Method for manufacturing semiconductor device

Abstract

The present specification relates to a method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device according to one embodiment may include: a step of forming an insulating layer on a substrate; a step of performing a microwave heat treatment step; a step of forming a conductive layer on the insulating layer; and performing a heat treatment step.

Description

Technical Field

[0001] This specification relates to a method for manufacturing a semiconductor device. Background Art

[0002] As semiconductors are scaled down, the thickness of the gate insulating film becomes thinner than the limit, which leads to leakage current problems. To overcome this problem, materials with excellent insulating effects (such as SiO2) are widely used in the manufacturing process of semiconductor devices. Recently, high dielectric constant (High-K) materials (such as HfO2, HfSi x 、HfAl x ) is also used as an active layer. During the vapor deposition process of these insulating and high-dielectric-constant materials, structural defects (defects) occur. Therefore, defects are cured (curing) through a heat treatment process. Therefore, with the advancement of semiconductor technology, the importance of heat treatment process technology is increasing.

[0003] However, when high-temperature heat treatment is performed during semiconductor device manufacturing, the likelihood of ionized interface charge and trapped charge increases, potentially reducing the reliability of the semiconductor device. Furthermore, when high-temperature heat treatment is performed during semiconductor device manufacturing, the thermal budget may increase. Therefore, there is a need to develop efficient and economical heat treatment processes applicable to semiconductor device manufacturing.

[0004] A prior art document (Korean Patent Gazette No. 10-0621776) discloses a method of applying microwaves to an amorphous silicon film during a short annealing process. However, the prior art document does not disclose a method that can overcome the disadvantages of microwave heat treatment. Summary of the Invention

[0005] Technical issues

[0006] The present specification aims to provide a method for manufacturing a semiconductor device that can improve the reliability and electrical characteristics of the semiconductor device through heat treatment.

[0007] The objectives of this specification are not limited to the objectives mentioned above. A person skilled in the art of the art to which the present invention relates can more clearly understand other objectives and advantages of this specification that are not mentioned from the embodiments described below. In addition, the objectives and advantages of this specification can be achieved by the structural elements and their combinations described in the scope of the invention patent application.

[0008] Solutions to the Problem

[0009] A method for manufacturing a semiconductor device according to an embodiment of the present invention may include: forming an insulating layer on a substrate; performing a microwave heat treatment process; forming a conductive layer on the insulating layer; and performing a heat treatment process.

[0010] According to one embodiment of the present invention, a method for manufacturing a semiconductor device may include: forming a first insulating layer on a substrate; performing a first microwave heat treatment process; forming a second insulating layer having a higher dielectric constant than the first insulating layer on the first insulating layer; performing a second microwave heat treatment process; forming a conductive layer on the second insulating layer; and performing a heat treatment process.

[0011] Effects of the Invention

[0012] According to the embodiments, during the manufacturing process of a semiconductor device, defects caused by microwave heat treatment can be repaired with a low thermal budget.

[0013] According to the embodiments, during the manufacturing process of the semiconductor device, the conductive layer can be passivated at a relatively low temperature without damaging the conductive layer.

[0014] According to the embodiment, the density of interface charges and fixed charges in the semiconductor device is reduced, thereby ensuring excellent charge mobility characteristics.

[0015] According to the embodiment, the interface reaction is minimized by the low temperature heat treatment, and the interface charges and the fixed charges can be passivated.

[0016] According to the embodiments, negative bias temperature instability (NBTI) of a P-type transistor (PMOS) of a semiconductor device can be improved.

[0017] According to the embodiment, microwaves are applied to the semiconductor to remove unstable bonds between atoms remaining at the interface, and atoms such as hydrogen (H), fluorine (F) or chlorine (Cl) are used to combine the atoms remaining at the interface, thereby improving the characteristics of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 1 is a diagram illustrating a method for manufacturing a semiconductor device according to an embodiment.

[0019] Figure 2 1 is a diagram illustrating a method for manufacturing a semiconductor device according to another embodiment.

[0020] Figure 3 To show the basis Figure 2Graph showing electron mobility characteristics of a semiconductor device manufactured in an embodiment.

[0021] Figure 4 FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to yet another embodiment.

[0022] Figure 5 FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to yet another embodiment.

[0023] Figure 6 To show the basis Figure 5 Graph showing electron mobility characteristics of a semiconductor device manufactured in an embodiment. DETAILED DESCRIPTION

[0024] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings so that a person skilled in the art can easily understand and reproduce the embodiments of the present invention. In the process of describing the present invention, when it is determined that the specific description of the relevant well-known functions or structures makes the subject matter of the embodiments of the present invention unclear, the detailed description thereof will be omitted. The terms used in this specification may be fully deformed according to the intentions, conventions, etc. of the users or operators, and therefore, the definitions of each term should be given based on the overall content of this specification.

[0025] Furthermore, the embodiments of the inventions described above will become more apparent through the examples described below. In this specification, even if the selectively described embodiments or the structures of the selectively described examples are shown as a single combined structure in the drawings, unless otherwise noted, it should be understood that they can be freely combined with each other unless there is no clear technical contradiction to those skilled in the art.

[0026] Therefore, the embodiments described in this specification and the structures shown in the drawings are merely preferred embodiments of the present invention, and do not replace the technical ideas of the present invention. Therefore, at the time of this application, there may be multiple equivalent technical solutions and variations that can replace these.

[0027] Figure 1 1 is a diagram illustrating a method for manufacturing a semiconductor device according to an embodiment.

[0028] According to one embodiment, a method for manufacturing a semiconductor device may include: step (a), forming a first insulating layer 110 on a substrate 100; step (b), performing a first microwave (MW) heat treatment process; step (c), forming a conductive layer 120 on the first insulating layer; and step (d), performing a hydrogen heat treatment process.

[0029] The substrate 100 may contain silicon (Si). The first insulating layer 110 may contain silicon dioxide (SiO2). Typically, silicon atoms have a predetermined density on the surface of a silicon (Si) substrate, and most of these atoms are bonded to oxygen during the SiO2 formation process. However, approximately 1% or less of these atoms form dangling bonds. These weak bonds, or defects, can degrade the electrical properties of the semiconductor device.

[0030] In one embodiment, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band ranging from 2.4 GHz to 2.5 GHz and a temperature range of 200° C. to 500° C. According to an embodiment, step (b) of performing the first microwave (MW) heat treatment process may also be performed in a frequency band ranging from 1 GHz to 5 GHz. Preferably, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band of 2.45 GHz and a temperature range of 250° C. to 450° C. for 0.5 to 120 minutes.

[0031] Temperature conditions can be determined by microwave intensity. Microwave heat treatment not only shortens the heat treatment time but also allows for selective heating, resulting in a low thermal budget. Microwave heat treatment promotes the rotation and vibration of silicon atoms or oxygen molecules, repairing defects caused by dangling bonds. Furthermore, dangling bonds not repaired by microwave heat treatment can be converted into stable Si-H bonds through the hydrogen treatment process described below.

[0032] In one embodiment, step (c) of forming the conductive layer 120 on the first insulating layer 110 may be a metallization process. The conductive layer 120 may include a circuit pattern, an electrode, a source / drain, or wiring. The conductive layer 120 may overlap the entire or a portion of the first insulating layer 110.

[0033] In one embodiment, step (d) of performing a hydrogen (H2) heat treatment process may be performed after step (c). Preferably, step (d) of performing a hydrogen (H2) heat treatment process is performed in a hydrogen environment of 3% to 10%, in a pressure range of 2 atmospheres to 50 atmospheres and a temperature range of 200°C to 500°C (preferably, 350°C to 450°C). The gas other than hydrogen may be nitrogen (N2). When the hydrogen concentration is above 10%, the explosion hazard in a flammable environment may increase. As long as the hydrogen heat treatment device is feasible in design, it can be used. Therefore, the use of hydrogen with a higher concentration than this is not excluded. For example, step (d) of performing a hydrogen (H2) heat treatment process may be performed in a hydrogen environment of 90% to 100%.

