Laser

Abstract

The embodiment of the utility model provides a laser, and relates to the technical field of laser. The laser comprises a light-emitting chip and a heat sink substrate, the main heat production position of the light-emitting chip is a first area where a light-emitting point is located, heat dissipation is conducted on the first area where the light-emitting point is located through a first heat conduction part with the high heat conductivity coefficient, and heat dissipation is conducted on a second area through a second heat conduction part with the low heat conductivity coefficient. Most heat generated by working of the light-emitting chip is conducted out through the first heat conduction part, so that the problems that the temperature of the first area is too high, although no light-emitting point (namely no heat source) exists in the second area, a small amount of heat of the first area is conducted to the second area, the heat dissipation efficiency is lower than that of the first area, and the temperature of the second area rises due to heat accumulation are solved; therefore, the temperature gradient between different areas of the whole light-emitting chip is reduced, the temperature distribution tends to be uniform, the influence of the thermal lens effect is weakened, and the slow-axis far-field divergence angle and the light beam quality are improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of laser technology, and more specifically, to a laser. Background Art

[0002] At present, the laser projection industry is developing very rapidly, and laser, as one of the key core components, plays an irreplaceable role.

[0003] In the related technology, laser packaging is to complete the eutectic between the light-emitting chip and the heat sink substrate through gold-tin solder, and the light-emitting chip dissipates heat through the heat sink substrate. When the light-emitting chip is powered on, the heat of the light-emitting point of the light-emitting chip flows from the center to both sides, and there is a temperature gradient, which leads to an uneven refractive index distribution of the waveguide layer material. The refractive index in the center area is high and the refractive index on both sides is low. When the light beam passes through the absorbing medium with an uneven refractive index distribution, the medium can be regarded as the lens of the light beam. This is the thermal lens effect. The thermal lens effect causes the far-field divergence angle of the laser slow axis to increase and the beam quality to deteriorate, which greatly limits the application of semiconductor lasers. Utility Model Content

[0004] An exemplary embodiment of the present application provides a laser for solving the problem of increased divergence angle and deteriorated beam quality caused by thermal lens effect.

[0005] This application provides the following technical solutions:

[0006] In a first aspect, an embodiment of the present application provides a laser, including:

[0007] A light-emitting chip, comprising a first area and a second area, wherein the second area is at least located on one side of the first area along a first direction, and the light-emitting chip comprises at least one light-emitting point, and the light-emitting point is located in the first area;

[0008] a heat sink substrate, located at one side of the light emitting chip along the second direction, the heat sink substrate including a first heat conducting portion and a second heat conducting portion on a side facing the light emitting chip, the first heat conducting portion overlapping the first area, the second heat conducting portion overlapping the second area, and the thermal conductivity of the second heat conducting portion being smaller than the thermal conductivity of the first heat conducting portion;

[0009] The first direction is perpendicular to the second direction.

[0010] It can be seen from the above technical solution that the laser provided by the present application includes: a light-emitting chip, including a first area and a second area, along the first direction, the second area is at least located on one side of the first area, the light-emitting chip includes at least one light-emitting point, and the light-emitting point is located in the first area; a heat sink substrate, located on one side of the light-emitting chip along the second direction, the side of the heat sink substrate facing the light-emitting chip includes a first heat-conducting part and a second heat-conducting part, along the second direction, the first heat-conducting part overlaps with the first area, the second heat-conducting part overlaps with the second area, and the thermal conductivity of the second heat-conducting part is less than the thermal conductivity of the first heat-conducting part; the first direction is perpendicular to the second direction. Therefore, the main heat generation position of the light-emitting chip is the first zone where the light-emitting point is located. The first heat-conducting part with a higher thermal conductivity is used to dissipate the heat in the first zone where the light-emitting point is located, and the second heat-conducting part with a lower thermal conductivity is used to dissipate the heat in the second zone. Most of the heat generated by the light-emitting chip is discharged through the first heat-conducting part to prevent the temperature of the first zone from being too high. Although there is no light-emitting point in the second zone (that is, no heat source), a small amount of heat from the first zone will be conducted to the second zone. Since its heat dissipation efficiency is inferior to that of the first zone, heat accumulation causes the temperature of the second zone to rise, thereby reducing the temperature gradient between different zones of the entire light-emitting chip and making the temperature distribution uniform, thereby reducing the influence of the thermal lens effect and improving the slow-axis far-field divergence angle and beam quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the implementation methods in the embodiments of the present application or the related technologies, the following is a brief introduction to the drawings required for use in the embodiments or the related technology descriptions. Obviously, the drawings described below are some embodiments of the present application, and a person skilled in the art can also obtain other drawings based on these drawings.

