High-voltage MOS diode

Abstract

The utility model relates to the technical field of semiconductors, in particular to a high-voltage metal oxide semiconductor (MOS) diode, which comprises a packaging body, an MOS chip is arranged inside the packaging body, three pins are connected below the packaging body, the three pins are respectively connected with the MOS chip through a first aluminum wire and two second aluminum wires, and the first aluminum wire and the second aluminum wire are respectively connected with the MOS chip. And a source electrode, a grid electrode and a drain electrode are sequentially formed. A plurality of thimbles are arranged on an MOS chip, and a multi-thimble structure is used for carrying out die bonding on the MOS diode, so that the effective width of the MOS chip is increased, the resistance of the MOS diode in a conducting state can be reduced, the conducting characteristic of a device is improved, meanwhile, the multi-thimble structure is adopted, the charge density on the MOS chip can be reduced, the charge voltage drop can be reduced, and the reliability of the device is improved. And the switching speed and the loss characteristic of the device are improved, so that the stress on the MOS chip is dispersed, and the risk of crystal cracking is further reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a high-voltage MOS diode. Background Art

[0002] The development of semiconductor power devices and power can be traced back to 1956, when GE developed the silicon-controlled rectifier and put it into commercial production the following year. It was a milestone in the transition of semiconductor applications from weak electricity to strong electricity. After the development of the first generation of various traditional thyristors and the second generation of power bipolar transistors, power MOSFETs began to appear in the 1990s and were widely used in small and medium power fields. Subsequently, various inverters and thyristor power bipolar transistors gradually gave way to MOSFETs. The speed at which power MOS tubes replaced power bipolar transistors to occupy new markets has increased rapidly. This is mainly due to the great improvement in MOSFET performance brought about by micro-machining technology, which enables the device to have the advantages of high voltage resistance, high current, low on-resistance, high power density and low price.

[0003] The working principle of MOS tube (N-channel enhancement type MOS field effect tube) is to use VGS to control the amount of "induced charge" to change the state of the conductive channel formed by these "induced charges", and then achieve the purpose of controlling the drain current. In the process or process of manufacturing MOS tube, during the welding of MOS tube chip, due to the large chip area, it is easy to cause the risk of crystal cracking, which in turn affects the structural integrity of the MOS tube and causes the performance of the device to decline. Utility Model Content

[0004] The utility model aims to solve the shortcomings in the prior art and proposes a high-voltage MOS diode.

[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0006] A high-voltage MOS diode comprises a package body, a MOS chip is arranged inside the package body, and three pins are connected to the bottom of the package body, wherein the three pins are respectively connected to the MOS chip through a first aluminum wire and two second aluminum wires, and sequentially form a source electrode, a gate electrode and a drain electrode.

[0007] Preferably, the MOS chip is provided with a plurality of grooves, and ejector pins are installed in the grooves.

[0008] Preferably, the size of the first aluminum wire is 5 mil, and the size of the second aluminum wire is 15 mil.

[0009] Preferably, outer surfaces of the source electrode, the gate electrode and the drain electrode are all covered with a metallization layer.

[0010] The beneficial effects of the utility model are:

[0011] By setting multiple ejector pins on the MOS chip and using a multi-ejector pin structure to fix the MOS diode, the effective width of the MOS chip is increased, which can reduce the resistance of the MOS diode in the on state and improve the conduction characteristics of the device. At the same time, the multi-ejector pin structure can reduce the charge density on the MOS chip, reduce the charge voltage drop, improve the switching speed and loss characteristics of the device, and disperse the stress on the MOS chip, thereby reducing the risk of crystal cracking.

[0012] Aluminum wire is used to connect the MOS chip to the three pins. Since aluminum wire has good conductivity, it can effectively transmit current. Connecting the MOS chip to the three pins ensures the reliability of signal and power transmission. At the same time, aluminum wire is easy to weld and can be well combined with the metallization layer on the MOS chip and the pins, ensuring the firmness and stability of the connection. It can maintain a stable connection state under long-term use and various environmental conditions and is not prone to breakage or loosening. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic diagram of the overall structure of a high-voltage MOS diode proposed by the utility model;

[0014] Figure 2 The utility model is a schematic diagram of the connection structure between the MOS chip and the ejector pin of a high-voltage MOS diode.

[0015] In the figure:

[0016] 1. Package; 2. MOS chip; 3. First aluminum wire; 4. Second aluminum wire; 5. Source electrode; 6. Gate electrode; 7. Drain electrode; 8. Ejector pin. DETAILED DESCRIPTION

[0017] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0018] The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.

[0019] The standard parts used in the utility model can all be purchased from the market, and special-shaped parts can be customized according to the instructions and the drawings. The specific connection methods of each part adopt the conventional means such as mature bolts, rivets, welding, etc. in the existing technology. The machinery, parts and equipment all adopt the conventional models in the existing technology, and the circuit connection adopts the conventional connection method in the existing technology, which will not be described in detail here.

[0020] Example:

[0021] Reference Figure 1-2 A high-voltage MOS diode includes a package body 1, a MOS chip 2 is arranged inside the package body 1, and three pins are connected to the bottom of the package body 1, wherein the three pins are respectively connected to the MOS chip 2 through a first aluminum wire 3 and two second aluminum wires 4, and sequentially form a source electrode 5, a gate electrode 6 and a drain electrode 7.

[0022] The MOS chip 2 is provided with a plurality of grooves, and ejector pins 8 are installed in the grooves.

[0023] The size of the first aluminum wire 3 is 5 mil, and the size of the second aluminum wire 4 is 15 mil.

[0024] The outer surfaces of the source electrode 5 , the gate electrode 6 and the drain electrode 7 are all covered with a metallization layer.

[0025] In this embodiment, during the welding process of the MOS diode, a plurality of ejector pins 8 are arranged on the MOS chip 2, and the MOS diode is solidified by using the plurality of ejector pins 8, thereby increasing the effective width of the MOS chip 2, thereby reducing the resistance of the MOS diode in the on state and improving the conduction characteristics of the device. At the same time, the use of a multi-ejector pin structure can reduce the charge density on the MOS chip 2, reduce the charge voltage drop, improve the switching speed and loss characteristics of the device, and disperse the stress on the MOS chip 2, thereby reducing the risk of crystal cracking.

[0026] The MOS chip 2 is connected to the three pins by using the first aluminum wire 3 and the second aluminum wire 4. Since the aluminum wire has good electrical conductivity, it can effectively transmit current, and the MOS chip 2 is connected to the three pins, thereby ensuring the reliability of signal and power transmission. At the same time, the aluminum wire is easy to weld and can be well combined with the metallization layer on the MOS chip 2 and the pins, thereby ensuring the firmness and stability of the connection, and can maintain a stable connection state under long-term use and various environmental conditions, and is not prone to breakage or loosening.

[0027] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0028] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0029] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A high voltage MOS diode, comprising a package (1), characterized in that: A MOS chip (2) is arranged inside the package (1), and three pins are connected to the bottom of the package (1), wherein the three pins are respectively connected to the MOS chip (2) via a first aluminum wire (3) and two second aluminum wires (4), and sequentially form a source electrode (5), a gate electrode (6), and a drain electrode (7).

2. A high voltage MOS diode according to claim 1, characterized in that: The MOS chip (2) is provided with a plurality of grooves, and ejector pins (8) are installed in the grooves.

3. A high voltage MOS diode according to claim 1, characterized in that: The size of the first aluminum wire (3) is 5 mil, and the size of the second aluminum wire (4) is 15 mil.

4. A high voltage MOS diode according to claim 1, characterized in that: The outer surfaces of the source electrode (5), the gate electrode (6) and the drain electrode (7) are all covered with a metallization layer.

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