Single-tube semiconductor laser diode densely-arranged beam shaping and coupling device

Abstract

The utility model provides a beam shaping and coupling device with densely arranged single-tube semiconductor laser diodes, which relates to the field of laser devices and comprises a semiconductor array laser configured to emit a first beam array; the collimation system is arranged on a light beam emergent light path of the semiconductor array laser and is configured to collimate the fast axis and the slow axis of the first light beam array to obtain a second light beam array; the beam shrinking system is arranged on a light beam emergent light path of the collimation system and is configured to shrink fast axis light spots of the second light beam array to obtain a third light beam array; the fast and slow axis conversion system is arranged on a light beam emergent light path of the beam shrinking system and is configured to rotate the fast and slow axis of the third light beam array by 90 degrees to obtain a fourth light beam array; the beam expanding system is arranged on a light beam emergent light path of the fast and slow axis conversion system and is configured to expand a slow axis light spot of the fourth light beam array to obtain a fifth light beam array; and the focusing system is arranged on a light beam emergent light path of the fast and slow axis conversion system and is configured to focus the fifth light beam array.

Description

[0001] This utility model claims priority to Chinese Patent Application No. 202323304512.0 filed on December 5, 2023 and Chinese Patent Application No. 202323370242.3 filed on December 11, 2023, the entire contents of which are incorporated by reference into this utility model. Technical Field

[0002] The utility model relates to the technical field of laser devices, in particular to a beam shaping coupling device with densely arranged single-tube semiconductor laser diodes. Background Art

[0003] In the prior art, there are roughly two ways of shaping coupling of semiconductor laser diodes. One is to first collimate the fast axis of the long strips (bars) of semiconductor laser diodes arranged side by side, and then use a cylindrical mirror array to compress the slow axis of each diode. Because such lasers are arranged too closely, if the spots are to not interfere with each other, the slow axis focal length of the cylindrical mirror array for slow axis collimation cannot be made large, which results in a large focal spot in the slow axis direction during coupling. In view of the obvious disadvantages of this shaping coupling method, another bar shaping coupling method has been developed, that is, first collimate the fast axis of each diode of the bar, use a fast-slow axis conversion lens group to rotate the fast-slow axis of each spot in the bar by 90 degrees, rearrange the spots of the bar, and then collimate the slow axis. This shaping method solves the problem of large focused spots.

[0004] However, there are some problems with the above two shaping methods: the laser chips are arranged too closely, and as the power of a single chip increases, heat dissipation becomes difficult; the optical path debugging of each link must be powered on to light up the bar, but some special semiconductor materials have strict requirements on the working and use environment. In the absence of suitable protective gas and a good dust-free environment, the exposed power-on bar will inevitably cause the bar optical power to decay or even fail. During fast-axis collimation, the distance between the fast-axis collimation lens and the chip is too short, most of which are within 100 microns, which can easily damage the chip end face during the debugging process, causing the chip to fail. Utility Model Content

[0005] In view of this, the utility model provides a single-tube semiconductor laser diode densely arranged beam shaping coupling device, which is used to at least solve the above technical problems.

[0006] The utility model provides a single-tube semiconductor laser diode densely arranged beam shaping coupling device, comprising: a semiconductor array laser, configured to emit a first beam array; a collimation system, arranged on an optical path where the semiconductor array laser beam emerges, configured to collimate the fast axis and slow axis of the first beam array to obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis direction; a beam reduction system, arranged on an optical path where the collimation system beam emerges, configured to reduce the light spot of the second beam array in the fast axis direction and keep the light spot in the slow axis direction unchanged to obtain a third beam array; a fast-slow axis conversion system, arranged on an optical path where the beam of the beam emerges from the beam reduction system, configured to rotate the fast-slow axis of the third beam array by 90 degrees to obtain a fourth beam array; a beam expansion system, arranged on an optical path where the beam of the fast-slow axis conversion system emerges, configured to expand the light spot of the fourth beam array in the slow axis direction and keep the light spot in the fast axis direction unchanged to obtain a fifth beam array; and a focusing system, arranged on an optical path where the beam of the beam expansion system emerges, configured to focus the light spot of the fifth beam array to a target size.

