Production method of INAND/NAND-based multi-partition storage device

A production method and technology of internal memory, applied in the direction of program loading/starting, instruments, program control devices, etc., can solve the problems of slow production speed, the programmer does not support distributed writing, etc., to achieve the effect of improving production speed

Inactive Publication Date: 2012-06-27
SHENZHEN ROADROVER TECH
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the technical problem that the production speed of the large-capacity internal memory based on INAND/NAND in the prior art is slow because the traditional burner does not support distributed writing. The present

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] A rapid production method of an INAND / NAND-based internal memory for use with electronic equipment. The above method is realized by means of a burner and a computer storing a supporting software program, and the internal memory is divided for storing system boot programs. The system file storage space of the module, and use the burner and computer to burn the system boot program in the system file storage space; add an SD card slot to the electronic device, and set up and store the system upgrade / production based on the same software version File, and the SD card that is stored with automation partition script program, on this basis, described method comprises the following steps:

[0011] A. Turn on the electronic equipment, power on the internal memory based on INAND / NAND and run the system boot program, the system boot program detects the to-be-produced flag of the internal memory, and if it detects the to-be-produced flag of the internal memory, then execute step B; ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a production method of an INAND/NAND-based multi-partition storage device, which solves the technical problem of slow production speed of an INAND/NAND-based large internal memory due to that the conventional programmer does not support separate writing in the prior art. The technical scheme is that the method is realized through the programmer and a computer in which matched software programs are stored, a system file storage space for storing a system bootstrap module is divided in the internal memory, and the system bootstrap is written in the system file storage space through the programmer and the computer; a SD card slot and a matched SD card are added in an electronic device, wherein the SD card stores a system upgrading file, a system production file, and a shell script file for judging whether the storage device is partitioned. In the method, the internal memory is partitioned through an external memory, and the system file is separately written in the internal memory, thus, the production speed of the internal memory is improved greatly.

Description

technical field [0001] The present invention relates to a production method of an INAND / NAND-based multi-partition storage device, in particular to a Linux-based embedded system. When INAND / NAND has a large capacity, it needs to be partitioned. During production, multi-partition files need to be Burn or write. Background technique [0002] In traditional software production and programming, the entire programming file is usually directly burned into INAND / NAND through the burner, but in recent years, with the development of storage technology, the storage capacity of INAND / NAND has been greatly improved , from 2GB to 4GB, and then to 8GB / 16GB, recently it has reached 32GB. It has become very time-consuming to burn a 32GB storage device through a burner. Now it takes 10~20 minutes to burn a 4GB INAND; Embedded system functions have also been greatly developed in recent years. Embedded devices are no longer satisfied with providing a single application, such as IPAD, smart p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F9/445G06K1/12
Inventor 高来红
Owner SHENZHEN ROADROVER TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap