Carrier separation mechanism of plasma processing system
The carrier separation mechanism addresses the challenge of separating substrates from electrodes by employing a two-stage separation process with an auxiliary member and heat dissipation, ensuring efficient and damage-free removal of substrates from plasma process chambers.
Patent Information
- Application Number
- CN202420561496.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-21
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2034-03-21
AI Technical Summary
The high viscosity of adhesives used to prevent circuit boards from warping during plasma processes makes it difficult to separate the boards from the lower electrode without causing damage.
A carrier separation mechanism with an auxiliary separation member featuring ribs and a second electrode plate, allowing for a two-stage separation process, including a first separation using ribs to drive the substrate away from the working area and a second separation assisted by a robot arm, combined with a heat dissipation system to manage thermal stress.
Reduces the difficulty and risk of damage during substrate separation by enhancing adhesion and enabling efficient heat dissipation, facilitating quick and damage-free peeling of substrates from the electrode.
Smart Images
Figure CN222168324U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a carrier separation mechanism, and more particularly to a carrier separation mechanism for a plasma process system. Background Art
[0002] With the changes of the times, the technology industry is also making progress, especially the semiconductor industry is becoming more and more mature. In the semiconductor industry, the process of wafers and circuit boards requires surface cleaning and etching of the objects to be processed. In addition to the commonly known dry etching and wet etching technologies, plasma process technology also has a place in the semiconductor and circuit board industries.
[0003] During the plasma process, the circuit board may warp due to heat factors. Therefore, the circuit board is usually fixed in the plasma process chamber by clamping and stretching, or adhered to the lower electrode by additional adhesives to prevent the circuit board from warping.
[0004] Among them, in order to adapt to the high temperature plasma process, the viscosity of the adhesive on the circuit board also needs to be increased accordingly. However, although the adhesive can prevent the circuit board from warping, the high viscosity adhesive also makes it more difficult to separate the subsequent circuit board from the lower electrode, making the circuit board prone to damage during the separation process. Utility Model Content
[0005] The main purpose of the present application is to solve the problem that the viscosity of the adhesive adhered to the substrate to be processed is too high, resulting in the substrate to be processed being difficult to separate from the lower electrode plate.
[0006] To achieve the above-mentioned purpose, an embodiment of the present application provides a carrier separation mechanism of a plasma process system, which is arranged in a vacuum plasma process chamber and is used to perform a plasma process on a substrate to be processed. A first electrode is arranged in the vacuum plasma process chamber, and the carrier separation mechanism includes an auxiliary separation member and a second electrode plate. The auxiliary separation member has a plurality of ribs; the second electrode plate is arranged corresponding to the first electrode, and a plasma process space is formed between the second electrode plate and the first electrode. The surface of the second electrode plate adjacent to the plasma process space has a receiving groove and a working area, and the shape and size of the receiving groove correspond to the ribs so as to accommodate the ribs; wherein the carrier separation mechanism has a connection state and a separation state, in which the ribs of the auxiliary separation member are accommodated in the receiving groove, and the ribs and the working area form an adhesion plane for the substrate to be processed to adhere; in the separation state, the ribs of the auxiliary separation member are separated from the receiving groove, and the substrate to be processed is driven by the ribs and away from the working area of the second electrode plate.
[0007] In another embodiment of the present application, a fixing member is further included, which is disposed on the periphery of the auxiliary separation member and is used to fix the position of the auxiliary separation member.
[0008] In another embodiment of the present application, the fixing member has a fixing portion, the fixing portion is clamped on the periphery of the auxiliary separation member, and the material of the fixing portion is an insulating material.
[0009] In another embodiment of the present application, a control device is provided on a side of the second electrode plate away from the plasma process space. The control device controls the second electrode plate to move between a process position and a separation position along a vertical direction. When the second electrode plate moves from the process position to the separation position, the ribs detach from the accommodating groove, and the substrate to be processed is driven by the ribs and away from the working area of the second electrode plate.
[0010] In another embodiment of the present application, the rib includes a plurality of first ribs arranged in parallel and at intervals.
