Planar inorganic perovskite solar cell structure

Abstract

The utility model discloses a planar inorganic perovskite solar cell structure, which relates to the technical field of solar cells and comprises a substrate, and a front electrode layer, a hole transport layer, a hole modification layer, a perovskite absorption layer, an electron transport layer, a blocking buffer layer and a top electrode layer are sequentially covered on the substrate. The all-solid-state inorganic perovskite solar cell structure solves the technical problems that the preparation process of inorganic perovskite is complex, the cost is high and large-scale production is not facilitated, the photoelectric conversion efficiency of all-inorganic perovskite is relatively low, and the recombination rate is high mainly due to poor carrier transmission performance of the all-inorganic perovskite. Due to the fact that organic components are prevented from being used, better stability is achieved, and even if the coating is exposed in air or at high temperature for a long time, the performance of the coating is not remarkably reduced. In general, compared with the prior art, the preparation process is simplified, the cost is reduced, and large-scale production is facilitated.

Description

Technical Field

[0001] The utility model relates to the technical field of solar cells, in particular to a planar inorganic perovskite solar cell structure. Background Art

[0002] A solar cell is a device that converts solar energy directly into electrical energy. Its core component is a photosensitive material that can absorb sunlight and generate electron-hole pairs.

[0003] Currently, organic-inorganic hybrid perovskite materials are widely used in solar cells due to their high light absorption coefficient, long carrier diffusion length and suitable energy band gap. However, traditional organic-inorganic hybrid perovskite solar cells usually contain organic components, which may affect their long-term stability and photoelectric conversion efficiency. To solve this problem, researchers began to explore the possibility of all-inorganic perovskite solar cells. All-inorganic perovskite refers to a perovskite structure composed of inorganic cations and anions, which has higher stability and better anti-degradation performance. However, the preparation process of all-inorganic perovskite is relatively complicated, and its photoelectric conversion efficiency is often lower than that of organic-inorganic hybrid perovskite.

[0004] Problems with existing technologies: Although some research has made some progress, there are still some problems with existing all-inorganic perovskite solar cells. First, the preparation process of all-inorganic perovskites is complicated and costly, which is not conducive to large-scale production. Secondly, the photoelectric conversion efficiency of all-inorganic perovskites is relatively low, which is mainly due to their poor carrier transport performance, resulting in a high recombination rate. In addition, the stability of all-inorganic perovskites needs to be improved. Their performance may be significantly reduced after long-term exposure to air or high temperature.

[0005] In summary, combined with the existing technology, all-inorganic perovskite solar cells still have the following problems:

[0006] 1) The preparation process of all-inorganic perovskite is complicated and costly;

[0007] 2) The problem of low photoelectric conversion efficiency of all-inorganic perovskite;

[0008] 3) Perovskite has poor stability and its performance may be significantly degraded if exposed to air or high temperature for a long time. Utility Model Content

[0009] In view of the deficiencies in the prior art, the utility model provides a planar inorganic perovskite solar cell structure, which solves the technical problems in the background technology.

[0010] To achieve the above objectives, the utility model is implemented through the following technical solutions: a planar inorganic perovskite solar cell structure, including a substrate, on which are sequentially covered a front electrode layer, a hole transport layer, a hole modification layer, a perovskite absorption layer, an electron transport layer, a blocking buffer layer and a top electrode layer.

[0011] Preferably, the substrate is made of glass, flexible ultra-thin glass, metal foil or plastic film or any other material that can be used as a perovskite cell substrate.

[0012] Preferably, the front electrode layer is an ITO film uniformly doped with Al2O3 particles, with a thickness ranging from 100 nanometers to 400 nanometers, and the percentage of the ITO doped with Al2O3 is (90%-99%): (1%-10%);

[0013] Preferably, the hole transport layer is a 10-90 nm thick NiO or MoO3 film doped with V, Co, Fe and Cu;

[0014] The hole modification layer is TiO2, ZnO or NiO X , and the thickness is 1-10nm.

[0015] Preferably, the perovskite absorption layer is a compound of Cs, Sn, Rb, K and Pb with I, Br and Cl of 400-600nm;

[0016] The electron transport layer is a TiO2 or ZnO film with a thickness of 30-200 nm.

