Coating equipment
The coating device stabilizes pressure differences between microcrystalline and amorphous process chambers using an isolation chamber group and mechanisms, addressing production issues and enhancing efficiency.
Patent Information
- Application Number
- CN202420218487.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-29
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2034-01-29
AI Technical Summary
The large pressure difference between microcrystalline and amorphous process chambers in heterojunction battery production leads to process chamber alarms, affecting normal production and efficiency.
A coating device with a coating chamber and isolation chamber group, including a first and second process chamber, and isolation mechanisms to maintain pressure differences within preset ranges, ensuring stable operation and efficient production.
The solution maintains reasonable pressure differences between chambers, improving process stability, reducing alarms, and enhancing production efficiency by avoiding excessive pressure variations.
Smart Images
Figure CN222274691U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of product processing technology, and in particular to a coating device. Background Art
[0002] The preparation process of heterojunction batteries is simple, the process temperature is low, and the product has the advantages of high power generation, high stability, no attenuation, and low cost. With the continuous technological progress and policy promotion in the industry, the cost-effectiveness advantage of heterojunction batteries is becoming apparent.
[0003] However, the chamber pressure difference between the microcrystalline process and the amorphous process in the existing heterojunction process is very large. Usually, the chamber pressure of the microcrystalline process is about 3-5 Torr, and the amorphous process chamber is about 0.5-1.5 Torr. In addition, during the coating process, the two chambers are often set adjacent to each other. Due to the large pressure difference between the two chambers, this leads to process chamber alarms, affecting the normal production of the product. Utility Model Content
[0004] The main purpose of the embodiments of the present application is to provide a coating device that can maintain the pressure difference between the two sides of the microcrystalline process chamber and the amorphous process chamber within a reasonable range, thereby improving the process stability.
[0005] To achieve the above-mentioned purpose, a first aspect of an embodiment of the present application provides a coating device, comprising: a coating chamber, comprising a first process chamber and a second process chamber arranged in sequence, wherein a pressure value of the first process chamber is greater than a pressure value of the second process chamber;
[0006] An isolation chamber group is arranged between the first process chamber and the second process chamber, and the isolation chamber group includes at least two isolation chambers. The pressure difference between a first isolation chamber close to the first process chamber and the first process chamber is within a first preset range, and the pressure difference between a second isolation chamber close to the second process chamber and the second process chamber is within a second preset range.
[0007] In some embodiments, a first isolation mechanism is disposed between the first process chamber and the first isolation chamber, and the first isolation mechanism is used to connect the first process chamber and the first isolation chamber when opened.
[0008] In some embodiments, a second isolation mechanism is disposed between the second process chamber and the second isolation chamber, and the second isolation mechanism is used to connect the second process chamber and the second isolation chamber when opened.
[0009] In some embodiments, a third isolation mechanism is provided between adjacent isolation chambers in the isolation chamber group, and the third isolation mechanism is used to connect the adjacent isolation chambers when opened.
[0010] In some embodiments, it also includes a loading chamber and a heating chamber, the output end of the loading chamber is connected to the input end of the heating chamber, the loading chamber includes a carrier plate for carrying the silicon substrate to be coated, and the heating chamber is used to heat the silicon substrate to be coated.
[0011] In some embodiments, an output end of the heating chamber is connected to an input end of the first process chamber.
[0012] In some embodiments, the loading chamber, the heating chamber, the first process chamber, the isolation chamber group and the second process chamber are arranged in sequence.
[0013] In some embodiments, a transport mechanism is further included, and the transport mechanism is used to move the carrier along the setting direction of the loading chamber, the heating chamber, the first process chamber, the isolation chamber group and the second process chamber.
[0014] In some embodiments, the first process chamber is used to dope a microcrystalline silicon seed layer and a microcrystalline silicon functional layer on the silicon substrate to be coated, and the second process chamber is used to dope an amorphous silicon contact layer on the silicon substrate to be coated.
[0015] In some embodiments, a fourth isolation mechanism is provided between the loading chamber and the heating chamber, and the fourth isolation mechanism is used to connect the loading chamber and the heating chamber when opened.