[0012] Figure 1 It is a schematic diagram of the structure of a laser in the related art;

[0013] Figure 2 It is a structural explosion diagram of a laser in the related art;

[0014] Figure 3 It is a structural schematic diagram of a light-emitting component in the related art;

[0015] Figure 4 It is a structural schematic diagram of a light-emitting chip in the related art;

[0016] Figure 5 A schematic diagram of the structure of a laser provided in an embodiment of the present application;

[0017] Figure 6 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0018] Figure 7 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0019] Figure 8 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0020] Fig. 9 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0021] Fig.10 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0022] Fig.11 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0023] Fig.12 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0024] Fig.13 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0025] Fig.14 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0026] Fig.15 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0027] Fig.16 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0028] Fig.17 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0029] Fig.18 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0030] Fig.19 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0031] Fig. 20 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0032] Fig.21 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0033] Fig. 22 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0034] Fig.23 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0035] Fig.24 for Fig.23 An exploded view of the laser is shown. DETAILED DESCRIPTION

[0036] In order to make the purpose and implementation method of the present application clearer, the exemplary implementation method of the present application will be clearly and completely described below in conjunction with the drawings in the exemplary embodiments of the present application. Obviously, the described exemplary embodiments are only part of the embodiments of the present application, rather than all the embodiments.

[0037] It should be noted that the brief description of terms in this application is only for the convenience of understanding the embodiments described below, and is not intended to limit the embodiments of this application. Unless otherwise specified, these terms should be understood according to their common and usual meanings.

[0038] The terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover but not exclude inclusion, for example, a product or device comprising a list of components is not necessarily limited to all the components expressly listed but may include other components not expressly listed or inherent to such product or device.

[0039] In related technologies, such as Figure 1-2 As shown, the multi-chip packaged laser includes a base 3, a tube shell 4, a cover plate 5, a collimating lens 6, a light-emitting component and a steering component 8, wherein the base 3 can be welded to the bottom plate of the tube shell 4 on the one hand, and a circuit board can be printed inside the base 3 on the other hand to realize the circuit interconnection function with the tube shell 4. The bottom plate of the tube shell 4 can be fixed to the base 3 by reflow soldering through a tin-silver-copper alloy. The welding method is not limited to reflow soldering, and can also be achieved by high-temperature pressure sintering of silver paste and copper paste. The material of the base 3 can be metal materials such as oxygen-free copper and diamond copper.

[0040] The side wall of the tube shell 4 can be formed of ceramic material or metal alloy material; the bottom plate of the tube shell 4 is the patch area of ​​the light-emitting component and the steering component 8. Considering the patch accuracy and heat dissipation effect, the flatness of the bottom plate of the tube shell 4 is required to be high, so oxygen-free copper, diamond copper and other materials with good heat dissipation are generally used. The bottom plate of the tube shell 4 and the side wall of the tube shell 4 are sintered to form the tube shell 4 as a whole. Both sides of the side wall of the tube shell 4 are stepped, and both sides of the steps need to be plated with metal film. The steps on both sides can realize the circuit conduction to the bottom plate of the tube shell 4, and finally interconnect with the base 3.

[0041] A light-emitting component and a steering component 8 are mounted inside the tube shell. The light-emitting component includes a light-emitting chip 1 and a heat sink substrate 2. The laser emitted by the light-emitting chip 1 turns the optical path 90 degrees through the steering component 8. The reflected laser is incident on the collimating lens 6 through the cover plate 5. The laser after collimation is emitted from the light-emitting surface.

[0042] For example, Figure 3 As shown, the light emitting chip 1 and the heat sink substrate 2 are stacked in the vertical direction, and the heat sink substrate 2 is used to conduct heat generated by the light emitting chip 1 when it is working, to achieve heat dissipation, and to prevent the light emitting chip 1 from affecting its light emitting performance due to excessive temperature. Figure 4 As shown, the light-emitting chip 1 includes a light-emitting point, which is located at the center of the light-emitting surface. The fast axis direction of the light-emitting chip 1 is parallel to the vertical direction, and the slow axis direction is parallel to the horizontal direction. The divergence angle of the laser emitted by the light-emitting chip in the fast axis direction is θ1, and the divergence angle in the slow axis direction is θ2. Usually θ1 is greater than θ2.

