Luminescent film, and preparation method and application thereof
A luminescent thin film and thin film preparation technology, which is applied in the direction of luminescent materials, chemical instruments and methods, vacuum evaporation coating, etc., can solve the problems of expensive equipment, low luminous intensity of luminescent film, complicated process, etc., and achieve stable luminous performance and improved Luminous intensity and luminous efficiency, the effect of simple process
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Embodiment 1
[0044] Preparation of ceramic sputtering targets: BaO, MgO, SiO with a purity of 99.99% 2 , Fe 2 o 3 and CeO 2 The powders are uniformly mixed to obtain a mixture, and the total mass of the mixture is 100g, wherein the mass percentage of BaO is 24.7%, the mass percentage of MgO is 6.4%, and the SiO 2 The mass percentage content is 61.9%, Fe 2 o 3 The mass percentage content is 2%, CeO 2 The mass percentage content is 5%; after uniform mixing, it is sintered at 1200°C to form a Φ50×2mm ceramic target;
[0045] Substrate acquisition: Clean the sapphire substrate successively with acetone and absolute ethanol, then corrode it with concentrated phosphoric acid, rinse it with deionized water, dry it with high-purity nitrogen gas, and put it into a vacuum chamber;
[0046] Preparation of luminescent film: first place the ceramic sputtering target and the substrate in the vacuum chamber, and make the distance between the ceramic sputtering target and the substrate 70mm, and the...
Embodiment 2
[0049] Preparation of ceramic sputtering targets: BaO, MgO, SiO with a purity of 99.99% 2 , Fe 2 o 3 and CeO 2 The powders are uniformly mixed to obtain a mixture, and the total mass of the mixture is 100g, wherein the mass percentage of BaO is 20%, the mass percentage of MgO is 10%, and the SiO 2 The mass percentage content is 68.7%, Fe 2 o 3 The mass percentage content is 0.3%, CeO 2 The mass percentage content is 1%; after uniform mixing, it is sintered into a Φ50×2mm ceramic target at 1200°C;
[0050] Substrate acquisition: Clean the sapphire substrate successively with acetone and absolute ethanol, then corrode it with concentrated phosphoric acid, rinse it with deionized water, dry it with high-purity nitrogen gas, and put it into a vacuum chamber;
[0051] Preparation of luminescent film: first place the ceramic sputtering target and the substrate in the vacuum chamber, and make the distance between the ceramic sputtering target and the substrate 70mm, and then us...
Embodiment 3
[0053] Preparation of ceramic sputtering targets: BaO, MgO, SiO with a purity of 99.99% 2 , Fe 2 o 3 and CeO 2 The powders are uniformly mixed to obtain a mixture, and the total mass of the mixture is 100g, wherein the mass percentage of BaO is 30%, the mass percentage of MgO is 10%, and the SiO 2 The mass percentage content is 67%, Fe 2 o 3 The mass percentage content is 1%, CeO 2 The mass percentage content is 2%; after uniform mixing, it is sintered at 1200°C to form a Φ50×2mm ceramic target;
[0054] Substrate acquisition: Clean the sapphire substrate successively with acetone and absolute ethanol, then corrode it with concentrated phosphoric acid, rinse it with deionized water, dry it with high-purity nitrogen gas, and put it into a vacuum chamber;
[0055] Preparation of luminescent film: first place the ceramic sputtering target and the substrate in the vacuum chamber, and make the distance between the ceramic sputtering target and the substrate 50mm, and then use...
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