Driving circuit of semiconductor device and semiconductor integrated module

Abstract

The utility model provides a driving circuit of a semiconductor device and a semiconductor integrated module. The driving circuit comprises a driving chip, and the driving chip is provided with a driving voltage output pin, a voltage feedback pin and a grounding pin. A voltage division circuit is connected between the driving voltage output pin and the grounding pin, the voltage division circuit comprises a first voltage division device and a second voltage division device which are connected in series, and a connection point between the first voltage division device and the second voltage division device is connected to a source electrode of the semiconductor device; a linear voltage regulator is arranged in the driving chip, and the output end of the linear voltage regulator is connected to the driving voltage output pin; a feedback circuit is further connected between the driving voltage output pin and the grounding pin, a feedback node of the feedback circuit is connected to the voltage feedback pin, and the feedback pin is further connected to the linear voltage stabilizer and outputs feedback voltage to the linear voltage stabilizer. The utility model also provides a semiconductor integrated module with the drive circuit. According to the utility model, the production cost of the semiconductor integrated module can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor devices, in particular to a driving circuit of a semiconductor device and a semiconductor integrated module having the driving circuit. Background Art

[0002] Gallium nitride semiconductor devices are a new type of semiconductor devices, which have the characteristics of high electron mobility, high saturation drift velocity, high temperature resistance, etc., and are widely used in a variety of electronic devices. When a gallium nitride semiconductor device is working, it is usually necessary to set up a driving circuit, which outputs a signal to the gallium nitride semiconductor device to drive the gallium nitride semiconductor device to work.

[0003] See also Figure 1 and Figure 2 An existing driving circuit for driving a gallium nitride semiconductor device includes a driving chip U4 and an isolated power supply circuit, wherein a plurality of pins are arranged on a shell of the driving chip U4, including a voltage input pin VIN, a driving voltage output pin VDRV, a voltage feedback pin ADJ, a first driving control pin OUTH, a second driving control pin OUTL, a ground pin GND, etc. The voltage input pin VIN receives a voltage provided by the isolated power supply circuit.

[0004] Isolation power circuit such as Figure 1 As shown, the isolated power supply circuit includes an isolator U1, a transformer T1, a full-bridge rectifier circuit TB1 and a linear regulator U2. The linear regulator U2 outputs a 9V voltage as the input voltage of the driver chip U4, that is, the linear regulator U2 is connected to the voltage input pin VIN of the driver chip U4. In addition, the voltage feedback pin ADJ is also connected to the 9V voltage output by the linear regulator U2. A linear regulator is also provided inside the driver chip U4, and the 5V voltage formed by the linear regulator inside the driver chip U4 is output to the secondary side of the isolator U1.

[0005] The first drive control pin OUTH and the second drive control pin OUTL of the driver chip U4 output a control signal to the gate of the gallium nitride semiconductor device Q1. The periphery of the driver chip U4 is also provided with capacitors C1, C2, a voltage regulator tube D1, a resistor R4, and a voltage regulator capacitor C5, wherein the voltage regulator tube D1 and the resistor R4 are connected in series, and the source of the gallium nitride semiconductor device Q1 is connected to the connection point between the voltage regulator tube D1 and the resistor R4. The voltage regulator tube D1 and the resistor R4 can divide the driving voltage output by the driving voltage output pin VDRV.

[0006] With the source of the gallium nitride semiconductor device Q1 as the reference ground, the gate voltage Vgs of the gallium nitride semiconductor device Q1 is the regulated voltage of the voltage regulator D1 when turned on, and is the difference between the regulated voltage of the voltage regulator D1 and the driving voltage output pin VDRV when turned off. This method can realize the negative voltage shutdown of the driver chip. In addition, in order to realize the shutdown of the gallium nitride semiconductor device Q1 under a relatively low negative voltage, for example, if it needs to be shut down at a voltage of -3V, a linear regulator U2 needs to be set.

[0007] However, since the existing circuit structure requires a complex circuit to be arranged around the gallium nitride semiconductor device Q1, additional components are required to generate the negative voltage required to turn off the gallium nitride semiconductor device Q1, such as the need to set a linear regulator U2, resulting in a large number of components used in the drive circuit, increasing the production cost of the drive circuit and not being conducive to the miniaturization of the drive circuit. Summary of the invention

[0008] The first object of the utility model is to provide a driving circuit for a semiconductor device which has low production cost and is conducive to miniaturization.

[0009] The second object of the present utility model is to provide a semiconductor integrated module using the driving circuit of the semiconductor device mentioned above.

[0010] To achieve the above-mentioned first purpose, the driving circuit of the semiconductor device provided by the utility model includes a driving chip, which is provided with a driving voltage output pin, a voltage feedback pin and a ground pin; a voltage divider circuit is connected between the driving voltage output pin and the ground pin, and the voltage divider circuit includes a first voltage divider device and a second voltage divider device connected in series, and the connection point between the first voltage divider device and the second voltage divider device is connected to the source of the semiconductor device; and a linear regulator is provided in the driving chip, and the output end of the linear regulator is connected to the driving voltage output pin; a feedback circuit is also connected between the driving voltage output pin and the ground pin, and the feedback node of the feedback circuit is connected to the voltage feedback pin, and the feedback pin is also connected to the linear regulator and outputs a feedback voltage to the linear regulator.

[0011] It can be seen from the above scheme that by setting a feedback circuit outside the driver chip, the feedback circuit divides the driving voltage output pin and then feeds it back to the voltage feedback pin, and the voltage of the voltage feedback pin can be output to the linear regulator in the driver chip. In this way, by adjusting the structure of the feedback circuit to change the voltage of the feedback node, the requirements of different types of driver chips can be adapted, and the driving requirements of different semiconductor devices can be met. In this way, the isolation power supply circuit does not need to be provided with a linear regulator, which can reduce the number of components required for the drive circuit, thereby reducing the production cost of the drive circuit and realizing the miniaturization of the drive circuit.

[0012] A preferred solution is that the feedback circuit is provided with a third voltage divider device and a fourth voltage divider device connected in series, and a connection point between the third voltage divider device and the fourth voltage divider device is connected to the voltage feedback pin.

[0013] It can be seen that by changing the resistance values ​​of the third voltage divider device and the fourth voltage divider device, the voltage ratio of the feedback node can be changed. When a lower negative voltage shutdown is required, the appropriate resistance values ​​of the third voltage divider device and the fourth voltage divider device can be set according to the shutdown voltage requirements, thereby eliminating the need to set a linear regulator outside the driver chip.

[0014] A further solution is that the third voltage divider is connected between the driving voltage output pin and the voltage feedback pin, and the fourth voltage divider is connected between the voltage feedback pin and the ground pin.

[0015] It can be seen that the third voltage divider device and the fourth voltage divider device can divide the voltage of the driving voltage output pin, and feedback to the linear regulator is achieved through the divided voltage, which can meet the working requirements of the linear regulator.

[0016] A further solution is that a voltage stabilizing capacitor is connected between the fourth voltage divider and the ground pin.

[0017] It can be seen that by setting a voltage stabilizing capacitor, the voltage received by the voltage feedback pin can be made more stable, thereby avoiding sudden changes in the voltage of the voltage feedback pin.

[0018] A further solution is that one of the first voltage divider device and the second voltage divider device is a voltage regulator tube, and the other of the first voltage divider device and the second voltage divider device is a voltage divider resistor.

[0019] It can be seen that by setting one of the voltage divider devices as a Zener diode, the gate voltage of the semiconductor device when it is turned on or off can be clamped through the voltage stabilizing effect of the Zener diode, thereby avoiding the occurrence of unstable gate voltage.