[0043] When the light-emitting chip 1 is powered on, the heat generated flows from the light-emitting point to both sides. There is a temperature gradient in the horizontal direction (i.e., the slow axis direction of the light-emitting chip 1). The refractive index of the waveguide layer material is affected by the temperature distribution of the light-emitting chip 1 when it is working, which leads to an uneven refractive index distribution of the waveguide layer material. The refractive index of the central light-emitting point is high, and the refractive index of the two sides is low. When the Gaussian light beam passes through an absorbing medium with an uneven refractive index distribution, the medium layer can be regarded as a lens of the light beam, that is, a thermal lens effect occurs, which is equivalent to inserting a convex lens into the waveguide layer. At this time, the aperture angle can be equivalent to the change in the divergence angle. In the vertical direction, the refractive index guidance mechanism is relatively strong, that is, the fast axis divergence angle and the beam quality change little and are relatively stable. However, in the parallel direction, the active area material has a weaker guidance mechanism for the refractive index and is easily affected by temperature changes. The slow axis divergence angle is greatly affected by the thermal lens effect due to the large temperature change, resulting in a deterioration of the beam quality.

[0044] In order to solve the above technical problems, an embodiment of the present application provides a laser, which includes: a light-emitting chip, including a first area and a second area, along the first direction, the second area is at least located on one side of the first area, the light-emitting chip includes at least one light-emitting point, and the light-emitting point is located in the first area; a heat sink substrate, located on one side of the light-emitting chip along the second direction, the side of the heat sink substrate facing the light-emitting chip includes a first heat-conducting part and a second heat-conducting part, along the second direction, the first heat-conducting part overlaps with the first area, the second heat-conducting part overlaps with the second area, and the thermal conductivity of the second heat-conducting part is less than the thermal conductivity of the first heat-conducting part; the first direction is perpendicular to the second direction. Therefore, the main heat generation position of the light-emitting chip is the first zone where the light-emitting point is located. The first heat-conducting part with a higher thermal conductivity is used to dissipate the heat in the first zone where the light-emitting point is located, and the second heat-conducting part with a lower thermal conductivity is used to dissipate the heat in the second zone. Most of the heat generated by the light-emitting chip is discharged through the first heat-conducting part to prevent the temperature of the first zone from being too high. Although there is no light-emitting point in the second zone (that is, no heat source), a small amount of heat from the first zone will be conducted to the second zone. Since its heat dissipation efficiency is inferior to that of the first zone, heat accumulation causes the temperature of the second zone to rise, thereby reducing the temperature gradient between different zones of the entire light-emitting chip and making the temperature distribution uniform, thereby reducing the influence of the thermal lens effect and improving the slow-axis far-field divergence angle and beam quality.

[0045] A laser provided in an embodiment of the present application is exemplarily described below in conjunction with the accompanying drawings.

[0046] In some embodiments, Figure 5 As shown in FIG6 , the laser includes: a light emitting chip 1 and a heat sink substrate 2 .

[0047] The light emitting chip 1 includes a first area A and a second area B. Along the first direction X, the second area B is at least located on one side of the first area A. For example, Figure 5-6 As shown, the second area B is located on both sides of the first area A.

[0048] The light emitting chip 1 includes at least one light emitting point 11 , and the light emitting point 11 is located in the first area A.

[0049] The embodiment of the present application does not limit the number of light-emitting points 11 in the light-emitting chip 1. For example, Figure 5 The light emitting chip 1 shown includes a light emitting point 11, which is located at the center of the light emitting chip. Figure 6 The light emitting chip 1 shown includes two light emitting points 11 . The light emitting point 11 is located in the middle area of ​​the light emitting chip 1 , but there is a distance between the two light emitting points 11 .

[0050] The heat generated by the light emitting chip 1 comes from the light emitting point 11, so the first area A is the main heat generating position. Although there is no light emitting point in the second area B, that is, there is no heat source in the second area B, part of the heat of the first area A will still be transferred to the second area B adjacent thereto.

[0051] Among them, along the second direction Z, the heat sink substrate 2 and the light emitting chip 1 are stacked, the heat sink substrate 2 is located on one side of the light emitting chip 1, and the first direction X is perpendicular to the second direction Z. The side of the heat sink substrate 2 facing the light emitting chip 1 includes a first heat conducting portion 21 and a second heat conducting portion 22. Along the second direction Z, the first heat conducting portion 21 overlaps with the first area A, and the second heat conducting portion 22 overlaps with the second area B. The thermal conductivity of the second heat conducting portion 22 is less than the thermal conductivity of the first heat conducting portion 21, that is, the heat dissipation efficiency of the first area A is better than the heat dissipation efficiency of the second area B. The first heat conducting portion with a higher thermal conductivity is used to dissipate the heat of the first area A, and most of the heat generated in the first area A is conducted away from the light emitting chip 1 through the first heat conducting portion 21 toward the heat sink substrate 2, thereby achieving effective heat dissipation of the first area A, preventing the temperature of the first area from being too high, and ensuring the light-emitting performance of the light emitting chip 1. A small amount of heat is conducted from the first area A to the second area B. Since the thermal conductivity of the second heat-conducting portion 22 is small, that is, the heat dissipation efficiency of the second area B is poor, the heat accumulation causes the temperature of the second area B to rise, thereby reducing the temperature gradient of the entire light-emitting chip 1 in the first direction X, and the temperature distribution tends to be uniform. The refractive index of the waveguide layer material also tends to be uniform, thereby reducing the influence of the thermal lens effect and improving the slow-axis far-field divergence angle and beam quality.

