Metal ion generation device for ECR ion source

Abstract

The utility model relates to the technical field of heavy ion generating devices, in particular to a metal ion generating device for an ECR (electron cyclotron resonance) ion source, which comprises an ion generating cavity, a microwave feed-in waveguide tube, a high-frequency high-temperature induction furnace, a communicating tube sleeve, a heating resistance furnace, a metal feeding box and a bias electrode. The microwave feed-in waveguide tube, the high-frequency high-temperature induction furnace, the communicating tube sleeve and the bias electrode are arranged at the ECR ion source injection end of the ion generation cavity in a penetrating manner; and one of the heating resistance furnace and the metal feeding box is arranged on the communicating pipe sleeve. According to the utility model, three metal ion generation methods of a new MIVOC method, a new high-frequency high-temperature induction furnace method and a new heating resistance furnace method are integrated, the crucible temperature of metal ions debugged by an ion source crucible method is increased, the temperature range of high-temperature refractory metal ions is widened to 100-3000 DEG C, the energy range of the metal ions is increased, the stability of a lead-out beam is maintained, the use efficiency of a terminal beam is improved, and the service life of the terminal beam is prolonged. And favorable conditions are created for the production of high-temperature refractory metal ions, and the requirements of users on the high-temperature refractory metal ions are met.

Description

Technical Field

[0001] The utility model relates to the technical field of heavy ion generating devices, in particular to a metal ion generating device used for an ECR ion source. Background Art

[0002] Electron Cyclotron Resonance (ECR) ion source is one of the most effective devices for providing high-current and high-charge ion beams for modern heavy ion accelerators, and has been widely used in large accelerator devices. Under normal conditions, most metal elements exist in solid form. To produce ions of these elements in the ECR ion source, their gaseous state must be obtained. At present, the elements that only exist in solid form at room temperature and pressure are produced in gaseous form in the ECR ion source mainly through internal furnace method, plasma heating method, plasma sputtering method, laser melting method and volatile compound metal ion (Metallie Ion from Volatile Compound, MIVOC) method.

[0003] Among them, the internal furnace method, plasma heating method, plasma sputtering method, and laser melting method are similar in principle, and the sample is heated to melt and evaporate by different heating methods. Taking the internal furnace method as an example, this is an indirect heating method. Simply put, the crucible is heated to a high temperature by ohmic heating, and then the sample loaded into the crucible is heated by the high temperature of the crucible to melt and evaporate. The MIVOC method is based on the extremely small gas consumption of the ECR ion source. The compound molecules containing the beam ion elements to be supplied are volatilized from volatile organic metal compounds (metallocene compounds: Fe(C5H5)2, Ni(C5H5)2, Co(C5H5)2, etc.) to form a gas as the working gas of the ion source and enter the plasma arc chamber. When the saturated vapor pressure of the volatile metal at room temperature reaches or exceeds 0.1Pa, the gas supply requirements of the ECR ion source can be met by the volatilized metal organic compound molecular gas alone.

[0004] The study of high entropy alloys has become a hot topic in the field of materials. Refractory high entropy alloys such as Nb, Zr, Ti, Mo, and V have shown excellent mechanical properties and sufficient potential. The study of their radiation resistance is of great significance for nuclear use. The ECR ion source can provide most of the gaseous ion beams to meet scientific research needs, but the range of metal ions it provides is still limited. At present, a single ECR ion source metal ion generation device generally adopts a single solid-to-gas conversion method, such as high-temperature crucible furnace debugging or MIVOC method debugging. For the generation of refractory high entropy alloy metal ions, high-temperature crucible furnace debugging is used. Due to the limitations of furnace high-voltage insulation, high-temperature materials, heating temperature and other conditions, metal ions are difficult to generate or maintain stably; and the MIVOC method is used for debugging. Because the MIVOC method is debugged under normal temperature, the volatilization rate of organic metal compounds is uncontrollable and unstable, which also makes it difficult to generate metal ions. Therefore, the existing ECR ion source metal ion generation device has formed a great limitation on the temperature range of high-temperature refractory metal ions. Utility Model Content

[0005] The utility model provides a metal ion generating device for an ECR ion source, which is used to solve the defect that the metal ion generating device of the ECR ion source in the prior art is difficult to stably maintain the generation of high-temperature refractory metal ions, meet the urgent needs of users for high-temperature refractory metal ions, improve the efficiency of terminal beam use, and create favorable conditions for the output of high-temperature refractory metal ions.