[0020] An optional solution is that both the first voltage divider device and the second voltage divider device are voltage divider resistors; the first voltage divider device is connected in parallel with a voltage regulator tube, or the second voltage divider device is connected in parallel with a voltage regulator tube.

[0021] It can be seen that one of the voltage-dividing resistors is connected in parallel with the voltage-stabilizing diode, and the gate voltage of the semiconductor device can be stabilized when it is turned on or off through the clamping of the voltage-stabilizing diode.

[0022] A further solution is that the driver chip is further provided with a first drive control pin and a second drive control pin, a first resistor is connected between the first drive control pin and the gate of the semiconductor device, and a second resistor is connected between the second drive control pin and the gate of the semiconductor device.

[0023] It can be seen that the switching speed of the semiconductor device can be adjusted by adjusting the resistance values ​​of the first resistor and the second resistor, so that the switching speed adjustment of the semiconductor device is very flexible and convenient.

[0024] To achieve the above-mentioned second purpose, the semiconductor integrated module provided by the utility model includes a semiconductor device, the semiconductor device has a gate and a source; and, also includes a driving circuit of the above-mentioned semiconductor device, a first driving control pin and a second driving control pin of the driving chip output a signal to the gate of the semiconductor device, and the source of the semiconductor device is connected to the connection point between the first voltage divider device and the second voltage divider device.

[0025] A further solution is that the semiconductor integrated module further includes an isolation power supply circuit, which is connected to a voltage input pin of the driver chip and outputs a voltage to the driver chip.

[0026] It can be seen that by providing an isolated power supply circuit, interference of the external power supply on the driver chip can be avoided.

[0027] A further solution is that the isolated power supply circuit includes an isolator, a transformer and a full-bridge rectifier circuit connected in sequence, and the full-bridge rectifier circuit outputs a voltage to the driver chip.

[0028] It can be seen that the isolated power supply circuit does not have a linear regulator, and the full-bridge rectifier circuit directly outputs voltage to the driver chip, which can simplify the structure of the isolated power supply circuit and reduce the production cost of the driver circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is an electrical schematic diagram of an isolated power supply circuit of an existing semiconductor integrated module.

[0030] Figure 2 This is a circuit diagram of a driving circuit of a conventional semiconductor device.

[0031] Figure 3 It is an electrical schematic diagram of an isolated power supply circuit of the first embodiment of the semiconductor integrated module of the utility model.

[0032] Figure 4 It is a circuit diagram of the first embodiment of the driving circuit of the semiconductor device of the utility model.

[0033] Figure 5 It is a circuit diagram of a driving chip of the first embodiment of the driving circuit of the semiconductor device of the utility model.

[0034] Figure 6 It is an electrical schematic diagram of an isolated power supply circuit of the second embodiment of the semiconductor integrated module of the utility model.

[0035] Figure 7It is a circuit diagram of the second embodiment of the driving circuit of the semiconductor device of the utility model.

[0036] Figure 8 It is a circuit diagram of the third embodiment of the driving circuit of the semiconductor device of the utility model.

[0037] Fig. 9 It is a circuit diagram of a fourth embodiment of a driving circuit of a semiconductor device of the utility model.

[0038] Fig.10 It is a circuit diagram of the fifth embodiment of the driving circuit of the semiconductor device of the utility model.

[0039] The present invention will be further described below with reference to the accompanying drawings and embodiments. DETAILED DESCRIPTION

[0040] The driving circuit of the semiconductor device provided by the utility model is used to output a driving voltage to the semiconductor device, for example, to drive semiconductor devices such as gallium nitride to work. The utility model sets a feedback circuit between the driving voltage output pin and the voltage feedback pin of the driving chip, and uses the feedback circuit to perform voltage feedback on the linear voltage regulator inside the driving chip. By changing the resistance values ​​of the two voltage dividers of the feedback circuit, the voltage division ratio at the feedback node can be changed. For semiconductor devices that require a lower negative voltage shutdown, the output voltage of the linear voltage regulator inside the driving chip can also be adjusted to meet its working requirements by changing the resistance values ​​of the two voltage dividers of the feedback circuit, so that there is no need to set an additional linear voltage regulator outside the driving chip, thereby avoiding the arrangement of too many components on the printed circuit board, reducing the volume of the driving circuit, and reducing the production cost of the driving circuit.

[0041] First embodiment:

[0042] See also Figure 3 and Figure 4 The driving circuit of this embodiment includes a driving chip U14 and an isolated power supply circuit, wherein the isolated power supply circuit is as follows: Figure 3 As shown, it includes an isolator U11, a transformer T11 and a full-bridge rectifier circuit TB11. The full-bridge rectifier circuit TB11 outputs a voltage of +9V to the driver chip U14.

[0043] See also Figure 5 The driver chip U14 has a package shell, on which a plurality of pins are arranged, including a voltage input pin VIN, a drive voltage output pin VDRV, a first drive control pin OUTH, a second drive control pin OUTL, a ground pin GND and a voltage feedback pin ADJ. The voltage input pin VIN is used to receive an input voltage of an isolated power supply circuit, for example, to receive a +9V voltage output by a full-bridge rectifier circuit TB11.

[0044] The driving chip U14 is provided with a first linear regulator 11, a second linear regulator 12 and a protection circuit 13. The first linear regulator 11 and the second linear regulator 12 are both connected to the voltage input pin VIN and receive the input voltage. The first linear regulator 11 steps down the input voltage to form a 5V voltage and outputs it through the pin LDO5. The 5V voltage can be provided to the secondary side of the isolator U11, and the primary side of the transformer T11 is connected to the secondary side of the isolator U11.

[0045] The second linear regulator 12 also receives the input voltage and steps down the input voltage to form a driving voltage. The second linear regulator 12 is also connected to the driving voltage output pin VDRV, and the formed driving voltage is output through the driving voltage output pin VDRV. A transistor Q13 is connected between the driving voltage output pin VDRV and the first driving control pin OUTH. When the switch Q13 is turned on, the voltage output by the first driving control pin OUTH is substantially equal to the driving voltage output by the driving voltage output pin VDRV.

[0046] A resistor R18 is connected between the first drive control pin OUTH and the second drive control pin OUTL, and the third resistor R18 is grounded through the transistor Q14. In this way, the resistor R18 forms a voltage drop between the first drive control pin OUTH and the second drive control pin OUTL, so that the voltage output by the second drive control pin OUTL is lower than the voltage output by the first drive control pin OUTH. Figure 4 , the first drive control pin OUTH and the second drive control pin OUTL both output voltage to the gate of the gallium nitride semiconductor device Q11. Specifically, a first resistor Ron_H1 is connected between the first drive control pin OUTH and the gate of the gallium nitride semiconductor device Q11, and a second resistor Roff_H1 is connected between the second drive control pin OUTL and the gate of the gallium nitride semiconductor device Q11. By adjusting the resistance values ​​of the first resistor Ron_H1 and the second resistor Roff_H1, the switching speed of the gallium nitride semiconductor device Q11 can be adjusted. Therefore, when designing the circuit, the resistance values ​​of the first resistor Ron_H1 and the second resistor Roff_H1 can be determined according to the switching speed requirements of the gallium nitride semiconductor device Q11, so that the switching speed adjustment of the gallium nitride semiconductor device Q11 is very flexible.

[0047] In addition, the drive circuit is also provided with a voltage divider circuit, such as Figure 4As shown, it is connected between the driving voltage output pin VDRV and the ground pin GND, wherein the voltage divider circuit includes a voltage regulator tube D11 and a resistor R14 connected in series, wherein the voltage regulator tube D11 constitutes a first voltage divider device, the resistor R14 constitutes a second voltage divider device, and the source of the gallium nitride semiconductor device Q11 is connected to the connection point between the voltage regulator tube D11 and the resistor R14. The voltage divider circuit also includes two voltage regulator capacitors, for example, including a voltage regulator capacitor C11 and a voltage regulator capacitor C12, the voltage regulator capacitor C11 is connected in parallel with the voltage regulator tube D11, and the voltage regulator capacitor C12 is connected in parallel with the resistor R14. The voltage regulator capacitor C11 and the voltage regulator capacitor C12 are provided to make the voltage output to the source of the gallium nitride semiconductor device Q11 more stable, and avoid the voltage fluctuation of the source of the gallium nitride semiconductor device Q11.

[0048] In this embodiment, a feedback circuit is also connected between the driving voltage output pin VDRV and the ground pin GND. Figure 4 As shown, the feedback circuit is provided with a third voltage divider device and a fourth voltage divider device connected in series, wherein the third voltage divider device is a voltage divider resistor R12, the third voltage divider device is a voltage divider resistor R13, the voltage divider resistor R12 is connected between the drive voltage output pin VDRV and the voltage feedback pin ADJ, and the voltage divider resistor R13 is connected between the voltage feedback pin ADJ and the ground pin GND. In this way, the voltage of the drive voltage output pin VDRV will be output to the voltage feedback pin ADJ after being divided by the third voltage divider device and the fourth voltage divider device, that is, it will be output to the second linear regulator 12 of the driver chip U14. Furthermore, a voltage stabilizing capacitor is also connected between the voltage divider resistor R13 as the fourth voltage divider device and the ground pin GND. In this way, the second linear regulator 12 can adjust the voltage it outputs according to the feedback voltage of the voltage feedback pin ADJ.

[0049] from Figure 4 It can be seen that the first drive control pin OUTH and the second drive control pin OUTL output signals to the gate of the gallium nitride semiconductor device Q11, and the source of the gallium nitride semiconductor device Q11 is connected to the connection point of the voltage regulator D11 and the resistor R14. In this way, with the source of the gallium nitride semiconductor device Q11 as the reference ground, the gate voltage Vgs of the gallium nitride semiconductor device Q11 is the regulated voltage of the voltage regulator D11 when it is turned on, and is the difference between the regulated voltage of the voltage regulator D11 and the driving voltage outputted by the driving voltage output pin VDRV when it is turned off. This method can realize the negative voltage shutdown of the driving chip.

[0050] Different types of gallium nitride semiconductor devices Q11 have different requirements for their turn-off voltages. When a lower negative voltage turn-off is required, the resistance values ​​of the third voltage divider device and the fourth voltage divider device can be adjusted when designing the driving circuit, so that the second linear regulator 12 can generate a higher voltage, for example, a voltage of +9V can be formed on the driving voltage output pin VDRV, which can meet the negative voltage turn-off requirement of the gallium nitride semiconductor device Q11.

[0051] Compared with the traditional semiconductor integrated module, this embodiment does not need to set a linear regulator in the isolated power supply circuit, and uses the linear regulator in the driver chip U14 and the feedback circuit to achieve a higher voltage output of the drive voltage output pin VDRV to meet the negative voltage shutdown requirement of the gallium nitride semiconductor device Q11. On the one hand, it can reduce the production cost of the drive circuit and the semiconductor integrated module, and on the other hand, the drive circuit has fewer components, which is conducive to the miniaturization of the semiconductor integrated module.

[0052] Second embodiment:

[0053] In the first embodiment, the gallium nitride semiconductor device is driven by a single transistor, that is, one driver chip drives one gallium nitride semiconductor device to work. In practical applications, a half-bridge drive method can also be used, see Figure 6 and Figure 7 In the half-bridge driving mode, the power isolation circuit includes two groups of isolation circuits. The first group of isolation circuits includes an isolator U21, a transformer T21 and a rectifier circuit TB21, and its output end outputs a 9V DC voltage, that is, H_9V. The second group of isolation circuits includes an isolator U22, a transformer T22 and a rectifier circuit TB22, and its output end outputs a 9V DC voltage, that is, L_9V.

