Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash translation layer system

A flash memory conversion layer and address translation technology, applied in the field of flash memory storage, can solve problems affecting flash memory performance, etc., to reduce the amount of data copy, ensure flash memory life, and improve performance.

Active Publication Date: 2015-03-04
TSINGHUA UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a log block is used solely by a logical block, it will lead to frequent garbage collection; when a log block is shared by all logical blocks, it will cause a large amount of data copying during each garbage collection process, which will affect the performance of flash memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash translation layer system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0019] figure 1 It is a schematic diagram of the module structure of the flash translation layer system according to the embodiment of the present invention. Such as figure 1 As shown, the system includes: an address translation module 100 and a write operation processing module 200 . The address conversion module 100 is used to realize the conversion from the logical page number of the logical block to the physical page number of the physical block; wherein, the physical block includes a data block, a log block and an idle block, and the logical block corresponds to the data block one by one, each A logical block corresponds to at most two log blocks (corresponding to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash translation layer system, which relates to the field of flash memory. The flash translation layer system comprises an address translation module and a write operation processing module, the address translation module is used for translating logical addresses into physical addresses, physical blocks in the system include data blocks, log blocks and free blocks, logic blocks correspond to the data blocks one by one, each logic block at most corresponds to two log blocks, each log block corresponds to a plurality of logic blocks, and the write operation processing module is used for processing write operation of flash media. By the aid of the flash translation layer system, garbage collection frequency and data copying amount in a garbage collection process are balanced, erasing frequency and the data copying amount in the garbage collection process are reduced, the flash life is ensured, and the flash performance is improved.

Description

technical field [0001] The invention relates to the technical field of flash storage, in particular to a flash conversion layer system. Background technique [0002] Flash memory has the advantages of fast random access speed, shock resistance, and low energy consumption. In recent years, with the increase in storage capacity and the reduction in price of flash memory, flash memory has been more and more widely used. In a large number of desktop computers, solid-state hard disks with flash memory as the medium have been equipped. However, the memory cells of the flash memory can only be written after being erased, so local update operations cannot be performed. In addition, the erasing times of the memory cells of the flash memory are also limited. The flash translation layer is used to provide address translation functions for logical addresses, so that data can be updated in different places to improve the performance and lifespan of flash memory. According to the tran...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G06F12/06
CPCG06F2212/7201G06F2212/7205G06F12/0246
Inventor 胡事民廖学良
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com