110results about How to "Reduce the number of erasures" patented technology

The invention provides a high-performance reliable solid-state disk realizing method. The method includes: (1), dividing all flash memory chips in a solid-state disk into groups and forming an RAID (redundant array of independent disks) 4-level flash array in each group by N successive flash chips; (2), receiving and storing data through a cache; (3), judging whether the cache is filled up or not, if yes, entering the step (4), and if not, returning to the step (2); (4), extracting N-1 data blocks from the cache and computing check values of the N-1 data blocks; making up the N-1 data blocks and the check values into filled stripe data and writing back the flash array; returning to the step (2). The flash chips in the solid-state disk are used for establishing the RAID4-level physical array to assure data reliability. Faults at different levels including page level, block level, or even chip level can be processed. Besides, writing-in performance is improved by writing of filled stripes and sequence, and spatial and performance loss resulted from data errors can be reduced to the utmost.

The invention discloses a flash translation layer (FTL) with a data compression function and an implementation method. The FTL with the data compression function mainly comprises a compressor, a decompressor, a buffer, an address mapping management module, a trash recycling module and a loss balancing module. An LZ77 (Lempel-Ziv 77) algorithm based single-page compression strategy is adopted for the compression of written-in data and the decompression of readout data. A data compression technology is used for decompressing/compressing the readout/written-in data, a soft buffer is implemented in the FTL, and the data volume written-in and read-out from a flash memory solid state disk each time is reduced, thereby improving the integral reading and writing performance of the flash memory solid state disk.

The invention discloses a method and device for conducting data reading and writing on a storage device. The method for conducting data writing on the storage device comprises the steps that an unused bit of a circulation bitmap in a system table is selected, a new user data page and a new address mapping page are allocated, data to be written are written to the new user data page, a physical page number of the new user data page is written to the new address mapping page, the physical page number of the new address mapping page is written to the system table, and the system table is written to the storage device. The method for conducting data reading on the storage device comprises the steps that the physical page number of the address mapping page is obtained from the system table, the physical page number of the user data page is obtained from the address mapping page, and data needing to be read are obtained from the user data page. According to the technical scheme, data reading and writing are conducted according to the two-level mapping relation of the system table, the address mapping page and the user data page, power-down can be avoided through management of the circulation bitmap, the frequency for erasing the storage device is reduced through a cache mechanism, and abrasion balance is achieved.

The invention discloses a flash memory data transmission method, a flash memory storage system and a controller. The data transmission method is applied to data transmission from a cache memory to a plurality of flash memory groups through a single data bus in the flash memory storage system. The data transmission method comprises the step of: taking a logic block as a unit, and orderly arrangingand grouping data which are stored in the cache memory and belongs to continuous logical addresses; and the data transmission method also comprises the step of: transmitting sector data to each flashmemory group respectively through the single data bus according to the grouping in a staggering way, wherein the data belonging to the same logical block are to be transmitted and written into entityblocks of the same flash memory group. On the basis, the data are prevented from being dispersed into a plurality of entity blocks so as to reduce the abrasion of the entity blocks.

The invention discloses a method for organizing and accessing memory database indexes with high performance. The method comprises the following steps of: firstly, organizing an overall index table structure in stages; then, distributing a continuous virtual address space for each stage of bucket chain table in the virtual address space of a system; mapping each bucket chain table to a corresponding virtual address space; finally, organizing indexes and data in each stage of index structure by using a chain table manner, wherein each item in the chain table is a bucket organization, attribute information of the bucket organization, a pointer pointing to a next bucket organization and index entry information are stored in each bucket organization. According to a structure for organizing the database indexes provided by the invention, data are not needed to sort when being inserted or deleted; elements in a VAB (Virtual Address Bucket) are stored disorderly, data can be identified through a bitmap; different from the mode of a tree structure, the elements are not needed to sort when a datum is inserted or deleted once in order to keep the orderliness of inner elements, thus the times of frequently writing a NVM (Non-Volatile Memory) is reduced.

The invention provides a flash memory management method. By adopting the dynamic virtual sector technology, virtual sectors with different sizes can be assigned to the identical Block according to the application requirements, and are respectively used for storing different types of data records. The flash memory management method comprises the following steps: the flash memory is divided into at least two blocks, each block comprises a data area and a sector allocation table, wherein the data area is divided into at least two virtual sectors, the sector allocation table also comprises the attribute and the ID logical number of each virtual sector. The flash memory management method has the advantages that the Flash read-write speed and the system performance can be effectively improved, the read-write operation times can be greatly reduced, and the service life of the Flash can be prolonged; and compared with the prior solution, the Flash storage space can be fully utilized, and the security of the data can be guaranteed.

