

[0153] The first through-hole conductor 41 is formed, for example, as follows. First, a first through-hole 51 is formed that penetrates the capacitor portion 10 and the sealing layer 20 in the thickness direction by drilling, laser processing, etc. Then, the first through-hole conductor 41 is formed by metallizing the inner wall surface of the first through-hole 51 with a metal material containing a low-resistance metal such as copper, gold, or silver. When forming the first through-hole conductor 41, for example, the inner wall surface of the first through-hole 51 is metallized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy. In addition, as for the method of forming the first through-hole conductor 41, in addition to the method of metallizing the inner wall surface of the first through-hole 51, a method of filling the first through-hole 51 with a metal material, a composite material of metal and resin, etc. may also be used.

[0154] An anode connection layer may be provided between the anode plate 11 and the first through-hole conductor 41 in the plane direction. That is, the anode plate 11 and the first through-hole conductor 41 may be electrically connected via the anode connection layer.

[0155] The anode connection layer is provided between the anode plate 11 and the first through-hole conductor 41 in the surface direction, so that the anode connection layer functions as a barrier layer for the anode plate 11, more specifically, as a barrier layer for the core portion 11A and the porous portion 11B. If the anode connection layer functions as a barrier layer for the anode plate 11, the dissolution of the anode plate 11 that occurs during the treatment with a chemical solution for forming the external electrode layer 30 (for example, the first external electrode layer 31) is suppressed, and the penetration of the chemical solution into the capacitor portion 10 is further suppressed, so that the reliability is easily improved.

[0156] Preferably, the anode connection layer includes a layer containing nickel as a main component. In this case, damage to the metal (eg, aluminum) constituting the anode plate 11 is reduced, so the barrier property of the anode connection layer to the anode plate 11 is easily improved.

[0157] Furthermore, the anode connection layer may not be provided between the anode plate 11 and the first through-hole conductor 41 in the plane direction. In this case, the first through-hole conductor 41 may be directly connected to the end surface of the anode plate 11 .

[0158] exist Figure 1 In the example shown, the first through-hole conductor 41 is provided only on the inner wall surface of the first through-hole 51. In this case, a resin-filled portion 91 filled with a resin material may be provided in the first through-hole 51. The resin-filled portion 91 is provided in the space surrounded by the first through-hole conductor 41 in the first through-hole 51. If the space in the first through-hole 51 is eliminated by providing the resin-filled portion 91, the delamination of the first through-hole conductor 41 is suppressed. In addition, the resin-filled portion 91 may be either a conductor or an insulator.

[0159] exist Figure 1 In the example shown, the second through-hole conductor 42 is electrically connected to the cathode layer 12, particularly the second conductor layer 12C, at the inner wall surface of the second through-hole 52. More specifically, it is preferred that the second through-hole conductor 42 is electrically connected to the end surface of the second conductor layer 12C that faces the inner wall surface of the second through-hole 52 in the plane direction. Thus, the cathode layer 12 is electrically led out to the outside via the second through-hole conductor 42.

[0160] Preferably, if Figure 3 As shown, when viewed from the thickness direction, the second through-hole conductor 42 is electrically connected to the cathode layer 12, particularly to the second conductive layer 12C, over the entire circumference of the second through-hole 52. In this case, the heat dissipation path increases, so it is possible to further improve the heat dissipation of the capacitor element 1. In addition, the connection resistance between the cathode layer 12 and the second through-hole conductor 42 is easily reduced, so the equivalent series resistance (ESR) is easily reduced.

[0161] The second through-hole conductor 42 is formed, for example, as follows. First, a through-hole 53 is formed that penetrates the capacitor portion 10 in the thickness direction by drilling, laser processing, etc. Next, the insulating material 22 is filled into the through-hole 53. The second through-hole 52 is formed by drilling, laser processing, etc. on the portion filled with the insulating material 22. At this time, the diameter of the second through-hole 52 is made smaller than the diameter of the through-hole 53 filled with the insulating material 22, so that the insulating material 22 exists between the inner wall surface of the through-hole 53 formed previously and the inner wall surface of the second through-hole 52 in the plane direction. Thereafter, the inner wall surface of the second through-hole 52 is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the second through-hole conductor 42. When forming the second through-hole conductor 42, for example, the inner wall surface of the second through-hole 52 is metallized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy. In addition, the second through-hole conductor 42 may be formed by filling the second through-hole 52 with a metal material, a composite material of metal and resin, or the like, in addition to metallizing the inner wall surface of the second through-hole 52 .

