Power module
By designing the positioning groove and sintering connection layer in the double-sided heat dissipation power module, precise positioning and single-use sintering of the chip and pads are achieved, the complex process problems in the prior art are solved, and the production efficiency and manufacturing efficiency are improved.
Patent Information
- Application Number
- CN202420761456.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-10
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2034-04-10
AI Technical Summary
The production process of existing double-sided heat dissipation power modules is complex, and three sintering processes are required to avoid the deviation of the chip and pads, resulting in cumbersome process and low efficiency.
Design a power module, by opening a set position slot in the first substrate group and the second substrate group, the chip and the pad are placed into the slot for positioning, avoiding bias, and performing a sintering throughout the whole, combining the chip and the pad The sintered connecting layer between achieves one-time sintering.
The process flow is simplified, the number of sintering is reduced, the production efficiency is improved, the chip and pad shift problem is avoided, and a more efficient manufacturing process is achieved.
Smart Images
Figure CN222146192U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a power module. Background Art
[0002] In a double-sided heat dissipation power module, one side of the chip is connected to the substrate for heat conduction, and the other side of the chip is connected to another substrate through a pad for heat conduction, thereby achieving two-way heat dissipation. In order to avoid the chip and the pad from being offset, the production of a double-sided heat dissipation power module generally requires three sintering processes, one for connecting the chip to the substrate to stabilize the position of the chip, one for connecting the pad to another substrate to stabilize the position of the pad, and one for connecting the chip to the pad. The process flow is complicated. Utility Model Content
[0003] The purpose of the present application is to provide a power module, aiming to solve the technical problem of complex production process flow of double-sided heat dissipation power modules in the prior art.
[0004] To achieve the above-mentioned purpose, the technical solution adopted in the present application is: a power module, including a first substrate group, a second substrate group, a chip and a pad, the first substrate group is provided with a first positioning groove, the chip is embedded in the first positioning groove, and a first sintered connection layer is arranged between the chip and the bottom of the first positioning groove, the second substrate group is provided with a second positioning groove, the pad is embedded in the second positioning groove, and a second sintered connection layer is arranged between the pad and the bottom of the second positioning groove, the first substrate group and the second substrate group are buckled, the chip and the pad are docked, and a third sintered connection layer is arranged between the chip and the pad.
[0005] Furthermore, the four sides of the chip abut against the side walls of the first positioning groove; the four sides of the pad abut against the side walls of the second positioning groove.
[0006] Furthermore, the first substrate group is also provided with a second positioning groove, and a cushion block is also embedded in the second positioning groove of the first substrate group, and the second substrate group is also provided with a first positioning groove, and a chip is also embedded in the first positioning groove of the second substrate group.
[0007] Furthermore, the pad protrudes out of the second positioning groove to dock with the chip, and the first substrate group and the second substrate group are arranged at intervals.
[0008] Furthermore, the chip is electrically connected to the first substrate group, the chip is electrically connected to the pad, and the pad is electrically connected to the second substrate group.
[0009] Further, the first substrate group includes a first inner metal layer, a first ceramic layer and a first outer metal layer stacked in sequence, and a first positioning groove is provided on a side of the first inner metal layer facing away from the first ceramic layer;
[0010] The second substrate group includes a second inner metal layer, a second ceramic layer and a second outer metal layer which are stacked in sequence. A second positioning groove is provided on a side of the second inner metal layer which faces away from the second ceramic layer.
[0011] Furthermore, the depth of the first positioning groove is less than the thickness of the first inner metal layer; and the depth of the second positioning groove is less than the thickness of the second inner metal layer.
[0012] Furthermore, the power module also includes a package body, which covers the first substrate group, the second substrate group, the chip and the pad, and the side of the first outer metal layer facing away from the first ceramic layer is exposed outside the package body, and the side of the second outer metal layer facing away from the second ceramic layer is exposed outside the package body.
[0013] Furthermore, the power module also includes a first terminal and a second terminal, the first terminal is arranged on the first inner metal layer and electrically connected to the first inner metal layer, one end of the first terminal extends out of the package body, the second terminal is arranged on the second inner metal layer and electrically connected to the second inner metal layer, one end of the second terminal extends out of the package body.
[0014] Furthermore, the first sintered connection layer, the second sintered connection layer and the third sintered connection layer are all silver paste layers.
