Pre-writing reading circuit of resistive random access memory and operation method thereof

Abstract

The invention discloses a pre-writing reading circuit of resistive random access memory. The pre-writing reading circuit includes a memory unit module, a reference current source module, a protection circuit module, a mirror circuit module, a current control module, a pulse selection and read-write logic module, a data reading module, a confirmation module, and a control buffer module. The input end of the memory unit module is respectively connected to the output end of the current control module and the output end of the protection circuit module. The output end of the memory unit module is in connection with the input end of the data reading module. A reference voltage source and a current-generating resistor are built in the reference current source module, the output end of which is in connection with the input end of the mirror circuit module. The input end of the protection circuit module is in electric connection with an external writing-read enable signal and a clock signal. The output end of the mirror circuit module is electrically connected to one input end of the current control module. The pre-writing reading circuit provided in the invention can, to some extent, solve the problems of frequent resistive random access memory unit operation, short resistive random access memory service life, and low memory unit reliability.

Description

technical field [0001] The invention belongs to the technical field of storage, and more specifically relates to a read-before-write circuit of a resistive variable memory and an operation method thereof. Background technique [0002] In the past few decades, integrated circuit technology has developed by leaps and bounds, and DRAM, SRAM and Flash memory have become the core products of the information industry. The memory market driven by consumer products requires higher density, high speed, low power consumption, non-volatile and inexpensive memory products. So far, Flash is the most successful high-density non-volatile memory. However, Flash also has some bottleneck problems. For example, as the storage density increases, its charge leakage becomes more and more serious, and at the same time, the programming voltage cannot be reduced in proportion to the size of the device. Therefore, more and more new storage technologies are receiving attention. Among them are ferro...

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Problems solved by technology

[0004] Aiming at the defects of the prior art, the object of the present invention is to provide a read-before-write circuit of the resistive variable memory, which can solve the problem of operating times of the resistive variable memory unit to a certain extent through the read-before-write and post-write confirmation operations of the memory unit. , the short service life of the resistive variable memory and the low reliability of the storage unit

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