Adhesive containing polyether-modified siloxane

Abstract

Provided are: an adhesive which has excellent spin coating properties on a circuit surface of a wafer and on a support (support substrate), has excellent heat resistance when the circuit surface of the wafer and the support are bonded via an adhesive layer, and when the back surface of the wafer is processed, and which has excellent heat resistance when the circuit surface of the wafer and the support are bonded via the adhesive layer; a wafer can be easily separated from a support body after wafer processing (for example, after grinding of the back surface of the wafer). An adhesive for processing the back surface of a wafer, said adhesive being peelably adhered between a support and the circuit surface of the wafer, said adhesive containing a component (A) that is cured by a hydrosilylation reaction and a component (B) that contains a polyether-modified siloxane.

Description

Technical Field

[0001] The present invention relates to an adhesive for fixing a wafer to a support body when grinding the back side of the wafer, a laminated body using the adhesive, and a method for producing and peeling the laminated body. Background Art

[0002] With regard to semiconductor wafers that were previously integrated in a two-dimensional plane direction, a semiconductor integration technology that further integrates (stacks) the plane in a three-dimensional direction is pursued for the purpose of further integration. This three-dimensional stacking is a technology that integrates into multiple layers while wiring through silicon vias (TSV). When integrating into multiple layers, the side opposite to the circuit surface formed (i.e., the back side) of each wafer to be integrated is thinned by grinding, and the thinned semiconductor wafers are stacked.

[0003] The semiconductor wafer before thinning (also referred to as wafer here) is bonded to a support body in order to be ground using a grinding device. The bonding at this time must be easy to peel off the semiconductor wafer after grinding, so it is called temporary bonding. The temporary bonding must be easy to disassemble from the support body. When a large force is applied to the disassembly, the thinned semiconductor wafer is sometimes cut or deformed. In order to avoid such a situation, it is easy to disassemble. However, when the back side of the semiconductor wafer is ground, it is detached or offset due to the grinding stress, which is also not preferred. Therefore, the performance pursued by temporary bonding is: to withstand the stress during grinding and to be easy to disassemble after grinding.

[0004] For example, the following properties are sought: high stress (strong adhesive force) with respect to the planar direction during polishing, and low stress (weak adhesive force) with respect to the longitudinal direction during removal.

[0005] As such bonding processes, the following methods are disclosed: a method having an adhesive layer and a separation layer, wherein the separation layer is formed by plasma polymerization of dimethylsiloxane and mechanically separated after grinding (see Patent Documents 1 and 2); a method in which a supporting substrate and a semiconductor wafer are bonded using an adhesive composition, the back side of the semiconductor wafer is ground, and then the adhesive is removed using an etching solution (see Patent Document 3); and as an adhesive layer for bonding a supporting body to a semiconductor wafer, the following chip processing body is disclosed, which chip processing body comprises: a combination of a polymerized layer formed by polymerizing an alkenyl-containing polyorganosiloxane and a hydrosilyl-containing polyorganosiloxane using a platinum catalyst and a polymerized layer formed by a thermosetting polysiloxane (see Patent Documents 4, 5, 6, and 7).

[0006] With the further development in the semiconductor field in recent years, new developments related to adhesive components have been pursued.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application No. 2012-510715

[0010] Patent Document 2: Japanese Patent Application No. 2012-513684

[0011] Patent Document 3: Japanese Patent Application No. 2008-532313

[0012] Patent Document 4: Japanese Patent Application Publication No. 2013-179135

[0013] Patent Document 5: Japanese Patent Application Publication No. 2013-232459

[0014] Patent Document 6: Japanese Patent Application Publication No. 2006-508540

[0015] Patent Document 7: Japanese Patent Application Publication No. 2009-528688 Summary of the invention

[0016] Problems to be solved by the invention

[0017] The object of the present invention is to provide an adhesive and a laminate having the adhesive, wherein the adhesive has excellent spin coating properties on the circuit surface of a chip and a support body (support substrate), has excellent heat resistance when joining the circuit surface of the chip and the support body via an adhesive layer and when processing the back side of the chip, and can easily peel off the chip and the support body after the chip is processed (for example, after grinding the back side of the chip).

[0018] Another object of the present invention is to provide a method for producing and a method for peeling the laminate.

[0019] Solutions for solving problems

[0020] The present inventors have conducted intensive studies to solve the above problems, and as a result, have found that the above problems can be solved, and have completed the present invention having the following gist.

[0021] That is, the present invention includes the following contents.

[0022] [1] An adhesive that is releasably bonded between a support and a circuit surface of a wafer and is used for processing the back surface of the wafer, the adhesive comprising: a component (A) that cures by a hydrosilylation reaction and a component (B) that comprises a polyether-modified siloxane.

[0023] [2] The adhesive according to [1], wherein the component (A) comprises a polysiloxane (A1) and a platinum group metal catalyst (A2), the polysiloxane (A1) comprises a polyorganosiloxane (a1) and a polyorganosiloxane (a2), the polyorganosiloxane (a1) comprises a polysiloxane comprising a siloxane unit (Q unit) selected from the group consisting of SiO2, R 1 R 2 R 3 SiO 1 / 2 The siloxane unit (M unit), R 4 R 5 SiO 2 / 2 The siloxane units (D units) and R 6 SiO 3 / 2 At least one unit (the R 1 To R 6 Each independently represents an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms, and is bonded to a silicon atom via a Si—C bond, and the polysiloxane comprises an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms), the polyorganosiloxane (a2) comprises a polysiloxane comprising a siloxane unit (Q unit) selected from the group consisting of a siloxane unit represented by SiO2, an R 1 R 2 R 3 SiO 1 / 2 The siloxane unit (M unit), R 4 R 5 SiO 2 / 2 The siloxane units (D units) and R 6 SiO 3 / 2 At least one unit (the R 1 To R 6 Each independently represents an alkyl group having 1 to 10 carbon atoms or a hydrogen atom, and is bonded to a silicon atom via a Si—C bond or a Si—H bond, and the polysiloxane contains an alkyl group having 1 to 10 carbon atoms and a Si—H group).

[0024] [3] The adhesive according to [1] or [2], wherein the component (B) comprises a polyether-modified siloxane having a group represented by the following formula (B-1) or a polyether-modified siloxane represented by the following formula (B-2).

[0025]

[0026] (In formula (B-1), R represents a group containing a poly(oxyethylene) group and / or a poly(oxypropylene) group. n and m each represent an integer.)

[0027]

[0028] (In formula (B-2), n, x, and y each represent an integer.)

[0029] [4] The adhesive according to [3], wherein in the formula (B-1), the group represented by R is a poly(oxyethylene) group, a poly(oxypropylene) group, or a group represented by the following formula (B-1-1).

[0030]

[0031] (In formula (B-1-1), A represents H or CH3. * represents a bond. a and b each represent an integer greater than or equal to 0, and a+b is an integer greater than or equal to 1.)

[0032] [5] The adhesive according to any one of [1] to [4], wherein the processing is backside grinding of the wafer.

[0033] [6] A laminate comprising: a first substrate; a second substrate; and an adhesive layer provided between the first substrate and the second substrate, wherein the adhesive layer is formed of the adhesive according to any one of [1] to [5].

[0034] [7] A method for manufacturing a laminate, wherein an adhesive as described in any one of [1] to [5] is coated on a first substrate to form a coating film, a second substrate is arranged on the side of the coating film opposite to the first substrate, and the coating film is heated in a state where the first substrate and the coating film are in contact with each other and the coating film and the second substrate are in contact with each other, thereby forming a laminate in which the first substrate and the second substrate are bonded together via an adhesive layer.

[0035] [8] The method for manufacturing a laminate according to [7], wherein the first substrate is a support, the second substrate is a wafer, and a circuit surface of the wafer faces the first substrate.

[0036] [9] The method for manufacturing a laminate according to [7], wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.

[0037]

[10] A method for peeling a laminated body, wherein an adhesive as described in any one of [1] to [4] is coated on a first substrate to form a coating film, a second substrate is arranged on the side of the coating film opposite to the first substrate, and the coating film is heated in a state where the first substrate and the coating film are in contact with each other and the coating film and the second substrate are in contact with each other, thereby forming a laminated body in which the first substrate and the second substrate are bonded via an adhesive layer, and after the laminated body is formed, the laminated body is processed and then the first substrate and the second substrate are peeled off.

[0038]

[11] A method for peeling a laminated body, wherein the adhesive as described in [5] is coated on a first substrate to form a coating film, a second substrate is arranged on the side of the coating film opposite to the first substrate, and the first substrate and the coating film are heated in a state where they are bonded to each other in such a manner that the first substrate and the coating film are in contact with each other and the coating film and the second substrate are in contact with each other, thereby forming a laminated body in which the first substrate and the second substrate are bonded to each other via an adhesive layer, and after the laminated body is formed, the laminated body is processed and then the first substrate and the second substrate are peeled off.

[0039]

[12] The method for peeling a laminate according to

[10] , wherein the first substrate is a support, the second substrate is a wafer, and a circuit surface of the wafer faces the first substrate.

[0040]

[13] The method for peeling a laminate according to

[11] , wherein the first substrate is a support, the second substrate is a wafer, and a circuit surface of the wafer faces the first substrate.

[0041]

[14] The method for peeling a laminate according to

[10] , wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.

[0042]

[15] The method for peeling a laminate according to

[11] , wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.

[0043]

[16] The method for peeling a stacked body according to any one of

[10] ,

[12] and

[14] , wherein the processing is backside grinding of the wafer.

[0044] Effects of the Invention

[0045] According to the present invention, an adhesive and a laminate having the adhesive can be provided, wherein the adhesive has excellent spin coating properties on the circuit surface of a chip and a support body (support substrate), has excellent heat resistance when joining the circuit surface of the chip and the support body via an adhesive layer and when processing the back side of the chip, and can easily be peeled off the chip and the support body after the chip is processed (for example, after grinding the back side of the chip).

[0046] Furthermore, according to the present invention, a method for producing and a method for peeling the laminate can be provided. DETAILED DESCRIPTION

[0047] (Adhesive)

[0048] The adhesive of the present invention is used to releasably bond a support body and a circuit surface of a wafer, and is used to process the back surface of a wafer. It can be suitably used to form an adhesive layer for temporary bonding in order to process a semiconductor wafer.

[0049] The adhesive of the present invention comprises a component (A) that cures by a hydrosilylation reaction and a component (B) that comprises a polyether-modified silicone.

[0050] By making the adhesive contain a specific polysiloxane (corresponding to component (B)), the adhesive of the present invention also has excellent heat resistance when joining the circuit surface of the chip and the support body through the adhesive layer and during high-temperature processing, as shown in the following embodiments, and the chip and the support body can be easily peeled off.

[0051] In the present invention, the support body and the wafer are temporarily bonded together by an adhesive, and the back surface of the wafer opposite to the circuit surface is processed by grinding or the like, so that the thickness of the wafer can be reduced.

[0052] The temporary bonding is performed during the grinding of the back side of the wafer, and the support body and the thinned wafer can be separated after the grinding of the back side of the wafer.

[0053] Here, peelable means that the peeling strength is lower than that of other peeling parts and the peeling is easy.

[0054] In the present invention, the adhesive layer (temporary adhesive layer) is formed of the adhesive of the present invention. The adhesive comprises the above-mentioned component (A) and the above-mentioned component (B), and may further comprise other additives.

[0055] <Component (A) Cured by Hydrosilylation Reaction>

[0056] The component (A) comprises a polysiloxane (A1) and a platinum group metal catalyst (A2), wherein the polysiloxane (A1) comprises a polyorganosiloxane (a1) and a polyorganosiloxane (a2), wherein the polyorganosiloxane (a1) comprises a polysiloxane comprising a siloxane unit (Q unit) selected from the group consisting of SiO2, R 1R 2 R 3 SiO 1 / 2 The siloxane unit (M unit), R 4 R 5 SiO 2 / 2 The siloxane units (D units) and R 6 SiO 3 / 2 At least one unit (R 1 To R 6 Each independently represents an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms, and is bonded to a silicon atom via a Si—C bond, and the polysiloxane comprises an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms), the polyorganosiloxane (a2) comprises a polysiloxane comprising a siloxane unit (Q unit) selected from the group consisting of a siloxane unit represented by SiO2, an R 1 R 2 R 3 SiO 1 / 2 The siloxane unit (M unit), R 4 R 5 SiO 2 / 2 The siloxane units (D units) and R 6 SiO 3 / 2 At least one unit (R 1 To R 6 Each independently represents an alkyl group having 1 to 10 carbon atoms or a hydrogen atom, and is bonded to a silicon atom via a Si—C bond or a Si—H bond, and the polysiloxane contains an alkyl group having 1 to 10 carbon atoms and a Si—H group).

[0057] The polysiloxane (A1) includes a polyorganosiloxane (a1) and a polyorganosiloxane (a2). The polyorganosiloxane (a1) includes an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms, and the polyorganosiloxane (a2) includes an alkyl group having 1 to 10 carbon atoms and a hydrogen atom. The alkenyl group and the Si—H group form a crosslinked structure by a hydrosilylation reaction using a platinum metal catalyst (A2) and are cured.

[0058] The polyorganosiloxane (a1) can be composed of a combination selected from Q units, M units, D units, and T units, for example, a combination of (Q units and M units) and (D units and M units), a combination of (T units and M units) and (D units and M units), a combination of (Q units, T units, and M units) and (T units and M units), a combination of (T units and M units), and a combination of (Q units and M units).

[0059] The polyorganosiloxane (a2) may be composed of a combination selected from Q units, M units, D units, and T units, for example, a combination of (M units and D units), a combination of (Q units and M units), and a combination of (Q units, T units, and M units).

[0060] Examples of the alkenyl group having 2 to 10 carbon atoms include vinyl, 1-propenyl, 2-propenyl, 1-methyl-1-vinyl, 1-butenyl, 2-butenyl, 3-butenyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-ethylvinyl, 1-methyl-1-propenyl, 1-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1-n-propylvinyl, 1-methyl-1-butenyl, 1-methyl-2-butenyl, 1-methyl-3-butenyl, 2-ethyl-2-propenyl, 2-methyl-1-butenyl, 2-methyl-2-butenyl, 2-methyl-3-butenyl, 3-methyl-1-butenyl, 3-methyl-2-butenyl, 3 ...2-butenyl, 3-methyl-3-butenyl, 3-methyl-1-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-2-butenyl, 3-methyl-1-butenyl, 3-methyl-2-butenyl, 3-methyl-2- 1-butylene, 2-methyl-1-pentenyl, 2-methyl-2-pentenyl, 2-methyl-3-pentenyl, 2-methyl-4-pentenyl, 2-n-propyl-2-propenyl, 3-methyl-1-pentenyl, 3-methyl-2-pentenyl, 3-methyl-3-pentenyl, 3-methyl-4-pentenyl, 1-n-butylene, 2-methyl-1-pentenyl, 2-methyl-2-pentenyl, 2-methyl-3-pentenyl, 2-methyl-4-pentenyl, 2-n-propyl-2-propenyl, 3-methyl-1-pentenyl, 3-methyl-2-pentenyl, 3-methyl-3-pentenyl, 3-methyl-4-pentenyl, 4-Methyl-2-pentenyl, 3-ethyl-3-butenyl, 4-methyl-1-pentenyl, 4-methyl-2-pentenyl, 4-methyl-3-pentenyl, 4-methyl-4-pentenyl, 1,1-dipentenylmethyl-2-butenyl, 1,1-dimethyl-3-butenyl, 1,2-dimethyl-1-butenyl, 1,2-dimethyl-2-butenyl, 1,2-dimethyl-3-butenyl, 1-methyl-2-ethyl-2-propenyl, 1-sec-butylvinyl, 1,3-dimethyl-1-butenyl, 1,3-dimethyl-2-butenyl, 1,3-dimethyl-3-butenyl, 1-isobutylvinyl, 2,2-dimethyl-3-butenyl, 2,3-dimethyl-1-butenyl, 2,3-dimethyl-2-butenyl, 2,3-dimethyl-3-butenyl, 2-isopropyl-2-propenyl, 3,3-dimethyl-1-butenyl, 1-ethyl-1-butenyl, 1-ethyl-2-butenyl, 1-ethyl-3-butenyl, 1-n-propyl-1-propenyl, 1-n-propyl-2-propenyl, 2-ethyl-1-butenyl, 2-ethyl-2-butenyl, 2-ethyl-3-butenyl, 1,1,2-trimethyl-2-propenyl, 1-tert-butylvinyl, 1-methyl-1-ethyl-2-propenyl, 1-ethyl-2-methyl-1-propenyl, 1-ethyl-2-methyl-2-propenyl, 1-isopropyl-1-propenyl and 1-isopropyl-2-propenyl.In particular, ethenyl (vinyl) and 2-propenyl (allyl) can be preferably used.

[0061] The alkyl group having 1 to 10 carbon atoms includes, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3-methyl-n-butyl, 1,1-dimethyl-n-propyl, 1,2-dimethyl-n-propyl, 2,2-dimethyl-n-propyl, 1-ethyl-n-propyl, n-hexyl, 1-methyl-n-pentyl, 2-methyl-n-pentyl, 3-methyl-n-pentyl The invention also includes methyl, 1,1-dimethyl-n-butyl, 1,2-dimethyl-n-butyl, 1,3-dimethyl-n-butyl, 2,2-dimethyl-n-butyl, 2,3-dimethyl-n-butyl, 3,3-dimethyl-n-butyl, 1-ethyl-n-butyl, 2-ethyl-n-butyl, 1,1,2-trimethyl-n-propyl, 1,2,2-trimethyl-n-propyl, 1-ethyl-1-methyl-n-propyl and 1-ethyl-2-methyl-n-propyl. Methyl can be particularly preferably used.