[0015] Compared with the prior art, the power module provided by the present application has the beneficial effect that: when manufacturing the power module, by respectively opening the first positioning groove and the second positioning groove in the first substrate group and the second substrate group, the chip and the pad are respectively placed in the first positioning groove and the second positioning groove to position the chip and the pad to avoid displacement of the chip and the pad, thereby eliminating the need to pre-sinter the first sintered connection layer and the second sintered connection layer, and the whole can be sintered once, and the first sintered connection layer, the second sintered connection layer and the third sintered connection layer can be sintered at the same time, optimizing the original three sintering processes into a one-time sintering process, greatly simplifying the process flow and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0017] Figure 1 A schematic diagram of the structure of a power module provided in an embodiment of the present application;
[0018] Figure 2 for Figure 1 A partial structural exploded view of the power module shown;
[0019] Figure 3 for Figure 1 A schematic structural diagram of a first substrate group of a power module shown;
[0020] Figure 4 for Figure 1 The schematic diagram of the structure of the second substrate group of the power module is shown.
[0021] Among them, the reference numerals in the figure are:
[0022] 10. First substrate group; 11. First inner metal layer; 12. First ceramic layer; 13. First outer metal layer; 20. Second substrate group; 21. Second inner metal layer; 22. Second ceramic layer; 23. Second outer metal layer; 30. Chip; 40. Spacer; 50. First positioning groove; 60. Second positioning groove; 70. First sintered connection layer; 80. Second sintered connection layer; 90. Third sintered connection layer; 100. First terminal; 110. Second terminal; 120. Package body; 130. Third positioning groove; 140. Fourth sintered connection layer; 150. Conductive block; 160. Fifth sintered connection layer. DETAILED DESCRIPTION
[0023] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.
[0024] In the description of the present application, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0025] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0026] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0027] Please also read Figures 1 to 4 The embodiment of the present application provides a power module, including a first substrate group 10, a second substrate group 20, a chip 30 and a pad 40. The first substrate group 10 is provided with a first positioning groove 50, the chip 30 is embedded in the first positioning groove 50, and a first sintered connection layer 70 is arranged between the chip 30 and the bottom of the first positioning groove 50. The second substrate group 20 is provided with a second positioning groove 60, the pad 40 is embedded in the second positioning groove 60, and a second sintered connection layer 80 is arranged between the pad 40 and the bottom of the second positioning groove 60. The first substrate group 10 is buckled with the second substrate group 20, the chip 30 is connected to the pad 40, and a third sintered connection layer 90 is arranged between the chip 30 and the pad 40.
[0028] When manufacturing the power module, the first positioning groove 50 and the second positioning groove 60 are respectively opened in the first substrate group 10 and the second substrate group 20, and the chip 30 and the pad 40 are respectively placed in the first positioning groove 50 and the second positioning groove 60 to position the chip 30 and the pad 40 to avoid displacement of the chip 30 and the pad 40. Therefore, there is no need to pre-sinter the first sintered connection layer 70 and the second sintered connection layer 80, but the whole can be sintered once, and the first sintered connection layer 70, the second sintered connection layer 80 and the third sintered connection layer 90 can be sintered at the same time, optimizing the original three-time sintering process into a one-time sintering process, greatly simplifying the process flow and improving production efficiency.
[0029] Specifically, the production of the power module includes the following steps:
[0030] S10 : providing a first substrate set 10 , a second substrate set 20 , a chip 30 and a spacer 40 .
[0031] S20: opening a first positioning groove 50 in the first substrate group 10 and opening a second positioning groove 60 in the second substrate group 20;
[0032] S30: a first sintered connection layer 70 is set in the first positioning groove 50, the chip 30 is placed in the first positioning groove 50 and placed on the first sintered connection layer 70; a second sintered connection layer 80 is set in the second positioning groove 60, the pad 40 is placed in the second positioning groove 60 and placed on the second sintered connection layer 80.
[0033] S40 : Arranging a third sintered connection layer 90 on a side of the chip 30 facing away from the first sintered connection layer 70 and / or a side of the spacer 40 facing away from the second sintered connection layer 80 .
[0034] S50: buckle the first substrate group 10 and the second substrate group 20, dock the chip 30 with the pad 40, connect the chip 30 and the pad 40 with the third sintered connection layer 90, obtain an assembly, pressurize and sinter the assembly, and sinter the first sintered connection layer 70, the second sintered connection layer 80 and the third sintered connection layer 90 at the same time.
[0035] The power module provided in the embodiment of the present application is a double-sided heat dissipation power module. On the one hand, the chip 30 transfers heat to the first substrate group 10 through the first sintered connection layer 70, and the first substrate group 10 dissipates the heat to the outside. On the other hand, the chip 30 transfers heat to the pad 40 through the third sintered connection layer 90, and the pad 40 then transfers heat to the second substrate group 20 through the second sintered connection layer 80, and the second substrate group 20 dissipates the heat to the outside, thereby achieving two-way heat dissipation. In addition, both the first substrate group 10 and the second substrate group 20 are provided with circuits. After the whole is pressurized and sintered, the chip 30 and the first substrate group 10 are reliably connected as a whole through the first sintered connection layer 70 and electrically connected. The pad 40 is made of conductive material, and the pad 40 and the second substrate group 20 are reliably connected as a whole through the second sintered connection layer 80 and electrically connected. The chip 30 and the pad 40 are reliably connected as a whole through the third sintered connection layer 90 and electrically connected.
[0036] In one embodiment, the first sintered connection layer 70, the second sintered connection layer 80 and the third sintered connection layer 90 are all silver paste layers, which have the advantages of good electrical conductivity, corrosion resistance, strong adhesion, good thermal conductivity, etc. When manufacturing a power module, firstly, a silver paste layer is applied in the first positioning groove 50 to form the first sintered connection layer 70, and a silver paste layer is applied in the second positioning groove 60 to form the second sintered connection layer 80, and then the chip 30 is placed in the first positioning groove 50 and placed on the first sintered connection layer 70, and the pad 40 is placed in the second positioning groove 60 and placed on the second sintered connection layer 80, and then a silver paste layer is applied on the side of the chip 30 facing away from the first sintered connection layer 70 and / or the side of the pad 40 facing away from the second sintered connection layer 80 to form the third sintered connection layer 90, and then the first substrate group 10 and the second substrate group 20 are buckled together, so that the third sintered connection layer 90 connects the chip 30 and the pad 40.
[0037] Specifically, when a silver paste layer is applied in the first positioning groove 50 to form the first sintered connection layer 70, it is necessary to evaporate the organic matter in the first sintered connection layer 70 so that the first sintered connection layer 70 is fixed, and the first sintered connection layer 70 is heated to enhance the adhesion between the first sintered connection layer 70 and the first substrate group 10, so as to achieve basic fixation of the chip 30 and the first substrate group 10, so that the chip 30 is not easily separated from the first sintered connection layer 70 or even out of the first positioning groove 50. Similarly, when a silver paste layer is applied in the second positioning groove 60 to form the second sintered connection layer 80, it is necessary to evaporate the organic matter in the second sintered connection layer 80 so that the second sintered connection layer 80 is fixed, and the second sintered connection layer 80 is heated to enhance the adhesion between the second sintered connection layer 80 and the second substrate group 20, so as to achieve basic fixation of the pad 40 and the second substrate group 20.
[0038] In one embodiment, the four sides of the chip 30 abut against the side walls of the first positioning groove 50; the four sides of the cushion block 40 abut against the side walls of the second positioning groove 60. The first positioning groove 50 is set according to the shape and size of the chip 30, so that the shape of the first positioning groove 50 is adapted to the shape of the chip 30, and the size of the first positioning groove 50 is adapted to the size of the chip 30, so that when the chip 30 is placed in the first positioning groove 50, the side walls of the first positioning groove 50 can abut against the four sides of the chip 30, effectively avoiding the chip 30 from being offset, and achieving accurate positioning of the chip 30. Similarly, the second positioning groove 60 is set according to the shape and size of the cushion block 40, so that the shape of the second positioning groove 60 is adapted to the shape of the cushion block 40, and the size of the second positioning groove 60 is adapted to the size of the cushion block 40, so that when the cushion block 40 is placed in the second positioning groove 60, the side walls of the second positioning groove 60 can abut against the four sides of the cushion block 40, effectively avoiding the cushion block 40 from being offset, and achieving accurate positioning of the cushion block 40.
[0039] In one embodiment, please refer to Figures 1 to 4 , the pad 40 protrudes out of the second positioning groove 60 and is connected to the chip 30, so that the first substrate group 10 is spaced from the second substrate group 20. The depth of the first positioning groove 50 can be equal to the thickness of the chip 30, or slightly less than the thickness of the chip 30, or slightly greater than the thickness of the chip 30. The thickness of the pad 40 is greater than the thickness of the chip 30, and greater than the thickness of the second positioning groove 60. The pad 40 protrudes out of the second positioning groove 60 and is connected to the chip 30, so that the first substrate group 10 is spaced from the second substrate group 20, so that during subsequent packaging, the packaging material can enter between the first substrate group 10 and the second substrate group 20, cover the sides of the first substrate group 10 and the second substrate group 20 facing each other, and cover the chip 30 and the pad 40.
