Refresh control circuit and memory device including same

Active Publication Date: 2017-05-18
SK HYNIX INC
View PDF3 Cites 67 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is about a memory device that stops data from getting damaged in a specific part of the memory. This helps to improve the lifespan of the data.

Problems solved by technology

However, the initial charge stored in the capacitor may be degraded due to a leakage current caused by a PN junction of a MOS transistor, and, thus, the data may be lost.
Furthermore, electromagnetic waves generated while the word line WLK toggles between the active state and the precharge state may introduce / discharge electrons into / from the cell capacitors CAP_K+1 and CAP_K+1 included in the memory cells CELL_K−1 and CELL_K+1 coupled to the adjacent word lines WLK−1 and WLK+1, thereby damaging the data of the memory cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Refresh control circuit and memory device including same
  • Refresh control circuit and memory device including same
  • Refresh control circuit and memory device including same

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0061]FIG. 5A is a diagram illustrating the operation of the memory device, according to the

[0062]FIG. 5A illustrates the case in which an active operation of the memory bank BK0 is performed between a refresh command REFC1 and the previous refresh command (not illustrated in FIG. 5A) (ACT_OP), and not between the refresh command REFC1 and the refresh command REFC2.

[0063]Since the active operation of the memory bank BK0 was performed between the refresh command REFC1 and the previous refresh command, normal refresh operations NR1 and NR2 and target refresh operations TR1 and TR2 may be performed in the memory bank BK0 in response to the refresh command REFC1. When the address stored in the address storage unit 410_0 corresponds to the word line WL111, the word line WL112 may be refreshed during the first target refresh TR1 and the word line WL110 may be refreshed during the second target refresh TR2, or vice versa.

[0064]Since the active operation of the memory bank BK0 was not perfo...

second embodiment

[0065]FIG. 5B is a diagram illustrating the operation of the memory device, according to the

[0066]FIG. 5B illustrates the case in which an active operation of the memory bank BK0 is performed between the refresh command REFC1 and the previous refresh command (not illustrated in FIG. 5B) (ACT_OP), and not between the refresh command REFC1 and the refresh command REFC2.

[0067]The refresh operation performed in the memory bank BK0 in response to the refresh command REFC1 may be performed in the same manner as described with reference to FIG. 5A.

[0068]Since the active operation of the memory bank BK0 was not performed between the refresh command REFC1 and the refresh command REFC2, only normal refresh operations NR1, NR2, and NR3 may be performed in the memory bank BK0 in response to the refresh command REFC2, and not any target refresh operations. When a target refresh operation is not to be performed, the memory device according to the second embodiment may perform a normal refresh ope...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A memory device may include: at least one memory bank; and a control circuit suitable for: refreshing the at least one memory bank through a first refresh operation in response to a refresh command; and refreshing the at least one memory bank through a second refresh operation when an active operation is performed between a current refresh command and a previous refresh command.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application claims priority of Korean Patent Application No. 10-2015-0161690, filed on Nov. 18, 2015, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Field[0003]The present application relates to a refresh control circuit and to a memory device including the refresh control circuit.[0004]2. Description of the Related Art[0005]A memory cell of a memory device includes a transistor serving as a switch and a capacitor for storing data in the form of an electrical charge (data). According to whether an electrical charge is stored in the memory cell or a voltage across the capacitor is high or low, the data may be categorized into high (logic 1) and low (logic 0).[0006]Since the data is stored in such a manner that electrical charges are accumulated, no power is consumed in principle. However, the initial charge stored in the capacitor may be degraded due to a leakage current caused by a PN junction of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/406
CPCG11C11/40618G11C11/40622G11C11/4094G11C11/40603G11C11/406
InventorJOO, NO-GUEN
OwnerSK HYNIX INC