[0016] The coating equipment proposed in the embodiment of the present application has the following beneficial effects: the coating equipment includes a coating chamber and an isolation chamber group, the coating chamber includes a first process chamber and a second process chamber arranged in sequence, so as to realize microcrystalline coating and amorphous coating of the silicon substrate to be coated, the isolation chamber group is arranged between the first process chamber and the second process chamber to realize isolation of the first process chamber and the second process chamber, avoid mutual influence of the pressure values between the first process chamber and the second process chamber, and the pressure difference between the first isolation chamber close to the first process chamber and the first process chamber is within a first preset range, and the pressure difference between the second isolation chamber close to the second process chamber and the second process chamber is within a second preset range, so that the pressure value of the first isolation chamber is close to the pressure value of the first process chamber, and the pressure value of the second isolation chamber is close to the pressure value of the second process chamber, so that the pressure difference between the two sides of the first process chamber and the second process chamber can be kept within a reasonable range during the coating process. Therefore, the coating equipment of the present application reduces the pressure difference between the chambers by arranging the first isolation chamber and the second isolation chamber between the first process chamber and the second process chamber, improves the stability of the process, avoids excessive pressure difference between adjacent chambers, and further improves production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a module schematic diagram of the coating equipment provided in the embodiment of the present application;
[0018] Figure 2 It is a schematic diagram of the coating equipment provided in an embodiment of the present application. DETAILED DESCRIPTION
[0019] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0020] It should be noted that, although the functional modules are divided in the device schematic diagram and the logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in a different order than the module division in the device or the order in the flowchart. The terms "first", "second", etc. in the specification, claims and the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.
[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.
[0022] The preparation process of heterojunction batteries is simple, the process temperature is low, and the product has the advantages of high power generation, high stability, no attenuation, and low cost. With the continuous technological progress and policy promotion in the industry, the cost-effectiveness advantage of heterojunction batteries is becoming apparent.
[0023] However, the chamber pressure difference between the microcrystalline process and the amorphous process in the existing heterojunction process is very large. Usually, the chamber pressure of the microcrystalline process is about 3-5 Torr, and the amorphous process chamber is about 0.5-1.5 Torr. In addition, during the coating process, the two chambers are often set adjacent to each other. Due to the large pressure difference between the two chambers, this leads to process chamber alarms, affecting the normal production of the product.
[0024] The existing process usually sets an isolation chamber between the microcrystalline process chamber and the amorphous process chamber. However, due to the large pressure difference between the microcrystalline process and the amorphous process, no matter how high the pressure of the isolation chamber between the two is set, it is easy to cause the pressure difference between at least one microcrystalline process chamber or at least one amorphous process chamber to be too large. During coating, the excessive pressure difference will cause the process chamber to alarm, affecting normal production. In addition, the existing chamber layout limits the pressure difference adjustment range of the microcrystalline and amorphous processes.
[0025] In order to solve the above problems, the present embodiment proposes a coating device, the coating device includes a coating chamber and an isolation chamber group, the coating chamber includes a first process chamber and a second process chamber arranged in sequence, so as to realize microcrystalline coating and amorphous coating of the silicon substrate to be coated, the isolation chamber group is arranged between the first process chamber and the second process chamber to realize isolation of the first process chamber and the second process chamber, avoid mutual influence of the pressure values between the first process chamber and the second process chamber, and the pressure difference between the first isolation chamber close to the first process chamber and the first process chamber is within a first preset range, and the pressure difference between the second isolation chamber close to the second process chamber and the second process chamber is within a second preset range, so that the pressure value of the first isolation chamber is close to the pressure value of the first process chamber, and the pressure value of the second isolation chamber is close to the pressure value of the second process chamber, so that the pressure difference between the first process chamber and the second process chamber can be kept within a reasonable range during the coating process. Therefore, the coating device of the present application reduces the pressure difference between the chambers by arranging the first isolation chamber and the second isolation chamber between the first process chamber and the second process chamber, improves the stability of the process, avoids excessive pressure difference between adjacent chambers, and further improves production efficiency.
[0026] Please refer to Figure 1 , Figure 1 It is a module schematic diagram of the coating equipment provided in the embodiment of the present application;
[0027] In some embodiments, the coating equipment includes a coating chamber and an isolation chamber group 200, and the coating chamber includes a first process chamber 110 and a second process chamber 120 arranged in sequence. The first process chamber 110 is used to perform microcrystalline coating on the silicon substrate to be coated, thereby improving the charge transfer effect and further improving the photoelectric conversion efficiency of the product. The second process chamber 120 is used to perform amorphous coating on the silicon substrate to be coated, thereby improving the mobility and diffusion length of the carriers and reducing the loss of the carriers in the contact layer, wherein the pressure value of the first process chamber 110 is greater than the pressure value of the second process chamber 120.