[0062] The polyorganosiloxane (a1) is composed of an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms, wherein the alkyl group having 1 to 10 carbon atoms is a methyl group, and the alkenyl group having 2 to 10 carbon atoms is an ethenyl group or a vinyl group. 1 ~R 6 The total amount of all substituents shown can be 0.1 mol% to 50.0 mol%, preferably 0.5 mol% to 30.0 mol%, and the remaining R 1 ~R 6 An alkyl group may be used.

[0063] In addition, the polyorganosiloxane (a2) is composed of an alkyl group having 1 to 10 carbon atoms and a hydrogen atom, wherein the alkyl group having 1 to 10 carbon atoms is a methyl group and the hydrogen atom forms a Si—H structure. 1 ~R 6 The total amount of all substituents shown can be 0.1 mol% to 50.0 mol%, preferably 10.0 mol% to 40.0 mol%, and the remaining R 1 ~R 6 An alkyl group may be used.

[0064] The polyorganosiloxane (a1) and the polyorganosiloxane (a2) may contain alkenyl groups and hydrogen atoms represented by Si—H groups in a molar ratio of 2.0:1.0, preferably 1.5:1.0.

[0065] The polyorganosiloxane (a1) and the polyorganosiloxane (a2) can be used in a weight average molecular weight range of 500 to 1,000,000 or 5,000 to 50,000, respectively.

[0066] Component (A) contains a platinum group metal catalyst (A2). The platinum metal catalyst is a catalyst for promoting the hydrosilylation addition reaction of alkenyl groups and Si-H groups, and platinum catalysts such as platinum black, platinum tetrachloride, chloroplatinic acid, a reaction product of chloroplatinic acid and a monohydric alcohol, a complex of chloroplatinic acid and olefins, and diacetoacetic platinum can be used. As a complex of platinum and olefins, for example, a complex of divinyltetramethyldisiloxane and platinum can be listed. The amount of the platinum catalyst added can be added in the range of 1.0 to 50.0 ppm relative to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).

[0067] Component (A) may further contain an alkynyl alcohol as an inhibitor (A3) for inhibiting the progress of the hydrosilylation reaction. Examples of the inhibitor include 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propynyl-1-ol. These inhibitors may be added in an amount of 1000.0 to 10000.0 ppm relative to the polyorganosiloxane (a1) and the polyorganosiloxane (a2).

[0068] <Component (B) containing polyether-modified silicone>

[0069] The polyether-modified siloxane used in the component (B) of the present invention may be a polyether-modified siloxane having a group represented by the following formula (B-1) or a polyether-modified siloxane represented by the following formula (B-2).

[0070]

[0071] In formula (B-1), R represents a group containing a poly(oxyethylene) group and / or a poly(oxypropylene) group. n and m each represent an integer.

[0072] In formula (B-1), the arrangement of (OSi(CH3)2) and (OSiRCH3) may be block or random.

[0073]

[0074] In formula (B-2), n, x, and y each represent an integer.

[0075] In the formula (B-1), the group represented by R is preferably a poly(oxyethylene group), a poly(oxypropylene group), or a group represented by the following formula (B-1-1).

[0076]

[0077] In formula (B-1-1), A represents H or CH 3 . * represents a bond. a and b each represent an integer greater than or equal to 0, and a+b is an integer greater than or equal to 1.

[0078] In formula (B-1-1), the structure represented by (C3H6O) may be a straight chain or a branched chain, and the arrangement of (C2H4O) and (C3H6O) may be a block or a random arrangement.

[0079] In formula (B-1), the average oxyethylene chain length per group represented by the polyether substitution site R, i.e., a in formula (B-1-1), is preferably 5 to 100, and the average oxypropylene chain length per group represented by the polyether substitution site R, i.e., b in formula (B-1-1), is preferably 2 to 120.

[0080] In the formula (B-2), the average oxyethylene chain length relative to the methyl group, that is, x+y in the formula (B-2), is preferably 10 to 30.

[0081] As the component (B) containing polyether-modified silicone, commercially available products may be used, and examples thereof include "KP124" manufactured by Shin-Etsu Chemical Co., Ltd. and "L066, L060, L053, DMC6031, DMC6038" manufactured by Wacker Chemie.

[0082] In terms of adhesiveness, the ratio of component (A) to component (B) in the adhesive can be set to any ratio. In order to achieve good peelability, it is desirable to contain 0.3 or more of component (B) by mass %, and in order to maintain the mechanical properties of the adhesive, it is desirable that component (B) is 2 or less by mass %. The ratio of component (A) to component (B) in the adhesive can be set to 100:0.3 to 100:2 by mass %.

[0083] <Other ingredients>

[0084] The adhesive of the present invention may contain a solvent for the purpose of adjusting the viscosity or dissolving the film-constituting components well.

[0085] Specific examples of the solvent include aliphatic hydrocarbons, aromatic hydrocarbons, ketones, etc., but are not limited to these.

[0086] More specifically, as the solvent, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, 5-nonanone, etc. can be used.

[0087] Such solvents may be used alone or in combination of two or more.

[0088] (Laminated body)

[0089] The laminated body of the present invention comprises: a first substrate; a second substrate; and an adhesive layer provided between the first substrate and the second substrate.

[0090] The adhesive layer is a layer formed of the above-mentioned adhesive of the present invention.

[0091] The laminate is used to peel off the first substrate and the second substrate.

[0092] The first substrate may be a support or a wafer. Furthermore, the second substrate may be a support or a wafer. When the first substrate is a support, the second substrate is a wafer. When the first substrate is a wafer, the second substrate is a support.

[0093] As the wafer, for example, there is a silicon wafer having a diameter of 300 mm and a thickness of about 770 μm.

[0094] Examples of the support (carrier) include a glass wafer or a silicon wafer having a diameter of 300 mm and a thickness of about 700 μm.

[0095] The thickness of the adhesive layer is not particularly limited and is generally 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and further preferably 30 μm or more. From the viewpoint of avoiding unevenness caused by a thick film, it is preferably 200 μm or less, more preferably 150 μm or less, further preferably 120 μm or less, and further preferably 70 μm or less.

[0096] Therefore, the thickness of the adhesive layer is, for example, preferably 5 to 500 μm, more preferably 10 to 200 μm, further preferably 20 to 150 μm, further preferably 30 to 120 μm, and particularly preferably 30 to 70 μm.