[0006] The utility model provides a metal ion generating device for an ECR ion source, comprising:

[0007] An ion generating chamber, wherein the ion generating chamber is constructed as a vacuum environment, one end of the ion generating chamber is an ECR ion source injection end, and the other end is an ECR ion source extraction end;

[0008] A microwave feeding waveguide is provided through the ECR ion source injection end of the ion generating cavity;

[0009] A high-frequency and high-temperature induction furnace is provided through the ECR ion source injection end of the ion generation cavity, and the furnace body crucible of the high-frequency and high-temperature induction furnace is located in the ion generation cavity;

[0010] A connecting pipe sleeve is provided through the ECR ion source injection end of the ion generating chamber, wherein the outlet end of the connecting pipe sleeve is located in the ion generating chamber, and the inlet end of the connecting pipe sleeve is located outside the ion generating chamber;

[0011] A heating resistance furnace and a metal feed box, wherein one of the heating resistance furnace and the metal feed box is installed at the inlet end of the connecting pipe sleeve; the metal feed box is provided with a temperature control device;

[0012] A bias electrode is provided through the ECR ion source injection end of the ion generating cavity. The bias ionization disk of the bias electrode is located in the ion generating cavity. The outlet end of the microwave feeding waveguide, the outlet end of the high-frequency and high-temperature induction furnace and the end of the connecting pipe sleeve are all provided through the bias ionization disk.

[0013] According to a metal ion generating device for an ECR ion source provided by the utility model, it also includes a welding injection assembly, which is connected to the ECR ion source injection end of the ion generating cavity to form a vacuum seal for the ECR ion source injection end of the ion generating cavity; the microwave feeding waveguide tube, the high-frequency and high-temperature induction furnace and the connecting pipe sleeve are all penetrated by the welding injection assembly.

[0014] According to a metal ion generating device for an ECR ion source provided by the utility model, the welding injection assembly includes a first end cover and a second end cover, the first end cover is connected to the ECR ion source injection end of the ion generating cavity, the second end cover is located in the ion generating cavity, the microwave feeding waveguide tube, the high-frequency and high-temperature induction furnace and the connecting pipe sleeve all pass through the first end cover and the second end cover in sequence, and the bias ionization disk is fixed on the end face of the second end cover away from the first end cover.

[0015] According to a metal ion generating device for an ECR ion source provided by the utility model, bolt holes are correspondingly arranged on the bias ionization disk and the second end cover, a ceramic ring is arranged in the bolt hole of the second end cover, the bias ionization disk and the second end cover are fixed by inserting a molybdenum bolt assembly through the bolt hole, and a ceramic gasket is arranged between the bias ionization disk and the second end cover.

[0016] According to a metal ion generating device for an ECR ion source provided by the utility model, the temperature control device is a heating sleeve nested in the outer periphery of the metal feed box, the temperature control device is connected to an external DC power supply through an isolation transformer, and the isolation transformer is also connected to the bias electrode; a voltage regulator is connected in series in the circuit of the external DC power supply of the isolation transformer to change the input power in real time by adjusting the voltage regulator.

[0017] According to a metal ion generating device for an ECR ion source provided by the utility model, the ion generating chamber is horizontally installed on a platform, and a point focusing heating device is also provided on the platform. The point focusing heating device is located on the side of the inlet end of the connecting pipe sleeve and is suitable for heating the metal feed box installed at the inlet end of the connecting pipe sleeve.

[0018] According to a metal ion generating device for an ECR ion source provided by the utility model, the point-shaped focusing heating device comprises:

[0019] A point-shaped focusing heater, the point-shaped focusing heater comprises a curved radiation cover, a halogen lamp holder is arranged at the center of the curved radiation cover, a power supply interface is arranged outside the curved radiation cover, and the curved radiation cover faces the inlet end of the connecting pipe sleeve to form a point-shaped focusing heating for the metal feed box installed at the inlet end of the connecting pipe sleeve;

[0020] A focusing heating controller connected to a power supply interface of the point-shaped focusing heater;

[0021] An infrared probe is connected to the focusing heating controller, and the infrared probe faces the heating focusing point formed by the point-shaped focusing heater.

[0022] According to a metal ion generating device for an ECR ion source provided by the utility model, the bias electrode includes the bias ionization disk, and also includes a bias electrode negative terminal, a ceramic column, an enameled wire and a long stud;

[0023] The enameled wire and the long stud are located in the ion generating chamber; one end of the long stud is connected to the bias ionization disk, and the other end is connected to the enameled wire; the enameled wire is connected to the bias electrode negative terminal; the ECR ion source injection end of the ion generating chamber is penetrated by the ceramic column; the bias electrode negative terminal is vacuum sealed to the ceramic column to lead the bias electrode negative terminal from the inside of the ion generating chamber to the outside of the ion generating chamber.

[0024] According to a metal ion generating device for an ECR ion source provided by the utility model, the metal ion generating device also includes an inlet and outlet cooling water pipe penetrating the ECR ion source injection end of the ion generating cavity, the water inlet and outlet of the inlet and outlet cooling water pipe are both located outside the ion generating cavity, and the main body of the inlet and outlet cooling water pipe extends inside the ion generating cavity to perform heat exchange cooling on the inside of the ion generating cavity.

[0025] According to a metal ion generating device for an ECR ion source provided by the utility model, the metal ion generating device also includes an air inlet pipeline penetrating the ion generating cavity, the air inlet end of the air inlet pipeline is located outside the ion generating cavity, and the air outlet end of the air inlet pipeline is flush with the outlet end of the microwave feeding waveguide tube, the outlet end of the high-frequency and high-temperature induction furnace, and the end of the connecting pipe sleeve.

[0026] The utility model provides a metal ion generating device for an ECR ion source. The utility model forms three metal ion generating methods through a combined injection assembly. The MIVOC method is used to debug a metal feed box. The temperature of the metal feed box is regulated by a temperature control device, so that more volatile metal compounds can be gasified, and a stable higher flow intensity and more refractory metal ions can be generated for the ECR ion source. The ion beam generated by a high-frequency high-temperature induction furnace has a high beam flow intensity and is easy to obtain a high temperature. The coreless induction furnace can obtain a high temperature of 3000°C, and has the advantages of easy and fast heating, good furnace operation performance, local heating, and small oxidation loss of the heated object. The heating resistance furnace is used, and the optimal working temperature is 600-1300°C (the working gas pressure is 10 -4 ~10 -5 Pa), the furnace temperature increases with the increase of heating power. The three metal ion generation methods formed by the combined injection assembly greatly improve the crucible temperature of the ion source crucible method for debugging metal ions, and expand the temperature range of high-temperature refractory metal ions to 100℃~3000℃. This temperature range is suitable for the generation of most high-temperature refractory metal ions, improves the metal ion energy range, fills the gap in the generation of high-temperature refractory metal ions by the furnace method, increases the number of reagents assembled, increases the metal ion yield, and maintains the stability of the extracted beam. It meets the user's urgent demand for high-temperature refractory metal ions, improves the efficiency of terminal beam use, and creates favorable conditions for the output of high-temperature refractory metal ions. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the present invention or the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0028] Figure 1 It is a schematic diagram of the overall structure of the metal ion generating device for ECR ion source provided by the utility model;

[0029] Figure 2 This is one of the internal structure schematic diagrams of the metal ion generating device for the ECR ion source provided by the utility model;

[0030] Figure 3 This is the second schematic diagram of the internal structure of the metal ion generating device for the ECR ion source provided by the utility model;

[0031] Figure 4 It is a structural schematic diagram of the high-frequency and high-temperature induction furnace provided by the utility model;

[0032] Figure 5It is a structural schematic diagram of the heating resistance furnace provided by the utility model;

[0033] Figure 6 It is a structural schematic diagram of the feed box body provided by the utility model;

[0034] Figure 7 It is a working topological diagram of the point-shaped focusing heating device provided by the utility model.

[0035] Reference numerals:

[0036] 1. Ion generating cavity; 2. Microwave feeding waveguide; 3. High frequency and high temperature induction furnace; 4. Connecting pipe sleeve; 5. Heating resistor furnace; 6. Metal feed box; 61. Feed box body; 62. Steam outlet; 63. Feeding port; 7. Bias electrode; 701. Bias ionization disk; 702. Negative terminal of bias electrode; 703. Ceramic column; 704. Enameled wire; 705. Long stud; 8. Welding injection assembly; 801. First end cover; 802. Second end cover; 9. Point focusing heating device; 901. Point focusing heater; 902. Focusing heating controller; 903. Infrared probe; 10. Inlet and outlet cooling water pipes; 11. Air intake pipe. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution of the utility model will be clearly and completely described below in conjunction with the drawings in the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0038] In the description of the embodiments of the present utility model, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the embodiments of the present utility model. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0039] In the description of the embodiments of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present utility model can be understood in specific circumstances.

[0040] In the embodiments of the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0041] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model embodiment. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0042] Combine the following Figure 1 to Figure 7 The specific structure and working principle of the metal ion generating device for ECR ion source of the utility model are described.

[0043] One embodiment of the present invention provides a metal ion generating device for an ECR ion source, see Figure 1As shown, it includes an ion generating chamber 1, a microwave feeding waveguide 2, a high-frequency and high-temperature induction furnace 3, a connecting pipe sleeve 4, a heating resistor furnace 5, a metal feed box 6 and a bias electrode 7, wherein the ion generating chamber 1 is constructed as a vacuum environment, one end of the ion generating chamber 1 is an ECR ion source injection end, and the other end is an ECR ion source lead-out end; the microwave feeding waveguide 2 is penetrated through the ECR ion source injection end of the ion generating chamber 1; the high-frequency and high-temperature induction furnace 3 is penetrated through the ECR ion source injection end of the ion generating chamber 1, and the furnace body crucible of the high-frequency and high-temperature induction furnace 3 is located in the ion generating chamber 1; the connecting pipe sleeve 4 is passed through the ECR ion source injection end of the ion generating chamber 1, the outlet end of the connecting tube sleeve 4 is located in the ion generating chamber 1, and the inlet end is located outside the ion generating chamber 1; the heating resistance furnace 5 and the metal feed box 6 are installed at the inlet end of the connecting tube sleeve 4; the metal feed box 6 is provided with a temperature control device; the bias electrode 7 is passed through the ECR ion source injection end of the ion generating chamber 1, the bias ionization disk 701 of the bias electrode 7 is located in the ion generating chamber 1, and the outlet end of the microwave feeding waveguide 2, the outlet end of the high-frequency and high-temperature induction furnace 3 and the end of the connecting tube sleeve 4 are all passed through the bias ionization disk 701.

[0044] It should be understood that the metal ion generating device for the ECR ion source in this embodiment is a combined integrated ion generating device. For the conversion of metal materials from solid to gas, the metal ion generating device in this embodiment has three ways, which can be realized by one of the high-frequency high-temperature induction furnace 3, the heating resistance furnace 5 and the metal feed box 6. Among them, the principle of the high-frequency high-temperature induction furnace 3 is that the induction coil is wound around the outside of the furnace, and the coil is passed through an alternating current. The induction furnace generates an alternating magnetic field due to the action of the alternating current. The metal inside the alternating magnetic field generates an induced potential under the cutting of the magnetic lines of force, thereby inducing an eddy current, the direction of which is opposite to the current direction in the induction coil. The induced current in the metal conductor generates heat when overcoming its own resistance. The rise in the temperature of the metal in the furnace will cause its vapor pressure to increase. When the temperature rises to the solid-gas phase transition temperature of the metal, the solid metal will continuously generate metal vapor in the surrounding space; the heating resistance furnace 5 can be a DC heating resistance furnace, which uses the principle of ohmic heating to heat the crucible, and then heats the metal material loaded in the crucible through the crucible. The rise in metal temperature will lead to an increase in its vapor pressure. When the temperature rises to the solid-gas phase transition temperature of the metal, the solid metal will continuously generate metal vapor in the surrounding space. The metal feed box 6 can use the MIVOC method to convert the metal state. The metal feed box 6 is equipped with a temperature control device to regulate the metal environment in the metal feed box 6, which can vaporize more volatile metal compounds and produce a stable, higher flow intensity and more refractory metal ions for the ECR ion source.

[0045] The metal ion generating device for ECR ion source of this embodiment has the following working process: after the ion source is loaded with a certain high voltage, microwaves are fed into the ion generating cavity 1 through the rectangular microwave feeding waveguide 2 by a microwave machine. When the frequency of the microwaves fed is equal to the cyclotron frequency of the electrons in the magnetic field of the ion generating cavity 1, the electrons in the ion generating cavity 1 will absorb the energy of the microwaves fed by resonance, so that the electrons can be heated and generate high-energy electrons. The high-energy electrons collide with the neutral particles in the ion generating cavity 1, and multi-charged ions are generated through multiple ionization collision processes, and a plasma zone is generated in the ion generating cavity 1. According to the physical state conversion temperature zone characteristics of the metal material, one of the high-frequency high-temperature induction furnace 3, the heating resistance furnace 5 and the metal feed box 6 is selected for metal physical state conversion, wherein the high-frequency high-temperature induction furnace 3 can be suitable for metal physical state conversion of 1500℃~3000℃, the heating resistance furnace 5 can be suitable for metal physical state conversion of 600℃~1500℃, and the metal feed box 6 can be suitable for metal physical state conversion of 100℃~2200℃. When the temperature rises to the solid-gas phase transition temperature of the metal, the solid metal will continuously produce metal vapor in the surrounding space. These vapors slowly enter the plasma zone generated by the microwave feeding waveguide 2. The bias electrode 7 applies a negative voltage to the plasma zone through the bias ionization disk 701 to emit secondary cold electrons to effectively improve the performance of the ECR ion source. The metal vapor is gradually ionized by the plasma in the arc cavity to produce ion beams with different charge states.

[0046] The metal ion generating device for the ECR ion source of this embodiment forms three metal ion generating methods through a combined injection assembly, and uses the MIVOC method to debug the metal feed box 6. The temperature of the metal feed box 6 is regulated by a temperature control device, which can vaporize more volatile metal compounds, and generate a stable higher flow intensity and more refractory metal ions for the ECR ion source; the metal feed box 6 can also use a point-focused heating method to accurately and quickly heat the material in the feed box, which can vaporize more extremely refractory metal compounds and add new ion debugging conditions. The ion beam generated by the high-frequency and high-temperature induction furnace 3 has a high beam flow intensity and is easy to obtain a high temperature. The coreless induction furnace can obtain a high temperature of 3000°C, and has the advantages of easy and rapid heating, good furnace operating performance, local heating, and low oxidation loss of the heated object; the heating resistance furnace 5 is used, and the optimal working temperature is 600-1300°C (the working pressure is 10 -4 ~10 -5Pa), the furnace temperature increases with the increase of heating power. The three metal ion generation methods formed by the combined injection assembly greatly improve the crucible temperature of the ion source crucible method for debugging metal ions, and expand the temperature range of high-temperature refractory metal ions to 100℃~3000℃. This temperature range is suitable for the generation of most high-temperature refractory metal ions, improves the metal ion energy range, fills the gap in the generation of high-temperature refractory metal ions by the furnace method, increases the number of reagents assembled, increases the metal ion yield, and maintains the stability of the extracted beam. It meets the user's urgent demand for high-temperature refractory metal ions, improves the efficiency of terminal beam use, and creates favorable conditions for the output of high-temperature refractory metal ions.

[0047] In some embodiments of the metal ion generating device for ECR ion source provided by the utility model, Figure 2 and Figure 3 As shown, the metal ion generating device further includes a welding injection assembly 8, which is connected to the ECR ion source injection end of the ion generating chamber 1 to form a vacuum seal for the ECR ion source injection end of the ion generating chamber 1; the microwave feeding waveguide 2, the high-frequency and high-temperature induction furnace 3 and the connecting pipe sleeve 4 are all penetrated through the welding injection assembly 8. The welding injection assembly 8 includes a first end cover 801 and a second end cover 802, the first end cover 801 is connected to the ECR ion source injection end of the ion generating chamber 1, the second end cover 802 is located in the ion generating chamber 1, the microwave feeding waveguide 2, the high-frequency and high-temperature induction furnace 3 and the connecting pipe sleeve 4 are all sequentially penetrated through the first end cover 801 and the second end cover 802, and the bias ionization disk 701 is fixed on the end surface of the second end cover 802 away from the first end cover 801. Bolt holes are correspondingly arranged on the bias ionization disk 701 and the second end cover 802, a ceramic ring is arranged in the bolt hole of the second end cover 802, the bias ionization disk 701 and the second end cover 802 are fixed by inserting a molybdenum bolt assembly through the bolt hole, and a ceramic gasket is arranged between the bias ionization disk 701 and the second end cover 802.

[0048] It can be understood that in this embodiment, see Figure 2As shown, the first end cap 801 of the welding injection assembly 8 can be fixed to the ion generating chamber 1 by six bolts, and a rubber gasket is placed inside to ensure the vacuum seal between the ion generating chamber 1 and the injection end of the ECR ion source. The bias ionization disk 701 is fixed to the end face of the second end cap 802 of the welding injection assembly 8 by fixing molybdenum bolts and molybdenum screws. The molybdenum screws and the bolt holes of the second end cap 802 are isolated by stepped ceramic gaskets, and a BeO ceramic gasket is placed between the bias ionization disk 701 and the end face of the second end cap 802. The microwave feeding waveguide 2 is welded to the first end cap 801, and the microwave feeding waveguide 2 passes through the first end cap 801 and extends to the end face of the second end cap 802 away from the first end cap 801. Similarly, the high-frequency and high-temperature induction furnace 3 and the connecting pipe sleeve 4 also pass through the first end cap 801 and extend to the end face of the second end cap 802 away from the first end cap 801. Finally, the plasma zone generated by the microwave feeding waveguide 2, the reflection zone formed by the bias electrode 7, and the ion beam generated by the plasma ionization reaction are all in the area behind the second end cover 802 and away from the first end cover 801. The generated ion beam can be led out from the ECR ion source lead-out end of the ion generating chamber 1.

[0049] The metal ion generating device for ECR ion source of the utility model has three ways to convert metal materials from solid state to gas state, wherein the heating resistance furnace 5 and the metal feed box 6 are installed in the connecting pipe sleeve 4 according to the needs. When the connecting pipe sleeve 4 is installed with the metal feed box 6, the metal feed box 6 needs to be equipped with a temperature control device. In some specific embodiments, the temperature control device is a heating sleeve nested in the outer periphery of the metal feed box 6. The temperature control device is connected to an external DC power supply through an isolation transformer, and the isolation transformer is also connected to a bias electrode 7; a voltage regulator is connected in series in the circuit of the external DC power supply of the isolation transformer to change the input power in real time by adjusting the voltage regulator.

[0050] It can be understood that the temperature control device is tightly nested in the periphery of the volatile metal feed box 6 in the form of a heating sleeve, and the positive and negative cables are led out and connected to the ECR ion source isolation transformer. The temperature control device and the bias power supply of the bias electrode 7 share an isolation transformer. The isolation transformer is connected to the voltage regulator and an external 220V DC power supply. By adjusting the voltage regulator, the input power is changed in real time. While applying a bias to the ion source, power is loaded to the temperature control device of the metal feed box 6 to maintain the volatilization temperature of the metal feed box 6. The temperature control device of the metal feed box 6 and the bias of the bias electrode 7 share a power supply, which can avoid the difficulties caused by adding an additional power supply system at the high-voltage end of the ion source.

[0051] Furthermore, in some other embodiments, a point-focusing heating device 9 is added to the metal feed box 6. The point-focusing heating device 9 can heat the material in the metal feed box 6 accurately and quickly, which can gasify more highly insoluble metal compounds and increase new ion debugging conditions. Specifically, the ion generating chamber 1 is horizontally installed on a platform, and a point-focusing heating device 9 is arranged on the platform. The point-focusing heating device 9 is located on the side of the inlet end of the connecting pipe sleeve 4, and is suitable for heating the metal feed box 6 installed at the inlet end of the connecting pipe sleeve 4. Figure 3 and Figure 6 As shown, the metal feed box 6 includes a feed box body 61, and the feed box body 61 is provided with a feeding port 63 and a steam exhaust port 62, and the feeding port 63 is provided with an openable sealing cover, the metal feed box 6 is installed on the connecting pipe sleeve 4, and a high-precision fine-tuning valve is connected to make the steam exhaust port 62 of the metal feed box 6 connected with the connecting pipe sleeve 4, and the feeding port 63 is used to add metal materials into the feed box body 61, and the point-shaped focused heating device 9 is facing the bottom of the feed box body 61 to form point-shaped focused heating for the metal feed box 6.

[0052] For some specific examples, see Figure 7 As shown, the point focusing heating device 9 includes a point focusing heater 901, a focusing heating controller 902 and an infrared probe 903, wherein the point focusing heater 901 includes a curved radiation cover, a halogen lamp holder is arranged at the center of the curved radiation cover, a power supply interface is arranged outside the curved radiation cover, and the curved radiation cover faces the inlet end of the connecting pipe sleeve 4 to form point focusing heating for the metal feed box 6 installed at the inlet end of the connecting pipe sleeve 4; the focusing heating controller 902 is connected to the power supply interface of the point focusing heater 901; the infrared probe 903 is connected to the focusing heating controller 902, and the infrared probe 903 faces the heating focusing point formed by the point focusing heater 901.

[0053] The point-shaped focusing heater 901 is equipped with a dedicated focusing heating controller 902. The focusing heating controller 902 and the point-shaped focusing heater 901 are placed on the platform and are equal to the high voltage potential extracted from the ion source. The halogen lamp head of the point-shaped focusing heater 901 can generate a light beam with heat when powered on. The scattered light beam is focused through the arc radiation cover to form a point-shaped heating point, which forms a point-shaped focusing heating for the metal feed box 6. By adjusting the output power of the focusing heating controller 902, the focusing range of the point-shaped focusing heater 901 is changed, and the spot range is adjusted. The maximum spot can reach 20mm×20mm, and the bottom of the volatile metal feed box 6 is accurately heated. The maximum heating temperature can reach 2200℃. The infrared probe 903 can be used to measure and feedback the temperature of the heating point, and the heating temperature of the heating point is fed back to the focusing heating controller 902, which is suitable for adjusting the heating temperature of the point-shaped focusing heating device 9.

[0054] When the connecting pipe sleeve 4 is installed as Figure 5 The heating resistance furnace 5 shown is limited by the space of the ion source structure. The heating resistance furnace 5 is a small and compact tantalum high-temperature metal evaporation furnace. It is a DC heating resistance furnace. The DC heating resistance furnace is redesigned structurally. The furnace support components are well designed with water cooling. The stress problem caused by thermal deformation at high temperature is effectively handled through structural analysis. Detailed simulation analysis provides guidance for mechanical mechanism design. Detailed structural analysis is not performed here. The DC heating resistance furnace uses the principle of ohmic heating to heat the crucible, and then heats the metal material loaded in the crucible through the crucible. The rise in metal temperature will cause its vapor pressure to increase. When the temperature rises to the solid-gas phase transition temperature of the metal, the solid metal will continuously generate metal vapor in the surrounding space. These vapors slowly enter the plasma arc chamber through the opening of the crucible to produce a metal ion beam in the next step of ionization.

[0055] When the metal material is converted from solid to gas using a high-frequency high-temperature induction furnace 3, see Figure 4 As shown, the main components of the high-frequency high-temperature induction furnace 3 include an inductor, a furnace body, a power supply, a capacitor, and a control system, which are installed on the welding injection assembly 8. The heated crucible material is tantalum metal, and the crucible is heated into a hollow column. An electromagnetic shielding layer made of copper is provided on the coil jacket to reduce the leakage of the electromagnetic field generated by the coil, thereby reducing the induction heating effect on other components in the ECR plasma arc chamber. The electromagnetic shielding layer is a convolute water-cooling structure. The electromagnetic shielding layer and the coil, and the coil and the crucible are isolated by ceramics, which not only play an insulating role, but also play a role in thermal radiation shielding and thus increase the crucible temperature. The working principle of the high-frequency and high-temperature induction furnace 3 is that the induction coil is wound around the outside of the furnace, and alternating current is passed through the coil. The induction furnace generates an alternating magnetic field due to the action of the alternating current. The metal inside the alternating magnetic field generates an induced potential under the cutting of the magnetic lines of force, thereby inducing an eddy current, and its direction is opposite to the current direction in the induction coil. The induced current in the metal conductor generates heat when overcoming its own resistance. The increase in the metal temperature in the furnace will cause its vapor pressure to increase. When the temperature rises to the solid-gas phase transition temperature of the metal, the solid metal will continuously generate metal vapor in the surrounding space.

[0056] In the structure of a metal ion generating device for an ECR ion source provided by the present invention, again referring to Figure 2As shown, the bias electrode 7 includes a bias ionization disk 701, and also includes a bias electrode negative terminal connector 702, a ceramic column 703, an enameled wire 704 and a long stud 705; the bias electrode negative terminal connector 702 is vacuum-sealed inside and outside the vacuum of the welding injection assembly 8 with the ceramic column 703, and the enameled wire 704 and the long stud 705 are located in the ion generating chamber 1; one end of the long stud 705 is connected to the bias ionization disk 701, and the other end is connected to the enameled wire 704, and the enameled wire 704 is connected to the bias electrode negative terminal connector 702 by bolts. It can be understood that the bias electrode 702 is vacuum-sealed to the first end cover 801 through the ceramic column 703, one end of the bias electrode 702 is located outside the ion generating chamber 1 for connecting to the power supply, and the other end is located inside the ion generating chamber 1 and connected to the enameled wire 704. The bias electrode 702 forms a large number of secondary cold electrons on the bias ionization disk 701 through the enameled wire 704 and the long stud 705 and pushes them into the plasma zone. The metal vapor formed by the heating of the solid metal is gradually ionized by the plasma in the plasma zone to generate ion beams with different charge states.

[0057] In some embodiments of the present invention, see Figure 2 or Figure 3 As shown, the metal ion generating device for the ECR ion source also includes an inlet and outlet cooling water pipe 10 penetrating the ECR ion source injection end of the ion generating chamber 1, and the water inlet and outlet of the inlet and outlet cooling water pipe 10 are both located outside the ion generating chamber 1, and the main body of the inlet and outlet cooling water pipe 10 extends inside the ion generating chamber 1 to perform heat exchange cooling on the inside of the ion generating chamber 1. It can be understood that the inlet and outlet cooling water pipe 10 can be set to various forms, and a circulation pipeline is formed inside the ion generating chamber 1 through the cooling water inlet and outlet, which can be used to cool the high-frequency and high-temperature induction furnace 3, the connecting pipe sleeve 4 and other equipment to prevent damage to other equipment in the ion generating chamber 1 under high temperature conditions.

[0058] In other embodiments of the present invention, see Figure 2 or Figure 3As shown, the metal ion generating device for ECR ion source also includes an air intake pipeline 11 which is arranged in the ion generating cavity 1, and the air intake end of the air intake pipeline 11 is located outside the ion generating cavity 1, and the air outlet end of the air intake pipeline 11 is flush with the outlet end of the microwave feeding waveguide 2, the outlet end of the high-frequency and high-temperature induction furnace 3, and the end of the connecting pipe sleeve 4. The metal ion ionization process can be gasified through the air intake pipeline 11, and some inert gases can be mainly added, which is conducive to the occurrence of the metal ion ionization process. The experimental results show that the effect after gasification is more obvious, and the intensity and stability of the beam are greatly improved, among which the effect of adding neon is the best. This is mainly because the metal ion generating device of the utility model does not have a cold cathode electron gun (negative bias), and cannot provide more electrons to collide with metal atoms and ions, but uses the gasification effect, through the gasified atoms and ionized ions and metal atoms and ions collide multiple times, the result of step-by-step ionization. Furthermore, a cold cathode electron gun can be added to the metal ion generating device of the utility model, which will greatly improve the intensity of the extracted beam.

[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the utility model.

Claims

1. A metal ion generating device for an ECR ion source, characterized in that: include: An ion generating chamber (1), wherein the interior of the ion generating chamber (1) is a vacuum environment, one end of the ion generating chamber (1) is an ECR ion source injection end, and the other end is an ECR ion source extraction end; A microwave feeding waveguide (2) is provided through the ECR ion source injection end of the ion generating cavity (1); A high-frequency and high-temperature induction furnace (3) is disposed through the ECR ion source injection end of the ion generation chamber (1), and a furnace crucible of the high-frequency and high-temperature induction furnace (3) is located in the ion generation chamber (1); A connecting pipe sleeve (4) is provided through the ECR ion source injection end of the ion generating chamber (1), wherein the outlet end of the connecting pipe sleeve (4) is located inside the ion generating chamber (1), and the inlet end is located outside the ion generating chamber (1); A heating resistance furnace (5) and a metal feed box (6), wherein one of the heating resistance furnace (5) and the metal feed box (6) is installed at the inlet end of the connecting pipe sleeve (4); the metal feed box (6) is provided with a temperature control device; A bias electrode (7) is arranged through the ECR ion source injection end of the ion generation cavity (1); a bias ionization disk (701) of the bias electrode (7) is located in the ion generation cavity (1); and the outlet end of the microwave feeding waveguide (2), the outlet end of the high-frequency and high-temperature induction furnace (3) and the end of the connecting pipe sleeve (4) are all arranged through the bias ionization disk (701).

2. The metal ion generating device for ECR ion source according to claim 1, characterized in that: It also comprises a welding injection assembly (8), wherein the welding injection assembly (8) is connected to the ECR ion source injection end of the ion generating chamber (1) to form a vacuum seal for the ECR ion source injection end of the ion generating chamber (1); the microwave feeding waveguide tube (2), the high-frequency and high-temperature induction furnace (3) and the connecting pipe sleeve (4) are all passed through the welding injection assembly (8).

3. The metal ion generating device for ECR ion source according to claim 2, characterized in that: The welding injection assembly (8) comprises a first end cover (801) and a second end cover (802), wherein the first end cover (801) is connected to the ECR ion source injection end of the ion generating chamber (1), and the second end cover (802) is located in the ion generating chamber (1); the microwave feeding waveguide (2), the high-frequency and high-temperature induction furnace (3) and the connecting pipe sleeve (4) all pass through the first end cover (801) and the second end cover (802) in sequence; and the bias ionization disk (701) is fixed to the end surface of the second end cover (802) away from the first end cover (801).

4. The metal ion generating device for ECR ion source according to claim 3, characterized in that: Bolt holes are correspondingly arranged on the bias ionization disk (701) and the second end cover (802), a ceramic ring is arranged in the bolt hole of the second end cover (802), the bias ionization disk (701) and the second end cover (802) are fixed by inserting a molybdenum bolt assembly through the bolt hole, and a ceramic gasket is arranged between the bias ionization disk (701) and the second end cover (802).

5. The metal ion generating device for ECR ion source according to claim 1, characterized in that: The temperature control device is a heating sleeve nested on the outer periphery of the metal feed box (6), and the temperature control device is connected to an external DC power supply via an isolation transformer, and the isolation transformer is also connected to the bias electrode (7); a voltage regulator is connected in series in the circuit of the isolation transformer external DC power supply, so that the input power can be changed in real time by adjusting the voltage regulator.

6. The metal ion generating device for ECR ion source according to claim 5, characterized in that: The ion generating chamber (1) is horizontally mounted on a platform, and a point focusing heating device (9) is also arranged on the platform. The point focusing heating device (9) is located on the side of the inlet end of the connecting pipe sleeve (4) and is suitable for heating a metal feed box (6) mounted on the inlet end of the connecting pipe sleeve (4).

7. The metal ion generating device for ECR ion source according to claim 6, characterized in that: The point-shaped focusing heating device (9) comprises: A point-shaped focusing heater (901), the point-shaped focusing heater (901) comprising a curved radiation cover, a halogen lamp holder being arranged at the center of the curved radiation cover, a power supply interface being arranged outside the curved radiation cover, the curved radiation cover facing the inlet end of the connecting pipe sleeve (4), so as to form a point-shaped focusing heating for a metal feed box (6) installed at the inlet end of the connecting pipe sleeve (4); A focusing heating controller (902) connected to a power supply interface of the point-shaped focusing heater (901); The infrared probe (903) is connected to the focusing heating controller (902), and the infrared probe (903) faces the heating focusing point formed by the point-shaped focusing heater (901).

8. The metal ion generating device for ECR ion source according to any one of claims 1 to 7, characterized in that: The bias electrode (7) comprises the bias ionization disk (701), and also comprises a bias electrode negative terminal (702), a ceramic column (703), an enameled wire (704) and a long stud (705); The enameled wire (704) and the long stud (705) are located in the ion generating chamber (1); one end of the long stud (705) is connected to the bias ionization disk (701), and the other end is connected to the enameled wire (704); the enameled wire (704) is connected to the bias electrode negative terminal (702); the ECR ion source injection end of the ion generating chamber (1) is penetrated by the ceramic column (703); the bias electrode negative terminal (702) is vacuum-sealed to the ceramic column (703) so as to lead the bias electrode negative terminal (702) from the inside of the ion generating chamber (1) to the outside of the ion generating chamber (1).

9. The metal ion generating device for ECR ion source according to any one of claims 1 to 7, characterized in that: The metal ion generating device further comprises an inlet and outlet cooling water pipe (10) which is arranged through the ECR ion source injection end of the ion generating chamber (1), the water inlet and the water outlet of the inlet and outlet cooling water pipe (10) being both located outside the ion generating chamber (1), and the main body of the inlet and outlet cooling water pipe (10) extending inside the ion generating chamber (1) to perform heat exchange cooling on the inside of the ion generating chamber (1).

10. The metal ion generating device for ECR ion source according to any one of claims 1 to 7, characterized in that: The metal ion generating device further comprises an air inlet pipeline (11) passing through the ion generating cavity (1), wherein the air inlet end of the air inlet pipeline (11) is located outside the ion generating cavity (1), and the air outlet end of the air inlet pipeline (11) is flush with the outlet end of the microwave feeding waveguide (2), the outlet end of the high-frequency and high-temperature induction furnace (3), and the end of the connecting pipe sleeve (4).

Images