Electrode and semiconductor device

Abstract

The utility model relates to an electrode and a semiconductor device. The electrode comprises an electrode main body, and the top end of the electrode main body comprises a heat conduction layer and a magnetic material layer clamped in the heat conduction layer; the lamp filament is positioned in the electrode main body, is positioned below the magnetic material layer and is connected with an alternating current power supply; the lamp filament is in a bent shape. The heat conduction layer and the magnetic material layer clamped in the heat conduction layer are arranged in the electrode, the magnetic material layer and the lamp filament connected with the alternating current are utilized to generate electromagnetic induction so as to generate heat, then the heat is transmitted to the electrode through the heat conduction layer, and therefore the electrode can be heated under the condition that too large electric power is not needed; the purpose of prolonging the service life of the filament in the electrode is achieved, the filament replacement frequency is reduced, manpower and financial resources are saved, and the ion implantation efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an electrode and a semiconductor device. Background Art

[0002] Ion implantation has been widely used in industries such as integrated circuits, light-emitting diodes, and solar cells. The ion implantation process can selectively dope ions into specific areas of a workpiece under specific conditions. During the ion implantation process, the material will first be dissociated into plasma in the ion source of the ion implanter, and then the ions will be continuously extracted to form an ion beam. The ion beam will be filtered, accelerated, decelerated, adjusted in direction, and adjusted in cross-sectional profile, and finally introduced into the specific area of ​​the workpiece to be doped.

[0003] In the semiconductor wafer manufacturing process, the ion implanter is the most commonly used instrument. The filament in the cathode of the ion implanter is used to continuously heat the cathode to generate hot electrons. During use, the filament in the cathode will burn out in about 2 to 3 weeks, resulting in the interruption of the ion implantation process, and it is necessary to switch to other machines to make up for the ion implantation; moreover, after the filament burns out, the ion implantation process must be stopped to clean the entire source and replace the filament. In order to prevent the filament in the ion implanter from burning out and causing the interruption of the ion implantation process, the ion implanter needs to be maintained regularly (for example, every two weeks) to replace the filament. However, the above operation requires personnel to frequently replace the filament regularly, which will lead to a large waste of manpower and financial resources, and make the ion implantation efficiency low. Summary of the invention

[0004] The purpose of the present application is to provide an electrode and a semiconductor device, which is beneficial to prolong the service life of the cathode filament in an ion implanter, reduce the frequency of filament replacement, save manpower and financial resources, and improve ion implantation efficiency.

[0005] To achieve the purpose of this application, this application provides the following technical solutions:

[0006] In a first aspect, the present application provides an electrode, comprising:

[0007] An electrode body, the top of which comprises a heat-conducting layer and a magnetic material layer sandwiched in the heat-conducting layer;

[0008] The filament is located in the electrode body and below the magnetic material layer. The filament is connected to an AC power source. The filament is bent.

[0009] The electrode of the present application is provided with a heat-conducting layer and a magnetic material layer sandwiched in the heat-conducting layer, and uses the magnetic material layer and a filament connected to alternating current to generate electromagnetic induction to generate heat, and then transfers the heat to the electrode through the heat-conducting layer, so that the electrode can be heated without requiring excessive electric power, thereby achieving the purpose of extending the life of the filament in the electrode, reducing the frequency of filament replacement, saving manpower and financial resources, and improving ion implantation efficiency.

[0010] In one embodiment, the cross section of the filament relative to the electrode body is spiral, meandering or irregularly bent.

[0011] In one embodiment, the melting point of the heat conductive layer is greater than the melting point of the magnetic material layer.

[0012] In one of the embodiments, the filament is spaced apart from the heat conducting layer.

[0013] In one of the embodiments, the material of the magnetic material layer includes cobalt, iron or nickel.

[0014] In one embodiment, the heat conductive layer includes a metal layer, and the metal layer includes a tungsten layer.

[0015] In a second aspect, the present application also provides a semiconductor device, which includes the electrode described in any one of the above embodiments.

[0016] In the semiconductor device of the present application, a heat-conducting layer and a magnetic material layer sandwiched in the heat-conducting layer are arranged in the electrode of the semiconductor device, and electromagnetic induction is generated by the magnetic material layer and a filament connected to alternating current to generate heat, and then the heat is transferred to the electrode through the heat-conducting layer, so that the electrode can be heated without excessive electric power, thereby achieving the purpose of extending the life of the filament in the electrode, reducing the frequency of filament replacement, saving manpower and financial resources, and improving ion implantation efficiency.

[0017] In one embodiment, the semiconductor device comprises an ion distribution machine, and the semiconductor device comprises:

[0018] The chamber comprises a cavity and a receiving cavity in the cavity; the electrode is a cathode, and the electrode is located at the bottom of the receiving cavity; the cathode generates thermal electrons when heated;

[0019] An air inlet, located in the cavity and communicated with the accommodating cavity;

[0020] A gas supply system, including a gas supply pipeline, connected to the gas inlet, for providing process gas into the containing chamber, wherein the process gas collides with the thermal electrons to generate ions;

[0021] a slit, located in the cavity, with one end communicating with the accommodating cavity and the other end extending to the outside of the cavity;

[0022] The extraction electrode is located at the slit and is used to extract the ions from the containing cavity through the slit to form an ion beam.

[0023] In one embodiment, the semiconductor device further includes:

[0024] A reflector is located in the accommodating cavity and at the top of the accommodating cavity.

[0025] In one embodiment, the semiconductor device further includes:

[0026] The ion beam shaping device is located on the transmission path of the ion beam.

[0027] In summary, the present application provides an electrode and a semiconductor device, in which a heat-conducting layer and a magnetic material layer sandwiched in the heat-conducting layer are arranged in the electrode. The unexpected effect is: electromagnetic induction is generated by the magnetic material layer and the filament connected to alternating current to generate heat, and then the heat is transferred to the electrode through the heat-conducting layer, so that the electrode can be heated without excessive electric power, thereby achieving the purpose of extending the life of the filament in the electrode, reducing the frequency of filament replacement, saving manpower and financial resources, and improving ion implantation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0029] Figure 1 is a schematic diagram of a three-dimensional structure of an electrode provided in an embodiment of the present application;

[0030] Figure 2 is a schematic diagram of a partial three-dimensional structure of an electrode provided in an embodiment of the present application;

[0031] Figures 3 to 5 is a schematic diagram of the structure of the filament in different examples provided in an embodiment of the present application;

[0032] Figure 6 It is a schematic diagram of the cross-sectional structure of a semiconductor device provided in another embodiment of the present application.

[0033] Description of Reference Numerals

[0034] 10. Electrode; 101. Electrode body; 1011. Heat conductive layer; 1012. Magnetic material layer; 102. Filament; 20. AC power supply; 30. Chamber; 301. Cavity; 302. Accommodating chamber; 40. Air inlet; 50. Air supply line; 60. Slit; 70. Lead-out electrode; 80. Reflector. DETAILED DESCRIPTION

[0035] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0037] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0038] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0039] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0040] Embodiments of the invention are described herein with reference to cross-sectional views which are schematic diagrams of ideal embodiments (and intermediate structures) of the invention, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shape of the region of the device, and do not limit the scope of the invention.

[0041] Ion implantation has been widely used in industries such as integrated circuits, light-emitting diodes, and solar cells. The ion implantation process can selectively dope ions into specific areas of a workpiece under specific conditions. During the ion implantation process, the material will first be dissociated into plasma in the ion source of the ion implanter, and then the ions will be continuously extracted to form an ion beam. The ion beam will be filtered, accelerated, decelerated, adjusted in direction, and adjusted in cross-sectional profile, and finally introduced into the specific area of ​​the workpiece to be doped.

[0042] In the semiconductor wafer manufacturing process, the ion implanter is the most commonly used instrument. The filament in the cathode of the ion implanter is used to continuously heat the cathode to generate hot electrons. During use, the filament in the cathode will burn out in about 2 to 3 weeks, resulting in the interruption of the ion implantation process, and it is necessary to switch to other machines to make up for the ion implantation; moreover, after the filament burns out, the ion implantation process must be stopped to clean the entire source and replace the filament. In order to prevent the filament in the ion implanter from burning out and causing the interruption of the ion implantation process, the ion implanter needs to be maintained regularly (for example, every two weeks) to replace the filament. However, the above operation requires personnel to frequently replace the filament regularly, which will lead to a large waste of manpower and financial resources, and make the ion implantation efficiency low.

[0043] See also Figure 1 and Figure 2 , the embodiment of the present application provides an electrode 10, and the electrode 10 may include:

[0044] The electrode body 101, the top of the electrode body 101 includes a heat-conducting layer 1011 and a magnetic material layer 1012 sandwiched in the heat-conducting layer 1011;

[0045] The filament 102 is located in the electrode body 101 and below the heat-conducting layer 1011 . The filament 102 is connected to the AC power source 20 . The filament 102 is bent.

[0046] In the embodiment of the present application, a heat-conducting layer 1011 and a magnetic material layer 1012 sandwiched in the heat-conducting layer 1011 are provided, and electromagnetic induction is generated by the magnetic material layer 1012 and the filament 102 connected to alternating current to generate heat, and then the heat is transferred to the electrode 10 through the heat-conducting layer 1011, so that the electrode 10 can be heated without requiring excessive electric power, thereby achieving the purpose of extending the life of the filament 102 in the electrode, reducing the frequency of replacing the filament 102, saving manpower and financial resources, and improving the efficiency of ion implantation.

[0047] In some embodiments, see Figure 3 , the melting point of the heat-conducting layer 1011 may be greater than the melting point of the magnetic material layer 1012. Specifically, the heat-conducting layer 1011 can transfer heat to the electrode 10 while protecting the magnetic material 1012 sandwiched in the heat-conducting layer 1011 to prevent the magnetic material layer 1012, which has a melting point lower than that of the heat-conducting layer 1011, from melting or oxidation.

[0048] As an example, the top of the electrode body 101 includes a heat-conducting layer 1011 and a magnetic material layer 1012 sandwiched in the heat-conducting layer 1011. The heat-conducting layer 1011 may include, but is not limited to, a metal layer with high thermal conductivity and high melting point, such as a metal tungsten (W) layer. Metal tungsten has a high melting point and high oxidation resistance. The melting point of tungsten can reach 3410°C. At the same time, tungsten has excellent thermal conductivity, so it is an ideal choice for making the heat-conducting layer 1011.

[0049] As an example, the material of the magnetic material layer 1012 may include cobalt (Co), iron (Fe) or nickel (Ni), that is, the magnetic material layer 1012 may include but is not limited to an iron layer, a cobalt layer or a nickel layer; specifically, in this embodiment, the magnetic material layer 1012 is a cobalt layer.

[0050] As an example, see Figure 2 , the filament 102 is located in the electrode body 101 and below the heat-conducting layer 1011, and the filament 102 is connected to the AC power supply 20; the filament 102 is bent. For example, the filament 102 may include but is not limited to molybdenum (Mo) wire, tungsten (W) wire, aluminum (Al) wire, titanium (Ti) wire or rhenium (Re) wire, etc.; specifically, in this embodiment, the filament 102 is a molybdenum wire. The melting point of molybdenum wire is extremely high and can withstand a high temperature of 1600°C. At the same time, the conductivity of molybdenum wire is high, and the conductivity can reach 1.9×107S / m, thereby greatly reducing the resistance of the filament 102. Molybdenum wire also has good corrosion resistance, and the expansion coefficient of molybdenum wire is less than 5×10-6, which can effectively extend the service life of the filament 102.

[0051] As an example, the filament 102 can be connected to an AC power source 20 , and the AC power generated thereby can produce electromagnetic induction on the magnetic material layer 1012 . Rapid switching of the frequency of the AC power passed into the filament 102 can rapidly heat the magnetic material layer 1012 , thereby achieving the purpose of heating the electrode 10 .

[0052] In some embodiments, see Figure 3~Figure 5 The filament 102 may be bent. For example, the cross section of the filament 102 relative to the electrode body 101 may be spiral. Figure 3 The cross section of the filament 102 relative to the electrode body 101 may also be serpentine, such as Figure 4 The cross section of the filament 102 relative to the electrode body 101 may also be irregularly bent, such as Figure 5 As shown, etc. For example, the thickness, winding shape and winding density of the filament 102 can be determined according to the heating area, heating shape or heating speed of the electrode 10 in actual conditions. Specifically, in this embodiment, the cross section of the filament 102 relative to the electrode body 101 is as follows: Figure 3 The spiral shape shown.

[0053] In some embodiments, please refer to Figure 3 , there is a distance between the filament 102 and the heat conducting layer 1011. For example, the distance between the filament 102 and the heat conducting layer 1011 can be determined according to actual conditions, while ensuring that the filament 102 can generate electromagnetic induction with the magnetic material layer 1012 and reducing heat loss to the filament 102.

[0054] See also Figures 1 to 6 The present application also provides a semiconductor device, which may include the above-mentioned Figures 1 to 5 The electrode 10 in the corresponding embodiment.

[0055] The semiconductor device implemented in the present application, by setting a heat-conducting layer 1011 and a magnetic material layer 1012 sandwiched in the heat-conducting layer 1011 in the electrode 10 in the semiconductor device, using the magnetic material layer 1012 and the filament 102 connected to alternating current to generate electromagnetic induction to generate heat, and then transferring the heat to the electrode 10 through the heat-conducting layer 1011, so that the electrode 10 can be heated without excessive electric power, thereby achieving the purpose of extending the life of the filament 102 in the electrode, reducing the frequency of replacing the filament 102, saving manpower and financial resources, and improving ion implantation efficiency.

[0056] In some embodiments, the semiconductor device may include an ion implanter. Figure 6 , the semiconductor device may include: a chamber 30, the chamber 30 may include a cavity 301 and a receiving cavity 302 located in the cavity 301. In this embodiment, the electrode 10 is a cathode, the electrode 10 is located at the bottom of the receiving cavity 302, and the cathode is heated to generate thermal electrons (not shown); an air inlet 40, the air inlet 40 is located in the cavity 301 and is connected to the receiving cavity 302; a gas supply system (not shown), the gas supply system may include a gas supply pipeline 50, connected to the air inlet 40, for providing process gas (not shown) into the receiving cavity 302, and the process gas collides with the thermal electrons to generate ions (not shown); a slit 60, the slit 60 is located in the cavity 301, one end of the slit 60 is connected to the receiving cavity 302, and the other end extends to the outside of the cavity 301; an extraction electrode 70, the extraction electrode 70 is located at the slit 60, and is used to extract ions from the receiving cavity 302 through the slit 60 to form an ion beam (not shown).

[0057] As an example, the spatial shape and size of the chamber 30 may depend on actual conditions. The chamber 30 may be made of, but not limited to, high-melting-point metal materials or alloy materials; for example, tungsten, molybdenum, or alloy materials containing tungsten or molybdenum. The chamber 30 includes a cavity 301 and a receiving cavity 302 located in the cavity 301. The spatial shape and size of the cavity 301 and the receiving cavity 302 may depend on actual conditions. The electrode 10 is the cathode 104 in this embodiment. The electrode 10 is located at the bottom of the receiving cavity 302. Specifically, in this embodiment, the filament 102 is connected to alternating current to generate electromagnetic induction with the magnetic material layer 1012. By changing the frequency of the alternating current, the magnetic material layer 1012 can generate heat, and then the heat conductive layer 1011 transfers the heat to the cathode, so that the cathode is heated to generate thermal electrons.