[0162] Preferably, the insulating material 22 is made of an insulating resin. Examples of the insulating resin constituting the insulating material 22 include epoxy resins and phenolic resins. Furthermore, preferably, the insulating material 22 includes a filler. Examples of the filler included in the insulating material 22 include inorganic fillers such as silica particles, alumina particles, and metal particles.

[0163] The insulating material 22 may be made of the same material as the sealing layer 20 .

[0164] Although it is possible that a cathode connection layer like an anode connection layer is provided between the cathode layer 12, especially the second conductive layer 12C, and the second through-hole conductor 42 in the plane direction, it is preferable that a cathode connection layer like an anode connection layer is not provided. In the latter case, the second through-hole conductor 42 can be directly connected to the end surface of the second conductive layer 12C.

[0165] exist Figure 1 In the example shown, the second through-hole conductor 42 is provided only on the inner wall surface of the second through-hole 52. In this case, a resin-filled portion 92 filled with a resin material may be provided in the second through-hole 52. The resin-filled portion 92 is provided in the space surrounded by the second through-hole conductor 42 in the second through-hole 52. If the space in the second through-hole 52 is eliminated by providing the resin-filled portion 92, the delamination of the second through-hole conductor 42 is suppressed. In addition, the resin-filled portion 92 may be either a conductor or an insulator.

[0166] Examples of the constituent material of internal via conductor 60 include metal materials containing low-resistance metals such as silver, gold, and copper.

[0167] The internal via conductor 60 is formed, for example, by plating the inner wall surface of a through hole penetrating the sealing layer 20 in the thickness direction with the above-mentioned metal material or by filling the through hole with a conductive paste and then performing a heat treatment.

[0168] Figure 6-1 to Figure 6-12 Yes Description Figure 1 Schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown. Figure 6-1 Indicates the process of preparing the anode plate. Figure 6-2 The step of forming a dielectric layer is shown. Figure 6-3 It shows the process of forming an insulating shielding layer. Figure 6-4 The step of forming a solid electrolyte layer is shown. Figure 6-5 The step of forming the first conductive layer is shown. Figure 6-6 It shows the process of forming the through hole. Figure 6-7 This shows the process of forming an insulating material. Figure 6-8 This indicates the process of grinding insulating materials. Figure 6-9 The step of forming the second conductive layer is shown. Figure 6-10 This shows the process of forming a sealing layer. Figure 6-11 The step of forming the first through hole and the second through hole is shown. Figure 6-12 The process of forming a through-hole conductor and an external electrode layer is shown.

[0169] Figure 1 The capacitor element 1 shown is formed, for example, as follows.

[0170] First, if Figure 6-1 As shown in FIG. 1 , an anode plate 11 having a core portion 11A with porous portions 11B on both main surfaces thereof is prepared.

[0171] Then, if Figure 6-2 As shown in FIG. 1 , a dielectric layer 13 is formed on the porous portion 11B.

[0172] Then, if Figure 6-3 As shown, an insulating shielding layer 25 is formed on the dielectric layer 13 .

[0173] Then, if Figure 6-4 As shown, solid electrolyte layer 12A is formed on dielectric layer 13 in a region surrounded by insulating shielding layer 25 .

[0174] Then, if Figure 6-5 As shown in FIG. 1 , the first conductive layer 12B is formed on the solid electrolyte layer 12A.

[0175] Then, if Figure 6-6As shown, a through hole 53 is formed which penetrates the insulating shielding layer 25 , the dielectric layer 13 , and the anode plate 11 .

[0176] Then, if Figure 6-7 As shown, the insulating material 22 is laminated so as to cover the insulating shielding layer 25 and the first conductive layer 12B, and the through-hole 53 is filled with the insulating material 22 .

[0177] Then, if Figure 6-8 As shown, the insulating material 22 is polished and thinned until the first conductive layer 12B is exposed.

[0178] Then, if Figure 6-9 As shown in FIG. 1 , the second conductive layer 12C is formed on the first conductive layer 12B and the insulating material 22 .

[0179] Then, if Figure 6-10 As shown in FIG. 1 , the sealing layer 20 is formed so as to cover the second conductive layer 12C and the insulating material 22 .

[0180] Then, if Figure 6-11 As shown, a first through hole 51 is formed through the sealing layer 20, the insulating material 22, the insulating shielding layer 25, the dielectric layer 13, and the anode plate 11, and a second through hole 52 is formed through the sealing layer 20, the second conductive layer 12C, and the insulating material 22. The second through hole 52 is located inside the region where the through hole 53 is formed.