[0011] In another embodiment of the present application, the ribs include a plurality of second ribs arranged in parallel and at intervals, and the second ribs intersect the first ribs vertically, so that the auxiliary separation member forms a mesh structure, wherein the accommodating grooves correspond to the settings of the first ribs and the second ribs, so that the working area is divided into a plurality of independent working parts.
[0012] In another embodiment of the present application, the second electrode plate further has at least one gas inlet disposed in the working area, and the at least one gas inlet inputs a heat dissipation gas into the working area to assist the substrate to be processed in heat dissipation.
[0013] In another embodiment of the present application, a first airflow groove is recessed in the working area, and a second airflow groove is recessed in the auxiliary separation piece corresponding to the first airflow groove. The first airflow groove and the second airflow groove are interconnected to form an airflow channel, which is used to allow the heat dissipation gas to circulate.
[0014] In another embodiment of the present application, the intersection of the air flow channels is located in the working area.
[0015] In another embodiment of the present application, the second electrode plate further has at least one exhaust port disposed in the working area, and the at least one exhaust port receives the heat dissipation gas through the air flow channel to recover the heat dissipation gas.
[0016] In another embodiment of the present application, the first air flow groove and the second air flow groove have a recessed height, and the recessed height is between 0.1 mm and 0.4 mm.
[0017] In another embodiment of the present application, the second electrode plate also has at least one gas inlet arranged in the working area. The working area is recessed with a first air flow groove to form an air flow channel. The at least one gas inlet inputs a heat dissipation gas into the working area and circulates in the air flow channel to assist in heat dissipation of the substrate to be processed.
[0018] In another embodiment of the present application, the second electrode plate further has at least one exhaust port disposed in the working area, and the at least one exhaust port receives the heat dissipation gas through the air flow channel to recover the heat dissipation gas.
[0019] In addition, the present application also provides a carrier separation method of a plasma process system, which performs a plasma process on a substrate to be processed in a vacuum plasma process chamber, wherein a first electrode is provided in the vacuum plasma process chamber, and the carrier separation method includes an adhesion step, a first separation step, and a second separation step. Adhesion step: accommodating a plurality of ribs of an auxiliary separation member in a receiving groove of a second electrode plate, so that the ribs and a working area of the second electrode plate form an adhesion plane, and an adhesive layer of the substrate to be processed is adhered to the adhesion plane, so as to perform a plasma process on the substrate to be processed; first separation step: detaching the ribs from the receiving groove, so that the substrate to be processed is driven away from the working area by the ribs; second separation step: detaching the substrate to be processed from the ribs.
[0020] In another embodiment of the present application, in the first separation step, the second electrode plate is moved vertically from a process position to a separation position by a control device, so that the ribs are separated from the accommodating grooves and the substrate to be processed is driven by the ribs away from the working area.
[0021] In another embodiment of the present application, an adhesive removal step is further included: removing the adhesive layer of the substrate to be processed.
[0022] In another embodiment of the present application, the viscosity of the adhesive layer on one side close to the substrate to be processed is greater than the viscosity of the adhesive layer on the other side away from the substrate to be processed.
[0023] Thus, the present application performs a two-stage separation step on the substrate to be processed by using an auxiliary separation member, thereby reducing the difficulty of separating the substrate to be processed and the second electrode plate, and preventing the substrate to be processed from being damaged during the separation process. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a schematic diagram of the implementation state of the carrier separation mechanism of the plasma process system of the embodiment of the present application, which is used to indicate that the present application is arranged in a vacuum plasma process chamber;
[0025] Figure 2 is a three-dimensional schematic diagram of the appearance of a carrier separation mechanism of a plasma process system according to the first embodiment of the present application;
[0026] Figure 3A is a three-dimensional exploded schematic diagram of a carrier separation mechanism of a plasma process system according to a first embodiment of the present application;
[0027] Figure 3B yes Figure 3A A local enlarged schematic diagram of point A;
[0028] Figure 3C yes Figure 3A A local enlarged schematic diagram of point B;
[0029] Figure 4 is a cross-sectional schematic diagram of a carrier separation mechanism of a plasma process system according to a first embodiment of the present application, used to illustrate the carrier separation mechanism in a connected state;
[0030] Figure 5 yes Figure 4 A partial enlarged schematic diagram is used to illustrate the connection relationship between the auxiliary separator and the second electrode plate;
[0031] Figure 6 is a cross-sectional schematic diagram of a carrier separation mechanism of a plasma process system according to a first embodiment of the present application, and is used to show that the carrier separation mechanism is in a separation state;
[0032] Figure 7 yes Figure 6 A partial enlarged schematic diagram is used to illustrate the separation relationship between the auxiliary separation member and the second electrode plate;
[0033] Figure 8 is a schematic diagram of a carrier separation mechanism of a plasma process system according to a first embodiment of the present application, viewed from a top view;
[0034] Fig. 9 yes Figure 8 A partial enlarged schematic diagram of the central part of;
[0035] Fig.10 yes Figure 8 A local enlarged schematic diagram of the edge portion;
[0036] Fig.11 It is a schematic flow chart of a carrier separation method of a plasma process system according to the first embodiment of the present application.
[0037] Description of Reference Numerals
[0038] 1: Vacuum plasma process chamber 1a: Entrance and exit
[0039] 2: substrate to be processed 2a: adhesive layer
[0040] 100: carrier separation mechanism 200: first electrode
[0041] 300: plasma process space 10: auxiliary separation parts
[0042] 11: Rib 111: First Rib
[0043] 112: second rib 12: second air flow groove
[0044] 20: Second electrode plate 21: Accommodation groove
[0045] 22: Work Area 221: Work Department
[0046] 222: gas delivery port 223: first air flow slot
[0047] 224: Air extraction port 30: Control device
[0048] 40: fixing member 41: fixing part
[0049] P1: Processing position P2: Separation position
[0050] M1: connected state M2: separated state
[0051] B: intersection F: adhesion plane
[0052] S1: Adhesion step S2: First separation step
[0053] S3: Second separation step S4: Adhesive removal step. DETAILED DESCRIPTION
[0054] In order to facilitate the description of the central idea of the present application in the above utility model content column, it is now expressed in a specific embodiment. Various objects in the embodiment are drawn in proportions suitable for enumeration and description, rather than in proportions of actual components.
[0055] See also Figures 1 to 11 As shown, the carrier separation mechanism 100 of the plasma process system of the embodiment of the present application is disclosed, which is arranged in a vacuum plasma process chamber 1 and is used to perform a plasma process on a substrate 2 to be processed. A first electrode 200 is arranged in the vacuum plasma process chamber 1, and the carrier separation mechanism 100 includes an auxiliary separation member 10 and a second electrode plate 20. Among them, the substrate 2 to be processed has an adhesive layer 2a; the substrate 2 to be processed can be a circuit composite board (such as PCB, FPC, etc.), a wafer or a chip, etc. Any object that needs to be subjected to plasma cleaning, etching, and coating processes can be the substrate 2 to be processed described in the present utility model.
[0056] like Figure 1 and Figure 2 As shown, in the embodiment of the present application, the vacuum plasma process chamber 1 is a single chamber, which only uses one entrance and exit 1a to input and output the substrate 2 to be processed. In other embodiments, the vacuum plasma process chamber 1 can also be a plurality of connected chambers, each of which has an entrance and an exit on the left and right sides, respectively, so that the substrate 2 to be processed can be continuously processed in the chamber through the conveying mechanism of the chamber.
[0057] The auxiliary separation member 10 has a plurality of ribs 11. The plurality of ribs 11 include a plurality of first ribs 111 arranged in parallel and spaced apart, so that the auxiliary separation member 10 forms a stripe-like structure, thereby increasing the adhesion area between the auxiliary separation member 10 and the substrate 2 to be processed. Furthermore, the plurality of ribs 11 also include a plurality of second ribs 112 arranged in parallel and spaced apart, and the plurality of second ribs 112 intersect the plurality of first ribs 111 vertically, so that the auxiliary separation member 10 forms a mesh structure, thereby further increasing the adhesion area between the auxiliary separation member 10 and the substrate 2 to be processed, and reducing the probability of displacement of the substrate 2 to be processed during movement.
[0058] The second electrode plate 20 is disposed corresponding to the first electrode 200, and a plasma process space 300 is formed between the second electrode plate 20 and the first electrode 200. The surface of the second electrode plate 20 adjacent to the plasma process space 300 has a receiving groove 21 and a working area 22. The shape and size of the receiving groove 21 correspond to the plurality of ribs 11 and can accommodate the plurality of ribs 11. The receiving groove 21 corresponds to the arrangement of the first rib 111 and the second rib 112, so that the working area 22 is divided into a plurality of independent working parts 221.
[0059] Please refer to Figures 4 to 7 As shown, in the embodiment of the present application, the carrier separation mechanism 100 has a connection state M1 (eg Figure 4 and Figure 5 ) and a separation state M2 (such as Figure 6 and Figure 7 ). In the connection state M1, the multiple ribs 11 of the auxiliary separation member 10 are accommodated in the receiving groove 21, and the multiple ribs 11 and the working area 22 form an adhesion plane F for the substrate 2 to be processed to adhere; in the separation state M2, the multiple ribs 11 of the auxiliary separation member 10 are separated from the receiving groove 21, and the substrate 2 to be processed is driven by the multiple ribs 11 and moves away from the working area 22 of the second electrode plate 20.
[0060] In the embodiment of the present application, a control device 30 is provided on a side of the second electrode plate 20 away from the plasma process space 300, and the control device 30 is used to control the second electrode plate 20 to move between a process position P1 and a separation position P2 along a vertical direction. When the substrate 2 to be processed completes the process in the vacuum plasma process chamber 1, the control device 30 can control the second electrode plate 20 to move from the process position P1 to the separation position P2, thereby making the multiple ribs 11 detach from the accommodating groove 21, and the substrate 2 to be processed is driven by the multiple ribs 11 and away from the working area 22 of the second electrode plate 20, so that the carrier separation mechanism 100 is changed from the connection state M1 to the separation state M2, so that the substrate 2 to be processed can be detached from the second electrode plate 20 and continue to be processed in the subsequent process.
[0061] In addition, in other embodiments of the present application, the user can also switch the connection state M1 and the separation state M2 of the carrier separation mechanism 100 by mechanical improvement, such as by moving the auxiliary separation member 10 alone, or by moving the auxiliary separation member 10 and the second electrode plate 20 at the same time. In this way, the user can switch the action mode of the auxiliary separation member 10 and the second electrode plate 20 at any time according to actual conditions.
[0062] Please refer to Figures 8 to 10 As shown, in the embodiment of the present application, the second electrode plate 20 further has at least one gas delivery port 222 disposed in the working area 22, and the gas delivery port 222 inputs a heat dissipation gas into the working area 22 to assist the substrate 2 to be processed in heat dissipation. The heat dissipation gas can escape from the periphery of the second electrode plate 20.
[0063] In the embodiment of the present application, the working area 22 is provided with a first airflow groove 223, and the auxiliary separation member 10 is provided with a second airflow groove 12 corresponding to the first airflow groove 223. The first airflow groove 223 and the second airflow groove 12 are connected to each other to form an airflow channel, and the airflow channel is used to allow the heat dissipation gas to flow, so that when the heat dissipation gas flows through the airflow channel, it will directly contact the substrate 2 to be processed, and can directly take away the heat energy generated by the substrate 2 to be processed during the process, so as to achieve the purpose of enhancing the heat dissipation efficiency. Among them, the first airflow groove 223 and the second airflow groove 12 have a recessed height, and the recessed height is between 0.1mm and 0.4mm, for example, it can be 0.1mm, 0.2mm, 0.3mm and 0.4mm; the intersection B of the airflow channel is located in the working area 22, and not on the rib 11, so as to avoid the situation where the substrate 2 to be processed is separated from the rib 11 due to the large gap.
[0064] Please refer to Fig.10 As shown, in the embodiment of the present application, the second electrode plate 20 also has at least one exhaust port 224 arranged in the working area 22, and the exhaust port 224 receives the heat dissipation gas through the air flow channel to recover the heat dissipation gas, thereby reducing the probability of the heat dissipation gas having an adverse effect on the process.
[0065] See also Figures 4 to 7 As shown, in the embodiment of the present application, a fixing member 40 is further included, which is disposed on the periphery of the auxiliary separation member 10 and is used to fix the position of the auxiliary separation member 10. The fixing member 40 has a fixing portion 41, which is clamped on the periphery of the auxiliary separation member 10, and the fixing portion 41 is made of an insulating material. Since the fixing portion 41 is made of a non-conductive insulating material such as ceramic, the fixing portion 41 does not affect the process of the substrate 2 to be processed.
[0066] In order to achieve the aforementioned object, the present application also provides a carrier separation method for a plasma process system, which comprises the following steps:
[0067] An adhesion step S1: accommodating the plurality of ribs 11 of the auxiliary separation member 10 in the accommodating groove 21 of the second electrode plate 20, so that the plurality of ribs 11 and the working area 22 of the second electrode plate 20 form an adhesion plane F, and adhering the adhesive layer 2a of the substrate 2 to be processed on the adhesion plane F, so as to perform a plasma process on the substrate 2 to be processed. Figures 1 to 4 As shown, the substrate 2 to be processed is placed on the adhesion plane F by a robot arm (not shown) through the entrance 1a. In one embodiment, the viscosity of the adhesive layer 2a on the side close to the substrate 2 to be processed is greater than the viscosity of the other side of the adhesive layer 2a away from the substrate 2 to be processed. Thereby, when the substrate 2 to be processed is separated from the adhesion plane F, it can be ensured that the adhesive layer 2a will stay on the substrate 2 to be processed and will not adhere to the adhesion plane F.
[0068] A first separation step S2: the plurality of ribs 11 are separated from the accommodating grooves 21, so that the substrate 2 to be processed is driven by the plurality of ribs 11 and moves away from the working area 22. Thus, in the first separation step S2, the auxiliary separation member 10 can firstly perform a large-scale peeling of the substrate 2 to be processed, thereby reducing the difficulty of subsequent peeling of the substrate 2 to be processed and reducing the probability of the substrate 2 to be processed being damaged during the peeling process.
[0069] In this embodiment, the second electrode plate 20 is moved vertically from the process position P1 to the separation position P2 by the control device 30 , so that the ribs 11 are separated from the receiving grooves 21 and the substrate 2 to be processed is driven by the ribs 11 away from the working area 22 .
[0070] A second separation step S3: separating the substrate 2 to be processed from the plurality of ribs 11. The substrate 2 to be processed can be separated from the ribs 11 by clamping, adsorption, etc. of a robot arm, and since the contact area between the substrate 2 to be processed and the ribs 11 is small, the robot arm can quickly and easily peel the substrate 2 to be processed from the ribs 11 without damaging the substrate 2 to be processed.
[0071] In addition, in the embodiment of the present application, an adhesive removal step S4 is also included: removing the adhesive layer 2 a of the substrate 2 to be processed.
[0072] Therefore, this application has the following advantages:
[0073] 1. The present application uses the auxiliary separation member 10 to perform a two-stage separation step on the substrate 2 to be processed, thereby reducing the difficulty of separating the substrate 2 to be processed and the second electrode plate 20 and preventing the substrate 2 to be processed from being damaged during the separation process.
[0074] 2. The auxiliary separation member 10 of the present application is mesh-shaped, so in the second separation step S3, since the contact area between the substrate 2 to be processed and the ribs 11 is small, the substrate 2 to be processed can be peeled off from the ribs 11 very quickly and easily, and the probability of the substrate 2 to be processed being damaged is reduced.
[0075] 3. The material of the fixing member 40 of the present application is a non-conductive material such as ceramic, so the fixing member 40 does not affect the processing of the substrate 2 to be processed.
[0076] 4. The present application adopts the design of the gas supply port 222, the gas exhaust port 224 and the air flow channel, so that the present application can achieve the purpose of enhancing the heat dissipation efficiency through the flow of the heat dissipation gas in the air flow channel.