[0054] In the half-bridge driving mode, two gallium nitride semiconductor devices Q21 and Q22 are connected in series, wherein the driving chip U24 is used to drive the gallium nitride semiconductor device Q21, and the driving chip U28 is used to drive the gallium nitride semiconductor device Q22. The first group of isolation circuits is connected to the voltage input pin VIN of the driving chip U24 and outputs a voltage, and the second group of isolation circuits is connected to the voltage input pin VIN of the driving chip U28 and outputs a voltage. The internal structure of the driving chips U24 and U28 is the same as that of the driving chip of the first embodiment, and will not be repeated.

[0055] In addition, a voltage divider circuit and a feedback circuit are provided outside the driver chip U24. The voltage divider circuit includes a voltage regulator tube D21 and a voltage divider resistor R24 ​​connected in series, and a voltage regulator capacitor C21 is connected in parallel with the voltage regulator tube D21, and a voltage regulator capacitor C22 is connected in parallel with the voltage divider resistor R24. The feedback circuit includes a voltage divider resistor R22 and a voltage divider resistor R23 connected in series. The voltage divider resistor R22 is connected between the drive voltage output pin VDRV and the voltage feedback pin ADJ of the driver chip U24, and the voltage divider resistor R23 is connected between the voltage feedback pin ADJ and the ground pin GND.

[0056] Similarly, a voltage divider circuit and a feedback circuit are provided outside the driver chip U28, the voltage divider circuit includes a voltage regulator tube D22 and a voltage divider resistor R25 connected in series, and a voltage regulator capacitor C23 is connected in parallel with the voltage regulator tube D22, and a voltage regulator capacitor C24 is connected in parallel with the voltage divider resistor R25. The feedback circuit includes a voltage divider resistor R27 and a voltage divider resistor R28 connected in series, the voltage divider resistor R27 is connected between the drive voltage output pin VDRV and the voltage feedback pin ADJ of the driver chip U28, and the voltage divider resistor R28 is connected between the voltage feedback pin ADJ and the ground pin GND.

[0057] Third embodiment:

[0058] See also Figure 8 The driving circuit includes a driving chip U34 and an isolated power supply circuit. The structure of the isolated power supply circuit is the same as that of the first embodiment and will not be described in detail. The driving chip U34 is provided with a voltage input pin VIN, a driving voltage output pin VDRV, a first driving control pin OUTH, a second driving control pin OUTL, a ground pin GND and a voltage feedback pin ADJ. Among them, the voltage input pin VIN is used to receive the input voltage of the isolated power supply circuit, and the first driving control pin OUTH and the second driving control pin OUTL output signals to the gate of the gallium nitride semiconductor device Q31. The internal structure of the driving chip U34 is the same as that of the first embodiment and will not be described in detail.

[0059] A voltage divider circuit and a feedback circuit are provided outside the driving chip U34. The voltage divider circuit includes a voltage divider resistor R35 and a voltage divider resistor R34 connected in series. The voltage divider resistor R35 is connected in parallel with the voltage regulator tube D31, and the voltage regulator capacitor C31 is connected in parallel with the voltage divider resistor R35, and the voltage regulator capacitor C32 is connected in parallel with the voltage divider resistor R34. The gate of the gallium nitride semiconductor device Q31 is connected to the connection point between the voltage divider resistor R35 and the voltage divider resistor R34.

[0060] When the gallium nitride semiconductor device Q31 needs to be driven to turn on, the gate-source voltage Vgs(on) of the gallium nitride semiconductor device Q31 = Vdrv*R35 / (R34+R35), and when the gallium nitride semiconductor device needs to be driven to turn off, the gate-source voltage Vgs(off) of the gallium nitride semiconductor device = Vdrv*R34 / (R34+R35). The purpose of setting the voltage regulator D31 is that when the voltage of the voltage-dividing resistor R35 suddenly changes, for example, when the voltage is higher than the voltage-regulating value of the voltage regulator D31, the voltage regulator D31 is broken down, and the voltage is stabilized at the voltage-regulating value of the voltage regulator D31, thereby protecting the circuit. Based on the low driving voltage of the gallium nitride semiconductor device, the voltage-regulating value of the voltage regulator D31 is preferably 6.2V or 5.1V.

[0061] The feedback circuit includes a voltage divider resistor R32 and a voltage divider resistor R33 connected in series. The voltage divider resistor R32 is connected between the driving voltage output pin VDRV and the voltage feedback pin ADJ of the driving chip U34, and the voltage divider resistor R33 is connected between the voltage feedback pin ADJ and the ground pin GND.

[0062] Fourth embodiment:

[0063] See also Fig. 9 The driving circuit includes a driving chip U44 and an isolated power supply circuit. The structure of the isolated power supply circuit is the same as that of the first embodiment and will not be described in detail. The driving chip U44 is provided with a voltage input pin VIN, a driving voltage output pin VDRV, a first driving control pin OUTH, a second driving control pin OUTL, a ground pin GND and a voltage feedback pin ADJ. Among them, the voltage input pin VIN is used to receive the input voltage of the isolated power supply circuit, and the first driving control pin OUTH and the second driving control pin OUTL output signals to the gate of the gallium nitride semiconductor device Q41. The internal structure of the driving chip U44 is the same as that of the first embodiment and will not be described in detail.

[0064] A voltage divider circuit and a feedback circuit are provided outside the driver chip U44. The voltage divider circuit includes a voltage divider resistor R45 and a voltage divider resistor R44 connected in series. The voltage divider resistor R44 is connected in parallel with the voltage regulator tube D41, and the voltage regulator capacitor C41 is connected in parallel with the voltage divider resistor R45, and the voltage regulator capacitor C42 is connected in parallel with the voltage divider resistor R44. The gate of the gallium nitride semiconductor device Q41 is connected to the connection point between the voltage divider resistor R45 and the voltage divider resistor R44.

[0065] The feedback circuit includes a voltage divider resistor R42 and a voltage divider resistor R43 connected in series. The voltage divider resistor R42 is connected between the drive voltage output pin VDRV and the voltage feedback pin ADJ of the drive chip U44, and the voltage divider resistor R43 is connected between the voltage feedback pin ADJ and the ground pin GND.

[0066] Fifth embodiment:

[0067] See also Fig.10 The driving circuit includes a driving chip U54 and an isolated power supply circuit. The structure of the isolated power supply circuit is the same as that of the first embodiment and will not be described in detail. The driving chip U54 is provided with a voltage input pin VIN, a driving voltage output pin VDRV, a first driving control pin OUTH, a second driving control pin OUTL, a ground pin GND and a voltage feedback pin ADJ. Among them, the voltage input pin VIN is used to receive the input voltage of the isolated power supply circuit, and the first driving control pin OUTH and the second driving control pin OUTL output signals to the gate of the gallium nitride semiconductor device Q51. The internal structure of the driving chip U54 is the same as that of the first embodiment and will not be described in detail.

[0068] A voltage divider circuit and a feedback circuit are provided outside the driver chip U54. The voltage divider circuit includes a voltage divider resistor R54 and a voltage regulator tube D51 connected in series, and a voltage regulator capacitor C51 is connected in parallel with the voltage divider resistor R54, and a voltage regulator capacitor C52 is connected in parallel with the voltage regulator tube D51. The gate of the gallium nitride semiconductor device Q51 is connected to the connection point between the voltage divider resistor R54 and the voltage regulator tube D51. It can be seen that in this embodiment, the arrangement of the voltage divider resistor and the voltage regulator tube of the voltage divider circuit is opposite to that of the first embodiment.

[0069] The feedback circuit includes a voltage divider resistor R52 and a voltage divider resistor R53 connected in series. The voltage divider resistor R52 is connected between the driving voltage output pin VDRV and the voltage feedback pin ADJ of the driving chip U54, and the voltage divider resistor R53 is connected between the voltage feedback pin ADJ and the ground pin GND.

[0070] It can be seen that, since the utility model sets a feedback circuit outside the driver chip, by changing the resistance value of the two voltage-dividing resistors of the feedback circuit, the voltage value output by the drive voltage output pin VDRV can be changed, thereby adapting to the negative voltage shutdown requirements of different types of gallium nitride semiconductor devices. Since there is no need to set up an additional linear regulator in the isolated power supply circuit, the production cost of the drive circuit can be reduced, and it is conducive to the miniaturization of semiconductor integrated modules.

[0071] Finally, it should be emphasized that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various changes and modifications. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. Driving circuit of semiconductor device, including: A driving chip, wherein the driving chip is provided with a driving voltage output pin, a voltage feedback pin and a ground pin; A voltage divider circuit is connected between the driving voltage output pin and the ground pin, the voltage divider circuit comprises a first voltage divider device and a second voltage divider device connected in series, and a connection point between the first voltage divider device and the second voltage divider device is connected to a source of the semiconductor device; Features: A linear regulator is provided in the driving chip, and an output end of the linear regulator is connected to the driving voltage output pin; A feedback circuit is also connected between the driving voltage output pin and the ground pin, a feedback node of the feedback circuit is connected to the voltage feedback pin, and the feedback pin is also connected to the linear regulator and outputs a feedback voltage to the linear regulator.

2. The driving circuit of a semiconductor device according to claim 1, characterized in that: The feedback circuit is provided with a third voltage dividing device and a fourth voltage dividing device connected in series, and a connection point between the third voltage dividing device and the fourth voltage dividing device is connected to the voltage feedback pin.

3. The driving circuit of a semiconductor device according to claim 2, characterized in that: The third voltage divider is connected between the driving voltage output pin and the voltage feedback pin, and the fourth voltage divider is connected between the voltage feedback pin and the ground pin.

4. The driving circuit of a semiconductor device according to claim 2, characterized in that: A voltage stabilizing capacitor is also connected between the fourth voltage divider and the ground pin.

5. The driving circuit of a semiconductor device according to any one of claims 1 to 4, characterized in that: One of the first voltage divider device and the second voltage divider device is a voltage regulator tube, and the other of the first voltage divider device and the second voltage divider device is a voltage divider resistor.

6. The driving circuit of a semiconductor device according to any one of claims 1 to 4, characterized in that: The first voltage divider device and the second voltage divider device both include voltage divider resistors; The first voltage divider device is connected in parallel with a voltage regulator tube, or the second voltage divider device is connected in parallel with a voltage regulator tube.

7. The driving circuit of a semiconductor device according to any one of claims 1 to 4, characterized in that: The driver chip is also provided with a first drive control pin and a second drive control pin. A first resistor is connected between the first drive control pin and the gate of the semiconductor device, and a second resistor is connected between the second drive control pin and the gate of the semiconductor device.

8. Semiconductor integrated modules, including: A semiconductor device, wherein the semiconductor device has a gate and a source; Features: It also includes a driving circuit of the semiconductor device as described in any one of claims 1 to 7, wherein the first driving control pin and the second driving control pin of the driving chip output signals to the gate of the semiconductor device, and the source of the semiconductor device is connected to the connection point between the first voltage divider device and the second voltage divider device.

9. The semiconductor integrated module according to claim 8, characterized in that: The device also includes an isolation power supply circuit, which is connected to a voltage input pin of the driver chip and outputs a voltage to the driver chip.

10. The semiconductor integrated module according to claim 9, characterized in that: The isolated power supply circuit includes an isolator, a transformer and a full-bridge rectifier circuit which are connected in sequence, and the full-bridge rectifier circuit outputs voltage to the driver chip.

Images