High-vacuum ion implantation process cavity

Abstract

The utility model provides a high vacuum ion implantation process cavity, which comprises a support assembling component, an ion accommodating component, an ion inflow component, an on-off switching component and a vacuum maintaining component, and is characterized in that the interior of the ion accommodating component can maintain an extremely high vacuum state under the action of the vacuum maintaining component. According to the ion injection device provided by the invention, ions can be ensured not to be interfered by gas molecules in the transmission and injection process, so that the precision and effect of ion injection are improved, and the ions in the ion acceleration mechanism can be efficiently transmitted into the ion accommodating assembly through the design of the ion inflow assembly; due to the introduction of the on-off switching assembly, the whole process cavity has higher flexibility in operation, the vacuum degree in the process cavity is accurately controlled by controlling the on-off state of the switching valve, the gate valve is sealed by adopting a contact surface, and the valve seat is made of polytetrafluoroethylene, so that gas leakage can be effectively prevented, and the service life of the process cavity is prolonged. And the vacuum degree of the process cavity is stable and reliable.

Description

Technical Field

[0001] The utility model relates to integrated circuit production equipment, in particular to a high vacuum ion implantation process cavity. Background Art

[0002] Patent document CN106328558A discloses a process chamber for performing dry process treatment on wafers. The process chamber is provided with an air inlet nozzle and an exhaust port for process gas to enter and exit. The process gas is introduced into the process chamber by the air inlet nozzle and then discharged through the exhaust port. The process chamber is also provided with a wafer carrier and a receiving and placing station. A recessed space is provided on the wafer carrier for the receiving and placing station to embed. The receiving and placing station holds the wafer and the upper surface of the wafer is lower than the upper surface of the wafer carrier. A notch is left on the edge of the wafer carrier. The position of the notch corresponds to the position of the receiving and placing station. The notch is connected to the recessed space for the process gas to pass through. During the process, the air inlet nozzle is inserted into the wafer carrier to a certain depth and close to the upper surface of the wafer. However, the vacuum state of this process chamber is formed by a vacuum pump, which is easy to lose a certain amount of process gas during operation, and its vacuum degree still has room for improvement, affecting its operating performance. Therefore, it is necessary to optimize the structure of this process chamber to overcome the above defects. Utility Model Content

[0003] The utility model aims to provide a high vacuum ion implantation process chamber to improve its operating performance.

[0004] The technical solution adopted by the utility model to solve its technical problems is:

[0005] A high vacuum ion implantation process chamber, comprising:

[0006] A support assembly component is installed in the ion implanter frame through a connector and has an assembly space inside;

[0007] An ion containing assembly is installed in the support assembly, and has an ion containing space inside, which is connected to the target plate mechanism through a valve, and can provide ions for the implantation process to the target plate mechanism;

[0008] An ion inflow component, which is installed in the ion containing component, is in communication with the ion containing space inside the ion containing component, and is in communication with the ion accelerating mechanism, and the ion accelerating mechanism can transport accelerated ions into the ion containing component through the ion inflow component;

[0009] an on-off switching component, the on-off switching component being installed in the ion containing component and being in communication with the ion containing space inside the ion containing component;

[0010] A vacuum maintaining component is installed in the ion containing component and is connected to the on-off switching component. The on-off switching component switches the connection state between the vacuum maintaining component and the ion containing component, and the vacuum maintaining component maintains the ion containing space in the ion containing component in a vacuum state.

[0011] Specifically, the support assembly includes:

[0012] A support base plate, which is arranged in the transverse direction and is installed in the ion implanter frame through connecting bolts;

[0013] The assembly stand is provided with a pair, each assembly stand is respectively installed on the top of the supporting base plate and extends upwards from the supporting base plate, and the ion containing assembly is installed on the top of the assembly stand.

[0014] The ion containment assembly includes:

[0015] The containing box is located above the supporting base plate and is installed on the top of the assembly stand, and an ion containing space is formed inside the containing box.

[0016] The ion inlet assembly includes:

[0017] The inlet end tube is installed on the side of the containing box, the outer end of which extends to the outside of the containing box and is connected to the ion acceleration mechanism, and the inner end of which is connected to the ion containing space inside the containing box. The ions in the ion acceleration mechanism enter the inside of the containing box through the inlet end tube.