[0052] The second heat conducting part 22 may be a solid structure, and its thermal conductivity is smaller than that of the first heat conducting part 21. The second heat conducting part 22 may also be an air gap, and the thermal conductivity of the air gap is lower, much higher than that of the first heat conducting part 21.

[0053] It should be noted that Figure 5-6 The width direction (i.e., the slow axis direction) of the light emitting chip 1 is parallel to the first direction X, and the height direction (i.e., the fast axis direction) of the light emitting chip 1 is parallel to the second direction Z.

[0054] The embodiment of the present application does not limit the material and structure of the heat sink substrate 2. The heat sink substrate 2 can be a single-layer structure, and its material includes aluminum nitride or silicon carbide, or it can be a composite layer structure. For example, a metal layer is sputtered on the surface of aluminum nitride (or silicon carbide) to improve the thermal conductivity. At the same time, it can also serve as a conductive layer to be electrically connected to the electrode (such as the negative electrode or the positive electrode) of the light-emitting chip 1, and can also be connected to a power supply through a wire to achieve the purpose of supplying power to the light-emitting chip 1 through the metal layer.

[0055] The embodiment of the present application provides a laser, in which the main heat generating position of the light-emitting chip 1 is the first area A where the light-emitting point 11 is located. The first heat-conducting part 21 with a higher thermal conductivity is used to dissipate the heat of the first area A where the light-emitting point 11 is located, and the second heat-conducting part 22 with a lower thermal conductivity is used to dissipate the heat of the second area B. Most of the heat generated by the light-emitting chip 1 during operation is conducted through the first heat-conducting part 21 to prevent the temperature of the first area A from being too high. Although there is no light-emitting point 11 in the second area B (i.e., no heat source), a small amount of heat from the first area A will be conducted to the second area B. Since its heat dissipation efficiency is inferior to that of the first area A, heat accumulation causes the temperature of the second area B to rise, thereby reducing the temperature gradient between different areas of the entire light-emitting chip 1 and making the temperature distribution uniform, thereby reducing the influence of the thermal lens effect and improving the slow-axis far-field divergence angle and beam quality.

[0056] In some embodiments, Figure 5 As shown in FIG. 6 , the first heat conducting portion 21 contacts the first area A of the light emitting chip 1 ; the second heat conducting portion 22 includes a groove 221 , and the groove 221 is recessed in a direction away from the light emitting chip 1 .

[0057] In this embodiment, the first heat conducting portion 21 is in contact with the first area A of the light emitting chip 1, the second heat conducting portion 22 is a groove 221, the bottom of the groove 221 is not in contact with the second area B of the light emitting chip 1, and there is an air gap between the bottom of the groove and the light emitting chip 1. The thermal conductivity of the air gap is very low, about 0.024W / (m·K). The heat of the light emitting chip 1 is mainly concentrated in the first area A where the light emitting point 11 is located, and most of the heat flows to the bottom of the heat sink substrate 2 (i.e., the side away from the light emitting chip 1) through the first heat conducting portion 21 in contact with the first area A. An effective heat dissipation channel is formed in the second direction Z to prevent the temperature of the first area A from being too high; although there is no heat source in the second area B, the thermal conductivity of the air gap is very low, and no effective heat dissipation channel is formed in the second direction Z. The heat accumulated from the first area A to the second area B causes the temperature of the second area B to rise, thereby reducing the temperature gradient of the entire light-emitting chip 1 in the first direction X, showing the control of the slow-axis far-field thermal blooming phenomenon, and the temperature distribution tends to be uniform, thereby reducing the influence of the thermal lens effect and improving the slow-axis far-field divergence angle and beam quality.

[0058] In some embodiments, Figure 7 As shown in FIG8 , the second heat conducting portion 22 further includes: a compensating heat conducting structure 222 .

