Beta-Ga2O3 nanowire / p-Si heterojunction photoelectric detector and preparation method thereof

Abstract

The invention relates to the technical field of nanowire photoelectric detector preparation, in particular to a beta-Ga2O3 nanowire / p-Si heterojunction photoelectric detector and a preparation method thereof.The preparation method comprises the following steps that Au particles are subjected to annealing treatment after evaporation, and an area containing Au nanoparticles and an area not containing Au nanoparticles are formed on the surface of a p-Si substrate; putting a Ga elementary substance and the annealed p-Si substrate into a tubular furnace, and enabling the Ga elementary substance to grow a beta-Ga2O3 nanowire on the Au-containing nanoparticles; and respectively manufacturing electrodes on the surface of the beta-Ga2O3 nanowire and the surface of the p-Si substrate on which no nanowire grows, so as to obtain the beta-Ga2O3 nanowire / p-Si heterojunction photoelectric detector. The preparation method disclosed by the invention has the advantages of high material quality and yield, simple device preparation method, low cost and the like, and the practical application of the beta-Ga2O3 nanowire-based solar-blind ultraviolet photoelectric detector is promoted.

Description

Technical Field

[0001] The present invention relates to the technical field of nanowire photoelectric detector preparation, and in particular to a β-Ga2O3 nanowire / p-Si heterojunction photoelectric detector and a preparation method thereof. Background Art

[0002] Solar-blind ultraviolet photodetectors with low noise and strong anti-interference capabilities have broad application prospects in fire alarm, ozone monitoring, missile tracking and other fields. β-Ga2O3 nanowires have become an ideal material for making solar-blind ultraviolet photodetectors due to their wide bandgap of 4.9eV, high specific surface area and crystal quality. However, there are still problems with β-Ga2O3 nanowire photodetectors, such as cumbersome preparation process and low conductivity. The preparation process of a few nanowire array devices is relatively simple, and the nanowire network is dispersed on the surface of the interdigitated electrode to make a device, but the connection between the nanowire and the electrode is not tight enough, and the density of the nanowire is reduced after dispersion, which is not conducive to giving full play to the advantages of the nanowire network.

[0003] Moreover, most of the existing nanowire photodetectors are single nanowire devices, and their preparation method is to disperse the nanowires and then make electrodes at both ends of the single nanowire. The preparation process is relatively complex, the technical requirements are high, and the photoelectric performance is low. Summary of the invention

[0004] In view of the deficiencies of the above-mentioned prior art, the object of the present invention is to provide a β-Ga2O3 nanowire / p-Si heterojunction photodetector and a method for preparing the same. The preparation method of the present invention provides a way to combine a one-dimensional nanowire with a two-dimensional substrate to make a heterojunction photodetector, simplifies the preparation process of the nanowire photodetector, and obtains excellent photoelectric performance.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] A method for preparing a β-Ga2O3 nanowire / p-Si heterojunction photoelectric detector comprises the following steps:

[0007] Au particles and p-Si substrate are placed in an evaporator for evaporation, and areas containing Au film and areas without Au film are formed on the surface of the p-Si substrate. In the preparation for evaporation, the p-Si substrate is fixed on the sample stage of the evaporator with heat-resistant glue. The evaporated Au particles form an Au film on the substrate surface, while the substrate area covered by the heat-resistant glue has no Au film, which provides convenience for the subsequent production of electrodes on the p-Si surface.

[0008] The p-Si substrate after evaporation is annealed to make the Au film melt and aggregate into Au nanoparticles. By controlling the distribution of Au nanoparticles, areas containing Au nanoparticles and areas without Au nanoparticles are simultaneously formed on the surface of the p-Si substrate.

[0009] The Ga single element raw material and the annealed p-Si substrate are placed in a closed tubular furnace, air is introduced to provide an O source, and heating is performed to make the Ga single element grow β-Ga2O3 nanowires in the area containing Au nanoparticles, and the area without Au nanoparticles is still the p-Si substrate. The growth temperature is regulated by controlling the distance between the p-Si and Ga raw materials in the tubular furnace. Different distances lead to different growth temperatures, and the material morphology formed is also different.