[0028] It can be understood that the first process chamber 110 in this embodiment is a microcrystalline process chamber, and the second process chamber 120 is an amorphous process chamber. The coating equipment in this embodiment can be used to process optoelectronic devices, solar cells, sensors, lasers, etc., and this embodiment does not make specific restrictions.
[0029] In some embodiments, the first process chamber 110 is used to dope the microcrystalline silicon seed layer and the microcrystalline silicon functional layer on the silicon substrate to be coated. Specifically, the first process chamber 110 can use the vapor deposition technology to allow the required doping material to chemically react with the silicon atoms on the surface of the silicon substrate to be coated in gaseous form, thereby completing the doping process of the microcrystalline silicon seed layer and the microcrystalline silicon functional layer of the P-type doped layer / N-type doped layer, thereby changing the conductive properties of the silicon substrate to be coated. The second process chamber 120 is used to dope the amorphous silicon contact layer on the silicon substrate to be coated. Specifically, the second process chamber 120 can use the vapor deposition technology to allow the required doping material to chemically react with the silicon atoms on the surface of the silicon substrate to be coated in gaseous form, thereby completing the doping process of the amorphous silicon contact layer of the P-type doped layer / N-type doped layer.
[0030] It should be noted that in this embodiment, a heterojunction battery is used as an example for explanation. The heterojunction battery includes a silicon substrate, a front film layer, and a back film layer, wherein the front film layer includes a front intrinsic layer, a P-type doped layer, a front TCO (Transparent Conductive Oxide) and a front electrode, and the P-type doped layer includes a microcrystalline silicon seed layer, a microcrystalline silicon functional layer, and an amorphous silicon contact layer; the back film layer is N-type doped, and the back film layer includes a back intrinsic layer, an N-type doped layer, a back TCO and a back electrode. The first process chamber 110 is used to complete the doping process of the microcrystalline silicon seed layer and the microcrystalline silicon functional layer of the P-type doped layer / N-type doped layer, and the second process chamber 120 is used to complete the doping process of the amorphous silicon contact layer of the P-type doped layer / N-type doped layer.
[0031] It can be understood that the first process chamber 110 is also filled with P-type doping sources such as dihydrogen diboride and trimethyl boron to dope the microcrystalline silicon seed layer and the microcrystalline silicon functional layer, and the second process chamber 120 is also filled with N-type doping sources such as phosphine and arsenic to dope the amorphous silicon contact layer.
[0032] In some embodiments, the isolation chamber group 200 is disposed between the first process chamber 110 and the second process chamber 120. The isolation chamber group 200 includes at least two isolation chambers. The pressure difference between the first isolation chamber 210 near the first process chamber 110 and the first process chamber 110 is within a first preset range, and the pressure difference between the second isolation chamber 220 near the second process chamber 120 and the second process chamber 120 is within a second preset range, thereby maintaining the pressure difference between the first process chamber 110 and the second process chamber 120 within a reasonable range to avoid excessive pressure difference.
[0033] It should be noted that the first preset range may be the same as or different from the second preset range, wherein the first preset range is related to the pressure value of the first process chamber 110, and the second preset range is related to the pressure value of the second process chamber 120. When the pressure difference between the first isolation chamber 210 and the first process chamber 110 is within the first preset range, it means that the pressure value of the first isolation chamber 210 is close to the pressure value of the first process chamber 110. Similarly, when the pressure difference between the second isolation chamber 220 and the second process chamber 120 is within the second preset range, it means that the pressure value of the second isolation chamber 220 is close to the pressure value of the second process chamber 120. In this way, there will be no situation where the pressure difference on both sides of the first process chamber 110 and / or the second process chamber 120 is too large.
[0034] It can be understood that the first preset range is used to characterize the pressure difference range between the first process chamber 110 and the first isolation chamber 210, wherein the first preset range can be set within 15% of the pressure value of the first process chamber 110, and the second preset range is used to characterize the pressure difference range between the second process chamber 120 and the second isolation chamber 220, wherein the second preset range can be set within 15% of the pressure value of the second process chamber 120. This embodiment does not impose specific restrictions.