[0059] The compensation heat-conducting structure 222 is filled in the groove 221 ( Figure 7-8 In the embodiment (not shown), the compensating heat-conducting structure 222 contacts the second region B of the light-emitting chip 1 , and the thermal conductivity of the compensating heat-conducting structure 222 is smaller than the thermal conductivity of the first heat-conducting portion 21 .

[0060] When the laser is driven by a large current, as the current increases, the Joule heat, non-radiative recombination and other heat generated by the current passing through the various structural layers of the light-emitting chip 1 increase. In order to avoid the junction temperature of the light-emitting chip 1 from rising under the same heat dissipation conditions, the chip edge (or the second area B) needs to further conduct heat.

[0061] In this embodiment, the heat sink substrate 2 in contact with the light emitting chip 1 uses two materials with different thermal conductivity, that is, the first heat conducting part 21 in contact with the first area A has a larger thermal conductivity, and the compensating heat conducting structure 222 in contact with the second area B has a smaller thermal conductivity. For example, the first heat conducting part 21 is made of a metal material, and the compensating heat conducting structure 222 is made of a ceramic material, and the thermal conductivity of the metal material is greater than that of the ceramic material.

[0062] Exemplarily, the first heat conducting part 21 is made of copper with high thermal conductivity, and its thermal conductivity is 397W / (m·K); the compensating heat conducting structure 222 is made of aluminum nitride or silicon carbide, and its thermal conductivity is about 200W / (m·K) to 250W / (m·K).

[0063] The first area A of the light-emitting chip 1 generates more heat, and is in contact with the first heat-conducting part 21 with high thermal conductivity. The second area B is in contact with the compensating heat-conducting structure 222 with low thermal conductivity. Most of the heat flows to the bottom of the heat sink substrate 2 through the first heat-conducting part 21 for heat dissipation. The second area B has no heat source, but since the thermal conductivity of the compensating heat-conducting structure 222 is low, the heat accumulation causes the temperature of the second area B to rise, thereby reducing the temperature gradient of the entire light-emitting chip 1 in the first direction X, and the temperature distribution tends to be uniform, thereby reducing the influence of the thermal lens effect and improving the slow-axis far-field divergence angle and beam quality.

[0064] In some embodiments, Figure 5 As shown in FIG6 , along the second direction Z, the depth H1 of the groove 221 satisfies H1 ≥ 0.01 mm, and may also satisfy H1 ≤ 0.08 mm.

[0065] In this embodiment, the depth H1 of the groove 221 may satisfy: H1 ≥ 0.01 mm, may also satisfy: H1 ≤ 0.08 mm, or may satisfy: 0.01 mm ≤ H1 ≤ 0.08 mm.

[0066] In some embodiments, Figure 7 As shown in FIG8 , the compensation heat conductive structure 222 is filled in the groove 221 , and the compensation heat conductive structure 222 contacts the second area B of the light emitting chip 1 . Along the second direction Z, the thickness of the compensation heat conductive structure 222 is equal to the depth H1 of the groove 221 .

[0067] In some embodiments, Figure 5As shown in FIG6 , along the first direction X, the width W1 of the first heat conducting portion 21 satisfies W1 ≥ 100 μm, and may also satisfy W1 ≤ 250 μm.

[0068] In this embodiment, the width W1 of the first heat conducting portion 21 may satisfy: W1 ≥ 100 μm, or may satisfy: W1 ≤ 250 μm, or may satisfy: 100 μm ≤ W1 ≤ 250 μm.

[0069] In some embodiments, Figure 5 As shown in FIG. 6 , along the first direction X, the width W2 of the second heat conducting portion 22 satisfies: W2>0 μm, and may also satisfy W2≤50 μm.

[0070] In this embodiment, the width W2 of the second heat conducting portion 22 is greater than 0 μm, and may also satisfy: W2 ≤ 50 μm, or satisfy: 0 μm < W2 ≤ 50 μm.

[0071] For example, Figure 5 As shown, the light-emitting chip 1 includes a light-emitting point 11. Along the first direction X, the width of the light-emitting chip is 200mm, and the light-emitting point 11 is located at the center of the light-emitting chip 1. The light-emitting chip 1 includes a first area A and two second areas B. The two second areas B are symmetrically located on both sides of the first area A. The width of the first area A is 160mm, and the width of the second area B is 20mm. The width W1 of the first heat-conducting part in contact with the first area A is equal to the width of the first area A, that is, W1 is 160mm; the second heat-conducting part 22 in contact with the second area B is an air gap, and the width of the groove 221 is the width W2 of the second heat-conducting part 22, which is equal to the width of the second area B, that is, W2 is 20mm.

