Diode temperature compensation circuit

Abstract

The utility model belongs to the technical field of diodes, and relates to a diode temperature compensation circuit, which comprises a power amplifier grid bias circuit, a power amplifier drain bias circuit, a high-frequency power amplifier and an output isolation circuit of the power amplifier which are electrically connected, the power amplifier grid bias circuit is used for providing a stable bias voltage for a grid of the power amplifier, the power amplifier drain bias circuit is used for providing a stable bias voltage for a drain of the power amplifier, and the high-frequency power amplifier is used for converting a low-frequency signal into a high-frequency signal and amplifying the high-frequency signal to drive a load. The output isolation circuit of the power amplifier is used for isolating the output of the power amplifier from a load, so that the stability and the reliability of the whole circuit system are protected. Rated power can be continuously and stably output, and the practicability of the interphone is greatly improved; cost is low and a circuit structure is simple.

Description

Technical Field

[0001] The utility model relates to the technical field of diodes, and more specifically to a diode temperature compensation circuit. Background Art

[0002] At present, in the field of wireless communication handheld walkie-talkies, especially in consumer handheld terminal devices, triode amplifiers are usually used. In the environment of low temperature -30℃ and high temperature 55℃, the output power fluctuates greatly, far exceeding the industry standard of +1, -3 (dB). In a low temperature environment, when the ambient temperature (T) drops, the triode amplifier gain (β) decreases, the DC operating point (IDQ) decreases, and the output power (Po) decreases. In a high temperature environment, when the ambient temperature (T) rises, the triode amplifier gain (β) increases, the DC operating point (IDQ) increases, and the output power (Po) increases. The defect in the prior art is that the DC operating point of the triode amplifier changes with the temperature, causing the output power to fluctuate with the temperature. Utility Model Content

[0003] The technical problem to be solved by the utility model is that the DC operating point of the triode amplifier in the prior art changes with the change of temperature, resulting in the output power of the line communication handheld walkie-talkie field fluctuating with the temperature. In view of the above-mentioned defects of the prior art, a diode temperature compensation circuit is provided, comprising:

[0004] Through the electrically connected power amplifier gate bias circuit, power amplifier drain bias circuit, high-frequency power amplifier, and power amplifier output isolation circuit, the power amplifier gate bias circuit is used to provide a stable bias voltage for the gate of the power amplifier, the power amplifier drain bias circuit is used to provide a stable bias voltage for the drain of the power amplifier, the high-frequency power amplifier is used to convert a low-frequency signal into a high-frequency signal and amplify it to drive a load, and the power amplifier output isolation circuit is used to isolate the output of the power amplifier from the load, thereby protecting the stability and reliability of the entire circuit system.

[0005] Preferably, the power amplifier gate bias circuit includes: one end of the resistor R60 is respectively connected to one end of the capacitor C89, the positive electrode of the diode D24, and one end of the resistor R62, the negative electrode of the diode D24 is connected to one end of the resistor R61, and the other end of the resistor R61 and the other end of the capacitor C89 are grounded.

[0006] Preferably, the power amplifier drain bias circuit includes: one end of capacitor C96 is respectively connected to one end of capacitor C93, one end of inductor L16, and one end of resistor R183, the other end of capacitor C96 and the other end of capacitor C93 are both grounded, and the other end of inductor L16 is connected to the other end of resistor R183.

[0007] Preferably, the high-frequency power amplifier includes: the drain of transistor Q6 is connected to one end of capacitor C156, the other end of capacitor C156 is connected to one end of resistor R110, and the gate of transistor Q6 and the other end of resistor R110 are both connected to the power amplifier gate bias circuit.

[0008] Preferably, the output isolation circuit of the power amplifier comprises: an anode of the diode D16 is connected to an anode of the diode D46 and one end of the resistor R5 respectively, and the other end of the resistor R5 is grounded.

[0009] Preferably, the diode D24 is any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A.

[0010] Preferably, the inductor L16 is any one of SJ0.30-8TR51 NJ, C1812, C1210, C2220, I-shaped inductor, color ring inductor, ring coil inductor, SMD laminated high frequency inductor, and SMD SMD power inductor.

[0011] Preferably, the transistor Q6 is any one of 2SK3078, 2N2222, 2N3904, BC547, 2N3906, BC557, and BC547.

