Chip-level light-emitting diode packaging piece with 180-degree light-emitting angle

Abstract

The utility model discloses a chip-level light-emitting diode packaging piece with a 180-degree light-emitting angle. The chip-level light-emitting diode packaging piece comprises an LED chip, the fluorescent film covers the top surface of the LED chip; the first reflecting layer is arranged on the periphery of the LED chip in a surrounding manner, and an electrode of the LED chip is exposed out of the first reflecting layer; the light transmitting layer is arranged above the fluorescent film and the first reflecting layer; and the light shielding layer is arranged above the light transmitting layer. According to the utility model, the light-emitting angle of the chip can be increased, the number of particles used by the backlight application LED can be reduced, the cost can be reduced, the fluorescent film can be protected, and the high color gamut of the device can be realized.

Description

Technical Field

[0001] The utility model relates to the technical field of LED packaging, in particular to a chip-level light emitting diode package with a light output angle of 180 degrees. Background Art

[0002] Light emitting diodes (LEDs) are semiconductor lighting devices that have many advantages over conventional lighting devices. For example, LEDs have a longer service life, are compact, consume less power, and are free of mercury pollution. Therefore, LEDs are frequently used as new lighting devices and backlight products instead of conventional lighting devices.

[0003] Among the existing packaging structures of light-emitting diodes, some packaging structures directly set a reflective layer on the side of the chip, such as Chinese patent CN202110965678.3, patent name: New micro-LED packaging structure and packaging method thereof. This packaging structure can only realize single-sided light emission of the chip, and the light emission angle is about 110~120°. When applied to backlight display devices, if the uniformity of module light emission is achieved, the spacing between LEDs will inevitably be reduced, which increases the cost of the device. In addition, the light conversion layer is exposed to the air, so the moisture-sensitive KSF phosphor cannot be used, and only conventional non-fluoride phosphors can be used, resulting in the inability to achieve a high color gamut of the device. Utility Model Content

[0004] The purpose of the utility model is to provide a chip-level light-emitting diode package with a 180° light-emitting angle, which can increase the light-emitting angle of the chip, reduce the number of LED particles used in backlight applications, reduce costs, protect the fluorescent film, and achieve a high color gamut of the device.

[0005] To achieve the above object, the technical solution adopted by the utility model is: a chip-level light-emitting diode package with a light output angle of 180°, comprising:

[0006] The LED chip has a top surface, a bottom surface arranged opposite to the top surface, and a side surface connecting the top surface and the bottom surface;

[0007] A fluorescent film covering the top surface of the LED chip;

[0008] A first reflective layer is at least disposed around the sides of the LED chip and exposes at least a portion of the electrode of the LED chip;

[0009] A light-transmitting layer, arranged above the fluorescent film;

[0010] and a light shielding layer, disposed above the light-transmitting layer;

[0011] The main light emitting surfaces of the light emitting diode package are the top surface and the side surface.

[0012] A further improvement of the present invention is that the bottom surface of the light-transmitting layer at least covers the top surface of the fluorescent film, the top surface and / or the side surface of the first reflective layer, and the bottom surface of the light-shielding layer covers the top surface of the light-transmitting layer.

[0013] A further improvement of the present invention is that the width of the fluorescent film is not less than the width of the LED chip, the first reflective layer covers the sides and part of the bottom of the LED chip and the sides of the fluorescent film, and the top surface of the first reflective layer is flush with the top surface of the fluorescent film.

[0014] A further improvement of the utility model is that the width of the fluorescent film is 20-50um greater than the width of the LED chip, and the distance from the edge of the fluorescent film to the outside of the first reflective layer is greater than 50um, and the first reflective layer covers the sides and part of the bottom of the fluorescent film. The width of the fluorescent film is greater than the width of the LED chip because it is difficult to be flush with the cutting path requirements, and the distance from the outside of the first reflective layer is greater than 50um to protect the KSF fluorescent powder.

[0015] A further improvement of the utility model is that the width of the fluorescent film is greater than the width of the LED chip, the top surface of the first reflective layer is flush with the top surface of the LED chip, the fluorescent film covers the top surface of the LED chip and the top surface of the first reflective layer; the light-transmitting layer at least wraps the entire top surface and side surfaces of the fluorescent film.

[0016] A further improvement of the present invention is that it further comprises a second reflective layer, which is arranged on the bottom surface of the light-transmitting layer and surrounds the first reflective layer.

[0017] A further improvement of the present invention is that the width of the fluorescent film is greater than the width of the LED chip, the fluorescent film covers the top surface of the LED chip and wraps part of the side surface of the LED chip, the light-transmitting layer wraps the entire top surface and side surface of the fluorescent film, and the top surface of the first reflective layer is flush with the bottom surface of the light-transmitting layer and the bottom of the side surface of the fluorescent film.