[0017] Preferably, the blocking buffer layer is a SnO2 or In2O3 thin film with a thickness of 6-60 nm.

[0018] The top electrode layer is a transparent conductive film of SnO2 / Ag / SnO2 or In2O3 / Ag / In2O3 with a thickness of 70-150nm.

[0019] Preferably, the blocking buffer layer is a SnO2 or In2O3 thin film with a thickness of 6-60 nm.

[0020] The top electrode layer is a transparent conductive film of SnO2 / Ag / SnO2 or In2O3 / Ag / In2O3 with a thickness of 70-150nm.

[0021] The beneficial effects of the utility model are:

[0022] 1. A planar inorganic perovskite solar cell structure, which is easy to produce and simplifies the preparation process:

[0023] By realizing a fully inorganic perovskite cell in a multilayer structure, the use of organic components is avoided, thereby simplifying the preparation process, reducing costs, and facilitating large-scale production. 2. A planar inorganic perovskite solar cell structure,

[0024] 2. A planar inorganic perovskite solar cell structure to improve photoelectric conversion efficiency:

[0025] The all-solid-state inorganic perovskite solar cell structure of the utility model improves the carrier transmission performance and reduces the recombination rate through optimized design and doping structure, thereby improving the photoelectric conversion efficiency.

[0026] 3. A planar inorganic perovskite solar cell structure with enhanced stability:

[0027] The all-solid-state inorganic perovskite solar cell structure of the utility model has better stability because it avoids the use of organic components, and its performance will not be significantly reduced even if it is exposed to air or high temperature for a long time. In general, the utility model simplifies the preparation process and reduces the cost for large-scale production compared with the existing technology, and improves the photoelectric conversion efficiency and stability, and has high practical value and broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a hierarchical diagram of the battery structure of the utility model;

[0029] In the figure: 1. substrate; 2. front electrode layer; 3. hole transport layer; 4. hole modification layer; 5. perovskite absorption layer; 6. electron transport layer; 7. blocking buffer layer; 8. top electrode layer. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0031] See also Figure 1 , the utility model provides a technical solution: a planar inorganic perovskite solar cell structure:

[0032] Embodiment 1:

[0033] The invention comprises a substrate 1, on which a front electrode layer 2, a hole transport layer 3, a hole modification layer 4, a perovskite absorption layer 5, an electron transport layer 6, a blocking buffer layer 7 and a top electrode layer 8 are sequentially covered.

[0034] The substrate 1 is made of glass, flexible ultra-thin glass, polymer, metal foil or plastic film or any other material that can be used as a perovskite cell substrate.

[0035] The front electrode layer 2 is an ITO film uniformly doped with Al2O3 particles, with a thickness ranging from 100 nanometers to 400 nanometers, and the amount percentage of the ITO doped with Al2O3 is 90%-99%: 1%-10%;

[0036] The hole transport layer 3 is a 10-90 nm thick NiO or MoO3 film doped with V, Co, Fe and Cu;

[0037] The hole modification layer 4 is TiO2, ZnO or NiO X , and the thickness is 1-10nm.

[0038] The perovskite absorption layer 5 is a compound of Cs, Sn, Rb, K and Pb with I, Br and Cl of 400-600nm;

[0039] The electron transport layer 6 is a TiO2 or ZnO thin film with a thickness of 30-200 nm.

[0040] The blocking buffer layer 7 is a SnO2 or In2O3 thin film with a thickness of 6-60 nm.

[0041] The top electrode layer 8 is a transparent conductive film of SnO2 / Ag / SnO2 or In2O3 / Ag / In2O3 with a thickness of 70-150nm.