[0035] Please refer to Figure 2 , Figure 2 is a schematic diagram of a coating device provided in an embodiment of the present application;
[0036] It should be noted that Figure 2 In the description, an example is taken in which the isolation chamber group 200 only includes the first isolation chamber 210 and the second isolation chamber 220 .
[0037] In some embodiments, a first isolation mechanism 310 is provided between the first process chamber 110 and the first isolation chamber 210. The first isolation mechanism 310 is used to connect the first process chamber 110 and the first isolation chamber 210 when it is opened. Since the pressure values of the first process chamber 110 and the first isolation chamber 210 are similar, there will be no excessive pressure difference, thereby reducing the pressure difference between the chambers.
[0038] It should be noted that when the first process chamber 110 completes coating, since the pressure difference between the first process chamber 110 and the first isolation chamber 210 is within the first preset range, the first isolation mechanism 310 between the first process chamber 110 and the first isolation chamber 210 can be directly opened, and the silicon substrate to be coated enters the first isolation chamber 210, thereby ensuring that the product is coated in a vacuum environment and reducing the diffusion of gas or impurities.
[0039] It is worth noting that when the silicon substrate to be coated enters the first isolation chamber 210, the first isolation mechanism 310 is also used to separate the first process chamber 110 and the first isolation chamber 210 when closed.
[0040] In some embodiments, a second isolation mechanism 320 is provided between the second process chamber 120 and the second isolation chamber 220. The second isolation mechanism 320 is used to connect the second process chamber 120 and the second isolation chamber 220 when opened, so that the pressure change only occurs between the two isolation chambers, thereby ensuring the purity and stability of the process and improving the production efficiency of the product.
[0041] It is worth noting that when the silicon substrate to be coated enters the second process chamber 120, the third isolation mechanism 330 is also used to separate the second isolation chamber 220 and the second process chamber 120 when closed.
[0042] In some embodiments, a third isolation mechanism 330 is provided between adjacent isolation chambers in the isolation chamber group 200. The third isolation mechanism 330 is used to connect adjacent isolation chambers when opened, thereby achieving pressure transition between adjacent isolation chambers and avoiding excessive pressure difference between adjacent isolation chambers. The third isolation mechanism 330 can smoothly move the product from the first process chamber 110 to the second process chamber 120, thereby improving the production efficiency of the product and ensuring the purity and stability of the process.
[0043] It should be noted that when the silicon substrate to be coated is sent from one isolation chamber to an adjacent isolation chamber, taking the case where the silicon substrate to be coated enters the second isolation chamber 220 from the first isolation chamber 210 as an example, when the first process chamber 110 completes processing of the silicon substrate to be coated, the second isolation chamber 220 maintains the current pressure value, and the first isolation chamber 210 reduces the pressure until it is close to the pressure value of the second isolation chamber 220. At this time, the third isolation mechanism 330 is opened, and the silicon substrate to be coated enters the second isolation chamber 220. Since the pressure difference between the second isolation chamber 220 and the second process chamber 120 is within the second preset range, the pressure value of the second isolation chamber 220 does not need to be changed, the second isolation mechanism 320 is opened, and the silicon substrate to be coated directly enters the second process chamber 120.
[0044] It is worth noting that during the process of the silicon substrate to be coated being sent from the first isolation chamber 210 to the second isolation chamber 220, the pressure value of the first isolation chamber 210 can remain unchanged, and the pressure of the second isolation chamber 220 is increased until it is close to the pressure value of the first isolation chamber 210. At this time, the third isolation mechanism 330 is opened, and the silicon substrate to be coated enters the second isolation chamber 220. Since the pressure value of the second isolation chamber 220 has changed, the second isolation chamber 220 also needs to reduce the pressure until the pressure difference between the second isolation chamber 220 and the second process chamber 120 is within the second preset range. The second isolation mechanism 320 is opened, and the silicon substrate to be coated directly enters the second process chamber 120.
[0045] In some embodiments, the third isolation mechanism 330 can also be opened when the pressure difference between two adjacent isolation chambers meets the preset pressure difference. For example, the pressure difference between two adjacent isolation chambers is maintained within 20%. In this way, the pressure environment of each isolation chamber can remain basically unchanged. When the silicon substrate to be coated is transported, the third isolation mechanism 330 can be directly opened to avoid the isolation mechanism from getting stuck.
[0046] It is worth noting that when the silicon substrate to be coated enters the second isolation chamber 220, the second isolation mechanism 320 is also used to separate the first isolation chamber 210 and the second isolation chamber 220 when closed.
[0047] Through the above-mentioned embodiments, during the coating process of the silicon substrate to be coated, the pressure difference between the first process chamber 110 and the second process chamber 120 can be maintained within a reasonable range, thereby improving the stability of the coating, avoiding problems caused by the large pressure difference, and improving the film quality and production efficiency.
[0048] In some embodiments, a loading chamber 400 and a heating chamber 500 are also included. The output end of the loading chamber 400 is connected to the input end of the heating chamber 500. The loading chamber 400 includes a carrier plate for carrying the silicon substrate to be coated, thereby achieving the carrying of the silicon substrate to be coated. The heating chamber 500 is used to heat the silicon substrate to be coated, so that the silicon substrate to be coated can be heated to a preset temperature, so that the silicon substrate to be coated is evenly heated, which is convenient for the subsequent deposition of microcrystalline materials and amorphous materials and improves the coating quality.
[0049] It should be noted that the carrier board in this embodiment may also be provided with a fixing device, such as a clamp, a slot, etc., and this embodiment does not impose any specific limitation.
[0050] In some embodiments, the output end of the heating chamber 500 is connected to the input end of the first process chamber 110 , so that the heated silicon substrate to be coated can be transported to the first process chamber 110 for processing.
[0051] It should be noted that an isolation mechanism 350 is disposed between the heating chamber 500 and the first process chamber 110 . When the isolation mechanism 350 is turned on, the heating chamber 500 and the first process chamber 110 are connected to transport the silicon substrate to be coated to the first process chamber 110 .
[0052] It is worth noting that when the silicon substrate to be coated enters the heating chamber 500, the isolation mechanism is also used to separate the loading chamber 400 and the heating chamber 500 when closed.
[0053] In some embodiments, a fourth isolation mechanism 340 is disposed between the loading chamber 400 and the heating chamber 500 . The fourth isolation mechanism 340 is used to connect the loading chamber 400 and the heating chamber 500 when opened to isolate the loading chamber 400 and the heating chamber 500 .
[0054] It is worth noting that when the silicon substrate to be coated enters the first process chamber 110, the fourth isolation mechanism 340 is also used to separate the heating chamber 500 and the first process chamber 110 when closed.
[0055] It should be noted that, in this embodiment, the first isolation mechanism 310, the second isolation mechanism 320, the third isolation mechanism 330, the fourth isolation mechanism 340 and the isolation mechanism 350 can be gate valve mechanisms, partition mechanisms, etc., and an isolation mechanism is arranged between each cavity, so as to achieve isolation of each cavity in the coating equipment, reduce cross contamination, avoid mutual influence between cavities, and improve product quality and process stability.
[0056] In some embodiments, the loading chamber 400, the heating chamber 500, the first process chamber 110, the isolation chamber group 200 and the second process chamber 120 are arranged in sequence, thereby improving the processing efficiency of the silicon substrate to be coated.
[0057] In some embodiments, a conveying mechanism is also included, which is used to move the carrier back and forth along the setting direction of the loading chamber 400, the heating chamber 500, the first process chamber 110, the isolation chamber group 200 and the second process chamber 120, so that the silicon substrate to be coated can be moved to different chambers for processing, thereby realizing continuous transportation of the carrier.
[0058] It should be noted that the transmission mechanism can be a conveyor belt, a roller mechanism, etc. Taking the transmission mechanism as a roller mechanism as an example, the transmission device includes multiple roller devices, and the multiple roller devices are relatively arranged on both sides of the carrier transmission direction, and the multiple roller devices are evenly spaced. Among them, the roller device can be in the form of a fixed connection between a magnetic shaft and a roller, and the carrier is placed on the roller. The driving device drives the magnetic shaft to rotate, thereby driving the roller to rotate, and then the carrier is sequentially transmitted to the heating chamber 500, the first process chamber 110, the isolation chamber group 200 and the second process chamber 120.