[0018] A further improvement of the present invention is that the side surface of the first reflective layer is flush with the side surface of the fluorescent film, the side surface of the first reflective layer is surrounded by a second reflective layer, and the side surface of the second reflective layer is flush with the side surface of the light-transmitting layer.

[0019] A further improvement of the utility model is that the light-shielding layer is made of transparent silica gel, and the transparent silica gel is doped with reflective particles.

[0020] A further improvement of the present invention is that the reflective particles are TiO2 and / or SiO2.

[0021] A further improvement of the present invention is that the vertical distance between the top surface of the fluorescent film and the bottom surface of the light shielding layer is D1, 1000um>D1>100um.

[0022] The further improvement of the utility model is that 500um>D1>300um. The thickness D1 of the transparent silicone is designed according to the overall height of the device and the light type, and the light output efficiency of the product. If D1 is too small, the light is easy to be reflected back and forth between the light shielding layer and the fluorescent film, causing light loss. If D1 is too large, it will affect the height of the entire device and is not suitable for application.

[0023] A further improvement of the present invention is that the thickness of the second reflective layer is H1, the thickness of the fluorescent film is H4, the height of the LED chip is H2, and H2+H4≥H1≥0.

[0024] A further improvement of the utility model is that the thickness of the light shielding layer is H3, 1000um>H3>10um. The thickness H3 of the light shielding layer is designed according to the overall height of the device and the light type requirements. By adjusting the thickness of the light shielding layer and the doping concentration, an "M"-shaped luminous morphology can be achieved, the central light intensity can be reduced, and the visual effect can be improved; by changing the thickness of the light shielding layer and the solubility of the doped particles, the relative intensity of the central light intensity can be changed, thereby adapting to the requirements of different application end designs and achieving the effect of good visual effects.

[0025] A further improvement of the present invention is that the distance between the outer wall of the light-transmitting layer and the outer wall of the first reflective layer is D2, and D2>50um. If D2 is too thin, the protection effect of the fluorescent film side wall will be poor, and moisture will easily penetrate and cause KSF failure.

[0026] A further improvement of the present invention is that a bowl-cup structure is provided between the first reflective layer and the LED chip, and the bowl-cup structure covers the side walls around the LED chip.

[0027] The beneficial effects of the utility model are:

[0028] The utility model arranges a light-transmitting layer and a light-shielding layer on the fluorescent film, so that the LED chip emits more light from the side, which can increase the light-emitting angle of the chip and realize the "five"-sided light emission of the packaging structure. The light-shielding layer mainly plays the role of reflecting and blocking the transmission of the front light. The intensity of the side light is higher than that of the front light, and the light-emitting angle is large, which can effectively reduce the number of LED particles used in backlight applications and reduce costs.

[0029] The existing LED has the problem that the brightness of the front area is higher than that of the side area, resulting in the presence of visual "bright spots". The utility model adjusts the light type of the package by adjusting the thickness and position of the light-transmitting layer and the light-shielding layer, the concentration of reflective particles in the light-shielding layer, etc., so that the light intensity of the package gradually increases and then decreases from the central area to the surrounding area, thereby eliminating the visual "bright spots".

[0030] Compared with the prior art that exposes the fluorescent film, the utility model completely wraps the fluorescent powder inside the package by setting a light-transmitting layer, which can effectively isolate water vapor and achieve high reliability, and then use the KSF fluorescent powder film that is easily affected by moisture to achieve a high color gamut. The high color gamut is achieved by exciting the KSF fluorescent powder film. Without using the QD film, the high color gamut of the backlight product (NTSC>85%) is achieved.

[0031] In the utility model, the reflection efficiency of the side light of the LED chip is improved by the bowl-cup structure, the light emitted from the side of the LED chip is effectively utilized, the light output rate of the LED chip is improved, and the light output angle is further improved.

[0032] The utility model arranges a reflective layer made of high-reflective white glue at the bottom of the LED chip, which can improve the brightness.

[0033] In the utility model, the KSF fluorescent film is above the LED chip, and is mainly used for the LED to excite the required white light; and is wrapped between the high-reflective white glue and the light-transmitting layer, so as to protect the KSF fluorescent powder and prevent the product from failing due to moisture.

[0034] In the utility model, a high-reflective white glue layer can be arranged around the entire structure, wrapping the KSF fluorescent film / transparent silicone anti-color cavity / LED chip and LED electrode gap, and the top surface is flush with the top surface of the KSF fluorescent film, mainly playing a structural support role and reflecting the LED side light, protecting the side of the KSF fluorescent film.

[0035] In the utility model, the light-transmitting layer is above the fluorescent film and the first reflecting layer, and plays the role of transmitting light and protecting the KSF fluorescent film. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 This is a schematic structural diagram of Example 1 of the utility model.

[0037] Figure 2 This is a structural schematic diagram of a modified implementation of Example 1 of the utility model;

[0038] Figure 3 This is a structural schematic diagram of another variant implementation of Example 1 of the utility model;

[0039] Figure 4 This is a schematic diagram of the structure of Example 2 of the present utility model;

[0040] Figure 5 This is a schematic diagram of the structure of Embodiment 3 of the present utility model;

[0041] Figure 6 This is a schematic diagram of the structure of Embodiment 4 of the present utility model;

[0042] Figure 7 This is a schematic diagram of the structure of Example 5 of the present utility model;

[0043] Figure 8 This is a schematic diagram of the structure of Example 6 of the present utility model;

[0044] Fig. 9 This is a light distribution curve diagram of Example 1 of the utility model;

[0045] Fig.10 This is a light distribution curve diagram of Example 2 of the utility model;

[0046] Fig.11 This is a light distribution curve diagram of Example 3 of the present utility model.

[0047] In the figure, 1-fluorescent film, 2-LED chip, 3-first reflective layer, 4-electrode, 5-light-transmitting layer, 6-light-shielding layer, 7-second reflective layer, 8-bowl-cup structure. DETAILED DESCRIPTION

[0048] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present disclosure more clearly understood, the present disclosure is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure and are not used to limit the present disclosure.

[0049] It should be noted that when a component is referred to as being "fixed on" or "disposed on" another component, it may be directly or indirectly located on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The orientation or position indicated by the terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inside", "outside", "side", etc. is based on the orientation or position shown in the accompanying drawings and is only for the convenience of description and cannot be understood as a limitation on the present technical solution. The terms "first" and "second" are only used for the convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0050] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Example

[0051] Combination Figure 1 , 2 , 3, and 9 show that a chip-level light-emitting diode package with a light output angle of 180° comprises: an LED chip 2, a fluorescent film 1, a first reflective layer 3, a light-transmitting layer 5, and a light-shielding layer 6. The LED chip 2 has a top surface, a bottom surface arranged opposite to the top surface, a side surface connecting the top surface and the bottom surface, and at least two electrodes with different polarities arranged on the bottom surface of the LED chip 2;

[0052] The LED chip 2 has a top surface, a bottom surface arranged opposite to the top surface, and a side surface connecting the top surface and the bottom surface;

[0053] A fluorescent film 1 covering the top surface of the LED chip 2;

[0054] The first reflective layer 3 is at least arranged around the sides of the LED chip 2 and exposes at least a portion of the electrode 4 of the LED chip 2;

[0055] A light-transmitting layer 5 is arranged above the fluorescent film 1;

[0056] and a light shielding layer 6, disposed above the light-transmitting layer 5;

[0057] The main light emitting surfaces of the light emitting diode package of this embodiment are the top surface and the side surface.

[0058] Specifically, the LED chip 2 includes a substrate, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer arranged in sequence from top to bottom, and the electrode 4 includes a first electrode arranged on the lower end surface of the second semiconductor layer and electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first electrode and the second electrode are opposite, that is, if the first electrode is a P-type electrode, the second electrode is an N-type electrode; if the first electrode is an N-type electrode, the second electrode is a P-type electrode, and the number of the first electrode and the second electrode can be one or more according to design requirements.

[0059] In this embodiment, the first electrode and the second electrode are composed of multiple layers of metal, including a Ti layer, a Cu layer, a Ni layer, and an Au layer in sequence from the end close to the LED chip to the end farthest from the LED chip, or a Cr layer, a Cu layer, a Ni layer, and an Au layer in sequence; wherein the Ti layer or the Cr layer serves as an adhesion layer with a thickness of 100Å~5000Å; the Cu layer has excellent electrical and thermal conductivity, and as the main component of the first electrode and the second electrode, its thickness is 1μm~100μm, preferably 30μm~60μm; the Au layer serves as the outermost metal layer, and its thickness is 200Å~5000Å, preferably 650Å~950Å; the Ni layer is arranged between the Cu layer and the Au layer, and its thickness is 1μm~10μm, preferably 2μm~4μm.

[0060] The bottom surface of the light-transmitting layer 5 at least covers the top surface of the fluorescent film 1 , the top surface and / or the side surface of the first reflective layer 3 , and the bottom surface of the light-shielding layer 6 covers the top surface of the light-transmitting layer 5 .

[0061] The width of the fluorescent film 1 is not less than the width of the LED chip 2 , the first reflective layer 3 covers the sides and part of the bottom of the LED chip 2 and the sides of the fluorescent film 1 , and the top surface of the first reflective layer 3 is flush with the top surface of the fluorescent film 1 .

[0062] Preferably, the width of the fluorescent film 1 is 20-50 um greater than the width of the LED chip 2 , and the distance from the edge of the fluorescent film 1 to the outside of the first reflective layer 3 is greater than 50 um, and the first reflective layer 3 covers the sides and part of the bottom of the fluorescent film 1 .

[0063] The fluorescent film 1 can be formed by first mixing a dopant with a colloid to form a precursor, and then formed by a film forming process. The dopant is a phosphor, including one or more of KSF powder, nitride phosphor, silicate phosphor, chlorate phosphor, YAG phosphor, and sulfide phosphor. The light emitted by the LED chip can be blue, green or red. The light emitted by the LED chip is converted in wavelength after passing through the fluorescent film to emit light of another color. In this embodiment, since the required LED package is white light, but the light emitted by the LED chip 2 is blue light, the required fluorescent film needs to convert the blue light into white light.

[0064] Furthermore, the distance between the top surface of the fluorescent film 1 and the bottom surface of the light shielding layer 6 is D1, 1000um>D1>100um. Preferably, 500um>D1>300um. The smaller D1 is, the easier it is to achieve large-angle light emission. However, if D1 is too small, light is easily reflected back and forth between the light shielding layer 6 and the fluorescent film 1, and the brightness is small after light loss. If D1 is too large, it will affect the height of the entire device and is not suitable for application.

[0065] The light shielding layer 6 is made of transparent silica gel, and the transparent silica gel is doped with reflective particles. The reflective particles can be TiO 2 or SiO 2 The reflective particles can also be TiO 2 and SiO 2 Co-doping, when the reflective particles are TiO 2 and SiO 2 When TiO 2 The mass fraction of SiO is 10-50%, preferably 20-30%, 2 The mass fraction of is 0~150%, preferably 30%~60%.

[0066] The light-transmitting layer 5 can be pure transparent silica gel, or fluorescent glue doped with fluorescent powder. The distance between the outer wall of the light-transmitting layer 5 and the outer wall of the first reflective layer 3 is D2, preferably 300um>D2>50um. If D2 is too thin, the protection effect of the side wall of the fluorescent film 1 will be poor, and moisture will easily penetrate and cause the KSF fluorescent powder to fail. If D2 is too thick, the side light intensity will be reduced. And the size is too large and not suitable for application. The light-transmitting layer 5 can be pure transparent silica gel or fluorescent glue doped with fluorescent powder.

[0067] The bottom surface of the first reflective layer 3 is flush with the bottom surface of the electrode 4 and exposes the lower surface of the electrode 4. The first reflective layer 3 is an insulating reflective layer. In addition to reflecting the lateral light emitted by the LED chip, it also protects the chip. In this embodiment, the reflectivity of the first reflective layer 3 is greater than 90%, and the material is transparent silica gel doped with reflective particles, that is, high-reflective white glue. The reflective particles can be insulating particles, such as TiO2, SiO2, SiN, etc., or metal particles, such as Al particles, Ag particles, Cu particles, etc. In another embodiment, the first reflective layer can also be a DBR reflective layer.

[0068] In this embodiment, the light intensity value in the central area of ​​the package is the lowest. The light intensity of the package gradually increases from the central area to the periphery and then decreases. The light intensity value in the central area can be adjusted by adjusting the thickness and doping concentration of the light shielding layer 6. Preferably, the ratio of the central light intensity to the maximum light intensity is 50% to 80%.

[0069] Fig. 9 The light distribution curve diagram of the package of the present embodiment is shown. The package provided by the present embodiment realizes light emission from the top surface and the surrounding sides of the package, namely "five-sided light emission", through the setting of the first reflective layer, the shading layer and the light-transmitting layer. At the same time, by adjusting the thickness of the shading layer and the doping concentration of the reflective particles, the light intensity in the central area of ​​the package is reduced, so that the light type of the package of the present embodiment gradually increases and then decreases from the central area to the surrounding area. At the same time, the light-emitting angle reaches 180°, and the strongest light intensity is distributed near ±80°, avoiding the appearance of "two points" in the center.

[0070] The preparation method of this embodiment is as follows:

[0071] S1: providing a fluorescent film 1;

[0072] S2: placing a plurality of LED chips 2 with their top surfaces facing downwards on the fluorescent film 1 at intervals;

[0073] S3: cutting to form a single chip with a fluorescent film;

[0074] S4: placing the chips in step S3 with their fluorescent film ends facing downwards on a temporary substrate;

[0075] S5: Then, a first reflective layer 3 is provided, wherein the first reflective layer 3 is a highly reflective white glue;

[0076] S6: removing the redundant first reflective layer 3 on the bottom surface of the LED chip 2 to expose the electrode 4;

[0077] S7: placing the chip electrode end of step S6 on a temporary substrate with the electrode end facing downward;

[0078] S8: sequentially arrange a light-transmitting layer 5 and a light-shielding layer 6;

[0079] S9: removing the temporary substrate and cutting to form a plurality of packages.