[0034] The above process can passivate the interface charge and fixed charge at a relatively low temperature without damaging the conductive layer 120. This reduces the density of the interface charge and fixed charge, thereby ensuring excellent electron mobility. The hydrogen may include deuterium (D2).

[0035] Figure 2 1 is a diagram illustrating a method for manufacturing a semiconductor device according to another embodiment.

[0036] According to another embodiment, a method for manufacturing a semiconductor device based on heat treatment may include: step (a), forming a first insulating layer 110 on a substrate; step (b), performing a first microwave (MW) heat treatment process; step (c), forming a second insulating layer 130 having a higher dielectric constant than the first insulating layer on the first insulating layer; step (d), performing a second microwave heat treatment process; step (e), forming a conductive layer 120 on the second insulating layer; and step (f), performing a hydrogen (H2) heat treatment process.

[0037] The substrate 100 may contain silicon (Si). The first insulating layer 110 may contain silicon dioxide (SiO2). Typically, silicon atoms have a predetermined density on the surface of a silicon (Si) substrate, and most of these atoms are bonded to oxygen during the SiO2 formation process. However, approximately 1% or less of these atoms form dangling bonds. These weak bonds, or defects, can degrade the electrical properties of the semiconductor device.

[0038] In one embodiment, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band ranging from 2.4 GHz to 2.5 GHz and a temperature range of 200° C. to 500° C. According to an embodiment, step (b) of performing the first microwave (MW) heat treatment process may also be performed in a frequency band ranging from 1 GHz to 5 GHz. Preferably, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band of 2.45 GHz and a temperature range of 250° C. to 450° C. for 0.5 to 120 minutes.

[0039] Temperature conditions can be determined by microwave intensity. Microwave heat treatment not only shortens the heat treatment time but also allows for selective heating, resulting in a low thermal budget. Microwave heat treatment promotes the rotation and vibration of silicon atoms or oxygen molecules, repairing defects caused by dangling bonds. Furthermore, dangling bonds not repaired by microwave heat treatment can be converted into stable Si-H bonds through the hydrogen treatment process described below.

[0040] In step (c) of forming the second insulating layer 130 having a higher dielectric constant than the first insulating layer on the first insulating layer 110, the dielectric constant of the second insulating layer may be greater than the dielectric constant of the first insulating layer. For example, the second insulating layer 130 may include HfO2, HfSi x 、HfAl x Preferably, the second insulating layer 130 may contain at least one of hafnium dioxide (HfO 2 ).

[0041] The step (d) of performing the second microwave (MW) heat treatment process can be performed in a frequency band range of 5.7 GHz to 5.9 GHz and a temperature range of 200°C to 500°C. In another embodiment, the step (d) of performing the second microwave (MW) heat treatment process can also be performed in a frequency band range of 4 GHz to 7 GHz. In the second insulating layer 130, due to the characteristics of the high dielectric constant (Hig-K), the proportion of dangling bonds may increase. Therefore, a high frequency band can be applied. However, this is only one embodiment, and the step (d) of performing the second microwave (MW) heat treatment process can also be performed in a frequency band range of 2.4 GHz to 2.5 GHz or a frequency band range of 1 GHz to 5 GHz.

[0042] In one embodiment, step (e) of forming the conductive layer 120 on the second insulating layer 130 may be a metallization process. The conductive layer 120 may include circuit patterns, electrodes, source / drain electrodes, or wiring. The conductive layer 120 may overlap all or a portion of the second insulating layer 130.

[0043] In another embodiment, a third insulating layer (not shown) may be formed between the conductive layer 120 and the second insulating layer 130 .