[0040] In one embodiment, the first substrate group 10 and the second substrate group 20 are of the same size. When the first substrate group 10 and the second substrate group 20 are snapped together and the four edges of the first substrate group 10 are flush with the four edges of the second substrate group 20, the chip 30 and the pad 40 can be aligned so as to be connected through the third sintered connection layer 90.
[0041] In one embodiment, in combination Figure 3 and Figure 4 As shown, the first substrate group 10 is also provided with a second positioning groove 60, and the second substrate group 20 is also provided with a first positioning groove 50. A second sintering connection layer 80 is also provided in the second positioning groove 60 of the first substrate group 10, and a pad 40 is also embedded in the second positioning groove 60 of the first substrate group 10, and the pad 40 is placed on the second sintering connection layer 80; a first sintering connection layer 70 is also provided in the first positioning groove 50 of the second substrate group 20, and a chip 30 is also embedded in the first positioning groove 50 of the second substrate group 20, and the chip 30 is placed on the first sintering connection layer 70, and a third sintering connection layer 90 is also provided between the chip 30 and the pad 40 in the second positioning groove 60 of the first substrate group 10. The number of the first positioning grooves 50 and the second positioning grooves 60 provided in the first substrate group 10 is not limited, and can be single or multiple. The number of the first positioning grooves 50 provided in the second substrate group 20 is the same as the number of the second positioning grooves 60 provided in the first substrate group 10, and they correspond one to one. The number of the second positioning grooves 60 provided in the second substrate group 20 is the same as the number of the first positioning grooves 50 provided in the first substrate group 10, and they correspond one to one. The types of the chips 30 in each first positioning groove 50 can be the same or different.
[0042] By setting a plurality of first positioning grooves 50 and a second positioning groove 60, a plurality of chips 30 can be packaged at the same time. When the assembly is sintered, on the one hand, the first sintered connection layer 70, the second sintered connection layer 80 and the third sintered connection layer 90 can be sintered at the same time. On the other hand, a plurality of first sintered connection layers 70, a plurality of second sintered connection layers 80 and a plurality of third sintered connection layers 90 can be sintered at the same time without sintering one by one, which greatly simplifies the process flow and improves the production efficiency. By distributing a plurality of first positioning grooves 50 in the first substrate group 10 and the second substrate group 20 and distributing a plurality of second positioning grooves 60 in the first substrate group 10 and the second substrate group 20, that is, a part of the chips 30 are installed on the first substrate group 10 and another part of the chips 30 are installed on the second substrate group 20, it is beneficial to evenly distribute the heat of the chips 30 to the first substrate group 10 and the second substrate group 20, thereby improving the heat dissipation efficiency of the power module.
[0043] The type of the chip 30 is not specifically limited, and may be a diode, an insulated gate bipolar transistor (IGBT), a metal-oxide-semiconductor field effect transistor (MOS), etc. For example, the chip 30 disposed in the first positioning groove 50 of the first substrate group 10 is a diode, and the chip 30 disposed in the first positioning groove 50 of the second substrate group 20 is an IGBT. Figure 2 and Figure 3 As shown, the first substrate group 10 is provided with a third positioning groove 130 in addition to the second positioning groove 60 for placing the pad 40, and a fourth sintered connection layer 140 is arranged in the third positioning groove 130. The power module also includes a conductive block 150, which is arranged in the third positioning groove 130 and placed on the fourth sintered connection layer 140. A fifth sintered connection layer 160 is arranged between the conductive block 150 and the gate of the IGBT.
[0044] In one embodiment, Figure 3 As shown, the first substrate group 10 includes a first inner metal layer 11, a first ceramic layer 12 and a first outer metal layer 13 stacked in sequence, and a first positioning groove 50 is provided on the side of the first inner metal layer 11 facing away from the first ceramic layer 12; Figure 4 As shown, the second substrate group 20 includes a second inner metal layer 21 , a second ceramic layer 22 and a second outer metal layer 23 stacked in sequence, and a second positioning groove 60 is provided on a side of the second inner metal layer 21 facing away from the second ceramic layer 22 .
[0045] The first substrate group 10 is composed of a first inner metal layer 11, a first ceramic layer 12 and a first outer metal layer 13 stacked in sequence, which can greatly improve the thermal conductivity efficiency. The first inner metal layer 11 is provided with a first positioning groove 50 for fixing the chip 30, directly conducting heat with the chip 30 and electrically connected. It should be noted that the depth of the first positioning groove 50 is less than the thickness of the first inner metal layer 11, that is, the first positioning groove 50 does not penetrate the first inner metal layer 11, so as to ensure that the chip 30 can establish an electrical connection with the bottom of the first positioning groove 50, and also avoid direct contact between the chip 30 and the first ceramic layer 12. The first ceramic layer 12 is located between the first inner metal layer 11 and the first outer metal layer 13, and plays an insulating role to prevent the first outer metal layer 13 from being charged. The first outer metal layer 13 is used to dissipate heat to the outside. The first outer metal layer 13 and the first inner metal layer 11 are respectively arranged on opposite sides of the first ceramic layer 12, so that the thermal expansion coefficients of the two opposite surfaces of the first substrate group 10 are basically the same, so that the first substrate group 10 is not prone to warping after being heated, thereby ensuring that the first ceramic layer 12 will not break due to warping.
[0046] Similarly, the second substrate group 20 is composed of a second inner metal layer 21, a second ceramic layer 22 and a second outer metal layer 23 stacked in sequence, which can greatly improve the thermal conductivity. The second inner metal layer 21 is provided with a second positioning groove 60 for fixing the pad 40, directly conducting heat and electrically connecting with the pad 40. It should be noted that the depth of the second positioning groove 60 is less than the thickness of the second inner metal layer 21, that is, the second positioning groove 60 does not penetrate the second inner metal layer 21, so as to ensure that the pad 40 can establish an electrical connection with the bottom of the second positioning groove 60, and also avoid direct contact between the pad 40 and the second ceramic layer 22. The second ceramic layer 22 is located between the second inner metal layer 21 and the second outer metal layer 23, and plays an insulating role to prevent the second outer metal layer 23 from being charged. The second outer metal layer 23 and the second inner metal layer 21 are respectively arranged on opposite sides of the second ceramic layer 22, so that the thermal expansion coefficients of the two opposite surfaces of the second substrate group 20 are substantially the same, so that the second substrate group 20 is not prone to warping after being heated, and it is ensured that the second ceramic layer 22 will not break due to warping. The second outer metal layer 23 is used to dissipate heat to the outside. The side of the first outer metal layer 13 facing away from the first ceramic layer 12 and the side of the second outer metal layer 23 facing away from the second ceramic layer 22 can be used to connect to a heat sink to improve heat dissipation efficiency.
[0047] In one embodiment, Figure 1 As shown, the power module further includes a package 120, which covers the first substrate group 10, the second substrate group 20, the chip 30 and the pad 40. The first substrate group 10 and the second substrate group 20 are buckled together, and the third sintered connection layer 90 connects the chip 30 and the pad 40 to obtain a combination, and the combination is plastic-sealed to form the package 120 outside the combination. The package 120 plays the role of insulation, isolation from oxygen and water vapor, etc., and can protect the chip 30, the first substrate group 10 and the circuit of the second substrate group 20. Specifically, the side of the first outer metal layer 13 facing away from the first ceramic layer 12 is exposed outside the package 120 for heat dissipation to the outside, and the side of the second outer metal layer 23 facing away from the second ceramic layer 22 is exposed outside the package 120 for heat dissipation to the outside.
[0048] In one embodiment, Figure 1As shown, the power module also includes a first terminal 100 and a second terminal 110. The first terminal 100 is arranged on the first inner metal layer 11 and is electrically connected to the first inner metal layer 11. One end of the first terminal 100 extends out of the package body 120 for connecting to an external circuit, thereby realizing the electrical connection between the first inner metal layer 11 and the external circuit; the second terminal 110 is arranged on the second inner metal layer 21 and is electrically connected to the second inner metal layer 21. One end of the second terminal 110 extends out of the package body 120 for connecting to an external circuit, thereby realizing the electrical connection between the second inner metal layer 21 and the external circuit. The first terminal 100 can be connected to the first inner metal layer 11 by ultrasonic bonding, and the second terminal 110 can be connected to the second inner metal layer 21 by ultrasonic bonding. Specifically, the first terminal 100 is a signal terminal for inputting a driving signal or providing a sensing signal such as voltage, current, and temperature, and the second terminal 110 is a driving terminal for inputting and outputting alternating current and direct current to realize energy conversion.
[0049] The production of power modules includes the following steps:
[0050] S10 : providing a first substrate set 10 , a second substrate set 20 , a chip 30 and a spacer 40 .
[0051] S20: opening a first positioning groove 50 in the first substrate group 10 and opening a second positioning groove 60 in the second substrate group 20;
[0052] S30: a first sintered connection layer 70 is set in the first positioning groove 50, the chip 30 is placed in the first positioning groove 50 and placed on the first sintered connection layer 70; a second sintered connection layer 80 is set in the second positioning groove 60, the pad 40 is placed in the second positioning groove 60 and placed on the second sintered connection layer 80.
[0053] S35 : providing a first terminal 100 and a second terminal 110 , disposing the first terminal 100 on the first substrate group 10 , and disposing the second terminal 110 on the second substrate group 20 .
[0054] S40 : Arranging a third sintered connection layer 90 on a side of the chip 30 facing away from the first sintered connection layer 70 and / or a side of the spacer 40 facing away from the second sintered connection layer 80 .
[0055] S50: buckle the first substrate group 10 and the second substrate group 20, dock the chip 30 with the pad 40, connect the chip 30 and the pad 40 with the third sintered connection layer 90, obtain an assembly, pressurize and sinter the assembly, and sinter the first sintered connection layer 70, the second sintered connection layer 80 and the third sintered connection layer 90 at the same time.
[0056] S60: Plastic-encapsulating the assembly to form a packaging body 120 outside the assembly.
[0057] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims
1. A power module, characterized in that: It includes a first substrate group, a second substrate group, a chip and a pad. The first substrate group is provided with a first positioning groove, the chip is embedded in the first positioning groove, and a first sintered connection layer is arranged between the chip and the bottom of the first positioning groove. The second substrate group is provided with a second positioning groove, the pad is embedded in the second positioning groove, and a second sintered connection layer is arranged between the pad and the bottom of the second positioning groove. The first substrate group and the second substrate group are buckled, the chip is connected to the pad, and a third sintered connection layer is arranged between the chip and the pad.
2. The power module according to claim 1, characterized in that: The four sides of the chip abut against the side walls of the first positioning groove; the four sides of the cushion block abut against the side walls of the second positioning groove.
3. The power module according to claim 1, characterized in that: The first substrate group is also provided with the second positioning groove, and the cushion block is also embedded in the second positioning groove of the first substrate group. The second substrate group is also provided with the first positioning groove, and the chip is also embedded in the first positioning groove of the second substrate group.
4. The power module according to claim 1, characterized in that: The pad protrudes out of the second positioning groove and is connected to the chip, so that the first substrate group is spaced apart from the second substrate group.
5. The power module according to any one of claims 1 to 4, characterized in that: The chip is electrically connected to the first substrate group, the chip is electrically connected to the pad, and the pad is electrically connected to the second substrate group.
6. The power module according to any one of claims 1 to 4, characterized in that: The first substrate group includes a first inner metal layer, a first ceramic layer and a first outer metal layer stacked in sequence, and the first inner metal layer is provided with the first positioning groove on a side facing away from the first ceramic layer; The second substrate group includes a second inner metal layer, a second ceramic layer and a second outer metal layer stacked in sequence, and the second positioning groove is provided on a side of the second inner metal layer facing away from the second ceramic layer.
7. The power module according to claim 6, characterized in that: The depth of the first positioning groove is less than the thickness of the first inner metal layer; the depth of the second positioning groove is less than the thickness of the second inner metal layer.
8. The power module according to claim 7, characterized in that: The power module also includes a package body, which covers the first substrate group, the second substrate group, the chip and the pad, and the first outer metal layer is exposed outside the package body on a side facing away from the first ceramic layer, and the second outer metal layer is exposed outside the package body on a side facing away from the second ceramic layer.
9. The power module according to claim 8, characterized in that: The power module also includes a first terminal and a second terminal, the first terminal is arranged on the first inner metal layer and electrically connected to the first inner metal layer, one end of the first terminal extends out of the package body, the second terminal is arranged on the second inner metal layer and electrically connected to the second inner metal layer, one end of the second terminal extends out of the package body.
10. The power module according to any one of claims 1 to 4, characterized in that: The first sintered connection layer, the second sintered connection layer and the third sintered connection layer are all silver paste layers.