[0010] Electrodes are respectively fabricated on the surface of the β-Ga2O3 nanowire and the surface of the p-Si substrate without nanowire growth to obtain a β-Ga2O3 nanowire / p-Si heterojunction photodetector.

[0011] By controlling the distribution of Au nanoparticles, areas containing Au nanoparticles and areas without Au nanoparticles are simultaneously formed on the surface of the p-Si substrate. Then, the growth temperature is regulated by controlling the distance between the p-Si and Ga raw materials in the tube furnace. After the material growth, the areas containing Au nanoparticles grow β-Ga2O3 nanowire materials, while the areas without Au nanoparticles remain p-Si. Finally, electrodes are made on the surfaces of p-Si and β-Ga2O3 nanowires respectively to form a heterojunction photodetector with a type II energy band structure, thereby improving the separation efficiency of electron-hole pairs and improving the photoelectric performance.

[0012] In a preferred embodiment of the present invention, the distance between the p-Si substrate and the Ga element in the tube furnace is 8 cm to 9 cm.

[0013] In a preferred embodiment of the present invention, the heating temperature of the tube furnace is 850°C to 950°C.

[0014] In a preferred embodiment of the present invention, the heating time of the tube furnace is 30 min to 60 min.

[0015] In a preferred embodiment of the present invention, the evaporation time is 20 s to 40 s.

[0016] In a preferred embodiment of the present invention, the annealing temperature is 600° C. to 800° C., and the annealing time is 20 min to 40 min.

[0017] In a preferred embodiment of the present invention, the method for making silver electrodes on the surface of β-Ga2O3 nanowires and the surface of a p-Si substrate without nanowire growth is to first make circular silver paste on the surface of β-Ga2O3 nanowires and the surface of a p-Si substrate without nanowire growth, and then keep it at 50°C to 70°C for 0.5h to 1h to evaporate the water in the silver paste to form a silver electrode.

[0018] Another object of the present invention is to provide a β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared by any of the preparation methods described above.

[0019] In a preferred embodiment of the present invention, Au nanoparticles are only used as a catalyst for the growth material, and the content is extremely low and does not appear in the device. Electrodes are also made on the surface of the p-Si substrate and belong to the same layer as the nanowires. Therefore, the heterojunction photodetector includes, from bottom to top, a p-Si substrate, β-Ga2O3 nanowires and an Ag electrode on the surface of the p-Si substrate, and an Ag electrode on the surface of the β-Ga2O3 nanowires.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. The present invention controls the distribution of Au nanoparticles to simultaneously form an area containing Au nanoparticles and an area without Au nanoparticles on the surface of a p-Si substrate, and then controls the growth temperature by controlling the distance between p-Si and Ga raw materials in a tube furnace. After the material growth, the area containing Au nanoparticles grows β-Ga2O3 nanowire materials, while the area without Au nanoparticles remains p-Si. Finally, electrodes are made on the surfaces of p-Si and β-Ga2O3 nanowires to form a heterojunction photodetector with a type II energy band structure, thereby improving the separation efficiency of electron-hole pairs and improving photoelectric performance. The device structure prepared by the present invention makes electrodes on the p-Si substrate and the β-Ga2O3 nanowire surface respectively, the method is relatively simple, the technical requirements and cost are low, and the light capture effect of the nanowire network and the carrier separation effect of the type II energy band heterojunction can be brought into play, which is conducive to improving the photoelectric performance.

[0022] 2. The preparation method of the β-Ga2O3 nanowire / p-Si heterojunction photodetector provided by the present invention provides a way to combine a one-dimensional nanowire with a two-dimensional substrate to make a heterojunction photodetector, simplifies the preparation process of the nanowire photodetector, and obtains excellent photoelectric performance. According to experimental tests, the prepared β-Ga2O3 nanowire / p-Si heterojunction photodetector obtained an optical switching ratio of 5309 and a power consumption of 3.93×10 12Jones specific detectivity, 30 / 20ms response / decay time, etc. In addition, at zero bias and 580μW / cm 2 Under 254nm light, the photocurrent of the device is significantly improved by two orders of magnitude compared to the dark current.

[0023] 3. The preparation method of the present invention has the advantages of high material quality and output, simple device preparation method and low cost, which will promote the practical application of β-Ga2O3 nanowire-based solar-blind ultraviolet photodetectors. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 SEM images of the substrate area with and without Au nanoparticles after the growth of β-Ga2O3 nanowires.

[0025] Figure 2 (a) High-magnification SEM image, (b) EDS mapping image, (c) XRD spectrum, and (d) Raman image of the β-Ga2O3 nanowires prepared in the present invention.

[0026] Figure 3 Schematic diagram of the β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared by the present invention.

[0027] Figure 4 Linear coordinate (a) and logarithmic coordinate (b) IV curve of the β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared in the present invention, (c) It curve under 20V bias, (d) photoelectric performance parameter curve, (e) response / decay time under 20V bias, and (f) It curve under 0V bias. DETAILED DESCRIPTION

[0028] The following is a detailed description of the technical solutions in the embodiments of the present invention in combination with the preferred embodiments and the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] It should be noted that all professional terms used in the present invention are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention. Unless otherwise specifically stated, various raw materials, reagents, instruments and equipment used in the following embodiments of the present invention can be purchased from the market or prepared by existing methods.

[0030] The present invention aims at the problem that most of the existing nanowire photoelectric detectors are single nanowire devices, and the preparation method thereof is to disperse the nanowires and then make electrodes at both ends of the single nanowires, the preparation process is relatively complex, the technical requirements are high, and the photoelectric performance is low. Therefore, a β-Ga2O3 nanowire / p-Si heterojunction photoelectric detector and a preparation method thereof are provided, which include the following steps: placing Au particles and a p-Si substrate in an evaporator for evaporation, forming an area containing an Au film and an area not containing an Au film on the surface of the p-Si substrate, and in the preparation process for evaporation, fixing the p-Si substrate on the sample stage of the evaporator with a heat-resistant glue, the evaporated Au particles form a film on the substrate surface, and the substrate area covered by the heat-resistant glue has no Au film, which provides convenience for the subsequent preparation of electrodes on the p-Si surface; annealing the p-Si substrate after evaporation to melt the Au film into a mass Au nanoparticles are aggregated to simultaneously form regions containing Au nanoparticles and regions without Au nanoparticles on the surface of a p-Si substrate; Ga single substance raw materials and the p-Si substrate containing Au nanoparticles are placed in a closed tubular furnace, air is introduced, and heating is performed, so that Ga single substance and the annealed p-Si substrate are placed in a closed tubular furnace, air is introduced to provide an O source, and heating is performed, so that Ga single substance grows β-Ga2O3 nanowires in the region containing Au nanoparticles, and the region without Au nanoparticles is still a p-Si substrate, and the growth temperature is regulated by controlling the distance between the p-Si and Ga raw materials in the tubular furnace, because different distances lead to different growth temperatures, and the formed material morphology is also different; electrodes are respectively made on the surface of the β-Ga2O3 nanowire and the surface of the p-Si substrate without nanowire growth to obtain a β-Ga2O3 nanowire / p-Si heterojunction photodetector. The preparation method of the present invention provides a way to combine one-dimensional nanowires and two-dimensional substrates to make heterojunction photodetectors, simplifies the preparation process of nanowire photodetectors, and obtains excellent photoelectric performance. The experimental test results show that the β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared by the present invention obtains an optical switching ratio of 5309 and a power consumption of 3.93×10 12 Jones specific detectivity, 30 / 20ms response / decay time, and at zero bias and 580μW / cm 2 Under 254nm light, the photocurrent of the device is significantly improved by two orders of magnitude compared to the dark current.

[0031] Example 1

[0032] A method for preparing a β-Ga2O3 nanowire / p-Si heterojunction photoelectric detector comprises the following steps:

[0033] (1) Using a diamond pen, the p-Si substrate was cut into small pieces of 10 mm×5 mm. The substrate cut in step (1) was ultrasonically cleaned for 10 min using acetone, deionized water and ethanol respectively, and then the cleaned substrate was blown dry using nitrogen.