[0181] Then, if Figure 6-12 As shown, the first through-hole conductor 41 is formed in the first through-hole 51, and the second through-hole conductor 42 is formed in the second through-hole 52. Alternatively, a resin-filled portion 91 and a resin-filled portion 92 may be formed in the first through-hole conductor 41 and the second through-hole conductor 42, respectively. Finally, the first external electrode layer 31 is formed on the sealing layer 20 so as to cover the first through-hole conductor 41, and the second external electrode layer 32 is formed on the sealing layer 20 so as to cover the second through-hole conductor 42.

[0182] Figure 7-1 to Figure 7-6 Yes Description Figure 1 Schematic cross-sectional view of another example of a method for manufacturing a capacitor element shown. Figure 7-1 It shows the state after the through hole is formed. Figure 7-2 This shows the process of forming an insulating material. Figure 7-3 The step of forming the second conductive layer is shown. Figure 7-4 This shows the process of forming a sealing layer. Figure 7-5 The step of forming the first through hole and the second through hole is shown. Figure 7-6 The process of forming a through-hole conductor and an external electrode layer is shown.

[0183] Figure 1The capacitor element 1 shown may be formed, for example, as follows.

[0184] First, if Figure 7-1 As shown, Figure 6-1 to Figure 6-6 In the same manner as shown, a through hole 53 is formed which penetrates the insulating shielding layer 25 , the dielectric layer 13 , and the anode plate 11 .

[0185] Then, if Figure 7-2 As shown, the insulating material 22 is formed only in the through hole 53 by a method of filling a resin material, screen printing, dispenser coating, inkjet printing, or the like.

[0186] Afterwards, if Figure 7-3 to Figure 7-6 As shown, Figure 6-9 to Figure 6-12 Similarly to the case shown in the figure, the second conductor layer 12C, the sealing layer 20, the first through hole 51, the second through hole 52, the first through hole conductor 41, the second through hole conductor 42, the first external electrode layer 31, and the second external electrode layer 32 are formed. In addition, the resin filling part 91 and the resin filling part 92 may be formed as needed.

[0187] [Second embodiment]

[0188] Figure 8 It is a plan view schematically showing an example of a capacitor element according to a second embodiment of the present invention.

[0189] exist Figure 8 In the capacitor element 3 shown, the anode plate 11 has a porous portion 11B only on one main surface of the core 11A, and the capacitor portion 10 (anode plate 11, dielectric layer 13 and cathode layer 12), sealing layer 20, external electrode layer 30 (first external electrode layer 31 and second external electrode layer 32) and other components are provided only on a single surface of the capacitor element 3.

[0190] exist Figure 8 In the example shown, one end of the via-hole conductor 40 (the first via-hole conductor 41 and the second via-hole conductor 42 ) is electrically connected to the external electrode layer 30 , but the other end is exposed to a surface where the capacitor unit 10 and the like are not provided.

[0191] Figure 9-1 to Figure 9-12 Yes Description Figure 8 Schematic cross-sectional view of an example of a method for manufacturing a capacitor element shown. Figure 9-1 Indicates the process of preparing the anode plate. Figure 9-2 The step of forming a dielectric layer is shown. Figure 9-3 It shows the process of forming an insulating shielding layer. Figure 9-4 The step of forming a solid electrolyte layer is shown. Figure 9-5 The step of forming the first conductive layer is shown. Figure 9-6 It shows the process of forming the through hole. Figure 9-7This shows the process of forming an insulating material. Figure 9-8 This indicates the process of grinding insulating materials. Figure 9-9 The step of forming the second conductive layer is shown. Figure 9-10 This shows the process of forming a sealing layer. Figure 9-11 The step of forming the first through hole and the second through hole is shown. Figure 9-12 The process of forming a through-hole conductor and an external electrode layer is shown.

[0192] Figure 8 The capacitor element 3 shown may be formed, for example, as follows.

[0193] First, if Figure 9-1 As shown in FIG. 1 , an anode plate 11 having a porous portion 11B only on one main surface of a core portion 11A is prepared.

[0194] Then, if Figure 9-2 to Figure 9-5 As shown, Figure 6-2 to Figure 6-5 In the same manner as shown, the dielectric layer 13, the insulating shielding layer 25, the solid electrolyte layer 12A, and the first conductive layer 12B are formed.

[0195] Then, if Figure 9-6 As shown, Figure 6-6 In the same manner as shown, the capacitor element sheet having the through hole 53 formed therein is placed on the carrier board CB.

[0196] Afterwards, if Figure 9-7 to Figure 9-12 As shown, Figure 6-7 to Figure 6-12 Similarly to the case shown in the figure, after laminating the insulating material 22 and grinding, the second conductor layer 12C, the sealing layer 20, the first through hole 51, the second through hole 52, the first through hole conductor 41, the second through hole conductor 42, the first external electrode layer 31, and the second external electrode layer 32 are formed. In addition, the resin filling part 91 and the resin filling part 92 may be formed as needed.

[0197] [Other embodiments]

[0198] The capacitor element of the present invention is not limited to the above-described embodiment, and various applications and modifications can be made to the structure, manufacturing conditions, etc. of the capacitor element within the scope of the present invention.

[0199] In the capacitor element of the present invention, one capacitor portion or a plurality of capacitor portions may be disposed inside the sealing layer.

[0200] In the capacitor element of the present invention, when a plurality of capacitor units are arranged inside the sealing layer, the adjacent capacitor units can be physically disconnected from each other. Therefore, the adjacent capacitor units can be electrically disconnected or electrically connected to each other. Preferably, the portions where the adjacent capacitor units are disconnected from each other are filled with insulating materials such as sealing layers. The intervals between adjacent capacitor units can be constant in the thickness direction or reduced in the thickness direction.

[0201] In the capacitor element of the present invention, when a plurality of capacitor units are arranged inside the sealing layer, the plurality of capacitor units can be arranged in a manner arranged in the surface direction, can be arranged in a manner stacked in the thickness direction, or can be arranged in a combination of the two. The plurality of capacitor units can be arranged regularly or irregularly. The size and shape of the capacitor element can be the same, or can be partially or completely different. Preferably, the structures of the capacitor elements are the same, but capacitor elements with different structures can also be included.

[0202] The capacitor element of the present invention can be appropriately used as a constituent material of a composite electronic component. Such a composite electronic component includes, for example: the capacitor element of the present invention; an external electrode layer, which is provided on the surface of the sealing layer of the capacitor element and is electrically connected to the anode plate and cathode layer of the capacitor element respectively; and an electronic component, which is connected to the external electrode layer.

[0203] In the composite electronic component, the electronic component connected to the external electrode layer may be either a passive element or an active element. Both the passive element and the active element may be connected to the external electrode layer, or either the passive element or the active element may be connected to the external electrode layer. In addition, a composite of the passive element and the active element may be connected to the external electrode layer.

[0204] Examples of passive components include inductors, etc. Examples of active components include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0205] The capacitor element of the present invention has a sheet-like shape as a whole. Therefore, in the composite electronic component, the capacitor element can be treated like a mounting substrate, and the electronic component can be mounted on the capacitor element. Moreover, by setting the shape of the electronic component mounted on the capacitor element to be sheet-like, the capacitor element and the electronic component can also be connected in the thickness direction via a through-hole conductor that penetrates each electronic component in the thickness direction. As a result, active components and passive components can be configured as batch modules.

[0206] For example, the capacitor element of the present invention can be electrically connected between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied, thereby forming a switching regulator.

[0207] In the composite electronic component, a circuit layer may be formed on any surface of a capacitor matrix sheet in which a plurality of capacitor elements of the present invention are further arranged, and a passive element or an active element may be connected thereto.

[0208] Alternatively, the capacitor element of the present invention may be placed in a cavity previously provided in a substrate, embedded in a resin, and then a circuit layer may be formed on the resin. Alternatively, other electronic components (passive or active) may be mounted in other cavities of the substrate.

[0209] Alternatively, the capacitor element of the present invention may be mounted on a smooth carrier such as a wafer or glass, and a circuit layer may be formed after the outer layer is formed with a resin, and then connected to a passive element or an active element.

[0210] The following contents are disclosed in this specification.

[0211] <1>

[0212] A capacitor element, wherein:

[0213] The capacitor element comprises:

[0214] A capacitor portion, comprising an anode plate, a dielectric layer and a cathode layer, wherein the anode plate has a porous portion on at least one main surface of a core portion, the dielectric layer is disposed on a surface of the porous portion, and the cathode layer is disposed on a surface of the dielectric layer;

[0215] a sealing layer configured to cover the capacitor portion;

[0216] a first through-hole conductor, which is provided to penetrate the capacitor portion and the sealing layer in the thickness direction so as to be directly electrically connected to the anode plate, and both ends of the first through-hole conductor are led out to the surface of the sealing layer;

[0217] a second through-hole conductor provided to penetrate the capacitor portion and the sealing layer in the thickness direction so as to be directly electrically connected to the cathode layer, wherein both ends of the second through-hole conductor are led out to the surface of the sealing layer;

[0218] a first external electrode layer provided on a surface of the sealing layer so as to be electrically connected to the first through-hole conductor; and

[0219] a second external electrode layer provided on the surface of the sealing layer so as to be electrically connected to the second through-hole conductor;

[0220] At least a portion of the first external electrode layer overlaps with the cathode layer in the thickness direction.

