Memory system

A storage system and storage area technology, applied in the computer field, can solve problems such as high management complexity and large FTL files, and achieve the effect of speeding up access efficiency and improving data access performance

Pending Publication Date: 2020-05-19
河南文正电子数据处理有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] As the capacity of solid-state drives gets higher and higher, FTL files are getting bigger and bigger, and management complexity is getting higher and higher

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory system
  • Memory system
  • Memory system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0026] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0027] Such as figure 1 As shown, a solid state disk device according to an embodiment of the present invention includes:

[0028] The solid-state hard disk 110 is made of a controller and a flash ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a memory system. The memory system comprises: a solid state disk composed of a controller and a flash memory array, wherein the controller does not contain a cache, FTL table data is stored in a first memory area of the solid state disk, common FTL table data is stored in a second memory area, and FTL table index data is stored in a third memory area; a host processor, wherein after the host processor loads a solid state disk drive, the solid state disk is accessed through a bus structure, a host memory is accessed through a bus structure, the first memory area, the second memory area and the third memory area are initialized in the host memory, temporary FTL table data is stored in the first memory area, the common FTL table data is stored in the second memory area,and the FTL table index data is stored in the third memory area; and the host memory used for loading the solid state disk data according to an instruction of the host processor. The access efficiency of an FTL mapping table is improved.

Description

technical field [0001] The present invention relates to the technical field of computers, in particular to a storage system. Background technique [0002] Solid State Disk (SSD) is gradually replacing mechanical hard disks and becoming a mainstream storage device due to its high-speed read and write performance and low failure rate. SSD stores data through Nand flash. With the development of technology, Nand flash particles have changed from single-level cell (Single-Level Cell, SLC), multi-layer cell MLC (Multi-Level Cell), triple-layer cell (Trinary-Level Cell, TLC) has evolved to 3D Nand, and the storage density is getting higher and higher. Therefore, large-capacity solid-state drives are increasingly entering the enterprise-level and civilian-level markets. [0003] Compared with traditional disks, Nand Flash has low storage latency, low power consumption, higher storage density, better shock resistance and low noise. However, due to the characteristics of Nand Flash ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0607G06F3/0638G06F3/0679
Inventor 杜明书马晓丽杜薇
Owner 河南文正电子数据处理有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap