Mask for continuously transverse solidifying technology and method for forming polycrystal silicon layer
A lateral curing, polysilicon thin film technology, applied in the field of masks, can solve problems such as poor electrical properties
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[0039] The invention discloses a mask applied to continuous lateral solidification (SLS) to produce a polysilicon film with dispersed crystal boundaries. The mask of the present invention will be described in detail below with reference to the accompanying drawings and multiple specific embodiments.
[0040] like figure 2 Shown is a schematic top view of a mask in a preferred embodiment of the present invention. figure 2 The mask 3 includes at least: a first area 31 , a second area 32 , and a third area 33 . Wherein, the first area 31 and the third area 33 are light-transmitting, and the second area 32 is light-shielding.
[0041] The first region 31 surrounds the second region 32 , and the first region 31 and the second region 32 have substantially the same peripheral shape. The third region 33 has the same peripheral shape as the first region 31 , and in this embodiment, the peripheral shapes of the above three regions are rectangular structures. Moreover, the third ar...
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