Graphene-based three-dimensional integrated circuit devices

A technology of integrated circuits and graphene layers, which is applied in the direction of electrical solid devices, circuits, electrical components, etc., and can solve problems such as restricting the development of graphene

Active Publication Date: 2015-11-25
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current lack of simple and low-cost graphene fabrication processes limits the development of graphene applications.

Method used

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  • Graphene-based three-dimensional integrated circuit devices
  • Graphene-based three-dimensional integrated circuit devices
  • Graphene-based three-dimensional integrated circuit devices

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Embodiment Construction

[0013] Embodiments of graphene-based three-dimensional (3D) integrated circuit devices and methods of forming the same are disclosed herein. In the semiconductor industry, a 3D integrated circuit (IC) generally refers to a chip having two or more layers of active electronic components integrated vertically and horizontally into a single circuit. 3DICs may offer many significant advantages such as: smaller footprint (packing more functionality into a small space), speed (average wire length is much shorter, which in turn reduces signal propagation delay and improves overall performance), Power consumption (by keeping the signal on-chip (signalon-chip), the resulting shorter lines reduce power consumption and produce less parasitic capacitance), and heterogeneous integration, etc. In the case of heterogeneous integration, different circuit layers can be formed in different processes, or even on different types of wafers. Furthermore, components with otherwise entirely incompati...

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Abstract

A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.

Description

technical field [0001] The present invention relates generally to semiconductor device fabrication and, more particularly, to graphene-based three-dimensional (3D) integrated circuit devices. Background technique [0002] Graphene refers to a two-dimensional planar sheet of carbon atoms arranged in a hexagonal benzene ring structure. Freestanding graphene structures are theoretically stable only in two dimensions, which means that in three dimensions there is no truly planar graphene structure, which is unstable due to the formation of curved structures, such as soot ( soot), fullerenes, nanotubes or buckled two-dimensional structures. However, two-dimensional graphene structures can be stable when supported on a substrate, for example, on the surface of a silicon carbide (SiC) crystal. Freestanding graphene membranes have also been fabricated, but they do not have the ideal flat geometry. [0003] Structurally, graphene has sp 2 Hybrid orbitals formed by hybridization. ...

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/12
CPCH01L27/0688H01L29/1606Y10S977/755H01L21/8256H01L27/088
Inventor郭德超汉述仁林崇勳苏宁
OwnerTAIWAN SEMICON MFG CO LTD