[0097] (Method for producing laminated body)

[0098] The present invention can include a method for manufacturing a laminate as follows, wherein the above-mentioned adhesive is applied to a first substrate to form a coating film, a second substrate is arranged on the side of the coating film opposite to the first substrate, and the coating film and the second substrate are heated in a state where the first substrate is in contact with the coating film and the coating film is in contact with the second substrate, thereby forming a laminate in which the first substrate and the second substrate are joined via an adhesive layer.

[0099] The adhesive is cured by heating.

[0100] In addition, in this specification, a coating film refers to a coating layer formed of an adhesive.

[0101] The following method of manufacturing a laminated body can be mentioned, wherein the first base is a support body, the second base is a wafer, and the circuit surface of the wafer faces the first base.

[0102] In addition, there can be mentioned a method for producing a laminated body, wherein the first base is a wafer, the second base is a support, and the circuit surface of the wafer faces the second base.

[0103] The adhesive layer is formed by, for example, attaching an adhesive to the first substrate by a spin coater to form a coating film. The first substrate and the second substrate, more specifically, the support and the circuit surface of the wafer are attached in a manner of sandwiching the coating film, and the adhesive is cured by heating to form an adhesive layer. In this way, a laminated body in which the first substrate and the second substrate are bonded via the adhesive layer can be formed.

[0104] The following will be described in more detail.

[0105] For example, an adhesive is attached to the support by a spin coater to form a coating film. The coating film is sandwiched between the support and the circuit surface of the wafer, and the support and the coating film are bonded together so that the support and the coating film are in contact with each other and the coating film and the circuit surface of the wafer are in contact with each other. For example, the adhesive is cured by heating at a temperature of 120 to 260° C. to form an adhesive layer. In this way, a laminated body in which the support and the wafer are bonded via the adhesive layer can be formed.

[0106] Alternatively, for example, an adhesive is attached to the circuit surface of the wafer facing downward with the back side thereof by a spin coater to form a coating film. The coating film is sandwiched between the support and the circuit surface of the wafer, and the support and the coating film are bonded together so that the support and the coating film are in contact with each other and the coating film and the circuit surface of the wafer are in contact with each other. For example, the adhesive is cured by heating at a temperature of 120 to 260° C. to form an adhesive layer. In this way, a laminated body in which the support and the wafer are bonded via the adhesive layer can be formed.

[0107] <Lamination process>

[0108] When the support and the coating film are bonded to each other and the coating film and the circuit surface of the wafer are bonded to each other, the support and the wafer may be bonded under reduced pressure (eg, 10 Pa to 10,000 Pa) to ensure sufficient bonding of the support and the wafer via the coating film.

[0109] Furthermore, heating may be performed during lamination. For example, lamination may be performed by heating (for example, at 30° C. to 100° C.) under reduced pressure.

[0110] <Heating process>

[0111] After bonding the support body and the coating film so as to be in contact with each other and the coating film and the circuit surface of the wafer so as to be in contact with each other, a heat treatment is performed.

[0112] The heating temperature and time may be any temperature and time at which the coating film (coating layer of the adhesive) is converted into an adhesive layer, and are, for example, as follows.

[0113] As for the heating temperature, the curing of the adhesive starts at about 120°C, and the temperature can also be set to above 260°C. However, from the perspective of the heat resistance of the circuit surface (device surface) of the chip, it is preferably below 260°C, for example, it can be set to about 150°C to 220°C or about 190°C to 200°C.

[0114] From the viewpoint of wafer bonding by curing, the heating time is preferably 1 minute or longer, and from the viewpoint of stabilizing the physical properties of the adhesive, more preferably 5 minutes or longer. For example, it can be 1 to 180 minutes or 5 to 120 minutes.

[0115] The heating device may be a hot plate, an oven, or the like.

[0116] (Laminate peeling method)

[0117] The present invention can include a method for peeling a laminated body as follows, wherein the above-mentioned adhesive is applied to a first substrate to form a coating film, a second substrate is arranged on the side of the coating film opposite to the first substrate, and the laminated body is heated in a state where the first substrate is in contact with the coating film and the coating film is in contact with the second substrate, thereby forming a laminated body in which the first substrate and the second substrate are joined via an adhesive layer, and after the laminated body is formed, the laminated body is processed and then the first substrate and the second substrate are peeled off.

[0118] The peeling occurs, for example, at the interface between the first substrate and the adhesive layer or at the interface between the second substrate and the adhesive layer.

[0119] The following method of peeling a laminated body can be mentioned, wherein the first base is a support body, the second base is a wafer, and the circuit surface of the wafer faces the first base.

[0120] Another example is a method for peeling a laminated body, wherein the first base is a wafer, the second base is a support, and the circuit surface of the wafer faces the second base.

[0121] <Processing steps>

[0122] The processing of the side opposite to the circuit surface of the wafer includes wafer thinning by polishing, and then formation of through silicon vias (TSV) and the like is performed.

[0123] After processing, the thinned wafer is peeled off from the support to form a stack of wafers for three-dimensional mounting. In addition, the formation of the wafer back electrode and the like is also performed before and after the three-dimensional mounting. In the thinning and TSV process of the wafer, heat of 250 to 350° C. is applied in the state of being bonded to the support, but the stack using the adhesive of the present invention is heat-resistant to this heat.

[0124] For example, a wafer having a diameter of 300 mm and a thickness of about 770 μm can be thinned to a thickness of about 80 μm to 4 μm by grinding the back surface opposite to the circuit surface.

[0125] <Peeling process>

[0126] After the back surface is processed (polished), the support body and the wafer are separated.

[0127] Examples of the peeling method include solvent peeling, laser peeling, mechanical peeling using a tool having a sharp portion, and peeling by peeling between a support and a wafer.

[0128] When the adhesive remains (resin remains) on the surface of the wafer, the resin can be removed by cleaning (dissolving, lifting off) with a solvent, tape peeling, or the like.

[0129] The present invention uses the above method to bond the first substrate and the second substrate via the adhesive layer to form a laminate. Then, the laminate is processed (for example, the back of the wafer is ground), and after the laminate is processed, the first substrate and the second substrate are peeled off by the above method. Thus, according to the present invention, the processed ground wafer (i.e., the thinned wafer) can be easily peeled off from the support.

[0130] Example

[0131] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows.

[0132] [Device]

[0133] (1) Mixing rotor: Mixing rotor VMR-5R manufactured by AS ONE Co., Ltd.

[0134] (2) Mixer: ARE-500, a rotary and revolving mixer manufactured by THINKY Co., Ltd.

[0135] (3) Vacuum bonding device: manufactured by SUSS MicroTec Co., Ltd., XBS300.

[0136] (4) Manual stripping device: manufactured by SUSS MicroTec Co., Ltd., manual stripping machine.

[0137] (5) Ultrasonic microscope: manufactured by SONOSCAN Co., Ltd., D9600Z / DC-SAM.

[0138] (6) Inert gas oven: manufactured by KOYO THERMO SYSTEMS Co., Ltd., INL-60NI.

[0139] [1] Preparation of adhesive composition

[0140] [Preparation Example 1]

[0141] 0.33 g of 1,1-diphenyl-2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) and 0.33 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie) were added to a 50 mL screw-capped tube, and stirred for 10 minutes using a mixing rotor to obtain a mixture (I). 0.33 g of the mixture (I), 16.2 g of a vinyl-containing MQ resin (manufactured by Wacker Chemie), 12.2 g of a vinyl-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 200 mPa·s, and 19.5 g of a SiH-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 100 mPa·s were added to a 300 mL stirring container dedicated to a rotational-revolutionary stirrer, and stirred for 5 minutes using a stirrer to obtain a mixture (II). 181.5 g of a p-menthane solution (concentration 81.7% by mass) of a vinyl-containing MQ resin (manufactured by Wacker Chemie) and 0.10 g of a platinum catalyst (manufactured by Wacker Chemie) were added to a 300 mL stirring container for a rotary and revolving stirrer, and the mixture was stirred for 5 minutes using a stirrer to obtain a mixture (III). 121.1 g of the mixture (III) was added to the mixture (II), and the mixture was stirred for 5 minutes using a stirrer to obtain a mixture (IV). 1.24 g of a polyether-modified silicone KP124 (manufactured by Shin-Etsu Chemical Co., Ltd.) was added to the mixture (IV) in such a manner that the mixing ratio of component (A) to component (B) (component (A): component (B)) was approximately 100 parts by mass: 1 part by mass, and the mixture was stirred for 5 minutes using a stirrer to obtain an adhesive (1).

[0142] [Preparation Example 2]

[0143] In Preparation Example 1, an adhesive (2) was obtained by the same method as in Preparation Example 1, except that 3.15 g of polyether-modified silicone KP124 (manufactured by Shin-Etsu Chemical Co., Ltd.) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) was 100 parts by mass:2 parts by mass.

[0144] [Preparation Example 3]

[0145] In Preparation Example 1, an adhesive (3) was obtained by the same method as in Preparation Example 1, except that 0.79 g of polyether-modified silicone KP124 (manufactured by Shin-Etsu Chemical Co., Ltd.) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) became 100 parts by mass:0.5 parts by mass.

[0146] [Preparation Example 4]

[0147] In Preparation Example 1, an adhesive (4) was obtained by the same method as in Preparation Example 1, except that 0.47 g of polyether-modified silicone KP124 (manufactured by Shin-Etsu Chemical Co., Ltd.) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) became 100 parts by mass:0.3 parts by mass.

[0148] [Preparation Example 5]

[0149] In Preparation Example 1, an adhesive (5) was obtained by the same method as in Preparation Example 1, except that 1.24 g of polyether-modified silicone L060 (manufactured by Wacker Chemie) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) was 100 parts by mass:1 part by mass.

[0150] [Preparation Example 6]

[0151] In Preparation Example 1, an adhesive (6) was obtained by the same method as in Preparation Example 1, except that 0.79 g of polyether-modified silicone L060 (manufactured by Wacker Chemie) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) became 100 parts by mass:0.5 parts by mass.

[0152] [Preparation Example 7]

[0153] In Preparation Example 1, an adhesive (7) was obtained by the same method as in Preparation Example 1, except that 0.47 g of polyether-modified silicone L060 (manufactured by Wacker Chemie) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) became 100 parts by mass:0.3 parts by mass.

[0154] [Preparation Example 8]

[0155] In Preparation Example 1, an adhesive (8) was obtained by the same method as in Preparation Example 1, except that 1.24 g of polyether-modified silicone L053 (manufactured by Wacker Chemie) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) was 100 parts by mass:1 part by mass.

[0156] [Preparation Example 9]

[0157] In Preparation Example 1, an adhesive (9) was obtained by the same method as in Preparation Example 1, except that 1.24 g of polyether-modified silicone DMC6031 (manufactured by Wacker Chemie) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) was 100 parts by mass:1 part by mass.

[0158] [Preparation Example 10]

[0159] In Preparation Example 1, an adhesive (10) was obtained by the same method as in Preparation Example 1, except that 1.24 g of polyether-modified silicone DMC6038 (manufactured by Wacker Chemie) was added to the mixture (IV) so that the mixing ratio of component (A) to component (B) was 100 parts by mass:1 part by mass.

[0160] [Comparative Preparation Example 1]

[0161] 0.33 g of 1,1-diphenyl-2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) and 0.33 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie) were added to a 50 mL screw-capped tube, and stirred for 10 minutes using a mixing rotor to obtain a mixture (I). 0.33 g of the mixture (I), 16.2 g of a vinyl-containing MQ resin (manufactured by Wacker Chemie), 12.2 g of a vinyl-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 200 mPa·s, and 19.5 g of a SiH-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 100 mPa·s were added to a 300 mL stirring container dedicated to a rotational-revolutionary stirrer, and stirred for 5 minutes using a stirrer to obtain a mixture (II). 181.5 g of a p-menthane solution (concentration 81.7% by mass) of a vinyl-containing MQ resin (manufactured by Wacker Chemie) and 0.10 g of a platinum catalyst (manufactured by Wacker Chemie) were added to a 300 mL stirring container for a rotary and revolving stirrer, and the mixture was stirred for 5 minutes using a stirrer to obtain a mixture (III). 121.1 g of the mixture (III) was added to the mixture (II), and the mixture was stirred for 5 minutes using a stirrer to obtain a mixture (IV). 7.9 g of EMS-622 (manufactured by Gelest) was added to the mixture (IV) in such a manner that the mixing ratio of component (A) to epoxy-modified silicone (component (A): epoxy-modified silicone) was approximately 100 parts by mass: 5 parts by mass, and the mixture was stirred for 5 minutes using a stirrer to obtain a comparative adhesive (1).