[0059] It can be understood that in the process of processing the silicon substrate to be coated, the user first loads the silicon substrate to be coated in the loading chamber 400, places the silicon substrate to be coated on a specific position of the carrier, and the fourth isolation mechanism 340 is opened, and the silicon substrate to be coated is transported to the heating chamber 500 through the carrier. After the heating of the heating chamber 500 is completed, the isolation mechanism 350 between the heating chamber 500 and the first process chamber 110 is opened, and the silicon substrate to be coated is transported to the first process chamber 110 through the carrier for microcrystalline coating. After the microcrystalline coating is completed, the first isolation mechanism 310 is opened, and the silicon substrate to be coated is transported to the first isolation chamber 210 through the carrier. Thereafter, the pressure values of the first isolation chamber 210 and the second isolation chamber 220 are adjusted, and the second isolation mechanism 320 is opened, and the silicon substrate to be coated is transported to the second isolation chamber 220 through the carrier. Finally, the third isolation mechanism 330 is opened, and the silicon substrate to be coated is transported to the second process chamber 120 through the carrier for amorphous coating, thereby completing the coating process of the silicon substrate to be coated.
[0060] The embodiments described in the embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Those skilled in the art will appreciate that with the evolution of technology and the emergence of new application scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.
[0061] It can be understood by those skilled in the art that Figure 1 to Figure 2 The technical solutions shown in the specification do not constitute a limitation on the embodiments of the present application.
[0062] It should be understood that in the present application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.
[0063] In the several embodiments provided in this application, it should be understood that the disclosed device can be implemented in other ways. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.
[0064] The preferred embodiments of the present invention are described above with reference to the accompanying drawings, but the scope of the rights of the present invention is not limited thereto. Any modification, equivalent substitution and improvement made by a person skilled in the art without departing from the scope and essence of the present invention should be within the scope of the rights of the present invention.
Claims
1. A coating device, characterized in that: include: The coating chamber comprises a first process chamber and a second process chamber which are arranged in sequence, wherein a pressure value of the first process chamber is greater than a pressure value of the second process chamber; An isolation chamber group is arranged between the first process chamber and the second process chamber, and the isolation chamber group includes at least two isolation chambers. The pressure difference between a first isolation chamber close to the first process chamber and the first process chamber is within a first preset range, and the pressure difference between a second isolation chamber close to the second process chamber and the second process chamber is within a second preset range.
2. The coating device according to claim 1, characterized in that: A first isolation mechanism is disposed between the first process chamber and the first isolation chamber, and the first isolation mechanism is used to connect the first process chamber and the first isolation chamber when opened.
3. The coating device according to claim 1, characterized in that: A second isolation mechanism is provided between the second process chamber and the second isolation chamber, and the second isolation mechanism is used for connecting the second process chamber and the second isolation chamber when the second isolation mechanism is opened.
4. The coating device according to claim 1, characterized in that: A third isolation mechanism is provided between adjacent isolation chambers in the isolation chamber group, and the third isolation mechanism is used to connect adjacent isolation chambers when opened.
5. The coating device according to claim 1, characterized in that: It also includes a loading chamber and a heating chamber, wherein the output end of the loading chamber is connected to the input end of the heating chamber, the loading chamber includes a carrier plate for carrying the silicon substrate to be coated, and the heating chamber is used to heat the silicon substrate to be coated.
6. The coating device according to claim 5, characterized in that: The output end of the heating chamber is connected to the input end of the first process chamber.
7. The coating device according to claim 5, characterized in that: The loading chamber, the heating chamber, the first process chamber, the isolation chamber group and the second process chamber are arranged in sequence.
8. The coating device according to claim 5, characterized in that: It also includes a transmission mechanism, which is used to move the carrier along the setting direction of the loading chamber, the heating chamber, the first process chamber, the isolation chamber group and the second process chamber.
9. The coating device according to claim 1, characterized in that: The first process chamber is used for doping a microcrystalline silicon seed layer and a microcrystalline silicon functional layer on the silicon substrate to be coated, and the second process chamber is used for doping an amorphous silicon contact layer on the silicon substrate to be coated.
10. The coating device according to claim 5, characterized in that: A fourth isolation mechanism is provided between the loading chamber and the heating chamber, and the fourth isolation mechanism is used to connect the loading chamber and the heating chamber when opened.