[0018] The on-off switching components include:

[0019] A switching valve is installed on the side of the containing box, with its inner end connected to the inside of the containing box and its outer end connected to the vacuum maintaining component. The switching valve switches the on-off state between the vacuum maintaining component and the containing box.

[0020] The vacuum maintenance kit includes:

[0021] A vacuum cold pump is connected to the outer end of the switching valve and can be connected to the interior of the containing box through the switching valve. The vacuum cold pump maintains the interior of the containing box in a vacuum state.

[0022] In one embodiment of the utility model, a vacuum cold pump is composed of a pump body, a condenser, a cooling system and a control system. Its main function is to adsorb and condense the gas molecules in the containment box by low-temperature condensation, thereby maintaining a high vacuum state inside the containment box. The pump body is made of metal material and is provided with a flow channel inside to facilitate the entry of gas molecules into the pump. The condenser is composed of multiple metal sheets or metal meshes, and the surface is coated with adsorption material. When the vacuum cold pump is running, the condenser will be cooled to an extremely low temperature, so that the gas molecules will condense and be adsorbed on the surface of the condenser. The cooling system is responsible for providing coolant to the condenser to maintain its low temperature state. The control system is responsible for monitoring and controlling the operating state of the cold pump, including temperature control, pump operating state monitoring, etc. Its structure adopts the existing technology, so it is not described in detail.

[0023] In one embodiment of the utility model, the switching valve is performed by a gate valve, which is mainly composed of a valve body, a gate and a transmission mechanism, and is sealed by the contact surface between the gate and the valve seat. The valve seat is usually made of materials such as rubber or polytetrafluoroethylene. It has a simple structure, is easy to manufacture and assemble, has good sealing performance, fast opening and closing speed of the fluid, small resistance, and high reliability. Its structure adopts the existing technology, so it is not described in detail.

[0024] The advantages of the utility model are:

[0025] The ion implantation process chamber forms a vacuum state through a vacuum cold pump, and the interior of the ion holding component can maintain an extremely high vacuum degree, which can ensure that the ions are not disturbed by gas molecules during the transmission and implantation process, reduce the loss of ions during the transmission process, and thus improve the accuracy and effect of ion implantation. The design of the ion inlet flow component enables the ions in the ion acceleration mechanism to be efficiently transmitted to the interior of the ion holding component, thereby improving the efficiency of ion implantation. The introduction of the on-off switching component makes the entire process chamber more flexible in operation. By controlling the on-off state of the switching valve, the connection state between the ion holding component and the vacuum maintaining component can be conveniently adjusted, thereby achieving precise control of the vacuum degree in the process chamber. The gate valve adopts contact surface sealing, and the valve seat is made of polytetrafluoroethylene, which can effectively prevent gas leakage and ensure that the vacuum degree of the process chamber is stable and reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a structural schematic diagram of the high vacuum ion implantation process chamber proposed by the utility model;

[0027] Figure 2 is a front view of the process chamber;

[0028] Figure 3 is a top view of the process chamber;

[0029] Figure 4is a side view of the process chamber. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical scheme and advantages of the embodiment of the utility model clearer, the technical scheme in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. The components of the embodiment of the utility model generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiment of the utility model provided in the drawings is not intended to limit the scope of the utility model claimed for protection, but merely represents the selected embodiment of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the utility model.

[0031] like Figure 1 to Figure 4 As shown, the high vacuum ion implantation process chamber proposed by the utility model includes a supporting assembly component, an ion containing component, an ion inflow component, an on-off switching component and a vacuum maintaining component. The supporting assembly component is installed in the ion implantation machine frame through a connecting piece, and has an assembly space inside. The ion containing component is installed in the supporting assembly component, and has an ion containing space inside. The ion containing component is connected to the target plate mechanism through a valve, and can provide ions for the implantation process to the target plate mechanism. The ion inflow component is installed in the ion containing component, and is connected to the ion containing space inside the ion containing component, and is connected to the ion accelerating mechanism. The ion accelerating mechanism can transport accelerated ions to the ion containing component through the ion inflow component. The on-off switching component is installed in the ion containing component, and is connected to the ion containing space inside the ion containing component. The vacuum maintaining component is installed in the ion containing component, and is connected to the on-off switching component. The on-off switching component switches the connection state between the vacuum maintaining component and the ion containing component, and the vacuum maintaining component maintains the ion containing space in the ion containing component in a vacuum state.