[0007] According to an embodiment of the utility model, a semiconductor array laser comprises: at least two semiconductor laser diode single chips arranged along a slow axis direction, the semiconductor laser diode single chip being configured to emit a laser beam; a reflector disposed on an optical path of an outgoing light beam of the semiconductor laser diode single chip, and configured to change the direction of the laser beam to obtain a first beam array; wherein at least two semiconductor laser diode single chips and the reflector are hermetically packaged to obtain a semiconductor array laser.

[0008] According to an embodiment of the utility model, the collimation system includes one of a spherical mirror lens array and an aspherical mirror lens array; and is configured to simultaneously collimate the fast axis and the slow axis of the first light beam array.

[0009] According to an embodiment of the utility model, the collimation system is configured to collimate the fast axis and the slow axis of the first light beam array respectively; wherein, when the fast axis is collimated, the collimation system adopts one of an aspheric cylindrical mirror, a cylindrical mirror, a cylindrical mirror group array, and an aspheric cylindrical mirror array; when the slow axis is collimated, the collimation system adopts one of multiple aspheric mirrors, multiple cylindrical mirrors, a cylindrical mirror array, and an aspheric cylindrical mirror array.

[0010] According to an embodiment of the utility model, the beam reduction system includes: a first lens configured to converge the light spot in the fast axis direction of the second beam array; a second lens configured to shape the converged light spot in the fast axis direction into quasi-parallel light to obtain a third beam array.

[0011] According to an embodiment of the utility model, the first lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group.

[0012] According to an embodiment of the utility model, the second lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group, and the focal length of the first lens is greater than the focal length of the second lens.

[0013] According to an embodiment of the utility model, the fast-slow axis conversion system includes one of a cylindrical mirror pair, an aspherical mirror pair, a stepped reflector, and a micro-prism stack, and the cylindrical mirror pair and the aspherical mirror pair are tilted 45 degrees relative to the fast axis or the slow axis direction.

[0014] According to an embodiment of the utility model, the beam expansion system includes: a third lens, configured to converge or diffuse the light spot in the slow axis direction of the fourth light beam array; a fourth lens, configured to shape the converged or diffused light spot in the slow axis direction into quasi-parallel light, amplify the light spot in the slow axis direction, and keep the light spot in the fast axis direction unchanged, so as to obtain a fifth light beam array.

[0015] According to an embodiment of the utility model, the third lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group; the fourth lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group; the focal length of the third lens is smaller than the focal length of the fourth lens.

[0016] According to an embodiment of the present utility model, the focusing system includes one of a single spherical mirror, an aspherical mirror, multiple spherical mirrors, a combined lens of aspherical mirrors, and a group of multiple cylindrical mirrors.

[0017] According to an embodiment of the present invention, the single-tube semiconductor laser diode densely arranged beam shaping coupling device further includes: a beam reflection separation system and a beam reflection combining system. The beam reflection separation system is arranged between the collimation system and the beam reduction system, or between the beam reduction system and the fast-slow axis conversion system, and is configured to separate and arrange the second beam array or the third beam array, increase the distance between the beams in the array and improve the consistency of the pointing of each beam; the beam reflection combining system is arranged between the fast-slow axis conversion system and the beam expansion system, or between the beam expansion system and the focusing system, and is configured to closely arrange the fourth beam array or the fifth beam array, reduce the distance between the beams, and improve the consistency of the pointing of each beam.

[0018] According to an embodiment of the utility model, the single-tube semiconductor laser diode densely arranged beam shaping coupling device also includes: a beam reflection arrangement system, which is arranged between the collimation system and the beam reduction system and is configured to rearrange the beams in the second beam array to improve the consistency of the beam pointing.