[0080] See also Figure 2 In a modified implementation of Example 1, compared with Example 1, the structures of the first reflective layer 3 and the light-transmitting layer 5 are changed, such as Figure 2 As shown, the top surface of the first reflective layer 3 is flush with the top surface of the LED chip 2, and the light-transmitting layer 5 is disposed on the fluorescent film 1 and the first reflective layer 3, and covers the top surface and surrounding sides of the fluorescent film 1. The bottom surface of the light-transmitting layer 5 is connected to the top surface of the first reflective layer 3.

[0081] In terms of preparation method, compared with Example 1, the preparation processes of the fluorescent film 1 and the first reflective layer 3 are different. The sides of the fluorescent film 1 are not surrounded by the first reflective layer 3, which reduces the reflection of the side light of the fluorescent film 1 and allows the light to be directly emitted through the light-transmitting layer 5.

[0082] See also Figure 3 In a modified implementation of Example 1, compared with Example 1, the structures of the fluorescent film 1, the first reflective layer 3 and the light-transmitting layer 5 are changed, such as Figure 3 As shown, the first reflective layer 3 covers the four sides and bottom of the LED chip 2, exposing the top surface of the LED chip 2 and the lower surface of the electrode. The edge of the fluorescent film 1 can be flush with the edge of the first reflective layer 3, or slightly larger.

[0083] The width of the fluorescent film 1 is greater than the width of the LED chip 2, the top surface of the first reflective layer 3 is flush with the top surface of the LED chip 2, and the fluorescent film 1 covers the top surface of the LED chip 2 and the top surface of the first reflective layer 3. The light-transmitting layer 5 at least wraps the entire top surface of the fluorescent film 1 and its side surfaces.

[0084] Preferably, the light-transmitting layer 5 covers the top surface of the fluorescent film 1 and the four sides of the first reflective layer 3 , and the bottom surface of the light-transmitting layer 5 , the bottom surface of the first reflective layer 3 , and the lower surface of the electrode are flush.

[0085] This design partially increases the thickness of the light-transmitting layer 5 while keeping the distance D1 between the top surface of the fluorescent film 1 and the bottom surface of the light-shielding layer 6 unchanged, so that the thickness of the edge of the light-transmitting layer 5 is equal to the height H2 of the chip 2 plus the thickness H4 of the fluorescent film 1 plus the distance D1 between the top surface of the fluorescent film 1 and the bottom surface of the light-shielding layer 6. The increase in the thickness of the edge of the light-transmitting layer 5 increases the light-emitting area on the side of the device. Example

[0086] The structure of the light emitting diode package provided in this embodiment is as follows Figure 4 As shown, the width of the fluorescent film 1 is greater than the width of the LED chip 2, the top surface of the first reflective layer 3 is flush with the top surface of the LED chip 2, and the fluorescent film 1 covers the top surface of the LED chip 2 and the top surface of the first reflective layer 3; the light-transmitting layer 5 wraps the entire top surface of the fluorescent film 1 and its side walls.

[0087] Preferably, the present embodiment further includes a second reflective layer 7, the light-transmitting layer 5 wraps part of the side wall of the first reflective layer 3, and the second reflective layer 7 is arranged on the bottom surface of the light-transmitting layer 5 and surrounds the first reflective layer 3. The lower surface of the second reflective layer 7, the bottom surface of the first reflective layer 3, and the lower surface of the electrode 4 are flush.

[0088] The thickness of the second reflective layer 7 is H1, the thickness of the fluorescent film 1 is H4, the height of the LED chip 2 is H2, H2+H4>H1≥0, H1<D1. The thickness of the light shielding layer 6 is H3, 1000um>H3>10um, preferably 200~400um. In this embodiment, the reflectivity of the second reflective layer 7 is greater than 90%, and the material is transparent silica gel doped with reflective particles, that is, high-reflective white glue. The reflective particles can be insulating particles, such as TiO2, SiO2, SiN, etc., or metal particles, such as Al particles, Ag particles, Cu particles, etc.

[0089] The upper surface of the second reflective layer and the side wall of the first reflective layer have a function of re-reflecting the light reflected downward from the light shielding layer, and together form three-side reflective surfaces to emit the light toward the side surface of the light-transmitting layer.

[0090] See also Fig.10 Specifically, when the thickness H3 of the light shielding layer is 400um, the minimum thickness D1 of the light-transmitting layer is 350um, and the concentration of reflective particles in the light shielding layer is 30%, see the attached Fig.10 From the light pattern diagram, it can be seen that the light distribution curve of the package shown in the figure shows that the light output angle is 180°, the light intensity in the center area is the lowest, and the light intensity gradually increases and then decreases from the midline area to the surrounding areas. The strongest light intensity of the package is near the light output angle of ±85°, and the light intensity at ±90° is greater than the light intensity at the center.

[0091] The preparation method of this embodiment is as follows:

[0092] S1: providing a fluorescent film 1;

[0093] S2: placing a plurality of LED chips 2 with their top surfaces facing downwards on the fluorescent film 1 at intervals;

[0094] S3: Then, a first reflective layer 3 is provided, wherein the first reflective layer 3 is a highly reflective white glue;

[0095] S4: removing the redundant first reflective layer 3 on the bottom surface of the LED chip 2 to expose the electrode 4;

[0096] S5: cutting to form a single chip with a fluorescent film and a first reflective layer;

[0097] S6: The chip electrodes of step S5 are arranged with their ends facing downwards and spaced apart on the temporary substrate, and a second reflective layer is arranged at the spaced apart positions;

[0098] S7: sequentially arrange a light-transmitting layer 5 and a light-shielding layer 6;

[0099] S8: removing the temporary substrate and cutting to form a plurality of packages.

[0100] The second reflective layer in step S6 can be formed by evaporation or dot coating. Compared with embodiment 1, this embodiment improves the first reflective layer 3 and the light-transmitting layer 5, increases the volume of the light-transmitting layer 5, increases the range of light refraction, and enhances the light extraction effect. Example

[0101] Combination Figure 5 It can be seen that the structure of the light-emitting diode package provided in this embodiment is roughly the same as that of the package provided in Implementation Example 2, except that the fluorescent film 1 covers the top surface of the LED chip 2, and the areas of the two are close or the area of ​​the fluorescent film 1 is slightly larger than the top surface area of ​​the LED chip 2, and the first reflective layer 3 covers the sides of the LED chip 2 and the fluorescent film 1, as well as the bottom surface of the LED chip 2. The thickness H1 of the second reflective layer 7 is less than the chip height H2.

[0102] See also Fig.11 When the thickness of the light-shielding layer H3 is 100um, the minimum thickness of the light-transmitting layer D1 is 350um, and the concentration of reflective particles in the light-shielding layer is 30%, see the attached Fig.11 As shown in the light distribution curve of the package, it can be seen from the light pattern diagram of the package that the light output angle is still 180°, and the light intensity gradually increases and then decreases from the midline area to the surrounding areas, but the light intensity in the central area is increased compared with Example 2, and the central area is not the lowest light intensity point, and the lowest light intensity point is approximately at ±90°.

[0103] The preparation method of this embodiment is as follows:

[0104] S1: providing a fluorescent film 1;

[0105] S2: Dispose the top surfaces of a plurality of LED chips 2 at intervals on the fluorescent film 1;

[0106] S3: Setting a first reflective layer 3;

[0107] S4: remove the excess highly reflective white glue on the bottom surface of the LED chip 2 to expose the electrode 4;

[0108] S5: cutting to form a single chip with a fluorescent film and a first reflective layer;

[0109] S6: The chip electrodes of step S5 are arranged with their ends facing downwards and spaced apart on the temporary substrate, and a second reflective layer is arranged at the spaced apart positions;

[0110] S7: sequentially arrange a light-transmitting layer 5 and a light-shielding layer 6;

[0111] S8: removing the temporary substrate and cutting to form a plurality of packages.

[0112] In step S6, the second reflective layer can be formed by evaporation or dot coating.

[0113] Apart from this, this embodiment is exactly the same as Embodiment 2 and will not be described in detail here. Example

[0114] The light emitting diode package provided in this embodiment is as follows Figure 6 As shown, the package structure is roughly the same as that provided in Implementation Example 2, with the difference that: the width of the fluorescent film 1 is greater than the width of the LED chip 2, the fluorescent film 1 covers the top surface of the LED chip 2 and wraps part of the side surface of the LED chip 2, the light-transmitting layer 5 wraps the entire top surface and side surface of the fluorescent film 1, and the top surface of the first reflective layer 3 is flush with the bottom surface of the light-transmitting layer 5 and the bottom of the side surface of the fluorescent film 1.

[0115] The side surface of the first reflective layer 3 is flush with the side surface of the fluorescent film 1 . The side surface of the first reflective layer 3 is surrounded by a second reflective layer 7 . The side surface of the second reflective layer 7 is flush with the side surface of the light-transmitting layer 5 .

[0116] Optionally, the bottom surface of the light-transmitting layer 5 is flush with the bottom surface of the side surface of the fluorescent film 1 .

