Anti-splash device for semiconductor electroplating cleaning cavity

Abstract

The utility model belongs to the field of electroplating, and particularly relates to an anti-splash device for a semiconductor electroplating cleaning cavity, which is characterized in that liquid thrown out by a wafer through high-speed rotation is blocked by a circumferential baffle under the action of centrifugal force and an airflow field to change the motion trail, then falls into the bottom of the cavity, and is finally collected and discharged through a liquid discharge hole. According to the scheme, through the inclined separation blade, water stains or corrosion caused by back splashing to the surface of the wafer is effectively prevented, and the product quality is further improved; meanwhile, the purpose of preventing back splashing is further achieved through the inclined blocking piece of the flexible direction changing structure; meanwhile, through a downward airflow field structure, the vaporific liquid is effectively prevented from returning to the surface of the wafer; therefore, the scheme avoids: (1) part of liquid is splashed back to the surface of the wafer to cause water marks or corrosion after collision; and (2) water marks or corrosion caused by misty liquid drops floating on the surface of the wafer.

Description

Technical Field

[0001] The utility model belongs to the field of electroplating cleaning, in particular to an anti-splashing device for a semiconductor electroplating cleaning chamber. Background Art

[0002] Cleaning processes are widely used in semiconductor processes. For example, most electroplating cleaning chambers use the Spin Dry method. Cleaning liquids such as sulfuric acid and pure water fly out from the edge under the action of centrifugal force during the high-speed rotation of the wafer to achieve the purpose of drying the wafer. The structural designs of each manufacturer are different, but the principle is the same. The chuck clamps the wafer and rotates at high speed to take away the liquid.

[0003] The existing rotary drying device is generally provided with a baffle. When the water thrown out by the wafer in the horizontal position during the rotation hits the baffle, the water's movement trajectory changes due to the resistance of the baffle, and the water turns from the horizontal direction to sliding downward, and finally drains the liquid from the bottom drainage hole.

[0004] Although the above-mentioned baffle method can change the direction of liquid movement from horizontal to downward, since the direction is changed after collision, there is no regularity in the direction of change. In particular, part of the liquid splashes back onto the surface of the wafer after collision. The splashed liquid will cause water marks or corrosion on the upper surface of the crystal, thereby affecting the product yield.

[0005] In summary, the prior art has the problem that the water thrown out by the rotary drying device splashes back onto the surface of the wafer irregularly, thereby causing water marks or corrosion on the crystal surface, thereby affecting the product yield. Utility Model Content

[0006] In view of this, the utility model aims to propose an anti-splashback device for a semiconductor electroplating cleaning chamber to solve the problem in the prior art that water thrown out by a rotary drying device splashes back onto the surface of the wafer irregularly, causing water marks or corrosion on the crystal surface, thereby affecting the product yield.

[0007] In order to achieve the above object, the technical solution of the utility model is implemented as follows:

[0008] An anti-splashing device for a semiconductor electroplating cleaning chamber, comprising an electroplating cleaning chamber formed by a chamber bottom and a circumferential baffle for changing the direction of a motion trajectory, a rotating spindle axially extending out of the electroplating cleaning chamber, a wafer clamp being arranged on the rotating spindle, the wafer clamp clamping a wafer, and a drainage hole being formed on the chamber bottom surface;

[0009] The liquid thrown out by the high-speed rotation of the wafer driven by the rotating spindle changes its motion trajectory under the action of centrifugal force and air flow field, falls into the bottom of the cavity after being blocked by the circumferential baffle, and is finally discharged through the drainage hole after being collected.

[0010] Furthermore, the circumferential baffle is an inwardly inclined baffle, and the inwardly inclined baffle includes a direction-changing portion that forms an inwardly inclined angle with a horizontal plane, and the direction-changing portion is downwardly connected to the guide portion.

[0011] Furthermore, the inclination angle is 30° to 60°.

[0012] At the same time, the utility model also provides an anti-splashback device for a semiconductor electroplating cleaning chamber, including the anti-splashback device based on the above, wherein the circumferential baffle is a flexible redirecting structure;

[0013] The flexible direction-changing structure comprises a strength sponge, and the strength sponge is arranged on the surface of the inwardly inclined baffle plate between the upper limit groove and the lower limit groove.

[0014] Furthermore, the flexibility of the strength sponge (303) is adaptively adjusted according to the kinetic energy of the liquid material, and its hardness is 1 to 100 HA, and its material is a highly soft material.

[0015] Furthermore, a guide groove is provided on the back of the strength sponge, and the guide groove is V-shaped or strip-shaped.

[0016] At the same time, the utility model also provides an anti-splashing device for a semiconductor electroplating cleaning chamber, including the anti-splashing device based on the above, wherein a downward airflow field structure is formed inside the electroplating cleaning chamber.

[0017] Furthermore, the downward airflow field structure includes a negative pressure chamber arranged at the bottom of the electroplating cleaning chamber, and the horizontal end of the negative pressure chamber forms an exhaust hole, and the vertical end forms a drainage hole.

[0018] Furthermore, the included angle between the exhaust hole and the horizontal end is 5° to 85°.

[0019] Furthermore, the cavity bottom adopts a porous plate structure.

[0020] Compared with the prior art, the anti-splashing device for a semiconductor electroplating cleaning chamber described in the utility model has the following beneficial effects:

[0021] The anti-splashback device described in the utility model forms an electroplating cleaning chamber through a chamber bottom and a circumferential baffle. The electroplating cleaning chamber drives the wafer to rotate at high speed through a rotating spindle. A wafer clamp is arranged on the rotating spindle. The wafer clamp clamps the wafer. The liquid on the surface of the wafer is thrown out under the action of centrifugal force and airflow field, and then changes its motion trajectory after being blocked by the circumferential baffle and falls into the chamber bottom. A drainage hole is formed on the surface of the chamber bottom, and finally the liquid is discharged through the drainage hole after being collected. The circumferential baffle is used to change the motion trajectory of the thrown liquid. The utility model is characterized in that: by tilting the baffle, the motion trajectory of part of the liquid after the collision is changed regularly (vertically downward), thereby preventing splashing to the surface of the wafer to cause water marks or corrosion, thereby improving product quality. On this basis, the further improved method of the scheme The solution is: through the inclined baffle of the flexible redirecting structure, when the high-speed droplets encounter the flexible material, the energy is absorbed by the flexible material and the kinetic energy is sharply reduced, thereby further achieving the purpose of preventing splashing. At the same time, a further improved solution of the present scheme also includes a downward airflow field structure formed inside the electroplating cleaning chamber. Through the negative pressure chamber at the bottom of the porous plate, the entire chamber environment forms a uniform and stable downward airflow field. This structure can realize the separation of exhaust and drainage. The mist liquid can also quickly reach the bottom under the action of such a downward airflow field, preventing the mist liquid from returning to the wafer surface. Therefore, the present scheme avoids the following through the basic structure and the improved structure: (1) part of the liquid splashes back onto the surface of the wafer after collision, causing water marks or corrosion; (2) water marks or corrosion caused by the mist droplets floating to the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention. In the accompanying drawings:

[0023] Figure 1 This is a basic structural diagram of the anti-splashback device described in an embodiment of the utility model;

[0024] Figure 2 This is a first improved schematic diagram of the anti-splashback device according to an embodiment of the utility model;

[0025] Figure 3 This is a first improved structural diagram of the anti-splashback device according to an embodiment of the utility model;

[0026] Figure 4 A second improved schematic diagram of the anti-splashback device according to an embodiment of the utility model;

[0027] Figure 5 A second improved structural diagram of the anti-splashback device according to an embodiment of the utility model;

[0028] Figure 6A third improved schematic diagram of the anti-splashback device according to an embodiment of the utility model;

[0029] Figure 7 A third improved structural diagram of the anti-splashback device according to an embodiment of the utility model;

[0030] Description of reference numerals:

[0031] 101-electroplating cleaning chamber, 102-rotating spindle, 103-wafer fixture, 104-wafer, 105-circumferential baffle, 106-drain hole, 107-chamber bottom;

[0032] 201-inward baffle, 202-direction changing portion, 203-flow guiding portion;

[0033] 300-flexible direction-changing structure, 301-upper limit slot, 302-lower limit slot, 303-strength sponge, 305-guide slot;

[0034] 401 - downward air flow field structure, 402 - negative pressure chamber, 403 - exhaust hole, 404 - drainage hole, 405 - porous plate structure. DETAILED DESCRIPTION

[0035] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0036] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.

[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0038] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0039] See also Figure 1 As shown, in an embodiment of the utility model, an anti-splashing device for a semiconductor electroplating cleaning chamber is provided, comprising an electroplating cleaning chamber 101 formed by a chamber bottom 107 and a circumferential baffle 105 for changing the direction of a motion trajectory, a rotating spindle 102 axially extending out of the electroplating cleaning chamber 101, a wafer clamp 103 is arranged on the rotating spindle 102, the wafer clamp 103 clamps a wafer 104, and a drainage hole 106 is formed on the surface of the chamber bottom 107;

[0040] The liquid thrown out by the wafer 104 driven by the rotating spindle 102 to rotate at high speed, under the action of centrifugal force and air flow field, is blocked by the circumferential baffle 105 and changes its motion trajectory, then falls into the cavity bottom 107, and is finally discharged through the drainage hole 106 after being collected.

[0041] The traditional structure of the utility model adopts a vertical circumferential baffle. Such a structure easily causes the thrown water to splash back to the surface of the wafer irregularly, thereby causing water marks or corrosion on the crystal surface, thereby affecting the product yield. The present solution uses a circumferential baffle with improved motion trajectory deflection, namely an inward-inclined baffle. The inward-inclined baffle changes its inclination so that the water thrown out by the wafer in the horizontal position during the rotation hits the inclined baffle, and the motion trajectory of the water changes from horizontal to downward, and finally the liquid is discharged from the bottom drainage hole. The improved method is simple and practical, that is, using the given inclination angle of the inward-inclined baffle, a downward guide can be generated, thereby turning the horizontal direction to downward, and by tilting the baffle, part of the liquid after the collision will have a regular motion trajectory deflection (vertically downward), thereby preventing the back-splashing to the surface of the wafer to cause water marks or corrosion, thereby improving product quality.

[0042] See also Figure 2 , 3 As shown, the circumferential baffle 105 is an inwardly inclined baffle 201 , and the inwardly inclined baffle 201 includes a direction-changing portion 202 that forms an inwardly inclined angle with a horizontal plane, and the direction-changing portion 202 is downwardly connected to the guide portion 203 .

[0043] The utility model forms an inward-inclined baffle plate with an inclined rib (i.e., a direction-changing portion) at the top of the inward-inclined baffle plate, which is then connected to a circumferential rib (i.e., a flow guide portion), and finally forms an inward-inclined circumferential baffle plate. Due to the inclined rib, the shape design can effectively intercept splashing liquid. The anti-splashback baffle plate of the electroplating cleaning chamber is mainly used to prevent splashing of liquid or solution during the electroplating process, effectively reducing corrosion and pollution to the wafer. Since a large number of cleaning processes are used in semiconductor processes, the electroplating cleaning chamber mostly uses the Spin Dry method. Cleaning liquids such as sulfuric acid and pure water fly out from the edge under the action of centrifugal force during the high-speed rotation of the wafer, so as to achieve the purpose of drying the wafer. By controlling the flow direction and distribution of the solution, the uneven coating or impurity deposition caused by splashing is reduced, thereby improving the quality and consistency of the final product. By cleaning the chamber and using the baffle plate, the cleaning efficiency and product quality are improved.

[0044] The inclination angle is 30° to 60°.

[0045] Since the baffles of the utility model are designed with an inclination angle range of 30 to 60 degrees, part of the baffles can be designed to be adjustable in height or angle to accommodate wafers of different sizes, optimize the liquid flow direction, and reduce splashing.

[0046] See also Figure 4 , 5 As shown, at the same time, the utility model also provides an anti-splashing device for a semiconductor electroplating cleaning chamber, including the anti-splashing device based on the above, wherein the circumferential baffle 105 is a flexible redirecting structure 300;

[0047] The flexible direction-changing structure 300 includes a strength sponge 302 , and the strength sponge 302 is disposed on the surface of the inwardly inclined baffle 201 between the upper limit groove 301 and the lower limit groove 302 .

[0048] The utility model adopts a flexible direction-changing structure, which further optimizes the circular baffle for changing the direction of the above-mentioned motion trajectory, that is, the circular baffle adopts a flexible direction-changing structure, which is arranged on the inward-inclined baffle surface between the upper limit groove and the lower limit groove. For the circular baffle for changing the direction of the motion trajectory, there is also an airflow field generated by the high-speed rotation of the wafer, and a drainage port is provided at the bottom. However, because there is no downward flow field at the bottom, the tendency of the mist droplets to move downward by gravity is not obvious. After the rotation speed slowly decreases, the mist droplets will also float back to the surface of the wafer to cause water marks or corrosion (water marks will cause metal oxidation during high-temperature annealing, affecting the next grinding process). This further scheme adopts a novel structure to greatly reduce the splashback of the liquid, reduces product defects, and uses high-strength flexible sponge material, which is tilted and stuck in the upper and lower limit grooves or adhered to the baffle. When the high-speed droplets encounter the flexible material, the energy is absorbed by the flexible material, and the kinetic energy is sharply reduced, so as to achieve the purpose of preventing splashback.

[0049] The flexibility of the strength sponge (303) is adaptively adjusted according to the kinetic energy of the liquid material, and its hardness is 1-100HA, and its material is a highly soft material.

[0050] The utility model adopts a flexible sponge material with high strength and will not be damaged or fallen off under the action of liquid force. The flexibility can be adjusted according to the kinetic energy of the liquid material. The hardness is set at 1 to 100HA. If the kinetic energy is large, a material with high softness is selected. The flexible porous sponge material reduces the kinetic energy of the liquid to avoid splashing.

[0051] A guide groove 305 is disposed on the back of the strength sponge 302 , and the guide groove 305 is in a V-shape or a strip shape.

[0052] The utility model adopts a high-strength flexible sponge material to set a guide groove on the back. The guide groove can be V-shaped or strip-shaped. The liquid that passes through the flexible sponge material can be discharged smoothly from the guide groove. The guide groove behind the flexible sponge material can smoothly discharge the liquid that passes through the sponge material downward.

[0053] See also Figure 6 , 7 As shown, at the same time, the utility model also provides an anti-splashing device for a semiconductor electroplating cleaning chamber, including the anti-splashing device based on the above, wherein a downward airflow field structure 401 is formed inside the electroplating cleaning chamber 101.

[0054] The utility model further optimizes the structure on the basis of the flexible change-of-direction structure to form a downward airflow field structure. The structure generates a downward airflow field through the porous plate at the bottom of the negative pressure structure to quickly drain the mist droplets, thereby avoiding water marks or corrosion caused by the liquid on the upper surface of the crystal, improving product yield and enhancing equipment reliability.

[0055] The downward air flow field structure 401 includes a negative pressure chamber 402 disposed at the bottom of the electroplating cleaning chamber 101 , wherein an exhaust hole 403 is formed at a horizontal end of the negative pressure chamber 402 , and a drainage hole 404 is formed at a vertical end thereof.

[0056] The utility model adopts a negative pressure chamber to form a uniform and stable downward airflow field in the entire chamber environment. An exhaust port and a liquid discharge port are provided in the negative pressure chamber to realize the separation of exhaust and water discharge. The mist liquid can also quickly reach the bottom under the action of such a downward airflow field, thereby preventing the mist liquid from returning to the wafer surface.

[0057] The included angle between the exhaust hole 403 and the horizontal end is 5° to 85°.

[0058] The exhaust hole of the utility model is outwardly directed at a certain angle and flows back to the lower space, thereby ensuring that liquid does not flow into the exhaust pipeline. The liquid discharge port is arranged at the bottom, so that the liquid can be discharged in time.

[0059] The cavity bottom 107 adopts a porous plate structure 405 .

[0060] The utility model adopts a porous plate arranged at the bottom, the bottom of the porous plate is a negative pressure cavity, and the porous plate is adopted to increase the absorption area of ​​the negative pressure cavity, which is beneficial to the drainage and exhaust of the cleaning cavity.

[0061] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A backsplash prevention device for a semiconductor electroplating cleaning chamber, characterized in that: The invention comprises an electroplating cleaning chamber (101) formed by a chamber bottom (107) and a circumferential baffle (105) for changing the direction of a motion trajectory, wherein a rotating spindle (102) axially extends out of the electroplating cleaning chamber (101), a wafer clamp (103) is arranged on the rotating spindle (102), the wafer clamp (103) clamps a wafer (104), and a drainage hole (106) is formed on the surface of the chamber bottom (107); The circumferential baffle (105) is an inward-inclined baffle (201), and the inward-inclined baffle (201) comprises a direction-changing portion (202) forming an inward-inclined angle with a horizontal plane, and the direction-changing portion (202) is downwardly connected to the guide portion (203); The liquid thrown out by the high-speed rotation of the wafer (104) changes its motion trajectory under the action of centrifugal force and air flow field after being blocked by the circumferential baffle (105) and falls into the cavity bottom (107), and is finally discharged through the drainage hole (106) after being collected.

2. The anti-splash device according to claim 1, characterized in that: The inclination angle is 30° to 60°.

3. The anti-splash device according to claim 1, characterized in that: The circumferential baffle (105) comprises a flexible direction-changing structure (300); The flexible direction-changing structure (300) comprises a strength sponge (303), and the strength sponge (303) is arranged on the surface of the inwardly inclined baffle plate (201) between the upper limit groove (301) and the lower limit groove (302).

4. The anti-splash device according to claim 3, characterized in that: The flexibility of the strength sponge (303) is adaptively adjusted according to the kinetic energy of the liquid material, and its hardness is 1-100HA, and its material is a highly soft material.

5. The anti-splash device according to claim 3, characterized in that: A guide groove (305) is arranged on the back of the strength sponge (303), and the guide groove (305) is V-shaped or strip-shaped.

6. The anti-splash device according to claim 1, characterized in that: A downward airflow field structure (401) is formed inside the electroplating cleaning chamber (101).

7. The anti-splashing device according to claim 6, characterized in that: The downward airflow field structure (401) comprises a negative pressure chamber (402) arranged at the bottom of the electroplating cleaning chamber (101), wherein the horizontal end of the negative pressure chamber (402) forms an exhaust hole (403), and the vertical end forms a drainage hole (404).

8. The anti-splashing device according to claim 7, characterized in that: The included angle between the exhaust hole (403) and the horizontal end is 5° to 85°.

9. The anti-splashing device according to claim 6, characterized in that: The cavity bottom (107) adopts a porous plate structure (405).

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