[0019] According to an embodiment of the utility model, the single-tube semiconductor laser diode densely arranged beam shaping coupling device also includes: a reflective two-dimensional beam arrangement system, which is arranged before the focusing system and is configured to make a two-dimensional arrangement of multiple fifth beam arrays, and can also make a two-dimensional arrangement of multiple fifth beam arrays after polarization beam combining.

[0020] According to an embodiment of the utility model, the single-tube semiconductor laser diode densely arranged beam shaping coupling device also includes: a polarization beam combining system, which is arranged between the collimation system and the focusing system and is configured to perform polarization beam combining on two second beam arrays or two third beam arrays or two fourth beam arrays or two fifth beam arrays or to perform polarization beam combining on two two-dimensional arrangement arrays that have not been polarization-combined.

[0021] The single-tube semiconductor laser diode densely arranged beam shaping coupling device provided by the embodiment of the utility model can at least achieve the following technical effects:

[0022] The fast and slow axes are used for collimation, and then the light spot in the fast axis direction is reduced by the beam reduction system while the light spot in the slow axis direction remains unchanged. After the fast and slow axes of the beam array are rotated 90 degrees by the fast and slow axis conversion system, the light spot in the slow axis direction is expanded while the light spot in the fast axis direction remains unchanged. Based on the interaction between the functions of the beam reduction system, the fast and slow axis conversion system and the beam expansion system, the distance between the collimation system and the semiconductor array laser is increased, which avoids damage to the chip during the debugging process and reduces the difficulty of debugging, so that the beam shaping after the fast and slow axes are collimated at the same time can be well achieved. In addition, during the optical path debugging process of the beam shaping device, because the semiconductor array laser is pre-packaged with protective gas in an airtight manner, the problem of the bar bar being exposed and powered on without suitable protective gas and a good dust-free environment, resulting in the attenuation or even failure of the bar bar optical power.

[0023] The semiconductor array laser is formed by airtight packaging of at least two semiconductor laser diode single chips and reflectors arranged along the slow axis direction, and then the lasers emitted by multiple semiconductor laser diode single chips are collimated in fast and slow axes based on the collimation system. Compared with the way that a single bar is arranged too closely, the heat dissipation effect is good, which solves the traditional heat dissipation problem. In addition, there is no need to set up a fast axis array, a slow axis collimation array, etc. for each light-emitting point in the overly dense bar, which can greatly reduce the precision of the collimation device, better control the material cost, and reduce the complexity and debugging difficulty of the beam shaping device.

[0024] After the fast and slow axes are aligned by a large focal length collimation system, the spot is shaped based on the beam reduction system, the fast and slow axis conversion system and the beam expansion system. Because the fast and slow axis collimation system has a large focal length, it can further increase the distance between the collimation system and the semiconductor array laser compared to directly accelerating the axis collimation lens in front of the bar bar, thus avoiding damage to the chip during debugging, reducing the difficulty of debugging, improving production efficiency, improving product yield, improving product quality, and expanding the types of packaged materials. In addition, because the large focal length fast and slow axis collimation system can increase the distance between the collimation system and the semiconductor array laser, there is enough space for pre-airtight packaging of the semiconductor array laser, which further protects the chip compared to densely arranged bar bars. At the same time, it can also further reduce the complexity of debugging the beam shaping device.

[0025] The beam shaping effect is further guaranteed by rationally designing the specific components of the collimation system, beam reduction system, fast-slow axis conversion system and beam expansion system. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other purposes, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0027] Figure 1 The structure of a beam shaping coupling device with densely arranged single-tube semiconductor laser diodes according to an embodiment of the utility model is schematically shown.

[0028] Figure 2 The structure of a beam shaping coupling device with densely arranged single-tube semiconductor laser diodes according to another embodiment of the utility model is schematically shown.

[0029] Figure 3 The structure diagram of the collimation system according to the embodiment of the utility model is schematically shown.

[0030] Figure 4 The diagram schematically shows the conversion principle of a cylindrical mirror pair and an aspherical mirror pair according to an embodiment of the utility model.

[0031] Figure 5 The conversion principle diagram of the step reflector and the micro-sheet prism stack according to the embodiment of the utility model is schematically shown. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, not all of them. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0033] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "include", "comprises", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0034] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In the description of the present invention, it should be understood that the terms "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the subsystem or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0036] Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present invention. The shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual size, proportion, and actual positional relationship. In addition, in the present invention, any reference symbol between brackets should not be constructed as a limitation to the present invention.

[0037] Similarly, in order to simplify the present invention and help understand one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment, figure or description thereof. The description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0038] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0039] Figure 1 The structure of a beam shaping coupling device with densely arranged single-tube semiconductor laser diodes according to an embodiment of the utility model is schematically shown. Figure 2 The structure of a beam shaping coupling device with densely arranged single-tube semiconductor laser diodes according to another embodiment of the utility model is schematically shown.

[0040] like Figure 1 and Figure 2 As shown, the single-tube semiconductor laser diode densely arranged beam shaping coupling device may include a semiconductor array laser A, a collimation system B, a beam reduction system C, a fast-slow axis conversion system D, a beam expansion system E and a focusing system F.

[0041] The semiconductor array laser A is configured to emit a first light beam array.

[0042] The collimation system B is arranged on the optical path of the light beam emitted by the semiconductor array laser A, and is configured to collimate the fast axis and slow axis of the first beam array to obtain a second beam array, wherein the light beams of the second beam array are arranged along the slow axis direction.

[0043] The beam reduction system C is arranged on the optical path of the light beam emitted by the collimation system B, and is configured to reduce the light spot in the fast axis direction of the second beam array and keep the light spot in the slow axis direction unchanged, so as to obtain the third beam array.

[0044] The fast-slow axis conversion system D is arranged on the optical path of the light beam emitted by the beam reduction system C, and is configured to rotate the fast-slow axis of the third light beam array by 90 degrees to obtain a fourth light beam array.

[0045] The beam expansion system E is arranged on the optical path of the light beam emitted by the fast-slow axis conversion system D, and is configured to expand the light spot of the fourth beam array in the slow axis direction and keep the light spot in the fast axis direction unchanged, so as to obtain the fifth beam array.

[0046] The focusing system F is arranged on the optical path of the light beam emitted by the beam expansion system E, and is configured to focus the light spot of the fifth beam array to a target size.

[0047] In some embodiments, the semiconductor array laser A may include a semiconductor laser diode single chip and a reflector. The number of semiconductor laser diode single chips is at least two, at least two semiconductor laser diode single chips are arranged along the slow axis direction, and the semiconductor laser diode single chip is configured to emit a laser beam. The reflector is arranged on the optical path of the semiconductor laser diode single chip light beam, and is configured to change the direction of the laser beam to obtain a first beam array. It should be understood that the semiconductor array laser can be disassembled and packaged into 2 or more independent sub-arrays, and then synthesized into a beam array through optical methods such as reflection.

[0048] According to the embodiment of the present invention, the collimation system B adopts a large focal length collimation system.

[0049] In some embodiments, the collimation system B is one of a spherical mirror lens array and an aspherical mirror lens array.

[0050] Figure 3 The structure diagram of the collimation system according to the embodiment of the utility model is schematically shown.

[0051] like Figure 3 As shown, the collimation system in this embodiment is an aspheric mirror lens array, which includes at least two aspheric lenses 1. At least two aspheric lenses 1 are formed into an aspheric mirror lens array by molding, and the aspheric mirror lens array is configured to simultaneously collimate the fast axis and the slow axis of the first light beam array.

