Method for forming bar-shaped structures

A bar-shaped graphics and bar-shaped technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of semiconductor structure electrical performance drift and other problems, and achieve the effect of good etching uniformity and good uniformity

Active Publication Date: 2014-07-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Application Information

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Problems solved by technology

Please refer to figure 1 , a number of strip structures 10 are arranged parallel to each other on the semiconductor substrate 01, but after testing, it is found that the strip structures 10 at the middle position 11 and the strip structures 10 at the edge positions 12 formed by final etching have the width, The depth, sidewall morphology, etc. are different, so that the electrical properties of the final semiconductor structure will drift

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  • Method for forming bar-shaped structures
  • Method for forming bar-shaped structures
  • Method for forming bar-shaped structures

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Embodiment Construction

[0025] After testing, it is found that using the existing etching process will make the width, depth, and sidewall morphology of the strip structures in different regions different, so that the electrical properties of the finally formed semiconductor structure will drift. The inventors found that this is mainly caused by the loading effect (Loading Effect) of dry etching. Since the density of the pattern to be etched corresponding to the middle position 11 is relatively high, and the density of the pattern to be etched corresponding to the edge position 12 is relatively small, the concentration of the etching gas or etching plasma at the middle position 11 is diluted, and the concentration of the etching plasma at the middle position The concentration of the etching gas or etching plasma at 11 is lower than the concentration of the etching gas or etching plasma at the edge position 12, and the different concentrations of the etching gas or etching plasma in different regions w...

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Abstract

Provided is a method for forming bar-shaped structures. A first mask graph is formed on the surface of a to-be-etched material layer; the to-be-etched material layer is etched with the first mask graph as a mask, and a first bar-shaped graph is formed and comprises a plurality of parallel first bar-shaped structures evenly arranged; second mask graphs are formed on the surfaces of the first bar-shaped structures and correspond to the middle area of the first mask graph; exposed first bar-shaped structures are etched with the second mask graphs as masks, and second bar-shaped graphs are formed. Due to the fact that the parallel first bar-shaped structures evenly arranged are firstly formed, etching evenness of the first bar-shaped structures is good, then the second mask graphs are used for etching to form the second bar-shaped structures, and due to the fact that the second bar-shaped structures are located at the middle area of the first bar-shaped structures, evenness of widths, depths and side wall appearances of the second bar-shaped structures is good.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a strip structure. Background technique [0002] With the rapid development of Ultra Large Scale Integration (ULSI), the manufacturing process of integrated circuits has become more and more complex and fine. The width of the structure becomes thinner and the distance between the strip structures becomes smaller and smaller, and it becomes more and more difficult to form a strip structure that meets the process requirements by conventional dry etching technology. [0003] In the current manufacturing process, the strip structure is usually formed by exposing and developing the photoresist layer with a mask plate with a strip pattern to form a strip-shaped photoresist layer or a strip-shaped photoresist layer with openings. The strip-shaped photoresist layer or the photoresist layer with strip-shaped openings is used as a mask to dry-etch the film to be etched t...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/027
CPCH01L21/027H01L21/3086H01L21/3088H01L29/66795
Inventor洪中山
OwnerSEMICON MFG INT (SHANGHAI) CORP