[0221] <2>

[0222] The capacitor element according to <1>, wherein:

[0223] The cathode layer, the first external electrode layer, and the second external electrode layer each include a copper layer,

[0224] When the thickness of the copper layer of the cathode layer is d1, the thickness of the copper layer of the first external electrode layer is d2, and the thickness of the copper layer of the second external electrode layer is d3,

[0225] It satisfies d1≥d2 and d1≥d3.

[0226] <3>

[0227] The capacitor element according to <1> or <2>, wherein:

[0228] When the area of ​​the first external electrode layer is S1 and the area of ​​the second external electrode layer is S2,

[0229] Satisfies S1>S2.

[0230] <4>

[0231] The capacitor element according to any one of <1> to <3>, wherein:

[0232] The capacitor element further includes an internal via conductor provided to penetrate the sealing layer in the thickness direction, one end of the internal via conductor being electrically connected to the second external electrode layer and the other end of the internal via conductor being electrically connected to the cathode layer.

[0233] <5>

[0234] The capacitor element according to any one of <1> to <4>, wherein:

[0235] The cathode layer includes: a solid electrolyte layer provided on a surface of the dielectric layer; a first conductor layer provided on a surface of the solid electrolyte layer; and a second conductor layer provided on a surface of the first conductor layer in direct electrical connection with the second through-hole conductor.

[0236] Description of Reference Numerals

[0237] 1, 2, 3, capacitor element; 10, capacitor part; 11, anode plate; 11A, core part; 11B, porous part; 12, cathode layer; 12A, solid electrolyte layer; 12B, first conductor layer; 12C, second conductor layer; 12Cu, copper layer of cathode layer; 13, dielectric layer; 20, sealing layer; 22, insulating material; 25, insulating shielding layer; 30, external electrode layer; 31, first external electrode layer; 31Cu, copper layer of first external electrode layer; 32, second external electrode layer; 32Cu, copper layer of second external electrode layer; 40, through-hole conductor; 41, first through-hole conductor; 42, second through-hole conductor; 51, first through-hole; 52, second through-hole; 53, through-hole; 60, internal passage conductor; 91, 92, resin filling part.

Claims

1. A capacitor element, wherein: The capacitor element comprises: A capacitor portion, comprising an anode plate, a dielectric layer and a cathode layer, wherein the anode plate has a porous portion on at least one main surface of a core portion, the dielectric layer is disposed on a surface of the porous portion, and the cathode layer is disposed on a surface of the dielectric layer; a sealing layer configured to cover the capacitor portion; a first through-hole conductor, which is provided to penetrate the capacitor portion and the sealing layer in the thickness direction so as to be directly electrically connected to the anode plate, and both ends of the first through-hole conductor are led out to the surface of the sealing layer; a second through-hole conductor provided to penetrate the capacitor portion and the sealing layer in the thickness direction so as to be directly electrically connected to the cathode layer, wherein both ends of the second through-hole conductor are led out to the surface of the sealing layer; a first external electrode layer provided on a surface of the sealing layer so as to be electrically connected to the first through-hole conductor; and a second external electrode layer provided on the surface of the sealing layer so as to be electrically connected to the second through-hole conductor; At least a portion of the first external electrode layer overlaps with the cathode layer in the thickness direction.

2. The capacitor element according to claim 1, wherein The cathode layer, the first external electrode layer, and the second external electrode layer each include a copper layer, When the thickness of the copper layer of the cathode layer is d1, the thickness of the copper layer of the first external electrode layer is d2, and the thickness of the copper layer of the second external electrode layer is d3, It satisfies d1≥d2 and d1≥d3.

3. The capacitor element according to claim 1 or 2, wherein: When the area of ​​the first external electrode layer is S1 and the area of ​​the second external electrode layer is S2, Satisfies S1>S2.

4. The capacitor element according to any one of claims 1 to 3, wherein The capacitor element further includes an internal via conductor provided to penetrate the sealing layer in the thickness direction, one end of the internal via conductor being electrically connected to the second external electrode layer and the other end of the internal via conductor being electrically connected to the cathode layer.

5. The capacitor element according to any one of claims 1 to 4, wherein The cathode layer includes: a solid electrolyte layer provided on the surface of the dielectric layer; a first conductor layer provided on the surface of the solid electrolyte layer; and a second conductor layer provided on the surface of the first conductor layer in direct electrical connection with the second through-hole conductor.

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