[0052] In some embodiments, the collimation system B can also be configured to collimate the fast axis and slow axis of the first light beam array respectively. When the fast axis is collimated, the collimation system B adopts one of an aspherical cylindrical mirror, a cylindrical mirror, a cylindrical mirror array, and an aspherical cylindrical mirror array; when the slow axis is collimated, the collimation system B adopts one of a plurality of aspherical cylindrical mirrors, a plurality of cylindrical mirrors, a cylindrical mirror array, and an aspherical cylindrical mirror array. In some embodiments, the beam reduction system C includes a first lens 2 and a second lens 3. The first lens 2 is configured to converge the light spot in the fast axis direction of the second light beam array. The second lens 3 is configured to shape the light spot in the converged fast axis direction into quasi-parallel light, thereby compressing the large light spot in the fast axis direction into a small light spot, and the slow axis direction remains unchanged, thereby obtaining a third light beam array.

[0053] There are many ways to implement the first lens 2, including but not limited to one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group.

[0054] There are many ways to implement the second lens 3, including but not limited to one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group. The focal length of the first lens 2 is greater than the focal length of the second lens 3.

[0055] The beam reduction system C can be implemented by a pair of lenses, or by a combination of two or more lenses to achieve the same function, as long as the output spot is smaller than the input spot. The lens groups in the beam reduction system C can be separate or integrated, and the present invention does not limit this.

[0056] In some embodiments, the fast-slow axis conversion system D includes one of a cylindrical mirror pair, an aspherical mirror pair, a step reflector, and a micro-prism stack. The cylindrical mirror pair and the aspherical mirror pair are tilted 45 degrees relative to the fast axis or the slow axis. The structure of the beam shaping coupling device composed of the cylindrical mirror pair or the aspherical mirror pair in the fast-slow axis conversion system D is shown in FIG. Figure 1 As shown in the figure, the structure diagram of the beam shaping coupling device composed of a stepped reflector or a micro-prism stack is shown in Figure 2 As shown. The fast and slow axis conversion system D of the corresponding structure can be selected according to the actual application space display.

[0057] Figure 4 The diagram schematically shows the conversion principle of a cylindrical mirror pair and an aspherical mirror pair according to an embodiment of the utility model.

[0058] like Figure 4As shown, for example, before the third light beam array enters the cylindrical mirror pair or the aspherical mirror pair, the horizontal direction is the slow axis direction, and the vertical direction is the fast axis direction. After being processed by the cylindrical mirror pair or the aspherical mirror pair, the horizontal direction is the fast axis direction, and the vertical direction is the slow axis direction, that is, the fast and slow axes of the third light beam array are rotated 90 degrees.

[0059] Figure 5 The conversion principle diagram of the step reflector and the micro-sheet prism stack according to the embodiment of the utility model is schematically shown.

[0060] like Figure 5 As shown, for example, the step reflector is a step structure composed of two upper and lower reflectors. Before the third light beam array enters the step reflector, the horizontal direction is the fast axis direction and the vertical direction is the slow axis direction. The third light beam array is reflected by the reflector above the step reflector for the first time, and then reflected by the reflector below the step reflector for the second time, so that the fast and slow axes of the third light beam array are rotated 90 degrees, so that the slow axis direction is along the horizontal direction and the fast axis direction is along the vertical direction.

[0061] For another example, the micro-chip prism stack is composed of two micro-chip prism arrays arranged perpendicularly to each other. Before the third light beam array enters the micro-chip prism stack, the horizontal direction is the slow axis direction, and the vertical direction is the fast axis direction. The third light beam array passes through the micro-chip prism below the micro-chip prism stack for the first time, and then passes through the micro-chip prism above the micro-chip prism stack for the second time, and the fast and slow axes of the third light beam array are rotated 90 degrees, so that the fast axis direction is along the horizontal direction and the slow axis direction is along the vertical direction.

[0062] By means of the beam conversion of the beam reduction system C, the beam expansion system E and the fast-slow axis conversion system D, the beam quality in the slow axis direction is improved while the beam quality in the fast axis direction is reduced, thereby achieving the balance of the two-dimensional beam.

[0063] In some embodiments, the beam expansion system E may include a third lens 4 and a fourth lens 5. The third lens 4 is configured to converge or diffuse the light spot in the slow axis direction of the fourth beam array. The fourth lens 5 is configured to shape the converged or diffused light spot in the slow axis direction into quasi-parallel light, amplify the light spot in the slow axis direction, and keep the light spot in the fast axis direction unchanged, thereby obtaining a fifth beam array.