[0012] Preferably, the diode D16 is any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A.

[0013] Preferably, the diode D46 is any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A.

[0014] The diode temperature compensation circuit of the utility model has the following beneficial effects: by setting a power amplifier gate bias circuit, a power amplifier drain bias circuit, a high-frequency power amplifier, and an output isolation circuit of the power amplifier that are electrically connected, the power amplifier gate bias circuit is used to provide a stable bias voltage for the gate of the power amplifier, the power amplifier drain bias circuit is used to provide a stable bias voltage for the drain of the power amplifier, the high-frequency power amplifier is used to convert a low-frequency signal into a high-frequency signal and amplify it to drive a load, and the output isolation circuit of the power amplifier is used to isolate the output of the power amplifier from the load, thereby protecting the entire circuit The stability and reliability of the system; it can be widely used in the field of wireless communication walkie-talkies, and can adapt to the market development needs of handheld terminal walkie-talkies in amateur frequency bands and professional commercial frequency bands. It puts users first, fully considers the practicality of walkie-talkies, and can be used in different ambient temperatures to ensure the RF output power of handheld walkie-talkies to meet the industry standard of +1, -3 (dB); using the temperature characteristics of the diode PN junction, the bias voltage of the RF power amplifier is temperature compensated, so that the walkie-talkie can continuously and stably output the rated power in the ambient temperature range of low temperature -30℃ and high temperature +55℃, greatly improving the practicality of the walkie-talkie; low cost and simple circuit architecture. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without creative work. The utility model will be further described below in combination with the drawings and embodiments. In the drawings:

[0016] Figure 1 This is a structural framework diagram of the diode temperature compensation circuit of the utility model;

[0017] Figure 2 It is a circuit diagram of a preferred embodiment of the diode temperature compensation circuit of the utility model.

[0018] In the figure, 1-power amplifier gate bias circuit, 2-power amplifier drain bias circuit, 3-high frequency power amplifier, 4-power amplifier output isolation circuit. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0020] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back...), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0021] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the utility model, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the utility model.

[0022] See also Figure 1 , is a schematic diagram of the diode temperature compensation circuit of the utility model. Figure 1 As shown, in the diode temperature compensation circuit provided in the first embodiment of the utility model, at least includes:

[0023] Through the electrically connected power amplifier gate bias circuit 1, power amplifier drain bias circuit 2, high-frequency power amplifier 3, and power amplifier output isolation circuit 4, the power amplifier gate bias circuit 1 is used to provide a stable bias voltage for the gate of the power amplifier, the power amplifier drain bias circuit 2 is used to provide a stable bias voltage for the drain of the power amplifier, the high-frequency power amplifier 3 is used to convert a low-frequency signal into a high-frequency signal and amplify it to drive a load, and the power amplifier output isolation circuit 4 is used to isolate the output of the power amplifier from the load, thereby protecting the stability and reliability of the entire circuit system.

[0024] Figure 2 FIG. 1 is a circuit diagram of a preferred embodiment of the diode temperature compensation circuit of the utility model. Figure 2As shown, the power amplifier gate bias circuit 1 includes: one end of the resistor R60 is respectively connected to one end of the capacitor C89, the positive electrode of the diode D24, and one end of the resistor R62, the negative electrode of the diode D24 is connected to one end of the resistor R61, and the other end of the resistor R61 and the other end of the capacitor C89 are grounded. The power amplifier gate bias circuit 1 includes the diode D24 and the resistor R61, which form a series voltage divider circuit, the diode D24 plays a role of temperature compensation, and the capacitor C89 plays a role of high-frequency bypass.

[0025] The power amplifier drain bias circuit 2 includes: one end of a capacitor C96 is respectively connected to one end of a capacitor C93, one end of an inductor L16, and one end of a resistor R183, the other end of the capacitor C96 and the other end of the capacitor C93 are both grounded, and the other end of the inductor L16 is connected to the other end of the resistor R183. In the power amplifier drain bias circuit 2, the inductor L16 can be a high-frequency choke, and the capacitors C96 and C93 are high-frequency bypass capacitors.

