Plasma processing device

Abstract

The utility model provides a plasma processing device which comprises a vacuum reaction chamber which comprises a side wall and a back plate arranged at the top of the side wall; a substrate conveying opening is formed in the side wall and is used for conveying a substrate; the radio frequency generator is positioned above the back plate and is used for providing radio frequency current; the radio frequency generator is connected with a radio frequency transmission piece through a radio frequency matcher; the radio frequency transmission piece and the upper surface of the back plate are arranged at an interval, and a plurality of through holes are formed in the radio frequency transmission piece; the plurality of through holes are arranged along a first direction, and an included angle is formed between the first direction and the side wall where the wafer conveying port is located; and the at least one radio frequency feed-in piece is adjustably mounted in any one of the through holes, is connected with the radio frequency transmission piece and the back plate to form a radio frequency channel, and transmits the radio frequency current into the vacuum reaction cavity. The radio frequency feed-in pieces are arranged in the through holes in different positions of the radio frequency transmission piece, so that the length of a radio frequency current loop is adjusted, and the distribution uniformity of plasmas is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a plasma processing device. Background Art

[0002] In plasma processing equipment, especially plasma enhanced chemical vapor deposition equipment, the uniformity of plasma is crucial to the quality and performance of film formation. The non-uniformity of plasma may lead to uneven film thickness on the substrate surface, thus affecting the performance and yield of the device.

[0003] One of the main reasons for the uneven distribution of plasma is the inconsistent length of the RF current loop in the reaction chamber. Specifically, since the side wall of the reaction chamber of the plasma processing device is provided with a transmission gate valve (i.e., a transmission port), when the RF current flows through the side wall of the reaction chamber, the length of the RF current loop formed on the side wall with the transmission gate valve is inconsistent with the length of the RF current loop formed on the other side wall without the transmission gate valve, which leads to uneven distribution of RF current in different areas of the reaction chamber, thereby affecting the generation and distribution of plasma. Therefore, during the debugging and production stage of the plasma processing device, it is usually necessary to optimize and adjust the layout of the RF feed point to meet specific production process requirements. However, in the prior art, the position of the RF feed point on the plasma processing device is pre-set and cannot be changed, which makes it impossible to adjust the position of the RF feed point according to specific process requirements at the debugging or production site. Utility Model Content

[0004] The utility model aims to provide a plasma processing device to achieve the length adjustment of the radio frequency current loop, thereby improving the uniformity of plasma distribution and ensuring the consistency of the film thickness on the surface of the substrate.

[0005] In order to achieve the above-mentioned purpose, the utility model provides a plasma processing device, which comprises: a vacuum reaction chamber, which comprises a side wall and a back plate arranged on the top of the side wall; a film transmission port is arranged on the side wall for transmitting a substrate; a radio frequency generator is located above the back plate and is used to provide radio frequency current; the radio frequency generator is connected to a radio frequency transmission component through a radio frequency matcher; the radio frequency transmission component is spaced apart from the upper surface of the back plate, and a plurality of through holes are arranged on the radio frequency transmission component; the plurality of through holes are arranged along a first direction, and there is an angle between the first direction and the side wall where the film transmission port is located, and the angle is greater than 0° and less than 180°; at least one radio frequency feed-in component is adjustably installed in any of the through holes and is located between the radio frequency transmission component and the back plate, connecting the radio frequency transmission component and the back plate to form a radio frequency channel to transmit the radio frequency current to the vacuum reaction chamber.

[0006] Optionally, the through holes are evenly spaced and distributed on the radio frequency transmission component.

[0007] Optionally, a plurality of the RF feeding elements are symmetrically arranged in the through holes on the RF transmission element.

[0008] Optionally, the radio frequency transmission element includes at least one band-shaped radio frequency transmission band, and the first direction is an extension direction of the radio frequency transmission band.

[0009] Optionally, a plurality of the radio frequency transmission strips are evenly spaced and distributed above the back plate, and two adjacent radio frequency transmission strips are parallel to each other.

[0010] Optionally, the radio frequency transmission element is arranged at the center above the back plate and / or is symmetrically arranged along the symmetry axis of the back plate.

[0011] Optionally, the first direction is perpendicular to the side wall where the film transmission port is located.

[0012] Optionally, the RF transmission component includes at least one circular RF transmission arc, and the through holes are symmetrically arranged on the RF transmission arcs on both sides of the symmetry axis of the back plate along a first direction, and the first direction is an extension direction of the RF transmission arcs.

[0013] Optionally, there is an inclined angle between a line connecting two adjacent through holes on the radio frequency transmission arc and the side wall where the film transmission port is located, and the range of the inclined angle is greater than 0° and less than 180°.

[0014] Optionally, the plasma processing device further includes: a radio frequency connector, which is arranged between the radio frequency transmission component and the radio frequency matcher, wherein one end of the radio frequency connector is connected to the radio frequency transmission component, and the other end of the radio frequency connector is connected to the radio frequency matcher.

[0015] Optionally, the RF connector includes at least two connecting brackets, and a connecting angle is provided between two adjacent connecting brackets, and the connecting angle ranges from greater than 0° to less than 180°, and is used to connect the RF transmission component and the RF matcher on different horizontal planes.

[0016] Optionally, an insulating support member is disposed below the RF transmission member to support the RF transmission member so that the RF transmission member is spaced apart from the upper surface of the back plate.

[0017] Optionally, a support plate is spaced apart above the back plate, and the edge of the lower surface of the support plate is connected to the side wall of the vacuum reaction chamber; a metal support is provided on the upper surface of the support plate, and the metal support is used to support the RF matcher having an RF transmitting end and an RF receiving end.

[0018] Optionally, an opening is provided on the support plate, a size of the opening matches a size of the radio frequency transmission component, and a position of the radio frequency transmission component on the back plate corresponds to the opening.

[0019] Optionally, the vacuum reaction chamber further comprises a bottom wall, a lower electrode assembly is arranged on the bottom wall, and the lower electrode assembly is connected to the bottom wall via a grounding member.

[0020] Optionally, a gas shower head with a gas channel is connected below the back plate, and the reaction gas is transmitted to the vacuum reaction chamber through the gas channel on the gas shower head.

[0021] Optionally, the RF current loop of the plasma processing device is as follows: the RF generator provides RF current to the RF matcher, the RF current is transmitted to the RF transmission element via the RF transmitting end of the RF matcher, transmitted to the back plate and the gas shower head via the RF feeding element, enters the lower electrode assembly via the plasma between the gas shower head and the lower electrode assembly, and then is transmitted to the RF receiving end of the RF matcher through the grounding element, the bottom wall of the vacuum reaction chamber, the side wall of the vacuum reaction chamber, the support plate and the metal support element in sequence.

[0022] Compared with the prior art, the technical solution of the utility model has at least the following advantages:

[0023] The plasma processing device of the utility model is provided with a plurality of through holes along a first direction on a radio frequency transmission element, so that a radio frequency feed-in element can be installed in the through holes at different positions according to an actual production process, and the position where the radio frequency current is connected to the vacuum reaction chamber is adjusted, thereby changing the transmission length of the radio frequency current transmitted from the radio frequency feed-in element to the side wall provided with a film transmission opening, and realizing the length adjustment of the radio frequency current loop in the vacuum reaction chamber, so that when the radio frequency current flows through the side wall of the vacuum reaction chamber, the length of the radio frequency current loop formed on the side wall provided with the film transmission opening is consistent with that of the radio frequency current loop formed on other side walls not provided with the film transmission opening, thereby improving the distribution uniformity of the plasma in the vacuum reaction chamber, and thus improving the consistency of the film thickness formed on the surface of the substrate.

[0024] Furthermore, by evenly distributing the through holes on the RF transmission element, the controllability of the installation position of the RF feedthrough is improved. At the same time, the RF feedthrough is symmetrically arranged in the through holes on the RF transmission element along the symmetry axis of the back plate, ensuring the symmetry of the RF current loop, thereby improving the uniformity of plasma distribution. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a cross-sectional schematic diagram of a plasma processing device of the utility model;

[0026] Figure 2 It is a top view of the radio frequency transmission element of the first embodiment of the plasma processing device of the utility model;

[0027] Figure 3 It is a structural schematic diagram of a radio frequency transmission element in a plasma processing device according to a second embodiment of the utility model;

[0028] Figure 4 A top view of a radio frequency transmission element of a second embodiment of a plasma processing device of the present utility model;

[0029] Figure 5 A top view of a radio frequency transmission element of a third embodiment of a plasma processing device of the present utility model;

[0030] Figure 6 A top view of a radio frequency transmission element of a fourth embodiment of a plasma processing device of the present utility model;

[0031] Figure 7 It is a top view of a radio frequency transmission element in a plasma processing device according to a fifth embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0033] It should be noted that, in this article, the terms "include", "comprises", "has" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "includes..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

[0034] It should be noted that the drawings are all in a very simplified form and use inaccurate ratios. In the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. They are only used to conveniently and clearly assist in explaining the purpose of an embodiment of the present invention.

[0035] The uniformity of plasma distribution is a key problem that needs to be overcome in plasma processing devices (especially PECVD devices for depositing thin films on large-area substrate surfaces) because it directly affects the uniformity of the film thickness on the substrate surface. One of the main reasons for the uneven distribution of plasma is the inconsistent length of the RF current loop in the reaction chamber. This is because the RF feed point of the plasma processing device is usually set at the center of the back plate at the top of the reaction chamber, and a transmission port is set on the side wall of one side of the reaction chamber, resulting in the RF current flowing through the side wall with the transmission port. The RF transmission path of the RF current needs to bypass the transmission port to form a first RF current loop; when the RF current flows through the side wall without the transmission port, the RF transmission path of the RF current does not need to bypass the transmission port to form a second RF current loop, so that the length of the first RF current loop is greater than the length of the second RF current loop, resulting in an increase in the plasma density in the reaction chamber area corresponding to the first RF current loop, so that the corresponding substrate surface film thickness in the reaction chamber area increases, resulting in uneven film thickness on the surface of the entire substrate W.

[0036] At the same time, since the position of the RF feeding point used to connect the RF current to the reaction chamber in the prior art is fixed, it is impossible to adjust the length of the RF current loop by adjusting the position of the RF feeding point, and thus it is impossible to improve the uniformity of plasma distribution.

[0037] In order to solve the above problems, the utility model provides a plasma processing device, such as Figure 1 and Figure 2As shown, the plasma processing device includes: a vacuum reaction chamber 101, which includes four side walls 111 and a back plate 112 arranged on the top of the side wall 111; a film transmission port 113 penetrating the side wall 111 is provided on at least one side of the side wall 111 of the vacuum reaction chamber 101, through which a substrate W can be taken, thereby realizing the transmission of the substrate W; a radio frequency generator 102, located above the back plate 112, for providing radio frequency current; the radio frequency generator 102 is connected to a radio frequency transmission element 103 through a radio frequency matcher 103. 04; the RF transmission element 104 is spaced apart from the upper surface of the back plate 112, that is, the lower surface of the RF transmission element 104 is not in direct contact with the upper surface of the back plate 112, and there is a certain gap between the two to avoid direct contact between the two to form a short circuit path, which causes the RF current to be unable to be effectively transmitted to the vacuum reaction chamber 101; as an optional embodiment, an insulating support member 108 is provided below the RF transmission element 104 to support the RF transmission element 104 so that the RF transmission element 104 is spaced apart from the upper surface of the back plate 112.

[0038] Among them, Figure 2 As shown, the RF transmission element 104 is provided with a plurality of through holes 141 for installing the RF feedthrough 106; the RF feedthrough 106 is adjustably installed in any of the through holes 141, and the RF feedthrough 106 is located between the RF transmission element 104 and the back plate 112 to connect the RF transmission element 104 and the back plate 112 to form an RF channel, and the RF current is transmitted along the RF channel to the vacuum reaction chamber 101 to form an RF current loop. By setting a plurality of through holes 141 on the RF transmission element 104, the RF feedthrough 106 can be installed in the through holes 141 at different positions according to the actual production process, and the position (i.e., the RF feeding point) at which the RF current is connected to the vacuum reaction chamber 101 is adjusted, thereby changing the transmission length of the RF current from the RF feedthrough 106 to the side wall 111 provided with the transmission port 113, thereby achieving the adjustment of the length of the RF current loop in the vacuum reaction chamber, so that the difference between the RF path of the RF current on the side wall 111 provided with the transmission port 113 and the RF path on the side wall 111 not provided with the transmission port 113 is reduced, thereby making the length of the RF current loop formed along the vacuum reaction chamber consistent, which is beneficial to improving the distribution uniformity of the plasma in the vacuum reaction chamber 101, thereby improving the consistency of the film thickness on the surface of the substrate W.

[0039] The radio frequency transmission element in the present invention can be presented in various forms, and some examples will be described below to illustrate the structure, function and effect of the radio frequency transmission element.

[0040] like Figure 2As shown, in the first embodiment, the RF transmission element 104 is a RF transmission belt extending in a belt shape, and a plurality of through holes 141 are arranged along a first direction 105 on the RF transmission belt. The first direction 105 is the extension direction of the RF transmission belt, and there is an angle between the first direction 105 and the side wall 111 where the transmission port 113 is located, and the angle is greater than 0° and less than 180°. By arranging the through holes 141 along the first direction 105, the vertical distances between each through hole 141 and the side wall 111 where the transmission port 113 is located are different, and then when the RF feedthrough 106 is installed in the through holes 141 at different positions, the position adjustment of the RF feedthrough point can be achieved, and the transmission length of the RF current from the RF feedthrough 106 to the side wall 111 with the transmission port 113 is changed, so that the difference between the RF path of the RF current on the side wall 111 with the transmission port 113 and the RF path on the side wall 111 without the transmission port 113 is reduced, so that the length of the RF current loop formed along the vacuum reaction chamber 101 is consistent, and the uniformity of plasma distribution is improved. Preferably, the through holes 141 are evenly spaced and distributed on the RF transmission element 104 to improve the controllability of the installation position of the RF feedthrough 106.

[0041] Further, in this embodiment, combined with Figure 1 and Figure 2 As shown, the angle formed between the first direction 105 and the side wall 111 where the transmission port 103 is located is 90°, and the RF transmission element 104 is arranged at the center above the back plate 112 (i.e., arranged along the symmetry axis AA of the back plate 112). By arranging the RF transmission element 104 and the side wall 111 where the transmission port 113 is located perpendicular to each other and located at the center above the back plate 112, when the RF feedthrough 106 is adjusted, only the first distance between the RF feedthrough 106 and the side wall 111 where the transmission port 103 is located and the second distance between the side wall 111 opposite to the transmission port 113 are changed, and the distance between the RF feedthrough 106 and the other two side walls 111 (i.e., the two side walls parallel to the RF transmission element 104) is not changed. This is because the other two side walls 111 are not provided with the transmission port 113, so there is no need to adjust the RF path of the RF current on the two side walls. By arranging the RF transmission element 104 at the center above the back plate 112 , the influence on the length of other RF current loops in the vacuum reaction chamber 101 that do not need to be adjusted is reduced, thereby improving the accuracy of adjustment.

[0042] In the second embodiment, if Figure 3 and Figure 4As shown, the plurality of band-shaped RF transmission elements 204 are evenly spaced above the back plate 112, and two adjacent RF transmission elements 204 are parallel to each other, so as to avoid interference between the cross-arranged RF transmission elements 204, which may affect the distribution of the RF current loop in the vacuum reaction chamber 101. Further, each RF transmission belt extends along a first direction 205, and the first direction 205 also has an angle with the side wall 111 where the film transmission port 113 is located, and the angle is greater than 0° and less than 180°. Specifically, in this embodiment, two RF transmission belts are arranged above the back plate 112 in parallel, and the RF transmission belts are symmetrically arranged along the symmetry axis AA of the back plate 112, that is, the two RF transmission belts are respectively arranged on both sides of the symmetry axis AA, and the angle between each RF transmission belt and the side wall 111 where the film transmission port 113 is located is 90°. A plurality of through holes 241 are provided on each of the RF transmission belts, and the through holes 241 are evenly spaced on each RF transmission belt, and the positions of the through holes 241 on the two RF transmission belts correspond one to one, that is, the two corresponding through holes 241 are symmetrically arranged along the symmetry axis AA of the back plate 112. In the present embodiment, the RF feed 106 is symmetrically arranged in the through hole 241 on the RF transmission belt along the symmetry axis AA of the back plate 112 to ensure the symmetry of the RF current loop, thereby improving the uniformity of the plasma distribution. In other embodiments, the RF feeds 106 on two adjacent RF transmission belts can be staggered according to the actual production process, that is, the two RF feeds 106 are arranged in asymmetric through holes 241 to meet the production process requirements, thereby ensuring the consistency of the length of the RF current loop.

[0043] Further, if the number of the RF transmission belts is greater than or equal to 3 and is an odd number, at least one RF transmission belt is arranged at the center above the back plate 112 (i.e., arranged along the symmetry axis AA of the back plate 112), and the remaining RF transmission belts are symmetrically arranged on both sides of the symmetry axis AA of the back plate 112, and the two adjacent RF transmission belts are parallel to each other, thereby ensuring the symmetry of the RF current loop. If the number of the RF transmission belts is greater than 3 and is an even number, the RF transmission belts are symmetrically arranged along the symmetry axis AA of the back plate 112 to ensure the symmetry of the RF current loop. Then, by adjusting the position of the through hole 241 of each RF feedthrough 106 on the RF transmission belt, the length of each RF current loop is adjusted, thereby ensuring the uniformity of plasma distribution and the consistency of film thickness on the surface of the substrate W.

[0044] In the third embodiment, if Figure 5As shown, the RF transmission element 304 is an arc-shaped RF transmission arc, and the RF transmission arc is symmetrically arranged along the symmetry axis AA of the back plate 112. The through holes 341 arranged on the RF transmission arc are evenly spaced along the first direction 305, and each through hole 341 is symmetrically arranged on both sides of the symmetry axis AA of the back plate 112. Among them, the first direction 305 is the arc length extension direction along the RF transmission arc. By arranging each through hole 341 along the arc length extension direction of the RF transmission arc, the vertical distances from each through hole 341 to the side wall 111 where the transmission port 113 is located are different, and the installation position of the through hole 341 of the RF feedthrough 106 on the RF transmission arc is adjusted to change the transmission length of the RF current from the RF feedthrough 106 to the side wall 111 where the transmission port 113 is provided, so as to achieve the adjustment of the length of the RF current loop formed along the vacuum reaction chamber 101.

[0045] Further, in the fourth embodiment, if Figure 6 As shown, the RF transmission element 404 includes two circular RF transmission arcs, and the two RF transmission arcs are symmetrically arranged on both sides of the symmetry axis AA of the back plate 112. The through holes 441 on each RF transmission arc are evenly spaced along the first direction 405, and the positions of the through holes 441 on the two RF transmission arcs correspond one to one, that is, the two corresponding through holes 441 are symmetrically arranged along the symmetry axis AA of the back plate 112. By installing the RF feedthrough 106 in the through holes 441 at different positions, the position of the RF current feeding point is adjusted, thereby changing the transmission length of the RF current from the RF feedthrough 106 to the side wall 111 provided with the transmission port 113, and realizing the adjustment of the length of the RF current loop formed along the vacuum reaction chamber 101.