[0162] [3] Preparation of evaluation laminate

[0163] [Production example 1]

[0164] In order to form an adhesive layer on a 300 mm silicon wafer (thickness: 775 μm) serving as the device side wafer, the above-mentioned adhesives (1) to (10) and the comparative adhesive (1) were applied to the circuit surface of the wafer in a film thickness of about 60 μm by spin coating to form coating films (adhesive coating layers) (1) to (10) and a comparative coating film (1), respectively (in the examples, these coating films (1) to (10) and the comparative coating film (1) are collectively referred to as "coating films").

[0165] The wafer with the coating film and a 300 mm silicon wafer (thickness: 775 μm) as a wafer (support) on the carrier side were bonded in a vacuum bonding device (manual bonding machine manufactured by SUSS MicroTec) in a manner of sandwiching the coating film to produce a laminate. Then, the device side wafer was placed facing downward on a hot plate, and the laminate was heated at 130° C. for 5 minutes and at 200° C. for 5 minutes to produce a laminate in which the device side wafer and the carrier side wafer were bonded via an adhesive layer.

[0166] By heating the laminated products having the coating films (1) to (10), laminated products having the adhesive layers (1) to (10) were obtained. In addition, by heating the laminated products having the comparative coating film (1), a laminated product having the comparative adhesive layer (1) was obtained. It should be noted that in the examples, the laminated products having the adhesive layers (1) to (10) and the laminated product having the comparative adhesive layer (1) are also collectively referred to as "laminated products".

[0167] Then, the presence or absence of voids in the laminate obtained by the heat treatment was confirmed using an ultrasonic microscope (D9600Z / DC-SAM manufactured by SONOSCAN CORPORATION).

[0168] The case where no voids were observed after the heat treatment was evaluated as good adhesion and was marked as “◯”, while the case where voids were observed was evaluated as poor adhesion and was marked as “×”.

[0169] In order to confirm the peelability of the laminate, the force required for peeling was measured using a peeling device (manufactured by SUSS MicroTec, a manual bonder).

[0170] When the peeling was possible, the force required for peeling was indicated by a numerical value as a good result, and when the peeling was not possible, it was indicated by "×" as a bad result.

[0171] In addition, when confirming the peelability, the peeling interface was confirmed. The case where peeling occurred at the interface between the device side wafer and the adhesive layer and the peeling surface could be selected was recorded as "device", the case where peeling occurred at the interface between the carrier side wafer (support body) and the adhesive layer and the peeling surface could be selected was recorded as "carrier", the case where the peeling interface could not be selected was recorded as "△", the case where cohesive failure occurred in the adhesive layer was recorded as "×", and the case where peeling could not be performed was recorded as "-". The results are shown in Table 1.

[0172] [Table 1]

[0173] Adhesion Peelability Stripping interface Adhesive layer (1) ○ 15N Carrier Adhesive layer (2) ○ 13N Carrier Adhesive layer (3) ○ 18N Carrier Adhesive layer (4) ○ 19N Carrier Adhesive layer (5) ○ 18N Carrier Adhesive layer (6) ○ 19N Carrier Adhesive layer (7) ○ 20N Carrier Adhesive layer (8) ○ 21N Carrier Adhesive layer (9) ○ 15N Carrier Adhesive layer (10) ○ 15N Carrier Comparative adhesive layer (1) ○ 15N Devices

[0174] [Production example 2]

[0175] In order to form an adhesive layer on a 300 mm silicon wafer (thickness: 775 μm) serving as a carrier side wafer (support), the above-mentioned adhesives (1) to (10) and the comparative adhesive (1) are applied to the circuit surface of the wafer in a film thickness of about 60 μm by spin coating to form coating films (1) to (10) and a comparative coating film (1), respectively.

[0176] The wafer with the coating film and a 300 mm silicon wafer (thickness: 775 μm) as a wafer on the device side were bonded in a vacuum bonding device (manual bonding machine manufactured by SUSS MicroTec) in a manner of sandwiching the coating film to produce a laminate. Then, the laminate was heated at 130° C. for 5 minutes and at 200° C. for 5 minutes on a hot plate with the wafer on the device side facing downward, to produce a laminate in which the wafer on the device side and the wafer on the carrier side were bonded via an adhesive layer.

[0177] By heating the laminated products having the coating films (1) to (10), laminated products having adhesive layers (1) to (10) were obtained. In addition, by heating the laminated product having the comparative coating film (1), a laminated product having the comparative adhesive layer (1) was obtained.

[0178] Then, the presence or absence of voids in the laminate obtained by the heat treatment was confirmed using an ultrasonic microscope (D9600Z / DC-SAM manufactured by SONOSCAN CORPORATION).

[0179] The case where no voids were observed after the heat treatment was evaluated as good adhesion and was marked as “◯”, while the case where voids were observed was evaluated as poor adhesion and was marked as “×”.

[0180] In order to confirm the peelability of the laminate, the force required for peeling was measured using a peeling device (manufactured by SUSS MicroTec, a manual bonder).

[0181] When the peeling was possible, the force required for peeling was indicated by a numerical value as a good result, and when the peeling was not possible, it was indicated by "×" as a bad result.

[0182] In addition, when confirming the peelability, the peeling interface was confirmed. The case where peeling occurred at the interface between the device side wafer and the adhesive layer and the peeling surface could be selected was recorded as "device", the case where peeling occurred at the interface between the carrier side wafer (support body) and the adhesive layer and the peeling surface could be selected was recorded as "carrier", the case where the peeling interface could not be selected was recorded as "Δ", the case where cohesive failure occurred in the adhesive layer was recorded as "×", and the case where peeling could not be performed was recorded as "-". The results are shown in Table 2.