[0072] For example, Figure 6 As shown, the light-emitting chip 1 includes two light-emitting points 11. Along the first direction X, the width of the light-emitting chip is 500mm. The light-emitting point 11 is located in the middle area of ​​the light-emitting chip 1. The width of each light-emitting point is 75mm. The distance between the inner edges of the two light-emitting points 11 is 150mm. The distance between the outer edges of the two light-emitting points 11 and the edge of the light-emitting chip 1 is 100mm. The light-emitting chip 1 includes two first areas A and three second areas B. The first area A is located between the adjacent and separated second areas B. The width of the first area A is 160mm, and the width of the second area B is 30mm. The width W1 of the first heat-conducting part in contact with the first area A is equal to the width of the first area A, that is, W1 is 205mm; the second heat-conducting part 22 in contact with the second area B is an air gap, and the width of the groove 221 is the width W2 of the second heat-conducting part 22, which is equal to the width of the second area B, that is, W2 is 30mm.

[0073] For example, Figure 7As shown, the light emitting chip 1 includes a light emitting point 11, and along the first direction X, the width of the light emitting chip is 200 mm, and the light emitting point 11 is located at the center of the light emitting chip 1; the light emitting chip 1 includes a first area A and two second areas B, and the two second areas B are symmetrically located on both sides of the first area A. The width W1 of the first heat conducting part in contact with the first area A is 100 mm; the second heat conducting part 22 in contact with the second area B is an air gap, and the width of the groove 221 is the width W2 of the second heat conducting part 22, and W2 is 50 mm.

[0074] It should be noted that, in the case where the heat sink substrate 2 includes two or more second heat conducting parts 22 , the widths of the second heat conducting parts 22 may be equal or unequal, which is not limited here.

[0075] In some embodiments, Fig. 9 As shown in FIG. 10 , along the third direction Y, the length L1 of the second heat conducting portion 22 satisfies: L1 ≥ 1 / 2 × L2, and / or L1 ≤ L3;

[0076] Wherein, L2 represents the length of the light emitting chip 1 in the third direction Y, and L3 represents the length of the heat sink substrate 2 in the third direction Y. The third direction Y is perpendicular to the first direction X, and the third direction Y is perpendicular to the second direction Z.

[0077] The heat of the light emitting chip 1 is mainly concentrated within a preset distance from the light emitting point 11. Along the third direction Y, the heat is mainly concentrated at one end of the light emitting chip 1 close to the light emitting surface, that is, Figure 9-10 At one end of the light-emitting chip 1 aligned with the heat sink substrate, a first heat-conducting portion 21 and a second heat-conducting portion 22 with different thermal conductivities are provided on the side of the heat sink substrate 2 facing the light-emitting chip 1, in order to make the temperature distribution of the light-emitting chip 1 in the first direction X more uniform. In the third direction Y, the heat generated by the light-emitting chip 1 gradually decreases in the direction away from the light-emitting surface, and the temperature difference between the first area A and the second area B away from one end of the light-emitting surface is not large, which has little effect on the refractive index of the waveguide layer material, and there is no need to perform zoned heat dissipation at this position of the light-emitting chip 1. The length L1 of the second heat-conducting portion 22 can be greater than or equal to the preset length, and the preset length is equal to the length of the conduction area of ​​the heat generated by the light-emitting point 11 in the third direction Y. For example, the preset length is equal to half of the length L2 of the light-emitting chip (i.e., 1 / 2×L2), or the preset length is equal to the length L2 of the light-emitting chip. The length of the second heat-conducting portion 22 will not exceed the length L3 of the heat sink substrate 2, i.e., L1≤L3.

[0078] For example, Fig. 9 As shown, along the third direction Y, the length L1 of the second heat conducting portion 22 is less than the length L3 of the heat sink substrate, that is, L1<L3; and the length L1 of the second heat conducting portion 22 is greater than or equal to two-thirds of the length L2 of the light emitting chip, that is, L1≥2 / 3×L2.

[0079] For example, Fig.10 As shown, along the third direction Y, the length L1 of the second heat conducting portion 22 is equal to the length L3 of the heat sink base plate, that is, L1 = L3.

[0080] In some embodiments, Figure 11-13 As shown in any of the figures 17-19, the heat sink substrate 2 comprises: a stacked heat dissipation layer 20 and a heat dissipation substrate 24. The heat dissipation layer 20 is located on the side of the heat sink substrate 2 facing the light emitting chip 1, and the heat dissipation layer 20 comprises a first heat conducting portion 21 and a second heat conducting portion 22; the heat dissipation substrate 24 is located on the side of the heat dissipation layer 20 away from the light emitting chip 1.

[0081] In this embodiment, the heat sink substrate 2 is a composite layer structure. Along the direction away from the light emitting chip 1 , the heat sink substrate 2 includes a heat dissipation layer 20 and a heat dissipation substrate 24 stacked in sequence.

[0082] The heat dissipation layer 20 has a large thermal conductivity and has a good heat dissipation effect. The heat dissipation layer 20 includes at least one of a copper layer, an aluminum layer, and a silver layer. The heat dissipation layer 20 is set as a metal layer, which not only enables the heat sink substrate 2 to have a good heat dissipation effect, but also can electrically connect the heat sink substrate 2 to the electrode (such as the negative electrode or the positive electrode) of the light emitting chip 1. The heat dissipation layer 20 can be connected to a power source through a wire to achieve the purpose of the power source supplying power to the light emitting chip 1 through the heat dissipation layer 20.

[0083] The heat dissipation substrate 24 includes an aluminum nitride substrate and / or a silicon carbide substrate. Along the second direction Z, the thickness of the heat dissipation substrate 24 is generally 0.15 mm to 0.25 mm.

[0084] In some embodiments, along the second direction Z, the thickness H2 of the heat dissipation layer 20 satisfies: H2 ≥ 0.03 mm, and / or H2 ≤ 0.08 mm.

[0085] In this embodiment, the heat dissipation layer 20 includes a first heat conducting part 21 and a second heat conducting part 22, and the second heat conducting part 22 includes a groove 221, that is, the heat dissipation layer 20 is etched to form the groove 221. Part of the thickness of the heat dissipation layer 20 can be etched, or the entire thickness of the heat dissipation layer 20 can be etched, or after etching through the entire thickness of the heat dissipation layer 20, the heat dissipation substrate 24 continues to be etched downward.

[0086] In some embodiments, Figure 14-16 As shown in any one of Figures 20 to 22 , the heat sink substrate 2 further includes a welding layer 25 . The welding layer 25 is located on a side of the heat dissipation substrate 24 away from the heat dissipation layer 20 .

[0087] The welding layer 25 includes at least one of a copper layer, an aluminum layer and a silver layer. Figure 1-2The bottom plate of the tube shell 4 is usually made of materials such as oxygen-free copper or diamond copper, and the welding layer 25 is a metal layer, which can firmly fix the heat sink substrate 2 on the bottom plate of the tube shell 4.

[0088] In some embodiments, Fig.12 , 15 As shown in any one of Figures 18 and 21, the compensation heat-conducting structure 222 is fixedly connected to the heat dissipation substrate 24.

[0089] In this embodiment, the compensation heat-conducting structure 222 and the heat-dissipating substrate 24 are separate structures, and the two are fixedly connected by a thermally conductive adhesive or solder. The materials of the compensation heat-conducting structure 222 and the heat-dissipating substrate 24 can be the same or different. The preparation sequence of the heat sink substrate 2 is: forming a heat dissipating layer 20 on one side of the heat-dissipating substrate 24; then etching the heat dissipating layer 20 at a preset position to form a groove 221 that penetrates the thickness of the heat dissipating layer 20, and the preset position corresponds to the second area B of the light-emitting chip 1; fixing the compensation heat-conducting structure 222 in the groove 221.

[0090] In some embodiments, Fig.13 , 16 As shown in any one of Figures 19 and 22, the compensating heat-conducting structure is integrated with the heat dissipation substrate.

[0091] In this embodiment, the compensating heat-conducting structure 222 and the heat-dissipating substrate 24 are made of the same material, and the two are integrated, which is beneficial to simplifying the packaging process of the laser and improving the heat dissipation efficiency of the heat sink substrate. The preparation sequence of the heat sink substrate 2 is: on the surface of the heat-dissipating substrate 24 facing the heat-dissipating layer 20, the heat-dissipating substrate 24 at the position other than the second heat-conducting portion 22 (or the compensating heat-conducting structure 222) is etched, and the etching depth is equal to the thickness of the compensating heat-conducting structure 222, and then the heat-dissipating layer 20 is formed by sputtering at the etching position.