[0117] Optionally, the bottom surface of the light-transmitting layer 5 is not flush with the bottom of the side surface of the fluorescent film 1 .

[0118] The thickness of the second reflective layer 7 is H1, which is the same as the thickness of the first reflective layer, or the first reflective layer and the second reflective layer are integrally formed. Both are highly reflective white glue with a reflectivity greater than 98%. Furthermore, the thickness of the first reflective layer needs to be greater than the thickness of the electrode, that is, the first reflective layer and / or the second reflective layer must cover the side wall and bottom surface of the electrode.

[0119] The preparation method of this embodiment is as follows:

[0120] S1: Dispose the top surfaces of a plurality of LED chips 2 at intervals on a substrate;

[0121] S2: Setting a fluorescent film on the side of LED chip 2;

[0122] S3: Setting a first reflective layer 3;

[0123] S4: remove the excess highly reflective white glue on the bottom surface of the LED chip 2 to expose the electrode 4;

[0124] S5: Setting the fluorescent film on the top surface;

[0125] S6: removing the temporary substrate, cutting, and forming a plurality of packages;

[0126] S7: Disposing the packages in S6 at intervals on a temporary substrate;

[0127] S8: sequentially arrange a second reflective layer 7, a light-transmitting layer 5 and a light-shielding layer 6;

[0128] S9: removing the temporary substrate and cutting it to form a plurality of packages.

[0129] Apart from this, this embodiment is exactly the same as Embodiment 2 and will not be described in detail here. Example

[0130] Figure 7 A package is provided that has a substantially similar structure to the package provided in Embodiment 1, except that a bowl-cup structure 8 is provided between the first reflective layer 3 and the LED chip 2, and the bowl-cup structure 8 covers part of the surrounding sides of the LED chip 2. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0131] Compared with Example 1, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle.

[0132] The preparation method of this embodiment is as follows:

[0133] S1: providing a fluorescent film 1;

[0134] S2: placing a plurality of LED chips 2 with their top surfaces facing downwards on the fluorescent film 1 at intervals;

[0135] S3: Setting the bowl and cup structure 8;

[0136] S4: cutting to form a single chip with a fluorescent film;

[0137] S5: The chips in step S4 are arranged with the fluorescent film ends facing downwards on a temporary substrate at intervals;

[0138] S6: Then, a first reflective layer 3 is provided, wherein the first reflective layer 3 is a highly reflective white glue;

[0139] S7: removing the redundant first reflective layer 3 on the bottom surface of the LED chip 2 to expose the electrode 4;

[0140] S8: placing the chip electrode end of step S7 on a temporary substrate with the electrode end facing downward;

[0141] S9: sequentially arrange a light-transmitting layer 5 and a light-shielding layer 6;

[0142] S10: removing the temporary substrate and cutting to form a plurality of packages.

[0143] Apart from this, this embodiment is completely the same as Embodiment 1 and will not be described in detail here. Example

[0144] Figure 8 A package is provided that has a substantially similar structure to the package provided in Embodiment 2, except that a bowl-cup structure 8 is provided between the first reflective layer 3 and the LED chip 2, and the bowl-cup structure 8 covers the side walls of the LED chip 2. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0145] The preparation method of this embodiment is as follows:

[0146] S1: providing a fluorescent film 1;

[0147] S2: placing a plurality of LED chips 2 with their top surfaces facing downwards on the fluorescent film 1 at intervals;

[0148] S3: Setting the bowl and cup structure 8;

[0149] S4: Then, a first reflective layer 3 is provided, wherein the first reflective layer 3 is a highly reflective white glue;

[0150] S5: removing the redundant first reflective layer 3 on the bottom surface of the LED chip 2 to expose the electrode 4;

[0151] S6: cutting to form a single chip with a fluorescent film and a first reflective layer;

[0152] S7: The chip electrodes of step S5 are arranged with their ends facing downwards and spaced apart on the temporary substrate, and a second reflective layer is arranged at the spaced apart positions;

[0153] S8: sequentially arrange a light-transmitting layer 5 and a light-shielding layer 6;

[0154] S9: remove the temporary substrate, cut and form a number of packages.

[0155] Apart from this, this embodiment is exactly the same as Embodiment 2 and will not be described in detail here.

[0156] Compared with Example 2, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle.

[0157] In the description of the present utility model, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present utility model. Any equivalent structure or equivalent process transformation made using the contents of the utility model specification and the accompanying drawings, or directly or indirectly used in other related technical fields, are similarly included in the patent protection scope of the present utility model.

