Gettering layer forming device, gettering layer forming method, and computer storage medium

A vertical direction and substrate technology, which is applied in the field of gettering layer formation devices, can solve problems such as chip cracking, chipping, and chip flexural strength weakening

Pending Publication Date: 2020-01-14
TOKYO ELECTRON LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The damaged layer causes residual stress on the wafer. Therefore, for example, the flexural strength of the chip obtained by dicing the wafer is weakened, and the chip may be cracked or chipped.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gettering layer forming device, gettering layer forming method, and computer storage medium
  • Gettering layer forming device, gettering layer forming method, and computer storage medium
  • Gettering layer forming device, gettering layer forming method, and computer storage medium

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach >

[0081] Next, a first embodiment of the gettering layer forming unit 100 will be described. Such as image 3 and Figure 4 As shown, the gettering layer forming unit 100 has a polishing film 120 , a soft part 121 , a base 122 , a spindle 123 , a drive part 124 , and a water supply part 125 .

[0082] The polishing film 120 and the soft part 121 are provided so as to be supported on the base 122 . A drive unit 124 is provided on the base 122 via a spindle 123 . Drive unit 124 incorporates, for example, a motor (not shown), and moves polishing film 120 , soft portion 121 , and base 122 in the vertical direction and rotates polishing film 120 , soft portion 121 , and base 122 .

[0083]The polishing film 120 contains abrasive grains, and can be brought into contact with the wafer W to polish the wafer W. In addition, the polishing film 120 is thin and flexible. Furthermore, the polishing film 120 is provided in such a size as to be in contact with the entire back surface of t...

no. 2 Embodiment approach >

[0098] Next, a second embodiment of the gettering layer forming unit 100 will be described. The gettering layer forming unit 100 of the second embodiment is as follows Figure 7 As shown, instead of the flexible part 121 of the first embodiment, there is a flexible part 200 filled with a fluid inside. Various fluids, such as water, oil, and air, are used as the fluid filled into the soft part 200 . In addition, other configurations of the gettering layer forming unit 100 of the second embodiment are the same as those of the gettering layer forming unit 100 of the first embodiment.

[0099] in such as Figure 8 In a state where the polishing film 120 is not in contact with the wafer W as shown in (a), the polishing film 120 and the soft portion 200 are flat.

[0100] On the other hand, if Figure 8 If the polishing film 120 contacts the wafer W as shown in (b), since the polishing film 120 and the soft portion 200 have flexibility, the lower surface of the polishing film 12...

no. 3 Embodiment approach >

[0110]Next, a third embodiment of the gettering layer forming unit 100 will be described. The gettering layer forming unit 100 of the third embodiment is as follows Figure 10 As shown, a polishing film 300 having a concave-convex shape on the surface is used instead of the polishing film 120 of the first and second embodiments. In addition, other configurations of the gettering layer forming unit 100 of the third embodiment are the same as those of the gettering layer forming unit 100 of the first embodiment.

[0111] The polishing film 300 has a film 301 and a plurality of protrusions 302 formed on the surface of the film 301 . The protrusions 302 contain abrasive grains. In addition, the protruding portion 302 has a tapered shape whose width decreases from above to below in a side view. The height of the protrusion 302 is not particularly limited, and is, for example, 40 μm to 50 μm.

[0112] In this case, when the polishing film 300 comes into contact with the wafer W ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A gettering layer forming device for forming a gettering layer on a substrate has: a substrate holding part that holds the substrate; a lapping film that contacts the substrate held in the substrate holding part and polishes said substrate; a base that supports the lapping film, and is capable of moving in the vertical direction and rotating; and a water supply unit that supplies water to the substrate held in the substrate holding part.

Description

technical field [0001] (Cross-reference of related application) [0002] This application claims priority based on Japanese Patent Application No. 2017-109588 for which it applied in Japan on June 1, 2017, and uses the content of this patent application here. [0003] The present invention relates to a gettering layer forming device for forming a gettering layer on a substrate, a gettering layer forming method using the gettering layer forming device, and a computer storage medium. Background technique [0004] In recent years, in the manufacturing process of semiconductor devices, for semiconductor wafers (hereinafter referred to as wafers) on which a plurality of electronic circuits and other devices are formed on the surface, the back surface of the wafer is ground and polished to make the wafer thinner. [0005] When the back surface of the wafer is ground (rough grinding and finish grinding), a damaged layer including cracks, scratches, etc. is formed on the back surfa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/322H01L21/304
CPCH01L21/304B24B1/04H01L21/67219H01L21/68771H01L21/68764H01L21/3221H01L21/322H01L21/30625H01L21/6708H01L21/67173H01L21/67288B24B5/047
Inventor福冈哲夫
OwnerTOKYO ELECTRON LTD