[0092] For example, Figure 23-24As shown, the laser further includes a steering component 8, a tube shell 4 and a cover plate 5. The tube shell 4 includes a side wall 41 and a bottom plate 42. The side wall 41 is located on one side of the bottom plate, and the cover plate 5 is located on the side of the side wall 41 away from the bottom plate 42. The bottom plate 42, the side wall 41 and the cover plate 5 form a sealed space, and the light-emitting chip 1, the heat sink substrate 2 and the steering component 8 are located in the sealed space. The light-emitting chip 1 and the heat sink substrate 2 complete eutectic through gold-tin solder to form a light-emitting component, also known as a Cos component. The light-emitting components and the steering component 8 are mounted on the patch area of ​​the bottom plate 42, the light-emitting components are arranged along the first direction X, the light-emitting chip 1 emits laser in the third direction Y, the slow axis direction of the light-emitting chip 1 is parallel to the first direction X, the first heat-conducting part 21 with high thermal conductivity is used to dissipate heat in the first area A, and the second heat-conducting part 22 with low thermal conductivity is used to dissipate heat in the second area B, so that the temperature gradient of the entire light-emitting chip 1 in the first direction X is reduced, the temperature distribution tends to be uniform, and the refractive index of the waveguide layer material tends to be uniform, thereby reducing the influence of the thermal lens effect, improving the slow axis far-field divergence angle and the beam quality, so that the overall beam quality of the packaged laser in the first direction X is improved, which is beneficial to the back-end whole machine application.

[0093] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

[0094] For the convenience of explanation, the above description has been made in conjunction with specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or limit the embodiments to the specific forms disclosed above. Based on the above teachings, various modifications and variations can be obtained. The selection and description of the above embodiments are to better explain the principles and practical applications, so that those skilled in the art can better use the embodiments and various different variations of the embodiments suitable for specific use considerations.

Claims

1. A laser, characterized in that: include: A light-emitting chip, comprising a first area and a second area, wherein the second area is at least located on one side of the first area along a first direction, and the light-emitting chip comprises at least one light-emitting point, and the light-emitting point is located in the first area; a heat sink substrate, located at one side of the light emitting chip along the second direction, the heat sink substrate including a first heat conducting portion and a second heat conducting portion on a side facing the light emitting chip, the first heat conducting portion overlapping the first area, the second heat conducting portion overlapping the second area, and the thermal conductivity of the second heat conducting portion being smaller than the thermal conductivity of the first heat conducting portion; The first direction is perpendicular to the second direction.

2. The laser according to claim 1, characterized in that The first heat conducting portion is in contact with the first region of the light emitting chip; The second heat conducting portion includes a groove, and the groove is recessed in a direction away from the light emitting chip.

3. The laser according to claim 2, characterized in that The second heat conducting portion further comprises: Compensation heat conduction structure; The groove is filled with the compensating heat-conducting structure, the compensating heat-conducting structure is in contact with the second area of ​​the light-emitting chip, and the thermal conductivity of the compensating heat-conducting structure is smaller than the thermal conductivity of the first heat-conducting part.

4. The laser according to claim 2, characterized in that Along the second direction, a depth H1 of the groove satisfies: H1 ≥ 0.01 mm, and / or H1 ≤ 0.08 mm.

5. The laser according to claim 1, characterized in that Along the first direction, the width W1 of the first heat conducting portion satisfies: W1 ≥ 100 μm, and / or W1 ≤ 250 μm; Along the first direction, the width W2 of the second heat conducting portion satisfies: W2>0 μm, and / or W2≤50 μm.

6. The laser according to claim 1, characterized in that Along the third direction, the length L1 of the second heat conducting portion satisfies: L1 ≥ 1 / 2 × L2, and / or L1 ≤ L3; Wherein, L2 represents the length of the light emitting chip in the third direction, L3 represents the length of the heat sink substrate in the third direction, the third direction is perpendicular to the first direction, and the third direction is perpendicular to the second direction.

7. The laser according to claim 3, characterized in that The heat sink substrate comprises: A heat dissipation layer, located on a side of the heat sink substrate facing the light-emitting chip, the heat dissipation layer comprising the first heat conducting portion and the second heat conducting portion; The heat dissipation substrate is located on a side of the heat dissipation layer away from the light emitting chip.

8. The laser according to claim 7, characterized in that The heat sink substrate further includes: a welding layer located on a side of the heat dissipation substrate away from the heat dissipation layer.

9. The laser according to claim 8, characterized in that The heat dissipation layer includes at least one of a copper layer, an aluminum layer and a silver layer; The heat dissipation substrate includes an aluminum nitride substrate and / or a silicon carbide substrate; The soldering layer includes at least one of a copper layer, an aluminum layer and a silver layer.

10. The laser according to any one of claims 7 to 9, characterized in that: The compensation heat-conducting structure is fixedly connected to the heat dissipation substrate; and / or, The compensation heat-conducting structure is integrated with the heat dissipation substrate.

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