[0077] 5. The intersection B of the air flow channel of the present application is located in the working area 22, but not on the rib 11, so as to avoid the situation where the substrate 2 to be processed is separated from the rib 11 due to the large gap on the rib 11.
[0078] Although the present application is described with a preferred embodiment, those skilled in the art can make various changes without departing from the spirit and scope of the present invention. The above embodiments are only used to illustrate the present invention, not to limit the scope of the present invention. All modifications or changes that do not violate the spirit of the present invention are within the scope of the patent application of the present invention.
Claims
1. A carrier separation mechanism for a plasma process system, characterized in that: The carrier separation mechanism is disposed in a vacuum plasma process chamber and is used to perform a plasma process on a substrate to be processed. A first electrode is disposed in the vacuum plasma process chamber. The carrier separation mechanism includes: an auxiliary separation member having a plurality of ribs; and A second electrode plate is disposed corresponding to the first electrode, and a plasma process space is formed between the second electrode plate and the first electrode. The surface of the second electrode plate adjacent to the plasma process space has a receiving groove and a working area. The shape and size of the receiving groove correspond to the ribs so as to accommodate the ribs. In which, the carrier separation mechanism has a connected state and a separated state. In the connected state, the ribs of the auxiliary separation member are accommodated in the accommodating groove, and these ribs form an adhesion plane with the working area for the substrate to be processed to adhere; in the separated state, the ribs of the auxiliary separation member are separated from the accommodating groove, and these ribs drive the substrate to be processed away from the working area of the second electrode plate.
2. The carrier separation mechanism of the plasma process system according to claim 1, characterized in that: The utility model also comprises a fixing member which is arranged on the periphery of the auxiliary separation member.
3. The carrier separation mechanism of the plasma process system according to claim 2, characterized in that: The fixing piece has a fixing portion, the fixing portion is clamped on the periphery of the auxiliary separation piece, and the material of the fixing portion is an insulating material.
4. The carrier separation mechanism of the plasma process system according to claim 1, characterized in that: A control device is arranged on one side of the second electrode plate away from the plasma process space.
5. The carrier separation mechanism of the plasma process system according to claim 1, characterized in that: The ribs include a plurality of first ribs that are arranged in parallel and spaced apart from each other.
6. The carrier separation mechanism of the plasma process system according to claim 5, characterized in that: The ribs include a plurality of second ribs that are arranged in parallel and at intervals, and the second ribs intersect the first ribs perpendicularly, wherein the accommodating grooves are arranged corresponding to the first ribs and the second ribs.
7. The carrier separation mechanism of the plasma process system according to claim 6, characterized in that: The second electrode plate also has at least one gas delivery port disposed in the working area, and the at least one gas delivery port inputs a heat dissipation gas into the working area.
8. The carrier separation mechanism of the plasma process system according to claim 7, characterized in that: The working area is recessed with a first airflow groove, and the auxiliary separation piece is recessed with a second airflow groove corresponding to the first airflow groove. The first airflow groove and the second airflow groove are interconnected to form an airflow channel.
9. The carrier separation mechanism of the plasma process system according to claim 8, characterized in that: The intersection of the air flow channels is located in the working area.
10. The carrier separation mechanism of the plasma process system according to claim 8, characterized in that: The second electrode plate also has at least one air extraction port arranged in the working area.
11. The carrier separation mechanism of the plasma process system according to claim 8, characterized in that: The first air flow slot and the second air flow slot have a recessed height, and the recessed height is between 0.1 mm and 0.4 mm.
12. The carrier separation mechanism of the plasma process system according to claim 1, wherein: The second electrode plate also has at least one gas delivery port arranged in the working area. The working area is concavely provided with a first air flow groove to form an air flow channel. The at least one gas delivery port inputs a heat dissipation gas into the working area and flows through the air flow channel.
13. The carrier separation mechanism of the plasma process system according to claim 12, characterized in that: The second electrode plate also has at least one air extraction port arranged in the working area.