Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory space self-adaptive allocation method of memory

A storage space and allocation method technology, applied in the field of memory, can solve the problems of reducing the efficiency of memory space usage and shortening the service life of the memory, and achieve the effects of improving initialization efficiency, improving service life, and reducing the number of erasing and writing.

Pending Publication Date: 2020-04-24
NINGBO SANXING INTELLIGENT ELECTRIC
View PDF15 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, it is necessary to perform multiple repeated erasing operations very frequently, which not only reduces the space usage efficiency of the memory, but also greatly shortens the service life of the memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory space self-adaptive allocation method of memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0032] Such as figure 1 As shown, this embodiment provides a method for adaptively allocating storage space of a memory, which is suitable for a memory with a microcontroller and multiple memory chips. Wherein, the memory selected in the present embodiment is the memory of embedded product; The micro-controller of its memory chip connects memory chip respectively through SPI mouth; Wherein, micro-controller controls each memory chip to read and write or erase delete operation. Specifically, the storage space adaptive allocation method of the memory in this embodiment includes the following steps:

[0033] Step 1, divide the storage space of each memory chip in the memory into a data area and a label area; wherein, assuming that the memory chip has N sectors, the data area here occupies the first N-1 sectors of the memory chip, and the label ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a memory space self-adaptive allocation method of a memory. The method comprises the following steps of: dividing all sectors of each memory chip in a memory into a data areaand a mark area, reading information of each memory chip one by one, mapping a hardware address space of an actual data area of each memory chip into a logic address space, and mapping the mark area of each memory chip into a mark space address table; executing an erase operation on the sectors which are displayed to be not erased, and updating mark bytes of the sectors in the mark space for the sectors which are already subjected to the erase operation in each storage chip; setting a data initial address needing to be written into the storage chip as a logic address of the storage chip; taking all the existing data of the to-be-written sector and the to-be-written data as final data of the to-be-written sector; erasing sector data or directly writing final data into a sector by a microcontroller according to whether the sector in the storage chip executes erasing operation, repeated erasing of the storage chip is avoided, and the service life of the memory is prolonged.

Description

technical field [0001] The invention relates to the field of memory, in particular to a storage space adaptive allocation method of the memory. Background technique [0002] In embedded products, there are more and more applications for big data processing. Due to the need to process large data, the memory in the product is frequently used. For example, memory is frequently used to record logs, save frozen data, record fault information, and so on. The current application operations for memory mainly include reading and writing operations and erasing operations for data. At the same time, due to the limit of the maximum number of erasing and writing of the memory (generally 100,000 times), how to optimize the application operation of the memory to prolong its service life appear more and more important. [0003] In order to effectively save its own storage space, the existing memory mainly follows the frequent execution of erasing and reading and writing operations for da...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246Y02D10/00
Inventor 许钢汝黎明潘焱符斌杰
Owner NINGBO SANXING INTELLIGENT ELECTRIC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products