[0183] [Table 2]

[0184] Adhesion Peelability Stripping interface Adhesive layer (1) ○ 16N Devices Adhesive layer (2) ○ 13N Devices Adhesive layer (3) ○ 19N Devices Adhesive layer (4) ○ 19N Devices Adhesive layer (5) ○ 16N Devices Adhesive layer (6) ○ 19N Devices Adhesive layer (7) ○ 21N Devices Adhesive layer (8) ○ 14N Devices Adhesive layer (9) ○ 23N Devices Adhesive layer (10) ○ 16N Devices Comparative adhesive layer (1) ○ 18N Devices

[0185] According to the results of Preparation Examples 1 and 2, it can be confirmed that the adhesive of the present invention peels off at the interface between the wafer on the side opposite to the wafer on which the adhesive is applied and the adhesive layer. Thus, by determining which wafer on the device side or the carrier side the adhesive is initially applied to, it is possible to control which wafer on the device side or the carrier side the peeling interface occurs between and the adhesive layer. If this can be controlled, the range of options for the peeling conditions and the cleaning conditions after peeling can be expanded.

Claims

1. An adhesive which is releasably bonded between a support and a circuit surface of a wafer and is used for processing the back side of the wafer, the adhesive comprising: a component A which is cured by a hydrosilylation reaction and a component B which comprises a polyether-modified siloxane.

2. The adhesive according to claim 1, wherein The component A comprises polysiloxane A1 and platinum group metal catalyst A2, The polysiloxane A1 comprises polyorganosiloxane a1 and polyorganosiloxane a2, The polyorganosiloxane a1 comprises the following polysiloxane, which comprises a siloxane unit represented by SiO2, namely, a Q unit, R 1 R 2 R 3 SiO 1 / 2 The siloxane units shown are M units, R 4 R 5 SiO 2 / 2 The siloxane units shown are D units and R 6 SiO 3 / 2 The siloxane unit shown is at least one unit in the group consisting of T units, wherein the R 1 To R 6 Each independently represents an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms, and is bonded to a silicon atom via a Si—C bond, and the polysiloxane comprises an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms, The polyorganosiloxane a2 comprises the following polysiloxane, which comprises a siloxane unit selected from the group consisting of Q units, R 1 R 2 R 3 SiO 1 / 2 The siloxane units shown are M units, R 4 R 5 SiO 2 / 2 The siloxane units shown are D units and R 6 SiO 3 / 2 The siloxane unit shown is at least one unit in the group consisting of T units, wherein the R 1 To R 6 Each independently represents an alkyl group having 1 to 10 carbon atoms or a hydrogen atom, and is bonded to a silicon atom via a Si—C bond or a Si—H bond, and the polysiloxane contains an alkyl group having 1 to 10 carbon atoms and a Si—H group.

3. The adhesive according to claim 1, wherein The component B comprises a polyether-modified siloxane having a group represented by the following formula (B-1) or a polyether-modified siloxane represented by the following formula (B-2), In formula (B-1), R represents a group containing poly(oxyethylene) and / or poly(oxypropylene); n and m each represent an integer, In formula (B-2), n, x, and y each represent an integer.

4. The adhesive according to claim 3, wherein In the formula (B-1), the group represented by R is a poly(oxyethylene) group, a poly(oxypropylene) group, or a group represented by the following formula (B-1-1): In the formula (B-1-1), A represents H or CH 3 ; * represents a bonding bond; a and b each represent an integer greater than or equal to 0, and a+b is an integer greater than or equal to 1.

5. The adhesive according to claim 1, wherein The processing is backside grinding of the wafer.

6. A laminate comprising: a first matrix; a second substrate; and The adhesive layer is provided between the first substrate and the second substrate, wherein: The adhesive layer is formed of the adhesive according to any one of claims 1 to 5.

7. A method for producing a laminate, wherein: An adhesive as described in any one of claims 1 to 5 is applied to a first substrate to form a coating film, a second substrate is arranged on the side of the coating film opposite to the first substrate, and the coating film is heated in a state where the first substrate is in contact with the coating film and the coating film is in contact with the second substrate, thereby forming a laminated body in which the first substrate and the second substrate are joined via an adhesive layer.

8. The method for producing a laminate according to claim 7, wherein: The first substrate is a supporting body, the second substrate is a chip, and the circuit surface of the chip faces the first substrate.

9. The method for producing a laminate according to claim 7, wherein: The first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.

10. A method for peeling a laminate, wherein: An adhesive as described in any one of claims 1 to 4 is applied to a first substrate to form a coating film, and a second substrate is arranged on the side of the coating film opposite to the first substrate. The coating film is heated in a state where the first substrate is in contact with the coating film and the coating film is in contact with the second substrate, thereby forming a laminated body in which the first substrate and the second substrate are bonded via an adhesive layer. After the laminated body is formed, the laminated body is processed and then the first substrate and the second substrate are peeled off.

11. A method for peeling a laminate, wherein: The adhesive as described in claim 5 is applied on a first substrate to form a coating film, and a second substrate is arranged on the side of the coating film opposite to the first substrate. The coating film is heated in a state where the first substrate is in contact with the coating film and the coating film is in contact with the second substrate, thereby forming a stacked body in which the first substrate and the second substrate are joined via an adhesive layer. After the stacked body is formed, the stacked body is processed and then the first substrate and the second substrate are peeled off.

12. The method for peeling a laminate according to claim 10, wherein: The first substrate is a supporting body, the second substrate is a chip, and the circuit surface of the chip faces the first substrate.

13. The method for peeling a laminate according to claim 11, wherein: The first substrate is a supporting body, the second substrate is a chip, and the circuit surface of the chip faces the first substrate.

14. The method for peeling a laminate according to claim 10, wherein: The first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.

15. The method for peeling a laminate according to claim 11, wherein: The first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.

16. The method for peeling a laminate according to claim 10, wherein: The processing is backside grinding of the wafer.

Images