[0042] In this implementation, specifically:

[0043] Flexible glass is used as substrate 1, and the front electrode layer 2 is an ITO film of 180 μm uniformly doped with Al2O3, and the mass percentage of ITO doped with Al2O3 is 97.9%:2.1%, thereby effectively improving the light transmittance. The ITO film of the front electrode layer 2: Al2O3 has an average visible light transmittance of 89.3%, and a sheet resistance of 9.8 ohms;

[0044] The hole transport layer 3 is NiO with a thickness of 56 nm. x Doped V film;

[0045] The hole modification layer 4 is a TiO2 film with a thickness of 4 nm;

[0046] Perovskite absorber layer 5 is 490nm CsPbI 3-x Br x Doped Sn, CsPbI 3-x Br x The mass percentage of Sn is 98.4%:1.6%;

[0047] The electron transport layer 6 is a ZnO film with a thickness of 56 nm;

[0048] The blocking buffer layer 7 is SnO2 with a thickness of 19 nm;

[0049] The top electrode layer 8 is a SnO2 / Ag / SnO2 thin film with a thickness of 89 nm;

[0050] The obtained perovskite solar cell has an open circuit voltage V oc =60.03V, short circuit current I sc =2.101A, fill factor FF=59.74%, photoelectric conversion efficiency η is 10.28%;

[0051] Through the above-mentioned method, the preparation process of perovskite solar cells can be effectively simplified and the preparation efficiency can be improved, while the film uniformity and performance stability of perovskite solar cells can also be improved.

[0052] Embodiment 2:

[0053] Based on the first embodiment, the difference between this embodiment and the first embodiment is that:

[0054] The metal foil sheet is used as the substrate 1, and the front electrode layer 2 is a 220nm ITO film uniformly doped with Al2O3, and the mass percentage of ITO doped with Al2O3 is 95.3%:4.7%, which effectively improves the light transmittance. The average visible light transmittance of the front electrode layer 2 is 85.7%, and the square resistance is 9.1 ohms;

[0055] The hole transport layer 3 is a 68 nm thick MoO3 doped Fe film;

[0056] The hole modification layer 4 is NiO with a thickness of 6 nm. X film;

[0057] Perovskite absorber layer 5 is 550nm CsPbSnCl 3-x I x K-doped thin film;

[0058] The electron transport layer 6 is a TiO2 film with a thickness of 130 nm;

[0059] The blocking buffer layer 7 is a 5 nm thick In2O3 film;

[0060] The top electrode layer 8 is a 110 nm thick In2O3 / Ag / In2O3 thin film;

[0061] The obtained perovskite solar cell has an open circuit voltage V oc =59.61V, short-circuit current I sc=2.283A, fill factor FF=63.59%, photoelectric conversion efficiency η is 11.83%;

[0062] Implementation three:

[0063] The above-mentioned embodiment 1 and embodiment 2 are combined and implemented, and this embodiment also includes:

[0064] This embodiment is obtained by combining the first embodiment with the second embodiment. By optimizing the design and doping structure, the carrier transmission performance is improved, the recombination rate is reduced, and the photoelectric conversion efficiency is improved.

[0065] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A planar inorganic perovskite solar cell structure, comprising a substrate (1), characterized in that: The substrate (1) is sequentially covered with a front electrode layer (2), a hole transport layer (3), a hole modification layer (4), a perovskite absorption layer (5), an electron transport layer (6), a blocking buffer layer (7) and a top electrode layer (8).

2. A planar inorganic perovskite solar cell structure according to claim 1, characterized in that: The substrate (1) is made of glass, flexible ultra-thin glass, metal foil or plastic film.

3. A planar inorganic perovskite solar cell structure according to claim 1, characterized in that: The front electrode layer (2) has a thickness of 100 nanometers to 400 nanometers.

4. A planar inorganic perovskite solar cell structure according to claim 1, characterized in that: The hole modification layer (4) is TiO2, ZnO or NiO X , and the thickness is 1-10nm.

5. The planar inorganic perovskite solar cell structure according to claim 1, characterized in that: The electron transport layer (6) is a TiO2 or ZnO thin film with a thickness of 30-200 nm.

6. A planar inorganic perovskite solar cell structure according to claim 1, characterized in that: The blocking buffer layer (7) is a SnO2 or In2O3 thin film with a thickness of 6-60 nm; The top electrode layer (8) is a SnO2 / Ag / SnO2 or In2O3 / Ag / In2O3 transparent conductive film with a thickness of 70-150 nm.

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