[0034] (2) 20 mg of Au particles with a purity of 99.999% were placed in a tungsten boat of an evaporation deposition apparatus, and the p-Si substrate cleaned in step (2) was fixed on the sample stage of the instrument using heat-resistant glue. An Au film was formed on the substrate by evaporation for 30 seconds. There was no Au film in the substrate area covered by the heat-resistant glue.

[0035] (3) placing the p-Si substrate after the vapor deposition in step (3) into a vacuum annealing furnace and heating it to 700° C. and maintaining it for 30 minutes for annealing treatment, so that the Au nanofilm melts and aggregates into Au nanoparticles with distinct particles at high temperature, and no Au nanoparticles are generated in the substrate area covered by the heat-resistant glue.

[0036] (4) Remove the heat-resistant glue on the surface of the p-Si substrate, and place 20 mg of Ga simple substance with a purity of 99.999% at the bottom of a single-opening fine quartz tube with an inner diameter of 10 mm and a length of 15 cm, and keep one side of the p-Si substrate containing Au nanoparticles after the treatment in step (4) flat with the Ga raw material at a distance of 8.5 cm; place the fine quartz tube in a large quartz tube of a single-temperature zone tubular furnace, so that the Ga simple substance raw material at the bottom of the fine quartz tube is located at the center of the single-temperature zone tubular furnace, and the opening direction of the fine quartz tube is toward the ventilation side so that the raw material and the introduced gas can maintain sufficient contact during the growth of the material.

[0037] (5) After closing the tube furnace, evacuate the tube furnace, and continuously introduce 80 sccm of air during the material growth process, using oxygen in the air as the O source, then heat the tube furnace to 900° C. and maintain it for 60 min. After the material growth is completed, cool it to room temperature to obtain β-Ga2O3 nanowires. No material grows in the substrate area covered by the heat-resistant glue in step (3).

[0038] (6) In step (7), the surface of the β-Ga2O3 nanowires and the surface of the p-Si substrate without nanowire growth are respectively prepared with an area of ​​1 mm 2 The prepared sample was placed in an oven set to 60°C for 0.5h to evaporate the water in the silver paste to form a silver electrode, thereby obtaining a β-Ga2O3 nanowire / p-Si heterojunction photodetector.

[0039] Example 2

[0040] A method for preparing a β-Ga2O3 nanowire / p-Si heterojunction photoelectric detector comprises the following steps:

[0041] (1) Using a diamond pen, the p-Si substrate was cut into small pieces of 10 mm×5 mm. The substrate cut in step (1) was ultrasonically cleaned for 10 min using acetone, deionized water and ethanol respectively, and then the cleaned substrate was blown dry using nitrogen.

[0042] (2) 20 mg of Au particles with a purity of 99.999% were placed in a tungsten boat of an evaporation deposition apparatus, and the p-Si substrate cleaned in step (2) was fixed on the sample stage of the instrument using heat-resistant glue. An Au film was formed on the substrate by evaporation for 20 seconds. There was no Au film in the substrate area covered by the heat-resistant glue.

[0043] (3) placing the p-Si substrate after the vapor deposition in step (3) into a vacuum annealing furnace and heating it to 600° C. and maintaining it for 20 minutes for annealing treatment, so that the Au nanofilm melts and aggregates into Au nanoparticles with distinct particles at high temperature, and no Au nanoparticles are generated in the substrate area covered by the heat-resistant glue.

[0044] (4) Remove the heat-resistant glue on the surface of the p-Si substrate, place 20 mg of Ga single substance with a purity of 99.999% at the bottom of a single-opening fine quartz tube with an inner diameter of 10 mm and a length of 15 cm, and keep one side of the p-Si substrate containing Au nanoparticles after the treatment in step (4) flat with the Ga raw material at a distance of 8 cm; place the fine quartz tube in a large quartz tube of a single-temperature zone tubular furnace, so that the Ga single substance raw material at the bottom of the fine quartz tube is located at the center of the single-temperature zone tubular furnace, and the opening direction of the fine quartz tube is toward the ventilation side so that the raw material and the introduced gas can maintain sufficient contact during the growth of the material.