[0046] It should be noted that, in the third and fourth embodiments, taking the third embodiment as an example, there is an inclined angle between the line connecting the two adjacent through holes 341 on the same side of the symmetry axis AA on the RF transmission arc and the side wall 111 where the transmission port 113 is located, and the range of the inclined angle is greater than 0° and less than 180°, so as to avoid the distances between the two adjacent through holes 341 and the side wall 111 where the transmission port 113 is located being equal and the length adjustment of the RF current loop cannot be achieved. Optionally, the RF feedthrough 106 is symmetrically arranged in the through holes 341 on the RF transmission arc to ensure the symmetry of the RF current loop, thereby improving the uniformity of the plasma distribution.

[0047] Going further, Figure 7 As shown, Figure 7The top view of the RF transmission element 504 of the fifth embodiment provided by the utility model, the RF transmission element 504 is a RF transmission ring in the shape of a closed circular ring (i.e., the central angle of the RF transmission arc is 360°), and a plurality of through holes 541 are evenly arranged along the first direction 505 (i.e., the circumference of the circular ring) of the RF transmission element 504 in the shape of a circular ring, and the plurality of through holes 541 are symmetrically arranged on both sides of the symmetry axis AA of the back plate 112. By installing the RF feedthrough 106 in the through holes 541 at different positions, the position of the RF current feeding point is adjusted, thereby changing the transmission length of the RF current transmitted from the RF feedthrough 106 to the side wall 111 provided with the transmission port 113, and realizing the adjustment of the length of the RF current loop formed along the vacuum reaction chamber 101. Similarly, there is an inclined angle between the line connecting two adjacent through holes 541 and the side wall 111 where the transmission port 113 is located, and the range of the inclined angle is greater than 0° and less than 180°, so as to ensure that the RF feed-through 106 has different adjustment lengths when installed in any through hole 541, provide the RF feed-through point positions required by different production processes, and improve the adjustability of the RF current loop length.

[0048] Among them, Figure 1 As shown, a radio frequency connector 107 is further provided between the radio frequency transmission element 104 and the radio frequency matcher 103, and one end of the radio frequency connector 107 is connected to the radio frequency transmission element 104, and the other end is connected to the radio frequency matcher 103. As an optional embodiment, Figure 3 As shown, the RF connector 107 includes at least two connecting brackets 171, and there is a connection angle between two adjacent connecting brackets 171, and the range of the connection angle is greater than 0° and less than 180°, which is used to connect the RF transmission element 104 and the RF matcher 103 in different horizontal planes. In this embodiment, the RF connector 107 includes two connecting brackets 171 arranged perpendicular to each other (that is, the angle between the two connecting brackets is 90°), which reduces the straight-line propagation on the RF transmission path, helps to reduce the electromagnetic interference that may be generated inside or outside the vacuum reaction chamber 101, and can more effectively utilize the space and improve the utilization rate of the vertical space.

[0049] Further, if Figure 1 As shown, a support plate 114 is arranged above the back plate 112, and the lower edge of the support plate 114 is connected to the side wall 111 of the vacuum reaction chamber 101; a metal support 115 is arranged on the upper surface of the support plate 114, and the metal support 115 is used to support the RF matcher 103 having a RF transmitting end and a RF receiving end. By providing the support plate 114, the influence of the RF matcher 103 on the RF current on the back plate 112 is reduced. Figure 1As shown, the support plate 114 is provided with an opening 116, the size of the opening 116 matches the size of the RF transmission element 104, the position of the RF transmission element 104 on the back plate 112 corresponds to the opening 116, and the RF transmission element 104 is directly exposed to the operator without removing the shielding material. The operator can directly adjust the position of the RF feedthrough 106 on the RF transmission element 104 through the opening 116, that is, the RF feedthrough 106 can be directly set in any through hole 141, thereby improving the production and debugging efficiency.

[0050] like Figure 1 As shown, the vacuum reaction chamber 101 in the plasma processing device provided by the utility model further includes a bottom wall 115, on which a lower electrode assembly 117 is arranged, and the lower electrode assembly 117 is connected to the bottom wall 115 through a grounding member 118. The lower electrode assembly 117 is used to carry the substrate W, and the lower electrode assembly 117 can move up and down in the vertical direction, thereby driving the substrate W to move between the wafer transfer position and the process position. The bottom wall 115 is also provided with a gas extraction port, which is connected to a gas extraction pump 130 and is used to discharge the gas in the vacuum reaction chamber 101. Further, a gas shower head 120 with a gas channel is connected below the back plate 112, and the reaction gas is transmitted to the vacuum reaction chamber 101 through the gas channel on the gas shower head 120. Under the action of the radio frequency current, the reaction gas from the gas shower head 120 is ionized to form plasma, and the plasma is deposited on the surface of the substrate W to form a thin film.

[0051] During the operation of the plasma treatment device, Figure 1As shown, the RF current loop formed by the plasma processing device is: the RF generator 102 provides RF current to the RF matcher 103, the RF current is transmitted to the RF transmission element 104 through the RF transmitting end of the RF matcher 103, and is transmitted to the back plate 112 and the gas shower head 120 through the RF feed-in element 106, enters the lower electrode assembly 117 through the plasma between the gas shower head 120 and the lower electrode assembly 117, and then passes through the grounding element 118, the bottom wall 115 of the vacuum reaction chamber, the side wall 111 of the vacuum reaction chamber, the support plate 114 and the metal support element 115 in sequence to be transmitted to the RF receiving end of the RF matcher 103. By installing the RF feedthrough 106 in the through holes 141 at different positions on the RF transmission element 104, the position of the RF feedthrough point can be adjusted, and the transmission length of the RF current from the RF feedthrough 106 to the side wall 111 with the transmission opening 113 can be changed, that is, the difference between the RF path of the RF current on the side wall 111 with the transmission opening 113 and the RF path on the side wall 111 without the transmission opening 113 is reduced, thereby adjusting the length of the RF current loop, thereby ensuring the consistency of the RF current loop lengths on each side wall 111, and improving the uniformity of plasma distribution.

[0052] In summary, the plasma processing device provided by the utility model, by setting a plurality of through holes 141 along the first direction 105 on the RF transmission element 104, enables the RF feedthrough 106 to be installed in the through holes 141 at different positions according to the actual production process, adjusts the position where the RF current is connected to the vacuum reaction chamber 101, and then changes the transmission length of the RF current from the RF feedthrough 106 to the side wall 111 provided with the film transmission opening 113, and realizes the length adjustment of the RF current loop in the vacuum reaction chamber, so that when the RF current flows through the side wall 111 of the vacuum reaction chamber, the length of the RF current loop formed on the side wall 111 provided with the film transmission opening 113 is consistent with the length of the RF current loop formed on the other side walls 111 without the film transmission opening, thereby improving the distribution uniformity of the plasma in the vacuum reaction chamber 101, thereby improving the consistency of the film thickness on the surface of the substrate W.

[0053] Furthermore, the controllability of the installation position of the RF feedthrough 106 is improved by evenly distributing the through holes 141 on the RF transmission element 104. At the same time, the RF feedthrough 106 is symmetrically arranged in the through holes 141 on the RF transmission element along the symmetry axis AA of the back plate 112, thereby ensuring the symmetry of the RF current loop and thus improving the uniformity of the plasma distribution.

[0054] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. A plasma processing device, characterized in that: Include: A vacuum reaction chamber, comprising a side wall and a back plate arranged on the top of the side wall; the side wall is provided with a film transfer port for transferring the substrate; A radio frequency generator, located above the back plate, for providing radio frequency current; The radio frequency generator is connected to a radio frequency transmission element via a radio frequency matcher; The radio frequency transmission component is spaced apart from the upper surface of the back plate, and a plurality of through holes are arranged on the radio frequency transmission component; A plurality of the through holes are arranged along a first direction, and an angle is formed between the first direction and the side wall where the film transmission port is located, and the angle is greater than 0° and less than 180°; At least one RF feed-in element is adjustably mounted in any of the through holes and is located between the RF transmission element and the back plate, connecting the RF transmission element and the back plate to form a RF channel to transmit the RF current into the vacuum reaction chamber.

2. The plasma processing device according to claim 1, characterized in that The through holes are evenly spaced and distributed on the radio frequency transmission component.

3. The plasma processing apparatus according to claim 1, wherein: The plurality of radio frequency feeding elements are symmetrically arranged in the through holes on the radio frequency transmission element.

4. The plasma processing apparatus according to claim 1, wherein: The radio frequency transmission element includes at least one radio frequency transmission belt in a belt shape, and the first direction is an extension direction of the radio frequency transmission belt.

5. The plasma processing apparatus according to claim 4, wherein: The plurality of radio frequency transmission strips are evenly spaced and distributed above the back plate, and two adjacent radio frequency transmission strips are parallel to each other.

6. The plasma processing device according to claim 1 or 5, characterized in that: The radio frequency transmission element is arranged at the center above the back plate and / or is symmetrically arranged along the symmetry axis of the back plate.

7. The plasma processing device according to claim 1 or 4, characterized in that: The first direction is perpendicular to the side wall where the film transmission port is located.

8. The plasma processing apparatus according to claim 1, wherein: The RF transmission element includes at least one circular RF transmission arc, and the through holes are symmetrically arranged on the RF transmission arcs on both sides of the symmetry axis of the back plate along a first direction, and the first direction is an extension direction along the RF transmission arcs.

9. The plasma processing apparatus according to claim 8, wherein: There is an inclined angle between a line connecting two adjacent through holes on the radio frequency transmission arc and the side wall where the film transmission port is located, and the range of the inclined angle is greater than 0° and less than 180°.

10. The plasma processing apparatus according to claim 1, wherein: Also includes: The radio frequency connector is arranged between the radio frequency transmission component and the radio frequency matcher, one end of the radio frequency connector is connected to the radio frequency transmission component, and the other end is connected to the radio frequency matcher.

11. The plasma processing apparatus according to claim 10, wherein: The RF connector includes at least two connecting brackets, and there is a connecting angle between two adjacent connecting brackets. The connecting angle ranges from greater than 0° to less than 180°, and is used to connect the RF transmission component and the RF matcher on different horizontal planes.

12. The plasma processing apparatus according to claim 1, wherein: An insulating support member is disposed below the radio frequency transmission member, and is used to support the radio frequency transmission member so that the radio frequency transmission member is spaced apart from the upper surface of the back plate.

13. The plasma processing apparatus according to claim 1, wherein: A support plate is arranged above the back plate, and the edge of the lower surface of the support plate is connected to the side wall of the vacuum reaction chamber; a metal support is arranged on the upper surface of the support plate, and the metal support is used to support the RF matcher having an RF transmitting end and an RF receiving end.

14. The plasma processing apparatus according to claim 13, wherein: The support plate is provided with an opening, the size of the opening matches the size of the radio frequency transmission component, and the position of the radio frequency transmission component on the back plate corresponds to the opening.

15. The plasma processing apparatus according to claim 13, wherein: The vacuum reaction chamber further comprises a bottom wall, on which a lower electrode assembly is arranged, and the lower electrode assembly is connected to the bottom wall via a grounding member.

16. The plasma processing apparatus according to claim 15, wherein: A gas shower head with a gas channel is connected below the back plate, and the reaction gas is transmitted to the vacuum reaction chamber through the gas channel on the gas shower head.

17. The plasma processing apparatus according to claim 16, wherein: The RF current loop of the plasma processing device is as follows: the RF generator provides RF current to the RF matcher, the RF current is transmitted to the RF transmission element through the RF transmitting end of the RF matcher, transmitted to the back plate and the gas shower head through the RF feeding element, enters the lower electrode assembly through the plasma between the gas shower head and the lower electrode assembly, and then sequentially passes through the grounding element, the bottom wall of the vacuum reaction chamber, the side wall of the vacuum reaction chamber, the support plate and the metal support element to be transmitted to the RF receiving end of the RF matcher.

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