Claims

1. A chip-level light-emitting diode package with a light output angle of 180°, characterized in that: include: The LED chip (2) has a top surface, a bottom surface arranged opposite to the top surface, and a side surface connecting the top surface and the bottom surface; A fluorescent film (1) covering the top surface of the LED chip (2); A first reflective layer (3) is arranged at least around the sides of the LED chip (2) and exposes at least a portion of the electrode (4) of the LED chip (2); A light-transmitting layer (5) is arranged above the fluorescent film (1); and a light shielding layer (6), arranged above the light-transmitting layer (5); The main light emitting surfaces of the light emitting diode package are the top surface and the side surface.

2. The chip-level light emitting diode package with a light output angle of 180° according to claim 1, characterized in that: The bottom surface of the light-transmitting layer (5) at least covers the top surface of the fluorescent film (1), the top surface and / or the side surface of the first reflective layer (3), and the bottom surface of the light-shielding layer (6) covers the top surface of the light-transmitting layer (5).

3. The chip-level light emitting diode package with a light output angle of 180° according to claim 2, characterized in that: The width of the fluorescent film (1) is not less than the width of the LED chip (2); the first reflective layer (3) covers the sides and part of the bottom of the LED chip (2) and the sides of the fluorescent film (1); and the top surface of the first reflective layer (3) is flush with the top surface of the fluorescent film (1).

4. The chip-level light emitting diode package with a light output angle of 180° according to claim 3, characterized in that: The width of the fluorescent film (1) is 20-50 um greater than the width of the LED chip (2), and the distance from the edge of the fluorescent film (1) to the outside of the first reflective layer (3) is greater than 50 um, and the first reflective layer (3) covers the sides and part of the bottom of the fluorescent film (1).

5. The chip-level light emitting diode package with a light output angle of 180° according to claim 2, characterized in that: The width of the fluorescent film (1) is greater than the width of the LED chip (2); the top surface of the first reflective layer (3) is flush with the top surface of the LED chip (2); the fluorescent film (1) covers the top surface of the LED chip (2) and the top surface of the first reflective layer (3); and the light-transmitting layer (5) at least wraps around the entire top surface of the fluorescent film (1) and its side surfaces.

6. A chip-level light emitting diode package with a light output angle of 180° according to claim 1 or 5, characterized in that: It also comprises a second reflective layer (7), which is arranged on the bottom surface of the light-transmitting layer (5) and surrounds the first reflective layer (3).

7. The chip-level light emitting diode package with a light output angle of 180° according to claim 1, characterized in that: The width of the fluorescent film (1) is greater than the width of the LED chip (2); the fluorescent film (1) covers the top surface of the LED chip (2) and wraps part of the side surface of the LED chip (2); the light-transmitting layer (5) wraps the entire top surface and side surface of the fluorescent film (1); and the top surface of the first reflective layer (3) is flush with the bottom surface of the light-transmitting layer (5) and the bottom of the side surface of the fluorescent film (1).

8. The chip-level light emitting diode package with a light output angle of 180° according to claim 7, characterized in that: The side surface of the first reflective layer (3) is flush with the side surface of the fluorescent film (1), the side surface of the first reflective layer (3) is surrounded by a second reflective layer (7), and the side surface of the second reflective layer (7) is flush with the side surface of the light-transmitting layer (5).

9. A chip-level light emitting diode package with a light output angle of 180° according to any one of claims 1 to 8, characterized in that: The light-shielding layer (6) is made of transparent silica gel, and the transparent silica gel is doped with reflective particles.

10. The chip-level light emitting diode package with a light output angle of 180° according to claim 9, characterized in that: The reflective particles are TiO2 and / or SiO2.

11. The chip-level light emitting diode package with a light output angle of 180° according to claim 1, characterized in that: The vertical distance between the top surface of the fluorescent film (1) and the bottom surface of the light shielding layer (6) is D1, 1000um>D1>100um.

12. The chip-level light emitting diode package with a light output angle of 180° according to claim 11, characterized in that: 500um>D1>300um.

13. The chip-level light emitting diode package with a light output angle of 180° according to claim 6, characterized in that: The thickness of the second reflective layer (7) is H1, the thickness of the fluorescent film (1) is H4, the height of the LED chip (2) is H2, and H2+H4≥H1≥0.

14. The chip-level light emitting diode package with a light output angle of 180° according to claim 11, characterized in that: The thickness of the light shielding layer (6) is H3, 1000um>H3>10um.

15. The chip-level light emitting diode package with a light output angle of 180° according to claim 14, characterized in that: The distance between the outer wall of the light-transmitting layer (5) and the outer wall of the first reflective layer (3) is D2, and D2>50 um.

16. The chip-level light emitting diode package with a light output angle of 180° according to claim 1, characterized in that: A bowl-cup structure (8) is provided between the first reflective layer (3) and the LED chip (2), and the bowl-cup structure (8) covers the side walls around the LED chip (2).

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