The invention discloses a method for accessing data of a Nand flash memory, which comprises the following steps: creating a Nand cache; when accessing data of the Nand flash memory, firstly calculating the Write Block Num of the Nand flash memory to be accessed according to the linear address of the Nand flash memory, then judging whether a cache block is hit in the Nand cache or not according to the Write Block Num and the hit block number in management information of all cache blocks, if so, accessing the hit cache block; if not, applying for the cache block and recording the Write Block Num in the hit block number when the access is the write operation, and further carrying out the write operation on the cache block; and directly reading the data from the Nand flash memory when the access is the write operation. The invention simultaneously discloses a device for accessing the data of the Nand flash memory. The adoption of the scheme of the invention can greatly improve the reading speed and the writing speed of the Nand flash memory.

The invention discloses a power failure protection method for intelligent IC (integrated circuit) card data. When an IC card is applied, data in the card are frequently modified, and if power fails after the data are erased in the process of modification, data to be written are not normally written while the original data are erased, and important data are lost. When the data in the card are modified, information to be written is firstly backed up to an RAM (random access memory), backup checking information is then computed, a backup and restore mark is set in a restore state, the information is written into the RAM together, all data are organized in the RAM and then written into an EEPROM (electrically erasable programmable read-only memory) backup area, the data are restored, effective data are written into a target data area, and then the backup and restore mark in the backup area is modified into a backup state. Data backup time is shortened by the aid of rapid access features of the RAM, the data are organized in the RAM and then written into the EEPROM backup area once, the frequency of writing the data into an EEPROM is effectively decreased, and the service life of the IC card is prolonged.

The invention discloses a quick read-write method and a quick read-write device for a flash memory. The method comprises the following steps of: dividing entries into each sector in the flash memory, and dividing to-be-written data for storage according to the length of the entries, wherein each entry is used for bearing data; when the data are written, querying the unused entries in the current sector, and writing the data into the unused entries; when only one unused sector is queried, if the entries of invalid data are stored in other sectors is detected, reclaiming the space occupied by the entries; otherwise, directly writing the data into the unused data. The data are organized and stored according to a form of entries of fixed formats. When the data are modified, the original entries are not modified, but the original entries are set to be invalid, and new entries are written, so the erasing frequency is reduced, the average writing speed is quickened, and balanced access of different storage units of the FLASH is ensured.

The invention relates to the field of data acquisition, storage and transmission, particularly relates to a method for data acquisition, storage and transmission in an embedded system. The invention provides a method for data acquisition, storage and transmission, which comprises the following flows of: flow A, a data acquisition and storage flow; flow B, data binding and mapping between a transmitting window and a cache region; flow C: a data transmission flow. The method for data acquisition, storage and transmission is simple to realize, steady and reliable, has high efficiency, quick transmission speed and high transmission efficiency, cannot influence the real-time property of the system, and can prolong the service life of products and reduce communication traffic, thereby reducing communication traffic cost.

The invention discloses a method for writing data into storage equipment and belongs to the technical field of storage. The method comprises the step of when data to be written is written to the storage equipment, writing the data to be written into the storage equipment by the processing on a cache area, a fast change area, a first mapping table, a second mapping table and a mark area according to the data to be written, the length of the data to be written and the logic address of the data to be written. The erasing times of the storage equipment are reduced by adopting cache; the data loss during power off is prevented by adopting the mark area; the abrasion balance of the storage equipment in the use process is realized by adopting the fast change area, and the service life of the storage equipment is ensured; the space of the storage equipment is saved by adopting the mode of storing the mapping tables into the cache area.

The invention discloses a method and a device for decreasing the frequency of erasing and writing subscriber identity module files, which are used for solving the problems of too short service lives of subscriber identity modules, unsmooth business operation and the like due to the fact that the subscriber identity modules are erased and written frequently in businesses of the internet of things in the environment of the internet of things. The method employs linear fixed-length files infrequently used in some businesses of a subscriber identity module, pre-reading fixed-length files enter a terminal storage area, the operating speed of a business system is increased, erasing and writing for the subscriber identity module are firstly stored in a terminal storage card in operation of the business system, and then the subscriber identity module is erased and written after read-in conditions are met, so that the frequency of visiting the subscriber identity module is decreased effectively, and the service life of the subscriber identity module is prolonged.

The invention discloses a pre-writing reading circuit of resistive random access memory. The pre-writing reading circuit includes a memory unit module, a reference current source module, a protection circuit module, a mirror circuit module, a current control module, a pulse selection and read-write logic module, a data reading module, a confirmation module, and a control buffer module. The input end of the memory unit module is respectively connected to the output end of the current control module and the output end of the protection circuit module. The output end of the memory unit module is in connection with the input end of the data reading module. A reference voltage source and a current-generating resistor are built in the reference current source module, the output end of which is in connection with the input end of the mirror circuit module. The input end of the protection circuit module is in electric connection with an external writing-read enable signal and a clock signal. The output end of the mirror circuit module is electrically connected to one input end of the current control module. The pre-writing reading circuit provided in the invention can, to some extent, solve the problems of frequent resistive random access memory unit operation, short resistive random access memory service life, and low memory unit reliability.

The embodiment of the invention provides a data updating method and device. The data updating method comprises the steps that an access request for an embedded database in a Flash storage chip is received, and first data in the embedded database is determined and then saved in a memory space, wherein when the access request for the first data is received, the first data in the memory space is read, written and then updated to the Flash storage chip after a set time period. According to the method, when a read-write operation is conducted on the first data in the embedded database, the first data is not updated to the Flash storage chip after each time of the read-write operation but saved in the memory space, the read-write operation on the first data is executed in the memory space, the first data is updated to the Flash storage chip after the set time period, therefore, the erasing frequency of the Flash storage chip is significantly decreased, then the service life of the Flash storage chip is prolonged, and the equipment maintenance cost is reduced.

The invention discloses a data storage method and an electronic device and belongs to the field of data storage. The data storage method is applied to the electronic device, and the electronic device is connected with an HDD (hard disk drive) and an SSD (solid state drive). The data storage method includes respectively caching data to be stored into an internal memory and the HDD of the electronic device; writing the data stored in the internal memory into the SSD when the electronic device is normally shut down; acquiring the data from the HDD and writing into the SSD when the electronic device is abnormal. The electronic device comprises a cache module and a storage module. Accordingly, erasing and writing times of the SSD is decreased, service life of the SSD is prolonged, and safety and reliability of data storage are effectively improved.

The invention provides a method for managing a plurality of blocks of a flash memory and a relevant memory device and a controller thereof. The method comprises the following steps of: recording/updating link information for a logic block address, wherein the link information comprises a plurality of physical block addresses which are linked to the logic block address and each physical block address represents one of the plurality of blocks; and when a block represented by one of the plurality of physical block addresses does not contain any active page, selectively erasing the block and removing the physical block address from the link information. The invention also provides a relevant memory device and a controller thereof. The controller comprises a read-only memory which is used for storing a program code and a microprocessor which is used for executing the program code so as to access the flash memory and manage the plurality of blocks.

The present invention discloses a flash memory data storage method, comprising the following steps of setting at least one swap block, setting a corresponding structural body for each swap block, writing data into the swap block, assigning a value to the structural body of the swap block, performing data relocation according to the structural body value of at least one swap block, and resetting the value of each structural body. Through the method of the present invention, after data is written into the swap block, data relocation is not performed immediately but performed uniformly according to the structural bodies of the swap blocks after all data of the writing operation at a time is written into the appropriate swap blocks. Therefore, the method of the present invention decreases data relocation frequency so as to improve data storage speed. Meanwhile, as the erasing times of flash memory are reduced, the life span of the flash memory is prolonged.

The invention relates to a memory space self-adaptive allocation method of a memory. The method comprises the following steps of: dividing all sectors of each memory chip in a memory into a data areaand a mark area, reading information of each memory chip one by one, mapping a hardware address space of an actual data area of each memory chip into a logic address space, and mapping the mark area of each memory chip into a mark space address table; executing an erase operation on the sectors which are displayed to be not erased, and updating mark bytes of the sectors in the mark space for the sectors which are already subjected to the erase operation in each storage chip; setting a data initial address needing to be written into the storage chip as a logic address of the storage chip; taking all the existing data of the to-be-written sector and the to-be-written data as final data of the to-be-written sector; erasing sector data or directly writing final data into a sector by a microcontroller according to whether the sector in the storage chip executes erasing operation, repeated erasing of the storage chip is avoided, and the service life of the memory is prolonged.