[0026] The high-frequency power amplifier 3 includes: the drain of the transistor Q6 is connected to one end of the capacitor C156, the other end of the capacitor C156 is connected to one end of the resistor R110, and the gate of the transistor Q6 and the other end of the resistor R110 are both connected to the power amplifier gate bias circuit 1. The high-frequency power amplifier 3 plays a role in high-frequency power amplification.

[0027] The output isolation circuit 4 of the power amplifier includes: the anode of the diode D16 is connected to the anode of the diode D46 and one end of the resistor R5 respectively, and the other end of the resistor R5 is grounded. In the output isolation circuit 4 of the power amplifier, the diode D16 and the diode D46 both play an isolation role.

[0028] In a specific implementation, the diode D24 can be, but is not limited to, any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A. In this embodiment, the diode D24 is selected as ISS356.

[0029] In specific implementation, the inductor L16 is any one of SJ0.30-8TR51 NJ, C1812, C1210, C2220, I-shaped inductor, color ring inductor, ring coil inductor, SMD laminated high frequency inductor, SMD SMD power inductor. In this embodiment, the inductor L16 is selected as SJ0.30-8TR51 NJ.

[0030] In a specific implementation, the transistor Q6 can be, but is not limited to, any one of 2SK3078, 2N2222, 2N3904, BC547, 2N3906, BC557, and BC547. In this embodiment, the transistor Q6 is 2SK3078.

[0031] In a specific implementation, the diode D16 can be, but is not limited to, any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A. In this embodiment, the diode D16 is selected as ISS356.

[0032] In a specific implementation, the diode D46 can be, but is not limited to, any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A. In this embodiment, the diode D16 is selected as ISS356.

[0033] The working principle of the diode temperature compensation circuit of the utility model is:

[0034] In low temperature environment: When the ambient temperature (T) drops, the amplification factor (β) of transistor Q6 drops, the DC operating point (IDQ) drops, and the output power (Po) drops. After adding temperature compensation, when the ambient temperature (T) drops, the amplification factor (β) of transistor Q6 drops, and the DC operating point (IDQ) drops. Since the tube voltage drop of UD increases with the temperature drop, the UGSQ of transistor Q6 increases, the DC operating point (IDQ) increases, and the output power (Po) increases. After the above analysis, after adding the diode temperature compensation circuit, at low temperatures, the DC operating point (IDQ) of the amplifier transistor Q6 basically does not change with temperature, and the output power (Po) also basically does not change with temperature, which achieves the purpose of stabilizing the output power.

[0035] In high temperature environment: when the ambient temperature (T) increases, the amplification factor (β) of transistor Q6 increases, the DC operating point (IDQ) increases, and the output power (Po) increases. After adding temperature compensation, when the ambient temperature (T) increases, the amplification factor (β) of transistor Q6 increases, and the DC operating point (IDQ) increases. Since the tube voltage drop of UD decreases with the increase of temperature, the UGSQ of transistor Q6 decreases, the DC operating point (IDQ) decreases, and the output power (Po) decreases. After the above analysis, after adding the diode temperature compensation circuit, at high temperature, the DC operating point (IDQ) of the amplifier transistor Q6 basically does not change with temperature, and the output power (Po) does not change with temperature, which achieves the purpose of stabilizing the output power. It can be seen that the utility model has low cost and simple circuit architecture. Only one silicon material diode is needed to achieve good temperature compensation. With the improvement of modern semiconductor manufacturing and packaging technology, the difference between each diode can be almost ignored, so the consistency of the circuit is also very good, which can fully meet the needs of civilian consumer products.

[0036] When the temperature decreases, the PN junction becomes wider, and when the temperature increases, the PN junction becomes narrower. The utility model utilizes the temperature characteristics of the diode PN junction and applies this characteristic to the bias circuit of the amplifier, which can compensate the static operating point of the amplifier when the temperature changes; thus, the amplifier works in the best working state with the minimum distortion, the best linearity and the highest working efficiency, ensuring the reliability of the walkie-talkie working in extreme environments and greatly improving the practicality of the product.

[0037] The utility model has the beneficial effects of the above embodiments: by setting a power amplifier gate bias circuit, a power amplifier drain bias circuit, a high-frequency power amplifier, and an output isolation circuit of the power amplifier that are electrically connected, the power amplifier gate bias circuit is used to provide a stable bias voltage for the gate of the power amplifier, the power amplifier drain bias circuit is used to provide a stable bias voltage for the drain of the power amplifier, the high-frequency power amplifier is used to convert a low-frequency signal into a high-frequency signal and amplify it to drive a load, and the output isolation circuit of the power amplifier is used to isolate the output of the power amplifier from the load, thereby protecting the entire circuit. The stability and reliability of the circuit system; it can be widely used in the field of wireless communication walkie-talkies, and can adapt to the market development needs of handheld terminal walkie-talkies in amateur frequency bands and professional commercial frequency bands. It focuses on users, fully considers the practicality of walkie-talkies, and can be used in different ambient temperatures to ensure that the RF output power of handheld walkie-talkies meets the industry standard of +1, -3 (dB); the temperature characteristics of the diode PN junction are used to temperature compensate the bias voltage of the RF power amplifier, so that the walkie-talkie can continuously and stably output the rated power in the ambient temperature range of -30℃ and +55℃, greatly improving the practicality of the walkie-talkie; low cost and simple circuit architecture.

[0038] The present invention is described according to specific embodiments, but those skilled in the art should understand that various changes and equivalent substitutions can be made without departing from the scope of the present invention. In addition, in order to adapt to specific occasions of the present invention technology, many modifications can be made to the present invention without departing from its protection scope. Therefore, the present invention is not limited to the specific embodiments disclosed herein, but includes all embodiments that fall within the scope of protection of the claims.

Claims

1. A diode temperature compensation circuit, characterized in that: include: Through the electrically connected power amplifier gate bias circuit, power amplifier drain bias circuit, high-frequency power amplifier, and power amplifier output isolation circuit, the power amplifier gate bias circuit is used to provide a stable bias voltage for the gate of the power amplifier, the power amplifier drain bias circuit is used to provide a stable bias voltage for the drain of the power amplifier, the high-frequency power amplifier is used to convert a low-frequency signal into a high-frequency signal and amplify it to drive a load, and the power amplifier output isolation circuit is used to isolate the output of the power amplifier from the load, thereby protecting the stability and reliability of the entire circuit system.

2. The diode temperature compensation circuit according to claim 1, characterized in that: The power amplifier gate bias circuit includes: one end of the resistor R60 is respectively connected to one end of the capacitor C89, the positive electrode of the diode D24, and one end of the resistor R62, the negative electrode of the diode D24 is connected to one end of the resistor R61, and the other end of the resistor R61 and the other end of the capacitor C89 are grounded.

3. The diode temperature compensation circuit according to claim 1, characterized in that: The power amplifier drain bias circuit includes: one end of capacitor C96 is respectively connected to one end of capacitor C93, one end of inductor L16, and one end of resistor R183, the other end of capacitor C96 and the other end of capacitor C93 are both grounded, and the other end of inductor L16 is connected to the other end of resistor R183.

4. The diode temperature compensation circuit according to claim 1, characterized in that: The high frequency power amplifier includes: the drain of transistor Q6 is connected to one end of capacitor C156, the other end of capacitor C156 is connected to one end of resistor R110, and the gate of transistor Q6 and the other end of resistor R110 are both connected to the power amplifier gate bias circuit.

5. The diode temperature compensation circuit according to claim 1, characterized in that: The output isolation circuit of the power amplifier includes: an anode of a diode D16 is connected to an anode of a diode D46 and one end of a resistor R5 respectively, and the other end of the resistor R5 is grounded.

6. The diode temperature compensation circuit according to claim 2, characterized in that: The diode D24 is any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A.

7. The diode temperature compensation circuit according to claim 3, characterized in that: The inductor L16 is any one of SJ0.30-8TR51 NJ, C1812, C1210, C2220, I-shaped inductor, color ring inductor, ring coil inductor, SMD laminated high frequency inductor and SMD SMD power inductor.

8. The diode temperature compensation circuit according to claim 4, characterized in that: The transistor Q6 is any one of 2SK3078, 2N2222, 2N3904, BC547, 2N3906, BC557, and BC547.

9. The diode temperature compensation circuit according to claim 5, characterized in that: The diode D16 is any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A.

10. The diode temperature compensation circuit according to claim 5, characterized in that: The diode D46 is any one of ISS356, 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007, 1N5400, 1N5401, 1N5402, BZX55C, BZX79C, BZX85C, 1N4148, BAT54S, and 1N4742A.

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