[0045] (5) After closing the tube furnace, evacuate the tube furnace, and continuously introduce 80 sccm of air during the material growth process, using oxygen in the air as the O source, then heat the tube furnace to 8500° C. and maintain it for 30 min. After the material growth is completed, cool it to room temperature to obtain β-Ga2O3 nanowires. No material grows in the substrate area covered by the heat-resistant glue in step (3).

[0046] (6) In step (7), the surface of the β-Ga2O3 nanowires and the surface of the p-Si substrate without nanowire growth are respectively prepared with an area of ​​1 mm 2 The prepared sample was placed in an oven at 50°C for 1 hour to evaporate the water in the silver paste to form a silver electrode, thereby obtaining a β-Ga2O3 nanowire / p-Si heterojunction photodetector.

[0047] Example 3

[0048] A method for preparing a β-Ga2O3 nanowire / p-Si heterojunction photoelectric detector comprises the following steps:

[0049] (1) Using a diamond pen, the p-Si substrate was cut into small pieces of 10 mm×5 mm. The substrate cut in step (1) was ultrasonically cleaned for 10 min using acetone, deionized water and ethanol respectively, and then the cleaned substrate was blown dry using nitrogen.

[0050] (2) 20 mg of Au particles with a purity of 99.999% were placed in a tungsten boat of an evaporation deposition apparatus, and the p-Si substrate cleaned in step (2) was fixed on the sample stage of the instrument using heat-resistant glue. An Au film was formed on the substrate by evaporation for 40 seconds. There was no Au film in the substrate area covered by the heat-resistant glue.

[0051] (3) placing the p-Si substrate after the vapor deposition in step (3) into a vacuum annealing furnace and heating it to 800° C. and maintaining it for 40 minutes for annealing treatment, so that the Au nanofilm melts and aggregates into Au nanoparticles with distinct particles at high temperature, and no Au nanoparticles are generated in the substrate area covered by the heat-resistant glue.

[0052] (4) Remove the heat-resistant glue on the surface of the p-Si substrate, and place 20 mg of Ga single substance with a purity of 99.999% at the bottom of a single-opening fine quartz tube with an inner diameter of 10 mm and a length of 15 cm. Keep one side of the p-Si substrate containing Au nanoparticles after the treatment in step (4) flat with the Ga raw material at a distance of 9 cm; place the fine quartz tube in a large quartz tube of a single-temperature zone tubular furnace, so that the Ga single substance raw material at the bottom of the fine quartz tube is located at the center of the single-temperature zone tubular furnace, and the opening direction of the fine quartz tube is toward the ventilation side so that the raw material and the introduced gas can maintain full contact during the growth of the material.

[0053] (5) After closing the tube furnace, evacuate the tube furnace, and continuously introduce 80 sccm of air during the material growth process, using oxygen in the air as the O source, then heat the tube furnace to 950° C. and maintain it for 45 min. After the material growth is completed, cool it to room temperature to obtain β-Ga2O3 nanowires. No material grows in the substrate area covered by the heat-resistant glue in step (3).

[0054] (6) In step (7), the surface of the β-Ga2O3 nanowires and the surface of the p-Si substrate without nanowire growth are respectively prepared with an area of ​​1 mm 2 The prepared sample was placed in an oven at 70°C for 0.8 h to evaporate the water in the silver paste to form a silver electrode, thereby obtaining a β-Ga2O3 nanowire / p-Si heterojunction photodetector.

[0055] Results Analysis

[0056] Figure 1The SEM images of the substrate areas with and without Au nanoparticles after the growth of β-Ga2O3 nanowires show that nanowires grow in the substrate area with Au nanoparticles, while no material grows in the substrate area without Au nanoparticles, which facilitates the subsequent fabrication of electrodes on the surfaces of both.

[0057] Figure 2 (a) high-magnification SEM image, (b) EDS mapping image, (c) XRD spectrum, and (d) Raman image of the β-Ga2O3 nanowires prepared in the present invention. It can be seen that the material prepared in the present invention is a high-quality β-Ga2O3 nanowire.

[0058] Figure 3 The schematic diagram of the β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared by the present invention, wherein the heterojunction photodetector comprises, from bottom to top, a p-Si substrate, a β-Ga2O3 nanowire and an Ag electrode on the surface of the p-Si substrate, and an Ag electrode on the surface of the β-Ga2O3 nanowire. Figure 4 The linear coordinate (a) and logarithmic coordinate (b) IV curve of the β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared by the present invention, (c) It curve under 20V bias, (d) photoelectric performance parameter curve, (e) response / decay time under 20V bias, and (f) It curve under 0V bias. It can be seen that the device prepared by the present invention produces excellent photoelectric performance under 254nm day-blind ultraviolet irradiation.

[0059] In summary, the preparation method of the β-Ga2O3 nanowire / p-Si heterojunction photodetector provided by the present invention provides a way to combine a one-dimensional nanowire with a two-dimensional substrate to make a heterojunction photodetector, simplifies the preparation process of the nanowire photodetector, and obtains excellent photoelectric performance. According to experimental tests, the prepared β-Ga2O3 nanowire / p-Si heterojunction photodetector obtained an optical switching ratio of 5309 and a power consumption of 3.93×10 12 Jones specific detectivity, 30 / 20ms response / decay time, etc. In addition, at zero bias and 580μW / cm 2 Under 254nm light, the photocurrent of the device is significantly improved by two orders of magnitude compared to the dark current.

[0060] It should be noted that when the present invention involves a numerical range, it should be understood that the two endpoints of each numerical range and any value between the two endpoints can be selected. Since the steps and methods used are the same as those in the embodiments, in order to avoid redundancy, the present invention describes a preferred embodiment. Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they know the basic creative concept. Therefore, the attached claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0061] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A method for preparing a β-Ga2O3 nanowire / p-Si heterojunction photodetector, characterized in that: The following steps are involved: The Au particles and the p-Si substrate are evaporated to form an area containing an Au thin film and an area not containing an Au thin film on the surface of the p-Si substrate; Annealing the p-Si substrate after evaporation to melt and aggregate the Au film into Au nanoparticles, and forming an area containing Au nanoparticles and an area not containing Au nanoparticles on the surface of the p-Si substrate; Placing Ga single substance and annealed p-Si substrate in a tube furnace and heating them under oxygen flow conditions, so that Ga single substance grows β-Ga2O3 nanowires in the area containing Au nanoparticles, and no nanowires grow in the area without Au nanoparticles; Electrodes are respectively fabricated on the surface of the β-Ga2O3 nanowire and the surface of the p-Si substrate without nanowire growth to obtain a β-Ga2O3 nanowire / p-Si heterojunction photodetector.

2. The method for preparing the β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 1, characterized in that: The distance between the p-Si substrate and the Ga element in the tube furnace is 8 cm to 9 cm.

3. The method for preparing the β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 1, characterized in that: The heating temperature of the tubular furnace is 850℃~950℃.

4. The method for preparing the β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 1, characterized in that: The heating time of the tubular furnace is 30min to 60min.

5. The method for preparing the β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 1, characterized in that: The evaporation time is 20s to 40s.

6. The method for preparing the β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 1, characterized in that: The annealing treatment temperature is 600° C. to 800° C., and the annealing time is 20 min to 40 min.

7. The method for preparing the β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 1, characterized in that: The method for making electrodes on the surface of β-Ga2O3 nanowires and the surface of p-Si substrate without nanowire growth is as follows: first, circular silver paste is made on the surface of β-Ga2O3 nanowires and the surface of p-Si substrate without nanowire growth, and then the water in the silver paste is evaporated at 50℃~70℃ for 0.5h~1h to form a silver electrode.

8. A β-Ga2O3 nanowire / p-Si heterojunction photodetector prepared by the preparation method according to any one of claims 1 to 7.

9. The β-Ga2O3 nanowire / p-Si heterojunction photodetector according to claim 8, characterized in that: The heterojunction photodetector comprises, from bottom to top, a p-Si substrate, a β-Ga2O3 nanowire, an Ag electrode on the surface of the p-Si substrate, and an Ag electrode on the surface of the β-Ga2O3 nanowire.

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