[0064] There are many ways to implement the third lens 4, including but not limited to one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group.

[0065] There are many ways to implement the fourth lens 5, including but not limited to one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group. The focal length of the third lens is smaller than the focal length of the fourth lens.

[0066] The beam expansion system E can be implemented by a pair of lenses, or by a combination of two pairs or multiple lenses to achieve the same function, as long as the output spot is larger than the input spot. The lens group in the beam expansion system E can be separate or integrated, and the present invention does not limit this.

[0067] In some embodiments, the focusing system F may include a single spherical mirror, an aspherical mirror, multiple spherical mirrors, a combination lens of aspherical mirrors, or a cylindrical mirror group, and the present invention is not limited thereto.

[0068] In some embodiments, the single-tube semiconductor laser diode densely arranged beam shaping coupling device also includes: a beam reflection separation system and a beam reflection combining system. The beam reflection separation system is arranged between the collimation system and the beam reduction system, or between the beam reduction system and the fast-slow axis conversion system, and is configured to separate and arrange the beams in the second beam array or the third beam array, and improve the consistency of the beam pointing. It should be understood that the system is to open the spacing between the beams, so the beam reflection separation system will have different configurations of the number of reflectors according to different separation distance requirements. The beam reflection combining system is arranged between the fast-slow axis conversion system and the beam expansion system, or between the beam expansion system and the focusing system, and is configured to closely arrange the fourth or fifth beam array and improve the consistency of the pointing of each beam. It should be understood that the introduction of this beam reflection separation system and beam reflection combining system is to reduce the precision of the fast-slow axis conversion system in the system and improve the consistency of the beam array pointing. Each beam in the beam array between the beam reflection separation system and the beam reflection combining system can be shaped separately with separate optical elements, or it can be an integrated optical element to shape the entire array at the same time. When the light beams are pulled apart by a sufficient distance, the unit size in the fast-slow axis conversion system can be increased accordingly. When the light spot is no longer disturbed during the fast-slow axis conversion, the beam reduction system can be set before the fast-slow axis conversion system, or between the fast-slow axis conversion system and the beam expansion system, or between the beam expansion system and the beam reflection and combining system.

[0069] In some embodiments, the single-tube semiconductor laser diode densely arranged beam shaping coupling device further includes: a beam reflection arrangement system, which is arranged between the collimation system and the beam reduction system and is configured to rearrange the beams in the second beam array to improve the consistency of the beam pointing. It should be understood that the system is to improve the directivity of the entire beam, so the beam reflection arrangement system needs to select different solutions according to the directivity of the beam, and the number of reflectors is not the same.

[0070] In some embodiments, the single-tube semiconductor laser diode densely arranged beam shaping coupling device also includes: a reflective two-dimensional beam arrangement system, which is arranged before the focusing system and is configured to make a two-dimensional arrangement of multiple fifth beam arrays, and can also make a two-dimensional arrangement of multiple fifth beam arrays after polarization beam combining.

[0071] In some embodiments, the single-tube semiconductor laser diode densely arranged beam shaping coupling device also includes: a polarization beam combining system, which is arranged between the collimation system and the focusing system and is configured to perform polarization beam combining on two second beam arrays or two third beam arrays or two fourth beam arrays or two fifth beam arrays or two two-dimensional arrangement arrays that have not been polarization combined.

[0072] The polarization beam combiner can also be arranged between the first lens 2 and the second lens 3, and the two light beam arrays emitted from the two first lenses 2 are polarized and then injected into the second lens 3. The polarization beam combiner can also be arranged between the third lens 4 and the fourth lens 5, and the two light beam arrays emitted from the two third lenses 4 are polarized and then injected into the fourth lens 5.