[0044] In one embodiment, step (f) of performing a hydrogen (H2) heat treatment process may be performed after the above-mentioned step (e). Preferably, step (f) of performing a hydrogen (H2) heat treatment process may be performed in a hydrogen environment of 3% to 10%, in a pressure range of 2 atmospheres to 50 atmospheres and a temperature range of 200°C to 500°C (preferably, 350°C to 450°C). The gas other than hydrogen may be nitrogen (N2). When the hydrogen concentration is above 10%, the explosion hazard in a flammable environment may increase. As long as the hydrogen heat treatment device is feasible in design, it can be used. Therefore, the use of a higher concentration of hydrogen than this is not excluded. For example, step (f) of performing a hydrogen (H2) heat treatment process may be performed in a hydrogen environment of 90% to 100%.

[0045] The above process allows the interface charge and fixed charge to be passivated at relatively low temperatures without damaging the conductive layer 120, thereby passivating defects that cannot be repaired by microwave treatment. This reduces the density of interface charge and fixed charge, ensuring excellent electron mobility. The hydrogen may include deuterium (D2).

[0046] Figure 3 To show the basis Figure 2 Graph showing electron mobility characteristics of a semiconductor device manufactured in an embodiment.

[0047] Reference Figure 3 For semiconductor devices heat-treated in the 2.45GHz microwave band, the electron mobility of the semiconductor devices was measured by slowly increasing the hydrogen pressure over 10 minutes at a temperature of 400°C. The results showed that the electron mobility increased significantly within the pressure range of 2 atmospheres to 50 atmospheres.

[0048] Figure 4 1 is a diagram illustrating a method for manufacturing a semiconductor device according to another embodiment.

[0049] According to one embodiment, a method for manufacturing a semiconductor device based on heat treatment may include: step (a), forming a first insulating layer on a substrate; step (b), performing a first microwave heat treatment process; step (c), forming a conductive layer on the first insulating layer; and step (d), performing a fluorine (F2) or chlorine (Cl) heat treatment process.

[0050] The substrate 100 may contain silicon (Si). The first insulating layer 110 may contain silicon dioxide (SiO2). Typically, the surface of a silicon (Si) substrate has a predetermined density of silicon atoms. During the SiO2 formation process, most of these atoms are bonded to oxygen. However, approximately 1% or less of these atoms form dangling bonds. These weak bonds, known as defects, can degrade the electrical properties of the semiconductor device.

[0051] In one embodiment, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band ranging from 2.4 GHz to 2.5 GHz and a temperature range of 200° C. to 500° C. According to an embodiment, step (b) of performing the first microwave (MW) heat treatment process may also be performed in a frequency band ranging from 1 GHz to 5 GHz. Preferably, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band of 2.45 GHz and a temperature range of 250° C. to 450° C. for 0.5 to 120 minutes.

[0052] Temperature conditions can be determined by microwave (MW) intensity. Microwave (MW) heat treatment not only shortens the heat treatment time but also enables selective heating, resulting in a low thermal budget. Microwave (MW) heat treatment promotes the rotation and vibration of silicon atoms or oxygen molecules, thereby repairing defects caused by the formation of dangling bonds. Furthermore, dangling bonds not repaired by microwave (MW) heat treatment can be converted into stable Si-F bonds or Si-Cl bonds during the fluorine (F2) or chlorine (Cl) heat treatment described later.

[0053] Step (c) of forming the conductive layer 120 on the first insulating layer 110 according to one embodiment may refer to a metallization process. The conductive layer 120 may include a circuit pattern, an electrode, a source / drain, or wiring. The conductive layer 120 may overlap the entire or a portion of the first insulating layer 110.

[0054] According to one embodiment, step (d) of performing a fluorine (F2) or chlorine (Cl) heat treatment process may be performed after step (c). Step (d) of performing a fluorine (F2) or chlorine (Cl) heat treatment process may be performed at a concentration range of 0.1% to 1% and a temperature range of 300°C to 500°C for 10 to 30 minutes. In addition to fluorine (F2) or chlorine (Cl), the gas accounting for 99.9% to 99% may be an inert gas (e.g., argon (Ar)). However, fluorine (F2) gas need not be used, and other gases containing fluorine (F) may also be used according to embodiments.

[0055] According to an embodiment, the concentration of fluorine (F2) or chlorine (Cl) may be greater than 1%. For example, in step (d) of performing the fluorine (F2) or chlorine (Cl) heat treatment process, the concentration of fluorine (F2) or chlorine (Cl) may be 90% to 100%.

[0056] Fluorine (F2) and chlorine (Cl) are generally highly reactive. By performing a fluorine (F2) or chlorine (Cl) heat treatment process, the interface charge and fixed charge can be passivated at relatively low temperatures without damaging the conductive layer 120. This reduces the density of interface charge and fixed charge, ensuring excellent electron mobility and enabling the manufacture of highly reliable devices.

[0057] Figure 5 FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to yet another embodiment.

[0058] According to one embodiment, a method for manufacturing a semiconductor device based on heat treatment may include: step (a), forming a first insulating layer 110 on a substrate 100; step (b), performing a first microwave (MW) heat treatment process; step (c), forming a second insulating layer 130 having a higher dielectric constant than the first insulating layer on the first insulating layer 110; step (d), performing a second microwave (MW) heat treatment process; step (e), forming a conductive layer 120 on the second insulating layer 130; and step (f), performing a fluorine (F2) or chlorine (Cl) heat treatment process.

[0059] The substrate 100 may contain silicon (Si). The first insulating layer 110 may contain silicon dioxide (SiO2). Typically, silicon atoms have a predetermined density on the surface of a silicon (Si) substrate, and most of these atoms are bonded to oxygen during the SiO2 formation process. However, approximately 1% or less of these atoms form dangling bonds. These weak bonds, or defects, can degrade the electrical properties of the semiconductor device.

[0060] In one embodiment, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band ranging from 2.4 GHz to 2.5 GHz and a temperature range of 200° C. to 500° C. According to an embodiment, step (b) of performing the first microwave (MW) heat treatment process may also be performed in a frequency band ranging from 1 GHz to 5 GHz. Preferably, step (b) of performing the first microwave (MW) heat treatment process may be performed in a frequency band of 2.45 GHz and a temperature range of 250° C. to 450° C. for 0.5 to 120 minutes.

[0061] Temperature conditions can be determined by microwave (MW) intensity. Microwave (MW) heat treatment not only shortens the heat treatment time but also enables selective heating, resulting in a low thermal budget. Microwave (MW) heat treatment promotes the rotation and vibration of silicon atoms or oxygen molecules, thereby repairing defects caused by the formation of dangling bonds. Furthermore, dangling bonds not repaired by microwave (MW) heat treatment can be converted into stable Si-F bonds or Si-Cl bonds during the fluorine (F2) or chlorine (Cl) heat treatment described later.

[0062] In step (c) of forming the second insulating layer 130 having a higher dielectric constant than the first insulating layer on the first insulating layer 110, the dielectric constant of the second insulating layer may be greater than the dielectric constant of the second insulating layer. For example, the second insulating layer 130 may include HfO2, HfSi x 、HfAl x Preferably, the second insulating layer 130 may include a hafnium dioxide (HfO 2 ) component.

[0063] The step (d) of performing the second microwave (MW) heat treatment process can be performed in a frequency band range of 5.7 GHz to 5.9 GHz and a temperature range of 200°C to 500°C. The step (d) of performing the second microwave (MW) heat treatment process can also be performed in a frequency band range of 4 GHz to 7 GHz. In the second insulating layer 130, due to the characteristics of the high dielectric constant (Hig-K), the proportion of dangling bonds may increase. Therefore, a high frequency band can be applied. However, this is only one embodiment, and the step (d) of performing the second microwave (MW) heat treatment process can also be performed in a frequency band range of 2.4 GHz to 2.5 GHz or a frequency band range of 1 GHz to 5 GHz.

[0064] According to one embodiment, step (e) of forming the conductive layer 120 on the second insulating layer 130 may be a metallization process. The conductive layer 120 may include a circuit pattern, an electrode, a source / drain, or wiring. The conductive layer 120 may overlap the entire or a portion of the first insulating layer 110.