[0058] As an example, the air inlet 40 is located in the cavity 301 and communicates with the accommodating cavity 302. The shape and size of the air inlet 40 may be determined according to actual conditions. Specifically, in this embodiment, the shape of the air inlet 40 may be circular.

[0059] As an example, the gas supply system may include a gas supply line 50, which is connected to the gas inlet 40 and is used to provide process gas to the accommodating chamber 302. The process gas may include, but is not limited to, one or more of boron (B), carbon (C), phosphorus (P), arsenic (As), silicon (Si), hydrogen (H) and fluorine (F) gas compounds that can be ionized. Specifically, in the present embodiment, the process gas is boron trifluoride (BF3). Due to the high electron density in the chamber 30, the decomposition rate of boron trifluoride (BF3) is greater than that of other compounds, which is more conducive to the collision of the process gas with the thermal electrons to generate ions.

[0060] As an example, the slit 60 is located in the cavity 301, one end of which is connected to the accommodating cavity 302, and the other end of which extends to the outside of the cavity 301. The shape and size of the slit 60 may be determined according to actual conditions; specifically, in this embodiment, the shape of the slit 60 is circular.

[0061] As an example, the extraction electrode 70 is located at the slit 60, and is used to extract ions from the containing cavity 302 through the slit 60 to form an ion beam. The direction and position of the extraction electrode 70 to guide the ion beam depends on actual conditions.

[0062] In some embodiments, the semiconductor device may further include a reflector 80, which is located in the accommodating cavity 302 and at the top of the accommodating cavity 302. The reflector 80 may be made of, but not limited to, molybdenum metal. The reflector 80 may ensure that the hot electrons generated by the cathode fully collide with the process gas, thereby improving the efficiency of ionization of the process gas.

[0063] In some embodiments, the semiconductor device may further include an ion beam shaping device (not shown), which is located on the transmission path of the ion beam; the ion beam shaping device may adjust the shape of the ion beam on the transmission path.

[0064] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0065] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. An electrode, characterized in that: include: An electrode body, the top of which comprises a heat-conducting layer and a magnetic material layer sandwiched in the heat-conducting layer; The filament is located in the electrode body and below the magnetic material layer. The filament is connected to an AC power source. The filament is bent.

2. The electrode according to claim 1, characterized in that The melting point of the heat conductive layer is greater than the melting point of the magnetic material layer.

3. The electrode according to claim 1, characterized in that The filament is spaced apart from the heat conducting layer.

4. The electrode according to claim 1, characterized in that The material of the magnetic material layer includes cobalt, iron or nickel.

5. The electrode according to claim 1, characterized in that The heat conducting layer includes a metal layer, and the metal layer includes a tungsten layer.

6. A semiconductor device, characterized in that: include: The electrode according to any one of claims 1 to 5.

7. The semiconductor device according to claim 6, characterized in that The semiconductor device comprises an ion distribution machine, and the semiconductor device comprises: The chamber comprises a cavity and a receiving cavity in the cavity; the electrode is a cathode, and the electrode is located at the bottom of the receiving cavity; the cathode generates thermal electrons when heated; An air inlet, located in the cavity and communicated with the accommodating cavity; A gas supply system, including a gas supply pipeline, connected to the gas inlet, for providing process gas into the containing chamber, wherein the process gas collides with the thermal electrons to generate ions; a slit, located in the cavity, with one end communicating with the accommodating cavity and the other end extending to the outside of the cavity; The extraction electrode is located at the slit and is used to extract the ions from the containing cavity through the slit to form an ion beam.

8. The semiconductor device according to claim 7, wherein: The semiconductor device further comprises: A reflector is located in the accommodating cavity and at the top of the accommodating cavity.

9. The semiconductor device according to any one of claims 6 to 8, characterized in that The semiconductor device further comprises: The ion beam shaping device is located on the transmission path of the ion beam.

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