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Apparatus for controlling NAND flash memory device and method for controlling the same

A control device and memory technology, applied in the device field of NAND flash memory devices, to achieve the effects of solving data corruption, preventing failures, and improving operational reliability

Pending Publication Date: 2022-07-29
LG INNOTEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In addition, the embodiment provides an apparatus for controlling a NAND flash memory device and a control method thereof, which can solve problems that may occur when the memory operates when the power is interrupted by preventing access to the memory when the power is interrupted.

Method used

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  • Apparatus for controlling NAND flash memory device and method for controlling the same
  • Apparatus for controlling NAND flash memory device and method for controlling the same
  • Apparatus for controlling NAND flash memory device and method for controlling the same

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Embodiment Construction

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0040] However, the spirit and scope of the present invention are not limited to parts of the described embodiments, but may be embodied in various other forms, and one or other of the embodiments may be selectively combined and substituted within the spirit and scope of the present invention. multiple elements.

[0041] In addition, unless otherwise clearly defined and described, terms (including technical terms and scientific terms) used in the embodiments of the present invention may be interpreted as the same meanings as commonly understood by those of ordinary skill in the art to which the present invention belongs, and such as in common dictionaries Those terms defined in can be construed to have meanings consistent with their meanings in the context of the relevant art. Also, the terms used in the embodiments of the present invention are u...

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Abstract

A control apparatus for a NAND flash memory device according to an embodiment includes: a NAND flash memory; a controller configured to generate a command signal to program, read, and erase data in the NAND flash memory; and an auxiliary power circuit configured to maintain power for operating the memory and the controller during a first time starting from a first point in time at which a voltage of the power supply is less than a preset voltage, in which the controller is configured to block the command signal during the first time, and in which the auxiliary power circuit is configured to maintain power for operating the memory and the controller during the first time. The power supplied to the memory is blocked for at least a second time starting at least from a second time point after the first time.

Description

technical field [0001] Embodiments relate to an apparatus for controlling a NAND flash memory device, and more particularly, to an apparatus for controlling a NAND capable of preventing data corruption that occurs in an unstable power environment such as a sudden power failure An apparatus for a flash memory device and a method for controlling the same. Background technique [0002] Recently, there has been an increasing demand for non-volatile memory devices that can be electrically programmed and erased and that do not require a refresh function that periodically rewrites data. In addition, in order to develop a large-capacity memory device capable of storing a large amount of data, research into a high-integration technology for memory devices is being actively conducted. Here, 'programming' refers to an operation of writing data into a memory cell, and 'erase' refers to an operation of removing data written in a memory cell. [0003] Therefore, NAND flash memory device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/30G11C16/14G11C5/14
CPCG11C5/14G11C16/14G11C16/0483G11C16/10Y02D10/00G11C16/30
Inventor 辛相勋南亨沂
Owner LG INNOTEK CO LTD