[0073] According to the polarization combining principle of laser, after the semiconductor array laser beam passes through the collimation system and before passing through the focusing system, two such beam arrays can be polarized combined based on the polarization combining system to combine the two beams into one beam. After combining, the energy density of the system can be improved and the application field of the system can be broadened.

[0074] It should be understood that the two fifth beam arrays are obtained by using two sets of semiconductor array lasers A, collimation system B, beam reduction system C, fast-slow axis conversion system D, and beam expansion system E. The two fourth beam arrays are obtained by using two sets of semiconductor array lasers A, collimation system B, beam reduction system C, and fast-slow axis conversion system D, and so on.

[0075] It should be understood that the beam shaping coupling device provided by the present invention is based on the joint action of the collimation system, the beam reduction system, the fast-slow axis conversion system, the beam expansion system, and the focusing system to achieve beam shaping. Regardless of whether the fast and slow axes are collimated simultaneously or separately, the distance between the collimation system and the semiconductor array laser can be increased and a suitable focusing angle and focal size can be achieved through the joint action of the beam reduction system, the fast-slow axis conversion system, the beam expansion system, and the focusing system. If there is no beam reduction system to increase the distance between the collimation system and the semiconductor array laser, the light spot in the fast axis direction will be enlarged. In the absence of beam reduction, the fast-slow axis conversion system can be used to increase the distance between the collimation system and the semiconductor array laser. When the light beams are aligned, they will either interfere with each other or fail to achieve synthesis of small light spots. If there is no beam reduction system, fast-slow axis conversion system, or beam expansion system to increase the distance between the collimation system and the semiconductor array laser, in such densely arranged small-volume lasers, in order to ensure that the light spots do not interfere with each other, the collimation system can only increase the focal length in the slow axis direction during slow axis collimation. When focusing, the focus of the focused slow axis light spot will be too large, or the focusing angle will be too large. If used for direct processing, the processing is relatively rough, resulting in limited application scenarios. If coupling into optical fiber is required, only large-diameter optical fiber can be used, which greatly reduces the application field of the beam shaping coupling device.

[0076] In summary, the densely arranged beam shaping coupling device of a single-tube semiconductor laser diode provided in the embodiment of the utility model solves the heat dissipation problem, and solves the problem of the bar bar optical power attenuation or even failure caused by the exposed power-on lighting of the bar bar without suitable protective gas and a good dust-free environment, and the problem of easy damage to the chip during the debugging process, thereby achieving a simultaneous reduction in the size of the focused light spot and the focusing angle.

[0077] The above is only a specific embodiment of the utility model, but the protection scope of the utility model is not limited to this. Any changes or substitutions made within the spirit and principle of the utility model should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A single-tube semiconductor laser diode densely arranged beam shaping coupling device, characterized in that: include: a semiconductor array laser configured to emit a first array of light beams; A collimation system, arranged on an optical path of the semiconductor array laser light beam, configured to collimate the fast axis and the slow axis of the first light beam array to obtain a second light beam array, wherein the light beams of the second light beam array are arranged along the slow axis direction; A beam reduction system, arranged on the optical path of the light beam emitted by the collimation system, configured to reduce the light spot of the second light beam array in the fast axis direction and keep the light spot in the slow axis direction unchanged, so as to obtain a third light beam array; A fast-slow axis conversion system is arranged on the optical path of the light beam emitted by the beam reduction system, and is configured to rotate the fast-slow axis of the third light beam array by 90 degrees to obtain a fourth light beam array; A beam expansion system is disposed on an optical path of the light beam of the fast-slow axis conversion system, and is configured to expand the light spot of the fourth light beam array in the slow axis direction and keep the light spot in the fast axis direction unchanged, so as to obtain a fifth light beam array; The focusing system is arranged on the optical path of the light beam emitted by the beam expansion system and is configured to focus the light spot of the fifth light beam array to a target size.

2. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1 is characterized in that: The semiconductor array laser comprises: at least two semiconductor laser diode single chips arranged along the slow axis direction, the semiconductor laser diode single chips being configured to emit a laser beam; A reflector, disposed on an optical path of the semiconductor laser diode single chip light beam, configured to change the direction of the laser beam to obtain the first light beam array; The at least two semiconductor laser diode single chips and the reflector are packaged to obtain the semiconductor array laser.

3. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1 is characterized in that: The collimation system comprises: one of a spherical mirror lens array and an aspherical mirror lens array, and is configured to simultaneously collimate the fast axis and the slow axis of the first light beam array.

4. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1 is characterized in that: The collimation system is configured to collimate the fast axis and the slow axis of the first beam array respectively; Among them, during fast axis collimation, the collimation system adopts one of an aspherical cylindrical mirror, a cylindrical mirror, a cylindrical mirror array, and an aspherical cylindrical mirror array; during slow axis collimation, the collimation system adopts one of multiple aspherical mirrors, multiple cylindrical mirrors, a cylindrical mirror array, and an aspherical cylindrical mirror array.

5. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1, characterized in that: The attenuation system comprises: A first lens is configured to converge the light spot in the fast axis direction of the second light beam array; The second lens is configured to shape the light spot in the fast axis direction into quasi-parallel light to obtain a third light beam array.

6. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 5, characterized in that: The first lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group; The second lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group. The focal length of the first lens is greater than the focal length of the second lens.

7. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1, characterized in that: The fast-slow axis conversion system includes one of a cylindrical mirror pair, an aspherical mirror pair, a step reflector, and a micro-prism stack. The cylindrical mirror pair and the aspherical mirror pair are tilted 45 degrees relative to the fast axis or the slow axis direction.

8. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1, characterized in that: The beam expansion system comprises: A third lens is configured to converge or diffuse the light spot in the slow axis direction of the fourth light beam array; The fourth lens is configured to shape the converged or diffused light spot in the slow axis direction into quasi-parallel light, amplify the light spot in the slow axis direction, and keep the light spot in the fast axis direction unchanged, thereby obtaining the fifth light beam array.

9. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 8, characterized in that: The third lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group; The fourth lens includes one of a cylindrical lens, a cylindrical microlens array, an aspherical cylindrical lens, a cylindrical lens group, a lens group of a cylindrical lens and an aspherical lens, and an aspherical lens group; The focal length of the third lens is smaller than the focal length of the fourth lens.

10. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1, characterized in that: The focusing system includes one of a single spherical mirror, an aspherical mirror, multiple spherical mirrors, a combined lens of aspherical mirrors, and a group of multiple cylindrical mirrors.

11. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1, characterized in that: Also includes: A beam reflection separation system and a beam reflection combining system, wherein the beam reflection separation system is arranged between the collimating lens and the beam reduction system, or between the beam reduction system and the fast-slow axis conversion system, and is configured to separate and arrange the second beam array or the third beam array, increase the distance between the beams in the second beam array or the third beam array, and improve the pointing consistency of each beam; The beam reflection and combining system is arranged between the fast-slow axis conversion system and the beam expansion system, or between the beam expansion system and the focusing lens, and is configured to arrange the fourth beam array or the fifth beam array closely, reduce the spacing between the beams, and improve the consistency of the pointing directions of the beams.

12. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 1 or 11, characterized in that: Also includes: The beam reflection and arrangement system is arranged between the collimation system and the beam reduction system, and is configured to rearrange the beams in the second beam array to improve the consistency of the beam pointing.

13. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 12, characterized in that: Also includes: The reflective two-dimensional beam arrangement system is arranged before the focusing system and is configured to arrange the plurality of fifth beam arrays in two dimensions, or to arrange the plurality of polarization-combined fifth beam arrays in two dimensions.

14. The single-tube semiconductor laser diode densely arranged beam shaping coupling device according to claim 13, characterized in that: Also includes: The polarization beam combining system is arranged between the collimation system and the focusing system, and is configured to perform polarization beam combining on the two second beam arrays or the two third beam arrays or the two fourth beam arrays or the two fifth beam arrays or two two-dimensional arrays that are not polarization-combined.

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