[0065] According to one embodiment, step (f) of performing a fluorine (F2) or chlorine (Cl) heat treatment process may be performed after step (e). Step (f) of performing a fluorine (F2) or chlorine (Cl) heat treatment process may be performed at a concentration range of 0.1% to 1% and a temperature range of 300°C to 500°C for 10 to 30 minutes. In addition to fluorine (F2) or chlorine (Cl), the gas accounting for 99.9% to 99% may be an inert gas (e.g., argon (Ar)). However, fluorine (F2) gas need not be used, and other gases containing fluorine (F) may also be used according to embodiments.

[0066] According to an embodiment, the concentration of fluorine (F2) or chlorine (Cl) may be greater than 1%. For example, in step (d) of performing the fluorine (F2) or chlorine (Cl) heat treatment process, the concentration of fluorine (F2) or chlorine (Cl) may be 90% to 100%.

[0067] The fluorine (F2) or chlorine (Cl) heat treatment process described above can passivate interface charges and fixed charges at relatively low temperatures without damaging the conductive layer 120. This allows for passivation of defects that have not been repaired by microwave heat treatment. Furthermore, this reduces the density of interface charges and fixed charges, ensuring excellent electron mobility and enabling the manufacture of highly reliable devices.

[0068] According to one embodiment, after performing the fluorine (F2) or chlorine (Cl) heat treatment step (f), a further step may be performed. Figure 2 The passivation effect of the hydrogen heat treatment can be further enhanced.

[0069] Figure 6 To show the basis Figure 5 Graph showing electron mobility characteristics of a semiconductor device manufactured in an embodiment.

[0070] Reference Figure 6 For semiconductor devices heat-treated in the 5.8 GHz microwave band, the temperature of the fluorine (F2) environment was slowly increased over 20 minutes and the electron mobility was measured. The results showed that the electron mobility would increase significantly in the temperature range of 300°C to 500°C.

[0071] As described above, the embodiments have been described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments and drawings described in this specification, and various modifications can be made by those skilled in the art. In the process of describing the embodiments, even if the effects based on the inventive structure are not explicitly described, it should be recognized that other effects can be expected from the corresponding structure.

Claims

1. A method for manufacturing a semiconductor device, comprising: forming an insulating layer on the substrate; The step of performing a microwave heat treatment process; forming a conductive layer on the insulating layer; as well as The step of performing a heat treatment process.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The insulating layer contains silicon dioxide (SiO2) component.

3. The method for manufacturing a semiconductor device according to claim 1, wherein: The step of performing the microwave heat treatment process is performed at a temperature ranging from 200°C to 500°C.

4. The method for manufacturing a semiconductor device according to claim 1, wherein: The heat treatment step is performed in a gas environment containing at least one of hydrogen, fluorine, and chlorine.

5. The method for manufacturing a semiconductor device according to claim 4, wherein: The heat treatment process is performed at a pressure range of 2 atmospheres to 50 atmospheres and a temperature range of 200° C. to 500° C.

6. A method for manufacturing a semiconductor device, comprising: forming a first insulating layer on the substrate; The step of performing a first microwave heat treatment process; forming a second insulating layer having a higher dielectric constant than the first insulating layer on the first insulating layer; The step of performing a second microwave heat treatment process; forming a conductive layer on the second insulating layer; as well as The step of performing a heat treatment process.

7. The method for manufacturing a semiconductor device according to claim 6, wherein: The first insulating layer includes a silicon dioxide (SiO 2 ) component, and the second insulating layer includes a hafnium dioxide (HfO 2 ) component.

8. The method for manufacturing a semiconductor device according to claim 6, wherein: The first microwave heat treatment process or the second microwave heat treatment process is performed at a temperature range of 200°C to 500°C.

9. The method for manufacturing a semiconductor device according to claim 6, wherein: The heat treatment step is performed in a gas environment containing at least one of hydrogen, fluorine, and chlorine.

10. The method for manufacturing a semiconductor device according to claim 9, wherein: The heat treatment process is performed at a pressure range of 2 atmospheres to 50 atmospheres and a temperature range of 200° C. to 500° C.

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