[0032] In Example 1, the supporting assembly component includes a supporting base plate 110 and an assembly stand 120. The supporting base plate is arranged horizontally and installed in the ion implanter frame by connecting bolts. A pair of assembly stands are provided, each assembly stand is installed on the top of the supporting base plate and extends above the supporting base plate. The ion containing assembly is installed on the top of the assembly stand.

[0033] The ion containment assembly includes a containment box 200, which is located above the support base plate and installed on the top of the assembly stand, forming an ion containment space therein.

[0034] The ion inlet assembly includes an inlet end tube 300, which is installed on the side of the containing box, with its outer end extending to the outside of the containing box and connected to the ion acceleration mechanism, and its inner end connected to the ion containing space inside the containing box. The ions in the ion acceleration mechanism enter the inside of the containing box through the inlet end tube.

[0035] The on-off switching component includes a switching valve 400, which is installed on the side of the containing box. Its inner end is connected to the inside of the containing box, and its outer end is connected to the vacuum maintaining component. The switching valve switches the on-off state between the vacuum maintaining component and the containing box.

[0036] The vacuum maintaining component includes a vacuum cold pump 500, which is connected to the outer end of the switching valve and can be connected to the inside of the containing box through the switching valve. The vacuum cold pump maintains the inside of the containing box in a vacuum state.

[0037] In Example 2, the supporting assembly component includes a supporting base plate 110 and an assembly stand 120. The supporting base plate is arranged horizontally and installed in the ion implanter frame by connecting bolts. A pair of assembly stands are provided, each assembly stand is installed on the top of the supporting base plate and extends above the supporting base plate. The ion containing assembly is installed on the top of the assembly stand.

[0038] The ion containment assembly includes a containment box 200, which is located above the support base plate and installed on the top of the assembly stand, forming an ion containment space therein.

[0039] The ion inlet assembly includes an inlet end tube 300, which is installed on the side of the containing box, with its outer end extending to the outside of the containing box and connected to the ion acceleration mechanism, and its inner end connected to the ion containing space inside the containing box. The ions in the ion acceleration mechanism enter the inside of the containing box through the inlet end tube.

[0040] The on-off switching component includes a switching valve 400, which is installed on the side of the containing box. Its inner end is connected to the inside of the containing box, and its outer end is connected to the vacuum maintaining component. The switching valve switches the on-off state between the vacuum maintaining component and the containing box.

[0041] The vacuum maintaining component includes a vacuum cold pump 500, which is connected to the outer end of the switching valve and can be connected to the inside of the containing box through the switching valve. The vacuum cold pump maintains the inside of the containing box in a vacuum state.

[0042] In this embodiment, the vacuum cold pump is composed of a pump body, a condenser, a cooling system and a control system. Its main function is to adsorb and condense the gas molecules in the containment box by low-temperature condensation, thereby maintaining a high vacuum state inside the containment box. The pump body is made of metal material and is provided with a flow channel inside to facilitate the entry of gas molecules into the pump. The condenser is composed of multiple metal sheets or metal meshes, and the surface is coated with adsorption material. When the vacuum cold pump is running, the condenser will be cooled to an extremely low temperature, so that the gas molecules will condense and be adsorbed on the surface of the condenser. The cooling system is responsible for providing coolant to the condenser to maintain its low temperature state. The control system is responsible for monitoring and controlling the operating state of the cold pump, including temperature control, pump operating state monitoring, etc. Its structure adopts the existing technology, so it is not described in detail.

[0043] In this embodiment, the switching valve is performed by a gate valve, which is mainly composed of a valve body, a gate and a transmission mechanism, and is sealed by the contact surface between the gate and the valve seat. The valve seat is usually made of materials such as rubber or polytetrafluoroethylene, and has a simple structure, is easy to manufacture and assemble, has good sealing performance, fast opening and closing speed of the fluid, small resistance, and high reliability. Its structure adopts existing technology, so it is not described in detail.

[0044] In this embodiment, a vacuum gauge flange 210 is further provided on the side wall of the containing box, and a vacuum gauge can be installed through the vacuum gauge flange to measure the vacuum degree inside the containing box.

[0045] In this embodiment, an electron neutralizer 220 is further provided on the side wall of the containing box. During the ion implantation process, the impact of the ion beam on the silicon wafer will indeed cause charge to accumulate on the mask surface. The accumulated charge can change the charge balance in the ion beam, resulting in an expansion of the beam spot, uneven dose distribution, and may even break through the surface oxide layer, thereby affecting the performance and reliability of the device. The electron neutralizer can effectively control the charging effect on the surface of the silicon wafer, improve the accuracy and reliability of ion implantation, thereby ensuring that the manufactured device has excellent performance and stability. Its structure adopts existing technology, so it is not described in detail.

[0046] In the description of the present utility model, it should be noted that when terms such as "upper", "lower", "inner", "outer", "left", "right" and the like indicating orientation or positional relationship appear, it should be understood that the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the utility model product is usually placed when in use, or the orientation or positional relationship commonly understood by those skilled in the art, is only for the convenience of describing the present utility model and simplifying the description, and does not indicate or imply that the equipment or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, when terms such as "first" and "second" appear, they are only used to distinguish the description, and cannot be understood as indicating or implying relative importance. In the description of the present utility model, it should also be noted that, unless otherwise clearly specified and limited, terms such as "installation", "setting", and "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal connection of two elements. For those skilled in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

Claims

1. A high vacuum ion implantation process chamber, characterized in that: include: A support assembly component is installed in the ion implanter frame through a connector and has an assembly space inside; An ion containing assembly is installed in the support assembly, and has an ion containing space inside, which is connected to the target plate mechanism through a valve, and can provide ions for the implantation process to the target plate mechanism; An ion inflow component, which is installed in the ion containing component, is in communication with the ion containing space inside the ion containing component, and is in communication with the ion accelerating mechanism, and the ion accelerating mechanism can transport accelerated ions into the ion containing component through the ion inflow component; an on-off switching component, the on-off switching component being installed in the ion containing component and being in communication with the ion containing space inside the ion containing component; A vacuum maintaining component is installed in the ion containing component and is connected to the on-off switching component. The on-off switching component switches the connection state between the vacuum maintaining component and the ion containing component, and the vacuum maintaining component maintains the ion containing space in the ion containing component in a vacuum state.

2. A high vacuum ion implantation process chamber according to claim 1, characterized in that: The support assembly includes: A support base plate, which is arranged in the transverse direction and is installed in the ion implanter frame through connecting bolts; The assembly stand is provided with a pair, each assembly stand is respectively installed on the top of the supporting base plate and extends above the supporting base plate, and the ion containing component is installed on the top of the assembly stand.

3. A high vacuum ion implantation process chamber according to claim 2, characterized in that: The ion containment assembly includes: The containing box is located above the supporting base plate and is installed on the top of the assembly stand, and an ion containing space is formed inside the containing box.

4. A high vacuum ion implantation process chamber according to claim 3, characterized in that: The ion inlet assembly includes: The inlet end tube is installed on the side of the containing box, the outer end of which extends to the outside of the containing box and is connected to the ion acceleration mechanism, and the inner end of which is connected to the ion containing space inside the containing box. The ions in the ion acceleration mechanism enter the inside of the containing box through the inlet end tube.

5. A high vacuum ion implantation process chamber according to claim 4, characterized in that: The on-off switching components include: A switching valve is installed on the side of the containing box, with its inner end connected to the inside of the containing box and its outer end connected to the vacuum maintaining component. The switching valve switches the on-off state between the vacuum maintaining component and the containing box.

6. A high vacuum ion implantation process chamber according to claim 5, characterized in that: The vacuum maintenance kit includes: A vacuum cold pump is connected to the outer end of the switching valve and can be connected to the interior of the containing box through the switching valve. The vacuum cold pump maintains the interior of the containing box in a vacuum state.

7. The high vacuum ion implantation process chamber according to claim 5, characterized in that: The switching valve is a gate valve.

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